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Radiation Imagery Chemistry: Process, Composition, Or Product Thereof > Radiation Modifying Product Or Process Of Making > Radiation Mask Radiation MaskRadiation Mask patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.06/07/07 - 20070128528 - Mask blank and photomask having antireflective properties The present invention relates to mask blanks with anti reflective coatings comprising at least two sublayers. Such bilayer or multilayer anti reflective coatings are advantageous for binary and phase shift mask blanks for use in lithography for an exposure wavelength of 300 nm or less with improved anti reflection properties; ... 06/07/07 - 20070128527 - Angled-wedge chrome-face wall for intensity balance of alternating phase shift mask A method and structure for a phase shift mask having a light reducing layer with sloped sidewalls. In some embodiments, the sloped sidewalls can help improve the image imbalance. The mask comprising: a substrate having a first region, a second region and a third region; the third region position between ... 06/07/07 - 20070128526 - Non-collinear end-to-end structures with sub-resolution assist features Sub-resolution assist features for non-collinear features are described for use in photolithography. A photolithography mask with elongated features is synthesized. An end-to-end gap between two features if found for which the ends of the two features facing the gap are linearly offset from one another. A sub-resolution assist feature is ... 06/07/07 - 20070128525 - Sub-resolution assist features for photolithography with trim ends Sub-resolution assist features with trim ends are described for use in photolithography. A photolithography mask with elongated features is synthesized. A sub-resolution assist feature is applied to an end-to-end gap between the elongated features. Trim is applied to the ends of the sub-resolution assist feature, the trim connecting the sub-resolution ... 06/07/07 - 20070128524 - Method of arranging mask patterns A method of arranging mask patterns, which includes a first mask has a first mask pattern, a second mask has a second mask pattern. The distance between the first mask boundary and the first mask pattern boundary is different form the distance between the second mask boundary and the second ... 05/31/07 - 20070122720 - Polarized reticle, photolithography system, and method of fabricating a polarized reticle Polarized reticles, photolithography systems utilizing a polarized reticle, and methods of using such a system are disclosed. A polarized reticle is formed having a reticle containing at least one first patterned region at least partially surrounded by at least one second patterned region. The first patterned region of the polarized ... 05/31/07 - 20070122719 - Method and apparatus for generating opc rules for placement of scattering bar features utilizing interface mapping technology A method of applying optical proximity correction features to a mask having a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; defining a set of pitch ranges corresponding to pitches exhibited by the ... 05/31/07 - 20070122718 - Method of manufacturing gray scale mask and microlens, microlens, spatial light modulating apparatus and projector A gray scale mask having distribution of light transmittance determined for the purpose of exposing a resist layer with a predetermined pattern, wherein the distribution of the light transmittance is determined so that the resist layer having been exposed in accordance with a first resist shape would be used to ... 05/24/07 - 20070117030 - Method of two dimensional feature model calibration and optimization A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a ... 05/24/07 - 20070117029 - Exposure pattern or mask and inspection method and manufacture method for the same An exposure pattern or mask inspection and manufacture method and an exposure pattern or mask are provided which can perform comparison inspection of the exposure pattern or mask with ease and at a high precision. A mask pattern portion for exposing a predetermined pattern by an exposure beam is inspected ... 05/24/07 - 20070117028 - Mask handling method, and mask and device or apparatus comprising a gripper therefor, device manufacturing method and device manufactured thereby A mask for use in a lithographic projection apparatus comprises three brackets arranged on the circumference of the mask. The brackets are provided with grooves directed to a common imaginary point and are intend to cooperate with three pins provided on a mask gripper present in a mask handling apparatus ... 05/17/07 - 20070111114 - Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using ... 05/17/07 - 20070111113 - Photo mask for mitigating stitching effect and exposing method using the same A mask which can mitigate the so-called stitching effect. The mask includes a plurality of blocks. The stitching area between two adjacent blocks is nonlinear. In an exposure process of the glass substrate for liquid crystal display, the mask can alleviate the substrate from stitching effect while exposing the glass ... 05/17/07 - 20070111112 - Systems and methods for fabricating photo masks A system and method for fabricating a photo mask are provided. The method includes preparing weak point data based on mask layout data, fabricating a photo mask based on the mask layout data and extracting critical point data by analyzing the aerial image of the fabricated photo mask based on ... 05/17/07 - 20070111111 - Light measurement apparatus and light measurement method Disclosed is a light measurement apparatus including: an optical branching device to branch light to be measured into a plurality of pieces; a time delay processing unit to give a predetermined time delay to one branched piece of the light; an optical phase diversity circuit to output an in-phase signal ... 05/17/07 - 20070111110 - In-situ plasma treatment of advanced resists in fine pattern definition A novel, in-situ plasma treatment method for eliminating or reducing striations caused by standing waves in a photoresist mask, is disclosed. The method includes providing a photoresist mask on a BARC (bottom anti-reflective coating) layer that is deposited on a feature layer to be etched, etching the BARC layer and ... 05/17/07 - 20070111109 - Photolithography scattering bar structure and method A photolithography mask includes a design feature located in an isolated or semi-isolated region of the mask and a plurality of parallel linear assist features disposed substantially perpendicular to the design feature. The plurality of parallel linear assist features may include a first series of parallel assist features disposed on ... 05/10/07 - 20070105028 - Reticle set, method for designing a reticle set, exposure monitoring method, inspection method for reticle set and manufacturing method for a semiconductor device A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque ... 05/10/07 - 20070105027 - Method for quartz bump defect repair with less substrate damage A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer ... 05/10/07 - 20070105026 - Mask, mask blank, and methods of producing these A mask decreased in warping and having a high positioning precision, provided with at least a substrate aperture formed at a portion of a silicon substrate, a first silicon oxide film formed at one surface of the silicon substrate, a single crystal silicon layer formed on the first silicon layer ... 05/10/07 - 20070105025 - Mask, mask blank, and methods of producing these A mask decreased in warping and having a high positioning precision, provided with at least a substrate aperture formed at a portion of a silicon substrate, a first silicon oxide film formed at one surface of the silicon substrate, a single crystal silicon layer formed on the first silicon layer ... 05/10/07 - 20070105024 - Structure and methodology for fabrication and inspection of photomasks A photomask, method of designing, of fabricating, of designing, a method of inspecting and a system for designing the photomask. The photomask, includes: a cell region, the cell region comprising one or more chip regions, each chip region comprising a pattern of opaque and clear sub-regions corresponding to features of ... 05/10/07 - 20070105023 - Reticle and optical proximity correction method An OPC method includes providing a primary mask having a primary pattern, forming an assist mask having a correction pattern substantially complementary to the primary pattern, and forming a reticle by overlapping the primary mask and the assist mask. The light transmittance of the correction pattern is adjustable so as ... 05/03/07 - 20070099093 - Method for providing representative features for use in inspection of photolithography mask and for use in inspection of photo-lithographically developed and/or patterned wafer layers, and products of same Critically representative features (CRF's) for use in mask-making verification and/or resist development verification are defined and/or copied into the in-scribe area used by wafer CD features. The placement of mask-CRF's in the wafer CD bar region eliminates the problem of correctly and quickly locating mask-CRF's at different positions in the ... 05/03/07 - 20070099092 - Halftone phase shift mask blank, and method of manufacture A halftone phase shift mask blank has a phase shifter film on a transparent substrate. The phase shifter film is composed of a metal silicide compound containing Mo, at least one metal selected from Ta, Zr, Cr and W, and at least one element selected from O, N and C. ... 05/03/07 - 20070099091 - Method of the adjustable matching map system in lithography A method is provided for improving layer to layer overlay of a second layer pattern on a first layer pattern formed in a substrate. A plurality of first reference marks is placed inside a pattern area on a first layer mask which is used to form the first layer pattern. ... 04/26/07 - 20070092808 - Halftone type phase shift mask blank and phase shift mask thereof A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including ... 04/26/07 - 20070092807 - Fabrication method of photomask-blank A susceptor having the most basic structure has a three-layer structure including a first and a second transparent quartz part and an opaque quartz part sandwiched therebetween. For example, the opaque quartz part is made of “foamed quartz”. In addition, the opacity of the opaque quartz part to flash light ... 04/26/07 - 20070092806 - Mask at frequency domain and method for preparing the same and exposing system using the same A mask at frequency domain comprises a plurality of amplitude patterns positioned on a first surface of the mask and a plurality of phase patterns positioned on a second surface of the mask. The amplitude patterns have different vertical thicknesses to change the amplitude of an exposing light, and the ... 04/26/07 - 20070092805 - Microlithography method using a mask with curved surface a stage for transferring the patterns on to a support (16) that has a non-nil curvature on at least one point of its surface. ... 04/19/07 - 20070087274 - Wiring correction method The presence of defects in a wiring pattern is checked by a visual method, by image processing, or the like, and when a defect is detected, information such as the position, coordinates, and size of the defect is confirmed, the type of defect is confirmed, and a processing method and ... 04/19/07 - 20070087273 - Alternating phase shift mask One inventive aspect relates to a phase shift mask suitable for lithographic processing of a device, to a method of making such a mask and to lithographic processing using such a mask. The phase shift mask is made taking into account the threshold or dose that will be used for ... 04/19/07 - 20070087272 - Method for preparing a phase-shifting mask and method for preparing a semiconductor device using the phase-shifting mask A phase-shifting mask comprises a substrate and a plurality of phase-shifting patterns made of polymer material and positioned on the substrate in an array manner. Preferably, the space between phase-shifting patterns is smaller than the width of the phase-shifting pattern along a first direction, and the space between two line-shaped ... 04/19/07 - 20070087271 - Phase-shifting mask The present phase-shifting mask comprises a substrate and a plurality of phase-shifting patterns made of polymer material and positioned on the substrate in an array manner. Preferably, the space between phase-shifting patterns is smaller than the width of the phase-shifting pattern along a first direction, and the space between two ... 04/12/07 - 20070082278 - Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam ... 04/12/07 - 20070082277 - Process margin using discrete assist features The subject invention provides a system and method for improving the process margin of a lithographic imaging system. The process margin improvement is achieved through the novel placement of discrete assist features and/or the use of forbidden pitches and specific pitch orientations. Novel geometries are utilized, which take advantage of ... 04/12/07 - 20070082276 - Notched trim mask for phase shifting mask A phase shifting mask (PSM) and a trim mask can be used in a dual exposure to form circuits on an integrated circuit. The trim mask can include first structures that define non-critical features of a design (e.g. line ends), second structures that protect areas exposed by phase shifters, wherein ... 04/12/07 - 20070082275 - Optical proximity correction photomasks An optical proximity correction photomask comprises a transparent substrate, a main feature having a first transmitivity disposed on the transparent substrate and at least one assist feature having a second transmitivity disposed beside the main feature and on the transparent substrate, wherein the first transmitivity is not equal to the ... 04/12/07 - 20070082274 - High-transmittance attenuated phase-shift mask blank The present invention discloses a HT-AttPSM (high-transmittance attenuated phase-shift mask) blank with phase-shifters composed of the (Al2O3)x/(TiO2)1-x superlattice film stacks, wherein x preferably ranges 79˜84%. Particularly, the four-stacked superlattice films of the present invention perform superior optical properties including transmittance of 19.9% and a reflectance of 3.2% at the wavelength ... 04/12/07 - 20070082273 - Photomask and image device manufacturing method In a photomask formed with a device pattern made of a light-shielding film pattern in a transfer area on a front surface of an optically transparent substrate, the photomask includes a non-device pattern such as a product identification pattern composed of a light-shielding film pattern in a non-transfer area at ... 04/12/07 - 20070082272 - Masks, lithography device and semiconductor component The invention relates to masks comprising a multilayer coating of a specified period thickness distribution such as those used in lithography devices for producing semiconductor components. One problem of projection optics concerns pupil apodization which leads to imaging defects. The invention provides that the period thickness in the mask plane ... 04/05/07 - 20070077501 - Stencil masks, method of manufacturing stencil masks, and method of using stencil masks The present invention presents a stencil mask in which various surface patterns can be formed, and in which deformation is suppressed when charged particles are introduced. A stencil mask of the present invention is provided with a semiconductor stack. A first penetrating hole corresponding to an ion introducing area is ... 04/05/07 - 20070077500 - Sub-wavelength diffractive elements to reduce corner rounding The present invention discloses a mask including: a first region near a corner of a feature, the first region including a first element, the first element being transparent to a light, the first element having a side that is smaller than a wavelength of said light; a second region near ... 04/05/07 - 20070077499 - Method for depositing multi-layer film of mask blank for euv lithography and method for producing mask blank for euv lithography A method for depositing, by ion beam sputtering, a multilayer reflective coating of a reflective mask blank for EUV lithography on a substrate having a concave defect formed thereon, characterized in that the method comprises carrying out ion beam sputtering so that an absolute value of an angle α formed ... 03/29/07 - 20070072095 - Apparatus and method for argon plasma induced ultraviolet light curing step for increasing silicon-containing photoresist selectivity Provided is a method and apparatus for increasing an etching selectivity of photoresist material. An exemplary method initiates with providing a substrate with a developed photoresist layer. The developed photoresist layer on the substrate includes polymer chains containing silicon. Next, the substrate and developed photoresist layer are exposed to an ... 03/29/07 - 20070072094 - Photomask features with chromeless nonprinting phase shifting window Aspects of the present invention provide for a novel photomask for patterning features for an integrated circuit, the photomask including a first area transmitting light in a first phase surrounded by second area, the second area transmitting light in a second phase, the second phase opposite the first phase. No ... 03/29/07 - 20070072093 - Manufacturing method of pattern formed body, and photomask for vacuum-ultraviolet light A main object of the present invention is to provide a manufacturing method of a pattern formed body which makes it possible to form property varied patterns having a desired line width, even when plural pattern formed bodies are manufactured. To achieve the object, the invention provides a manufacturing method ... 03/29/07 - 20070072092 - Rinse treatment method, developing treatment method and developing apparatus In the present invention, in a rinse treatment method of cleaning a substrate after an exposed pattern thereon has been subjected to developing treatment, the following steps are performed such as supplying pure water onto the substrate to clean the substrate with the pure water; supplying a first rinse solution ... 03/29/07 - 20070072091 - Reference wafer and process for manufacturing same An apparatus and method for manufacturing and using a calibrated registration reference wafer in a semiconductor manufacturing facility where an archive media includes etched alignment attributes. Exposing a pattern of complementary alignment attributes onto the archive media such that the pattern of complementary alignment attributes overlay and interlock with the ... 03/29/07 - 20070072090 - Reticle having a protection layer A reticle includes a reticle body having a first surface, a pattern disposed on the first surface of the reticle body, and at least a protection layer disposed on the first surface of the reticle body. The protection layer is in contact with the first surface of the reticle body. ... 03/22/07 - 20070065734 - Exposure method, exposure mask, and exposure apparatus An exposure method for exposing a workpiece on the basis of near-field light escaping from an opening of a mask. The method includes projecting non-polarized exposure light having a predetermined wavelength, emitted from a laser light source and passed through a depolarization device and a diffusion device, onto an exposure ... 03/22/07 - 20070065733 - Cpl mask and a method and program product for generating the same A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of obtaining data representing the plurality of features; and forming at least one of the plurality of features by etching a substrate to form a mesa and depositing a chrome ... 03/22/07 - 20070065732 - Photomask providing uniform critical dimension on semiconductor device and method of manufacturing the same An approach to correcting non-uniformity of critical dimension (CD) in a semiconductor wafer includes measuring 0th-order light transmitted through or reflected from a photomask in a plurality of regions of the photomask. The photomask is altered to equalize the 0th-order light from the photomask such that the wafer CD is ... 03/22/07 - 20070065731 - Photomask, method for fabricating photomask, and method for fabricating semiconductor device A method for fabricating a photomask includes the steps of forming a phase shift layer, a light-shielding layer, and a negative resist layer in that order on a transparent substrate, forming a first resist pattern including a pattern corresponding to a transfer pattern by performing first exposure and development on ... 03/22/07 - 20070065730 - Photomask and pattern formation method and mask data generation method using the same A pattern 121 provided on a transparent substrate 100 as a mask pattern includes partial patterns 121A and 121B. Each of the partial patterns 121A and 121B has a mask enhancer structure including a phase shifter 102 for transmitting exposing light in an opposite phase with respect to a transparent ... 03/22/07 - 20070065729 - Method for correcting critical dimension variations in photomasks A method for compensating for critical dimension (CD) variations of pattern lines of a wafer, by the correcting the CD of the corresponding photomask. The photomask comprises a transparent substrate having two substantially opposite surfaces, a first back surface and a second front surface on which front surface an absorbing ... 03/15/07 - 20070059611 - Mask and manufacturing method thereof A mask and a manufacturing method thereof are provided. A transparent substrate having three regions is provided first. A non-transmitting layer is formed in a first region of the transparent substrate. Then, a first photoresist layer is formed on the transparent substrate, and the first photoresist layer exposes a second ... 03/15/07 - 20070059610 - Method of making and designing dummy patterns for semiconductor devices and semiconductor devices having dummy patterns A semiconductor device with dummy patterns and methods of designing and making dummy patterns of a semiconductor device are provided. The method includes forming a first layout having main patterns, adding dot dummy patterns to the first layout to generate a second layout, and adding linked line/space dummy patterns to ... 03/15/07 - 20070059609 - Optical proximity correction mask and method of fabricating color filter An optical proximity correction mask used for fabricating a color filter includes a substrate, a mask pattern and a mending pattern. Wherein, the mask pattern is disposed on the substrate. The mask pattern and the transferred pattern, being transferred to the color filter, are not matched and cause occurrence of ... 03/15/07 - 20070059608 - Photomask, photomask manufacturing method, and photomask processing device A photomask is manufactured by a method including providing a substrate having a surface on which a predetermined pattern is to be formed, positioning the substrate in an exposure tool so as to obtain an amount of deformation of the surface due to an external force imposed on the substrate, ... 03/08/07 - 20070054204 - Photomask, method for producing the same, and method for forming pattern using the photomask A photomask includes a semi-light-shielding portion having a light-shielding property, a light-transmitting portion surrounded by the semi-light-shielding portion and a peripheral portion positioned in a periphery of the light-transmitting portion on a transparent substrate. The semi-light-shielding portion and the light-transmitting portion transmit the exposure light in the same phase each ... 03/08/07 - 20070054203 - Mask, method of producing mask, and method of producing semiconductor device To provide a mask able to prevent a drop in pattern position accuracy due to the influence of internal stress of a membrane and able to align patterns including complementary divided patterns precisely, a method of producing the same, and a method of producing a semiconductor device. A stencil mask ... 03/08/07 - 20070054202 - Mask, method of producing mask, and method of producing semiconductor device To provide a mask able to prevent a drop in pattern position accuracy due to the influence of internal stress of a membrane and able to align patterns including complementary divided patterns precisely, a method of producing the same, and a method of producing a semiconductor device. A stencil mask ... 03/08/07 - 20070054201 - Phase shifting mask for equal line/space dense line patterns A phase shifting mask suited for equal line/space, small pitched, dense line pattern is disclosed. The phase shifting mask includes a transparent substrate, a partially shielded mesa line pattern of first phase formed on the substrate, and a transparent recessed line pattern of second phase etched into the substrate and ... 03/08/07 - 20070054200 - Binary photomask having a compensation layer and method of manufacturing the same A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on ... 03/08/07 - 20070054199 - Semiconductor device manufacturing method, wafer and reticle A semiconductor device manufacturing method allowing effective inspection at low cost of a wafer having formed thereon chips. When forming chips on the wafer, a reticle having formed thereon chip patterns, monitor element/circuit patterns and connection patterns is used according to a formation step of the chips. The reticle is ... 03/08/07 - 20070054198 - Photomask for double exposure and double exposure method using the same A photomask for double exposure, and a double exposure method using the same are disclosed. The photomask for double exposure comprises a mask substrate divided into first and second regions equally arranged to upper and lower sideson different sides, respectively, a first mask pattern formed on the first region of ... 03/08/07 - 20070054197 - Mask and pattern forming method by using the same The present invention provides a mask comprising a substrate, a plurality of strip patterns and at least an assist pattern. The strip patterns are disposed on the substrate and arranged in parallel to one another. The assist pattern is in a strip shape and disposed on the substrate. The assist ... 03/08/07 - 20070054196 - Fabrication method of extreme ultraviolet radiation mask mirror using atomic force microscope lithography The present invention relates to a method for manufacturing a reflective multi-layered thin film mirror for an extreme ultraviolet radiation (EUV) exposure process that is one of the next generation exposure process masks using an atomic force microscope (AFM). This reflective multi-layered thin film mirror for extreme ultraviolet radiation (EUV) ... 03/01/07 - 20070048632 - Photomask and method for exposing chip pattern A photomask includes a main mask pattern having first chip patterns and having a first size corresponding to a maximum exposure area of a projection exposure apparatus. The mask further includes a sub-mask pattern having second chip patterns different from the first chip patterns, having a second size smaller than ... 03/01/07 - 20070048631 - Mask defect repairing method and semiconductor device manufacturing method According to an aspect of the invention, there is provided a mask defect repairing method of repairing a defect caused by a foreign object on a light transmissive photomask, the method including moving the foreign object on a light transmission section of the light transmissive photomask using a manipulator, and ... 03/01/07 - 20070048630 - Methods of forming capacitors The invention includes methods of forming reticles configured for imprint lithography, methods of forming capacitor container openings, and methods in which capacitor container openings are incorporated into DRAM arrays. An exemplary method of forming a reticle includes formation of a radiation-imageable layer over a material. A lattice pattern is then ... 03/01/07 - 20070048629 - Overlay target for polarized light lithography A target and method for use in polarized light lithography. A preferred embodiment comprises a first structure located on a reference layer, wherein the first structure is visible through a second layer, and a second structure located on the second layer, wherein the second structure is formed from a photomask ... 03/01/07 - 20070048628 - Plasmonic array for maskless lithography In various embodiments, a photolithography system comprises a spatial light modulator and a plasmonic lens array. The spatial light modulator comprises a plurality of pixels, and the plasmonic lens array comprises a plurality of plasmonic lenses. The pixels are optically aligned with the plasmonic lenses such that light from the ... 03/01/07 - 20070048627 - Systems and methods for implementing and manufacturing reticles for use in photolithography tools Methods, systems, and tool sets involving reticles and photolithography processing. Several embodiments of the invention are directed toward obtaining qualitative data from within the pattern area of a reticle that is indicative of the physical characteristics of the pattern area. Additional embodiments of the invention are directed toward obtaining qualitative ... 03/01/07 - 20070048626 - Device manufacturing method, mask and device A method for use in manufacturing CCD or CMOS image sensors in which a substrate covered in a layer of colored radiation sensitive material has a patterned beam of radiation projected onto it. The patterned beam of radiation includes a pattern for forming device features in areas of a product ... 03/01/07 - 20070048625 - Lithographic template and method of formation and use A lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template is provided. The lithographic template (10) and the method of making comprises forming a transparent conductive layer (16) over a substrate (12). A SiCN layer (18) is formed over the ... 02/22/07 - 20070042277 - Method and apparatus for performing model-based layout conversion for use with dipole illumination A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the ... 02/22/07 - 20070042276 - Lithography apparatus and method for using the same The lithography apparatus includes a dummy photomask comprising a substrate having a photomask pattern and a photomask. The photomask being detachable/attachable from the photomask is attached to a photomask so as to adjust field CD uniformity of the photomask. ... 02/15/07 - 20070037074 - Use of alternative polymer materials for soft polymer pellicles Disclosed are pellicle compositions and methods of making such pellicle compositions. The pellicle compositions provided include highly fluorinated polymers as well as fluorinated polymer/PVDF co-polymers. ... 02/15/07 - 20070037073 - Process for manufacturing half-tone phase shifting mask blanks For efficiently manufacturing half-tone phase shifting mask blanks having uniform product qualities, which enables the prevention of optical property variations when the blanks are mass-produced, there is provided a process for manufacturing half-tone phase shifting mask blanks each having a phase shifting film containing at least one half-tone film on ... 02/15/07 - 20070037072 - Levenson type phase shift mask and manufacturing method thereof A Levenson type phase shift mask has a light shielding portion and openings formed on a transparent substrate. The transparent substrate at the openings is partially dug in or a transparent film is partially disposed on the transparent substrate at the openings to form shifter openings and non-shifter openings. The ... 02/15/07 - 20070037071 - Method for removing defect material of a lithography mask The present invention relates to a method for removing defect material in a transmissive region of a lithography mask having transmissive carrier material and absorber material. A first method step involves removing defective material and absorber material in a processing region. A second method step involves applying an absorbent material ... 02/15/07 - 20070037070 - Light exposure mask and method for manufacturing semiconductor device using the same The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using ... 02/15/07 - 20070037069 - Exposure mask Accordingly, a resist having regions with different thicknesses and having gentle shape in an edge can be formed. By performing a process such as etching with this resist, regions having different thicknesses can be formed in a self-aligned manner. ... 02/15/07 - 20070037068 - Barrier coating compositions for photoresist and methods of forming photoresist patterns using the same Provided are barrier polymers, barrier coating compositions incorporating such polymers and methods for utilizing such barrier coating compositions for suppressing dissolution of photoresist components during immersion photolithography. The barrier polymers may be synthesized from one or more monomers including at least one monomer having a tris(trimethylsiloxy)silyl group and will have ... 02/15/07 - 20070037067 - Optical pellicle with a filter and a vent The present invention provides an optical pellicle frame that includes an exterior surface and an interior surface, at least one vent extending through the frame from the exterior surface to the interior surface, and a filter, wherein the filter is located within the vent and is at least three times ... 02/15/07 - 20070037066 - Method for correcting and configuring optical mask pattern A method of correcting a mask pattern is described. A testing mask including a plurality of original patterns configured according to an original drawing data is provided. The original patterns in the testing mask are transferred to a photo-resistant layer to form a plurality of first post-development patterns and measure ... 02/08/07 - 20070031741 - Euvl reflection device, method of fabricating the same, and mask, projection optics system and euvl apparatus using the euvl reflection device A reflection device that may include a substrate and a multi-reflection layer formed on the substrate. The multi-reflection layer may be formed of a material capable of reflecting EUV rays. The multi-reflection layer may be formed by stacking a plurality of layer groups, each including a first material layer, a ... 02/08/07 - 20070031740 - Method, program product and apparatus for performing mask feature pitch decomposition for use in a multiple exposure process A method for forming exposure masks for imaging a target pattern having features to be imaged on a substrate in a multi-exposure process. The method includes the steps of generating a set of decomposition rules defining whether a given feature of the target pattern is assigned to a first exposure ... 02/08/07 - 20070031739 - Test mask for optical and electron optical systems. A test mask 1 for microscopy is disclosed, which is formed on a substrate of quartz. The test mask 1 comprises a multiplicity of sub-masks 4, which are implemented such that each sub-mask 4 comprises structures which differ within a sub-mask 4 with regard to form and size. In addition, ... 02/08/07 - 20070031738 - Method and system for printing lithographic images with multiple exposures System and method is disclosed for breaking a design to be printed into two or more exposures, each of which has at least the minimum pitch. Together, these multiple exposures print a design that could not be printed in one exposure alone. ... 02/08/07 - 20070031737 - Lithography masks and methods Lithography masks and methods of lithography for manufacturing semiconductor devices are disclosed. Forbidden pitches are circumvented by dividing a main feature into a set of two or more sub-features. The sum of the widths of the sub-features and the spaces between the sub-features is substantially equal to the width of ... 02/08/07 - 20070031736 - Method and apparatus for compensating for the effects of gravity on pellicle used for protecting a reticle from contamination A pellicle membrane (1) is connected to a frame (3), substantially parallel to a reticle base plate (5), so as to define an enclosure with a space (9) between the reticle carried on the base plate (5) and the pellicle membrane (1). A mask (6) is provided on the reticle ... 02/01/07 - 20070026323 - Mask with minimum reflectivity over absorber layer A reflective mask may include an anti-reflective (AR) coating on an absorber layer to improve inspection contrast in an inspection system using deep ultraviolet (DUV) light. A silicon nitride (Si3N4) AR coating may be used on a chromium (Cr) or tantalum nitride (TaN) absorber layer. ... 02/01/07 - 20070026322 - Integration system and the method for operating the same A mixing-and-matching method for an optical environment group. The optical environment group has at least a primary optical environment having a first numerical aperture (NA) and a first off-axis illumination (OAI) mode and at least one backup optical environment having a second NA and a second OAI mode. The method ... 02/01/07 - 20070026321 - Cluster tool and method for process integration in manufacturing of a photomask A method and apparatus for process integration in manufacture of a photomask are disclosed. In one embodiment, a cluster tool suitable for process integration in manufacture of a photomask including a vacuum transfer chamber having coupled thereto at least one hard mask deposition chamber and at least one plasma chamber ... 02/01/07 - 20070026320 - Phase shift photomask performance assurance method A method for inspecting a phase shift photomask employs a phase shift photomask having an active pattern region. An optical property of the phase shift photomask is measured within the active pattern region, rather than, for example, a non-active pattern border region. By making the measurement within the active pattern ... 01/25/07 - 20070020536 - Laser beam pattern mask and crystallization method using the same A laser beam pattern mask includes at least one or more transmitting parts, each transmitting part having a central portion and a pair of edge portions provided to both sides of the central portion, each having a substantially triangular shape defined by a virtual boundary line between the central portion ... 01/25/07 - 20070020535 - Method of forming a pattern using a polarized reticle in conjuction with polarized light Polarized reticles, photolithography systems utilizing a polarized reticle, and methods of using such a system are disclosed. A polarized reticle is formed having a reticle containing at least one first patterned region at least partially surrounded by at least one second patterned region. The first patterned region of the polarized ... 01/25/07 - 20070020534 - Photomask blank, photomask and fabrication method thereof A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding ... 01/25/07 - 20070020533 - Method of manufacturing rim type of photomask and photomask made by such method A method of forming a rim type of photomask prevents a chrome pattern formed in the 0°-phase shift region of the mask substrate from being irregular and hence, ensures that the border of the 0°-phase shift region has a uniform width. First, a light blocking layer is formed on a ... 01/25/07 - 20070020532 - Method for designing photomask The present invention provides a method for designing a mask. First, a main pattern including at least a strip pattern is formed on the mask substrate. A shift feature is added to one end of the strip pattern of the main pattern. Either the phase shift or the optical transmission ... 01/25/07 - 20070020531 - Phase shift mask for patterning ultra-small hole features A phase shift mask includes a light transparent substrate; an opaque material layer coated on the main surface of the light transparent substrate, wherein the opaque material layer has an window opening exposing a light transparent area of the light transparent substrate; a cruciform first phase shifting region of the ... 01/18/07 - 20070015069 - Crystallization mask, crystallization method, and method of manufacturing thin film transistor including crystallized semiconductor A crystallization mask for laser illumination for converting amorphous silicon into polysilicon is provided, which includes: a plurality of transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area. ... 01/18/07 - 20070015068 - Method for producing transmissive screen, apparatus for producing transmissive screen, and transmissive screen A method for producing a transmissive screen which includes a lens sheet having a lens formed on one side and a light shielding layer formed on the other side, the light shielding layer having openings formed in regions at which light is condensed by the lens is provided. The method ... 01/18/07 - 20070015067 - Filter exposure apparatus, and device manufacturing method A filter used for an exposure apparatus that exposes a plate using a light from a light source includes a light transmitting film configured to transmit the light from the light source, a first rod member that includes plural first rod members, and thermally contacts the light transmitting film, the ... 01/18/07 - 20070015066 - Mask for sequential lateral solidification (sls) process and a method for crystallizing amorphous silicon by using the same A mask for sequential lateral solidification (SLS) processes including at least one first window, one second window, one third window, and one fourth window is provided. Each window has a length extending longitude on the mask. The second window is aligned to the first window. The width of the first ... 01/18/07 - 20070015065 - Euv exposure mask blanks and their fabrication process, and euv exposure mask The invention provides a mask blank for EUV exposure wherein a substrate is provided at its flank with an electrically conductive film unlikely to peel off in EUV exposure mask fabrication process steps, etc. and its fabrication process, and provide a mask for EUV exposure which is readily attachable to ... 01/18/07 - 20070015064 - Cr-capped chromeless phase lithography A photolithographic mask is adapted for use in imparting a pattern to a substrate. The pattern comprises a plurality of features. At least one of the plurality of features (201) is implemented in the mask as a phase shifting structure (205) with a unitary layer of opaque material (207) disposed ... 01/11/07 - 20070009812 - Low-expansion glass substrate for a reflective mask and reflective mask A low-expansion glass substrate for a reflective mask, wherein the glass substrate is suited for a base material of a reflective mask employed in a lithographic process in semiconductor fabrication, comprises a lateral surface, a chamfered portion and a notched portion formed along an outer periphery thereof, at least one ... 01/11/07 - 20070009811 - Mask pattern inspection method, exposure condition verification method, and manufacturing method of semiconductor device A mask pattern inspection method includes: transferring a mask pattern onto a conductor substrate or a semiconductor substrate; preparing a sample including a substrate surface pattern in an electrically conductive state to the substrate, the substrate surface pattern being constituted of a convex pattern or a concave pattern each having ... 01/11/07 - 20070009810 - Phase shifter film and process for the same In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide based phase shifter film is formed. Thereby, ... 01/11/07 - 20070009809 - Synthetic nanoparticle soil materials The present invention relates to synthetic nanoparticle soil materials that comprises about 0.5% to about 20% metal powder by mass, and about 0.5% to about 30% mineral powder by mass, mixed together with quartz-rich sand and a polymorph mineral of aluminum silicate, creating a sand mixture that may be mixed ... 01/11/07 - 20070009808 - Systems, masks, and methods for manufacturable masks Photomask patterns are represented using contours defined by mask functions or other formats. Given target pattern, contours may be optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimized patterns or blocks may be simplified for mask manufacturing. ... 01/04/07 - 20070003844 - Method for adjusting dimensions of photomask features A method for adjusting one or more dimensions of a photomask subsequent to etching of a defective pattern in the chrome-containing layer thereof is provided. The method includes subjecting the chrome-containing layer of a photomask to a wet etch process utilizing a solution comprising deionized water and ozone. The length ... 01/04/07 - 20070003843 - Defect inspection method for a glass substrate for a mask blank, glass substrate for a mask blank, mask blank, exposure mask, method of producing a glass substrate for a mask blank, method of producing a mask blank, and method of producing an exposure mas On inspecting a glass substrate for a mask blank which substrate has surfaces including one end face, the glass substrate is prepared to have the one end face which has a chamfered surface and a remaining surface serving as a side surface. The chamfered surface of the one end face ... 01/04/07 - 20070003842 - Software sequencer to dynamically adjust wafer transfer decision A method of operating a track lithography tool. The track lithography tool is adapted to process a plurality of substrates according to a recipe, the recipe including a plurality of process steps and a plurality of transfer steps. The method includes determining a process time associated with a time critical ... 01/04/07 - 20070003841 - Double exposure method and photomask for same A double exposure method forms first and second patterns on a cell region and a peripheral circuit region of a wafer, respectively. The method comprises performing a primary exposure through two-beam imaging of 0 order light and −1 order light or +1 order light using a photomask to form the ... 01/04/07 - 20070003840 - Focus determination method, device manufacturing method, and mask One or more focus settings for use in a device manufacturing method is determined by printing a plurality of target markers at different focus settings and using a scatterometer, e.g. off-line, to measure a property of the target markers that is indicative of focus. ... 01/04/07 - 20070003839 - $m(c)method for producing inclined flank patterns by photolithography The invention concerns a photolithography fabrication method enabling production of patterns in a photosensitive resin layer (601) placed on a substrate (600). The patterns (607) comprise flanks (608) inclined relative to a normal ({right arrow over (n)}) relative to the principal plane of the substrate and which have an angle ... 12/28/06 - 20060292460 - Exposure method, exposure quantity calculating system using the exposure method and semiconductor device manufacturing method using the exposure method An exposure method is disclosed, which comprises preparing a first mask in which a size of a mask pattern is measured in advance, calculating a first exposure quantity to be applied to the first mask to provide a first resist pattern by using the first mask, simulating optical intensity distributions ... 12/28/06 - 20060292459 - Euv reflection mask and method for producing it An EUV mask having elevated sections and trenches lying in between is disclosed. In one embodiment, the mask includes at least a substrate layer having a very low coefficient of thermal expansion, a multilayer, and a capping layer. The elevated sections of the EUV mask are arranged on a continuous ... 12/28/06 - 20060292458 - Method of creating photo mask data, method of photo mask manufacturing, and method of manufacturing semiconductor device A method of creating photo mask data includes preparing design data of a photo mask, generating drawing data of the photo mask by using the design data, generating inspection control information configured to control inspection of defect on the photo mask by using the drawing data, and generating drawing and ... 12/28/06 - 20060292457 - System for electrically connecting a mask to earth, a mask A reticle includes an area provided with a conductive metal-based compound coating for electrically grounding the reticle. The reticle is suitable for use with a lithography apparatus whereby the reticle pattern is imaged using extreme ultra violet radiation. One or more conducting pins, held at zero potential, may be pressed ... 12/28/06 - 20060292456 - Reticle constructions, and methods for photo-processing photo-imageable material The invention includes methods for photo-processing photo-imageable material. Locations of the photo-imageable material where flare hot spots are expected to occur are ascertained. A substantially uniform dose of light intensity is provided to at least the majority of the photo-imageable material other than the hot spot locations, and is not ... 12/28/06 - 20060292455 - Method for checking phase shift angle of phase shift mask, lithography process and phase shift mask A method for checking a phase shift angle of a PSM is described. A calibration curve of a characteristic value of lithography performance with respect to the phase shift angle of a type of PSM is acquired. The patterns of a PSM of the type to be checked are transferred ... 12/28/06 - 20060292454 - Method of producing phase shift masks A light-shielding film pattern 2a having a main opening 5 and auxiliary openings 6 is formed in a first process and, then, recess etching of a transparent substrate (formation of a substrate etched portion 8) is performed in a second process. Thus, the main opening and auxiliary openings can be ... 12/21/06 - 20060286461 - Micro lens array and method of manufacturing the same A micro lens array and method of fabricating the micro lens array. The micro lens array includes: a substrate; a plurality of holes penetrating the substrate; and a plurality of lens units on a first surface of the substrate, each lens being at a respective one of the plurality of ... 12/21/06 - 20060286460 - Photomask, method of making a photomask and photolithography method and system using the same A photomask according to the invention provides selective regional optimization of illumination type according to the type of image being formed using the photomask. The photomask include a light polarizing structure which polarizes the light incident on the polarizing structure. Light of a first illumination type from a source in ... 12/14/06 - 20060281018 - Light modulation device A first reflecting body, which has semi-transmissive semi-reflective characteristics, a light transmissive fine hole body having a plurality of fine holes, which are adapted to be filled with a light transmissive substance and have diameters sufficiently smaller than wavelengths of incident light, and a second reflecting body, which has perfect ... 12/14/06 - 20060281017 - Reflection mask for euv photolithography and method of fabricating the reflection mask A reflection mask for extreme ultraviolet (EUV) photolithography and a method of fabricating the same, in which the reflection mask includes a substrate, a lower reflection layer formed in a multi-layer structure on the substrate and including a material reflecting EUV light, an upper reflection layer formed in a multi-layer ... 12/14/06 - 20060281016 - Modifying sub-resolution assist features according to rule-based and model-based techniques Modifying sub-resolution assist features includes receiving a mask pattern for a photolithographic mask. The mask pattern includes main features, and the photolithographic mask is operable to pattern a wafer pattern for a semiconductor wafer. Placement of sub-resolution assist features for the main features is estimated. The following is repeated for ... 12/14/06 - 20060281015 - Verifying a process margin of a mask pattern using intermediate stage models Verifying a process margin for a mask pattern includes receiving the mask pattern for patterning features on a semiconductor wafer. The mask pattern is modified according to a wafer pattern model operable to estimate a wafer pattern resulting from the mask pattern. An intermediate stage model is selected to apply ... 12/14/06 - 20060281014 - Method and apparatus for protecting a reticle used in chip production from contamination A transparent pellicle member (1), comprising an inner or central portion (1A) and an out peripheral portion (1B) mounted across a reticle for use in semiconductor chip fabrication, substantially parallel thereto and with a space (9) therebetween. The central portion (1A) of the pellicle (1) is fixed with regard to ... 12/07/06 - 20060275675 - Method for determining an optimal absorber stack geometry of a lithographic reflection mask The present invention relates to a method for determining an optimal absorber stack geometry of a lithographic reflection mask comprising a reflection layer and a patterned absorber stack provided on the reflection layer, the absorber stack having a buffer layer and an absorber layer. The method is based on simulating ... 12/07/06 - 20060275674 - Apparatus and method for fabricating flat panel display device A method and apparatus for fabricating a flat panel display device is disclosed. A thin film is patterned in a patterning process using a soft mold without using a photo process. A thin film layer and a resist are sequentially formed on a substrate. A designated resist pattern is formed ... 12/07/06 - 20060275673 - Phase shifter for laser annealing An object of the present invention is to provide a phase shifter for laser annealing which is capable of effectively preventing the sticking of particles. A first layer and a third layer are made of quartz glass, and a two-dimensional pattern of fine grooves is formed in the surfaces of ... 12/07/06 - 20060275672 - Photomask with controllable patterns A photomask with controllable patterns is a panel, which can be controlled to change the shading patterns. The panel is composed of a plurality of optical controlled elements and has various portions of transparent, gray-scale or opaque patterns by controlling the optical controlled elements. When light passes through the photomask, ... 11/30/06 - 20060269853 - Method to recover the exposure sensitivity of chemically amplified resins from post coat delay effect Methods of fabricating a photomask, methods of treating a chemically amplified resist-coated photomask blank, a photomask blank resulting from the methods, and systems for fabricating a photomask are provided. The method is useful for recovering the exposure sensitivity of a chemically amplified resist disposed on a photomask blank from a ... 11/30/06 - 20060269852 - Method to recover the exposure sensitivity of chemically amplified resins from post coat delay effect Methods of fabricating a photomask, methods of treating a chemically amplified resist-coated photomask blank, a photomask blank resulting from the methods, and systems for fabricating a photomask are provided. The method is useful for recovering the exposure sensitivity of a chemically amplified resist disposed on a photomask blank from a ... 11/30/06 - 20060269851 - Photomask and method for conveying information associated with a photomask substrate A method for conveying information about a photomask substrate is disclosed. The method includes heating an area of a photomask substrate located between a top surface and a bottom surface of the photomask substrate with a laser. The heat applied to the area of the substrate forms a mark inside ... 11/30/06 - 20060269850 - Mask, method of producing the same, and method of producing semiconductor device To provide a mask able to reduce the thickness of a membrane and maintain the mask strength and a method of producing a semiconductor device able to form a fine pattern with a high accuracy and a method of producing the mask. A mask comprising a thin film, holes formed ... 11/30/06 - 20060269849 - Halftone mask and method of fabricating the same, and method of fabricating display device using the same A halftone mask includes a shielding pattern partially formed on a transparent substrate; a first halftone transmission pattern partially formed on the transparent substrate; and a second halftone transmission pattern formed on the first halftone transmission layer. ... 11/30/06 - 20060269848 - Exposure mask and method of manufacturing the same, and semiconductor device manufacturing method An exposure mask 24, includes a quartz (transparent) substrate 20, a film 21 formed on the quartz substrate 20, a rectangular main feature 21a formed in the film 21, a first assist feature 21b formed in the film 21 away from the main feature 21a and having a size that ... 11/30/06 - 20060269847 - Nonaqueous electrolytic solution for electrochemicals cells An apparatus and method for attaching a pellicle to a mask for use in optical lithography comprises a lithographic mask; a pellicle ring; and a binding layer having a thickness of less than 100 nanometers between the pellicle ring and the lithographic mask. The binding layer comprises a graded oxide ... 11/23/06 - 20060263704 - Semiconductor device manufacturing method and semiconductor manufacturing apparatus A method of manufacturing a semiconductor device is disclosed, which comprises setting a stencil mask above a substrate to be processed in confronting to the substrate, the stencil mask having an opening, and irradiating the substrate with charged particles through the opening of the stencil mask, while adjusting a potential ... 11/23/06 - 20060263703 - Pellicle assembly including a molecular sieve A photomask assembly and method for protecting the photomask assembly from contaminants generated during a lithography process are disclosed. A photomask assembly includes a pellicle assembly formed from a pellicle frame and a pellicle film coupled to a first surface of the pellicle frame. The pellicle frame further includes an ... 11/23/06 - 20060263702 - Composition for forming intermediate layer containing sylylphenylene-based polymer and pattern-forming method wherein, at least one of R1 and R2 is a cross-linking group, m and n are each an integer from 0 to 20, and 1 is an integer representing the number of repetitive units; and a solvent (C). ... 11/23/06 - 20060263701 - Levenson phase shifting mask and method for preparing the same and method for preparing a semiconductor device using the same The present method for preparing a Levenson phase shifting mask first forms a metal layer on a substrate, and an etching process is performed to form a plurality of openings in the metal layer. A spin-coating process is performed to form a polymer layer on the substrate, an electron beam ... 11/23/06 - 20060263700 - Photo mask used for fabricating semiconductor device Disclosed is a photo mask used for fabricating a semiconductor device, capable of ensuring a process margin for a photo process in a pattern region where it is difficult to use an assist feature. The photo mask includes a line/space pattern part for forming a line/space pattern on a wafer. ... 11/23/06 - 20060263699 - Methods for forming arrays of a small, closely spaced features Methods of forming arrays of small, densely spaced holes or pillars for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form sumperimposed, ... 11/23/06 - 20060263698 - Apparatus and method of making a grayscale photo mask and an optical grayscale element An apparatus and method for making a grayscale photo mask and a three-dimensional grayscale diffractive optical element operate as follows. A grayscale photo mask is obtained by exposing a laser direct write (LDW) glass material to laser beam radiation from a first laser beam of modulated power moved over a ... 11/16/06 - 20060257758 - Methods of eliminating pattern collapse on photoresist patterns A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing ... 11/16/06 - 20060257757 - Methods for converting reticle configurations The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to ... 11/16/06 - 20060257756 - Method for repairing a photomask, method for inspecting a photomask, method for manufacturing a photomask, and method for manufacturing a semiconductor device A method for inspecting a photomask, comprising generating a laser beam, changing a phase of the laser beam to smooth the brightness distribution of the laser beam, applying the smoothed laser beam to the photomask, acquiring an image of the photomask using a sensor while the laser beam and the ... 11/16/06 - 20060257755 - Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof On a substrate that is transparent to exposure light, a phase-shift multilayer film including a stack of two layers of a metal silicide compound is formed. A stabilized oxide layer is formed on the surface of the metal silicide compound layer close to the top surface. The layer close to ... 11/16/06 - 20060257754 - Pellicles having low adhesive residue The present invention provides a pellicle, wherein a peel strength is from 0.004 N/mm to 0.10 N/mm when a non-surface-treated polyethylene terephthalate film having a thickness of 125 μm is peeled in a direction of 180 degrees at a temperature of 23° C. after the polyethylene terephthalate film has been ... 11/16/06 - 20060257753 - Photomask and method thereof A photomask and method thereof. In an example method, a photomask may be manufactured by forming an oxide layer on a surface, patterning the oxide layer to form an oxide pattern, the oxide pattern including a plurality of oxide pattern bodies and a plurality of oxide windows, filling the plurality ... 11/16/06 - 20060257752 - Phase shift mask for preventing haze Disclosed is a phase shift mask. Residual ions, which are considered a factor of occurrence of haze which is a growth defect of a surface of a photomask during a photolithography step of a wafer process, are controlled in order to change the content of a surface of the phase ... 11/16/06 - 20060257751 - Photo mask and method to form a self-assembled monolayer and an inorganic ultra thin film on the photo mask A SAM is formed on a photo mask by providing the photo mask, preparing a solution of a reactant in a suitable solvent, and applying the solution of the reactant to the surface of the photo mask to form an organic SAM. The photo mask has a transparent substrate and ... 11/16/06 - 20060257750 - Reticle alignment and overlay for multiple reticle process A method for generating a plurality of reticle layouts is provided. A feature layout with a feature layout pitch is received. A plurality of reticle layouts is generated from the feature layout where each reticle layout of the plurality of reticle layouts has a reticle layout pitch and where each ... 11/16/06 - 20060257749 - Method for reducing critical dimension A method for reducing critical dimension is provided. An exposure process and a develop process are performed on a photoresist layer. An optical trim exposure process is performed between the exposure process and the development process or before the exposure process. The optical trim expsoure process is performed to expose ... 11/09/06 - 20060251974 - Reticles The invention includes reticles and methods of forming reticles. In one aspect, a reticle can include a quartz-containing substrate, an attenuating layer, and an antireflective structure between the attenuating layer and the quartz-containing substrate. The invention can also include a reticle having a relatively transparent region between first and second ... 11/09/06 - 20060251973 - Reflective-type mask blank for euv lithography and method for producing the same A reflective-type mask blank for EUV lithography for reducing the EUV ray reflectance at the absorbing layer and a method for producing the mask blank are presented. A reflective-type mask blank for EUV lithography comprising a substrate and a reflective layer for reflecting EUV light and an absorbing layer for ... 11/09/06 - 20060251972 - Flexible photomask for photolithography, method of manufacturing the same, and micropatterning method using the same Provided are a flexible photomask for photolithography, a method of manufacturing the same, and a patterning method using the same. The flexible photomask is made of a light-transmissive elastomer and has a patterned surface. ... 11/09/06 - 20060251971 - Photo-mask with variable transmission by ion implantation Some embodiments of the present invention include photo-masks with variable transmission by ion implantation. ... 11/02/06 - 20060246363 - Photomask substrate made of synthetic quartz glass and photomask A photomask substrate made of a synthetic quartz glass to be used for production of a semiconductor employing a light source having an exposure wavelength of at most about 200 nm, which has a birefringence of at most 1 nm/6.35 mm at the exposure wavelength, and of which the amount ... 11/02/06 - 20060246362 - Mask data creation method A method of creating data of a mask for manufacturing a semiconductor device. The mask includes at least one auxiliary pattern arranged adjacent to a line pattern. An auxiliary pattern is allocated in accordance with a rule-based method on the basis of an interval between a first line pattern and ... 11/02/06 - 20060246361 - Mask blank glass substrate manufacturing method, mask blank manufacturing method, mask manufacturing method, mask blank glass substrate, mask blank, and mask A method of manufacturing a mask blank glass substrate includes a marking step of irradiating laser light onto a mirror-like surface in an area, having no influence on transfer, on a surface of the mask blank glass substrate to thereby form a pit that is used as a marker for ... 11/02/06 - 20060246360 - Flat panel display device with thin film transistors and method of making thereof A thin film transistor, a flat panel display device, and a method of fabricating thereof are disclosed. The flat panel display device includes a substrate, a display array formed over the substrate, and a transistor formed over the substrate. The transistor has a semiconductor layer. The flat panel display device ... 11/02/06 - 20060246359 - Semiconductor device, fabricating method thereof, and photomask There is provided a semiconductor device including a wafer and a focus monitoring pattern formed on the wafer. The focus monitoring pattern having at least one pair of first and second patterns, and the first pattern has an unexposed region surrounded by an exposed region, and the second pattern has ... 11/02/06 - 20060246358 - Device and method to treat blood vessels in the eye A device and method to treat blood vessels in the eye is shown. Advantages of devices and methods shown include reduced beam exposure of healthy tissue during a treatment procedure. Another advantage includes the ability to modify beam exposure to individual patient needs. Another advantage includes the ability to utilize ... 11/02/06 - 20060246357 - System and method for manufacturing a mask for semiconductor processing The present disclosure provides a system and method for manufacturing a mask for semiconductor processing. In one example, the system includes at least one exposure unit configured to select a recipe for a later baking process in a post treatment unit, a buffer unit coupled to the exposure unit and ... 10/26/06 - 20060240342 - Resolution enhancing technology using phase assignment bridges In one embodiment, a spacing is determined for each edge of a number of features in a photolithographic design. The edges have at least a partially predictable layout. Based on the spacing and the predictable layout, a bridge structure is generated. Each bridge of the bridge structure connects one of ... 10/26/06 - 20060240341 - Mask, manufacturing method for mask, and manufacturing method for semiconductor device Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding ... 10/26/06 - 20060240340 - Prevention of photoresist scumming A photo acid generator (PAG) or an acid is used to reduce resist scumming and footing. Diffusion of acid from photoresist into neighbors causes a decreased acid level, and thus causes resist scumming. An increased acid layer beneath the resist prevents acid diffusion. In one embodiment, the increased acid layer ... 10/26/06 - 20060240339 - Forming an euv mask with a phase-shifter layer and an intensity balancer layer The present invention describes a method including: providing a substrate, the substrate including a first region and a second region; forming a multilayer mirror over the substrate; forming a phase-shifter layer over the multilayer mirror; forming a capping layer over the phase-shifter layer; removing the capping layer and the phase-shifter ... 10/26/06 - 20060240338 - Pattern formation method, electronic circuit manufactured by the same, and electronic device using the same There are a step for forming a mask layer 2 on a substrate 1; a step for forming an opening pattern in the mask layer 2; a step for forming a thin film 3 on the substrate 1 and on the mask layer 2; and a step for removing, from ... 10/26/06 - 20060240337 - Method of exposure and attenuated type phase shift mask A method of exposing a surface to be exposed and an attenuated type phase shift mask for use in the method are provided herein. The attenuated type phase shift mask has a reference area allowing a light radiated from a light source to pass through and an amplitude and phase ... 10/26/06 - 20060240336 - Systems and methods for mitigating variances on a patterned wafer using a prediction model Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle ... 10/26/06 - 20060240335 - Mask blank and process for producing and process for using the same, and mask and process for producing and process for using the same By applying a transparent electroconductive film to a mask blank or by forming an electroconductive layer by doping metallic ions thereto, such a mask blank can be provided that an electrostatic chuck having a sufficient retaining force can be applied, the front and back surfaces of the mask blank can ... 10/26/06 - 20060240334 - Method of manufacturing euvl alternating phase-shift mask A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in ... 10/26/06 - 20060240333 - Phase-shifting mask for equal line/space dense line patterns A phase-shifting mask suited for equal line/space, small pitched, dense line pattern is disclosed. The phase-shifting mask includes a transparent substrate, a partially shielded mesa line pattern of first phase formed on the substrate, and a 100% clear recessed line pattern of second phase etched into the substrate and is ... 10/26/06 - 20060240332 - Chromeless phase-shifting mask for equal line/space dense line patterns A phase-shifting mask suited for equal line/space, small pitched, dense line pattern is disclosed. The phase-shifting mask includes a transparent substrate, a partially shielded mesa line pattern of first phase formed on the substrate, and a clear recessed line pattern of second phase etched into the substrate and is disposed ... 10/26/06 - 20060240331 - Modifying merged sub-resolution assist features of a photolithographic mask Modifying merged sub-resolution assist features includes receiving a mask pattern comprising the merged sub-resolution assist features, where a segmenting sub-resolution assist feature intersects a segmented sub-resolution assist feature at an intersection. Each sub-resolution assist feature is represented by an axis of the sub-resolution assist feature. The length of at least ... 10/26/06 - 20060240330 - Exposure method, mask, semiconductor device manufacturing method, and semiconductor device To provide an exposure method and mask capable of suppressing a fluctuation of a dimension of a resist pattern caused by a flexure of a membrane and a semiconductor device formed with a fine pattern in high accuracy and a method of producing the same. The exposure method placing an ... 10/19/06 - 20060234142 - Methods of forming reticles The invention includes reticle constructions and methods of forming reticle constructions. In a particular aspect, a method of forming a reticle includes provision of a reticle substrate having a defined main-field region and a defined boundary region. The substrate has a relatively transparent base and a relatively opaque material over ... 10/19/06 - 20060234141 - Single trench repair method with etched quartz for attenuated phase shifting mask In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the ... 10/19/06 - 20060234140 - Method and device for checking lithography data Devices and methods are provided that include advantages such as the ability to identify sizes, shapes and locations of frequently unwanted additional features that occur as a result of photolithographic interference. The additional feature information is obtained through use of simulation methods with reduced processing time or solving a system ... 10/19/06 - 20060234139 - Systems and methods for modifying a reticle's optical properties Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property ... 10/19/06 - 20060234138 - Hard mask arrangement An interconnect connection structure having first and second interconnects and multiple connection elements that electrically connect the first interconnect to the second interconnect is described. The multiple connection elements are formed laterally in a lateral region of the first and second interconnects relative to an overlay orientation of the interconnects. ... 10/19/06 - 20060234137 - Photomask structures providing improved photolithographic process windows and methods of manufacturing same Photolithographic methods for semiconductor manufacturing are provided wherein photomask structures are designed to provide increased lithographic process windows for printing sub-wavelength features. In one aspect, a photomask includes a mask substrate transparent to exposure light of a given wavelength, and a mask pattern formed on a surface of the substrate. ... 10/19/06 - 20060234136 - Systems and methods for detecting focus variation in photolithograph process using test features printed from photomask test pattern images Systems and methods are provided for detecting focus variation in a lithographic process using photomasks having test patterns adapted to print test features with critical dimensions that can be measured and analyzed to determine magnitude and direction of defocus from a best focus position of an exposure tool during the ... 10/19/06 - 20060234135 - Method for repairing mask-blank defects using repair-zone compensation A method for repairing mask-blank defects uses repair-zone compensation. Local disturbances are compensated over the post-defect-repair repair-zone by altering a portion of the absorber pattern on the surface of the mask blank. This enables the fabrication of defect-free (since repaired) X-ray Mo—Si multilayer mirrors. Repairing Mo—Si multilayer-film defects on mask ... 10/19/06 - 20060234134 - Radiation stability of polymer pellicles An embodiment of the present invention includes a technique to improve stability of a pellicle. The pellicle is pre-baked at a predetermined temperature substantially below a glass transition temperature. The pre-baked pellicle is purged with an inert gas. The purged pellicle is radiated by a radiation at a wavelength. In ... 10/12/06 - 20060228636 - Pattern layout for forming integrated circuit A pattern layout for forming an integrated circuit includes a first device pattern, a second device pattern, and an auxiliary pattern. The first device pattern includes a line and a space alternately arrayed on a fixed pitch having regular intervals in a first direction. The second device pattern is disposed ... 10/12/06 - 20060228635 - Method and apparatus for fabricating shaped structures and shaped structures including one- , two- or three-dimensional patterns incorporated therein The invention includes a template useful for the fabrication of devices having one, two, or three dimensional geometries. The template can include at least a first patterned surface and a mask integrated into the template for creating an interference pattern when radiation is passed through the mask. The template can ... 10/12/06 - 20060228634 - Beam-induced etch |