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Coating Processes > Direct Application Of Electrical, Magnetic, Wave, Or Particulate Energy > Electromagnetic Or Particulate Radiation Utilized (e.g., Ir, Uv, X-ray, Gamma Ray, Actinic, Microwave, Radio Wave, Atomic Particle; I.e., Alpha Ray, Beta Ray, Electron, Etc.) Electromagnetic Or Particulate Radiation Utilized (e.g., Ir, Uv, X-ray, Gamma Ray, Actinic, Microwave, Radio Wave, Atomic Particle; I.e., Alpha Ray, Beta Ray, Electron, Etc.)Electromagnetic Or Particulate Radiation Utilized (e.g., Ir, Uv, X-ray, Gamma Ray, Actinic, Microwave, Radio Wave, Atomic Particle; I.e., Alpha Ray, Beta Ray, Electron, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/02/06 - 20060246228 - Clear photopolymerizable systems for the preparation of high thickness coatings The present invention relates to clear photopolymerisable systems for the preparation of high thickness coatings, to a procedure for their application and to the solid surfaces coated with them. ... 09/07/06 - 20060198966 - Method for forming a silicon-containing film A method for forming a silicon-containing film on a surface of a substrate is described. In the method, a cyclopentasilane solution is filled in a cell to permit an inner wall surface of the cell and the cyclopentasilane solution to be in contact with each other. Subsequently, UV light is ... 12/29/05 - 20050287309 - Coated article with ion treated underlayer and corresponding method A coated article is provided that may be used as a vehicle windshield, insulating glass (IG) window unit, or the like. Ion beam treatment is performed on a layer(s) of the coating. For example, a silicon nitride layer of a low-E coating may be ion beam treated. It has been ... 12/08/05 - 20050271831 - Surface treating method for substrate A surface treating method for a conductive substrate by using a photo-excitation process, wherein a conducive substrate is placed in a process chamber (1) maintained between 0.001-1 atmospheric pressure, while a negative bias voltage is applied to a substrate (2), ultraviolet having a photo energy of 3-10 eV larger than ... ### FreshPatents.com Support |