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Semiconductor Device Manufacturing: Process > Having Magnetic Or Ferroelectric Component Having Magnetic Or Ferroelectric ComponentHaving Magnetic Or Ferroelectric Component patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087454 - Method of fabricating a magnetic shift register A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/ or silicon layers. A trench is etched in the multi-layer stack structure. A selective etching process is used to corrugate the walls of trench. A seed ... 04/12/07 - 20070082416 - Semiconductor device A trench-structure semiconductor device is highly reliable and has an increased resistance to hydrofluoric acid cleaning or other cleaning of an insulation film between a gate electrode, which is embedded in a trench, and source electrode. In a trench-structure semiconductor device, a silicon nitride film is over the gate electrode ... 04/12/07 - 20070082415 - Method of manufacturing a semiconductor device having a dual gate structure A semiconductor device having a dual gate is formed on a substrate having a dielectric layer. A first metallic conductive layer is formed on the dielectric layer to a first thickness, and annealed to have a reduced etching rate. A second metallic conductive layer is formed on the first metallic ... 04/12/07 - 20070082414 - Perpendicular magnetic recording medium, method for production of the same, and magnetic recording apparatus A perpendicular magnetic recording medium having compatibility between low noises and high thermal stability is provided. In the present medium having at least an underlayer, a magnetic recording layer, a protective layer and a lubricant layer sequentially stacked on a nonmagnetic substrate, the underlayer is composed from at least one ... 04/12/07 - 20070082413 - Semiconductor memory device with a capacitor formed therein and a method for forming the same To integrate a capacitor device (40) into the region of a semiconductor memory device with a particularly small number of process steps, a lower electrode device (43) and an upper electrode device (44) of the capacitor device (40) are provided to be formed directly underneath or directly above the material ... 03/29/07 - 20070072312 - Interconnect connecting a diffusion metal layer and a power plane metal and fabricating method thereof A giant magnetoresistance (GMR) pad on the same level of GMR memory bit layer is used as an intermediate connection for plugs between the GMR pad and an underlying diffusion metal layer. A single large power metal plug is used to connect the GMR pad and the overlying power plane ... 03/29/07 - 20070072311 - Interconnect for a gmr stack layer and an underlying conducting layer Metal plugs located in a planar dielectric layer, under a GMR stack layer, are used to connect the nonmagnetic conducting layer of the GMR stack layer and a conducting layer under the planar dielectric layer. ... 03/29/07 - 20070072310 - Semiconductor device and method of manufacturing the same A semiconductor device comprising a semiconductor substrate and memory cells. Each memory cell comprises a switching transistor and a ferroelectric capacitor, both formed on the substrate. The ferroelectric capacitor includes a lower electrode, an upper electrode and a ferroelectric film held between the lower and upper electrodes. A first wire ... 03/22/07 - 20070065955 - Perpendicular magnetic recording medium, manufacturing method therefor, and magnetic read/write apparatus using the same A perpendicular magnetic recording medium includes: a substrate; at least one underlayer formed above the substrate; and a perpendicular magnetic recording layer formed above the at least one underlayer, an easy magnetization axis of the perpendicular magnetic recording layer being oriented perpendicular to the substrate, the perpendicular magnetic recording layer ... 03/15/07 - 20070059846 - Manufacturing method for semiconductor memory A semiconductor memory is fabricated in the following manner. A tungsten plug is formed by burying metal material such as W into a contact hole formed in an inter-layer insulation film. Then, the inter-layer insulation film is etched back by a predetermined thickness so that the upper end portion of ... 03/08/07 - 20070054421 - Production process of structured material Disclosed herein is a process for producing a structured material, comprising the steps of forming a film on a substrate, forming a plurality of holes in a first region of the film, forming a plurality of holes composed of a hole wall member different from a hole wall member of ... 03/08/07 - 20070054420 - Substrate structure and method for wideband power decoupling A substrate structure and method of wideband power decoupling comprising one or more embedded capacitors each comprising a ferroelectric material. ... 03/01/07 - 20070048880 - Capacitor, method of manufacturing the same, method of manufacturing ferroelectric memory device, method of manufacturing actuator, and method of manufacturing liquid jet head A method of manufacturing a capacitor, including: forming a lower electrode on a substrate; forming a dielectric film of a ferroelectric or a piezoelectric on the lower electrode; forming an upper electrode on the dielectric film; and forming a silicon oxide film so that at least the dielectric film is ... 02/15/07 - 20070037299 - Low power magnetoresistive random access memory elements Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite ... 02/15/07 - 20070037298 - Semiconductor device with ferroelectric capacitor and fabrication method thereof A semiconductor device fabrication method includes the steps of forming a conductive plug in an insulating film so as to be connected to an element on a semiconductor substrate; forming a titanium aluminum nitride (TiAlN) oxygen barrier film over the conductive plug; forming a titanium (Ti) seed film over the ... 02/08/07 - 20070031981 - Method for forming ferroelectric film and semiconductor device In a method for forming a ferroelectric film of insulating metal oxide on a surface of an electrode with a concave or a convex or in convex shape which is formed above a substrate, multiple types of source gases constituting a material gas and each containing an organometallic compound are ... 02/01/07 - 20070026538 - Deposition defined trackwidth for very narrow trackwidth cpp device In one embodiment, a method of forming a CPP sensor comprises providing a sensor having a hard mask disposed on a left side thereof and a right side with a portion of the sensor material removed therefrom, the hard mask having a vertical surface; forming a right dielectric layer including ... 02/01/07 - 20070026537 - Method for fabricating a magnetic head for perpendicular recording using a cmp lift-off and resistant layer A method using a CMP resistant hardmask in a process of fabricating a pole piece for a magnetic head is described. A set of layers used as the mask for milling the pole piece preferably includes a CMP resistant hardmask of silicon dioxide, a resist hardmask, an upper hardmask and ... 01/25/07 - 20070020775 - System and method for reducing shorting in memory cells An MRAM device includes an array of magnetic memory cells having an upper conductive layer and a lower conductive layer separated by a barrier layer. To reduce the likelihood of electrical shorting across the barrier layers of the memory cells, spacers can be formed around the upper conductive layer and, ... 01/25/07 - 20070020774 - Methods of utilizing magnetoresistive memory constructions The invention includes a method of forming a magnetoresistive memory device having a memory bit stack. The stack includes a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first and second magnetic layers. A first conductive line is proximate the stack and configured for utilization ... 01/18/07 - 20070015294 - Novel structure/method to fabricate a high-performance magnetic tunneling junction mram An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta capping layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent ... 01/18/07 - 20070015293 - Tmr device with surfactant layer on top of cofexby/cofez inner pinned layer A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned ... 01/11/07 - 20070010031 - Method of treating a substrate in manufacturing a magnetoresistive memory cell A method of treating a substrate in manufacturing a magnetoresistive memory cell includes performing a cleaning operation on the substrate using a mask layer as a protection layer for etching of a peripheral via. Further, an etch stop layer can used as a protection layer in a cleaning operation on ... 01/04/07 - 20070004049 - Semiconductor device having ferroelectric film as gate insulating film and manufacturing method thereof A semiconductor device includes a gate insulating film which at least includes a first insulating film formed on the main surface of a semiconductor substrate and a first ferroelectric film formed on the first insulating film, containing a compound of a preset metal element and a constituent element of the ... 12/28/06 - 20060292706 - Method of manufacturing substrate having periodically poled regions A current is observed while applying a gradually increasing voltage between electrodes formed front and rear surfaces of a substrate, and then poled regions are formed by applying a DC voltage, which has a voltage value at that time or another voltage value obtained by adding a predetermined value to ... 12/28/06 - 20060292705 - Method and process for fabricating read sensors for read-write heads in mass storage devices Method and process for fabricating a device structure for a read head of a mass storage device. A polish stop layer formed of a relatively hard material, such as diamond-like carbon, is positioned between a layer stack and a resist mask used to mask regions of the layer stack during ... 12/28/06 - 20060292704 - Magnetostactic wave device based on thin metal films, method for making same and application to devices for processing microwave signals The integrated magnetostatic wave device comprises a substrate (1), a conductive ferromagnetic thin film (2) of thickness lying in the range about 250 nm to 450 nm and preferably being equal to about 300 nm, said thin film (2) being deposited on said substrate (1), a first transducer antenna (10) ... 12/21/06 - 20060286688 - Integrated circuitry and method for manufacturing the same The integrated circuitry on a semiconductor substrate includes an integrated circuit arranged in a circuit area of the semiconductor substrate and a stress-sensitive structure on the semiconductor substrate for detecting a mechanical stress component in the semiconductor substrate, wherein the stress-sensitive structure is implemented to provide an output signal depending ... 12/21/06 - 20060286687 - Method for manufacturing semiconductor device A method for manufacturing a semiconductor device includes the steps of forming a circuit element on a semiconductor substrate, forming an insulation film covering the circuit element, forming a first electrode on the insulation film, forming a ferroelectric film on the first electrode, forming a second electrode on the ferroelectric ... 12/07/06 - 20060275930 - Method of manufacturing ferroelectric layer and method of manufacturing electronic instrument A method of manufacturing a ferroelectric layer, including: forming a first ferroelectric layer above a base by a vapor phase method; and forming a second ferroelectric layer above the first ferroelectric layer by a liquid phase method. ... 12/07/06 - 20060275929 - Method of fabricating periodic nano-structure arrays with different feature sizes A method of fabricating a two dimensional nano-structure array of features comprising the steps of providing a substrate (10); forming an intermediate layer on said substrate (20), said intermediate layer having at least two selectively located regions (21, 22) of different uniform thickness; placing at least one layer of elements ... 12/07/06 - 20060275928 - Semiconductor memory device and operating method for a semiconductor memory device A magnetoresistive semiconductor memory device is proposed, in which a magnetic field can be applied to memory cells by means of a magnetic field applying device such that a desired magnetization can be impressed on hard-magnetic layers of the memory cells acted on. ... 11/30/06 - 20060270065 - High performance integrated inductor Some embodiments of the present invention include providing high performance integrated inductors. ... 11/23/06 - 20060263911 - Etch mask and method of forming a magnetic random access memory structure A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask layer is formed over the covering layer followed by a second mask layer. The first mask layer and second ... 11/23/06 - 20060263910 - Data recording medium including ferroelectric layer and method of manufacturing the same A data recording medium including a ferroelectric layer and a method of manufacturing the same are provided. In the data recording medium, a barrier layer, a conductive layer, and a seed layer are sequentially stacked on a substrate. A data recording layer is formed on the seed layer and has ... 11/23/06 - 20060263909 - Methods of fabricating thin ferroelectric layers and capacitors having ferroelectric dielectric layers therein Methods of forming ferroelectric layers include forming a ferroelectric layer on a substrate and chemically-mechanically polishing a surface of the ferroelectric layer by rotating a polishing pad on the surface at a rotation speed in a range from about 5 rpm to about 25 rpm. This polishing step includes pressing ... 11/09/06 - 20060252161 - Ferroelectric polymer memory structure and method therefor A ferroelectric polymer memory device and its method of formation are disclosed. In accordance with one embodiment, lower electrode memory device portions are formed using a damascene patterning process and upper electrode memory device portions are formed using a subtractive patterning process. ... 11/02/06 - 20060246607 - Method for forming a storage cell capacitor compatible with high dielectric constant materials An integrated circuit structure includes a digit line and an electrode adapted to be part of a storage cell capacitor and includes a barrier layer interposed between a conductive plug and an oxidation resistant layer. An insulative layer protects sidewalls of the barrier layer during deposition and anneal of a ... 11/02/06 - 20060246606 - Self-aligned cross point resistor memory array A method of fabricating resistor memory array includes preparing a silicon substrate; depositing a bottom electrode, a sacrificial layer, and a hard mask layer on a substrate P+ layer; masking, patterning and etching to remove, in a first direction, a portion of the hard mask, the sacrificial material, the bottom ... 10/26/06 - 20060240577 - Ferroelectric capacitor and manufacturing method thereof The present invention provides a method for manufacturing a ferroelectric capacitor, comprising the steps of sequentially forming a first conductive film on a semiconductor substrate, a ferroelectric film on the first conductive film, and a second conductive film on the ferroelectric film respectively; etching the second conductive film to form ... 10/26/06 - 20060240576 - Process for fabricating an integrated circuit including a capacitor with a copper electrode The process and integrated circuit include at least one capacitor in which at least one of the electrodes is made of copper. The method includes forming a nitrogen-doped silicon carbide film between the copper electrode and the dielectric film of the capacitor. ... 10/19/06 - 20060234397 - Magnetic annealing sequences for patterned mram synthetic antiferromagnetic pinned layers A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and a ferromagnetic pinned layer over the pinning layer, the pinned layer having a first thickness. The fixed layer ... 10/19/06 - 20060234396 - Method for producing structure Disclosed is a method for producing a structure having: a stripping step in which an aluminum member including an aluminum substrate and an anodized layer present on the aluminum substrate, which layer contains micropores having an average pore diameter of 10 to 500 nm and a coefficient of variation in ... 10/19/06 - 20060234395 - Method for manufacturing perovskite type oxide layer, method for manufacturing ferroelectric memory and method for manufacturing surface acoustic wave element A method for manufacturing a perovskite type oxide layer includes the steps of: forming, above a substrate, a first oxide layer composed of perovskite type oxide; forming, above the first oxide layer, a second oxide layer composed of at least one of a perovskite type oxide layer crystallized at a ... 10/05/06 - 20060223199 - Semiconductor device and manufacturing method thereof By simultaneously forming via holes 35 for forming through electrodes 27 and 28 to be provided in second regions 13 and 14 and isolation trenches 30 for separating a first region 12 from the second regions 13 and 14, positioning of the via holes 35 and the isolation trenches 30 ... 10/05/06 - 20060223198 - Semiconductor device and fabricating method of the same An Al2O3 film with a thickness greater than that of a wiring is formed as a protective film, and then the Al2O3 film is polished by CMP until a conductive barrier film is exposed. Namely, CMP is applied to the Al2O3 film by utilizing the conductive barrier film as a ... 09/28/06 - 20060216837 - Method and apparatus for testing tunnel magnetoresistive effect element, manufacturing method of tunnel magnetoresistive effect element and tunnel magnetoresistive effect element A method for testing a TMR element includes a step of measuring a plurality of resistances of the TMR element by applying a plurality of voltages with different voltage values each other to the TMR element, respectively, a step of calculating a ratio of change in resistance from the measured ... 09/28/06 - 20060216836 - Method for manufacturing magnetic field detection devices and devices therefrom A method for manufacturing magnetic field detection devices is described, said method comprising the operations of manufacturing a magneto-resistive element (10; 20) comprising regions with metallic conduction (13; 23) and regions with semi-conductive conduction (11; 31). Said method comprises the following operations:—forming metallic nano-particles (37) to obtain said regions with ... 09/21/06 - 20060211156 - Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate. ... 09/21/06 - 20060211155 - Magnetic random access memory array with thin conduction electrical read and write lines An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. ... 09/21/06 - 20060211154 - Method of manufacturing patterned ferroelectric media A method of manufacturing patterned ferroelectric media, which includes forming an electrode on a substrate; forming features having a predetermined pattern on the electrode, the features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric ... 09/21/06 - 20060211153 - Photolithographic techniques for producing angled lines The present subject matter allows non-orthogonal lines to be formed at the same thickness as the orthogonal lines so as to promote compact designs, to be formed with even line edges, and to be formed efficiently. Various method embodiments relate to forming a magnetic random access memory (MRAM) array. Various ... 09/21/06 - 20060211152 - Synthetic control of metal oxide nanocrystal sizes and shapes A general, reproducible, and simple synthetic method that employs readily available chemicals permits control of the size, shape, and size distribution of metal oxide nanocrystals. The synthesis entails reacting a metal fatty acid salt, the corresponding fatty acid, and a hydrocarbon solvent, with the reaction product being pyrolyzed to the ... 09/14/06 - 20060205097 - Methods of manufacturing a crystal-oriented ceramic and of manufacturing a ceramic laminate A method for manufacturing a crystal-oriented ceramic comprising a sheet-making step, a crystallization-promoting layer-forming step and a calcining step is provided. At the sheet-making step, a green sheet 1 is made. At the crystallization-promoting layer-forming step, a crystallization-promoting layer 15 containing crystallization-promoting material particles 151 is formed so as to ... 09/14/06 - 20060205096 - Method for manufacturing nonlinear optical element An insulating film is formed on a first principal surface of the substrate. A periodic structure formation zone corresponding to a periodic structure formation region to be formed in the substrate, a plurality of polarization inversion zones corresponding to polarization inversion regions to be formed in a periodic arrangement in ... 09/07/06 - 20060199282 - Photo-imaged stress management layer for semiconductor devices A photo-imaged stress management layer for a semiconductor device is described. The stress management layer is located on an outer surface of a semiconductor device and may be patterned to address certain stress compensation requirements of the semiconductor device. The stress management layer may be manufactured onto the semiconductor device ... 08/31/06 - 20060194348 - Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same A three-dimensional (“3-D”) memory capacitor comprises a bottom electrode, a ferroelectric thin film, and a top electrode that conform to a 3-D surface of an insulator layer. The capacitance area is greater than the horizontal footprint area of the capacitor. Preferably, the footprint of the capacitor is less than 0.2 ... 08/24/06 - 20060189004 - Electronic and optoelectronic devices and methods for preparing same Disclosed are electronic, plasmonic and opto-electronic components that are prepared using patterned photodeposited nanoparticles on a substrate surface. Also disclosed are ferroelectric nanolithography methods for preparing components, circuits and devices. ... 08/24/06 - 20060189003 - Temperature-compensated ferroelectric capacitor device, and its fabrication A temperature-compensated capacitor device has ferroelectric properties and includes a ferroelectric capacitor using a ferroelectric material such as a metal oxide ferroelectric material, a negative-temperature-variable capacitor using a negative-temperature-coefficient-of-capacitance material such as a metal oxide paraelectric material, and an electrical series connection between the negative-temperature-variable capacitor and the ferroelectric capacitor. ... 08/17/06 - 20060183252 - Ferroelectric memory devices Forming a ferroelectric memory device can include forming an insulating layer on a substrate, forming a sacrificial layer on the first insulating layer so that the insulating layer is between the sacrificial layer and the substrate, and forming a contact hole extending through the sacrificial layer and the insulating layer. ... 08/17/06 - 20060183251 - Double density mram with planar processing The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques ... 08/17/06 - 20060183250 - Methods of fabricating ferroelectric capacitors utilizing a partial chemical mechanical polishing process The invention provides methods for fabricating ferroelectric capacitors and ferroelectric memory devices incorporating such capacitors. The methods according to the invention each include a partial chemical mechanical polishing process by which a planarized surface may be formed on a material layer formed between a buried contact plug and a ferroelectric ... 08/17/06 - 20060183249 - Thin films of ferroelectric materials and a method for preparing same Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in ... 08/10/06 - 20060177948 - Airtight terminal and method for producing the same, a piezoelectric vibrator and a method for producing the same, an oscillator, an electronic unit and a wave timepiece An airtight terminal that is small but provides good yield and a method for producing the same, an airtight terminal best suited for use in a piezoelectric vibrator and a method for producing the same, and a small piezoelectric vibrator with a small change in properties that uses these airtight ... 08/10/06 - 20060177947 - Magnetoresistive random-access memory device Disclosed is a new type of magnetoresistive random-access memory (MRAM) device using a magnetic semiconductor, which is capable of achieving high-integration and energy saving in a simplified structure without any MOS transistor, based on a rectification effect derived from a p-i-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure ... 08/03/06 - 20060172439 - Method of fabricating mram cells A method of fabricating an MRAM cell including providing a workpiece having at least one magnetic tunnel junction (MTJ) formed thereon, forming an insulating layer made of non-conductive, isolating material over the at least one MTJ, using a damascene process to form at least two adjacent first trenches in the ... 07/27/06 - 20060166379 - Method for manufacturing ferroelectric capacitor A method for manufacturing a ferroelectric capacitor having a lower electrode, a ferroelectric film, and an upper electrode stacked on one another comprises the steps of performing batch dry-etching thereto, processing and forming the upper electrode, the ferroelectric film, and lower electrode, performing a process for removing reactive products adhered ... 07/27/06 - 20060166378 - Method of producing semiconductor device A semiconductor device incorporating a capacitor structure that includes a ferroelectric thin film is obtained by forming, on a single crystalline substrate 10 having a surface suited for growing thereon a thin film layer of ferroelectric single crystal having a plane (111), a ferroelectric single crystalline thin film 12′ containing ... 07/20/06 - 20060160252 - Methods for fabricating ferroelectric memory devices with improved ferroelectric properties Pursuant to embodiments of the present invention, ferroelectric memory devices are provided which comprise a transistor that is provided on an active region in a semiconductor substrate, and a capacitor that has a bottom electrode, a capacitor-ferroelectric layer and a top electrode. These devices may further include at least one ... 07/20/06 - 20060160251 - Method in the fabrication of a memory device In a method for fabricating a memory device based on an electrically polarizable memory material in the form of an electret or ferroelectric material, the memory device comprises one or more layers with circuit structures provided exclusively or partially in a printing process. At least one protective interlayer is provided ... 07/13/06 - 20060154382 - Capacitor with high dielectric constant materials and method of making Stabilized capacitors and DRAM cells using high dielectric constant oxide dielectric materials such as Ta2O5 and BaxSr(1-x)TiO3, and methods of making such capacitors and DRAM cells are provided. One method includes providing a conductive oxide electrode, oxidizing at least the upper surface of the conductive oxide electrode, depositing a first ... 07/13/06 - 20060154381 - Method and structure for generating offset fields for use in mram devices A method for generating an offset field for a magnetic random access memory (MRAM) device includes forming a first pinned layer integrally with a wordline, and forming a second pinned layer integrally with a bitline. An MRAM cell is disposed between the wordline and the bitline, the MRAM cell including ... 07/06/06 - 20060148108 - Method for fabricating semiconductor device A conduction film 36 is formed in a larger design thickness value on a ferroelectric film 32 by MOCVD, and the entire surface of the conduction film 36 is anisotropically etched back, whereby the surface morphology of the conduction film 36 can be improved. The conduction film 36, whose surface ... 07/06/06 - 20060148107 - Method for fabricating semiconductor device A material of low viscosity is applied to a ferroelectric film 32 formed by MOCVD to form a buried layer 34. Then, anisotropic etching is made on the entire surface to remove the tops of convexities on the surface of the ferroelectric film 32, and the buried layer 34 remaining ... 07/06/06 - 20060148106 - On-chip signal transformer for ground noise isolation A mixed-signal chip having a signal transformer located between analog circuitry and digital circuitry. The signal transformer includes a primary winding electrically coupled to the analog circuitry and a secondary winding electrically coupled to the digital circuitry. The primary and secondary windings are magnetically coupled with one another via a ... 07/06/06 - 20060148105 - Ferromagnetic material A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The material is preferably sintered at a maximum temperature of 650° C. The result of this process is a semiconductor ... 06/29/06 - 20060141640 - Mtj elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements A method and system for providing a magnetic element are disclosed. The method and system include providing first and second pinned layers, a free layer, and first and second barrier layers between the first and second pinned layers, respectively, and the free layer. The first barrier layer is preferably crystalline ... 06/22/06 - 20060134809 - Fabrication of a ferromagnetic inductor core and capacitor electrode in a single photo mask step An integrated circuit capacitor having a bottom plate 50a, a dielectric layer 250′, and a ferromagnetic top plate 20a. Also, a method of manufacturing an integrated circuit on a semiconductor wafer. The method comprising forming a bottom plate of a capacitor 50a and a bottom portion of an induction coil ... 06/22/06 - 20060134808 - Ferroelectric capacitor stack etch cleaning methods Methods (100) are provided for fabricating a ferroelectric capacitor structure including methods (128) for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. The methods comprise etching (140, 200) portions of an upper electrode, etching (141, 201) ferroelectric material, and etching (142, 202) a lower electrode to define ... 06/15/06 - 20060128037 - Method of manufacturing a magnetic tunnel junction device A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two magnetic layers (3, 7) and a barrier layer (5) extending in between is formed. One of the magnetic layers is structured by means of etching, in which, during etching, a part of this layer ... 06/15/06 - 20060128036 - Fabrication of a ferromagnetic inductor core and capacitor electrode in a single photo mask step An integrated circuit capacitor having a bottom plate 50a, a dielectric layer 250′, and a ferromagnetic top plate 20a. Also, a method of manufacturing an integrated circuit on a semiconductor wafer. The method comprising forming a bottom plate of a capacitor 50a and a bottom portion of an induction coil ... 06/08/06 - 20060121630 - Methods of forming semiconductor constructions The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from ... 06/08/06 - 20060121629 - Methods of forming semiconductor constructions The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from ... 06/01/06 - 20060115909 - Method for manufacturing a resistively switching memory cell, manufactured memory cell, and memory device based thereon The invention relates to a method for manufacturing at least one resistively switching memory cell, in particular a phase change memory cell, said method comprising at least the steps of (a) structuring a hardmask applied above a layer and (b) etching back at least part of the structured hardmask, in ... 05/18/06 - 20060105474 - Method for manufacturing a magnetic memory device, and a magnetic memory device In bit line cladding structure formation, stability and margin of the process are secured and further shrinking is achieved, and the magnetic memory device is improved in speed, reliability and yield. Method for manufacturing a magnetic memory device, comprising the steps of: forming a word line; forming a magnetoresistance effect ... 05/11/06 - 20060099724 - Memory cell with buffered layer A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor ... 05/11/06 - 20060099723 - Compositions for removal of processing byproducts and method for using same A composition and methods for using the composition in removing processing byproducts is provided. The composition can be non-aqueous or semi-aqueous. The non-aqueous composition includes a non-aqueous solvent and one or more components including a fluoride compound and a pyridine compound. The semi-aqueous composition includes glacial acetic acid and one ... 05/11/06 - 20060099722 - Ferroelectric memory and its manufacturing method A method for manufacturing a ferroelectric memory includes: (a) forming first and second contact sections on a first dielectric layer formed above a base substrate; (b) forming a laminated body having a lower electrode, a ferroelectric layer and an upper electrode successively laminated; (c) forming a conductive hard mask above ... 05/04/06 - 20060094130 - Method for manufacturing a magnetic memory device, and a magnetic memory device In bit line cladding structure formation, stability and margin of the process are secured and further shrinking is achieved, and the magnetic memory device is improved in speed, reliability and yield. Method for manufacturing a magnetic memory device, comprising the steps of: forming a word line; forming a magnetoresistance effect ... 05/04/06 - 20060094129 - Methods of making a current-perpendicular-to-the-planes (cpp) type sensor by ion milling to the spacer layer using a mask without undercuts Methods for use in forming current-perpendicular-to-the-planes (CPP) type sensors, including CPP giant magnetoresistance (GMR) type and CPP magnetic tunnel junction (MTJ) type sensors are disclosed. In one particular example, a plurality of CPP type sensor layers are formed over a wafer and a mask without undercuts is formed over the ... 04/27/06 - 20060088947 - Magnetoresistive random access memory device structures and methods for fabricating the same Magnetoelectronic memory element structures and methods for making such structures using a barrier layer as a material removal stop layer are provided. The methods comprise forming a digit line disposed at least partially within a dielectric layer. The dielectric material layer overlies an interconnect stack. A void space is etched ... 04/13/06 - 20060079006 - Method for forming polarization reversal A method for forming a ferroelectric spontaneous polarization reversal in a desired region of a ferroelectric substrate 1 has a feature that said desired region 20 of a surface of said ferroelectric substrate is sprayed with micro-hard materials, made an impact by using a striking member that has micro tip ... 04/13/06 - 20060079005 - Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises converting a hydrophobic surface of a substrate into a hydrophilic surface, and forming a high-k gate dielectric layer on the hydrophilic surface. ... 04/06/06 - 20060073616 - Ferroelectric capacitor and its manufacturing method, and ferroelectric memory device A method for manufacturing a ferroelectric capacitor includes successively disposing a lower electrode, at least one intermediate electrode and an upper electrode over a base substrate, and providing ferroelectric films between the electrodes, respectively. In the step of forming the intermediate electrode, (a) a first metal film is formed by ... 04/06/06 - 20060073615 - Method of manufacturing capacitor in semiconductor device Provided is a method of manufacturing a capacitor in a semiconductor device, comprising the steps of: forming a first metal film of noble series for the bottom electrode; forming a ferroelectric film on the first metal film; conducting a first thermal process on the resultant structure where the ferroelectric film ... 04/06/06 - 20060073614 - Ferroelectric capacitor structure and manufacturing method thereof The present invention provides a ferroelectric capacitor structure comprising a ferroelectric capacitor which is constituted in such a manner that a lower electrode is formed, a ferroelectric film is formed on the lower electrode and an upper electrode is formed on the ferroelectric film, and which is formed in a ... 04/06/06 - 20060073613 - Ferroelectric memory cells and methods for fabricating ferroelectric memory cells and ferroelectric capacitors thereof Methods (100) are provided for fabricating a ferroelectric capacitor in a semiconductor device wafer, comprising forming (118) a lower electrode, depositing (126) PZT ferroelectric material on the lower electrode at a temperature below 450 degrees C., and forming (128) an upper electrode on the PZT. Methods are also provided for ... 03/30/06 - 20060068509 - Mfis ferroelectric memory array An MFIS memory array having a plurality of MFIS memory transistors with a word line connecting a plurality of MFIS memory transistor gates, wherein all MFIS memory transistors connected to a common word line have a common source, each transistor drain serves as a bit output, and all MFIS channels ... 03/30/06 - 20060068508 - Method for operating an mfis ferroelectric memory array An MFIS memory array having a plurality of MFIS memory transistors with a word line connecting a plurality of MFIS memory transistor gates, wherein all MFIS memory transistors connected to a common word line have a common source, each transistor drain serves as a bit output, and all MFIS channels ... 03/30/06 - 20060068507 - Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the same A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric ... 03/23/06 - 20060063279 - Method of fabricating memory and memory A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first ... 03/23/06 - 20060063278 - Methods of forming magnetic shielding for a thin-film memory element A monolithically formed ferromagnetic thin-film memory is disclosed that has local shielding on at least two sides of selected magnetic storage elements. The local shielding preferably extends along the back and side surfaces of a word line and/or digital lines of a conventional magnetic memory. In this configuration, the local ... 03/16/06 - 20060057745 - Novel oxidation structure/method to fabricate a high-performance magnetic tunneling junction mram An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) has a tunneling barrier layer of substantially uniform and homogeneous Al2O3 stoichiometry. The barrier layer is formed by depositing Al on a CoFe layer or a CoFe—NiFe bilayer having an oxygen surfactant layer formed thereon, then oxidizing the Al by ... 03/16/06 - 20060057744 - Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device includes: forming a circuit element on a semiconductor substrate; forming a first insulation film on top to cover the circuit element; forming a first electrode on top; forming a ferroelectric film on the first electrode; forming a second electrode on the ferroelectric film; ... 03/16/06 - 20060057743 - Spintronic device having a carbon nanotube array-based spacer layer and method of forming same This invention relates to spintronic devices—and electronic devices comprising them, such as spin valves, spin tunnel junctions and spin transistors—which utilize a layer comprised of an array of aligned carbon nanontubes. A spintronic device includes, a bottom electrode, a first ferromagnetic layer, a CNT array, a second ferromagnetic layer and ... 03/09/06 - 20060051882 - Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate ... 03/09/06 - 20060051881 - System and method for processing a wafer including stop-on-aluminum processing Magnetic tunnel junction (MTJ) devices can be fabricated by a stop-on-alumina process whereby the tunnel junction layer serves as the stop layer during plasma overetching of the upper magnetic layer. The resulting side walls of the MTJ device are non-vertical in the vicinity of the tunnel junction layer which serves ... 03/09/06 - 20060051880 - Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate ... 03/02/06 - 20060046320 - Liquid composition for forming ferroelectric thin film and process for producing ferroelectric thin film It is an object to provide a liquid composition for forming a thin film, with which a ferroelectric thin film having excellent characteristics can be prepared even by baking at a low temperature, and a process for producing a ferroelectric thin film using it. The above object is achieved by ... 03/02/06 - 20060046319 - Ferroelectric member element structure, method for manufacturing ferroelectric member element structure and method for manufacturing liquid jet head A method for manufacturing a ferroelectric member element structure having a ferroelectric member film, and lower and upper electrodes between which the ferroelectric member film is sandwiched, the method comprising the steps of: forming a buffer layer having pattern-shaped oriented growth on a monocrystal substrate; performing oriented growth of the ... 03/02/06 - 20060046318 - Ferroelectric memory and its manufacturing method A ferroelectric memory includes a base member, a first dielectric layer formed above the base member, a second dielectric layer formed above the first dielectric layer, a contact hole that penetrates the first and second dielectric layers, a plug formed in the contact hole, and a barrier layer formed above ... 03/02/06 - 20060046317 - Method for fabricating memory cells for a memory device Method for fabricating memory cells for a memory device The invention provides a method for fabricating a memory device having memory cells which are formed on a microstructured driving unit (100), in which method a shaping layer (104) is provided and is patterned in such a manner that vertical trench ... 03/02/06 - 20060046316 - Method of producing ferroelectric capacitor A method of producing a ferroelectric capacitor includes forming a first insulating layer on a semiconductor substrate with an MOSFET. After a first interlayer insulating layer is formed, a first conductive layer, a ferroelectric layer, and a second conductive layer are laminated on the first interlayer insulating layer to form ... 03/02/06 - 20060046315 - Method of producing ferroelectric capacitor A method of producing a ferroelectric capacitor includes the steps of preparing a semiconductor substrate; forming a first insulating layer on the semiconductor substrate; laminating sequentially a metal layer, a first conductive layer, a ferroelectric layer, and a second conductive layer on the first insulating layer to form a capacitor ... 03/02/06 - 20060046314 - Method for manufacturing ferroelectric memory A semiconductor substrate formed with a MOSFET is prepared, and a first interlayer insulating film is deposited on the semiconductor substrate. A ferroelectric capacitor is formed on the first interlayer insulating film. Next, a second interlayer insulating film is formed on a first structure provided with the semiconductor substrate, the ... 02/23/06 - 20060040414 - Methods of forming conductive materials The invention includes a method of forming a metal-comprising mass for a semiconductor construction. A semiconductor substrate is provided, and a metallo-organic precursor is provided proximate the substrate. The precursor is exposed to a reducing atmosphere to release metal from the precursor, and subsequently the released metal is deposited over ... 02/23/06 - 20060040413 - Pt/pgo etching process for feram applications A method of etching a noble metal top electrode on a ferroelectric layer while preserving the ferroelectric properties of the ferroelectric layer and removing etching residue includes preparing a substrate; depositing a barrier layer on the substrate; depositing a bottom electrode layer on the barrier layer; depositing a ferroelectric layer ... 02/16/06 - 20060035390 - Seed layer processes for mocvd of ferroelectric thin films on high-k gate oxides A method of forming a ferroelectric thin film on a high-k layer includes preparing a silicon substrate; forming a high-k layer on the substrate; depositing a seed layer of ferroelectric material at a relatively high temperature on the high-k layer; depositing a top layer of ferroelectric material on the seed ... 02/09/06 - 20060030058 - High speed low power magnetic devices based on current induced spin-momentum transfer The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction ... 02/09/06 - 20060030057 - Insulating film, capacitive element and semiconductor storage device including the insulating film, and fabrication methods thereof A capacitive element comprises: a lower electrode formed above a semiconductor substrate; a capacitive insulating film formed of a ferroelectric on the lower electrode so as to have a thickness of 100 nm or less; and an upper electrode formed on the capacitive insulating element. In any cross section of ... 01/19/06 - 20060014307 - Ferroelectric random access memory capacitor and method for manufacturing the same The method for manufacturing an FeRAM capacitor with a merged top electrode plate line (MTP) structure is employed to prevent a detrimental impact on the FeRAM and to secure a reliable FeRAM device. The method includes steps of: preparing an active matrix obtained by a predetermined process; forming a first ... 01/19/06 - 20060014306 - Magnetic random access memory array with thin conduction electrical read and write lines An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. ... 01/19/06 - 20060014305 - Mtj patterning using free layer wet etching and lift off techniques Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices, wherein the second magnetic layer or free layer of a magnetic stack may be patterned using a wet etch technique. A cap layer is formed over the free layer after the free layer is patterned. The cap layer is ... 01/12/06 - 20060008928 - Process for producing fine particles of bismuth titanate It is an object to provide fine particles of bismuth titanate having excellent dielectric characteristics, high crystallinity and a small particle diameter, and a process for their production. The object is accomplished by a process which comprises a step of obtaining a melt comprising, as represented by mol % based ... 01/05/06 - 20060003473 - Semiconductor device having ferroelectric material capacitor and method of making the same The present invention relates to the field of a semiconductor device having a ferroelectric material capacitor and method of making the same. The semiconductor device includes a capacitor having a triple-level oxygen barrier layer pattern formed by an oxygen barrier metal layer, a material layer formed of a conductive solid ... 01/05/06 - 20060003472 - Polymer-based ferroelectric memory Integrated memory circuits, key components in thousands of electronic and computer products, have been made using ferroelectric materials, which offer faster write cycles and lower power requirements than some other materials. However, the present inventors have recognized, for example, that conventional techniques for working with the polymers produce polymer layers ... 01/05/06 - 20060003471 - Self-aligned, low-resistance, efficient memory array The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor itself formed within a trench of an insulating layer. The present invention protects the MTJ from the voltages ... 01/05/06 - 20060003470 - Phase-change random access memory device and method for manufacturing the same Disclosed are a phase-change random access memory device and a method for manufacturing the same, capable of improving a driving speed of the phase-change random access memory by reducing a contact surface between a bottom electrode and a phase-change layer. The phase-change random access memory device includes a first insulation ... 01/05/06 - 20060003469 - Process for fabrication of a ferrocapacitor In a process for fabricating a ferrocapacitor comprising providing ferroelectric PZT elements over an Al2O3 layer, the Al2O3 layer is covered with a seed layer comprising layers of PZT and TiO2. Then a thicker layer of PZT is formed over the seed layer and crystallized. By this process, the crystallinity ... 12/22/05 - 20050282296 - Asymmetrical programming ferroelectric memory transistor A method of fabricating and programming a ferroelectric memory transistor for asymmetrical programming includes fabricating a ferroelectric memory transistor having a metal oxide layer overlaying a gate region; and programming the ferroelectric memory transistor so that a low threshold voltage is about equal to the intrinsic threshold voltage of the ... 12/22/05 - 20050282295 - Mtj stack with crystallization inhibiting layer A method of forming a magnetic stack and a structure for a magnetic stack of a resistive memory device. A crystallization inhibiting layer is formed over the free layer of a magnetic stack, improving thermal stability. The crystallization inhibiting layer comprises an amorphous material having a higher crystallization temperature than ... 12/15/05 - 20050277208 - Method for manufacturing semiconductor device Disclosed is a method for manufacturing a semiconductor device, comprising forming an insulating film above a semiconductor substrate having an element formed thereon, forming an anti-reflection layer that is impermeable to hydrogen on the insulating film, the anti-reflection layer comprising a layer formed of at least one material selected from ... 12/15/05 - 20050277207 - Mask schemes for patterning magnetic tunnel junctions Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices that avoid shorting magnetic memory cells to upper levels of conductive lines during etching processes. One method involves using a hard mask having two material layers to pattern the lower magnetic material layers of an MTJ. The first material ... 12/15/05 - 20050277206 - Structure and method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is ... 12/08/05 - 20050272171 - Method for manufacturing ferroelectric capacitor, method for manufacturing ferroelectric memory, ferroelectric capacitor and ferroelectric memory A method for manufacturing a ferroelectric capacitor in accordance with the present invention includes: (a) a step of forming a ferroelectric laminated body by successively laminating a lower electrode layer, a ferroelectric layer and an upper electrode layer over a base substrate; (b) a step of patterning at least the ... 12/08/05 - 20050272170 - Method of manufacturing ferroelectric film capacitor A method of manufacturing a ferroelectric film capacitor includes forming a platinum film used as an electrode material over a whole surface of a silicon substrate, batch-etching the platinum film to form opposite electrodes that serve as a pair of capacitor electrodes, and embedding a ferroelectric film corresponding to a ... 11/24/05 - 20050260774 - Method of incorporating magnetic materials in a semiconductor manufacturing process A method for incorporating magnetic materials in a semiconductor manufacturing process includes manufacturing a semiconductor device including interlayers and dielectric layers, depositing a magnetic layer above a semiconductor device and forming metallized contacts for connecting interlayers of the semiconductor device. With the method of the present invention, the deposition of ... 11/24/05 - 20050260773 - Mram cell structure and method of fabrication An MRAM structure is disclosed where the distance from a bit line or word line to an underlying free layer in an MTJ is small and well controlled. As a result, the bit line or word line switching current is reduced and tightly distributed for better device performance. A key ... 11/24/05 - 20050260772 - A method of forming a magnetic tunneling junction (mtj) mram device and a tunneling magnetoresistive (tmr) read head An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and to have a high breakdown voltage. The seed layer ... 11/03/05 - 20050244988 - Method for fabricating semiconductor device A PLZT film (30) is formed as the material film of a capacitor dielectric film and a top electrode film (31) is formed on the PLZT film (30). The top electrode film (31) comprises two IrOx films having different composition. Subsequently, back face of a semiconductor substrate (11) is cleaned ... 10/27/05 - 20050239220 - Rate gyroscope and accelerometer multisensor, and method of fabricating same A rate gyroscope and accelerometer multisensor, and a process for fabricating the device. The device has an inner magnetically-suspended spinning wheel rotor, with outer stator portions adjacent both faces of the rotor. In one embodiment of the process, three substrates of magnetic material are provided. A first substrate is used ... 10/27/05 - 20050239219 - Process for fabrication of a ferrocapacitor with a large effective area In a ferroelectic capacitor including a dielectric ferroelectric element sandwiched between a bottom electrode and top electrode, the bottom electrode is formed with a ridged structure, and the ferroelectric layer is formed over it and on its sides. Thus the dielectric between the top and bottom electrodes includes not just ... 10/27/05 - 20050239218 - Ferroelectric capacitor having a substantially planar dielectric layer and a method of manufacture therefor The present invention provides a ferroelectric capacitor, a method of manufacture therefor, and a method of manufacturing a ferroelectric random access memory (FeRAM) device. The ferroelectric capacitor (100), among other elements, includes a substantially planar ferroelectric dielectric layer (165) located over a first electrode layer (160), wherein the substantially planar ... 10/20/05 - 20050233476 - Method for fabricating ferroelectric capacitive element and ferroelectric capacitive element A method for fabricating a ferroelectric capacitive element of this invention includes the steps of forming a lower electrode made of a first conductive film on a substrate; forming a first ferroelectric film including bismuth in a first concentration on the lower electrode; forming a second ferroelectric film including bismuth ... 10/13/05 - 20050227378 - Integrated circuit and method A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch. ... 10/13/05 - 20050227377 - Creation of electron traps in metal nitride and metal oxide electrodes in polymer memory devices An embodiment of the invention reduces damage caused to a polymer ferroelectric layer in a polymer ferroelectric memory device by creating excess holes in the insulating metal nitride and/or metal oxide layers between the metal electrodes and polymer ferroelectric layer. The excess holes in the metal nitride and/or metal oxide ... 10/06/05 - 20050221512 - Magnetic recording medium and magnetic memory apparatus Disclosed is a magnetic memory apparatus which comprises a patterned magnetic recording medium in which multilayered films each having a first magnetic layer, a nonmagnetic metal layer or a nonmagnetic insulating layer and a second magnetic layer deposited discretely on a conductive electrode layer formed on a substrate, and a ... 10/06/05 - 20050221511 - Mram arrays with reduced bit line resistance and method to make the same Improved MRAM arrays and a method of forming the same are disclosed in which a bit line has thinner portions formed over MTJs and thicker portions therebetween. Bottom electrodes are formed in a first insulation layer on a substrate and then MTJs and a coplanar second insulation layer are formed ... 09/29/05 - 20050214954 - Semiconductor device and method for manufacturing the same Two ferroelectric capacitors including a PZT film are connected to one MOS transistor. Electrodes of the ferroelectric capacitor are arranged above a main plane of a substrate parallel to the main plane. Therefore, high capacity can be obtained easily. Furthermore, a (001) direction of the PZT film is parallel to ... 09/29/05 - 20050214953 - Method of fabricating a mram device A method of fabricating a magnetic random access memory (MRAM) device is disclosed. The method reduces the number of mask steps and processing steps required to fabricate the MRAM device. A first conductive layer and a sense layer are patterned in a first mask step. A subsequent etching step forms ... 09/22/05 - 20050208682 - Magnetic memory device and method of manufacturing the same A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which ... 09/22/05 - 20050208681 - Method for fabricating a flux concentrating system for use in a magnetoelectronics device A method for fabricating a flux concentrating system (62) for use in a magnetoelectronics device is provided. The method comprises the steps of providing a bit line (10) formed in a substrate (12) and forming a first material layer (24) overlying the bit line (10) and the substrate (12). Etching ... 09/22/05 - 20050208680 - Method for producing a reference layer and an mram memory cell provided with said type of reference layer The invention relates to a method for fabricating a reference layer for MRAM memory cells and an MRAM memory cell equipped with a reference layer of this type. A reference layer of this type comprises two magnetically coupled layers having a different Curie temperature. When cooling from a temperature above ... 09/15/05 - 20050202574 - Vehicle inner covering part having a metal structure An inner covering part for a vehicle is disclosed with a method for producing it. A two-dimensional, fluid-permeable metal structure is used and processed with a barrier layer for limiting penetration of additional or further layers through the metal structure. ... 09/08/05 - 20050196878 - Single-phase c-axis doped pgo ferroelectric thin films A method for forming a doped PGO ferroelectric thin film, and related doped PGO thin film structures are described. The method comprising: forming either an electrically conductive or electrically insulating substrate; forming a doped PGO film overlying the substrate; annealing; crystallizing; and, forming a single-phase c-axis doped PGO thin film ... 09/01/05 - 20050191766 - Constructions comprising perovskite-type dielectric The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the electrode, and a portion further from the electrode than the edge region. The portion has a different amount of crystallinity than the edge region. The ... 09/01/05 - 20050191765 - Thin film capacitor with substantially homogenous stoichiometry A method for ion implantation of high dielectric constant materials with dopants to improve sidewall stoichiometry is disclosed. Particularly, the invention relates to ion implantation of (Ba,Sr)TiO3 (BST) with Ti dopants. The invention also relates to varying the ion implantation angle of the dopant to uniformly dope the high dielectric ... 09/01/05 - 20050191764 - Method of forming a magnetic random access memory structure A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask layer is formed over the covering layer followed by a second mask layer. The first mask layer and second ... 08/25/05 - 20050186688 - Chemical vapor deposition methods and physical vapor deposition methods The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO3 comprising dielectric layers on a substrate, where “A” is selected from the group consisting of Group IIA and Group IVB elements and mixtures thereof, and where “B” is selected from the group consisting of ... 08/25/05 - 20050186687 - Methods of forming capacitors with high dielectric layers and capacitors so formed Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx)O3 (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An ... 08/25/05 - 20050186686 - Method of fabricating data tracks for use in a magnetic shift register memory device A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. Vias of approximately 10 microns tall with a cross-section on the order of 100 nm×100 nm are etched in this multilayered stack of alternating ... 08/18/05 - 20050181523 - Ferroelectric capacitor, method of manufacturing the same, and ferroelectric memory A method of manufacturing a ferroelectric capacitor is provided capable of reducing manufacturing damages. In the method of manufacturing a ferroelectric capacitor, by sequentially depositing a lower electrode, a ferroelectric film, and an upper electrode on a substrate, dielectric films are formed, and then an ion beam is irradiated onto ... 08/04/05 - 20050170534 - Ferroelectric capacitor, method of manufacturing same, and semiconductor memory device A ferroelectric capacitor has the property that polarization of a ferroelectric thin film can readily be reversed and polarization-reversal charge increased. The ferroelectric capacitor has a bottom electrode, a ferroelectric thin film and a top electrode. The top electrode includes a metal crystalline phase and 0.5 to 5 atm % ... 08/04/05 - 20050170533 - Magnetic tunnel junction device with a compositionally modulated electrode A magnetic tunnel junction device with a compositionally modulated electrode and a method of fabricating a magnetic tunnel junction device with a compositionally modulated electrode are disclosed. An electrode in electrical communication with a data layer of the magnetic tunnel junction device includes a high resistivity region that has a ... 08/04/05 - 20050170532 - Novel oxidation method to fabricate low resistance tmr read head A method is provided for forming a magnetoresistive read head with an MTJ configuration having an ultra-thin tunneling barrier layer with low resistance and high breakdown strength. The barrier layer is formed by natural oxidation of an ultra-thin (two atomic layers) Al or Hf-Al layer deposited on an electrode whose ... 08/04/05 - 20050170531 - Method for formation of an ultra-thin film and semiconductor device containing such a film A method of manufacturing an ultra-thin PZT pyrochlore film comprises providing a structure comprising a base layer, and forming on the base layer, a titanium layer and a PZT layer in mutual contact. The structure is annealed to form a PZT pyrochlore layer on said base layer. Novel devices with ... 07/28/05 - 20050164414 - Magnetic annealing sequences for patterned mram synthetic antiferromagnetic pinned layers A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and a ferromagnetic pinned layer over the pinning layer, the pinned layer having a first thickness. The fixed layer ... 07/28/05 - 20050164413 - Method for fabricating a flux concentrating system for use in a magnetoelectronics device A method for fabricating a flux concentrating system (62) for use in a magnetoelectronics device is provided. The method comprises the steps of providing a bit line (10) formed in a substrate (12) and forming a first material layer (24) overlying the bit line (10) and the substrate (12). Etching ... 07/21/05 - 20050158883 - Multilayered structure film and method of making the same First atoms are subjected to heat treatment after deposition so as to form a first polycrystalline layer. Second atoms are deposited on the surface of the first polycrystalline layer so as to form a second polycrystalline layer having a thickness larger than that of the first polycrystalline layer. The method ... 07/21/05 - 20050158882 - Method of forming nano-sized mtj cell without contact hole Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, ... 07/21/05 - 20050158881 - Method of making toroidal mram cells This invention provides a method of making nano-scaled toroidal magnetic memory cells, such as may be used, for example, in magnetic random access memory (MRAM). In a particular embodiment a semiconductor wafer substrate is prepared and a conductor layer is provided upon the wafer. A hard layer is deposited upon ... 07/14/05 - 20050153463 - Method for fabricating ferroelectric capacitor A method for fabricating a ferroelectric memory having memory cells arranged in arrays, wherein an Al2O3 film (2), a Pt film (3), a PZT film (4) and IrO2 film (5) are formed on an interlayer insulation film. At the time of forming a top electrode, the IrO2 film (5) is ... 07/14/05 - 20050153462 - Method for fabricating semiconductor device and semiconductor device As a method for fabricating a semiconductor device, a lower electrode is first formed on a semiconductor substrate and then a first ferroelectric film is formed on the lower electrode by CVD using a first source gas. Thereafter, a second ferroelectric film is formed on the first ferroelectric film by ... 07/14/05 - 20050153461 - Process for controlling performance characteristics of a negative differential resistance (ndr) device A variety of processes are disclosed for controlling NDR characteristics for an NDR element, such as peak-to-valley ratio (PVR), NDR onset voltage (VNDR) and related parameters. The processes are based on conventional semiconductor manufacturing operations so that an NDR device can be fabricated using silicon based substrates and along with ... 06/30/05 - 20050142668 - Method of manufacturing thin film magnetic head Provided is a method of manufacturing a thin film magnetic head. In particular, a method of manufacturing a thin film magnetic head is provided in which a flow process of a photoresist is applied to separate a hard magnetic layer and a metal multi-layer and a photoresist is used to ... 06/30/05 - 20050142667 - Fabrication method of self-aligned ferroelectric gate transistor using buffer layer of high etching selectivity A fabrication method of a self-aligned ferroelectric gate transistor using a buffer layer of high etching selectivity is disclosed. A stacked structure is formed with a buffer layer with high etching selectivity inserted between a silicon substrate and a ferroelectric layer, and etching is performed on a portion where a ... 06/23/05 - 20050136557 - Reducing shunts in memories with phase-change material A memory cell may include a phase-change material. Adhesion between the phase-change material and a dielectric or other substrate may be enhanced by using an adhesion enhancing interfacial layer. Conduction past the phase-change material through the interfacial layer may be reduced by providing a discontinuity or other feature that reduces ... 06/23/05 - 20050136556 - Manufacturing method of semiconductor device An IrOx film is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the ... 06/23/05 - 20050136555 - Method of manufacturing semiconductor device An Ir film, an IrOx film, a Pt film, a PtO film and a Pt film are formed, and thereafter a PLZT film is formed. Then, heat treatment at 600° C. or lower is performed by the RTA method in an atmosphere containing Ar and O2 to thereby crystallize the ... 06/23/05 - 20050136554 - Method for manufacturing semiconductor device An Al2O3 film for covering a ferroelectric capacitor is formed by a sputtering process. The thickness of the Al2O3 film is preferably optimized according to amount of remanent polarization and fatigue tolerance required for the ferroelectric capacitor, for example, 10 nm to 100 nm. Next, oxygen is supplied to a ... 06/16/05 - 20050130328 - Method of making a haze free, lead rich pzt film An embodiment of the invention is a method of fabricating a haze free, phase pure, PZT layer, 3, where a lead rich PZT film, 102, is formed over a phase pure stoichiometric PZT film, 101. ... 06/16/05 - 20050130327 - Shielding arrangement to protect a circuit from stray magnetic fields A shielding arrangement for protecting a circuit containing magnetically sensitive materials from external stray magnetic fields. A shield of a material having a relatively high permeability is formed over the magnetically sensitive materials using thin film deposition techniques. Alternatively, a planar shield is affixed directly to a surface of semiconductor ... 06/16/05 - 20050130326 - Method for fabricating capacitor in semiconductor device The present invention relates to a method for fabricating a capacitor in a semiconductor device through the use of hafnium-terbium oxide (Hf1-xTbxO) as a dielectric layer. The method includes the steps of: forming a lower electrode on a substrate; forming an amorphous hafnium-terbium oxide (Hf1-xTbxO) dielectric layer on the lower ... 06/02/05 - 20050118734 - Ferroelectric memory and method for manufacturing the same A capacitor upper electrode and a wiring are electrically connected to each other by using a plug and a conductive layer formed below a capacitive element without using a plug that directly connects the capacitor upper electrode to the wiring provided thereon via an interlayer insulating film therebetween. Alternatively, the ... 06/02/05 - 20050118733 - Production of microscopic and nanoscopic coils, transformers and capacitors by rolling or folding over conductive layers during the removal of auxiliary layers from a substrate By removing the auxiliary layer (3) from the substrate (1), for example by virtue of a sacrificial layer (2) situated in between being selectively etched away, the auxiliary layer (3) folds back and, if appropriate, automatically rolls up upon continuation of the removal operation and a conductor track (4) concomitantly ... ### FreshPatents.com Support |