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Radiation Imagery Chemistry: Process, Composition, Or Product Thereof > Including Control Feature Responsive To A Test Or Measurement Including Control Feature Responsive To A Test Or MeasurementIncluding Control Feature Responsive To A Test Or Measurement patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.06/07/07 - 20070128529 - Exposure method and apparatus, coating apparatus for applying resist to plural substrates, and device manufacturing method Disclosed are an exposure method and apparatus, a coating apparatus and a device manufacturing method, wherein, in one preferred form, the exposure method is used to expose a resist having been applied onto a substrate by one of a plurality of resist coating units, and it includes a selecting step ... 05/24/07 - 20070117032 - Method for determining an exposure dose and exposure apparatus A method of determining an exposure dose for writing a pattern using an electron beam writer determines a target dose in the exposure region to obtain a predetermined energy deposition in a specific position of the exposure region, the predetermined energy deposition being larger than a reference energy deposition in ... 05/10/07 - 20070105029 - Differential critical dimension and overlay metrology apparatus and measurement method A method is described for measuring a dimension on a substrate, wherein a target pattern is provided with a nominal characteristic dimension that repeats at a primary pitch of period P, and has a pre-determined variation orthogonal to the primary direction. The target pattern formed on the substrate is then ... 05/03/07 - 20070099100 - Method for exposing a substrate and lithographic projection apparatus A method for improving the uniformity of a lithographic process. In one aspect, the probability density function of a first and second lithographic apparatus are matched by providing a continuous z-motion to a stage in the first lithographic apparatus during substrate exposure. Preferably, the z-motion is characterized by a normally ... 05/03/07 - 20070099099 - Lithographic apparatus and device manufacturing method A lithographic apparatus has a patterning support holding a patterning device. At least one position sensor measures a position of the patterning device relative to the patterning support, and generates a measuring signal. A positioning device controls a position of the patterning support on the basis of the measuring signal ... 04/26/07 - 20070092811 - Method for selecting photomask substrate, method for manufacturing photomask, and method for manufacturing semiconductor device According to an aspect of the invention, there is provided a method for selecting a photomask substrate, including dividing a chip area scheduled to be arranged on the photomask substrate regarding a specific transfer pattern layer into a management pattern area in which an element pattern changed in shape by ... 04/26/07 - 20070092810 - Mask-less method of forming aligned semiconductor wafer features A method of forming features in a semiconductor is disclosed. The method includes providing a wafer substrate including a surface having a reflective region, and coating the surface with a photosensitive layer. The method additionally includes exposing the photosensitive layer. The method further includes controlling exposure intensity such that the ... 04/12/07 - 20070082281 - Compensating for effects of topography variation by using a variable intensity-threshold One embodiment of the present invention provides a system that accurately determines a critical dimension of a feature in a layout by compensating for the effects of topography variation on the performance of an optical lithography process. During operation, the system first receives a layout. Next, the system computes an ... 04/12/07 - 20070082280 - Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based ... 04/12/07 - 20070082279 - Near-field exposure method and device manufacturing method using the same Disclosed is a near-field exposure method including a process of bringing a light blocking film with a plurality of small openings each having an opening width not greater than a wavelength of exposure light, into close contact with a photoresist layer provided on a surface of a substrate, and a ... 04/05/07 - 20070077504 - Method for opc model generation A method for generating or refining an OPC model for use in wafer fabrication. A predetermined feature layout is used to prepare a mask for use in, for example, a photolithographic process. The mask is used to create structures corresponding to mask features on a semiconductor wafer using the mask. ... 03/15/07 - 20070059615 - Method and system for improved lithographic processing A method is described for setting up the lithographic processing of a substrate. The lithographic processing typically is characterized by a set of selectable process parameters, such as the thickness, real refractive index, and absorption coefficient of a bottom anti-reflective layer. The method includes selecting a set of values for ... 03/15/07 - 20070059614 - Method of determining an illumination profile and device manufacturing method An illumination profile useable in a lithographic apparatus to match the output of a target lithographic apparatus is obtained by obtaining a reference CD vs. pitch function for the lithographic projection apparatus at at least a plurality of pitch values using a reference illumination profile; obtaining a target CD vs. ... 03/01/07 - 20070048635 - Method and system for automatically detecting exposed substrates having a high probability for defocused exposure fields By automatically estimating the focus status of individual substrates or lots on the basis of focus-specific tool information obtained from the exposure tool, such as tilt angle ranges used during the automatic focusing procedures, possible hot spot errors may be detected highly efficiently prior to releasing the substrates to a ... 02/15/07 - 20070037080 - Projection optical system, exposure apparatus, and exposure method A catadioptric projection optical system for forming a reduced image of a first surface (R) on a second surface (W) is a relatively compact projection optical system having excellent imaging performance as well corrected for various aberrations, such as chromatic aberration and curvature of field, and being capable of securing ... 02/15/07 - 20070037079 - Projection optical system, exposure apparatus, and exposure method A catadioptric projection optical system for forming a reduced image of a first surface (R) on a second surface (W) is a relatively compact projection optical system having excellent imaging performance as well corrected for various aberrations, such as chromatic aberration and curvature of field, and being capable of securing ... 02/15/07 - 20070037078 - Reference wafer for calibrating semiconductor equipment A reference wafer for calibrating a laser and a camera and checking laser accuracy and spot size. The reference wafer may include a light absorption layer on a semiconductor substrate and a light reflection layer pattern on the light absorption layer. The light reflection layer pattern may include a first ... 02/08/07 - 20070031745 - System and method for creating a focus-exposure model of a lithography process A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter ... 02/08/07 - 20070031744 - Lithography process optimization and system The first and second example embodiments are Pattern Fidelity Optimization Procedures for a Multiple Exposure Scheme. In the third example embodiment, the aperatures from the multiple exposure system can be combined into a single aperture by adding the apertures and modulating the relative transmission thru the respective apertures to match ... 02/01/07 - 20070026325 - Substrate distortion measurement A distortion measurement apparatus comprising a detector arranged to measure distortion of a substrate, and a processor arranged to receive distortion data indicating the measured distortion of the substrate and to transform the distortion data into a frequency domain representation. The distortion data may alternatively be transformed into an orthogonal ... 01/25/07 - 20070020537 - Exposure apparatus correction system, exposure apparatus correcting method, and manufacturing method of semiconductor device An exposure apparatus correction system comprising: a displacement calculator which calculates matching displacements between a first inspection pattern and a second inspection pattern, the first inspection pattern being transferred by an external first exposure apparatus, the second inspection pattern being positioned with respect to the first inspection pattern and transferred ... 01/11/07 - 20070009816 - Method and system for photolithography A transparent optical element in a region between a photo mask and a light source of a photolithographic apparatus is provided having a plurality of attenuating elements being arranged in accordance with a first intensity correction function. The first intensity correction function is calculated from variations of characteristic feature size ... 01/11/07 - 20070009815 - Method of wafer edge exposure In an embodiment, a method of wafer edge exposure includes sensing a reference position of a wafer edge exposure. A boundary for the edge exposure is set at a predetermined distance from the reference position, and then the edge region of the wafer is exposed. A first boundary for the ... 01/11/07 - 20070009814 - Method for calibrating or qualifying a lithographic apparatus or part thereof, and device manufacturing method A system and method are provided for qualifying or calibrating lithographic apparatus or parts therefor, using a predetermined objective criterion such as Chauvenet's criterion is used to reject measurement points, individually, by field or by substrate. ... 12/07/06 - 20060275678 - Phase difference specifying method A phase shift mask comprises first and second mask patterns. The first mask pattern is a backing film enabling a first optical image to be formed on a substrate. The first optical image forms a resist pattern having a width that changes depending on the distance between the phase shift ... 11/23/06 - 20060263707 - Image forming apparatus An image forming apparatus for recording of a target image onto a photosensitive material film corresponding to the photosensitive material film, includes: storage section that stores the data corresponding to the photosensitive material film; density measuring section that measures a density of a density test pattern recorded on the photosensitive ... 11/16/06 - 20060257765 - System and method for photolithography in semiconductor manufacturing A method for photolithography in semiconductor manufacturing includes providing one or more masks for a wafer; defining a reference focus plane of a first mask of the one or more masks; defining a reference focus plane of a second mask of the one or more masks; and determining the best ... 10/19/06 - 20060234145 - Method for determining and correcting reticle variations Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels ... 10/19/06 - 20060234144 - Method for monitoring a reticle Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may “heal” the SEs. Disclosed are techniques for monitoring a reticle in order to maintain ... 10/05/06 - 20060222975 - Integrated optical metrology and lithographic process track for dynamic critical dimension control A method and apparatus for improving a yield and throughput of a lithographic process track, the method including providing a first resist layer on a first process wafer; forming a first resist pattern in the first resist layer including a heating process according to a first temperature profile wherein the ... 09/21/06 - 20060210893 - Method and system for overlay control using dual metrology sampling A system and method are provided for determining an overlay of a first layer N−1 and a second layer N that are positioned one over the other on a substrate. The first layer includes a first overlay portion. The second layer includes a first complementary overlay portion. The first overlay ... 09/14/06 - 20060204869 - Laser processing device There is disclosed a laser processing device, comprising: a laser light source for emitting laser light; an irradiating optical system for irradiating laser light emitted from the laser light source substantially perpendicularly onto a processing surface of an object to be processed; a reflected light monitoring unit for monitoring the ... 09/14/06 - 20060204868 - Material deposition method and/or system Embodiments of a method and/or system for material deposition are disclosed. ... 09/14/06 - 20060204867 - Material deposition method and/or system for layers including repetitive features Embodiments of a method and/or system for material deposition for layers that include repetitive features are disclosed. ... 09/07/06 - 20060199091 - Printing a mask with maximum possible process window through adjustment of the source distribution Disclosed is a method for illuminating a lithographic mask with light from different directions, in such a way that the intensities of the various incident beams provide the largest possible integrated process window. The process window is defined in terms of allowable ranges for printed shapes. For example, boundaries of ... 09/07/06 - 20060199090 - Method of setting focus condition at time of exposure, apparatus for setting focus condition at time of exposure, program, and computer readable recording medium In the present invention, in the photolithography process in which a certain focus condition has been already set, a film on a substrate is exposed to only zero-order light of a light source transmitted, and then developed to reduce a first portion of the film on the substrate. Further, the ... 09/07/06 - 20060199089 - Method for manufacturing a semiconductor device A method for manufacturing a semiconductor device is disclosed. The method can assess exposure conditions by forming a predetermined assessment pattern on a principal surface of a semiconductor wafer. The predetermined assessment pattern includes a first assessment pattern having a remaining pattern, and a second assessment pattern which includes a ... 09/07/06 - 20060199088 - Laser etched fiducials in roll-roll display The present invention relates to a method of aligning comprising providing a support, applying a transparent layer, patterning at least the transparent layer to produce a pattern and an alignment feature capable of scattering light, illuminating the support and the transparent layer with oblique lighting, providing an analysis system capable ... 09/07/06 - 20060199087 - Method of making an integrated circuit by modifying a design layout by accounting for a parameter that varies based on a location within an exposure field An original layout of an integrated circuit is modified using optical proximity correction (OPC) to obtain a second layout. During OPC, a sensitivity to flare for each feature is conveniently identified. To map the flare, the amplitude of intensity is mapped over a field of exposure, which is typically a ... 08/31/06 - 20060194130 - Run to run control for lens aberrations An exposure tool includes an illumination source, a blazed phase grating reticle, a reticle stage holding the blazed phase grating reticle, a lens system including at least one adjustable lens element, a wafer stage holding a sample, and a controller. The controller is configured to control the illumination source and ... 08/31/06 - 20060194129 - Substrate edge focus compensation A method for compensating a focus of an exposure field of view in an exposure tool. A height at a plurality of positions is measured across a substrate at a given layer using a tool other than the exposure tool. Edge positions on the substrate are identified where the height ... 08/24/06 - 20060188797 - Apparatus and method for optical interference fringe based integrated circuit processing An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, light is directed on the integrated circuit and based upon the detection of interference fringes, further processing may be controlled. One implementation involves charged particle beam processing of an integrated circuit as function of detection ... 08/24/06 - 20060188796 - Performing opc on structures with virtual edges A method for compensating for optical distortions occurring in regions associated with non-phase-shifting regions in a mask or reticle. OPC or other resolution enhancement techniques are performed on one or more edge segments associated with adjacent phase-shifting regions in order to compensate for edge position errors occurring in areas corresponding ... 08/17/06 - 20060183040 - Method for controlling semiconductor device production process and a method for producing semiconductor devices In order to realize individually and easily optimization of exposure conditions such as exposure dose and focus by photolithography in a production process of semiconductor devices, the present invention is such that: light is radiated onto a pattern on a semiconductor wafer; by an optical system that detects information on ... 08/17/06 - 20060183039 - Method and systems for utilizing simplified resist process models to perform optical and process corrections A method and system for utilizing a simplified resist process model to perform optical and process corrections. More specifically, the present invention provides a fast and easy post exposure bake (PEB) effects calculation which can be used in connection with OPC. The model can be used to increase OPC modeling ... 08/03/06 - 20060172207 - Exposure analyzing system, method for analyzing exposure condition, and method for manufacturing semiconductor device An exposure analyzing system includes a microscope measuring CDs in resist patterns, each of the resist patterns being formed by specific defocus and dose conditions, an exposure condition calculator calculating functions of the specific defocus and dose conditions, each of the functions giving one of the CDs, an image arranger ... 07/20/06 - 20060160001 - Systems and methods for determining width/space limits for mask layout Systems for determining width/space limits for product mask layouts. A mask writer generates a first pattern on a test mask corresponding to a test mask layout. A lithography tool generates a second pattern on a wafer corresponding to a first pattern on a test mask by a lithography process using ... 07/13/06 - 20060154158 - Developer composition for resists and method for formation of resist pattern wherein M represents a metal atom, and any reminder member represents a hydrogen atom or a group represented by the above general formula (II). ... 07/06/06 - 20060147822 - Appartus and method for forming pattern A pattern forming apparatus includes a drawing chamber having a drawing substrate on which an original pattern is drawn, a first temperature control unit having a first temperature regulator to make the temperature of the drawing chamber constant, and a constant-temperature member arranged near the drawing substrate. The pattern forming ... 07/06/06 - 20060147821 - Lithographic apparatus and device manufacturing method A method for correcting an exposure parameter of an immersion lithographic apparatus is provided. In the method, an exposure parameter is measured using a measuring beam projected through a liquid between the projection system and a substrate table of the immersion lithographic apparatus and offset is determined based on a ... 06/29/06 - 20060141376 - Methods and systems for controlling variation in dimensions of patterned features across a wafer Methods and systems for controlling variation in dimensions of patterned features across a wafer are provided. One method includes measuring a characteristic of a latent image formed in a resist at more than one location across a wafer during a lithography process. The method also includes altering a parameter of ... 06/29/06 - 20060141375 - Exposure apparatus, a tilting device method for performing a tilted focus test, and a device manufactured accordingly The present invention relates to an exposure apparatus that includes an illumination system for providing a projection beam of radiation, a support structure for supporting a device provided with a pattern, the device serving to impart the projection beam with a pattern in its cross-section; a table for holding a ... 06/22/06 - 20060134536 - Method and system for determining post exposure bake endpoint A method of detecting post exposure bake endpoint during processing of a semiconductor substrate. The method includes providing a radiation source coupled to a post exposure bake station and providing a radiation detector coupled to the post exposure bake station. The method also includes directing a radiation signal generated by ... 06/22/06 - 20060134535 - Lensed fiber array for sub-micron optical lithography patterning In accordance with various embodiments, there is an exposure system for writing a pattern on a photosensitive material. The exposure system can include a waveguide array and a light modulator. The waveguide array can include a plurality of optical fibers that focuses light on the radiation sensitive material. The light ... 06/08/06 - 20060121375 - System and method utilizing an electrooptic modulator A system and method utilize a dynamically controllable optical element that receives an electrical field, which changes an index of refraction in at least one direction within the optical element. The change in index of refraction imparts a change to a beam of radiation passing through the optical element. The ... 06/01/06 - 20060115753 - Method and apparatus for performing target-image-based optical proximity correction A system that performs target-image-based optical proximity correction on masks that are used to generate an integrated circuit is presented. The system operates by first receiving a plurality of masks that are used to expose features on the integrated circuit. Next, the system computes a target image for a target ... 06/01/06 - 20060115752 - System and method for generating pattern data used to control a pattern generator A method and system are used to modify pattern data obtained in relation to a pattern on a static patterning device. It is suggested that, in an example when a maskless lithography tool is used, continuous OPC-enhanced features used for maskless lithography rasterization should include a variation in local amplitude ... 05/25/06 - 20060110667 - Method of fabrication of semiconductor integrated circuit device and mask fabrication method An area for fabricating a photomask having light-shielding patterns each formed of an organic film, and areas for fabricating a semiconductor integrated circuit device are provided within the same clean room. A manufacturing device and an inspecting device are commonly used during the fabrication of the photomask and the fabrication ... 05/25/06 - 20060110666 - Stray light feedback for dose control in semiconductor lithography systems A stray light feedback system and method for a lithography exposure tool. The stray light feedback helps control critical dimension (CD) within a stray light specification limit. A stray light dose control factor is calculated as a function of the stray light measured in the exposure tool and the sensitivity ... 03/23/06 - 20060063078 - Exposure parameter obtaining method, exposure parameter evaluating method, semiconductor device manufacturing method, charged beam exposure apparatus, and method of the same An exposure parameter obtaining method comprising forming a charged reference pattern and a plurality of charged exposure patterns at a surface region of a to-be-exposed insulation substrate by projecting a charged beam with a first incident energy using a reference pattern whose exposure parameter has been known beforehand and all ... 03/09/06 - 20060051687 - Inspection system and inspection method for pattern profile An inspection system includes a microscope configured to observe a mask pattern of a photomask and a projected image of the mask pattern on a substrate, a circuit data memory configured to store design data of a circuit pattern to be formed on the substrate by the mask pattern, a ... 03/02/06 - 20060046168 - Method for designing an illumination light source, method for designing a mask pattern, method for manufacturing a photomask, method for manufacturing a semiconductor device and a computer program product A method for designing an illumination light source, includes acquiring a control feature to control a dimension of a transferred pattern of a mask pattern; designating a plurality of illumination elements illuminating the mask pattern; designating first illumination lights to each of first polarization states of a light emitted from ... 03/02/06 - 20060046167 - Characterizing flare of a projection lens Flare of an imaging system is measured using resist by employing the imaging system to directly expose a first part of the resist at an image plane of the imaging system to a first dose of radiation and to indirectly expose a second part of the resist as a result ... 03/02/06 - 20060046166 - Controlling critical dimensions of structures formed on a wafer in semiconductor processing In semiconductor processing, the critical dimensions of structures formed on a wafer are controlled by first developing photoresist on top of a film layer on a wafer using a developer tool, the photoresist development being a function of developer tool process variables including temperature and length of time of development. ... 03/02/06 - 20060046165 - Lithographic apparatus, device manufacturing method, calibration method and computer program product To calibrate a lithographic apparatus contrast in the aerial image is measured for a plurality of different settings of available manipulators of the projection system. Appropriate settings of the manipulators are determined as those giving the maximum contrast values. ... 02/16/06 - 20060035160 - Lithographic apparatus and device manufacturing method A system and method use a lithographic apparatus to direct a plurality of patterned beams onto a substrate supported on a substrate table. The patterned beams are projected onto target portions of the substrate and relative displacement between the substrate and the patterned beams causes the beams to be scanned ... 02/02/06 - 20060024594 - Method for exposing a substrate with a structure pattern which compensates for the optical proximity effect In a circuit layout, a partial area is defined in a first structure pattern, which is stored electronically in a data format and represents a first lithographic plane, in which partial area a lower limit value for the length of a serif to be added to a structure element in ... 01/12/06 - 20060008716 - Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus A manufacturing method is utilized in lithographic projection apparatus in order to enable all aberrations to be compensated for but with those aberrations that are of most significance to the particular application (the particular pattern, illumination mode, etc.) being given precedence over aberrations that are of lesser significance in relation ... 01/12/06 - 20060008715 - Exposure system and method An exposure system and method for use in an exposure tool. The system includes a compensation unit and an exposure unit. The compensation unit receives a fine-tuning value for an overlay correction parameter for a product in a first run. The compensation unit further receives an adjustment period for an ... 01/12/06 - 20060008714 - Method for producing a marker on a substrate, lithographic apparatus and device manufacturing method A method of producing a marker on a substrate includes projecting a patterned beam on a layer of resist disposed on a substrate in a lithographic apparatus to create a latent marker; and locally heating the substrate at the marker location in the lithographic apparatus to transform the latent marker ... 01/05/06 - 20060003240 - Methods for adjusting light intensity for photolithography and related systems Correcting light intensity for photolithography may include irradiating light having a first light intensity distribution through a photo mask having a mask pattern to a photosensitive layer on a wafer to form a first pattern corresponding to the mask pattern. A distribution of critical dimensions of the first pattern corresponding ... 12/29/05 - 20050287451 - Method for reducing the fogging effect Method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which are conform to design data. A model for the fogging effect is fitted by individually changing at least the basic input parameters of the ... 12/29/05 - 20050287450 - Process for controlling the proximity effect correction A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed without applying the process for controlling the proximity ... 12/29/05 - 20050287449 - Optical and electrical blending of display images A method and a device for soft edge blending of projected display images (16a, 16b) is provided. The method combines optical and electrical soft edge blending in an blending area (26) by using electrical blending in one fraction (146a, 146b) of the blending area (26a, 26b) of two or more ... 12/15/05 - 20050277035 - Exposure measurement method and apparatus, and semiconductor device manufacturing method An exposure measurement apparatus is configured by including a size measurer measuring respective sizes of at least a pair of transferred patterns having mutually different optimal focus positions out of a plurality of transferred patterns formed by being transferred onto a transfer object, a difference value calculator obtaining a difference ... 12/08/05 - 20050271957 - Evaluation method and fabrication method of optical element having multilayer film, exposure apparatus having the multilayer film, and device fabrication method A fabrication method of an optical element having a multilayer film includes the steps of forming a multilayer film on a substrate, measuring a secondary radiation radiated from the multilayer film when a light with a wavelength of 2 to 40 nm is irradiated to the multilayer film, determining a ... 12/08/05 - 20050271956 - Method and apparatus for generating exposure data An exposure data generation method for generating exposure data that can enhance exposure throughput by making the number of shots in each of unit areas where a plurality of charged particle beams are simultaneously applied equal. Layout data is extracted as a plurality of blocks for cell projection exposure. If ... 12/01/05 - 20050266323 - Lithographic apparatus and device manufacturing method A device manufacturing method for a substrate of a batch of substrates includes conveying the substrate to an exposing position of a lithographic apparatus, exposing the substrate at the exposing position to a beam of radiation of the lithographic apparatus, and conveying the exposed substrate from the exposing position toward ... 11/10/05 - 20050250026 - Overlay box structure for measuring process induced line shortening effect The present invention enables the user to measure process line shortening (PLS) on an overlay tool. In an example embodiment (900), to obtain the PLS, the user applies a method to determine the misalignment (MA) of a composite image on a substrate (940a), from the composite image the user may ... 11/10/05 - 20050250025 - Method and lithographic structure for measuring lengths of lines and spaces There is a structure and method for measuring the lengths of lines and spaces in semiconductor process. In an example embodiment, a lithographic structure (400) comprises, a frame (450). The frame includes a top inside edge, a top outside edge, a bottom inside edge, a bottom outside edge, a left ... 11/03/05 - 20050244729 - Method of measuring the overlay accuracy of a multi-exposure process A method of measuring the overlay accuracy of a multi-exposure process is provided. The characteristic of this invention is utilizing a scanning electron microscope for monitoring the overlay accuracy real-time during the multi-exposure processes in stead of the conventional optical measurement method. ... 10/20/05 - 20050233227 - Methods for improving angled line feature accuracy and throughput using electron beam lithography and electron beam lithography system Methods to reduce the write time for forming mask patterns having angled and non-angled features using electron beam lithography are disclosed. In one exemplary embodiment, non-angled features of the mask pattern are formed by exposure to an electron beam. The orientation of the substrate and a path of the generally ... 10/06/05 - 20050221208 - Resist pattern formation method, patterned substrate manufacturing method, and resist pattern formation apparatus A resist pattern formation apparatus includes a resist layer formation section of forming a resist layer on a substrate, an exposure section of applying light to the resist layer through a mask pattern, a development section of developing the resist layer, a defect inspection section of inspecting defect in a ... 10/06/05 - 20050221207 - Method and apparatus for monitoring exposure process An exposure process monitoring method capable of performing quantitative monitoring of an exposure amount and a focusing position which are major process parameters during exposure using a Levinson phase shift mask in semiconductor lithography processes is disclosed. During exposure using the Levinson phase shift mask, the focus position is influenceable ... 09/22/05 - 20050208396 - Short edge smoothing for enhanced scatter bar placement An edge-smoothing process identifies a target edge fragment among a number of edge fragments that form a feature in a photolithographic design. Each of the edge fragments has a length and a classification. The length of the target edge fragment is less than a minimum scatter bar length. The target ... 09/15/05 - 20050202328 - Process for determination of optimized exposure conditions for transverse distortion mapping A process for providing illumination source conditions for the accurate determination Zernike tilt coefficients in the presence of coma is described. Large feature-shift coma sensitivity is simulated for a range of illumination conditions. The resulting source sensitivity data is modeled and a practical array of source shapes, each of which ... 09/15/05 - 20050202327 - Method and arrangement for controlling focus parameters of an exposure tool A pattern can be projected on a resist film layer deposited on a semiconductor surface. The pattern can include structural elements having different feature sizes. Structural elements having feature sizes below a certain limit are not resolved on the resist film layer. The dimension of the corresponding resist pattern can ... 09/15/05 - 20050202326 - Optimized placement of sub-resolution assist features within two-dimensional environments A method of creating a photomask layout for projecting an image of an integrated circuit design comprises creating a layout of spaced integrated circuit shapes to be projected via the photomask, determining bisectors between adjacent ones of the spaced integrated circuit shapes, and creating sub-resolution assist features along at least ... 09/08/05 - 20050196689 - Method for transferring a layout of an integrated circuit level to a semiconductor substrate A mask level layout has an arrangement of lines and spaces with the spaces interconnected by a further space. The spaces are alternately acted upon with a phase deviation with respect to the spaces, where a phase edge between spaces acted upon differently arises in the region of the further ... 08/25/05 - 20050186491 - Method for improved lithographic patterning utilizing multiple coherency optimized exposures and high transmission attenuated psm A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern ... 08/04/05 - 20050170269 - Pattern formation method and method for forming semiconductor device A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the ... 08/04/05 - 20050170268 - Semiconductor device fabrication method and fabrication apparatus using a stencil mask A semiconductor device fabrication method includes preparing a substrate having a first circuit pattern of a semiconductor device; providing a mask with at least part of second circuit pattern of the semiconductor device; collimating incident direction of particles; changing at least one of the a substrate angle between a vertical ... 06/30/05 - 20050142470 - Feature optimization using interference mapping lithography Disclosed concepts include a method of, and program product for, optimizing an illumination profile of a pattern to be formed in a surface of a substrate relative to a given mask. Steps include mathematically representing resolvable feature(s) from the given mask, generating an interference map representation from the previous step, ... 06/23/05 - 20050136346 - Optimized correction of wafer thermal deformations in a lithographic process A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of ... 06/09/05 - 20050123845 - Method of adjusting deviation of critical dimension of patterns A method of adjusting a deviation of a critical dimension of patterns formed by a photolithography process is disclosed. The method comprises measuring the deviation of the critical dimension of patterns formed by the photolithography process and then forming a recess, an undercut, or an isotropic groove in a photomask. ... ### FreshPatents.com Support |