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Radiation Imagery Chemistry: Process, Composition, Or Product Thereof > Nonradiation Sensitive Image Processing Compositions Or Process Of Making > Developer DeveloperDeveloper patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/30/06 - 20060068337 - Substrate processing method In the present invention, a substrate processing method, in which a developing treatment is performed after exposure processing of a pattern, includes a shaping step of shaping the shape of a resist pattern such that a side wall portion of the resist pattern after the developing treatment swells out to ... 12/22/05 - 20050282094 - Developer for a photopolymer protective layer This invention relates to a composition used as a developer that contains a surfactant to improve the developing of photoresist, which may contain at least 50 mol % of monomers containing carboxylic acid. The present invention is also a process for the use of the composition. ... 06/23/05 - 20050136364 - Stable developer dispersions for color photothermographic systems Solid particle dispersions of blocked developers useful in imaging elements can be made with substantially improved stability to particle growth by dispersing the blocked developer of interest in the presence of a relatively small amount of an additional blocked developer that is structurally similar to the main blocked developer of ... 06/16/05 - 20050130082 - Developing solution for photoresist A novel developing solution for photoresists which is suitable for use as a developing solution for a photoresist formed on an aluminum-containing base formed on a wafer. It comprises an alkali builder, a calcium compound, and a chelating agent, the chelating agent being selected from the group consisting of 1-hydroxyethylidene-1,1-diphosphonic ... 06/02/05 - 20050118541 - Maintenance of photoresist adhesion and activity on the surface of dielectric arcs for 90 nm feature sizes We have traced the detachment of photoresist during development of patterned features in the range of about 90 nm and smaller to a combination of the reduced “foot print” of the pattern on the underlying substrate and to the contact angle between the underlying substrate surface and the developing reagent. ... ### FreshPatents.com Support |