REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Making Device Or Circuit Emissive Of Nonelectrical Signal > Mesa Formation Mesa FormationMesa Formation patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/08/07 - 20070054431 - Nitride semiconductor laser element and method for manufacturing the same A substrate with a nitride semiconductor layer is cleaved to form resonator end faces, on which a coating film is formed so as to make a nitride semiconductor laser bar. This is divided into nitride semiconductor laser elements. Prior to forming the coating film on the resonator end face, the ... 01/04/07 - 20070004072 - Semiconductor laser element A method of producing a semiconductor laser element including, growing a lower cladding layer, an active layer, a first left upper cladding layer, a first etching stopper layer, a second left upper cladding layer, a second etching stopper layer, an upper cladding layer and a contact layer in the order ... 11/09/06 - 20060252171 - Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate ... 09/15/05 - 20050202581 - Method of manufacturing nitride based semiconductor light-emitting device Nitride based semiconductor light-emitting devices with a sufficiently low contact resistance p-type electrode and a method of manufacturing the same are disclosed. One such method of manufacturing nitride based semiconductor light-emitting devices includes steps of growing island-like AlGaN films 17 on p-type nitride based semiconductor layer 16, etching a surface ... 07/28/05 - 20050164418 - Nitride semiconductor, semiconductor device, and method of manufacturing the same Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride semiconductor capable of easily reducing surface defects in a step of forming a layer through lateral growth, and a method of manufacturing a ... 06/02/05 - 20050118741 - Method for fabricating semiconductor optical device Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type of semiconductor layers is selectively etched to ... ### FreshPatents.com Support |