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Coating Processes > Direct Application Of Electrical, Magnetic, Wave, Or Particulate Energy > Plasma (e.g., Corona, Glow Discharge, Cold Plasma, Etc.) Plasma (e.g., Corona, Glow Discharge, Cold Plasma, Etc.)Plasma (e.g., Corona, Glow Discharge, Cold Plasma, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.06/07/07 - 20070128375 - Method and device for continuously treating the surface of an elongate object The method and device relate to the continuous surface treatment of the surface of an elongate filamentary object by means of a plasma created by an electric discharge under ambient pressure. The device (100) comprises a tubular body (2) in which there is provided a channel (1) that is at ... 05/24/07 - 20070116891 - Plasma brush apparatus and method An apparatus with a narrow slit chamber generates plasma having non-equilibrium characteristics and a brush-like shape at a temperature near room temperature and at a pressure of about one atmosphere. Plasma gas enters the narrow slit chamber. An external power source provides power to electrodes near the exit that excite ... 05/24/07 - 20070116890 - Method for coating turbine engine components with rhenium alloys using high velocity-low temperature spray process A method of forming a wear-resistant coating on a substrate surface includes the step of cold gas-dynamic spraying a material comprising a rhenium-based composition onto the substrate surface. A metal layer may be formed on the substrate surface prior to the cold gas-dynamic spraying step, and a heat treatment may ... 05/24/07 - 20070116889 - Laser treatment of metal The invention provides a method for processing a ferrous work-piece. The method includes the step of coating a surface of a ferrous work-piece with a predetermined material. The method also includes the step of generating a plasma at the surface with a laser by at least partially vaporizing the predetermined ... 05/24/07 - 20070116888 - Method and system for performing different deposition processes within a single chamber A method, computer readable medium, and system for vapor deposition on a substrate that introduce a first process gas composition to a process space according to a first vapor deposition process, deposit a first film on the substrate, introduce a second process gas composition into a second process space different ... 05/24/07 - 20070116887 - Method and system for performing plasma enhanced atomic layer deposition A method, computer readable medium, and system for vapor deposition on a substrate that introduce a gaseous film precursor to a process space, increase the volume of the process space from a first size to a second size to form an enlarged process space, introduce a reduction gas to the ... 05/17/07 - 20070110919 - Method for producing photocatalytically active polymers For producing photocatalytically active polymer surfaces, a method is indicated by which particles of the photocatalytically active oxidic material are accelerated by a carrier gas, when impacting on the polymer surface, partially penetrate into the polymer and, as a result of their high kinetic energy, form a mechanically firmly adhering ... 05/03/07 - 20070098917 - Plasma boriding method The present invention relates to a method of preparing wear-resistant metallic surfaces. ... 03/29/07 - 20070071908 - Staggered in-situ deposition and etching of a dielectric layer for hdp-cvd A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition ... 03/22/07 - 20070065598 - Plasma processing device A plasma processing device includes at least one process chamber for receiving an article, for example a wafer, that is to be processed using a plasma. The process chamber has a prescribed chamber construction. A flow-influencing apparatus is arranged in the process chamber and set in such a manner that ... 03/22/07 - 20070065597 - Plasma cvd film formation apparatus provided with mask A plasma CVD apparatus for forming a thin film on a wafer having diameter Dw and thickness Tw, includes: a vacuum chamber; a shower plate; a top plate; a top mask portion for covering a top surface peripheral portion of the wafer; and a side mask portion for covering a ... 03/08/07 - 20070054064 - Microwave plasma processing method, microwave plasma processing apparatus, and its plasma head A microwave plasma processing method and, in which a linear plasma is produced by means of a microwave, and an object to be processed is subjected to processing under atmospheric pressure or under a pressure near atmospheric pressure when the object is moved, while a surface of the object is ... 03/01/07 - 20070048456 - Plasma enhanced chemical vapor deposition apparatus and method A substrate processing system includes a deposition chamber and a plurality of tubular electrodes positioned within the deposition chamber defining plasma regions adjacent thereto. ... 03/01/07 - 20070048455 - Thin film forming method A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization ... 02/22/07 - 20070042132 - Method of forming plasma and method of forming a layer using the same A method of forming plasma used in a process of manufacturing a semiconductor device and a method of forming a layer for a semiconductor device using the plasma are disclosed. The plasma forming method includes forming a plasma region in a sealed space by supplying a plasma source gas into ... 02/22/07 - 20070042131 - Non-intrusive plasma monitoring system for arc detection and prevention for blanket cvd films Methods and systems of diagnosing an arcing problem in a semiconductor wafer processing chamber are described. The methods may include coupling a voltage probe to a process-gas distribution faceplate in the processing chamber, and activating an RF power source to generate a plasma between the faceplate and a substrate wafer. ... 02/15/07 - 20070036914 - Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer A transparent conductive layer forming method is disclosed which comprises the steps of introducing a reactive gas to a discharge space, exciting the reactive gas in a plasma state by discharge at atmospheric pressure or at approximately atmospheric pressure, and exposing a substrate to the reactive gas in a plasma ... 02/08/07 - 20070031610 - Method for purifying and producing dense blocks A method for purifying and producing dense uniform blocks of high-melting material such as alumina is provided. The blocks may have a predetermined diameter and form such as a cylindrical shape. A substrate is placed under a plasma torch and alumina particles or other high melting materials are heated and ... 02/08/07 - 20070031609 - Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same A method and apparatus for process integration in manufacture of a photomask are disclosed. In one embodiment, a cluster tool suitable for process integration in manufacture of a photomask including a vacuum transfer chamber having coupled thereto at least one hard mask deposition chamber and at least one plasma chamber ... 02/01/07 - 20070026162 - Operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof An operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof are provided. The present invention reduces the time needed for filling the manufacturing gas into the large volume manufacturing cavity. Therefore, the plasma enhanced atomic layer deposition apparatus can switch the precursors rapidly ... 02/01/07 - 20070026161 - Magnetic mirror plasma source and method using same A magnetic mirror plasma (77) source comprises two surfaces separated by a gap wherein one of the surfaces is a wafer (76) and the other surface is a cathode. The apparatus comprises a cover (72), target (83), shunt (74, 81), non-magnetic stage (75), magnet array (80), bias supply (82), and ... 01/11/07 - 20070009673 - Insulation film and method for manufacturing same A method for forming a low-dielectric-constant thin film includes forming on a substrate placed on a susceptor a thin film having a dielectric constant of 2.7 or higher and a modulus of 5 GPa or less by plasma CVD using an organosilicon gas and an additive gas such as CnH2n+2O ... 12/14/06 - 20060280876 - Method for switching decoupled plasma nitridation processes of different doses A method for switching decoupled plasma nitridation (DPN) processes of different doses, which is able to decrease the switching time, is provided. According to the method, a dummy wafer is inserted into a chamber, a process gas introduced is ignited into plasma, and then a DPN doping process of the ... 11/30/06 - 20060269694 - Plasma processing method A plasma processing method for forming a silicon nitride film is provided. A nitrogen-containing plasma is used to nitride silicon on a surface of a target object in a processing chamber of a plasma processing apparatus. The plasma processing method includes a first step of performing a plasma processing under ... 11/30/06 - 20060269693 - Method to increase tensile stress of silicon nitride films using a post pecvd deposition uv cure High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence ... 11/30/06 - 20060269692 - Method to increase the compressive stress of pecvd silicon nitride films Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive ... 11/30/06 - 20060269691 - Plasma treatment apparatus and plasma treatment method A plasma treatment apparatus includes a susceptor, a silica cover covering a plasma generating area above the susceptor, a chamber housing the susceptor and the silica cover, a gas inlet introducing conditioning gas into the chamber, a plasma generator generating a plasma of the conditioning gas configured to perform conditioning ... 11/30/06 - 20060269690 - Formation technology for nanoparticle films having low dielectric constant A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size ... 11/23/06 - 20060263540 - Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer ... 11/16/06 - 20060257584 - Atomic layer deposition method of depositing an oxide on a substrate The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first ... 11/09/06 - 20060251828 - Plasma film-forming method and plasma film-forming apparatus A plasma-assisted deposition system for carrying out a plasma-assisted deposition method has a processing vessel defining a vacuum chamber and having an open upper end, a dielectric member covering the open upper end of the processing vessel, and a flat antenna member placed on the upper surface of the dielectric ... 10/12/06 - 20060228496 - Plasma uniformity control by gas diffuser curvature Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of ... 10/05/06 - 20060222780 - Method for obtaining nanoparticles The method is intended for obtaining nanosize amorphous particles, which find use in various fields of science and technology; in particular, metallic nanostructures can be regarded as a promising material for creating new sensors and electronic and optoelectronic devices and for developing new types of highly selective solid catalysts. The ... 10/05/06 - 20060222779 - Glow discharge-generated chemical vapor deposition A process for creating plasma polymerized deposition on a substrate using a glow discharge is described. The glow discharge is created between an electrode and a counterelectrode. A mixture of a balance gas and a tetraalkylorthosilicate is flowed through the glow discharge onto a substrate to deposit a coating onto ... 09/28/06 - 20060216433 - Method of stabilizing film quality of low-dielectric constant film A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a silicon-containing hydrocarbon compound source gas, an additive gas, and an inert gas into a space between the upper ... 09/21/06 - 20060210723 - Plasma enhanced atomic layer deposition system and method A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber, and introducing a second process material within the process ... 09/14/06 - 20060204672 - Coated product and method of production thereof A coated product is disclosed consisting of a metallic substrate and a coating of a MAX material type. Furthermore, a method of producing such a coated product is disclosed using vapor deposition technique in a continuous roll to roll process. ... 09/07/06 - 20060198965 - Method and system for coating internal surfaces using reverse-flow cycling A method and system for coating the internal surfaces of a workpiece is presented. A bias voltage is connected to a workpiece, which functions as a cathode. A gas source and a vacuum source are coupled to each opening through a flow control system. The flow control system is capable ... 08/10/06 - 20060177599 - Dual plasma beam sources and method A pair of plasma beam sources are connected across an AC power supply to alternatively produce an ion beam for depositing material on a substrate transported past the ion beams. Each plasma beam source includes a discharge cavity having a first width and a nozzle extending outwardly therefrom to emit ... 08/03/06 - 20060172086 - Method of fabricating a manganese diffusion barrier A method of fabricating a diffusion barrier using a gas cluster ion beam apparatus is disclosed. The method includes generating a metal-organic gas that includes a metal-organic compound that includes an element of cobalt (Co) or cobalt and iron (CoFe). The metal-organic gas is combined with a carrier gas that ... 08/03/06 - 20060172085 - Method and apparatus for chemical plasma processing of plastic container A method of treating plastic containers with a chemical plasma by forming a film by CVD on the plastic containers by generating a glow discharge by feeding a gas for plasma treatment and energy such as microwaves for plasmatization into a plasma-treating chamber, wherein the plastic containers are cooled. This ... 07/27/06 - 20060165913 - Method of reducing number of particals on low-k material layer A method of reducing the number of particles on a low-k material layer is described. The low-k material layer is formed by a plasma enhanced chemical vapor deposition process, wherein a reaction gas, a cleaning gas, a high-frequency power and a low-frequency power are used. The method comprises turning off ... 07/13/06 - 20060153995 - Method for fabricating a dielectric stack Methods for forming dielectric materials on a substrate in a single cluster tool are provided. In one embodiment, the method includes providing a cluster tool having a plurality of deposition chambers, depositing a metal-containing oxide layer on a substrate in a first chamber of the cluster tool, treating the metal-containing ... 07/13/06 - 20060153994 - High-speed diamond growth using a microwave plasma in pulsed mode Method for manufacturing a diamond film of electronic quality at a high rate using a pulsed microwave plasma, in which, in a vacuum chamber, a plasma of finite volume is formed near a substrate by subjecting a gas containing at least hydrogen and carbon to a pulsed discharge, which has ... 07/06/06 - 20060147648 - Method and arrangement for generating an atmospheric pressure glow discharg plasma (apg) Method and arrangement (1) for generating an atmospheric pressure glow plasma APG (7), where in a plurality of electrodes, (4, 5) are arranged defining a discharge space (10) for forming said plasma (7). The electrodes (4,5) are connected to a power supply (8) providing an AC-voltage having a frequency of ... 06/29/06 - 20060141168 - Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film The metal film of the present invention is a dense film of a single crystal that has very low surface roughness and very good crystal orientation because an arithmetic mean roughness of the surface is not larger than 2 nm and a (111) peak intensity of X-ray diffraction is not ... 06/22/06 - 20060134346 - Method of manufacturing heating/cooling coil with nanometer silver coating layer Disclosed herein is a method of manufacturing a heating/cooling coil with a nanometer silver coating layer, in which vacuum deposition of nanometer silver is performed on the surface of a heating/cooling coil, thus preventing corrosion of aluminum, sterilizing heating/cooling gas and fluid, and maintaining high heat conductivity. The method includes ... 06/22/06 - 20060134345 - Systems and methods for depositing material onto microfeature workpieces Systems and methods for depositing materials onto a microfeature workpiece are disclosed herein. In one embodiment, a system includes a first deposition chamber, a gas distributor carried by the first deposition chamber, a second deposition chamber operably coupled to the first deposition chamber, an energy source, and a workpiece support ... 06/15/06 - 20060127601 - Film formation method A titanium silicide film is formed on an Si wafer. At first, a plasma process using an RF is performed on the Si wafer. Then, a Ti-containing source gas is supplied onto the Si wafer processed by the plasma process and plasma is generated to form a Ti film. At ... 06/15/06 - 20060127600 - Film-forming system and film-forming method A film-forming system comprising a vacuum chamber and an electroconductive partition plate dividing said vacuum chamber into a plasma generating space provided with a high-frequency electrode and a film-forming treatment space provided with a substrate-retaining mechanism for holding a substrate mounted thereon. A gas for generating desired active species by ... 06/15/06 - 20060127599 - Process and apparatus for preparing a diamond substance Disclosed in this specification is a process and apparatus for producing a diamond substance. A first mixture comprised of oxygen and a hydrocarbon gas is formed in the first inner nozzle. The first mixture is ignited to produce a flame core. A second mixture comprised of hydrogen and oxygen is ... 06/15/06 - 20060127598 - Method for providing a coating on the surfaces of a product with an open cell structure throughout its structure and use of such a method The invention relates on the one hand to a method for providing a coating on the surfaces of a product with an open cell structure throughout its structure, in which said coating is provided by means of a plasma polymerisation process. The foam has to be prepared for the plasma ... 06/15/06 - 20060127597 - Method for producing containing fullerene and apparatus for producing same A method for producing endohedral fullerenes at a higher yield and an apparatus therefor are disclosed. The apparatus includes a vacuum vessel (1), elements (3, 4) for generating a plasma current (2) of atoms to be contained, elements (8) for introducing fullerenes into the plasma current (2), a holding member ... 06/08/06 - 20060121211 - Chemical vapor deposition apparatus and chemical vapor deposition method using the same chemical vapor deposition (CVD) equipment and a CVD method using the same enhance production yield by preventing non-reacted gas from agglomerating on a substrate before the plasma reaction is induced. This source gas is composed of first and second gases. Only the first gas is initially supplied into the process ... 06/08/06 - 20060121210 - Plasma processing equipment and method of operating the same Plasma process equipment can enhance the plasma activation region during a process of cleaning the interior of the process chamber of the equipment so that polymer can be completely removed from the interior of the process chamber. The plasma processing equipment includes systems to supply a process gas into the ... 05/18/06 - 20060105114 - Multi-layer high quality gate dielectric for low-temperature poly-silicon tfts A method and apparatus that is useful for forming a high quality gate dielectric layer in MOS TFT devices using a high density plasma oxidation (HDPO) process. The HDPO process forms a good interface and then a second layer, which has good bulk electrical properties, is deposited at a higher ... 05/04/06 - 20060093756 - High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric cvd films A method for seasoning a deposition chamber wherein the chamber components and walls are densely coated with a material that does not contain carbon prior to deposition of an organo-silicon material on a substrate. An optional carbon-containing layer may be deposited therebetween. A chamber cleaning method using low energy plasma ... 04/27/06 - 20060088666 - Controlled vapor deposition of biocompatible coatings over surface-treated substrates We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biofunctional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, a siloxane ... 04/13/06 - 20060078690 - Plasma chemical vapor deposition methods A plasma chemical vapor deposition (CVD) method is for depositing a metal layer. In the plasma CVD method, a metal source gas is pre-injected into a chamber containing a substrate, and thereafter a plasma is formed in the chamber to deposit the metal layer on the substrate. ... 03/30/06 - 20060068127 - Nanotransfer and nanoreplication using deterministically grown sacrificial nanotemplates Methods, manufactures, machines and compositions are described for nanotransfer and nanoreplication using deterministically grown sacrificial nanotemplates. A method includes depositing a catalyst particle on a surface of a substrate to define a deterministically located position; growing an aligned elongated nanostructure on the substrate, an end of the aligned elongated nanostructure ... 03/30/06 - 20060068126 - Method for making an aligned carbon nanotube A method for making an aligned carbon nanotube includes the steps of a) applying a layer of a ferrosilicon alloy film onto a substrate, b) etching the layer of the ferrosilicon film to form a plurality of fine ferrosilicon alloy particles that are distributed properly on the substrate, and c) ... 03/30/06 - 20060068125 - Method for producing carbon surface films by plasma exposure of a carbide compound Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a bulk or thin film of a compound, such as titanium carbide. ... 03/23/06 - 20060062931 - Method and device for microwave plasma deposition of a coating on a thermoplastic container surface The invention concerns the deposition of a coating on a thermoplastic container surface (3) using low pressure plasma by excitation of a precursor gas with UHF electromagnetic waves in a circular shaped vacuum cavity (1) receiving the container. It consists in dimensioning the cavity (1) with respect to the frequency ... 03/23/06 - 20060062930 - Plasma-assisted carburizing A system and method of carburizing a surface region of an object includes subjecting a gas to electromagnetic radiation, generated from a radiation source (52), in the presence of a plasma catalyst (70) to initiate a plasma containing carbon. The method also includes exposing the surface region of the object ... 03/16/06 - 20060057304 - Biased pulse dc reactive sputtering of oxide films A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films ... 03/09/06 - 20060051520 - Process and apparatus for the plasma coating of workpieces with spectral evaluation of the process parameters The invention provides a process for coating workpieces by plasma-induced chemical vapor deposition, in which a process gas is introduced into a coating chamber and a plasma is ignited by electromagnetic energy in at least one region of the coating chamber which adjoins the workpiece and in which the process ... 03/02/06 - 20060045988 - Pretreatment process of a substrate in micro/nano imprinting technology A pretreatment process of a substrate in a micro/nano imprinting technology is disclosed, comprising deposing the substrate on a holder and performing a plasma treatment or an ion treatment on the substrate. In the plasma treatment of the substrate, a reactive gas is first injected into the chamber to form ... 03/02/06 - 20060045987 - Localized plasma processing A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work ... 03/02/06 - 20060045986 - Silicon nitride from aminosilane using pecvd A process for the plasma enhanced chemical vapor deposition of silicon nitride films from nitrogen, argon, xenon, helium or ammonia and an aminosilane, preferably of the formula: (t-C4H9NH)2SiH2 that provides improved properties, particularly etch resistance and low hydrogen concentrations as well as stress control, of the resulting film for use ... 02/23/06 - 20060040067 - Discharge-enhanced atmospheric pressure chemical vapor deposition A discharge-enhanced CVD apparatus and method utilizes a nozzle containing electrodes to generate a high voltage electrical discharge at or near atmospheric pressure in the absence of a stabilizing or arc-suppressing noble gas. Reactants are passed directly through or/and under the discharge before being directed to the surface of a ... 02/23/06 - 20060040066 - Process of cleaning a semiconductor manufacturing system and method of manufacturing a semiconductor device A process of cleaning a semiconductor manufacturing system, and a method of manufacturing a semiconductor device. The cleaning process includes, for example, positioning a ceramic cover on the electrostatic chuck in tight contact with the chuck, and feeding a fluoride-based cleaning gas into a chamber. After the cleaning process, a ... 02/16/06 - 20060035035 - Film forming method and film forming apparatus When an amorphous silicon film is formed by a plasma CVD method, a hydrogen gas is supplied into a chamber before the start of film formation to cause discharge. In this state, film formation is not made. At the step where the discharge becomes stable, silane as a film forming ... 02/09/06 - 20060029748 - Deposition method A deposition method for forming a thin film on a processed substrate by supplying a first gas including a metal, nitrogen, and carbon and a second gas reducing the first gas into a process vessel where a substrate holding table for holding the processed substrate is provided inside thereof, the ... 02/09/06 - 20060029747 - Elimination of flow and pressure gradients in low utilization processes The amount of atoms diffused into a substrate may be made uniform or the thickness of a thin film may be made uniform in a low species utilization process by stopping the flow of gas into a reaction chamber during the low species utilization process. Stopping the flow of gas ... 02/09/06 - 20060029746 - Plasma arc coating system A system for coating a substrate includes a heater that heats the substrate. The heater includes a two-dimensional array of a plurality of heat sources which supply heat to the substrate when the substrate is in the presence of the array of heat sources. The heater further includes a controller ... 02/09/06 - 20060029745 - High throughput ild fill process for high aspect ratio gap fill A method for filling gaps in high aspect ratio patterned features on an integrated circuit using plasma CVD processes. A plasma is generated by an inert gas and process gases including silicon and oxygen components. The plasma causes the product gases to react and deposit onto the substrate and concurrently ... 02/02/06 - 20060024451 - Enhanced magnetic shielding for plasma-based semiconductor processing tool Embodiments in accordance with the present invention relate to techniques for enhancing uniformity of plasma-based semiconductor processing. In one technique, the exterior of a plasma-based processing chamber features a series of substantially continuous plates composed of a material exhibiting a low permeability to magnetic fields. This high-μ shielding material is ... 01/26/06 - 20060019040 - Hydrogen diffusion barrier on steel by means of a pulsed-plasma ion-nitriding process Patente of invention for “Hydrogen Diffusion Barrier on Steel by Means of a Pulsed-Plasmalon-Nitriding Process”. The present invention refers to a pulsed-plasma ion-nitriding process performed with the objective of creating hydrogen diffusion barrier on steel, herein exemplified by using the API 5L X-65 steel; high-strength low-alloy steel. The pulsed-plasma ion-nitriding ... 01/19/06 - 20060013965 - Method of forming a coating on a plastic glazing The present invention relates to a process for the formation of a coating on at least a portion of a plastic substrate, characterized in that it is carried out at a temperature at least equal to the maximum temperature of use of the coated substrate minus 20° C. The invention ... 01/12/06 - 20060008595 - Film-forming method A plurality of gases are prevented from being mixed with each other in a gas supply path when forming a film on a substrate to be processed so as to prevent generation of particles to enable a stable and clean film formation. A film containing metal is formed on a ... 01/12/06 - 20060008594 - Plasma enhanced chemical vapor deposition system for forming carbon nanotubes An embodiment of a system for forming carbon nanotubes (CNTs) using plasma enhanced chemical vapor deposition (PECVD) uses one or more of RF and DC power supplies coupled to electrodes in various configurations within a process chamber of the system. By application of a sufficient DC voltage to one or ... 01/12/06 - 20060008593 - Device for carrying out a plasma-assisted process A device for carrying out a plasma enhanced process includes, within a vacuum chamber, at least one magnetron electrode (32) constituting an unbalanced magnetron having a flat magnetron face (20) with peripheral and central magnetic poles of opposite polarities connected to a source (34) of alternating voltage. The device further ... 01/12/06 - 20060008592 - Preparation of superabsorbent materials by plasma modification The invention relates to a method of altering the characteristics of a material, by applying one of, but preferably both of the steps of cross-linking of either or both the exterior and internal surfaces of the substrate and/or plasma modification or plasma deposition of/onto the cross-linked material. When both steps ... 12/22/05 - 20050281960 - Thin film forming method, optical film, polarizing film and image display method A method of forming a layer or layers are disclosed which comprises the steps of transporting a substrate having a first surface and a second surface on the side opposite the first surface to a gap formed between a first electrode and a second electrode opposing each other, the second ... 12/22/05 - 20050281959 - Plasma generating apparatus and method of forming alignment film of liquid crystal display using the same The present invention relates to a plasma generating apparatus and a method of forming an alignment film of a liquid crystal display using the plasma generating apparatus. A high voltage is applied to the main electrode to generate a high non-regular electric field having directivity. Thus, the main electrode generates ... 12/22/05 - 20050281958 - Electron beam enhanced nitriding system (ebens) An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and ... 12/15/05 - 20050276931 - Method of fabricating an electrochemical device using ultrafast pulsed laser deposition A method of fabricating a multi-layered thin film electrochemical device is provided. The method comprises: providing a first target material in a chamber; providing a substrate in the chamber; emitting a first intermittent laser beam directed at the first target material to generate a first plasma, wherein each pulse of ... 12/08/05 - 20050271830 - Chemical vapor deposition method A chemical vapor deposition method forms a dielectric layer on a wafer with a plasma reaction generated by applying radio frequency power to electrodes positioned at upper and lower portions of a chamber. The method includes the steps of placing the wafer into the chamber, forming a first dielectric layer ... 12/08/05 - 20050271829 - Plasma-assisted formation of carbon structures Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for synthesizing carbon structures. In one embodiment, a method is provided for synthesizing a carbon structure including forming a plasma by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst and adding at least ... 12/01/05 - 20050266174 - Methods and apparatus for reducing arcing during plasma processing In a first aspect, a method is provided for use during plasma processing. The first method includes the steps of (1) placing a substrate on a substrate holder of a plasma chamber; (2) positioning a cover frame adjacent and below a perimeter of the substrate; and (3) employing the cover ... 12/01/05 - 20050266173 - Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma ... 11/24/05 - 20050260357 - Stabilization of high-k dielectric materials In one embodiment, a method for forming a dielectric stack on a substrate is provided which includes depositing a first layer of a dielectric material on a substrate surface, exposing the first layer to a nitridation process, depositing a second layer of the dielectric material on the first layer, exposing ... 11/24/05 - 20050260356 - Microcontamination abatement in semiconductor processing A film is deposited over a substrate by flowing a process gas to a process chamber and flowing a fluent gas to the process chamber. The process gas includes a silicon-containing gas and an oxygen-containing gas. The fluent gas includes a flow of helium and a flow of molecular hydrogen, ... 11/17/05 - 20050255256 - Light emitting element and process for producing the same Disclosed are a light emitting element that, in the formation of a plurality of luminescent layers, can effectively suppress color mixing in each luminescent layer and loss in dissolution of the luminescent layer per se, and a process for producing the same. The light emitting element comprising a plurality of ... 11/17/05 - 20050255255 - Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode ... 10/27/05 - 20050238818 - Plasma processing method and plasma processing apparatus A plasma processing method and a plasma processing apparatus. The plasma processing method includes: a placing process for placing the electrode material layer between a pair of electrodes formed in a vacuum chamber; a gas supply process for supplying a plasma processing gas into the vacuum chamber; and a electric ... 10/27/05 - 20050238817 - Method and electrode assembly for non-equilibrium plasma treatment A method and electrode assembly for treating a substrate with a non-equilibrium plasma in which the electrode assembly has two or more spaced barrier electrodes and a ground electrode spaced apart from the two spaced barrier electrodes for passage of a substrate to be treated. Plasma fluid medium is introduced ... 10/27/05 - 20050238816 - Method and apparatus of depositing low temperature inorganic films on plastic substrates A method and apparatus for depositing a low temperature inorganic film onto large area plastic substrates are described in this invention. Low temperature (<80° C.) inorganic films do not adhere very well to the plastic substrate. Therefore, a low temperature (<80° C.) plasma pre-treatment is added to improve the adhesion ... 10/20/05 - 20050233093 - Film formation method and apparatus utilizing plasma cvd A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component ... 10/20/05 - 20050233092 - Method of controlling the uniformity of pecvd-deposited thin films We have discovered that controlling a combination of PECVD deposition process parameters during deposition of silicon-containing thin film provides improved control over surface standing wave effects. By minimizing surface standing wave effects, the uniformity of film properties (particularly film thickness) across a substrate surface onto which the films have been ... 10/20/05 - 20050233091 - Plasma-assisted coating Methods and apparatus are provided for igniting, modulating, and sustaining plasma (615) for various coating processes. In one embodiment, the surface of an object can be coated (247) by forming plasma in a cavity (230) with walls (232) by subjecting a gas to an amount of electromagnetic radiation power via ... 10/13/05 - 20050227018 - Application of a coating forming material onto at least one substrate The invention relates to a method and apparatus for the formation of a coating on a substrate. The coating is formed by the deposition of a coating forming material onto the substrate in an atomised form via a nozzle, nebulizer or the like. The material is applied and directed to ... 10/06/05 - 20050221022 - Integration of multiple frequency band fbar filters A method and system for forming FBAR filters for different frequency bands with film stacks of different thicknesses, where at least some layers of different thicknesses are formed substantially at the same time, during a process operation are described herein. ... 10/06/05 - 20050221021 - Method and system for performing atomic layer deposition A plasma processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first gas and a second gas to the process chamber. The system includes a controller that controls the gas ... 10/06/05 - 20050221020 - Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film A method and apparatus are included that provide an improved deposition process for a Tunable Etch Resistant ARC (TERA) layer with improved wafer to wafer uniformity and reduced particle contamination. More specifically, the processing chamber is seasoned to reduce the number of contaminant particles generated in the chamber during the ... 09/29/05 - 20050214478 - Chemical vapor deposition plasma process using plural ion shower grids A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid ... 09/29/05 - 20050214477 - Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of ... 09/15/05 - 20050202184 - Expanding thermal plasma deposition system A system to coat a substrate includes a deposition chamber maintained at sub-atmospheric pressure, one or more arrays containing two or more expanding thermal plasma sources associated with the deposition chamber, and at least one injector containing orifices for each array. The substrate is positioned in the deposition chamber and ... 09/15/05 - 20050202183 - Plasma processing system, plasma processing method, plasma film deposition system, and plasma film deposition method A plasma film deposition apparatus (plasma processing apparatus) is disclosed, which includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface, and which supplies the second antenna 11b with an electric current flowing in a direction opposite to the direction of an electric ... 09/08/05 - 20050196549 - Microwave enhanced cvd method and apparatus A new chemical vapor reaction system is described. Instead of ECR where electrons can move as independent particles without interaction, a mixed cyclotron resonance is a main exciting principal for chemical vapor reaction. In the new proposed resonance, the resonating space is comparatively large so that a material having a ... 09/08/05 - 20050196548 - Component protected against corrosion and method for the production thereof and device for carrying out the method Component having corrosion protection and including a base body made of one of a steel material and a light metal material. A corrosion-inhibiting surface layer that is a dense, fine-grained, largely pore-free structure formed by plasma-based vapor deposition. The surface layer having an average thickness of between 1 μm and ... 09/01/05 - 20050191437 - Method of forming a catalytic surface comprising at least one of pt, pd, co and au in at least one of elemental and alloy forms The invention includes methods of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms. In one implementation, a substrate is provided which has a first substrate surface comprising at least one of Pt, Pd, ... 08/04/05 - 20050170104 - Stress-tuned, single-layer silicon nitride film We have discovered that is possible to tune the stress of a single-layer silicon nitride film by manipulating certain film deposition parameters. These parameters include: use of multiple (typically dual) power input sources operating within different frequency ranges; the deposition temperature; the process chamber pressure; and the composition of the ... 07/28/05 - 20050163939 - Method for coating the quartz burner of an hid lamp In order to improve the energy balance of an HID lamp, the quartz burner, preferably the inside thereof, is coated with a UV reflecting layer system by alternatingly applying amorphous thin layers made at least of titanium oxide and silicon oxide having the respective general stoichiometry TiOy and SiOx by ... 07/21/05 - 20050158480 - Protective coating composition A method of forming a coating on a powdered substrate, which method comprises introducing an atomized liquid and/or solid coating forming material and separately transporting a powdered substrate to be coated into an atmospheric plasma discharge and/or an ionized gas stream resulting therefrom, and exposing the powdered substrate to the ... 07/07/05 - 20050147767 - Method for coating a support with a material The invention concerns a method for coating a support (10) comprising a first material with a coating layer comprising a second material, including at least a phase (A, A′) for deposition of a layer of given thickness of coherent material (11, 13) on the support surface during which the interaction ... 06/02/05 - 20050118354 - Process for the fabrication of oxide films The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical ... 06/02/05 - 20050118353 - Method and system for etching a high-k dielectric material A method for heating a substrate between a first process and a second process using a plasma is described. The heating method comprises thermally isolating the substrate on the substrate holder by removing the backside supply of a heat transfer gas and removing the clamping force. Furthermore, an inert gas, ... ### FreshPatents.com Support |