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Semiconductor Device Manufacturing: Process > Making Device Or Circuit Emissive Of Nonelectrical Signal > Packaging (e.g., With Mounting, Encapsulating, Etc.) Or Treatment Of Packaged Semiconductor > Plural Emissive Devices Plural Emissive DevicesPlural Emissive Devices patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/01/07 - 20070026553 - Method of forming a semiconductor device A method of forming a semiconductor device from a semiconductor substrate (1) comprising circuitry (2) and terminal means (3) for establishing electrical connection to the circuitry; and a sheet (4) for forming a further layer of the device, the sheet comprising at least one groove (5). Adhesive is applied to ... 12/28/06 - 20060292722 - Flexible interconnect structures for electrical devices and light sources incorporating the same A flexible interconnect structure allows for rapid dissipation of heat generated from an electrical device that includes light-emitting elements, such as light-emitting diodes (“LEDs”) and/or laser diodes. The flexible interconnect structure comprises: (1) at least one flexible dielectric film on which circuit traces and, optionally, electrical circuit components are formed ... 12/28/06 - 20060292721 - Fabricating method for flat display device A fabricating method of a flat panel display device can reduce manufacturing costs of the flat panel display device. A fabricating method of a flat panel display device includes providing a conductive nanopowder thin film material having a first conductive nanopowder and a second conductive nanopowder, spreading the conductive nanopowder ... 11/09/06 - 20060252168 - Thin film transistor array panel for display and manufacturing method thereof A gate conductor including a gate line, a gate pad and a gate electrode is formed on a substrate. A gate insulating layer, a semiconductor layer, a doped amorphous silicon layer and a conductive layer are deposited in sequence, and then a photoresist film pattern is formed thereon. The photoresist ... 10/05/06 - 20060223207 - Microelectronic imaging units and methods of manufacturing microelectronic imaging units Methods for manufacturing microelectronic imaging units and microelectronic imaging units that are formed using such methods are disclosed herein. In one embodiment, a method includes providing a plurality of imaging dies on a microfeature workpiece. The individual imaging dies include an image sensor, an integrated circuit operably coupled to the ... 09/28/06 - 20060216842 - Laser facet passivation Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first ... 08/31/06 - 20060194357 - High-density germanium-on-insulator photodiode array A high-density Germanium (Ge)-on-Insulator (GOI) photodiode array and corresponding fabrication method are provided. The method includes: forming an array of pixel driver nMOST devices, each device having a gate connected to a row line in a first orientation, a first source/drain (S/D) region, and a second S/D region connected to ... 08/24/06 - 20060189014 - High-luminescence silicon electroluminescence device A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range ... 03/23/06 - 20060063290 - Method of fabricating metal-insulator-metal capacitor Provided is a method of fabricating a metal-insulator-metal (MIM) capacitor. This method includes forming a metal node on a substrate. A metal nitride node is formed on the substrate having the metal node by using a nitridation process. A dielectric is formed to surround a top surface and sidewalls of ... 03/02/06 - 20060046332 - Microelectronic imaging units and methods of manufacturing microelectronic imaging units Methods for manufacturing microelectronic imaging units and microelectronic imaging units that are formed using such methods are disclosed herein. In one embodiment, a method includes providing a plurality of imaging dies on a microfeature workpiece. The individual imaging dies include an image sensor, an integrated circuit operably coupled to the ... 11/17/05 - 20050255621 - Thin film transistor device and method of manufacturing the same A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. ... 11/17/05 - 20050255620 - Web fabrication of devices Apparatuses and methods for forming displays are claimed. One embodiment of the invention relates to forming an assembly using different sized blocks in either a flexible or rigid substrate. ... 11/17/05 - 20050255619 - Cmos-compatible light emitting aperiodic photonic structures A fabrication method and materials produce high quality aperiodic photonic structures. Light emission can be activated by thermal annealing post growth treatments when thin film layers of SiO2 and SiNx or Si-rich oxide are used. From these aperiodic structures, that can be obtained in different vertical and planar device geometries, ... 10/13/05 - 20050227394 - Method for forming die protecting layer A method for forming a die protecting layer is disclosed. The method comprises the following steps: providing a wafer with numerous dies on a first surface and a second surface, forming a transparent protecting layer on the second surface of the wafer. Clearly, the transparent protecting layer is directly formed ... 08/25/05 - 20050186694 - Method for fabricating a nitride semiconductor light-emitting device Provided is a method for fabricating a nitride semiconductor light-emitting device including a nitride semiconductor substrate having a groove and a ridge formed on the top surface thereof so as to extend in the shape of stripes and a nitride semiconductor growth layer consisting of a plurality of nitride semiconductor ... ### FreshPatents.com Support |