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Semiconductor Device Manufacturing: Process > Making Device Or Circuit Emissive Of Nonelectrical Signal Making Device Or Circuit Emissive Of Nonelectrical SignalMaking Device Or Circuit Emissive Of Nonelectrical Signal patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087460 - Method of fabricating nitride-based semiconductor laser diode A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks ... 04/19/07 - 20070087459 - Patchwork patterned devices and related methods Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device may include an interface including a first region and a second region. The first region having a dielectric function that varies spatially according to a first pattern, and the second region having ... 04/19/07 - 20070087458 - Semiconductor device and manufacturing method of the same An RTA method has a limitation on miniaturization. The RTA method needs a heating time of several seconds, and has a risk that impurities are diffused into a deep portion, since a semiconductor substrate is heated at a high temperature. Thus, the RTA method has a difficulty in responding miniaturization ... 04/12/07 - 20070082419 - Optical pickup unit and method of manufacturing the same An optical pickup unit comprising: a circuit connected to a light emitting device emitting light; and a counterpart circuit connected to the circuit, the circuit being soldered to the counterpart circuit. ... 04/12/07 - 20070082418 - Method for manufacturing a light emitting device and light emitting device made therefrom A method for manufacturing a light emitting device includes forming an epitaxial layer on a substrate, forming first and second electrodes that are electrically coupled to said epitaxial layer, forming a transparent layer on the epitaxial layer, forming particles of a mask material that are randomly scattered on a surface ... 04/05/07 - 20070077669 - Nitride-based semiconductor device and method of fabricating the same A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer ... 04/05/07 - 20070077668 - Light-emitting device and manufacturing method thereof Provides is a semiconductor light-emitting device. The semiconductor light-emitting device includes a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer, on a substrate. Portions of the substrate and the first conduction-type cladding layer are removed. According to the light-emitting device having the above-construction, damage to ... 03/29/07 - 20070072320 - Process for producing an epitalixal layer of galium nitride A method of manufacturing a low defect density GaN material comprising at least two step of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an epitaxial layer GaN on an epitaxially compentent layer under first growing conditions selected to induce island features ... 03/15/07 - 20070059853 - Method for manufacturing semiconductor device The present invention achieves the enhancement of a manufacturing yield factor and the reduction of manufacturing cost in a manufacturing method of a semiconductor device having a hetero junction bipolar transistor (HBT), a Schottky diode and a resistance element. The present invention is directed to the manufacturing method of a ... 03/15/07 - 20070059852 - Semiconductor light-emitting device and fabrication method thereof An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer ... 03/08/07 - 20070054428 - Light-emitting device and manufacturing method thereof A light emitting element having a superior light emitting characteristic is provided by forming a region partly including a phosphor (light emitting region) in manufacturing of a light emitting element having an organic compound layer using a high molecular weight material. A solution in which a high polymer having a ... 03/08/07 - 20070054427 - Terahertz radiating device based on semiconductor coupled quantum wells A method is presented for fabricating a semiconductor device operable to generate a THz spectral range radiation in response to an external field. According to this method, a heterostructure is formed from selected layers. The layers include at least first and second semiconductor layers made of materials having a certain ... 03/01/07 - 20070048885 - Thin film led A method of fabricating a light emitting diode (LED) includes providing an LED chip that emits light having a first wavelength where the LED chip includes a first electrical contact and a second electrical contact. The method further includes forming a tinted thin film layer over the LED chip where ... 02/22/07 - 20070042517 - Light-emitting element, production method thereof, and light-emitting apparatus The present invention provides an light-emitting element in which an organic compound layer containing a carbonate, for example Cs2CO3 and Li2CO3, as a dopant is in substantially electrical contact with a cathode by providing an organic compound layer having a dopant easy in handling so as to bring the organic ... 02/15/07 - 20070037306 - Method for manufacturing a semiconductor device A method for manufacturing a semiconductor device includes: forming a protrusion-patterned layer on a substrate, the protrusion-patterned layer including a plurality of separated protrusions, each of which includes a base portion formed on the substrate and a top end portion opposite to the base portion; laterally growing a base layer ... 02/15/07 - 20070037305 - Method of manufacturing semiconductor light- emitting device and semiconductor light-emitting device A semiconductor light-emitting device and method for manufacturing the semiconductor light-emitting device includes a mask layer etching process on first and second mask layers provided on a Group-III nitride-based compound semiconductor substrate, the mask layer with a higher etching rate being closer to the p-type semiconductor layer; a semiconductor layer ... 02/08/07 - 20070031983 - Thin plate manufacturing method and thin plate manufacturing apparatus In order to obtain a thin plate manufacturing method capable of extremely increasing manufacturing efficiency by enlarging the production scale and remarkably reducing the manufacturing cost per unit area and an apparatus for manufacturing this thin plate, a method and an apparatus performing introduction of a substrate into a main ... 02/01/07 - 20070026552 - Compound semiconductor device and its manufacture A compound semiconductor device has: a substrate; a GaN channel layer; an n-type AlqGal-qN (0<q (1) electron supply layer; an n-type GaN cap layer; a gate electrode disposed on the cap layer and forming a Schottky contact; recesses formed on both sides of the gate electrode on source and drain ... 02/01/07 - 20070026551 - Production method of gallium nitride-based compound semiconductor multilayer structure An object of the present invention is to provide a method for producing a gallium nitride-based compound semiconductor multilayer structure useful for the production of a gallium nitride-based compound semiconductor light-emitting device which can ensure that the operating voltage is reduced, the light emission output is good and the light ... 02/01/07 - 20070026550 - Method of manufacturing semiconductor light emitting apparatus and semiconductor light emitting apparatus A method of manufacturing a semiconductor light emitting apparatus according to the invention includes: the mask layer forming step of forming two mask layers in descending order of etching rates from a side near a p-type semiconductor layer; the mask layer etching step; the semiconductor layer etching step; the side ... 02/01/07 - 20070026549 - Array substrate, method of manufacturing the same and method of crystallizing silicon An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one block that are extended in ... 01/25/07 - 20070020791 - Image sensor with optical guard ring and fabrication method thereof An image sensor device and fabrication method thereof wherein a substrate having at least one shallow trench isolation structure therein is provided. At least one photosensor and at least one light emitting element, e.g., such as MOS or LED, are formed in the substrate. The photosensor and the light emitting ... 01/25/07 - 20070020790 - Light emitting device methods Light-emitting device methods are disclosed. ... 01/25/07 - 20070020789 - Light emitting devices and method for fabricating the same Light emitting devices and a method for fabricating the same have an advantage in that an etching film formed between a plurality of light emitting structures is removed to separate respective lateral surfaces of the light emitting structures from one another, and a substrate is removed to separate lower portions ... 01/18/07 - 20070015299 - Co-doping for fermi level control in semi-insulating group iii nitrides Semi-insulating Group III nitride layers and methods of fabricating semi-insulating Group III nitride layers include doping a Group III nitride layer with a shallow level p-type dopant and doping the Group III nitride layer with a deep level dopant, such as a deep level transition metal dopant. Such layers and/or ... 01/18/07 - 20070015298 - Optical element, optical module and method for manufacturing the same A method for manufacturing an optical element having a surface-emitting type semiconductor laser and a photodetector element that detects light emitted from the surface-emitting type semiconductor laser, the method including the steps of: (a) laminating, above a substrate, semiconductor layers for forming a first mirror, an active layer, a second ... 01/11/07 - 20070010036 - Method for manufacturing semiconductor device It is an object of the present invention to provide a method for manufacturing a semiconductor device that can suppress generation of a crack and peeling in a resin BM and deterioration of coverage of an upper layer of the resin BM, even if a black resin is used as ... 01/11/07 - 20070010035 - Light emitting diode and manufacturing method thereof A method for fabricating a light emitting diode (LED) is provided. First, a first type doped semiconductor layer, an emitting layer and a second type doped semiconductor layer are sequentially formed on an epitaxy substrate. Then, a first transparent conductive layer is formed on the second type doped semiconductor layer. ... 01/04/07 - 20070004064 - Electroluminescent device comprising porous silicon An electroluminescent device comprises a porous silicon region adjacent a bulk silicon region, together with a top electrical contact of transparent indium tin oxide and a bottom electrical contact of aluminium. The device includes a heavily doped region to provide an ohmic contact. The porous silicon region is fabricated by ... 12/28/06 - 20060292719 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures. ... 12/28/06 - 20060292718 - Method of producing nitride layer and method of fabricating vertical structure nitride semiconductor light emitting device The present invention provides methods for manufacturing a nitride layer and a vertical nitride semiconductor light emitting device. In manufacturing the nitride layer according to the invention, a sapphire substrate is prepared. A buffer layer made of a material having a melting point and a thermal conductivity higher than those ... 12/21/06 - 20060286695 - Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method A method for producing a semiconductor light emitting device is disclosed. The method comprises the step of growing a nitride type III-V group compound semiconductor layer that forms a light emitting device structure on a principal plane of a nitride type III-V group compound semiconductor substrate on which a plurality ... 12/21/06 - 20060286694 - Method for fabricating led A high etching selective layer and a light emitting structure are formed subsequently on a semiconductor substrate. Then, a p-type Ohmic contact layer and a metal substrate are formed subsequently on the light emitting structure. The semiconductor substrate and the high etching selective layer are removed. Next, an n-type electrode ... 12/21/06 - 20060286693 - Fabrication of three-dimensional photonic crystals in gallium arsenide-based material The present invention is an efficient method for the fabrication of three-dimensional structures in GaAs-based materials. The method is particularly suitable for the realization of 3D photonic crystals. The method relies on the observation that the oxidation rate of Ga1-xA1xAs in water-vapor atmosphere is a strong function of the aluminum ... 12/21/06 - 20060286692 - Method for manufacturing semiconductor element, apparatus for manufacturing semiconductor element and semiconductor element A method for manufacturing a semiconductor element includes an oxidation step of forming an oxidized layer in a semiconductor substrate by an oxidizing gas, wherein the oxidation step is conducted for the semiconductor substrate in a plurality of divided steps. ... 12/14/06 - 20060281205 - Method for manufacturing nitride-based semiconductor device In a method for manufacturing a high-quality GaN-based semiconductor layer on a substrate of different material, an AlN nucleation layer is grown on a substrate, a GaN buffer layer is grown on the AlN nucleation layer, and the substrate annealed. The AlN nucleation layer is formed to have a thickness ... 12/14/06 - 20060281204 - Manufacturing method of a liquid crystal display A manufacturing method of an LCD comprises forming an insulating substrate; forming a gate line extending in a horizontal direction and a data line insulatively crossing the gate line to define a pixel area on the insulating substrate; forming a TFT disposed at an intersection of the gate line and ... 12/14/06 - 20060281203 - Method of removing the growth substrate of a semiconductor light emitting device A semiconductor structure formed on a growth substrate and including a light emitting layer disposed between an n-type region and a p-type region is attached to a carrier by a connection that supports the semiconductor structure sufficiently to permit removal of the growth substrate. In some embodiments, the semiconductor structure ... 12/07/06 - 20060275938 - Display apparatus A configuration for decreasing the leakage electric current of a transistor for control for controlling an electric potential holding operation of a control electrode of a transistor for drive for flowing an electric current through a display device by adjusting the output electric potential of an electric potential source is ... 12/07/06 - 20060275937 - Method of fabricating light-emitting semiconductor device A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately ... 12/07/06 - 20060275936 - Method for production of a semiconductor device with auto-aligned metallisations This invention relates to a process for making a semiconductor device comprising the following steps: a doped region with a first type of conductivity is made on a first principal face of a semiconductor substrate and at least one window is made, a first metallisation area is deposited on the ... 11/30/06 - 20060270076 - Defect reduction of non-polar and semi-polar iii-nitrides with sidewall lateral epitaxial overgrowth (sleo) A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such ... 11/30/06 - 20060270075 - Method of manufacturing light emitting diodes A method of manufacturing a light emitting diode, wherein a laser lift-off (LLO) layer and an epi-layer are. formed on a nitride semiconductor substrate, and the nitride semiconductor substrate is then separated through a laser lift-off process, thereby improving the characteristics of the epi-layer and enabling to fabricate a high-grade ... 11/30/06 - 20060270074 - Light emitting device having nano structures for light extraction The present invention relates to a light emitting device having nano structures for light extraction and a method for manufacturing the same, nano structures comprising nano rods, nano agglomerations, nano recesses, nano patterns with nano line widths, nano through-holes or a combination thereof, formed on a light emitting surface of ... 11/23/06 - 20060263917 - Electroluminescent devices An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge carriers; and a light-emissive layer located between the charge carrier injecting layers and comprising a mixture of: a first component for accepting positive charge carriers ... 11/16/06 - 20060258028 - Color control by alteration of wavelength converting element A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or ... 11/16/06 - 20060258027 - Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitt A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the ... 11/09/06 - 20060252166 - Nitride semiconductor thin film and method for growing the same The present invention relates to a nitride semiconductor thin film and a method for growing the same. The present invention has an advantage in that a plurality of grooves are formed on a substrate by partially etching the substrate, and leg portions for preventing longitudinal growth of a nitride semiconductor ... 11/09/06 - 20060252165 - Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device comprises a transparent substrate, an electron injection layer having first and second regions on the transparent substrate, an active region formed on the first ... 11/09/06 - 20060252164 - Process for producing gan substrate A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO ... 11/02/06 - 20060246614 - Method for manufacturing gallium nitride-based semiconductor device The invention provides a method for manufacturing a gallium nitride-based semiconductor device having low-density crystalline defects and high-quality crystalinity. In the manufacturing method according to the invention, first, a gallium oxide substrate is prepared. Then, a surface of the gallium oxide substrate is modified into a nitride via physical or ... 11/02/06 - 20060246613 - Electroluminescent devices An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge carriers; and a light-emissive layer located between the charge carrier injecting layers and comprising a mixture of: a first component for accepting positive charge carriers ... 11/02/06 - 20060246612 - Light emitting devices with active layers that extend into opened pits Light emitting devices include an active region comprising a plurality of layers and a pit opening region on which the active region is disposed. The pit opening region is configured to expand a size of openings of a plurality of pits to a size sufficient for the plurality of layers ... 10/26/06 - 20060240585 - Package-integrated thin film led LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth ... 10/26/06 - 20060240584 - Method of producing nitride-based semiconductor device, and light-emitting device produced thereby A method of producing a nitride-based semiconductor device includes the steps of growing an InxAlyGa1-x-yN(0≦x, 0≦y, x+y<1) buffer layer (2; 12; 22; 32; 42) on a substrate (1; 11; 21; 31; 41) at a first substrate temperature, and growing a first conductivity type nitride-based semiconductor layer (4; 14; 24; 34; ... 10/26/06 - 20060240583 - Technique for manufacturing silicon structures A technique for manufacturing silicon structures includes etching a cavity into a first side of an epitaxial wafer. A thickness of an epitaxial layer is selected, based on a desired depth of the etched cavity and a desired membrane thickness. The first side of the epitaxial wafer is then bonded ... 10/19/06 - 20060234408 - Method for manufacturing vertical group iii-nitride light emitting device The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, ... 10/19/06 - 20060234407 - Method of fabricating vertical structure nitride semiconductor light emitting device A method of fabricating a vertical structure nitride semiconductor light emitting device having a cross-sectional shape of a polygon having five or more sides or a circle. A light emitting structure is formed on a sapphire substrate. A metal layer having a plurality of patterns is formed on the light ... 10/12/06 - 20060228820 - Multifunctional metallic bonding Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and ... 10/12/06 - 20060228819 - Method of making nitride-based compound semiconductor crystal and substrate A method of making a nitride-based compound semiconductor crystal has the step of growing a nitride-based compound semiconductor crystal with a predetermined thickness by using a nitride-based compound semiconductor substrate as a seed crystal. The nitride-based compound semiconductor substrate as the seed crystal is polished at both surfaces thereof. ... 10/05/06 - 20060223206 - Array substrate for liquid crystal display device and manufacturing method thereof An array substrate for a liquid crystal display device and manufacturing method thereof is disclosed in the present invention. The liquid crystal display having an array substrate includes a substrate, a gate line and a data line on the substrate, the gate line and the data line crossing each other ... 10/05/06 - 20060223205 - Fluidic heterogeneous microsystems assembly and packaging Self-assembly of components carried in a fluid is provided. A first component and a second component are obtained and self-assembled together. A third component is obtained and assembled with the first and second components, following the step of assembling the first and second components. The first, second and third components ... 09/14/06 - 20060205101 - Laser irradiation device, patterning method and method of fabricating organic light emitting display (oled) using the patterning method In a laser irradiation device, a patterning method and a method of fabricating an Organic Light Emitting Display (OLED) using the same. The laser irradiation device includes a light source, a mask, a projection lens, and a Fresnel lens formed at a predetermined portion of the mask to change an ... 09/07/06 - 20060199292 - Process for fabricating, and light emitting device resulting from, a homogenously mixed powder/pelletized compound The present invention comprises a process of mixing a luminous substance in powder form to a transferable grade molding compound in a pelletized or powder form, such as a clear epoxy, to derive a homogeneous mixture that can be pressed and sintered into solid pellets. The solid pellets are further ... 09/07/06 - 20060199291 - Method of making light emitting device with silicon-containing encapsulant A method of making a light emitting device is disclosed. The method includes providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable composition comprising a silicon-containing resin, a metal-containing catalyst, ... 09/07/06 - 20060199290 - Light emitting semiconductor bonding structure and method of manufacturing the same Disclosed is a light emitting semiconductor bonding structure and its manufacturing method. The light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are ... 08/31/06 - 20060194356 - Method for manufacturing multi-wavelength semiconductor laser device The present invention provides a method for forming a multi-wavelength semiconductor laser device. The method comprises sequentially forming an AlGaAs-based epitaxial layer for a first semiconductor laser diode and an etching stop layer composed of AlxGayIn(1-x-y)P (0≦x≦1, 0≦y≦1) on a substrate and sequentially growing an n-type GaAs flattening buffer layer ... 08/31/06 - 20060194355 - Laser diode bar provided with a parallel connected diode for bridging said laser siode bar in case of failure A laser diode component comprising a laser diode bar on which a specific operating voltage is impressed during operation and with which a bridging element is connected in parallel, which bridging element is in a current-blocking state when the specific operating voltage is impressed on the associated laser diode bar ... 08/10/06 - 20060177951 - Method of forming film pattern, device, method of manufacturing the same, electro-optical apparatus, and electronic apparatus A method of forming a film pattern by disposing a functional liquid on a substrate, includes: forming banks on the substrate; disposing the functional liquid in areas partitioned by the banks; and drying the functional liquid disposed on the substrate, wherein the forming of the banks including: forming a plurality ... 07/27/06 - 20060166389 - Method for producing solid-state imaging device, solid-state imaging device, and camera To provide a method for producing a solid-state imaging device enabling an improvement of a light sensitivity characteristic in a light receiving unit, a solid-state imaging device in which the light sensitivity characteristic is improved, and a camera provided with the solid-state imaging device. A shield film projected around the ... 07/27/06 - 20060166388 - Led package structure and mass production method of making the same An LED package structure includes a lower substrate, an upper substrate disposed on the lower substrate and having a though hole exposing a portion of the upper surface of the lower substrate; an individual LED unit disposed within the through hole in the upper substrate, a conductive pattern layer disposed ... 07/27/06 - 20060166387 - Optical transmission and/or receiving device The invention relates to an optical transmitting and/or receiving device, having: a semiconductor component with a first contact for connection with a reference voltage and a second contact for applying or leading away a high-frequency electrical signal; an electrically conducting carrier substrate with a first surface and a second surface, ... 07/27/06 - 20060166386 - Optical semiconductor device and its manufacturing method An optical semiconductor device (1) has a semiconductor substrate (2) made of InP, an active layer (7) which is formed in parallel with a top surface (2a) of the semiconductor substrate (2) above the semiconductor substrate (2), an n-type first cladding layer (6) made of InGaAsP which is formed under ... 07/20/06 - 20060160258 - Process for producing microelectromechanical components and a housed microelectromechanical component A process produces microelectromechanical components from a substrate that has a first side and a second side which is substantially opposite from the first side, and at least the first side has at least one microelectromechanical element. The process includes the step of providing at least one conductive passage into ... 07/20/06 - 20060160257 - White-light emitting devices and methods for manufacturing the same White-light emitting devices and methods for manufacturing the same. The white-light emitting device emits white light comprising a first color component with first wavelength, a second color component with a second wavelength, and a third color component with a third wavelength. The first wavelength is shorter than the second wavelength. ... 07/13/06 - 20060154392 - Method of making a vertical light emitting diode Methods are disclosed for forming a vertical semiconductor light emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device. ... 07/13/06 - 20060154391 - Light emitting diodes (leds) with improved light extraction by roughening Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device; and roughening the surface of the n-GaN layer to extract light from an interior of the LED device. ... 07/13/06 - 20060154390 - Systems and methods for producing light emitting diode array Systems and methods are disclosed for producing vertical LED array on a metal substrate; evaluating said array of LEDs for defects; destroying one or more defective LEDs; forming good LEDs only LED array suitable for wafer level package. ... 06/29/06 - 20060141646 - Organic electroluminescent device and method of manufacturing the same The invention provides an organic electroluminescent device and a method of manufacturing the same which conveniently reduce or suppress the transfer of ionic impurities into a light-emitting layer, and reduce or prevent the light-emitting property in the light-emitting layer from degrading, which promotes life extension. An organic electroluminescent device includes ... 06/29/06 - 20060141645 - Light emitting device and manufacturing method thereof The concentration of oxygen, which causes problems such as decreases in brightness and dark spots through degradation of electrode materials, is lowered in an organic light emitting element having a layer made from an organic compound between a cathode and an anode, and in a light emitting device structured using ... 06/29/06 - 20060141644 - Light emitting diode and fabricating method thereof A method for fabricating a light emitting diode (LED) is provided. Successively forming a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer on an epitaxy substrate; forming a bonding layer thereon; bonding a transferring substrate with the bonding layer; removing the epitaxy ... 06/29/06 - 20060141643 - Manufacturing method of pixel structure of thin film transistor liquid crystal display A method of fabricating a pixel structure of TFT LCD is provided. First, a gate pattern, pixel electrode pattern, gate isolating layer and semiconductor layer are formed over the substrate sequentially. Then, a patterning process is performed to remove the first metal layer over the pixel electrode pattern, wherein the ... 06/08/06 - 20060121635 - Lids for wafer-scale optoelectronic packages A method for forming a lid for a wafer-scale package includes (1) forming a cavity in a substrate, (2) forming an oxide layer over the cavity and over a bond area around the cavity on the substrate, (3) forming a reflective layer over the oxide layer, (4) forming a barrier ... 06/08/06 - 20060121634 - Liquid crystal display device and fabricating method thereof A liquid crystal display device and a fabricating method thereof for simplifying a process and improving an aperture ration are disclosed, including forming a first mask pattern group including a gate line, a gate electrode and a common line; forming a second mask pattern group including a semiconductor pattern and ... 06/01/06 - 20060115914 - Method of fabricating one-way transparent optical system A method of fabricating a one-way transparent optical system by which external light is effectively intercepted and internal light passes nearly without loss is provided. The method includes: forming a photoresist on an upper surface of a transparent substrate; heating and carbonizing the photoresist to form a black body layer; ... 06/01/06 - 20060115913 - Optical fiber preform, method of manufacturing optical fiber preform, and method of manufacturing optical fiber A porous layer is formed by depositing a silica glass particle around a core rod. The porous layer is dehydrated. The dehydrated porous layer is sintered under a decreased pressure until the dehydrated porous layer becomes a translucent glass layer containing a closed pore. The translucent glass layer is vitrified ... 06/01/06 - 20060115912 - Manufacturing method and luminance adjustment method of light emitting element array, exposure head, and electrophotographic apparatus As for a light emitting array and an exposure head provided with a plurality of light emitting elements capable of emitting light by the supplying power respectively, the electrical stress is given only to the light emitting element selected based on the luminance of each light emitting element, whereby the ... 05/25/06 - 20060110840 - Functional device and method for producing the same where Tg is a glass transition temperature of the organic material, ΔE1 is an activation energy for crystallization of the organic material measured while the electrode layer and the insulating layer are not stacked on the functional layer and ΔE2 is an activation energy for crystallization of the organic material ... 05/25/06 - 20060110839 - Micro-leds An array of light emitting devices, each device comprising a sloped wall mesa (24) of luminescent semiconductor material. Extending over the sloped wall mesas (24) is a metal contact (30). The array can be arranged as a parallel addressable system so that all devices (24) can be stimulated to emit ... 05/18/06 - 20060105482 - Array of light emitting devices to produce a white light source A device is provided with an array of a plurality of phosphor converted light emitting devices (LEDs) that produce broad spectrum light. The phosphor converted LEDs may produce light with different correlated color temperature (CCT) and are covered with an optical element that assists in mixing the light from the ... 05/18/06 - 20060105481 - Method of making light emitting device with silicon-containing encapsulant A method of making a light emitting device is disclosed. The method includes the steps of providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable composition consisting of a silicon-containing ... 05/18/06 - 20060105480 - Method of making light emitting device with silicon-containing encapsulant A method of making a light emitting device is disclosed. The method includes providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable composition consisting of a silicon-containing resin and a ... 05/18/06 - 20060105479 - Method of integrating optical devices and electronic devices on an integrated circuit A method for integrating an optical device and an electronic device on a semiconductor substrate comprises forming openings within an active semiconductor layer in a first region of the semiconductor substrate, wherein the first region corresponds to an electronic device portion and the second region corresponds to an optical device ... 05/18/06 - 20060105478 - Bonding an optical element to a light emitting device A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used ... 05/04/06 - 20060094141 - Method for manufacturing semiconductor laser device A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate layer of a third cladding layer and an ... 05/04/06 - 20060094140 - Manufacturing method for semiconductor light emitting device A manufacturing method for a semiconductor light emitting device is provided. The method includes preparing a first wafer in which at least one semiconductor layer including the emitter layer is formed; disposing a second wafer transparent to an emission wavelength of the emitter layer on the surface of the first ... 05/04/06 - 20060094139 - Method for making a semiconductor light emitting device A method for making a semiconductor light emitting device comprises the steps of: (a) forming a plurality of buttresses on a first supporting substrate such that the buttresses are separated by a plurality of intercommunicated spaces thereamong; (b) forming a base layer on top end portions of the buttresses in ... 05/04/06 - 20060094138 - Method for manufacturing high efficiency light-emitting diodes A method for manufacturing a high efficiency light-emitting diode (LED) is disclosed. In the method, a substrate is provided, in which an N-type buffer layer, an N-type cladding layer and an active layer are stacked on the substrate in sequence. A first P-type cladding layer is formed on the active ... 04/13/06 - 20060079014 - Method of manufacturing an led The present invention relates to a method of manufacturing an LED, comprising the steps of: first, forming a tape coppery metal strip; then, continuously pressing circuits on the tape coppery metal strip so as to form a carrier having circuit patterns of electric contacts on which the diode dies can ... 04/13/06 - 20060079013 - Point source light-emitting diode and manufacturing method thereof A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the ... 04/06/06 - 20060073623 - Methods of forming a microlens array over a substrate employing a cmp stop A method of forming a microlens structure is provided along with a CCD array structure employing a microlens array. An embodiment of the method comprises providing a substrate having a surface with photo-elements on the surface; depositing a transparent material overlying the surface of the substrate; depositing a CMP stop ... 04/06/06 - 20060073622 - Digital light valve semiconductor processing A system and method are provided for crystallizing a semiconductor film using a digital light valve. The method comprises: enabling pixel elements from an array of selectable pixel elements; in response to enabling the pixel elements, gating a light; sequentially exposing adjacent areas of a semiconductor film, such as Si, ... 03/30/06 - 20060068515 - Method for manufacturing a gan based led of a back hole structure This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or ... 03/23/06 - 20060063288 - High power allngan based multi-chip light emitting diode A light emitting diode chip having a substantially transparent substrate and having an aspect ratio, which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed. ... 03/23/06 - 20060063287 - Methods of assembly for a semiconductor light emitting device package Methods of assembly for a semiconductor light emitting device package may include positioning a submount on a mounting substrate with a solder material and a flux therebetween. The semiconductor light emitting device is positioned on a top side of the submount with a solder material and a flux therebetween to ... 03/16/06 - 20060057751 - Led package and method for producing the same A method for producing an LED package is provided, the LED package includes an LED die, which has a light-emitting surface, a non-light-emitting surface opposite to the light-emitting surface, a first electrode and a second electrode arranged on the non-light-emitting surface, a reverse-voltage protection member arranged on the non-light-emitting surface ... 03/16/06 - 20060057750 - Method and apparatus for manufacturing display Provided is a method of manufacturing a display which includes an insulating substrate and a structure formed on the insulating substrate and including a display element, including forming a patterned layer as a portion of the structure on the insulating substrate by vapor deposition in vacuum using a mask, and ... 03/16/06 - 20060057749 - Template type substrate and a method of preparing the same The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy growth wherein the layer A) ... 03/16/06 - 20060057748 - Control of contact resistance in quantium well intermixed devices A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum ... 03/02/06 - 20060046331 - Epitaxial substrate and semiconductor element In a Schottky diode 11, a gallium nitride support base 13 includes a first surface 13a and a second surface 13b opposite from the first surface and has a carrier concentration exceeding 1×1018 cm−3. A gallium nitride epitaxial layer 15 is disposed on the first surface 13a. An Ohmic electrode ... 03/02/06 - 20060046330 - Method for manufacturing a quantum-dot element A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of ... 02/09/06 - 20060030063 - Package structure for light emitting diode and method thereof A package structure of a light emitting diode includes a substrate structure, a connection layer, and at least one conductive passage. The substrate structure sequentially includes a conduction board, an insulation layer, and a conductive layer. The insulation layer is configured to electrically insulate the conduction board from the conductive ... 01/19/06 - 20060014310 - Resonant cavity iii-nitride light emitting devices fabricated by growth substrate removal A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the bottom surface of ... 01/12/06 - 20060008930 - Color filter, manufacturing method thereof, electrooptical device and electronic equipment A method for manufacturing a color filter having a picture element part surrounded by a partition wall and provided in the plural number on a substrate including a step of forming the partition wall that has a lyophobic quality on the substrate, step of forming a lyophilic layer in the ... 01/05/06 - 20060003476 - Method for the production of multilayer discs A Method for manufacturing an optical disc substrate comprises a first substrate with at least one structured surface, on which an anti-adhesive layer, preferably carbon, is deposited and first layer on top of said anti-adhesive layer. On a second substrate with a structured surface also a layer is deposited. Both ... 01/05/06 - 20060003475 - Semiconductor devices shared element(s) apparatus and method Two or more semiconductor devices (21 and 22) are formed on a substrate (20) and are each comprised of a plurality of printed components (23 and 24). At least one such printed component (25) is shared by both such semiconductor devices. ... 01/05/06 - 20060003474 - Roll-to-sheet manufacture of oled materials A method for making organic light-emitting diodes on a flexible substrate includes supplying a flexible substrate, forming a plurality of thin-film layers on the flexible substrate to produce an organic light-emitting diode, disposing the flexible substrate above a barrier base and disposing a barrier cover over the substrate and the ... 12/29/05 - 20050287689 - Method for manufacturing carbon fibers, method for manufacturing electron-emitting device using the same, method for manufacturing electronic device, method for manufacturing image display device, and information display reproduction apparatus using the s Carbon fibers having superior properties are very uniformly formed on a substrate. A method for manufacturing carbon fibers is provided which has the steps of disposing laminates formed of a first catalyst material and particles containing a second catalyst material on the substrate, causing a reaction between the first and ... 12/29/05 - 20050287688 - Water-barrier performance of an encapsulating film A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and depositing the material layer on the substrate at low temperature. The material layer can be used as an encapsulating ... 12/29/05 - 20050287687 - Method of fabricating algainp light-emitting diode and structure thereof A soft transparent adhesive layer is utilized to bond a transparent substrate material onto an AlGaInP light-emitting diode epitaxy on a GaAs substrate, and the GaAs substrate is next removed entirely. Then, a mesa etching process is performed to form a first top surface and a second top surface on ... 12/29/05 - 20050287686 - Method to improve water-barrier performance by changing film surface morphology A method and apparatus for depositing a material layer onto a substrate is described. The method includes placing the substrate in a process chamber, delivering a mixture of precursors for the material layer into the process chamber, delivering a hydrogen gas into the process chamber to improve water-barrier performance of ... 12/22/05 - 20050282303 - Liquid crystal display and method of manufacturing the same The present invention relates to a method for keeping contact resistance of a pad low. The present invention also discloses a structure of the pad and a method for manufacturing the same, for use in circuit boards and LCD displays. The pad terminal comprises a first metal layer and a ... 12/15/05 - 20050277216 - Method for making a semiconductor device A method of making a semiconductor device comprising a semiconductor element and a support member having a recess for housing the semiconductor element is disclosed. The method includes placing at least two lead electrode portions in the molding die; supplying a molding member to the molding die so that the ... 12/15/05 - 20050277215 - Optically pumped edge-emitting semiconductor laser A multilayer semiconductor laser includes a substrate on which is formed a semiconductor multilayer heterostructure divided into a plurality of electrically pumped regions and an elongated optically pumped region. The electrically pumped regions generate and deliver optical pump radiation laterally into the elongated optically pumped region. Output radiation is generated ... 12/15/05 - 20050277214 - Nitride single crystal and producing method thereof A method of producing a nitride single crystal includes the step of forming a material transport medium layer containing a compound of rare earth element on a surface of a nitride crystal, and the step of making a seed crystal in contact with the material transport medium layer to grow ... 12/08/05 - 20050272175 - Laser structuring for manufacture of thin film silicon solar cells A method of manufacturing thin-film, series connected silicon solar cells having a ZnO TCO layer, for example, using an ultraviolet scribing laser to scribe said ZnO TCO layer to form relatively smooth walls through said TCO layer. ... 12/01/05 - 20050266591 - Manufacturing process for ultra slim electrooptic display device unit A porous semiconductor layer, a monocrystalline Si layer, and a SiO2 layer are formed on a monocrystalline Si substrate. The SiO2 layer of the peripheral circuit area is removed, leaving the SiO2 layer in the display area. A poly Si layer is formed in the display area by epitaxial growth, ... 12/01/05 - 20050266590 - Electrophoretic display device A electrophoretic display device is provided, which includes: a thin film transistor array panel including a substrate, gate and data lines formed on the substrate and crossing each other, switching thin film transistors electrically connected to the gate and data lines, a photo sensor formed on the substrate, and pixel ... 11/24/05 - 20050260779 - Lithographic apparatus and a device manufacturing method A lithographic apparatus including an illumination system configured to provide a beam of radiation; a support configured to support a patterning device, the patterning configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project ... 11/17/05 - 20050255617 - Method for manufacturing display device In a method for manufacturing a display device having a light emitting element, a first base insulating film, a second base insulating film, a semiconductor layer, and a gate insulating film are formed in this order over a substrate. A gate electrode is formed over the gate insulating film to ... 11/17/05 - 20050255616 - Active matrix display devices, and their manufacture Physical barriers (210) are present between neighbouring pixels (200) on a circuit substrate (100) of an active-matrix display device, such as an electroluminescent display formed with LEDs (25) of organic semiconductor materials. The invention forms at least parts of the barriers (210) with metal or other electrically-conductive material (240) that ... 11/03/05 - 20050244994 - Wide tuneable laser sources A method of manufacturing a tuneable laser assembly including a substrate having formed thereon a plurality of tuneable lasers including Multi Quantum Well (MQW) active sections as well as distributed Bragg reflector (DBR) tuning sections. The lasers have respective emission wavelengths and tuning ranges such that the laser assembly can ... 11/03/05 - 20050244993 - Methods for producing a light emitting semiconductor body with a liminescence converter element In the second method, the semiconductor body (1) is provided with a layer (6) of bonding agent to which the luminescent material (5) is applied directly. ... 10/27/05 - 20050239226 - Method for manufacturing organic electroluminescence device and electronic apparatus A method for manufacturing an organic electroluminescence device, including: forming partitions sandwiching a film-forming area above a substrate; forming a boundary section in the proximity of said partitions; and ejecting droplets containing an electrode forming material into said film-forming area defined by said partitions and said boundary section. ... 10/27/05 - 20050239225 - Thin sheet production method and thin sheet production device In order to obtain a thin plate manufacturing method capable of extremely increasing manufacturing efficiency by enlarging the production scale and remarkably reducing the manufacturing cost per unit area and an apparatus for manufacturing this thin plate, a method and an apparatus performing introduction of a substrate into a main ... 10/20/05 - 20050233484 - Radiation-emitting semiconductor chip and method for the production thereof A radiation-emitting semiconductor chip (1) having a semiconductor layer sequence (3) comprising at least one active layer (2) that generates an electromagnetic radiation, and having a passivation layer (12) arranged on the radiation-emerging side of the semiconductor layer sequence (3), it being possible to set the degree of transmission of ... 10/20/05 - 20050233483 - Method of manufacturing semiconductor device, acid etching resistance material and copolymer (in the general formula (2), R5 is a hydrogen atom or methyl group). ... 10/13/05 - 20050227392 - Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a ... 10/13/05 - 20050227391 - Nanowire light emitting device and method of fabricating the same A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a ... 10/13/05 - 20050227390 - Method of fabricating an optoelectronic device having a bulk heterojunction A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first ... 10/13/05 - 20050227389 - Deformable organic devices A device is provided. The device includes a substrate, an inorganic layer disposed over the substrate, and an organic layer disposed on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer. The substrate is deformed such ... 10/13/05 - 20050227388 - Led illumination device with layered phosphor pattern A method of applying at least two phosphors to an LED, wherein a first phosphor material having a lower absorption, shorter luminescence decay time, and/or lower thermal quenching than a second phosphor material is positioned closer to the LED than the second phosphor. Such an arrangement provides a light emitting ... 10/13/05 - 20050227387 - Bonding a cover plate over encapsulated oleds A method of bonding a common cover plate over a plurality of OLED devices formed on a device substrate includes providing an unpatterned or a patterned layer of a pressure-sensitive adhesive (PSA) material over a surface of the cover plate; bonding the cover plate over the OLED devices; and singulating ... 10/13/05 - 20050227386 - Method of forming quantum dots for extended wavelength operation A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots covered by a spacer layer with strained areas ... 10/06/05 - 20050221516 - Liquid-liquid interfacial synthetic method for nanosemiconductor luminous material The present invention provides a process for producing a nanosemiconductor luminous material on a liquid-liquid interface, comprising the steps of: a) an oxide of a Group IIB metal and a carboxylic acid with 2-18 carbon atoms or an oleic acid reacting with each other in a solvent at 150-300° C. ... 09/29/05 - 20050214962 - Light active sheet and methods for making the same A method for making a sheet of light active material. A first substrate is provided having a transparent first conductive layer. A pattern of light active semiconductor elements are formed. The pattern of light active semiconductor elements may be formed using an electrostatic attraction and transferring process. The light active ... 09/22/05 - 20050208688 - Surface emitting semiconductor laser and process for producing the same A surface emitting semiconductor laser includes a substrate, a first semiconductor multilayer reflector formed on the substrate, an active region formed on the first semiconductor multilayer reflector, a second semiconductor multilayer reflector formed on the active region, a current confinement layer interposed between the first and second semiconductor multilayer reflectors ... 09/22/05 - 20050208687 - Method of manufacturing single-crystal gan substrate, and single-crystal gan substrate Manufacture at lower cost of off-axis GaN single-crystal freestanding substrates having a crystal orientation that is displaced from (0001) instead of (0001) exact. With an off-axis (111) GaAs wafer as a starting substrate, GaN is vapor-deposited onto the starting substrate, which grows GaN crystal that is inclined at the same ... 09/15/05 - 20050202579 - Solid-state image sensor for improving sensing quality and manufacturing method thereof A method of forming a solid-state image sensor is provided. The method includes the steps of forming a plurality of photosensor elements on a substrate; forming a plurality of color filters on the plurality of photosensors; forming a light blocking member between adjacent color filters; and forming a plurality of ... 09/08/05 - 20050196887 - Group iii-nitride based led having a transparent current spreading layer A light emitting device has an n-type layer and a p-type layer, which cooperate with one another to form a light generating region. At least one n+ layer is formed upon either the n-type layer or the p-type layer. At least one current spreading layer is formed upon the n+ ... 09/08/05 - 20050196886 - Process for the production of light-emitting diode light sources with a luminescence conversion element A plurality of light-emitting diode light sources of the same kind are produced simultaneously. Each light source includes a light-emitting diode chip and a luminescence conversion element, which converts the wavelength of at least part of an electromagnetic radiation emitted by the light-emitting diode chip. In a first process, a ... 09/01/05 - 20050191778 - Light-emitting semiconductor device having a quantum well active layer, and method of fabrication A light-emitting diode has a low-resistivity silicon substrate on which there are laminated a buffer layer, an n-type lower confining layer, an active layer of multiple quantum well configuration, and a p-type upper confining layer. The active layer is constituted of cyclic alternations of a barrier sublayer of InGaN, a ... 09/01/05 - 20050191777 - Method for producing light emitting diode with plated substrate The present invention discloses a method for producing a light emitting diode with a mirror and a plated substrate. The mirror and the plated substrate are formed after both electrodes are completed. Accordingly, the epitaxial structure and the mirror will not be damaged, and brightness and heat dissipation of the ... 09/01/05 - 20050191776 - Buffer layers for organic electroluminescent devices and methods of manufacture and use Organic electroluminescent device can be formed with multiple layers including an electrode, an emission layer, and a buffer layer. The emission layer includes a light emitting material. The buffer layer is disposed between and in electrical communication with the electrode and the emission layer and includes a triarylamine hole transport ... 09/01/05 - 20050191775 - Nitride-based semiconductor device and method of fabricating the same A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer ... 09/01/05 - 20050191774 - Photonic crystals with nanowire-based fabrication Fabrication of a photonic crystal is described. A patterned array of nanowires is formed, the nanowires extending outward from a surface, the nanowires comprising a catalytically grown nanowire material. Spaces between the nanowires are filled with a slab material, the patterned array of nanowires defining a patterned array of channels ... 09/01/05 - 20050191773 - Nitride iii-v compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x≦0.011 and x≧450 μm. Alternatively, if the maximum dimension of the ... 08/25/05 - 20050186693 - Surface-emission semiconductor laser device A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to form an Au alloy in the ... 08/18/05 - 20050181526 - Organic light-emitting device and method of fabricating the same An organic light-emitting device, comprising: a substrate; a first conductive layer formed over the substrate; at least one layer of a light-emissive organic material formed over the first conductive layer; a barrier layer formed over the at least one organic layer which acts to protect the at least one layer ... 08/04/05 - 20050170539 - Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a ... 08/04/05 - 20050170538 - Process for producing a semiconductor light-emitting device Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, ... 08/04/05 - 20050170537 - Manufacture of a semiconductor device A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers (11,13,15,17) with each pair of barrier layers being separated by a quantum well layer (12,14,16), comprises annealing each barrier layer (11,13,15,17) separately. Each barrier layer (11,13,15,17) is ... 07/21/05 - 20050158895 - Device transferring method A method of selectively transferring devices arrayed on a first substrate to a second substrate on which an adhesive resin layer is previously formed is provided. The method includes steps of selectively heating the adhesive resin layer on the second substrate by laser irradiation from the back surface side of ... 07/21/05 - 20050158894 - Method of fabricating image display unit Light emitting devices formed in an array on a first substrate are transferred to an insulating material, to form a sheet-shaped device substrate. The sheet-shaped device substrate is cut along an array direction of the light emitting devices into long-sized line-shaped device substrates. The line-shaped device substrates are arrayed on ... 07/21/05 - 20050158893 - Using protective cups to fabricate light emitting semiconductor packages A method of manufacturing a light emitting semiconductor package on a semiconductor wafer 252 which includes a plurality of light emitting devices 254 residing on or in a surface of the semiconductor wafer, the method comprising the steps of: forming at least one first hollow cap 256, each first hollow ... 07/21/05 - 20050158892 - Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of ... 07/21/05 - 20050158891 - Apparatus and processes for the mass production of photovoltaic modules An apparatus and processes for large scale inline manufacturing of CdTe photovoltaic modules in which all steps, including rapid substrate heating, deposition of CdS, deposition of CdTe, CdCl2 treatment, and ohmic contact formation, are performed within a single vacuum boundary at modest vacuum pressures. A p+ ohmic contact region is ... 07/14/05 - 20050153469 - Method for producing solid-state imaging device A method is provided for producing a solid-state imaging device in which a plurality of pixels are arranged two-dimensionally so as to form a photosensitive region, each of the pixels including a photodiode that photoelectrically converts incident light to store a signal charge and read-out elements for reading out the ... 07/07/05 - 20050148106 - Method of transferring a device, a method of producing a device holding substrate, and a device holding substrate The interface between a first substrate and light-emitting diodes formed on the first substrate is selectively irradiated with an energy beam and transmits the energy beam through the first substrate, thereby selectively releasing the light-emitting diodes. The light-emitting diodes are then transferred onto a device holding layer included on a ... 07/07/05 - 20050148105 - Process for producing light-emitting semiconductor device The invention provides a process for producing a light-emitting semiconductor device, which comprises: (1) forming a polycarbodiimide-containing layer on a light takeout side of a light-emitting semiconductor element; and (2) forming irregularities on the surface of the polycarbodiimide-containing layer. ... 06/30/05 - 20050142677 - Semiconductor light emitting device and its manufacture A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially on the semiconductor light emitting structure. A ... 06/30/05 - 20050142676 - Method for fabricating polysilicon liquid crystal display device A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the photoresist pattern and the first amorphous silicon layer; defining a channel region ... 06/16/05 - 20050130335 - Method of manufacturing master of optical information recording medium, method of manufacturing stamper of optical information recording medium, master and stamper of an optical information recording medium, and optical information recording medium A method of manufacturing a master 106 of an optical information recording medium for transcribing a predetermined pattern of pits and/or a groove on a stamper of the optical information recording medium, includes forming a resist 102 including an first inorganic material which changes its state with exposure on a ... ### FreshPatents.com Support |