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Semiconductor Device Manufacturing: Process > Making Device Or Circuit Responsive To Nonelectrical Signal Making Device Or Circuit Responsive To Nonelectrical SignalMaking Device Or Circuit Responsive To Nonelectrical Signal patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087463 - Pixel sensor having doped isolation structure sidewall A novel pixel sensor structure formed on a substrate of a first conductivity type includes a photosensitive device of a second conductivity type and a surface pinning layer of the first conductivity type. A trench isolation structure is formed adjacent to the photosensitive device pinning layer. The trench isolation structure ... 04/19/07 - 20070087462 - Method of forming a device package having edge interconnect pad A method of forming a device package having an edge interconnect pad includes forming an array of MEMS devices overlaying at least one conductive via that electrically connects to an underlying layer. The method continues with depositing, by way of a damascene process, a conductive material on a substrate that ... 04/12/07 - 20070082420 - Surface preparation for selective silicon fusion bonding An apparatus and method for a silicon-based Micro-Electro Mechanical System (MEMS) device, including a pair of silicon cover structures each having a substantially smooth and planar contact surface formed thereon; a silicon mechanism structure having a part thereof that is movably suspended relative to a relatively stationary frame portion thereof, ... 04/05/07 - 20070077674 - Process for producing semiconductor light-emitting device A process for producing a semiconductor light-emitting device is provided. The process includes providing a substrate including a substrate surface oriented along a substrate surface plane, forming a crystal seed layer on the substrate surface, forming a masking layer on the crystal seed layer, wherein the masking layer includes an ... 03/29/07 - 20070072326 - Photodiode for multiple wavelength operation A method of a fabricating a multiple wavelength adapted photodiode and resulting photodiode includes the steps of providing a substrate having a first semiconductor type surface region on at least a portion thereof, implanting and forming a second semiconductor type shallow surface layer into the surface region, and forming a ... 03/29/07 - 20070072325 - Self-aligned photodiode for cmos image sensor and method of making A method for forming a photodiode that is self-aligned to a transfer gate while being compatible with a metal silicide process is disclosed. The method comprises forming a gate stack of gate oxide, polysilicon, and a sacrificial/disposable cap insulator over the polysilicon. The insulator may be a combination of silicon ... 03/22/07 - 20070065965 - Manufacturing method and manufacturing apparatus for image display device After sealing layers are formed on peripheral edge parts of a front substrate and a rear substrate, the front substrate and the rear substrate are disposed to be opposed to each other. Current paths are formed in the sealing layers, and power supply is begun. An electric current, which reaches ... 03/22/07 - 20070065964 - Integrated passive devices The specification describes a new composite IPD substrate material with properties that are compatible with highly integrated thin film structures. The new composite substrate is a laminate of a wafer of single crystal silicon and a wafer of an insulator. The composite is produced at the wafer level by bonding ... 03/22/07 - 20070065963 - Method of manufacturing a micro-mechanical element A method of manufacturing a micromechanical element wherein the method comprises the steps of providing a layer of base material, applying at least one at least partly sacrificial layer of an etchable material, patterning the at least partly sacrificial layer, to define at least a portion of the shape of ... 03/08/07 - 20070054435 - Process for preparation of absorption layer of solar cell Provided is a process for preparing an absorption layer of a solar cell composed of a 1B-3A-Se compound, comprising applying a metal selenide nanoparticle as a precursor material to a base material and subjecting the applied nanoparticle to thermal processing, whereby the crystal size of the 1B-3A-Se compound can be ... 03/08/07 - 20070054434 - Methods of fabricating an image sensor Provided are methods of fabricating an image sensor. Embodiments of such methods can include forming a first gate insulation layer in a first region of a semiconductor substrate and a first gate electrode layer, to cover the first gate insulation layer and forming a second gate insulation layer within a ... 03/08/07 - 20070054433 - High temperature microelectromechanical (mem) devices and fabrication method A microelectromechanical (MEM) device per the present invention comprises a semiconductor wafer—typically an SOI wafer, a substrate, and a high temperature bond which bonds the wafer to the substrate to form a composite structure. Portions of the composite structure are patterned and etched to define stationary and movable MEM elements, ... 03/01/07 - 20070048888 - Electrical contact for a mems device and method of making A method for making a subsurface electrical contact on a micro-electrical-mechanical-systems (MEMS) device. The contact is formed by depositing a layer of polycrystalline silicon onto a surface within a cavity buried under a device silicon layer. The polycrystalline silicon layer is deposited in the cavity through holes etched through the ... 03/01/07 - 20070048887 - Wafer level hermetic bond using metal alloy Systems and methods for forming an encapsulated MEMS device include a hermetic seal which seals an insulating gas between two substrates, one of which supports the MEMS device. The hermetic seal may be formed by heating at least two metal layers, in order to melt at least one of the ... 02/22/07 - 20070042523 - Photoelectric current multiplier using molecular crystal and production method therefor A NTCDA single crystal is used as a photoelectric current multiplier layer, and Au thin films are formed as electrodes on the opposite surfaces of the multiplier layer by a vapor deposition method to form a sandwich type cell. When a voltage is applied to the NTCDA single crystal by ... 02/22/07 - 20070042522 - Method of fabricating resistive probe having self-aligned metal shield A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; ... 02/22/07 - 20070042521 - Microelectromechanical devices and fabrication methods There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. An embodiment further includes a buried polysilicon layer and a ... 02/15/07 - 20070037309 - Semiconductor device and method for manufacturing the same The TFT electric characteristic is ready to be influenced by the channel region in the neighborhood of an interface between a semiconductor and a gate insulating film. The present invention provides TFTs reduced in electric characteristic deviations and a method for manufacturing the same. The invention forms a region or ... 02/01/07 - 20070026558 - Magnetic tunnel junction sensor method Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ comprises first and second magnetic ... 01/25/07 - 20070020793 - Three-dimensional shaped solid dosimeter and method of use The invention relates to a solid plastic three-dimensional dosimeter which is useful in treatment planning, optimization of the radiation field, dose verification, dose validation, commissioning, and quality assurance of complex radiotherapeutic procedures. Dosimeters of the invention can be formed in any clinically relevant shape, and contain a reporter leuco dye ... 01/18/07 - 20070015302 - Semiconductor device and method of manufacturing thereof The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the ... 01/18/07 - 20070015301 - Multi spectral sensor A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that ... 01/11/07 - 20070010040 - Method for making a semiconductor device including a strained superlattice layer above a stress layer A method for making a semiconductor device may include forming a stress layer, and forming a strained superlattice layer above the stress layer and including a plurality of stacked groups of layers. Each group of layers of the strained superlattice layer may include a plurality of stacked base semiconductor monolayers ... 01/04/07 - 20070004075 - Photosensitive structure and method of fabricating the same A photosensitive structure and method of fabricating the same. A substrate with at least an insulator layer formed thereon is provided. The insulator layer comprises a plurality of photoreceiving regions, and a plurality of conductive patterns are formed thereon without covering the photoreceiving regions. A dielectric layer is formed on ... 01/04/07 - 20070004074 - Fabricating method of flat panel display device A fabricating method of a flat panel display device according to the present invention includes providing a thin film on a substrate; providing a soft mold having a groove and a projection on the thin film; contacting the projection of the soft mold and the thin film; and spreading a ... 12/28/06 - 20060292729 - Semiconductor device and manufacturing method thereof A semiconductor device includes a semiconductor substrate, an actuator provided above the semiconductor substrate to move upwardly, a first electrode layer which is moved by the actuator, and a cap portion provided above the first electrode layer and including a second electrode layer. ... 12/14/06 - 20060281213 - Actuator coupling system and a pipetting module comprising such a coupling system The present invention is directed a system for coupling a macroactuator to a movable element of a micromachined device. The system includes a micromachined device, a first body for holding a macroactuator, a macroactuator mechanically mounted on the first body, a second body having a bore for receiving the first ... 12/14/06 - 20060281212 - Stacked structure and production method thereof The invention relates to a method of producing a stacked structure. The inventive method comprises the following steps consisting in: a) using a first plate (1) which is, for example, made from silicon, and a second plate (5) which is also, for example, made from silicon, such that at least ... 12/07/06 - 20060275939 - Composition and method for temporarily fixing solids The present invention relates to a method of temporarily and firmly fixing two solids to each other and to a composition used in the method, which is a method of temporarily fixing, comprising temporarily fixing the two solids to each other with a liquid crystal compound or a composition comprising ... 11/30/06 - 20060270090 - Electrostatic discharge protection of thin-film resonators A method for fabricating an apparatus is disclosed. A substrate is provided and a seed layer is fabricated on the substrate. A thin-film resonator is fabricated on the substrate, the resonator including a portion of a bottom electrode layer and a portion of a top electrode layer. Then, at least ... 11/30/06 - 20060270089 - Sensor semiconductor device and method for fabricating the same A sensor semiconductor device and a method for fabricating the same are proposed. A plurality of metal bumps and a sensor chip are mounted on a substrate. A dielectric layer and a circuit layer are formed on the substrate, wherein the circuit layer is electrically connected to the metal bumps ... 11/30/06 - 20060270088 - Micromechanical component and method for production thereof An epitaxial layer having monocrystalline and polycrystalline silicon grown side by side is deposited on a substrate, a region being exposed as a vertically movable polycrystalline diaphragm, especially for a pressure sensor, by etching. The poly/mono transition regions on both sides of the diaphragm each nave an oblique profile such ... 11/23/06 - 20060263923 - Photodetectors and optically pumped emitters based on iii-nitride multiple-quantum-well structures The design and operation of a p-i-n device, operating in a sequential resonant tunneling condition for use as a photodetector and an optically pumped emitter, is disclosed. The device contains III-nitride multiple-quantum-well (MQW) layers grown between a III-nitride p-n junction. Transparent ohmic contacts are made on both p and n ... 11/23/06 - 20060263922 - Hybrid solar cells based on nanostructured semiconductors and organic materials A method for forming a photovoltaic cell which includes forming a nanostructured layer in a semiconductor material having a plurality of pores opening onto a surface, the plurality of pores having a depth greater than about 1 micron and a diameter between about 5 nanometers and about 1,200 nanometers, and ... 11/16/06 - 20060258037 - Method for producing a component having a semiconductor substrate and component A method for producing a component having a semiconductor substrate, in which porous semiconductor material is generated for the purpose of developing at least one thermally decoupled pattern. In the material that has been rendered porous, a recess or a plurality of recesses is/are etched to produce at least one ... 11/09/06 - 20060252173 - Method for manufacturing photoelectric package having control chip A manufacturing method for a photoelectric package structure having a control chip is proposed. The photoelectric package structure concentrates light emitted therefrom, prevents external light interference and can be applied for advertising signs and backlight modules. Using the present invention increases the defect-free ratio and production quality. Applying the present ... 11/09/06 - 20060252172 - Method of fabricating semiconductor probe with resistive tip Provided is a method of fabricating a semiconductor probe with a resistive tip. The method includes steps of forming a mask layer on a substrate doped with first impurities and forming first and second semiconductor electrode regions heavily doped with the second impurities on the substrate uncovered by the mask ... 10/19/06 - 20060234412 - Mems release methods A packaged MEMS device is fabricated by providing a first substrate, forming the MEMS device on the first substrate (the MEMS device including at least one element initially held immobile by a sacrificial material), optionally removing a portion of the sacrificial material without releasing the element, providing a second substrate, ... 10/05/06 - 20060223214 - Optoelectronic component for converting electromagnetic radiation into a intensity-dependent photocurrent Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent comprising a substrate formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and an optically active thin-film structure arranged upstream in the direction of light incidence and comprising in each case at least one layer made of ... 10/05/06 - 20060223213 - Image sensor having a charge storage region provided within an implant region A deep implanted region of a first conductivity type located below a transistor array of a pixel sensor cell and adjacent a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The deep implanted region reduces surface leakage and dark current and ... 10/05/06 - 20060223212 - Image sensor and method for manufacturing the same An image sensor is disclosed where individual photo diodes of the respective unit cells separated by an element isolating layer are physically integrated into a single large scale pixel formed widely on a semiconductor substrate so as to hold the pixels in common. A pixel separation pattern is additionally formed ... 09/28/06 - 20060216846 - Method of forming a microelectronic device A method of forming a microelectronic device (300) including the steps of forming a sensor component (100) and a capping component (200). The sensor component (100) includes a sensor structure (150, 152) and a conductive trace (160, 162) formed on a first SOI semiconductor wafer (110). The capping component (200) ... 09/07/06 - 20060199296 - Solid-state image sensing apparatus and method of manufacturing the same A solid-state image sensing apparatus having a three-dimensional structure whose manufacturing process can be simplified is provided. A solid-state image sensing apparatus formed by bonding a first member and a second member is provided. The first member has a first surface on the side of the bonding interface between the ... 09/07/06 - 20060199295 - Image sensor and methods of forming the same A method of forming an image sensor is provided. The method includes forming a protection insulating layer, a lower mold insulating layer and an upper mold insulating layer over a semiconductor substrate in which a plurality of photodiodes are spaced apart from one another. The method further includes forming a ... 08/31/06 - 20060194362 - Sensor including lead frame and method of forming sensor including lead frame A sensor includes a plurality of leads that have bottom surfaces extending in a first plane, a stage that extends in a second plane that tilts from the first plane, a sensor chip that is supported on the stage, a modified connection lead structure that supports the stage, and at ... 08/31/06 - 20060194361 - Mems packaging using a non-silicon substrate for encapsulation and interconnection A MEMS die is bonded to a cap to form a MEMS device. The cap is non-silicon and has an electrical via extending from one side of the cap to another side of the cap. In one embodiment, a plurality of caps is wafer bonded to a plurality of MEMS ... 08/24/06 - 20060189021 - Sample support prepared by semiconductor silicon process technique A sample support of the present invention is prepared such that a silicon substrate is used as a raw material, the thickness structure having a shape and a thickness of 10 μm or less is prepared using a semiconductor silicon process technique. The sample support of the present invention is ... 08/17/06 - 20060183262 - Thin film encapsulation of mems devices A method of manufacturing a miniature electromechanical system (MEMS) device includes the steps of forming a moving member on a first substrate such that a first sacrificial layer is disposed between the moving member and the substrate, encapsulating the moving member, including the first sacrificial layer, with a second sacrificial ... 08/17/06 - 20060183261 - Method of forming a biological sensor A method of forming a biological sensor on a predetermined area of a substrate. The method includes dispensing a plurality of layers on the predetermined area of the substrate. Each of the plurality of layers is formed of a substantially different fluid having a substantially different function. The dispensing of ... 08/10/06 - 20060177955 - Process for making a cmos image sensor An image sensor includes a semi-conducting substrate having a photo-sensitive region and doping for forming a path to a charge-to-voltage mechanism; a dielectric spanning the substrate; and a semi-conducting layer, which is less than approximately 1 micrometer, spanning the dielectric which contains electrodes and circuit elements that control flow of ... 07/20/06 - 20060160262 - Microelectromechanical devices and their fabrication A method of fabricating microelectromechanical (MEMs) systems and in particular for producing silicon carbide (SiC) MEMs devices with improved mechanical properties. The method comprises reacting a dry etch plasma with a layered microstructure; the layered microstructure having an etch mask, a sacrificial layer and a device layer arranged between the ... 07/13/06 - 20060154399 - Ultra-fast nucleic acid sequencing device and a method for making and using the same A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid ... 07/13/06 - 20060154398 - Method of manufacturing a structural health monitoring layer Methods of manufacturing a diagnostic layer containing an array of sensing elements. The sensing elements, associated wires, and any accompanying circuit elements, are incorporated various layers of a thin, flexible substrate. This substrate can then be affixed to a structure so that the array of sensing elements can analyze the ... 07/06/06 - 20060148117 - Process for producing a thin film with mems probe circuits A process for producing a thin film with MEMS probe circuits by using semiconductor process technology comprises steps of providing a flatted process substrate; forming a separable interface on the flatted process substrate; forming a probe circuit thin film with electric circuits, probes and circuit contacts on the separable interface; ... 07/06/06 - 20060148116 - Method of making a support for light emitting diodes which are interconnected in a three-dimensional environment The present invention relates to a method of making supports for light emitting diodes, wherein rigid substrates are used as supports for light emitting diodes, it being proposed, in particular, to render the substrates more fragile in order to make certain zones of a lower layer of the said substrate ... 06/29/06 - 20060141657 - Field emission device and manufacturing method thereof It is an object to provide techniques for forming a field emission device of a field emission display device with the use of an inexpensive large-sized substrate according to the process that enables improving productivity. A field emission device according to the present invention includes a cathode electrode formed on ... 06/29/06 - 20060141656 - Micromechanical sensors and methods of manufacturing same A micromechanical sensor and, in particular, a silicon microphone, includes a movable membrane and a counter element in which perforation openings are formed, opposite to the movable membrane via a cavity. The perforation openings are formed by slots, the width of which maximally corresponds to double the spacing defined by ... 06/29/06 - 20060141655 - Photoelectric conversion device, its manufacturing method, and image pickup device It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion ... 06/29/06 - 20060141654 - Method for fabricating a cmos image sensor A method for fabricating a CMOS image sensor in which an electron shower is performed for microlenses whose surfaces are charged to a positive potential, so as to neutralize the positive potential, thereby improving performance and yield of the image sensor. ... 06/29/06 - 20060141653 - Methods of manufacturing an image device In methods of manufacturing an image device, a first structure including a transparent lower portion and an opaque upper portion is formed on a substrate having a photodiode. An etch stop layer pattern positioned over the photodiode is formed on the first structure. A second structure having at least one ... 06/29/06 - 20060141652 - Mems device package and method for manufacturing the same A micro electromechanical system (MEMS) device package and a method of manufacturing the same are provided. The MEMS device package includes: a device substrate with a MEMS active device being formed on the top surface thereof; internal electrode pads, each of which is positioned on the opposite side of the ... 06/22/06 - 20060134820 - Process for forming microstructures The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first ... 06/22/06 - 20060134819 - Process for forming mems The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first ... 06/22/06 - 20060134818 - Method for fabricating micro-mechanical devices A method of fabricating micro-mechanical devices. A mesa is etched in a homogeneous wafer. The wafer is bonded to a patterned substrate with the mesa defining device elements suspended above the substrate. A portion of the wafer is removed until a desired device thickness is achieved. Discrete elements of the ... 06/15/06 - 20060128047 - Array substrate for liquid crystal display device and manufacturing method thereof A fabricating method of an array substrate for a liquid crystal display device includes forming a gate line on a substrate; forming an ohmic contact layer on the substrate; forming a data line and source and drain electrodes on the ohmic contact layer, the source electrode being connected to the ... 06/01/06 - 20060115918 - Method for manufacturing a magnetic field detecting element A method for manufacturing a magnetic field detecting element having a soft magnetic core formed on a substrate, first and second coils, each having coil lines, arranged above and below the core, the method including forming a seed film on the substrate, removing a portion of the seed film using ... 05/18/06 - 20060105489 - Method and apparatus providing cmos imager device pixel with transistor having lower threshold voltage than other imager device transistors A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted regions ... 05/18/06 - 20060105488 - Method of integrating optical devices and electronic devices on an integrated circuit A semiconductor structure has a waveguide a transistor on the same integrated circuit. One trench isolation technique is used for defining a transistor region and another is used for optimizing a lateral boundary of the waveguide. Both the waveguide and the transistor have trenches with liners that can be separately ... 05/04/06 - 20060094149 - Micro electrical mechanical system This disclosure relates to lids and methods for forming and using them. One embodiment of these lids enables MEMS protected by the lids to be smaller. Another of these lids enables testing of a group of conjoined, lidded MEMS. Also, processes for forming and using these lids are also disclosed. ... 05/04/06 - 20060094148 - Semiconductor acceleration sensor and process for manufacturing the same The present invention provides a semiconductor acceleration sensor wherein a semiconductor element is prevented from being damaged even when at least part of a weight is disposed in an internal space of a semiconductor sensor element and the mass of a weight is accordingly increased. An inner peripheral surface of ... 04/20/06 - 20060084195 - Methods for fabricating solid state image sensor devices having non-planar transistors Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ... 04/20/06 - 20060084194 - Photosensitive structure and method of fabricating the same A photosensitive structure and method of fabricating the same. A substrate with at least an insulator layer formed thereon is provided. The insulator layer comprises a plurality of photoreceiving regions, and a plurality of conductive patterns are formed thereon without covering the photoreceiving regions. A dielectric layer is formed on ... 04/06/06 - 20060073626 - Method for producing optical element, optical element, and optical element array A method for manufacturing an optical element comprises a step of press molding an optical element material 6 disposed between an upper press head (7) and its paired lower press head (8), wherein in the upper press head (7) and/or the lower press head (8) is formed a groove-like component ... 03/16/06 - 20060057755 - Micromechanical component and suitable method for its manufacture A micromechanical component having a silicon substrate; a cavity provided in the substrate; and a diaphragm, provided on the surface of the substrate, which closes the cavity; the diaphragm featuring a silicon-oxide layer having an opening that is formed by silicon-oxide wedges pointing to each other; and the diaphragm having ... 03/16/06 - 20060057754 - Systems and methods of actuating mems display elements Methods of writing display data to MEMS display elements are configured to minimize charge buildup and differential aging. The methods may include writing data with opposite polarities, and periodically releasing and/or actuating MEMS elements during the display updating process. Actuating MEMS elements with potential differences higher than those used during ... 01/19/06 - 20060014312 - Method for stripping sacrificial layer in mems assembly The present invention provides methods of manufacturing a MEMS assembly. In one embodiment, the method includes mounting a MEMS device, such as a MEMS mirror array, on an assembly substrate, where the MEMS device has a sacrificial layer over components formed therein. The method also includes coupling an assembly lid ... 01/12/06 - 20060008934 - Micromechanical actuator with multiple-plane comb electrodes and methods of making A micro-electro-mechanical component comprising a movable element with comb electrodes, and two stationary elements with comb electrodes aligned and stacked on each other but electrically insulated by a layer of insulation material. The movable element is supported by multiple torsional hinges and suspended over a cavity such that the element ... 01/12/06 - 20060008933 - Method for producing an integrated pin diode and corresponding circuit An explanation is given of, inter alia, a method for fabricating an integrated pin photodiode which contains a buried region (20) and a terminal region (32) leading to the buried region (20). This fabrication method enables the pin photodiode (14) to be integrated in a simple manner. Moreover, there is ... 12/29/05 - 20050287694 - Wafer matching methods for use in assembling micromirror array devices The invention provides a method for matching micromirror wafers and electrode wafers so as to form micromirror array devices while the production yield is maximized. Each micromirror wafer and/or electrode wafer may have one or more non-passing dies and a plurality of good dies. A set of matching schemes are ... 12/29/05 - 20050287693 - Method for the passivation of the mirror-faces surfaces of optical semi-conductor elements The aim of the invention is to simplify known passivation methods. According to said method, the semi-conductor elements are heated and cleaned in a high vacuum with a gaseous, reactive low-energy medium. A closed, insulating or slightly conductive, transparent protective layer is applied in-situ, said layer being inert in relation ... 12/08/05 - 20050272180 - Semiconductor photodetecting device and method for fabricating the same A semiconductor photodetecting device including a PIN photodiode formed on an SI—InP substrate; a buried optical waveguide portion formed on the SI—InP substrate and including the film thickness continuously increased toward the PIN photodiode and an InP clad layer covering the upper surface and the side surface of the InGaAsP ... 12/01/05 - 20050266597 - Charge sweep operation for reducing image lag A method and apparatus are disclosed for improving imager lag by using a charge sweep operation in which residual charge is swept out of the photodiode to reduce lag effects. The charge is swept out of the photodiode by activating the reset transistor a second time, substantially simultaneously with the ... 11/17/05 - 20050255624 - Positioning apparatus, exposure apparatus, and device manufacturing method A positioning apparatus is disclosed. The positioning apparatus comprises first and second bases, and two moving elements which are guided by the first and second bases to move on the first and second bases. A distance is ensured between the first and second bases. When the two moving elements move ... 11/10/05 - 20050250236 - Damascene process for use in fabricating semiconductor structures having micro/nano gaps In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial ... 11/10/05 - 20050250235 - Controlling electromechanical behavior of structures within a microelectromechanical systems device In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying ... 10/27/05 - 20050239231 - Method for making a microelectromechanical system using a flexure protection layer A microelectromechanical system is made by establishing a flexure protection layer over a portion of at least one flexure which is located on a substrate. The flexure protection layer is deposited such that a portion of the flexure is left exposed. Contact is established between a flexure-engaging element and the ... 10/27/05 - 20050239230 - Wheatstone bridge scheme for sensor A Wheatstone bridge circuit for a sensor has: first and second sensor elements which respond to a stimulus generated when the sensor is exposed to a sample to be measured, the first and second sensor elements comprising first and second elongated n type nano width regions formed in a suitable ... 10/20/05 - 20050233491 - Thin-film transistor sheet and manufacturing method thereof Disclosed is a manufacturing method to effectively form elements with accuracy including a gate electrode, a gate insulating layer, a semiconductor layer, source electrode and a drain electrode used for a thin-film transistor (TFT) sheet on a resin film. The manufacturing method of the TFT sheet, wherein two or more ... 10/13/05 - 20050227399 - Method of fabricating liquid crystal display device The method of fabricating a liquid crystal display device includes the steps of (a) fabricating a switching device on a substrate, (b) forming an interlayer insulating film on the substrate such that the switching device is covered with the interlayer insulating film, and (c) forming a transparent electrode on the ... 09/29/05 - 20050214966 - Method of fabricating probe for spm having fet channel structure utilizing self-aligned fabrication Provided is a method of fabricating a probe for a scanning probe microscope (SPM) having a field effect transistor (FET) channel structure utilizing a self-aligned fabrication. The provided method includes a first step of forming a first-shaped mask layer on a substrate and forming a source region and a drain ... 09/22/05 - 20050208695 - Electronic device and methods for fabricating an electronic device An electronic device and a method of fabricating the electronic device includes forming a first electrical contact, a dielectric layer and a second electrical contact wherein the dielectric layer is located between the first and the second electrical contacts, forming an electrically insulating layer over the dielectric layer and the ... 09/15/05 - 20050202584 - Pixel and imager device having high-k dielectrics in isolation structures An imager device that has an isolation structure such that pinned photodiode characteristics are maintained without increasing doping levels. The invention provides an isolation structure to maintain pinned photodiode characteristics without increasing doping levels around the photodiode. By creating a substrate region surrounding the charge-collection region of the photodiode, the ... 09/15/05 - 20050202583 - Antistatic film forming composition, and producing method for conductive film pattern, electron source and image display apparatus The invention provides a composition including a metal and a photosensitive component, wherein a film pattern formed by subjecting the composition to an exposure to light and a development has a water-repellent property and becomes an electrically resistant film upon baking. ... 09/15/05 - 20050202582 - Sensor arrangement with improved spatial and temporal resolution Sensor arrangement having sensor arrays arranged in crossover regions of row and column lines, each of the sensor arrays having a coupler and a sensor element, which influences current flow between a row and column line through the coupler, an accumulative current flow detector that detects accumulative current flow from ... 09/08/05 - 20050196890 - Ultra-shallow photodiode using indium The invention provides an imager having a p-n-p photodiode with an ultrashallow junction depth. A p+ junction layer of the photodiode is doped with indium to decrease transient enhanced diffusion effects, minimize fixed pattern noise and fill factor loss. ... 09/08/05 - 20050196889 - Methods of fabricating image sensors including local interconnections A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charges may be generated in the photodetector, the excess charges flow into the ... 08/25/05 - 20050186696 - Gas flowmeter and manufacturing method thereof A gas flowmeter capable of reducing a secular change comprises a silicon semiconductor substrate formed with a cavity and a heat element formed above the cavity of the semiconductor substrate by way of an insulating film. The heat element is a silicon (Si) semiconductor thin film impurity-doped at high concentration. ... 08/25/05 - 20050186695 - Method for manufacturing solid-state imaging device First, a first gate insulating film is formed in a region where a charge transfer portion is to be formed on a semiconductor substrate, and a protective film is formed on the first gate insulating film. A photoresist for transfer channel formation is formed on the protective film, and then ... 08/18/05 - 20050181528 - Solid state imaging device and method of fabricating the same A method for fabricating a solid state imaging device comprising photoelectric conversion sections and charge transfer sections having single-layered charge transfer electrodes for transferring charges generated in the photoelectric conversion sections, the method including formation of the charge transfer electrodes, wherein the formation of the charge transfer electrodes comprises the ... 08/11/05 - 20050176165 - Semiconductor device, semiconductor laser device, manufacturing method for semiconductor device, manufacturing method for semiconductor laser device, optical disk device and optical transmission system A semiconductor device has a main structure member laminated on a first conductivity-type semiconductor substrate. On the main structure, there is formed a first substructure member, the entirety of which, including lowermost layer, is second conductivity-type. On the main structure member, there is also formed a second substructure member spatially ... 08/11/05 - 20050176164 - Back-contact solar cells and methods for fabrication Methods for fabrication of emitter wrap through (EWT) back-contact solar cells and cells made by such methods. Certain methods provide for higher concentration of dopant in conductive vias compared to the average dopant concentration on front or rear surfaces, and provided increased efficiency. Certain methods provide for selective doping to ... 08/11/05 - 20050176163 - Method of forming a device by removing a conductive layer of a wafer A method of forming a MEMS device provides a wafer having a base, a first conductive layer, a second conductive layer, and an intermediate conductive layer. After it provides the wafer, the method removes at least a portion of the intermediate conductive layer to form a cavity between the first ... 08/04/05 - 20050170546 - Metod for making a micromechanical device by using a sacrificial substrate A method is disclosed for forming a micromechanical device. The method includes fully or partially forming one or more micromechanical structures multiple times on a first substrate. A second substrate is bonded onto the first substrate so as to cover the multiple areas each having one or more micromechanical structures, ... 08/04/05 - 20050170545 - Optimized transistor for imager device An imager device that has mitigated dark current leakage and punch-through protection. The transistor associated with the photoconversion device is formed with a single (i.e, one-sided) active area extension region on one side of the transistor gate opposite the photoconversion device, while other transistors can have normal symmetrical (i.e, two-sided) ... 08/04/05 - 20050170544 - Method for manufacturing mems structures A method for forming a free standing micro-structural member including providing a substrate; blanket depositing a first sacrificial resist layer over the substrate; exposing and developing the first sacrificial resist layer to form a first resist portion; subjecting the first resist portion to at least a hard bake process to ... 07/28/05 - 20050164422 - Color image display unit Light emitting devices formed in an array on a first substrate are transferred to an insulating material, to form a sheet-shaped device substrate. The sheet-shaped device substrate is cut along an array direction of the light emitting devices into long-sized line-shaped device substrates. The line-shaped device substrates are arrayed on ... 07/28/05 - 20050164421 - Pixel design to maximize photodiode capacitance and method of forming same A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated photodiodes is provided. The shared active area region isolates the two adjacent photodiodes and provides good substrate to surface pinned layer contact ... 07/21/05 - 20050158906 - Radiation detector In a method of producing a radiation detector, an active matrix board is formed to include gate lines and data lines arranged in a two-dimensional lattice shape, a plurality of high-speed switching elements provided to respective lattice points and connected to the gate lines and the data lines, picture element ... 07/21/05 - 20050158905 - Quartz-based nanoresonators and method of fabricating same A method for fabricating a quartz nanoresonator which can be integrated on a substrate, along with other electronics is disclosed. In this method a quartz substrate is bonded to a base substrate. The quartz substrate is metallized so that a bias voltage is applied to the resonator, thereby causing the ... 07/07/05 - 20050148109 - Partially transparent photovoltaic modules A photovoltaic cell comprising a supporting substrate, a front contact layer on the substrate, a layer or layers of semiconductor material and a back contact layer comprising a metal, the back contact having areas without metal thereby permitting the passage of light through the cell. ... 06/30/05 - 20050142684 - Method for fabricating a structure for a microelectromechanical system (mems) device The invention provides a microfabrication process which may be used to manufacture a MEMS device. In one embodiment, the process comprises depositing at least one first layer on a substrate. The process further comprises patterning said first layer to define at least a first portion of said microelectromechanical system device. ... 06/16/05 - 20050130337 - Sacrificial protective layer for image sensors and method of using A method for protecting an image sensor die is disclosed. The method comprises forming a plurality of image sensor die having micro-lenses onto a semiconductor wafer. Then, a protective layer is formed over the image sensor die. After the protective layer has been formed, and without any removal step of ... 06/02/05 - 20050118742 - Method for reducing the adhesive properties of mems and anti-adhesion-coated device A method provides coating of the surface of a microelectromechanical structure (MEMS) wafer by using an anti-stick layer. The anti-stick material is initially applied to a cap wafer, and in subsequent steps this seeded cap wafer is bonded to the MEMS wafer. The anti-stick material is evaporated and deposited at ... ### FreshPatents.com Support - Terms & Conditions |