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Coating Processes > Coating By Vapor, Gas, Or Smoke Coating By Vapor, Gas, Or SmokeCoating By Vapor, Gas, Or Smoke patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.06/07/07 - 20070128359 - Production apparatus for producing gallium nitride film semiconductor and cleaning apparatus for exhaust gas There are disclosed a production apparatus for producing a gallium nitride film semiconductor by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride film semiconductor by HVPE process. Therein exhaust piping for exhaust gas in ... 06/07/07 - 20070128358 - Chemical vapour deposition apparatus Chemical vapour deposition apparatus comprises a process chamber, a bubbler for supplying a volatile precursor to the chamber, a vacuum pump for drawing an exhaust gas from the process chamber, an abatement device for treating the exhaust gas, and a bypass line for conveying the precursor from the bubbler to ... 06/07/07 - 20070128357 - Lift-off patterning processes employing energetically-stimulated local removal of solid-condensed-gas layers The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions, ... 05/24/07 - 20070116874 - Selective aluminide coating process A method for coating internal surfaces of a turbine engine component comprises flowing an aluminide containing gas into passages in the turbine engine component so as to coat the internal surfaces formed by the passages, allowing the aluminide containing gas to flow through the passages and out openings in external ... 05/24/07 - 20070116873 - Apparatus for thermal and plasma enhanced vapor deposition and method of operating A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a ... 05/24/07 - 20070116872 - Apparatus for thermal and plasma enhanced vapor deposition and method of operating A method, computer readable medium, and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position ... 05/17/07 - 20070110898 - Method and apparatus for providing precursor gas to a processing chamber In one embodiment, an apparatus for generating a gaseous chemical precursor used in a vapor deposition processing system is provided which includes a canister comprising a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior ... 05/17/07 - 20070110897 - Layer with controlled grain size and morphology for enhanced wear resistance Wear resistance of the prior-art Ti(C,N) layers can be considerably enhanced by optimising the grain size and microstructure. Considerably better wear resistance in, for example in many carbon steels, can be obtained by modifying the grain size and morphology of prior art MTCVD Ti(C,N) coatings. The improved coating is composed ... 05/03/07 - 20070098894 - Reactor surface passivation through chemical deactivation Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on the reaction space surface(s). A ... 05/03/07 - 20070098893 - Coated substrate created by systems and methods for modulation of power and power related functions of pecvd discharge sources to achieve new film properties A method of generating a film during a chemical vapor deposition process is disclosed. One embodiment includes creating a substrate by generating a first electrical pulse having a first pulse amplitude; using the first electrical pulse to generate a first density of radicalized species; disassociating a feedstock gas using the ... 05/03/07 - 20070098892 - Method of forming a layer and method of manufacturing a capacitor using the same In a method of forming a layer and a method of manufacturing a capacitor using the same, a preliminary zirconium oxide film is formed on a substrate by introducing a first reactant including a zirconium precursor, and a first oxidant onto the substrate. A thermal treatment is performed on the ... 05/03/07 - 20070098891 - Vapor deposition apparatus and method A method is disclosed for depositing a layer onto a substrate, including heating an evaporator to a temperature capable of completely evaporating the evaporant to be deposited; dispensing into the evaporator one or more quantized units of the evaporant that completely vaporizes; introducing a flow of a carrier gas into ... 05/03/07 - 20070098890 - Fabrication of low dielectric constant insulating film The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a ... 05/03/07 - 20070098889 - Vacuum film deposition method and system, and filter manufactured by using the same A vacuum film deposition method comprises the steps of mounting a substrate on a substrate holder (6a) that is disposed in a vacuum chamber (1) and is provided with a passage (7f), (7g), and (7j) in which predetermined heat medium flows; maintaining an inside of the vacuum chamber substantially in ... 04/26/07 - 20070092646 - Substrate processing apparatus and substrate processing method A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into ... 04/26/07 - 20070092645 - Delivering particulate material to a vaporization zone It is an object of the present invention to provide an effective way of replenishing particulate material for vaporization. This object is achieved by a method for delivering material into a deposition chamber having a vaporization zone to vaporize such material to form a layer. The improvement includes providing a ... 04/12/07 - 20070082128 - Method for coating a substrate The invention relates to a method for coating a substrate with a metal or a metallic compound. According to said method, a metallo-organic parent compound and a substrate to be coated are introduced into a receptacle. Before the coating process, an organic solubilizer for the metal-organic parent compound is applied ... 04/05/07 - 20070077358 - Apparatus for depositing an organic layer and method for controlling a heating unit thereof An apparatus for depositing an organic layer and a method for controlling the heating unit thereof are provided. The apparatus includes a crucible positioned in a deposition chamber and containing materials for evaporation. The apparatus also includes a heating unit having first and second heat sources for heating the crucible. ... 04/05/07 - 20070077357 - Source for inorganic layer and method for controlling heating source thereof A deposition source for an inorganic layer and a method for controlling a heating source thereof capable of improving a deposition efficiency, preventing condensation of a nozzle, and/or precisely controlling the temperature by minimizing the time that is needed to reach a stabilization of a deposition rate. The deposition source ... 04/05/07 - 20070077356 - Method for atomic layer deposition of materials using an atmospheric pressure for semiconductor devices A method for atomic layer deposition. The method includes providing a substrate having a surface region and exposing the surface region of the substrate to an atmospheric pressure. The method also maintains at least the substrate at about the atmospheric pressure and forms a film overlying the surface region using ... 04/05/07 - 20070077355 - Film formation apparatus and methods including temperature and emissivity/pattern compensation A film formation system 10 has a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, the top cover 11 has a reflective surface 13 for reflecting radiant energy back onto a substrate 19, pyrometers 405 for measuring the temperature of the substrate 19 ... 04/05/07 - 20070077354 - Thermal conditioning plate with gas gap leak Methods and apparatus enable thermal conditioning of a substrate in a vacuum chamber that is evacuated to a high vacuum pressure. The substrate rests on a thermally controlled support that defines a cavity area between an underside of the substrate and a recessed section of the support. A fence of ... 04/05/07 - 20070077353 - Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system A method and system for treating a dielectric film on a plurality of substrates includes disposing the plurality of substrates in a batch processing system, the dielectric film on the plurality of substrates having a dielectric constant value less than the dielectric constant of SiO2. The plurality of substrates are ... 03/29/07 - 20070071894 - Method for atomic layer deposition of materials using a pre-treatment for semiconductor devices A method for forming atomic layer deposition. The method includes placing a semiconductor substrate (e.g., wafer, LCD panel) including an upper surface in a chamber. The upper surface includes one or more carbon bearing species and a native oxide layer. The method includes introducing an oxidizing species into the chamber. ... 03/29/07 - 20070071893 - Organic aluminum precursor and method of manufacturing a metal wiring using the same wherein R1, R2, R3, R4 R5, R6, R7 and R8 are independently H or a C1-C5 alkyl functional group, and Y is boron. ... 03/29/07 - 20070071892 - Organic-metal precursor material and method of manufacturing metal thin film using the same Provided are an organic-metal precursor material that can be readily decomposed without reacting with an oxidant, a method of manufacturing a metal thin film using the organic-metal precursor material, and a metal thin film prepared using the organic-metal precursor material. The organic-metal precursor material is an organic molecule having lone-pair ... 03/22/07 - 20070065580 - Method for forming transparent thin film, transparent thin film formed by the method and transparent substrate with transparent thin film The present invention provides a method for forming a transparent thin film by a chemical vapor deposition method using a gaseous raw material. In the method, a film growth rate is at least 8 nm/s, and the transparent thin film contains at least one selected from carbon (C) and oxygen ... 03/22/07 - 20070065578 - Treatment processes for a batch ald reactor Embodiments of the invention provide treatment processes to reduce substrate contamination during a fabrication process within a vapor deposition chamber. A treatment process may be conducted before, during or after a vapor deposition process, such as an atomic layer deposition (ALD) process. In one example of an ALD process, a ... 03/22/07 - 20070065577 - Directed reagents to improve material uniformity A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the ... 03/22/07 - 20070065576 - Technique for atomic layer deposition A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for atomic layer deposition. The apparatus may comprise a process chamber having a substrate platform to hold at least one substrate. The apparatus may also comprise a supply of ... 03/08/07 - 20070054051 - Deposition device A deposition device provided with an evaporation source which is opposite to a substrate over which a film is deposited and is provided to be capable of moving in accordance with a surface of the substrate and a means for supplying an evaporation material to the evaporation source (evaporation material ... 03/08/07 - 20070054050 - Photoresist coating apparatus and method A photoresist coating apparatus and method for solving an edge bead problem occurring in photoresist coating. An edge bead is prevented from occurring by forming a solvent vapor layer from ionized solvent vapor on a wafer through the use of a magnetic field generator, spraying a liquid photoresist on the ... 03/08/07 - 20070054049 - Method of growing a thin film onto a substrate A method of growing a thin film onto a substrate placed in a reaction chamber according to the ALD method by subjecting the substrate to alternate and successive surface reactions. The method includes providing a first reactant source and providing an inactive gas source. A first reactant is fed from ... 03/08/07 - 20070054048 - Extended deposition range by hot spots A catalytic reactant with a low activation energy barrier for oxide formation can be used to facilitate atomic layer deposition type reactions at reduced temperatures, thus increasing the quality of the deposited films. An initial reaction with a catalytic reactant provides localized heat at the substrate surface in the vicinity ... 03/08/07 - 20070054047 - Method of forming a tantalum-containing layer from a metalorganic precursor A method and precursor for forming and integrating a Ta-containing layer in semiconductor processing. The tantalum precursor has the formula (CpR1)(CpR2)TaH(CO), where Cp is a cyclopentadienyl functional group and R1 and R2 are H or alkyl groups. The method includes providing a substrate in a process chamber of a deposition ... 03/08/07 - 20070054046 - Method of forming a tantalum-containing layer from a metalorganic precursor A method and precursor for forming and integrating a Ta-containing layer in semiconductor processing. The tantalum precursor has the formula (CpR1)(CpR2)TaH(CO), where Cp is a cyclopentadienyl functional group and R1 and R2 are H or alkyl groups. The method includes providing a substrate in a process chamber of a deposition ... 03/08/07 - 20070054045 - Method for conditioning chemical vapor deposition chamber A method for conditioning a heater of a CVD chamber by forming a pre-coating layer on the surface of the heater is provided. Hence, the surface condition of the heater is improved for better thermal efficiency and the surface of the heater is protected from the possible damages of the ... 03/08/07 - 20070054044 - Method for forming metal oxide coating film and vapor deposition apparatus A photocatalytic composite material having a photocatalytic titanium oxide film on the surface of a substrate is produced by a CVD method in which TiCl4 vapor is reacted with water vapor. The TiCl4 vapor and the water vapor are injected into a vapor deposition chamber (9) through nozzles (5) and ... 03/01/07 - 20070048446 - Gas delivery system for semiconductor processing The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the ... 02/22/07 - 20070042120 - Method of forming semiconductor layer A method of forming a semiconductor layer includes cleaning a substrate having a germanium layer formed as a surface layer, with a solution containing at least one selected from the group consisting of hydrochloric acid, hydrobromic acid, and hydroiodic acid, subjecting the substrate after the cleaning to hydrogen annealing in ... 02/22/07 - 20070042119 - Vaporizer for atomic layer deposition system A multi-stage precursor vessel system for an atomic layer deposition (ALD) system in which a precursor is transferred from a first, low temperature reservoir chamber into a second (or subsequent) chamber at higher temperature, which second (or subsequent) chamber is used to create a highest possible vapor pressure of the ... 02/22/07 - 20070042118 - Encapsulated thermal processing An apparatus for heating a wafer during processing includes a process chamber defining a cavity. A plate disposed in the cavity is configured to receive a wafer introduced into the process chamber. A heated cap disposed in the cavity and above the plate is configured to be translated in a ... 02/22/07 - 20070042117 - Method and apparatus to control semiconductor film deposition characteristics Methods, systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated. ... 02/15/07 - 20070036895 - Deposition methods utilizing microwave excitation The invention includes a deposition apparatus having a reaction chamber, and a microwave source external to the chamber. The microwave source is configured to direct microwave radiation toward the chamber. The chamber includes a window through which microwave radiation from the microwave source can pass into the chamber. The invention ... 02/15/07 - 20070036894 - Atomic layer deposition of tantalum-containing films using surface-activating agents and novel tantalum complexes Atomic layer deposition processes for the formation of tantalum-containing films on surfaces are provided. Also provided are novel tantalum complexes that can be used as tantalum precursors in the disclosed deposition processes. ... 02/15/07 - 20070036893 - Method for reproducible manufacturing of storage phosphor plates In a method of consecutively manufacturing a set of at least 5 storage phosphor plates by a vapor deposition process in one and the same vapor deposition apparatus, in said apparatus, before starting each vaporization, refractory material surfaces are brought into contact, in a crucible unit thereof, with liquefied raw ... 02/15/07 - 20070036892 - Enhanced deposition of noble metals The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. ... 02/08/07 - 20070031600 - Method and a device for depositing a film of material or otherwise processing or inspecting, a substrate as it passes through a vacuum environment guided by a plurality of opposing and balanced air bearing lands and sealed by differentially pumped groves A method and apparatus for coating and baking and deposition of surfaces on glass substrate or flexible substrate, such as films and thin glass sheets or other similar work pieces as it transitions thru and between small gaps of aero-static or hydro-static porous media bearings and differentially pumped vacuum grooves, ... 02/08/07 - 20070031599 - Use of dissolved hafnium alkoxides or zirconium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers or zirconium oxide and zirconium oxynitride layers The present invention relates to the use of a highly concentrated solution of one or more hafnium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers. The present invention relates in particular to the use of a 30 to 90% strength by weight solution of one or more hafnium ... 02/08/07 - 20070031598 - Method for depositing silicon-containing films Methods for forming silicon containing films using silylamine moieties are disclosed. In some embodiments, silylamine moieties are employed to deposit silicon-nitrogen, silicon-oxygen, or silicon-nitrogen-oxygen materials at temperatures of less than 550° C. In some embodiments methods are practiced within process chambers adapted to contain a single substrate as well as ... 02/08/07 - 20070031597 - Organometallic precursors and methods of forming thin films including the use of the same wherein R1 and R2 are each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor. ... 02/08/07 - 20070031596 - Method for reducing particle contamination in a low pressure cvd apparatus A method for reducing particle contamination is applied in a low pressure CVD apparatus. A loading recipe is performed for setting the status of the low pressure CVD apparatus, and wherein the loading recipe comprises a first purge recipe. A processing recipe is then performed for performing a Chemical Vapor ... 02/01/07 - 20070026149 - Semiconductor manufacturing apparatus and method of manufacturing semiconductor device In a process of annealing an insulating film such as a silicon oxide film (SiO2) or a silicon oxynitride film (SiON) provided in a processing chamber 6 within an atmosphere of an inert gas 2 guided from a first mass flow controller 3 via a gas inlet 7, an amount ... 02/01/07 - 20070026148 - Vapor phase deposition apparatus and vapor phase deposition method A vapor phase deposition apparatus includes a chamber, a support table which is accommodated in the chamber and supports a substrate in the chamber, a first passage which supplies a gas to form a film and is connected to the chamber, and a second passage which discharges the gas and ... 02/01/07 - 20070026147 - Enhanced copper growth with ultrathin barrier layer for high performance interconnects A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal ... 02/01/07 - 20070026146 - Vaporizing material at a uniform rate A method of vaporizing material at a uniform rate for forming a layer on a substrate includes feeding a column of vaporizable material from a temperature controlled region maintained below the vaporizable material's effective vaporization temperature to a source of vaporization energy, wherein the volume of the column can vary ... 02/01/07 - 20070026145 - Method and device for the production of a three-dimensional moulded body The invention relates to a method for the production of a three-dimensional moulded body (52) by successively solidifying layers of a powdery construction material (57), which can be solidified by means of electromagnetic radiation or partial radiation, on points corresponding to the respective cross section of the moulded body (52). ... 02/01/07 - 20070026144 - Method of depositing thin film on wafer Provided is a method of depositing a thin film. The method is performed using a thin film deposition apparatus that includes a reaction chamber having a wafer block located in a chamber to heat a loaded wafer up to a predetermined temperature, a top lid covering the chamber to seal ... 01/25/07 - 20070020391 - Preparation of membranes using solvent-less vapor deposition followed by in-situ polymerization A system of fabricating a composite membrane from a membrane substrate using solvent-less vapor deposition followed by in-situ polymerization. A first monomer and a second monomer are directed into a mixing chamber in a deposition chamber. The first monomer and the second monomer are mixed in the mixing chamber providing ... 01/25/07 - 20070020390 - Supplying method of chemicals Even if a process cylinder of a CVD machine, wherein a chemical which is a starting material for CVD is stored, becomes empty, a chemical of the same kind can be filled into the process cylinder in a short time without exchanging the process cylinder. In a path made of ... 01/25/07 - 20070020389 - Method of forming film, patterning and method of manufacturing electronic device using thereof A method of forming a film includes: disposing a plurality of films on a substrate by discharging a chemical species or a precursor material thereof from at least one nozzle, the plurality of films being made of the chemical species. ... 01/18/07 - 20070014919 - Atomic layer deposition of noble metal oxides Electrically conductive noble metal oxide films can be deposited by atomic layer deposition (ALD)-type processes. In preferred embodiments, Re, Ru, Os and Ir oxides are deposited by alternately and sequentially contacting a substrate with vapor phase pulses of a noble metal precursor and an oxygen source. The noble metal precursor ... 01/11/07 - 20070009659 - Process for the self-limiting deposition of one or more monolayers The invention relates to a process for depositing at least one layer, which contains at least one first component, on at least one substrate in a process chamber, first and second starting materials, of which at least the first starting material contains the first component, being introduced in gaseous form ... 01/11/07 - 20070009658 - Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for wcvd process A process and an apparatus is disclosed for forming refractory metal layers employing pulse nucleation to minimize formation of a concentration boundary layer during nucleation. The surface of a substrate is nucleated in several steps. Following each nucleation step is a removal step in which all reactants and by-products of ... 01/04/07 - 20070003698 - Enhanced copper growth with ultrathin barrier layer for high performance interconnects A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal ... 01/04/07 - 20070003697 - Lattice-matched allnn/gan for optoelectronic devices High-quality Al1-xInxN layers and AlInN/GaN Bragg mirrors near lattice-matched to GaN layers are grown by metalorganic vapor-phase epitaxy on a GaN buffer layer with no cracks over full 2-inch sapphire wafers. The index contrast relative to GaN is 6.5% to 11% for wavelengths ranging from 950 nm to 380 nm. ... 01/04/07 - 20070003696 - Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices directing Silane gas (SiH4) and Germane gas (GeH4) through the gas inlet into the growth chamber, the flow rates of the Silane gas and the Germane gas being adjusted in order to form said semiconductor layer (52) by means of vapor deposition with a growth rate in a range between ... 12/28/06 - 20060292302 - Apparatus and method for growing a synthetic diamond Disclosed herein is an apparatus and method for growing a synthetic diamond. The apparatus for growing a synthetic diamond comprises: a reaction area contained with a high pressure, high temperature apparatus; and a means for pulling a vacuum on the reaction area. The method for growing a synthetic diamond includes ... 12/28/06 - 20060292301 - Method of depositing germanium films A chemical vapor deposition method provides a smooth continuous germanium film layer, which is deposited on a metallic substrate at a sufficiently lower temperature to provide a germanium device suitable for use with temperature sensitive materials such as aluminum and copper. Another chemical vapor deposition method provides a smooth continuous ... 12/21/06 - 20060286297 - Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials A method of forming a periodic array of nano-scale objects using a block copolymer, and nano-scale object arrays formed from the method are provided. The method for forming the arrays generally includes the steps of depositing a block copolymer of at least two blocks on a substrate to form an ... 12/14/06 - 20060280868 - Method for treating vapor deposition apparatus, method for depositing thin film, vapor deposition apparatus and computer program product for achieving thereof A method for treating a vapor deposition apparatus, a method for depositing a thin film, a vapor deposition apparatus and a computer program product are disclosed for providing a reduced cleaning frequency. Accumulated material is deposited on an interior wall of a chamber of a vapor deposition unit during deposition ... 12/14/06 - 20060280867 - Apparatus and method for depositing tungsten nitride An apparatus for depositing a thin film on a substrate includes a processing chamber, supply pipes, and discharge pipes. Each supply pipe is configured to supply a process gas to the processing chamber, and each discharge pipe is connected to one of the supply pipes and an inhale part configured ... 12/14/06 - 20060280866 - Method and apparatus for mesoscale deposition of biological materials and biomaterials Methods and apparatus for the direct deposition or patterning of biological materials and compatible biomaterials. The method is capable of depositing biological materials and biomaterials in a computer defined pattern, and uses aerodynamic focusing of an aerosol stream to deposit mesoscale patterns onto planar or non-planar targets without the use ... 12/07/06 - 20060275547 - Vapor phase deposition system and method A system for depositing a vapor phase organic compound onto a substrate, comprising a vacuum chamber comprising a wall, a wall heater in thermal communication with the wall of the vacuum chamber, at least one of an evaporative source and a transport polymerization source configured to introduce the vapor phase ... 12/07/06 - 20060275546 - Apparatus and methods for isolating chemical vapor reactions at a substrate surface An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The reaction chamber has an upstream end and a downstream end, between which the substrate holder is positioned. The substrate holder is ... 12/07/06 - 20060275545 - Rare earth metal complex material for thin film formation and process of forming thin film wherein M is a rare earth metal atom. ... 11/30/06 - 20060269667 - Method and apparatus for using solution based precursors for atomic layer deposition A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions ... 11/30/06 - 20060269666 - Optical element An optical element includes a substrate, a columnar section that is formed above the substrate and has an upper surface for light emission or light incidence, a first protection layer formed above the substrate in a region including at least a circumference of the columnar section, a resin layer formed ... 11/30/06 - 20060269665 - Non-pressure gradient single cycle cvi/cvd apparatus and method A method for densifying porous structures inside a furnace using non-pressure gradient CVI/CVD in a single cycle is described. A hardware assembly for use in the single cycle non-pressure gradient CVI/CVD process is provided as well are process and process conditions are described. ... 11/30/06 - 20060269664 - Oxidative chemical vapor deposition of electrically conductive and electrochromic polymers Remarkably, disclosed herein is a solvent-less chemical vapor deposition (CVD) method for the oxidative polymerization and deposition of thin films of electrically-conducting polymers. In a preferred embodiment, the method provides poly-3,4-ethylenedioxythiophene (PEDOT) thin films. In other embodiments, the method is applicable to polymerization to give other conducting polymers, such as ... 11/23/06 - 20060263523 - Atomic layer deposition methods of forming conductive metal nitride-comprising layers This invention includes atomic layer deposition methods of forming conductive metal nitride comprising layers. In one implementation, an atomic layer deposition method of forming a conductive metal nitride comprising layer includes positioning a substrate within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto ... 11/23/06 - 20060263522 - Apparatus for chemical vapor deposition (cvd) with showerhead and method thereof Disclosed therein is a method of chemical vapor deposition (CVD) with a showerhead through which a source material gas comprising a reactive gas of at least one kind and a purge gas is injected over a substrate to deposit a film on the substrate, including the steps of: disposing the ... 11/23/06 - 20060263521 - Scintillator panel and method of manufacturing radiation image sensor An auxiliary substrate 20 is overlapped onto a thin substrate 11, and substrate 11 and auxiliary substrate 20 are covered with an organic film 12. Thereafter, a scintillator 13 is formed on a scintillator forming portion 12A of organic film 12 that corresponds to substrate 11. Here, since thickness is ... 11/16/06 - 20060257570 - Deposition methods A deposition method includes contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate. At least a part of the substrate is contacted with a second initiation precursor different from the first initiation precursor and a second portion of the ... 11/16/06 - 20060257569 - Method for in-situ polycrystalline thin film growth A method for in-situ polycrystalline thin film growth is provided. A catalyst enhanced chemical vapor deposition (CECVD) apparatus is used to grow the polycrystalline silicon thin film. No subsequent annealing or dehydrogenating process is needed. The method comprises exhausting a chamber to form a vacuum chamber, and then purging vacuum ... 11/16/06 - 20060257568 - Vapor-phase growing unit A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a ... 11/16/06 - 20060257567 - Organoaluminum precursor compounds wherein R1, R2, R3 and R4 are the same or different and each represents hydrogen or an alkyl group having from 1 to about 3 carbon atoms, and R5 represents an alkyl group having from 1 to about 3 carbon atoms. This invention also relates to processes for producing the ... 11/16/06 - 20060257566 - Isotope-doped carbon nanotube and method and apparatus for forming the same An isotope-doped carbon nanotube (40) includes a plurality of first carbon nanotube segments (402) having carbon-12 isotopes and a plurality of second carbon nanotube segments (404) having carbon-13 isotopes. The first and second carbon nanotube segments are alternately arranged along a longitudinal direction of the carbon nanotube. Three preferred methods ... 11/16/06 - 20060257565 - Method of preparing catalyst layer for synthesis of carbon nanotubes and method of synthesizing carbon nanotubes using the same A method of making a catalyst layer for synthesis of carbon nanotubes is provided. The method includes: coating a thin film formed of copolymer on a substrate; heat treating the thin film coated on the substrate to form a regular structure; removing a part of block copolymers that form the ... 11/16/06 - 20060257564 - Systems and methods for producing single-walled carbon nanotubes (swnts) on a substrate According to one embodiment, a method of fabricating a nanotube on a substrate is provided. The method can include a step for attaching a catalyst to a substrate. The method can also include a step for heating the catalyst to a predetermined temperature such that a nanotube grows from the ... 11/16/06 - 20060257563 - Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique There are provided methods of fabricating a silicon-doped metal oxide layer on a semiconductor substrate using an atomic layer deposition technique. The methods include an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon-doped metal oxide layer formation cycle ... 11/16/06 - 20060257562 - Methods of producing an alumina film mainly in alpha crystal structure and the multilayer film thereof Provided is a method of producing an alumina film mainly in α crystal structure superior in heat resistance, wherein the alumina film mainly in α crystal structure is formed on a substrate, independently of the kind of the substrate at relatively low temperature, by treating the substrate surface with a ... 11/09/06 - 20060251813 - Methods of forming material over substrates The invention includes ALD-type methods in which two or more different precursors are provided within a chamber at different and substantially non-overlapping times relative to one another to form a material, and the material is thereafter exposed to one or more reactants to change a composition of the material. In ... 11/09/06 - 20060251812 - Methods for forming atomic layers and thin films including a tantalum amine derivative and devices including the same Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR1)(NR2R3)3, wherein R1, R2 and R3 are each independently H or a C1-C6 alkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed ... 11/09/06 - 20060251811 - Controllably feeding powdered or granular material A method for metering powdered or granular material onto a heated surface to vaporize such material. The method comprises providing a rotatable auger d for receiving powdered or granular material and as the rotatable auger rotates, such rotatable auger translates such powdered or granular material along a feed path to ... 11/09/06 - 20060251810 - Metering material to promote rapid vaporization Apparatus for vaporization of powdered or granular material, includes a container for holding powdered or granular material having at least one component; a vaporization structure; and a positive displacement mechanism spaced from the vaporization structure defining a chamber for receiving powdered or granular material from the container, and delivering such ... 10/26/06 - 20060240188 - Chemical vapor deposition apparatus This invention includes chemical vapor deposition apparatus, methods of chemical vapor depositing an amorphous carbon comprising layer on a substrate, and methods of chemical vapor depositing at least one of Si3N4 and SixOyNz on a substrate. In certain implementations, a gas output manifold having at least one gas output to ... 10/26/06 - 20060240187 - Deposition of an intermediate catalytic layer on a barrier layer for copper metallization In one embodiment, a method for depositing a conductive material on a substrate is provided which includes exposing a substrate containing a barrier layer to a volatile reducing precursor to form a reducing layer during a soak process, exposing the reducing layer to a catalytic-metal precursor to deposit a catalytic ... 10/19/06 - 20060233953 - Apparatuses and methods for maskless mesoscale material deposition Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition ... 10/12/06 - 20060228476 - Method for depositing tin oxide and titanium oxide coatings on flat glass and the resulting coated glass A chemical vapor deposition process for laying down a tin or titanium oxide coating on a glass substrate through the use of an organic oxygen-containing compound and the corresponding metal tetrachloride. The organic oxygen compound is preferably an ester having an alkyl group with a β hydrogen in order to ... 10/12/06 - 20060228475 - Oxidation resistant coatings for ultra high temperature transition metals and transition metal alloys The invention provides oxidation resistant coatings for transition metal substrates and transition metal alloy substrates and method for producing the same. The coatings may be multilayered, multiphase coatings or gradient multiphase coatings. In some embodiments the transition metal alloys may be boron-containing molybdenum silicate-based binary and ternary alloys. The coatings ... 10/12/06 - 20060228474 - Leading edge components for high speed air and space craft A chemical vapor composite process for producing high purity, fully dense refractory ceramics in complex geometric shapes. Preferred products are suitable for leading edge protection of very high speed space and air craft. The process is derivative of conventional chemical vapor deposition, but is able to create ceramic articles that ... 10/12/06 - 20060228473 - Semiconductor-processing apparatus provided with self-cleaning device A CVD apparatus comprising an optical unit detecting the mass of contaminants adhering to an inner surface of a CVD reactor by irradiating an inner surface of the reactor with light having monochromaticity through an optical window provided on an inner wall of the reactor and receiving its reflected light ... 10/05/06 - 20060222771 - Methods for the reduction and elimination of particulate contamination with cvd of amorphous carbon A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seasoning, variable thickness of seasoning film, wider spacing, ... 10/05/06 - 20060222770 - Methods of depositing materials over substrates, and methods of forming layers over substrates The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber ... 10/05/06 - 20060222769 - Method for saturating a carrier gas with precursor vapor A system and method is disclosed for vaporizing a solid film precursor and transporting the film precursor vapor using a precursor valve system to control delivery. The film precursor vaporization system is positioned above and coupled to the process chamber. The precursor valve system, coupled to the film precursor vaporization ... 10/05/06 - 20060222768 - Method and system for precursor delivery A method for precursor delivery includes transferring a precursor vapor from a precursor vaporization system to an intermediate precursor chamber, collecting the precursor vapor in the intermediate precursor chamber, flowing a process gas containing the collected precursor vapor to a process chamber, and exposing a substrate in the process chamber ... 10/05/06 - 20060222767 - Production device for multiple-system film and coating tool for multiple-system film A production device and a method produce a multicomponent film containing metal components such as TiAlN having greatly different melting points by a melting-evaporation type ion plating method which has high material use efficiency and provides a good film quality. For this end, electric power required to evaporate material (4) ... 09/28/06 - 20060216419 - Sublimation bed employing carrier gas guidance structures Preferred embodiments of the present invention provides a sublimation system employing guidance structures including certain preferred embodiments having a high surface area support medium onto which a solid source material for vapor reactant is coated. Preferably, a guidance structure is configured to facilitate the repeated saturation of the carrier gas ... 09/28/06 - 20060216418 - Formation of silicon nitride film Disclosed is a method of forming a silicon nitride film which can form a silicon nitride film having a high film stress at a low process temperature. The method includes the steps of (a) supplying dichlorosilane into a reaction chamber containing a process object, thereby allowing chemical species originated from ... 09/28/06 - 20060216417 - System for control of gas injectors A substrate processing system has computer controlled injectors. The computer is configured to adjust a plurality of injectors, such as during deposition of a graded layer, between depositions of two different layers, or between deposition and chamber clean steps. ... 09/28/06 - 20060216416 - Methods for controlling formation of deposits in a deposition system and deposition methods including the same A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer ... 09/21/06 - 20060210712 - Method of depositing thin film on substrate using impulse ald process Provided is a method of depositing a thin film on a substrate using an impulse feeding process. The method includes performing a second reaction gas continuous feeding process of continuously feeding a second reaction gas into a chamber in which the substrate is installed, and performing a number of times, ... 09/14/06 - 20060204659 - Method for manufacturing absorber layers for solar cell The present invention relates to a process for producing CuInSe2 and CuIn1XGa,Se2 thin films used as an absorption layer for a solar cell such that they have a structure near to chemical equivalence ratio. The present invention provides a process for producing a thin film for a solar cell, comprising ... 09/07/06 - 20060198955 - Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature ... 08/31/06 - 20060193983 - Apparatus and methods for plasma vapor deposition processes One aspect of the invention is directed toward a method of forming a conductive layer on a microfeature workpiece. In one embodiment, the method comprises depositing an electrically conductive material onto a first microfeature workpiece in a vapor deposition process by flowing a gas into a plasma zone of a ... 08/31/06 - 20060193982 - Method of painting thermoplastic substrate Methods for combining conductive filled low surface energy substrates, such as but not limited to polyolefins, and flame applied nitrogen based coupling agents are described. The methods include adding a conductive material to a surface and or matrix of the thermoplastic substrate so as to form a conductive thermoplastic substrate ... 08/31/06 - 20060193981 - Apparatus and method for masking vapor phase aluminide coating to achieve internal coating of cooling passages The present invention is an apparatus for masking an exterior dovetail surface of a turbine airfoil for use in coating a turbine airfoil, wherein the apparatus comprises a turbine airfoil. The apparatus comprises a plurality of dovetail graphite sponge boot sections. The boot comprises a first interior surface assembled to ... 08/31/06 - 20060193980 - Method for forming film The present invention relates to a method of forming a metal-nitride film onto a surface of an object to be processed in a processing container in which a vacuum can be created. The method of the invention includes: a step of continuously supplying an inert gas into a processing container ... 08/17/06 - 20060182885 - Preparation of metal silicon nitride films via cyclic deposition wherein in the above formula R1-4 are same or different and independently selected from the group consisting of alkyl, vinyl, allyl, phenyl, cyclic alkyl, fluoroalkyl, silylalkyls. ... 08/17/06 - 20060182884 - Volatile copper(i) complexes for deposition of copper films by atomic layer deposition The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process. ... 08/10/06 - 20060177580 - Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber ... 08/10/06 - 20060177579 - Method for manufacturing semiconductor device Disclosed are PEALD (plasma-enhanced atomic layer deposition) apparatus and PEALD method for manufacturing a semiconductor device, the PEALD apparatus comprising: a housing including a reaction chamber in which a deposition reaction is performed; a rotary disk unit installed in the housing and provided with a plurality of susceptors for receiving ... 08/10/06 - 20060177578 - Feeding particulate material to a heated surface A method for the vaporization of particulate material includes providing one or more containers each containing possibly distinct particulate materials each having at least one component, fluidizing the particulate material in at least one of the containers, and providing a vaporization zone that is thermally isolated from at least one ... 08/10/06 - 20060177577 - Processes for the production of organometallic compounds This invention relates to processes for the production of organometallic compounds represented by the formula M(L)3 wherein M is a Group VIII metal, e.g., ruthenium, and L is the same or different and represents a substituted or unsubstituted amidinato group or a substituted or unsubstituted amidinato-like group, which process comprises ... 08/10/06 - 20060177576 - Controllably feeding organic material in making oleds A method for metering powdered or granular material onto a heated surface to vaporize such material, includes providing a container with powdered or granular material having at least one component; providing a rotatable auger disposed in material receiving relationship with the container for receiving powdered or granular material from the ... 08/10/06 - 20060177575 - Method of manufacturing gas barrier film coated plastic container A method of manufacturing a gas barrier film coated plastic container with high gas-barrier properties by solving a problem in a conventional method wherein the formation of a gas barrier film is obstructed by water molecules adsorbed in the plastic container and the container with reduced gas-barrier properties is manufactured. ... 08/03/06 - 20060172068 - Deposition of multilayer structures including layers of germanium and/or germanium alloys A chemical vapor deposition (CVD) process for preparing multilayer structures including Ge or a Ge-containing layer for use in electrical, optical and photovoltaic applications. A preferred Ge precursor is isobutylgermane. The multilayer structures include structures having a layer of Ge formed from isobutylgermane and structures having a layer of SiGe ... 08/03/06 - 20060172067 - Chemical vapor deposition of chalcogenide materials A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including ... 07/27/06 - 20060165893 - Thermal barrier coating protected by alumina and method for preparing same A thermal barrier coating for an underlying metal substrate of articles that operate at, or are exposed to, high temperatures, as well as being exposed to environmental contaminant compositions. This coating comprises an optional inner layer nearest to the underlying metal substrate comprising a non-alumina ceramic thermal barrier coating material ... 07/27/06 - 20060165892 - Ruthenium containing layer deposition method An exemplary apparatus and method of forming a ruthenium tetroxide containing gas to form a ruthenium containing layer on a surface of a substrate is described herein. The method and apparatus described herein may be especially useful for fabricating electronic devices that are formed on a surface of the substrate ... 07/27/06 - 20060165891 - Sicoh dielectric material with improved toughness and improved si-c bonding, semiconductor device containing the same, and method to make the same A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms ... 07/27/06 - 20060165890 - Method and apparatus for monolayer deposition (mld) An adaptive real time thermal processing system is presented that includes a multivariable controller. The method includes creating a dynamic model of the MLD processing system and incorporating virtual sensors in the dynamic model. The method includes using process recipes comprising intelligent set points, dynamic models, and/or virtual sensors. ... 07/27/06 - 20060165889 - Method for depositing nitride film using chemical vapor deposition apparatus of single chamber type The present invention relates to a method for depositing a nitride film using a chemical vapor deposition apparatus of single chamber type, and more particularly to a method for depositing a nitride film that is capable of depositing the nitride film in which an area of the nitride film at ... 07/20/06 - 20060159847 - Method and apparatus for low temperature dielectric deposition using monomolecular precursors In one aspect, the present invention provides a method and apparatus configured to form dielectric films or layers at low temperature. In one embodiment dielectric films such as silicon nitride (SixNy) and silicon dioxide (SiO2) are deposited at temperatures equal to or below 550° C. In a further aspect of ... 07/13/06 - 20060153985 - High throughput surface treatment on coiled flexible substrates One or more substrates may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The one or more coiled substrates are placed in a treatment chamber where substantially an entire surface of the one or more coiled ... 07/06/06 - 20060147628 - Controlling effusion cell of deposition system In a method of controlling an effusion cell in a deposition system, including a crucible, a guiding pathway and an injection nozzle, a guiding pathway and an injection nozzle are heated. The crucible is heated after heating the guiding pathway and the injection nozzle. In addition, in cooling the effusion ... 07/06/06 - 20060147627 - Method of forming a metal oxide thin film This invention may provide a method and apparatus for forming a metal oxide thin film which is capable of forming metal oxide thin films of diverse kinds including, in particular, a compound metal oxide thin film comprising different kinds of metal by utilizing the ALD method without affecting the film ... 07/06/06 - 20060147626 - Method of pulsing vapor precursors in an ald reactor A method of growing a thin film on a substrate by pulsing vapor-phase precursors material into a reaction chamber according to the ALD method. The method comprises vaporizing at least one precursor from a source material container maintained at a vaporising temperature, repeatedly feeding pulses of the vaporized precursor via ... 07/06/06 - 20060147625 - Method and device for the cvd coating of workpieces A method and a device for CVD coating of a workpiece is disclosed. In an embodiment of the method for CVD coating, in particular for aluminizing at least one workpiece, a coating gas which serves to coat the workpiece or each workpiece is created. The workpieces to be coated are ... 06/29/06 - 20060141152 - Cvd apparatus and manufacturing method of semiconductor device using the same The present invention has been made in an effort to provide a CVD apparatus and a method of manufacturing a semiconductor device using the same having advantages of providing a precursor supplying apparatus that can prevent defects and/or contamination by source material-based contaminants that may result from certain operations performed ... 06/22/06 - 20060134331 - Atomic layer deposition of copper using surface-activation agents The present invention relates to a novel atomic layer deposition process for the formation of copper films on substrates or in or on porous solids in an atomic layer deposition process. ... 06/22/06 - 20060134330 - Cluster tool architecture for processing a substrate Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. ... 06/22/06 - 20060134329 - Method of forming a porous metal catalyst on a substrate for nanotube growth A method is provided for forming a porous metal catalyst (44) on a substrate (42) for nanotube (84) growth in an emissive display. The method comprises depositing a metal (44) onto a surface of a substrate (12) at an angle (Θ) to the surface, depositing a metal catalyst (72) onto ... 06/15/06 - 20060127576 - Method and process reactor for sequential gas phase deposition by means of a process and an auxiliatry chamber In a process chamber of a process reactor, a sequential gas phase deposition (ALD, atomic layer deposition) of two or more precursors fed in by means of process gases is controlled. The process chamber is connected to an auxiliary chamber for a change of precursor and so the precursor to ... 06/08/06 - 20060121197 - Method for silane coating of indium tin oxide surfaced substrates A process for the coating of substrates which are at least partially coated with indium tin oxide comprising insertion of a substrate into a process oven, dehydration of the substrate, plasma cleaning of the substrate, vaporizing chemicals in one or more vapor chambers, and transfer of the vaporized chemicals into ... 06/08/06 - 20060121196 - Cvc process with coated substrates A method for forming, within a reactor having a work zone of at least one cubic meter, composite articles, particularly ceramic composite articles, for high temperature applications. The invention provides composite articles formed from the deposition as a solid matrix on hot surfaces of a chemical vapor having entrained solid ... 06/08/06 - 20060121195 - Plasma processing apparatus and method for manufacturing electrostatic chuck An electrostatic chuck comprising an insulating base 6, a plurality of conductive aluminum thin films 4a, 4b deposited on the surface of the base, and alumite films 2a, 2b formed by anodizing the surfaces of the conductive thin films 4a, 4b, wherein the conductive thin films 4a, 4b are each ... 06/08/06 - 20060121194 - Method for cleaning a deposition chamber A method for cleaning a deposition chamber of a hot-wall CVD system includes the steps of cleaning the inner s surface of the wall of the deposition chamber and depositing silicon oxide on the inner surface to fill the cracks formed on the inner surface of the wall, which is ... 06/08/06 - 20060121193 - Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate (5), which is situated inside a process chamber (2) of a reactor (1) while being supported by a substrate holder (4). The layer is comprised of at ... 06/08/06 - 20060121192 - Liquid precursor refill system Liquid precursor refill systems of the type typically used in the semiconductor industry. A remote precursor reservoir and a secondary vapor delivery system provide a CVD precursor to a local source. The local source contains a heat transfer means and a local CVD precursor reservoir. A delivery line connects this ... 06/08/06 - 20060121191 - Method for coating motor vehicle rims The invention relates to a method for coating motor vehicle rims, which consist in particular of a light alloy. According to the method: the rim is first provided with a primer of powder coating or wet lacquer that compensates any irregularities; the primer is then covered with a coating that ... 06/01/06 - 20060115595 - Organometallic compounds Compositions useful in the manufacture of compound semiconductors are provided. Methods of manufacturing compound semiconductors using these compositions are also provided. ... 06/01/06 - 20060115594 - Apparatus for the efficient coating of substrates including plasma cleaning A process for the coating of substrates comprising insertion of a substrate into a process oven, plasma cleaning of the substrate, dehydration of the substrate, withdrawal of a metered amount of one or more chemicals from one or more chemical reservoirs, vaporizing the withdrawn chemicals in one or more vapor ... 06/01/06 - 20060115593 - Method for preparing solid precursor tray for use in solid precursor evaporation system In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using ... 06/01/06 - 20060115592 - Extrusion die coating method Apparatus and a method for selectively vapor-coating an extrusion die to extrude honeycombs with desired distributions of web thicknesses, wherein at least one perforated impedance or preferential coating plate with a desired pattern of holes is positioned adjacent to, but spaced apart from, a face of the extrusion die to ... 06/01/06 - 20060115591 - Pentaborane(9) storage and delivery A fluid storage and dispensing system comprising a vessel for holding a pentaborane(9)-containing fluid at subatmospheric pressure. The fluid storage and dispensing system may be communicatively connected to a semiconductor or liquid crystal display manufacturing facility, whereby the pentaborane(9) is used as a substitute for commercially available boron hydride compounds ... 06/01/06 - 20060115590 - Method and system for performing in-situ cleaning of a deposition system A method for depositing metal layers, such as Ruthenium, on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a metal carbonyl precursor in a deposition system, and depositing a metal layer from the metal carbonyl on a substrate. The TCVD process utilizes a short residence time ... 06/01/06 - 20060115589 - Method and system for measuring a flow rate in a solid precursor delivery system Improved measurement accuracy for determining the flow rate of precursor vapor to the deposition tool, particularly for use with low vapor pressure precursors, such as ruthenium carbonyl (Ru3(CO)12) or rhenium carbonyl (Re2(CO)10). In one embodiment, the system includes a differential pressure manometer is provided for measuring the flow rate. A ... 06/01/06 - 20060115588 - System and method of fabrication and application of thin-films with continuously graded or discrete physical property parameters to functionally broadband monolithic microelectronic optoelectronic/sensor/actuator device arrays A system and method are provided to fabricate thin-films having different physical property parameters or having physical property parameters that continuously change across functionally broadband monolithic device arrays. The fabrication method deposits the thin-film including layers on a substrate of a monolithic chip. The method defines a desired gradient profile ... 05/25/06 - 20060110534 - Methods and apparatus for forming a titanium nitride layer A method of forming titanium nitride layers by an atomic layer deposition process using a batch-type vertical reaction furnace is described wherein the titanium nitride layers are formed on one or more substrates in accordance with a reaction between a first source gas including TiCl4 gas and a second source ... 05/25/06 - 20060110533 - Methods and apparatus for forming a titanium nitride layer A method of forming a titanium nitride layer by an atomic layer deposition process using a batch-type vertical reaction furnace is described wherein a first source gas including a titanium precursor is provided onto substrates loaded in a process chamber for a first time period; a first purge gas is ... 05/25/06 - 20060110532 - Coated inserts for wet milling The inserts are characterised by a WC—Co cemented carbide with a low content of cubic carbides and a highly W-alloyed binder phase and a coating including an inner layer of TiCxNy with columnar grains followed by a layer of κ-Al2O3 and a top layer of TiN. ... 05/25/06 - 20060110531 - Method for depositing a coating having a relatively high dielectric constant onto a substrate A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or ... 05/25/06 - 20060110530 - Method for increasing deposition rates of metal layers from metal-carbonyl precursors A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, ... 05/18/06 - 20060105107 - Reactor design for reduced particulate generation Particle formation in semiconductor fabrication process chambers is reduced by preventing condensation on the door plates that seal off the process chambers. Particles can be formed in a process chamber when reactant gases condense on the relatively cool surfaces of a door plate. This particle formation is minimized by heating ... 05/18/06 - 20060105106 - Tensile and compressive stressed materials for semiconductors A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The ... 05/18/06 - 20060105105 - High purity granular silicon and method of manufacturing the same A high-purity semiconductor grade granular silicon composition and methods for making the same are disclosed. Commercial quantities of the granular silicon can be produced by depositing silicon on silicon seeds in a first chemical vapor deposition (CVD)reactor, thereby growing the seeds into larger secondary seeds. Additional silicon is deposited on ... 05/18/06 - 20060105104 - Method for introducing gas to treating apparatus having shower head portion The present invention is a method of introducing a gas into a processing unit, the processing unit including a processing container and a showerhead part, the processing container having a processing space for conducting a predetermined process to an object to be processed, the showerhead part having a plurality of ... 05/11/06 - 20060099342 - Deposition of coatings An apparatus for coating substrates has a receptacle for a source of coating material and a plurality of mounts for substrate carriers arranged in a circle round the receptacle. ... 05/11/06 - 20060099341 - High frequency plasma jet source and method for irradiating a surface The invention relates to a high-frequency plasma beam source with a plasma chamber for a plasma, electrical means for applying an electrical voltage to the high-frequency plasma beam source to ignite and maintain the plasma, extraction means for extracting a plasma beam (I) from the plasma chamber as well as ... 05/11/06 - 20060099340 - Device and method for treating workpieces An apparatus and a method for the coating of hollow bodies, in particular for the internal coating of plastic drinks bottles by means of a PICVD is provided. The method ensures a flexible process sequence, a high throughput, an improved supply of fluid and a high-quality coating. The rotary apparatus ... 05/04/06 - 20060093741 - Material with surface nanometer functional structure and method of manufacturing the same The specification discloses a material with a surface nanometer functional structure and the method of manufacturing the same. Using the properties of supercritical fluids, a nanometer structure is formed on the surface of a substrate, resulting in a material with a surface nanometer functional structure. The supercritical fluid carries the ... 05/04/06 - 20060093740 - Method and device for manufacturing nanofilter media A method of manufacturing nanofilter media includes feeding catalyst nanoparticles into a reactor to attach the catalyst nanoparticles to microfilter media located in the reactor and serving as a substrate; feeding a source gas and a reactive gas onto the catalyst nanoparticles; and heating the reactor to synthesize and grow, ... 04/27/06 - 20060088661 - Methods for chemical vapor deposition of titanium-silicon-nitrogen films wherein m is an integer from zero to 4, n is an integer from 0 to 2, and m+n is no greater than 4; (iii) a compound comprising silicon in a vapor state; (iv) a reactant gas comprising nitrogen; and maintaining a temperature of the substrate in the chamber at ... 04/27/06 - 20060088660 - Methods of depositing lead containing oxides films Lead containing oxide thin films by Atomic Layer Deposition, comprising using a metal-organic lead compound, having organic ligands bonded to a lead atom by carbon-lead bonds, as a source material for the lead oxide. Stoichiometric PbTiO3 thin films with excellent uniformity can be deposited on substrates by ALD growth using, ... 04/20/06 - 20060083856 - Film deposition apparatus and film deposition method A particle film deposition apparatus and method are provided, with which ultra fine particles are generated by arc heating. The generated ultra fine particles can be efficiently sucked up into a transfer tube regardless of an arc voltage, and the resulting film can be stable in shape. An evaporation material ... 04/13/06 - 20060078679 - Metal nitride carbide deposition by ald The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of ... 04/13/06 - 20060078678 - Method of forming a thin film by atomic layer deposition Methods of forming a thin film by atomic layer deposition are disclosed. These methods generally include the steps of loading a substrate into a reaction chamber, and injecting a first source gas containing a first atom into the reaction chamber to form a chemical adsorption layer containing the first atom ... 04/13/06 - 20060078677 - Method to improve transmittance of an encapsulating film A method for depositing a carbon-containing material layer onto a substrate includes delivering a mixture of precursors for the carbon-containing material layer into a process chamber, doping the carbon-containing material layer with silicon, and depositing the carbon-containing material layer at low temperature. In one aspect, improved light transmittance of the ... 04/13/06 - 20060078676 - Porous low dielectric constant compositions and methods for making and using same A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with ... 04/13/06 - 20060078675 - Plasma-assisted enhanced coating Methods and apparatus are provided for igniting, modulating, and sustaining a plasma (615) for coating objects (250). In one embodiment, a method of coating a surface of an object (250) includes forming a plasma (615) in a cavity (230) by subjecting a gas to electromagnetic radiation in the presence of ... 04/06/06 - 20060073276 - Multi-zone atomic layer deposition apparatus and method Method and apparatus for producing a thin film on a substrate set in a moving substrate holder is disclosed. Within a deposition chamber, a substrate is moved across a series of dedicated deposition zones and is subjected to repeated surface reactions with at least two different reactants. The reactants are ... 04/06/06 - 20060073275 - Process and apparatus for producing single-walled carbon nanotube A solution prepared by dissolving an organic metal compound in an organic solvent is sprayed from a pore nozzle into a pre-heating furnace of 50 to 600° C. in a reaction furnace in a rare gas atmosphere of 500 Torr or less by pressurizing with an inert gas; a mixed ... 03/30/06 - 20060068106 - Methods for coating gemstones and other decorative objects The invention provides a decorative object comprising a transparent or translucent substrate having a body and at least one surface bearing a thin film coating. The coating imparts in the substrate a body color that appears substantially constant at different angles of observation. This body color is imparted in the ... 03/30/06 - 20060068105 - Film forming method and film forming apparatus A film forming apparatus by which property values in a film formed by the AD method can be improved. The film forming apparatus includes: a chamber having a substrate stage for holding a substrate on which a film is to be formed; an aerosol generating unit for generating an aerosol ... 03/30/06 - 20060068104 - Thin-film formation in semiconductor device fabrication process and film deposition apparatus A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing ... 03/30/06 - 20060068103 - Film forming method A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A ... 03/30/06 - 20060068102 - Organometallic precursor compounds This invention relates to organometallic precursor compounds represented by the formula (H)mM(R)n wherein M is a metal or metalloid, R is the same or different and is a substituted or unsubstituted, saturated or unsaturated, heterocyclic radical containing at least one nitrogen atom, m is from 0 to a value less ... 03/30/06 - 20060068101 - Film forming method A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A ... 03/30/06 - 20060068100 - Film forming method A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A ... 03/30/06 - 20060068099 - Grading prxca1-xmno3 thin films by metalorganic chemical vapor deposition The present invention discloses a method to achieve grading PCMO thin film for use in RRAM memory devices since the contents of Ca, Mn and Pr in a PCMO film can have great influence on its switching property. By choosing precursors for Pr, Ca and Mn having different deposition rate ... 03/30/06 - 20060068098 - Deposition of ruthenium metal layers in a thermal chemical vapor deposition process A method for depositing a Ru metal layer on a substrate is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas, a ruthenium-carbonyl precursor, and hydrogen. The method further includes depositing ... 03/30/06 - 20060068097 - method for forming a passivated metal layer A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium ... 03/30/06 - 20060068096 - Method of synthesising carbon nano tubes Method of synthesising carbon nano tubes (CNTs) on a catalyst layer formed on a support member, by catalytic deposition of carbon from a gaseous phase, whereby an ion beam is used prior to, during and/or after formation of said carbon nano tubes for modifying the physical, chemical and/or conductive properties ... 03/23/06 - 20060062917 - Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane In one embodiment, a method for forming a morphologically stable dielectric material is provided which includes exposing a substrate to a hafnium precursor, a silicon precursor and an oxidizing gas to form hafnium silicate material during a chemical vapor deposition (CVD) process and subsequently and optionally exposing the substrate to ... 03/23/06 - 20060062916 - Atomic layer deposition apparatus and method In an atomic layer deposition (ALD) apparatus and method, an ALD apparatus includes a reactor where reactions occur; a main purge line connected to the reactor and including a first main purge line, a second main purge line, and a selection valve installed at a connection portion between the first ... 03/23/06 - 20060062915 - Delivering particulate material to a vaporization zone A method for vaporizing particulate material and condensing it onto a surface to form a layer provides a quantity of first particulate material in a first container and a quantity of second particulate material in a second container spaced apart from the first container, the first and second containers respectively ... 03/23/06 - 20060062914 - Apparatus and process for surface treatment of substrate using an activated reactive gas An apparatus and process for treating at least a portion of the surface of a substrate is described herein. In one aspect, the apparatus a processing chamber comprising an inner volume, the substrate, and an exhaust manifold; an activated reactive gas supply source wherein a process gas comprising one or ... 03/23/06 - 20060062913 - Process for depositing btbas-based silicon nitride films A chemical vapor deposition (CVD) system comprises a tubular furnace, at least one BTBAS supply piping line connected to a base portion of the tubular furnace, an exhaust piping line connected to an upper portion of the tubular furnace, a bypass line connecting the BTBAS supply piping line with the ... 03/23/06 - 20060062912 - Bond coat for a thermal barrier coating system and related method thereof Method and Apparatus for efficiently applying a bond coat and related coating systems to a surface that can survive the thermal gradient that is encountered in very high temperature, high heat flux environments such as a rocket engine. An apparatus for efficiently applying coating systems using a vapor or cluster ... 03/16/06 - 20060057287 - Method of making chemical vapor composites A method for forming within a reactor having a work zone of at least one cubic meter, composite articles particularly ceramic composites articles, for high temperatur |