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Semiconductor Device Manufacturing: Process > Making Device Or Circuit Emissive Of Nonelectrical Signal > Compound Semiconductor Compound SemiconductorCompound Semiconductor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/05/07 - 20070077673 - Method for manufacturing vertically structured light emitting diode There is provided a method for manufacturing a vertically structured LED capable of performing a chip separation process with ease. In the method, a light-emitting structure is formed on a growth substrate having a plurality of device regions and at least one device isolation region, wherein the light-emitting structure has ... 03/29/07 - 20070072324 - Substrate for growing a iii-v light emitting device A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the ... 02/22/07 - 20070042520 - Method of manufacturing vertical gan-based light emitting diode The present invention relates to a method of manufacturing a vertical GaN-based LED. The method includes forming an insulating pattern on a substrate to define LED regions having a predetermined size; sequentially stacking an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer on the substrate ... 02/15/07 - 20070037308 - Method for manufacturing gan semiconductor light-emitting element A method for manufacturing a GaN semiconductor light-emitting element is provided. The method for manufacturing a GaN semiconductor light-emitting element includes forming, by crystal growth, a first GaN compound semiconductor layer of a first conductivity type, the top face of which corresponds to the A plane, an active layer composed ... 02/08/07 - 20070031985 - Semiconductor laser device and method for fabricating the same A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an ... 11/30/06 - 20060270087 - Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd) A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and ... 11/30/06 - 20060270086 - Carrier confinement in light-emitting group iv semiconductor devices In one aspect, a first region that includes a first Group IV semiconductor that has a bandgap and is doped with a first dopant of a first electrical conductivity type is formed. A pattern is created. The pattern controls formation of local crystal modifications in the first Group IV semiconductor ... 11/02/06 - 20060246618 - Zn-base semiconductor light emitting device and method of fabricating the same A p-n junction interface 3 is formed between an n-type ZnTe1-x(0.5≦x≦1) layer 8 and a p-type ZnTe1-x(0≦x<0.5) layer 7, and the n-type ZnTeO layer 8 and/or p-type ZnTeO layer 7 are formed by thermal oxidation of the main surficial side of a p-type ZnTe wafer. This is successful in providing ... 10/19/06 - 20060234411 - Method of manufacturing nitride semiconductor light emitting diode The invention relates to a method of manufacturing a semiconductor light emitting diode. In the method, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are formed sequentially on a substrate. Then, a nickel oxide (NiOx) film is directly deposited on the p-type semiconductor layer ... 08/31/06 - 20060194360 - Method for manufacturing nitride-base semiconductor element and nitride-base semiconductor element A principal surface at one side of a support substrate has thereon an adjustment layer made of material having a higher thermal expansion coefficient than that of the support substrate. Then, a nitride-base semiconductor element layer and the support substrate on a growth substrate are joined via an adhesion layer. ... 08/24/06 - 20060189017 - Method for manufacturing nitride semiconductor wafer or nitride semiconductor device; nitride semiconductor wafer or nitride semiconductor device made by the same; and laser irradiating apparatus used for the same To remove the disparate substrate from nitride semiconductor layer grown over the disparate substrate, that is made of a material different from nitride semiconductor, by irradiating the disparate substrate with laser beam having a wavelength shorter than the band gap wavelength of the nitride semiconductor layer, while supplying an acidic ... 08/03/06 - 20060172449 - Method for manufacturing semiconductor laser diode The present invention provides a semiconductor laser diode and a method for forming a semiconductor laser diode. After forming a first mask on a ridge structure forming region of a second conductivity type clad layer, ridge structure having vertical side surfaces is formed on an upper portion of the second ... 07/27/06 - 20060166392 - Semiconductor light emitting device and manufacturing method thereof The present invention provides a semiconductor light emitting device where a spatial change in an In composition ratio is small within a plane of an active layer and device properties such as efficiency of light emission are excellent, and a manufacturing method thereof. An active layer having an InGaN quantum ... 07/06/06 - 20060148115 - Method of fabricating vertical structure compound semiconductor devices A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a metal support structure in place of the substrate. In one aspect, the step ... 06/22/06 - 20060134816 - Semiconductor laser device of iii-v group compound and fabrication method therefor A semiconductor laser device of a III-V group compound includes a substrate including a main surface having an inclination angle of less than 20° toward a [011] direction from a (100) plane and an inclined facet further inclined toward the [011] direction from the main surface, a light emitting stacked-layered ... 06/08/06 - 20060121638 - Method of producing nitride-based compound semiconductor light-emitting device A nitride-based compound semiconductor light-emitting device is produced by a method in which a semiconductor layered structure including a plurality of nitride-based compound semiconductor layers is formed on a substrate, the substrate is removed from the semiconductor layered structure by laser irradiation, an exposed surface of the semiconductor layered structure ... 06/01/06 - 20060115917 - Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices Methods are disclosed generally directed to design and synthesis of quantum dot nanoparticles having improved uniformity and size. In a preferred embodiment, a release layer is deposited on a semiconductor wafer. A heterostructure is grown on the release layer using epitaxial deposition techniques. The heterostructure has at least one layer ... 05/11/06 - 20060099730 - Method of fabricating vertical structure leds A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, ... 04/27/06 - 20060088950 - Fabrication method of multi-wavelength semiconductor laser device The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is ... 12/15/05 - 20050277218 - Group iii nitride compound semiconductor light-emitting device and method for producing the same In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 μm in height of a Group III nitride compound semiconductor projection part 150, which is made of Mg-doped p-type GaN having Mg doping concentration of 8×1019/cm3 and is formed through selective growth, ... 11/24/05 - 20050260781 - Method for manufacturing gallium nitride compound semiconductor An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the GaN layer grows ... 11/03/05 - 20050244997 - Bulk gan and aigan single crystals Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example ... 10/20/05 - 20050233490 - Structure capable of use for generation or detection of electromagnetic radiation, optical semiconductor device, and fabrication method of the structure A fabrication method of fabricating a structure capable of being used for generation or detection of electromagnetic radiation includes a forming step of forming a layer containing a compound semiconductor on a substrate at a substrate temperature below about 300° C., a first heating step of heating the substrate with ... 10/06/05 - 20050221527 - Light emitting diode and fabrication method thereof A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick ... 07/28/05 - 20050164419 - Group iii nitride crystal substrate, method of its manufacture, and group-iii nitride semiconductor device Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase ... 07/07/05 - 20050148108 - Manufacturing method of monocrystalline gallium nitride localized substrate An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask ... ### FreshPatents.com Support |