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Coherent Light Generators > Particular Active Media > Semiconductor > Injection > Monolithic Integrated > Laser Array > With Vertical Output (surface Emission) With Vertical Output (surface Emission)With Vertical Output (surface Emission) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.10/18/07 - 20070242719 - Optical manipulator illuminated by patterned organic microcavity lasers The present disclosure relates to an optical device and technique for manipulating microscopic objects. The device includes a support to locate microscopic objects. A laser array assembly that includes a plurality of organic laser devices generates an image onto the support via an objective lens. A control device controls the ... 09/20/07 - 20070217474 - Laser equipment A laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both ... 09/20/07 - 20070217473 - Laser equipment A laser equipment includes: a surface emitting laser for emitting an excitation light; a light converter for outputting an output light by receiving the excitation light; and a lens portion for collimating or concentrating a light. The surface emitting laser has an emitting surface for emitting the excitation light, and ... 09/20/07 - 20070217472 - Vcsel semiconductor devices with mode control A surface emitting laser having a substrate with top and bottom surfaces; a first stack of mirror layers of alternating indices of refraction located upon the top surface of the substrate; and active layer disposed over the first stack; a second stack of mirror layers of alternating indices of refraction ... 08/30/07 - 20070201525 - Vertical cavity surface emitting laser having strain reduced quantum wells A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. ... 08/23/07 - 20070195850 - Diode laser array stack A light generating apparatus is operably coupled to an optical fiber (10) with a cladding (5) and a core (4) defining a core diameter. The optical fiber (10) has a numerical aperture, and the product of the numerical aperture of the fiber and one-half the diameter of the core (4) ... 08/16/07 - 20070189350 - Surface emitting laser with an integrated absorber A surface emitting laser (SEL) with an integrated absorber. A lower mirror and an output coupler define a laser cavity of the SEL. A monolithic gain structure positioned in the laser cavity includes a gain region and an absorber, wherein a saturation fluence of the absorber is less than a ... 07/12/07 - 20070160102 - Vertically emitting, optically pumped semiconductor laser comprising an external resonator A vertically emitting semiconductor laser comprising an external resonator (7), a semiconductor body (1), and at least one pump radiation source (9). The semiconductor body (1) has a quantum layer structure (2) as an active zone comprising quantum layers (3) and barrier layers (4) lying in between. The semiconductor body ... 07/05/07 - 20070153867 - Semiconductor component and laser device A surface emitting semiconductor component (1) with an emission direction is disclosed, which comprises a semiconductor body (2). The semiconductor body comprises a plurality of active regions (4a, 4b) which are suitable for the generation of radiation and are spaced apart from one another, wherein between two active regions a ... 07/05/07 - 20070153866 - Manufacturable vertical extended cavity surface emitting laser arrays Arrays of vertical extended cavity surface emitting lasers (VECSELs) are disclosed. The functionality of two or more conventional optical components are combined into an optical unit to reduce the number of components that must be aligned during packaging. ... 07/05/07 - 20070153865 - Vertical cavity surface emitting laser A VCSEL which can be easily manufactured and can selectively suppress only high-order transverse mode oscillation is provided. The VCSEL includes a resonator, a first current confinement layer, and a second current confinement layer. The resonator includes an active layer having a light emitting region, and a pair of first ... 07/05/07 - 20070153864 - Lasers and methods associated with the same Laser structures and related methods are provided. The lasers may be formed of semiconductor materials with most (or all) of the components being formed on a unitary structure. The lasers may include a resonator separated from a light extraction region. ... 07/05/07 - 20070153862 - Manufacturable vertical extended cavity surface emitting laser arrays Arrays of vertical extended cavity surface emitting lasers (VECSELs) are disclosed. The functionality of two or more conventional optical components are combined into an optical unit to reduce the number of components that must be aligned during packaging. A dichroic beamsplitter selectively couples frequency doubled light out of the cavity. ... 07/05/07 - 20070153861 - Method of fabricating single mode vcsel for optical mouse A surface emitting laser having a substrate with top and bottom surfaces, a first stack of mirror layers of alternating indices of refraction located upon the top surface of the substrate and an active layer disposed over the first stack. The surface emitting layer also includes a second stack of ... 07/05/07 - 20070153860 - Sub-wavelength grating integrated vcsel A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index differential between the high and low index materials. By way ... 06/28/07 - 20070147458 - Cavity and packaging designs for arrays of vertical cavity surface emitting lasers with or without extended cavities Arrays of surface emitting lasers are disclosed. A top contact plate is patterned with apertures and used to form an electrical connection to a top surface of a laser die. The top contact plate reduces electrical resistance and improves current uniformity compared with conventional contacts formed by plating. ... 06/14/07 - 20070133642 - Vertical cavity surface emitting laser module having monitoring photodiode and method of fabricating the same Provided are a vertical cavity surface emitting laser (VCSEL) module providing accurate alignment between a VCSEL and a monitoring photodiode (MPD) for efficiently detecting light emitted by the VCSEL and a method of fabricating the VCSEL module. The VCSEL module includes: a first mirror layer, a first semiconductor conducting layer, ... 06/14/07 - 20070133641 - Surface-emitting type semiconductor laser and method for manufacturing the same A surface-emitting type semiconductor laser includes an upper mirror, a lower mirror, and an active layer disposed between the upper mirror and the lower mirror, and emits laser light in a direction of lamination of the lower mirror, the active layer and the upper layer, wherein at least one of ... 06/14/07 - 20070133640 - Vertical external cavity surface emitting laser with pump beam reflector Provided is a vertical external cavity surface emitting laser (VECSEL). The VECSEL includes: a semiconductor chip including an active layer emitting a beam having a predetermined wavelength and a reflection layer reflecting the beam generated from the active layer to the outside of the active layer; an external mirror that ... 05/31/07 - 20070121695 - Vertical-cavity surface-emitting laser (vcsel) device and the method of manufacturing thereof A Vertical-Cavity Surface-Emitting Laser (VCSEL) device includes a substrate, a first semiconductor multi-layer film of a first conductive type formed on the substrate, an active layer, a second semiconductor multi-layer film of a second conductive type, an electrode pad electrically coupled to the second semiconductor multi-layer film, and a post ... 05/31/07 - 20070121694 - Surface emitting laser There is provided a novel surface emitting laser structure unnecessary to have multilayer mirrors in both of upper and lower sides of an active layer. A surface emitting laser comprises a two-dimensional periodic structure which is comprised of an active material having a gain in a specific wavelength band of ... 05/24/07 - 20070116078 - High efficiency second harmonic generation vertical external cavity surface emitting laser A vertical external cavity surface emitting laser (VECSEL) in which the full-width at half maximum (FWHM) of laser light is reduced by two etalon filter layers to improve the efficiency of second harmonic (SHG) crystal is provided. The VECSEL includes: a laser chip for generating laser light; a first etalon ... 05/10/07 - 20070104241 - Vertical external cavity surface emitting laser with pump beam reflector A vertical external cavity surface emitting laser (VECSEL) using end pumping in which a pumping beam is recycled using a pumping beam reflection layer to increase pumping beam absorption is provided. The VECSEL includes: an active layer for generating and emitting signal light; an external mirror that is separated from ... 04/26/07 - 20070091966 - Semiconductor light-emitting device and method of manufacturing the same A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to ... 04/26/07 - 20070091965 - Vertical-cavity surface-emitting semiconductor laser device A vertical-cavity surface-emitting (VCSEL) device has a layer structure including a top DBR mirror, an active layer, a current confinement oxide layer, and a bottom DBR mirror, the layer structure being configured as a mesa post. The current confinement oxide layer has a central current injection area and a peripheral ... 04/26/07 - 20070091964 - Surface-emitting semiconductor laser component and optical projection apparatus with a surface-emitting semiconductor laser component such as this A surface-emitting semiconductor laser component is disclosed, having a resonator (3, 9), a semiconductor body (5) which comprises a layer sequence (4) which is intended for radiation production, a transparent, frequency-selective thermally conductive element (6) which makes thermal contact with a surface (5a) of the semiconductor body (5) through which ... 04/26/07 - 20070091963 - Optical element and method for manufacturing the same An optical element includes: a substrate; a surface-emitting type semiconductor laser that is provided on the substrate and emits laser light in a direction orthogonal to a surface of the substrate; a rectification element that is provided on the substrate and connected in parallel with the surface-emitting type semiconductor laser, ... 04/26/07 - 20070091962 - Substrate for vertical cavity surface emitting laser ( vcsel) and method for manufacturing vcsel device The present invention provides a substrate for a VCSEL that improves reliability and yield. A substrate for VCSEL includes multiple element regions separated by an element dividing region that is scribed or diced. In each element region, a light emitter that emits laser light in a direction perpendicular to the ... 04/26/07 - 20070091961 - Method and structure for low stress oxide vcsel The etched sidewalls of laterally oxidized VCSEL structures are coated with a dielectric film to inhibit oxidation of the DBR layers during the oxidation process. While oxidation of the DBR mirror layers is not completely eliminated, the number of DBR mirror layers that are oxidized is significantly reduced, thereby reducing ... 04/26/07 - 20070091960 - High power top emitting vertical cavity surface emitting laser A laser device including a VCSEL array provides an increased power density at a high wall-plug efficiency in that the lateral design parameters are appropriately selected on the basis of a relationship that has been established for a specified vertical design, a corresponding process technology and specified operating conditions. Thus, ... 04/26/07 - 20070091959 - Optimizing the increased oxide aperture relative to the laser dimensions The present invention provides a VCSEL device (100) and a method of fabricating the same, wherein two or more characteristic device dimensions (DM, DP) are correlated with each other so as to optimise single mode emission, while at the same time significantly providing an increased oxide aperture (DOX) compared to ... 03/29/07 - 20070071056 - Laser ranging with large-format vcsel array The present invention relates to laser ranging and detection by sequentially emitting a plurality of beams from a vertical-cavity surface-emitting laser (VCSEL) structure, re-directing the beams through optical elements such that they are fanned out over the region of view, and detecting any beams that may be reflected by objects ... 03/15/07 - 20070058688 - End pumping vertical external cavity surface emitting laser A vertical external cavity surface emitting laser (VECSEL) is provided, in which the incident loss of a pumping beam is reduced. The VECSEL device comprising: a transparent substrate; an optical pump radiating a pumping beam onto a first surface of the transparent substrate; a first anti-reflection coating (ARC) layer formed ... 03/08/07 - 20070053399 - Vertical cavity surface emitting laser including trench and proton implant isolation A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. ... 02/22/07 - 20070041416 - Tunable long-wavelength vcsel system A vertical cavity surface emitting laser system is provided including providing a epitaxially grown bottom spacer layer, an active layer on the epitaxially grown bottom spacer layer, a top spacer layer on the active layer, and etching a part of the epitaxially grown top spacer layer on a side opposite ... 02/08/07 - 20070030874 - Surface-emitting laser element and laser module using the same A cavity is formed by a lower multilayer mirror and an upper multilayer mirror and an active layer is arranged between the lower multilayer mirror and the upper multilayer mirror in a surface-emitting laser element. A relaxation oscillation frequency at a bias point in the cavity is set to exceed ... 02/01/07 - 20070025408 - Long-wavelength vcsel system with implant current confinement The present invention provides a long-wavelength VCSEL system providing a buried layer, growing a top spacer layer on the buried layer, forming an active layer on the top spacer layer, and creating a current confinement structure in the buried layer with a post epitaxy ion implantation. ... 02/01/07 - 20070025407 - Long-wavelength vcsel system with heat sink A long-wavelength VCSEL system is provided including providing a bottom mirror, a heat sink surrounding the bottom mirror, a wafer on the bottom mirror and the heat sink, and a backside contact on the wafer on a side opposite the bottom mirror. ... 01/25/07 - 20070019699 - Light emitting device and method of manufacture A light emitting device is manufactured by forming a light emitting structure upon a buffer layer formed on a substrate. The light emitting structure is then separated from the buffer layer and the substrate. A light-directing element such as a mirror or a lens is then attached to the light ... 12/07/06 - 20060274805 - High thermal conductivity vertical cavity surface emitting laser (vcsel) A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced ... 11/30/06 - 20060268955 - Vertical structure semiconductor light emitting device and method for manufacturing the same The invention provides a high-quality vertical semiconductor light emitting device having fewer cracks and a manufacturing method thereof. In the vertical semiconductor light emitting device, an Si—Al alloy substrate is prepared. Then a p-type group III-V compound semiconductor layer is formed on the Si—Al alloy substrate. An active layer is ... 10/12/06 - 20060227838 - Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatus A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in ... 10/12/06 - 20060227837 - Quantum dot vertical cavity surface emitting laser and fabrication method of the same A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed ... 10/12/06 - 20060227836 - Surface emitting semiconductor laser array and optical transmission system using the same A surface emitting semiconductor laser array includes multiple light-emitting portions arranged in a one-dimensional or two-dimensional array, each of the light-emitting portions including, on a substrate, an active region and a current funneling portion between first and second reflection mirrors, and a light-emission aperture above the second reflection mirror, laser ... 10/12/06 - 20060227835 - Surface-emitting laser diode with tunnel junction and fabrication method thereof A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction ... 08/03/06 - 20060171437 - Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than ... 07/06/06 - 20060146904 - Integrated light emitting device and photodiode with ohmic contact Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting, device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode ... 06/15/06 - 20060126696 - Method for producing an oxide confined semiconductor laser A method for producing an oxide confined semiconductor laser uses a dual platform to synchronously produce a light emitting active area and a wire bonding area on a semiconductor material and use a metal protective material, an electrically conductive metal material, and a dielectric material together with an etching process, ... 06/15/06 - 20060126695 - Optical element, optical module, and optical transmission device An optical element includes a substrate, a surface-emitting type semiconductor laser that is provided above the substrate and includes a first mirror, an active layer and a second mirror formed in this order from the substrate side, a first optical detection section formed above the substrate, a second optical detection ... 06/15/06 - 20060126694 - Hybrid metal bonded vertical cavity surface emitting laser and fabricating method thereof Provided is a method of fabricating a vertical cavity surface emitting laser among semiconductor optical devices, comprising: bonding a dielectric mirror layer to an epi-structure having a mirror layer and an active layer; bonding these on a new substrate using a metal bonded method; removing the existing substrate; and fabricating ... 06/08/06 - 20060120426 - Surface emitting semiconductor laser and communication system using the same A surface emitting semiconductor laser includes a laminate of semiconductor layers emitting multimode laser light, and a block member blocking light of a specific mode among the multimode laser light emitted from the laminate. ... 05/18/06 - 20060104328 - Method for measuring vcsel reverse bias leakage in an optical module Reverse bias leakage testing may be used to determine the health of a vertical cavity surface emitting laser (VCSEL). When VCSELs are integrated on a die with other electronic devices such testing may damage the other electronic devices or be prohibited by circuits on the die designed to protect the ... 05/18/06 - 20060104327 - Semiconductor optical pumping device for radiation emission and the production method thereof An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically integrated. The pump radiation source (20) generates pump radiation (2) for ... 05/11/06 - 20060098706 - Surface-emitting type semiconductor laser To provide a surface-emitting type semiconductor laser that is capable of emitting a laser beam with a narrower radiation angle. A surface-emitting type semiconductor laser in accordance with the present invention includes: a substrate 110; a first mirror 142 provided above the substrate 110; an active layer 144 provided above ... 05/11/06 - 20060098705 - Nano-vcsel device and fabrication thereof using nano-colonnades A nano-colonnade VCSEL device and a method of fabrication utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a first layer to another horizontal surface of a second layer to connect the layers. The VCSEL device includes a first layer having the (111) horizontal surface; a ... 04/20/06 - 20060083283 - Surface-emitting laser, method for manufacturing surface-emitting laser, device and electronic apparatus Surface-emitting lasers are provided that can reduce the laser emission angle. Methods for manufacturing the surface-emitting lasers, devices and electronic apparatuses are also provided. The surface-emitting laser has a lens layer formed from semiconductor having a lens shape, that is a component of a resonator of the surface-emitting laser, and ... 04/20/06 - 20060083282 - Surface-emitting laser, method for manufacturing surface-emitting laser, device and electronic apparatus Surface-emitting lasers are provided that can readily make highly accurate dimensions at the center axis of a resonator. A surface-emitting laser is characterized in that a lens layer in a convex lens shape having an apex portion that is flat is disposed on one end portion of a resonator. ... 04/13/06 - 20060078027 - Laser pumping unit and high power laser device tunnel junction including the same Embodiments include a laser pumping unit and a high power vertical external cavity surface emitting laser (VECSEL) device including the same. The laser pumping unit easily diffuses current in a traverse direction by using a tunnel junction. The laser pumping unit may include a substrate, a lower distributed brag reflector ... 04/13/06 - 20060078026 - Alas/gaas alloy to enhance n-type doping in algaas distributed bragg reflector Distributed Bragg reflector (DBR) with reduced DX centers. A DBR includes an AlAs region. The AlAs region includes essentially homogeneous AlAs. The DBR further includes a AlGaAs region. The AlGaAs region includes alternating thin layers of AlAs and GaAs. The alternating thin layers of AlAs and GaAs are arranged such ... 03/16/06 - 20060056476 - Laser diode with corner reflector having emission window A laser diode includes: a reflection layer, an active layer, and a corner reflector which has a shape approximately corresponding to a portion of a cone or pyramid, and is arranged above the active layer with vertex up so that the corner reflector and the reflection layer realize a resonator. ... 03/16/06 - 20060056475 - Method of manufacturing an inp based vertical cavity surface emitting laser and device produced therefrom A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the ... 01/19/06 - 20060013276 - Vcsel having an air gap and protective coating A VCSEL includes a gap in a mirror stack and a protective layer sealing an end of the gap. The gap defines a boundary of the aperture of the VCSEL without introducing the stresses that oxide regions in oxide VCSELs can cause, and the protective layer, which can be a ... 10/06/05 - 20050220160 - Vertical cavity surface emitting semiconductor laser device A vertical cavity surface emitting semiconductor laser (VCSEL) device has p-type and n-type DBRs sandwiching therebetween a resonant cavity including an active layer. Each the DBRs has a plurality of layer pairs each including a Alx1Ga1-x1As high-reflectivity layer and an Alx2Ga1-x2As low-reflectivity layer and an Alx3Ga1-x3As slope content layer interposed ... 08/18/05 - 20050180482 - Very low cost surface emitting laser diode arrays An array of semiconductor lasers on a single semiconductive die. The die includes a plurality of laser stripes optically coupled to a reflective surface. The laser stripes generate a plurality of laser beams traveling in a direction essentially parallel to a top surface of the die. The reflective surface redirects ... ### FreshPatents.com Support |