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Coating Processes > Coating By Vapor, Gas, Or Smoke > Mixture Of Vapors Or Gases (e.g., Deposition Gas And Inert Gas, Inert Gas And Reactive Gas, Two Or More Reactive Gases, Etc.) Utilized > Coating Formed From Vaporous Or Gaseous Phase Reaction Mixture (e.g., Chemical Vapor Deposition, Cvd, Etc.) Coating Formed From Vaporous Or Gaseous Phase Reaction Mixture (e.g., Chemical Vapor Deposition, Cvd, Etc.)Coating Formed From Vaporous Or Gaseous Phase Reaction Mixture (e.g., Chemical Vapor Deposition, Cvd, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.05/24/07 - 20070116876 - Copper (i) compounds useful as deposition precursors of copper thin films Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. ... 11/30/06 - 20060269672 - Local plasma processing A method and an apparatus for performing the method. The method includes: (a) providing an apparatus, wherein the apparatus comprises (i) a chamber, (ii) a plasma device being in and coupled to the chamber, (iii) a shower head being in and coupled to the chamber, and (iv) a chuck being ... 09/21/06 - 20060210713 - Plasma enhanced atomic layer deposition system and method A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process ... 06/08/06 - 20060121198 - Delivery device Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery ... 06/01/06 - 20060115596 - Scalable lead zirconium titanate (pzt) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors ... 02/02/06 - 20060024443 - Chemical vapor deposition material and chemical vapor deposition and a method of forming a ruthenium film from the chemical vapor deposition material by chemical vapor deposition. A high-quality ruthenium film even when it is very thin can be obtained. ... 12/22/05 - 20050281952 - Copper (i) compounds useful as deposition precursors of copper thin films Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. ... 12/08/05 - 20050271817 - Method for preparation of aluminum oxide thin film An aluminum oxide film is formed on a substrate by a process comprising A) bringing the vapor of a dialkylaluminum alkoxide into contact with the substrate mounted in a deposition reactor so that an aluminum-containing adsorption layer is formed on the substrate; B) removing the unreacted aluminum compound and by-products ... 11/17/05 - 20050255246 - Method of fabricating metal silicate layer using atomic layer deposition technique There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer ... 11/17/05 - 20050255245 - Method and apparatus for the chemical vapor deposition of materials The halide chemical vapor deposition process deposits a chemical compound comprised of at least two different elements. The method employs a first process gas which includes a halogenated compound of a first one of the at least two different elements, and a second process gas which includes hydrogen and a ... 09/15/05 - 20050202175 - Integrated, continuous method for the production of molecular single-component percursors having a nitrogen bridging function The invention relates to a method for the regeneration of a reactor and the use of said method for the improved performance of production processes for desired products. ... 06/02/05 - 20050118335 - Method of forming thin ruthenium-containing layer A method of forming a thin ruthenium-containing layer includes performing a CVD process using butyl ruthenoscene as a ruthenium source material. The thin ruthenium-containing layer may be formed by a one-step or two-step CVD process. The one-step CVD process is performed under a constant oxygen flow rate and a constant ... ### FreshPatents.com Support |