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Semiconductor Device Manufacturing: Process > Making Device Or Circuit Emissive Of Nonelectrical Signal > Including Integrally Formed Optical Element (e.g., Reflective Layer, Luminescent Material, Contoured Surface, Etc.) > Optical Waveguide Structure Optical Waveguide StructureOptical Waveguide Structure patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/22/07 - 20070065959 - Method for manufacturing light-emitting diode A method for manufacturing a light-emitting diode is described, comprising the following steps. A substrate is provided. An illuminant epitaxial structure is formed on the substrate, wherein the illuminant epitaxial structure comprises a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer stacked on ... 11/16/06 - 20060258036 - Waveguide with reduced higher modes An apparatus in one example has an integrated optic component having at least a higher order mode energy and a lower order mode energy. The integrated optic component also has a portion with a predetermined configuration such that radiation divergence losses of the higher order mode energy being much larger ... 11/09/06 - 20060252170 - Optical wavelength switch having planar lightwave circuit structure An optical wavelength switch having a planar wave guide formed on a substrate is disclosed that comprises a wave-guide-type diffraction grating which includes an input/output wave guide having an under-clad layer on a sacrificial layer formed on the substrate, a core layer formed on the under-clad layer and an over-clad ... 08/31/06 - 20060194358 - Tunable semiconductor laser and method thereof A tunable semiconductor laser including a Fabry-Perot filter and an electrode array is disclosed. The propagation direction of the light beam in the cavity can be consecutively shifted applying electric field or current to the electrode and tuning can consecutively performed over the wide wavelength band by the consecutive shift ... 08/24/06 - 20060189016 - Method of fabricating semiconductor optical device Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor ... 08/17/06 - 20060183259 - Method of forming a wear-resistant dielectric layer A substrate is provided. The substrate includes a plurality of devices disposed in the substrate, a plurality of contact pads disposed on a surface of the substrate and electrically connected to the devices, and a surface dielectric layer positioned on the surface of the substrate. Thereafter, a surface treatment process ... 06/29/06 - 20060141649 - Method of reducing insertion loss in a transition region between a plurality of input or output waveguides to a free space coupler region A method for reducing insertion loss in a transition region between a plurality of input or output waveguides to a free space coupler region in a photonic integrated circuit (PIC) includes the steps of forming a passivation layer over the waveguides and region and forming the passivation overlayer such that ... 06/08/06 - 20060121637 - Mbe growth of p-type nitride semiconductor materials A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used as the nitrogen precursor for the MBE growth process. To grow p-type GaN, for example, by the method of the invention, gallium, ... 05/04/06 - 20060094146 - Emissive plastic optical fiber using phase separation and backlight unit for liquid crystal display using the same An emissive plastic optical fiber using phase separation and a backlight unit for a liquid crystal display using the emissive plastic optical fiber. The emissive plastic optical fiber is fabricated by inducing phase separation in a polymer which forms a core and/or a clad, which can be applied to the ... 05/04/06 - 20060094145 - Nitride-based semiconductor device and method of fabrication A light-emitting diode is built on a silicon substrate doped with a p-type impurity to possess sufficient conductivity to provide a current path. The p-type silicon substrate has epitaxially grown thereon two superposed buffer layers of aluminum nitride and n-type indium gallium nitride. Further grown epitaxially on the buffer layers ... 02/16/06 - 20060035399 - Process for making stacks of islands made of one semiconducting material encapsulated in another semiconducting material The invention relates to the product ion of a stacked structure of planes of islands of a first semiconducting material encapsulated in a second semiconducting material on a substrate, comprising alternate deposition of planes of islands of a first semiconducting material and encapsulation layers of a second semiconducting material, the ... 12/08/05 - 20050272179 - Three-dimensional lithographic fabrication technique Embodiments of a structure and embodiments of methods for fabricating structures provide three dimensional features defined by exposure to multiple wavelengths of light. In an embodiment, material is exposed to two different wavelengths of light. Embodiments of three dimensional structures may provide a variety of three-dimensional structural features and characteristics. ... 11/10/05 - 20050250232 - Method for forming a photonic band-gap structure and a device fabricated in accordance with such a method A device for application in the high frequency field and a method for forming a photonic band-gap structure are provided. The device being mountable on a primary substrate for forming the device. The device being formed by forming conformal coplanar waveguide metallizations on surface areas of two substrates, connecting the ... 10/06/05 - 20050221525 - Implementation of one or more optical waveguides in reduced optical material One or more first portions of a reduced optical material wafer are covered with a masking layer that leaves uncovered one or more second portions of the reduced optical material wafer. The reduced optical material wafer is exposed to an oxidizing atmosphere to reverse a reduction of the one or ... 09/29/05 - 20050214964 - Sige super lattice optical detectors An optical detector including a substrate; an island of detector material formed on the substrate, the island being a stack extending up from the substrate of alternating layers of first and second semiconductor materials, the island having a horizontally oriented top end, a vertically oriented first sidewall, and vertically oriented ... 09/22/05 - 20050208694 - Bonded thin-film structures for optical modulators and methods of manufacture The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In ... 08/11/05 - 20050176161 - Circuit board integrated optical coupling elements Techniques for circuit board processing are provided. In one aspect, a method of processing a circuit board having one or more optical waveguides associated therewith is provided. The method comprises the following steps. One or more etch stop layers in proximity to the one or more waveguides are provided, at ... 08/04/05 - 20050170542 - Semiconductor laser device, and method of manufacturing the same A semiconductor laser device comprises a laminate consisting of a semiconductor layer of first conductivity type, an active layer and a semiconductor layer of second conductivity type, which is different from the first conductivity type, that are stacked in order, with a waveguide region being formed to guide a light ... 07/07/05 - 20050148107 - Fabrication method of an epilayer structure ingaasp/inp ridge waveguide phase modulator with high phase modulation efficiency The present invention presents a method for fabricating an epilayer structure for achieving the optical confinement in the vertical direction of an InGaAsP/InP waveguide phase modulator, characterized by comprising the steps of: forming a first cladding layer of N-InP on an N+-InP substrate; forming a first waveguide layer of n-InGaAsP ... 06/02/05 - 20050118740 - Method of manufacturing a branch optical waveguide A method of manufacturing a branch optical waveguide is disclosed. According to the method, a resist pattern is formed by performing exposure using an exposure mask, and a core is formed by performing etching on a layer of a polymer resin material using the resist pattern as a mask. As ... ### FreshPatents.com Support |