REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Coherent Light Generators > Particular Active Media > Semiconductor > Injection > Monolithic Integrated > With Diffraction Grating (bragg Reflector) With Diffraction Grating (bragg Reflector)With Diffraction Grating (bragg Reflector) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/08/07 - 20070258501 - Refined mirror structure for reducing the effect of feedback on a vcsel A VCSEL is provided that integrates an absorbing layer sandwiched within a null of the standing wave in the emitting mirror to reduce the reflectivity and transmissivity of the emitting mirror as seen by the feedback optical wave, with minimal effect on the reflectivity of the emitting mirror as seen ... 11/08/07 - 20070258500 - Light-emitting semiconductor component comprising a protective diode A light-emitting semiconductor component which contains a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5b) is formed. The pn junction (5a, 5b) is subdivided into a light-emitting section (7) and a protective-diode ... 09/20/07 - 20070217466 - Two-dimensional photonic crystal surface light emitting laser A surface-emitting laser according to the present invention includes a laminated body between a first electrode 471 and a second electrode 472. The laminated body includes an active layer 43 and a two-dimensional photonic crystal 45. The first electrode 471 is ring shaped. A voltage is applied between the first ... 08/23/07 - 20070195849 - Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating In a gain-coupled distributed feedback semiconductor laser, a coating of a low reflectivity is provided on a front facet from which laser light is emitted and a coating of a high reflectivity is provided on a rear facet, thus forming asymmetric coatings. The semiconductor laser has a structure in which ... 08/09/07 - 20070183471 - Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material A micropost microcavity device has a maximum field intensity at the center of a high-index spacer as well as a small mode volume. The device has an approximately half-wavelength thick low-index spacer [400] sandwiched between two quarter wave stacks [410, 420]. The low-index spacer has a high-index subspacer layer [470] ... 06/14/07 - 20070133639 - Semiconductor laser structure including quantum dot Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge ... 06/14/07 - 20070133638 - Coherent light source and optical device It is easy to increase output with a wide stripe laser, but the lateral mode is a multimode, and the coupling efficiency is low with a single-mode fiber or a single-mode waveguide, creating problems in terms of application to devices of high coherence. In view of this, the light emitted ... 06/07/07 - 20070127536 - Semiconductor having enhanced carbon doping Semiconductors with enhanced strain. One embodiment includes a semiconductor device. The semiconductor device may include an epitaxial structure. The epitaxial structure includes one or more semiconductor layers and dielectric layers. One or more of the layers includes a dopant including small quantities of Al and repeated delta doping during expitaxial ... 06/07/07 - 20070127535 - Distributed bragg reflector (dbr) structure in vertical cavity surface emitting laser (vcsel) diode, method on manufacturing the same, and vcsel diode A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive ... 05/17/07 - 20070110115 - Surface emitting laser device A VCSEL device includes a polyimide having a larger thickness (d1) on the surface of a semiconductor layer structure in a peripheral area 54, which is separated from a mesapost by an annular groove 52. The top surface of the central mesapost 30 is located at a lower position compared ... 05/03/07 - 20070098032 - Polarization control in vertical cavity surface emitting lasers using off-axis epitaxy A polarization pinned long wavelength vertical cavity surface emitting laser (VCSEL). The VCSEL includes a III V semiconductor substrate. A bottom DBR mirror is formed on the semiconductor substrate. An active region is formed in an off-axis orientation on the bottom DBR mirror. The active region includes a surfactant that ... 04/05/07 - 20070076774 - Spatially-fed high-power amplifier with shaped reflectors A spatially-fed high-power amplifier comprises one or more shaped reflectors to reflect an initial wavefront, and an active array amplifier to amplify the reflected wavefront to generate a high-power planar wavefront. The shaped reflectors provide the reflected wavefront with substantially uniform amplitude when incident on the active array amplifier. The ... 03/29/07 - 20070071055 - Modulation light source, image display apparatus including the same, and method of driving modulation light source A modulation light source capable of maintaining thermal stability of a gain part is provided. A modulation light source includes a DBR laser having a DBR part, a phase part and a gain part, a light wavelength conversion device that receives a fundamental wave from the DBR laser and from ... 02/22/07 - 20070041415 - Wavelength tunable distributed bragg reflector (dbr) laser The present invention is to provide a wavelength tunable DBR laser having the wider wavelength tuning characteristic, able to attain a 6 nm or more continuous wavelength shift and also higher in output power than a conventional wavelength tunable DBR laser. The DBR laser is constituted such that optical waveguides ... 02/22/07 - 20070041414 - Semiconductor laser showing reduced sensitivity to disturbances A semiconductor laser, contains at least one absorbing layer (8) in its laser resonator, said absorbing layer reducing the transmission TRes of the laser radiation (10) in the laser resonator for the purpose of decreasing the sensitivity of the semiconductor laser to disturbances created by radiation (9) fed back into ... 02/15/07 - 20070036189 - Vertical cavity surface emitting laser device A vertical cavity surface emitting laser device includes a first reflective mirror layer, a second reflective-mirror layer, and an active layer disposed therebetween, wherein at least one of the first reflective mirror layer and the second reflective mirror layer includes a periodic-refractive-index structure in which the refractive index periodically changes ... 02/15/07 - 20070036188 - Semiconductor laser, optical element, laser device, and method of controlling semiconductor laser A semiconductor laser has a first diffractive grating area. The first diffractive grating area has a plurality of segments. Each segment has a first area including a diffractive grating and a second area that is space area combined to the first area. Optical lengths of at least two of the ... 02/15/07 - 20070036187 - High power vertical external cavity surface emitting laser Provided is a vertical external cavity surface emitting laser (VECSEL) including: a bottom DBR mirror formed on a substrate; an RPG layer formed on the bottom DBR layer; a capping layer formed on the RPG mirror; an optical pump irradiating a pump beam onto a surface of the capping layer; ... 02/15/07 - 20070036186 - Nitride semiconductor vertical cavity surface emitting laser In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride ... 02/08/07 - 20070030873 - Polarization control in vcsels using photonics crystals An optical device including a polarization control photonic crystal. The optical device includes a vertical cavity surface emitting laser. The optical device further includes a lower mirror formed on a substrate. The optical device also includes an upper mirror. An active region is between the lower mirror and the upper ... 01/25/07 - 20070019697 - Vcsel system with transverse p/n junction The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and forming a transverse p/n junction laterally to the integrated multiple gain regions, wherein forward biasing the transverse p/n junction causes photon ... 01/04/07 - 20070002917 - Electro-absorption modulator integrated with a vertical cavity surface emitting laser An electro-absorption modulator integrated with a vertical cavity surface emitting laser (VCSEL). An electro-absorption modulator (EAM) is integrated or grown on a VCSEL. The electro-absorption modulator may be separated from the VCSEL by a semi-insulating or nonconducting layer. Contacts on the EAM can bias the EAM such that light emitted ... 12/28/06 - 20060291516 - Optical semiconductor device and optical module using thereof The invention aims at realizing a 1300-nm-band direct modulation laser, having a single lateral mode, in which a chip light power of several milliwatts and a low current operation are simultaneously realized. Also, the invention aims at realizing a laser light source excellent in economy as well by realizing output ... 12/28/06 - 20060291515 - High power vertical external cavity surface emitting laser An improved VECSEL device is provided in which the gain of each of the quantum well layers can be increased in a periodic gain structure. A vertical external cavity surface emitting laser (VECSEL) device comprising: a substrate; a bottom DBR mirror formed on the substrate; a multiple quantum well layer ... 10/12/06 - 20060227834 - Member having antireflection structure A reflection of unnecessary light, which should be prevented, can be suppressed, and occurrence of stray light can be reduced using a member having an antireflection structure, comprising a plate-like portion 2, and an aperture portion 3 formed in the plate-like portion 2, wherein the antireflection structure having an aspect ... 10/05/06 - 20060222033 - Optical semiconductor device and driving method thereof Objects are achieved by an optical semiconductor device comprising: a structure 61 including a substrate 50, a diffraction grating 52a, an active layer 54 and a refractive index control layer 60; and an laser element 100 including an electrode 92a for the active layer, an electrode 92b for the refractive ... 09/28/06 - 20060215720 - Quantum cascade laser with grating formed by a periodic variation in doping Doped diffraction gratings for use in quantum cascade lasers and mid-infrared wavelength vertical cavity surface emitting lasers can be made by introducing periodic variations in the doping levels that result in periodic refractive index variations. Doping is typically accomplished by use of an n type dopant. ... 08/10/06 - 20060176924 - Semiconductor light emitting device having effective cooling structure and method of manufacturing the same A semiconductor light emitting device having a high heat emission efficiency and a method of manufacturing the same without reducing the light emission efficiency are provided. The semiconductor light emitting device includes a substrate, a thermal spreading layer formed on the substrate and patterned with predetermined gaps, a planarizing layer ... 06/29/06 - 20060140237 - Apparatus and method for providing a single-mode grating-outcoupled surface emitting laser with detuned second-order outcoupler grating An improved grating-outcoupled surface-emitting semiconductor laser architecture is provided. A second-order grating is placed between two distributed Bragg reflector gratings. The period of the second order grating is positively or negatively detuned from the distributed Bragg reflector selected optical wavelength at which the laser operates. Detuning of the second-order grating ... 09/29/05 - 20050213629 - Vertical cavity surface emitting laser diode having a high reflective distributed bragg reflector The present invention is to provide a vertical cavity surface emitting laser diode (VCSEL) that has a functional distributed Bragg reflector (DBR) comprised of less number of pairs of reflective layers. The VCSEL of the invention include a lower DBR, an upper DBR and an active layer arranged between the ... 08/18/05 - 20050180479 - Current biased dual dbr grating semiconductor laser Dual-wavelength operation is easily achieved by biasing the gain section. Multiple gratings spaced apart from each other are separated from an output aperture by a gain section. A relatively low coupling coefficient, κ, in the front grating reduces the added cavity loss for the back grating mode. Therefore, the back ... ### FreshPatents.com Support |