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Semiconductor Device Manufacturing: Process > Including Control Responsive To Sensed Condition > Optical Characteristic Sensed > Chemical Etching > Plasma Etching Plasma EtchingPlasma Etching patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.08/31/06 - 20060194351 - Methods and apparatus for configuring plasma cluster tools A method for configuring a specific plasma cluster tool having a plurality of modules. The method includes providing a set of module option definition files, the set of module option definition files containing generic configuration definitions for generic plasma cluster tools. The method further includes providing a set of tool-specific ... 08/24/06 - 20060189006 - Method and apparatus for detecting end point A mask layer and a to-be-processed layer are irradiated with light to measure interference light formed of reflected lights from the mask layer and reflected lights from the to-be-processed layer. Thereafter, an interference component brought by the mask layer is removed from the waveform of the measured interference light, thereby ... 05/11/06 - 20060099725 - Semiconductor device and process for producing the same A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 group to 4 or more and adjusting a ... 04/06/06 - 20060073619 - Semiconductor fabricating apparatus and method and apparatus for determining state of semiconductor fabricating process In a semiconductor device fabrication apparatus for performing an etching process for a semiconductor wafer having a plurality of films formed on a surface thereof and disposed in a chamber, by using plasma generated in the chamber, a change in light of multi-wavelength from the surface of the semiconductor wafer ... 02/23/06 - 20060040415 - Method and apparatus for nitride spacer etch process implementing in situ interferometry endpoint detection and non-interferometry endpoint monitoring An in situ dual-stage etch endpoint detection system is disclosed. The system includes an etch chamber, an interferometry endpoint monitoring system, and a non-IEP endpoint monitoring system. The etch chamber includes an electrostatic chuck (ESC), a top electrode, and a bottom electrode. The ESC is designed to support a wafer ... 12/15/05 - 20050277209 - Plasma leak monitoring method, plasma processing apparatus and plasma processing method In a plasma processing apparatus that forms plasma from a process gas by supplying the process gas into a processing container and applying high-frequency power to an electrode provided inside the processing container on which a workpiece is placed and executes specific plasma processing on the processing surface of the ... 09/08/05 - 20050196879 - Single-phase c-axis doped pgo ferroelectric thin films A method of planarizing a spin-on material layer is provided. A substrate having a plurality of openings thereon is provided. A spin-on material layer is formed on the substrate such that the openings are completely filled. A plasma etching process is carried out to remove a portion of the spin-on ... 07/14/05 - 20050153464 - Holographically defined surface mask etching method and etched opical structures The invention is directed to a method for etching a solid state material to create a surface relief pattern. A resist layer is formed on the surface of the solid state material. The photoresist layer is holographically patterned to form a patterned mask. The pattern is then transferred into the ... ### FreshPatents.com Support |