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Semiconductor Device Manufacturing: Process > Manufacture Of Electrical Device Controlled Printhead Manufacture Of Electrical Device Controlled PrintheadManufacture Of Electrical Device Controlled Printhead patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/08/07 - 20070054426 - A method for preparing an optical active layer with 1~10 nm distributed silicon quantum dots The present invention relates to a method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots, it adopts high temperature processing and atmospheric-pressure chemical vapor deposition (APCVD), and directly deposit to form a silicon nitride substrate containing 1˜10 nm distributed quantum dots, said distribution profile of ... 02/22/07 - 20070042516 - Methods for fabrication of localized membranes on single crystal substrate surfaces A method is provided for fabricating thin membrane structures in localized surface regions of a single crystal substrate. In the method, ion implantation masks are patterned on the surface of the single crystal substrate with openings that define the localized surface regions. Foreign ions are implanted through the openings into ... 02/22/07 - 20070042515 - Printed fuse devices and methods for making the same Embodiments of the invention relate to efficient formation of improved fuses and fuse arrays, such as can be used in memory devices for example, by use of a printer that transfers material to a flexible substrate. In one embodiment, a fuse is printed using an inkjet printer on a flexible ... 02/01/07 - 20070026548 - Integrated circuit and method for manufacturing A semiconductor structure, fluid ejection device, and methods for manufacturing the same are provided, such that a contact to a substrate is formed from a conductive layer. ... 01/25/07 - 20070020788 - Fabrication method of high-brightness light emitting diode having reflective layer A method for fabricating a high brightness LED structure is disclosed herein, which comprises at least the following steps. First, a first layered structure is provided by sequentially forming a light generating structure, a non-alloy ohmic contact layer, and a first metallic layer from bottom to top on a side ... 12/28/06 - 20060292717 - Mounting and adhesive layer for semiconductor components An assembly and adhesive layer for semiconductor components is arranged between a silicon support (submount) and an electronic functional element for the formation of an electrically-conducting connection between the silicon support and the functional element. The assembly and adhesive layer are arranged on the support. The assembly and adhesive layer ... 12/14/06 - 20060281202 - Method for manufacturing laser devices A method for manufacturing a laser device includes fixing a laser chip to a holder via a metal having a low melting point by melting the metal at a temperature higher than the melting point, heating the holder to which the laser chip is fixed at a heat treatment temperature ... 09/07/06 - 20060199289 - Method for manufacturing a light-emitting diode A method for manufacturing a light-emitting diode (LED) is disclosed. In the method, a substrate is firstly provided, in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, a superlattice contact layer and a transparent conductive oxide layer are stacked on the substrate ... 08/24/06 - 20060189012 - Nitride compound semiconductor light emitting device and method for producing the same A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a <0001> direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure ... 08/10/06 - 20060177950 - Method of manufacturing optical interferance color display The method of manufacturing an optical interference color display is described. A first electrode structure is formed over a substrate first. At least one first area, second area and third area are defined on the first electrode structure. A first sacrificial layer is formed over the first electrode structure of ... 08/03/06 - 20060172446 - Semiconductor laser with a weakly coupled grating A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the ... 07/13/06 - 20060154389 - Light emitting diode with conducting metal substrate Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate. ... 05/04/06 - 20060094137 - Method of manufacturing ceramic led packages Methods of forming LED packages and light emitting devices are provided. LED packages and light emitting devices are preferably formed from ceramic layers, such as AlN, though layers of non-ceramic materials can also be used. The layers are formed to include vias, apertures, and metallization layers. The layers are then ... 04/06/06 - 20060073621 - Group iii-nitride based hemt device with insulating gan/algan buffer layer Various exemplary embodiments of the devices and methods for this invention provide for a semiconductor structure and a method of manufacturing a semiconductor structure that includes providing an aluminum nitride nucleation layer over a substrate, providing an undoped AlGaN buffer layer over the aluminum nitride nucleation layer, providing an undoped ... 03/02/06 - 20060046329 - Method for manufacturing a silicon sensor and a silicon sensor The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched openings at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element ... 03/02/06 - 20060046328 - Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2. ... 03/02/06 - 20060046327 - High heat dissipation led device and its manufacturing method A LED device with high heat dissipation capability has heat dissipating package formed by transparent epoxy and heat dissipating packing epoxy which is a mixture of heat dissipating particles and packing epoxy; during packing process the upper light emitting portion of the LED device is firstly packed with transparent packing ... 03/02/06 - 20060046326 - In-line process for making thin film electronic devices An embodiment of the present invention relates to an in-line process for making a thin film electronic device on a substrate. The process includes depositing a structurable layer onto a substrate and depositing photoresist material onto the structurable layer in a first pattern. The process also includes developing the photoresist ... 03/02/06 - 20060046325 - Group iii nitride semiconductor substrate and its manufacturing method The present invention provides a group III nitride semiconductor substrate with low defect density as well as small warp and a process for producing the same; for instance, the process according to the present invention comprises the following series of steps of: forming a metallic Ti film 63 on a ... 12/22/05 - 20050282302 - Method of manufacturing a light emitting device To reduce the number of layers of an EL layer so that it can be manufactured at a reduced cost. An electrode (a) (102) and an EL layer (103) are formed on an insulator (101), and the EL layer (103) is subjected to plasma processing. A carrier injection region (104) ... 12/15/05 - 20050277213 - Process for making light waveguide element A light waveguide element is made by forming only an upper clad layer (40) and a core layer (32) without etching an optical axis height-adjusting sections. By using plasma chemical vapor deposition (CVD) which is good at controlling the film thickness, it is possible to provide without difficulty a light ... 12/15/05 - 20050277212 - Semiconductor element, semiconductor device, and method for fabrication thereof A nitride semiconductor growth layer is laid on a substrate having an engraved region provided with a depressed portion. ... 12/15/05 - 20050277211 - Semiconductor optical devices and method for forming A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the ... 12/01/05 - 20050266589 - Formation method of electroconductive pattern, and production method of electron-emitting device, electron source, and image display apparatus using this In regard to an electroconductive pattern including a high resistivity region partially, by forming a pattern with a photosensitive resin, making the pattern absorb liquid containing a metal component, and baking this, an electroconductive film of metal oxide is formed, this electroconductive film is further covered by a gas shielding ... 11/24/05 - 20050260778 - Methods and systems for laser processing The described embodiments relate to slotted substrates. One exemplary method forms a feature into a substrate, at least in part, by directing a laser beam at the substrate. During at least a portion of said directing, the method supplies a conductive material proximate the substrate. ... 11/17/05 - 20050255615 - Semiconductor light emitting element and method for manufacturing the same A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer ... 11/17/05 - 20050255614 - Radiation-emitting and/or -receiving semiconductor component and method for the patterned application of a contact to a semiconductor body A radiation-emitting and/or -receiving semiconductor component comprising a semiconductor body (1), which has an active zone (2) provided for radiation generation or for radiation reception, a lateral main direction of extent and a main area, and also a protective layer (6) arranged on the main area and a contact (5) ... 11/10/05 - 20050250228 - Divided shadow mask for fabricating organic light emitting diode displays A divided shadow mask for use in fabricating an organic light emitting diode display including a first shadow mask section having a plurality of openings; and at least a second shadow mask section having a plurality of openings. ... 11/03/05 - 20050244992 - Method for manufacturing light emitting diode utilizing metal substrate and metal bonding technology and structure thereof A method for manufacturing the light emitting diode utilizing the metal substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a multi-layered semiconductor structure on the growing substrate, bonding a metal substrate to the multi-layered semiconductor structure, removing the growing substrate, ... 11/03/05 - 20050244991 - Activation of carbon nanotubes for field emission applications Substantially enhanced field emission properties are achieved by using a process of covering a non-adhesive material (for example, paper, foam sheet, or roller) over the surface of the CNTs, pressing the material using a certain force, and removing the material. ... 11/03/05 - 20050244990 - Method for forming pattern using printing method A method for forming a patterns includes applying ink onto an etching object layer; forming ink patterns on the etching object layer as a printing roll having convex patterns thereon rotates on the ink and removes portions of the ink which contact the convex portions of the printing roll, thereby ... 10/06/05 - 20050221515 - Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method A method for producing a semiconductor light emitting device is disclosed. The method comprises the step of growing a nitride type III-V group compound semiconductor layer that forms a light emitting device structure on a principal plane of a nitride type III-V group compound semiconductor substrate on which a plurality ... 09/29/05 - 20050214961 - Method for producing a vertically emitting laser The invention is directed to a vertically emitting laser and a method of manufacturing such a laser having a current aperture and a semiconductor relief. The semiconductor relief and the current aperture are defined in the same processing operation, thereby causing the semiconductor relief and the current aperture to be ... 09/22/05 - 20050208686 - Nitride semiconductor led improved in lighting efficiency and fabrication method thereof A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer ... 09/08/05 - 20050196885 - Slotted substrates and methods of forming The described embodiments relate to slotted substrates and methods of forming same. One exemplary method forms a first slot portion into a first surface of a substrate, the first slot portion defining a footprint at the first surface. The method also forms a second slot portion through the first slot ... 07/14/05 - 20050153468 - Optimal bank height for inkjet printing The height of the photo-resist layer “banks” which define pockets for inkjet printing or other patterned processes is optimized to provide a more uniform drying profile for substances which are to be deposited in those pockets and dried therein. Preferably, the height of the photo-resist layer is less than or ... 06/30/05 - 20050142675 - Method of manufacturing micro-electromechanical device having motion-transmitting structure A method of manufacturing a micro-electromechanical device is provided. The method comprises providing a substrate incorporating drive circuitry, and forming a drive member, a motion-transmitting member and a working member on the substrate as discrete components. The drive member is formed to have an electrical circuit in electrical contact with ... ### FreshPatents.com Support |