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Coherent Light Generators > Particular Active Media > Semiconductor > Injection > Monolithic Integrated Monolithic IntegratedMonolithic Integrated patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/08/07 - 20070258499 - Surface-emitting type semiconductor laser A surface-emitting type semiconductor laser includes: a first mirror; an active layer formed above the first mirror; a second mirror formed above the active layer; and a current constricting section formed above or below the active layer, wherein the second mirror has a plurality of concave sections arranged within a ... 10/11/07 - 20070237198 - Vertical-stacked coupled quantum-dot vertical cavity surface emitting laser A vertical-stacked coupled quantum-dot vertical cavity surface emitting laser includes a semiconductor substrate, a lower distributed Bragg reflector, a first wave guide layer, an emitting layer, a second wave guide layer and an upper distributed Bragg reflector. The emitting layer is formed by multiple Quantum-Dot Vertically Stacked layers, which are ... 08/02/07 - 20070177647 - Surface-emitting laser light source using two-dimensional photonic crystal The present invention intends to provide a surface-emitting laser light source capable of generating a linearly polarized laser light having a single-lobed beam profile that takes the largest intensity value in its central area. A two-dimensional photonic crystal consisting of a plate member 31 with holes 311 or 312 arranged ... 07/05/07 - 20070153859 - Single spatial mode output multi-mode interference laser diode with external cavity The invention relates to a conventional broad-area laser having a single-mode output through the phenomenon of multimode interference (MMI) in step-index waveguides. Another aspect of the present invention relates to a very robust multi-mode compound cavity laser design that is fully defined by the geometry and the refractive index profile ... 06/14/07 - 20070133637 - Optical semiconductor element and method for manufacturing the same An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; and an electrostatic breakdown protection element that is provided on an optical path of the laser light emitted from the surface-emitting type semiconductor laser, absorbs a portion of the laser light, and protects the surface-emitting type ... 06/07/07 - 20070127534 - Complex optical device The present invention provides a complex optical device capable of decreasing electric power consumption, generating a high quality laser, and modulating the laser without degradation. The complex optical device includes a laser diode element (LD) and an electroabsorption modulator element (EAM) which are formed on the same substrate and optically ... 06/07/07 - 20070127533 - Long-wavelength vertical cavity surface emitting lasers having oxide aperture and method for manufacturing the same Disclosed herein is a vertical cavity surface emitting laser device. The laser device comprises a semiconductor lower mirror layer, a first semiconductor electrode layer, a gain-activation layer and a semiconductor anode layer sequentially grown on the compound semiconductor substrate, a re-growth pattern formed on the semiconductor anode layer to a ... 05/17/07 - 20070110114 - Multisectional laser Disclosed is a semiconductor laser (10) in which the substrate (11) comprises at least three independent functional sections (17, 20, 23) in the direction of light wave propagation (A), said functional sections (17, 20, 23) serving different functions and being individually triggered by means of electrodes (15, 18, 21) via ... 04/19/07 - 20070086500 - Integrated optical semiconductor device and manufacturing method thereof A semiconductor laser device includes a semiconductor laser portion, a window layer structure portion, a first inter-element portion, and a pre-placed optical element portion on an InP substrate. The semiconductor laser portion includes an InGaAsP layer and an InP layer located on the InGaAsP layer. The window layer structure portion ... 03/29/07 - 20070071054 - Vertical cavity surface emitting semiconductor laser, light emission device, and optical transmission system A semiconductor laser is disclosed with which a VCSEL can be constituted with a simplified configuration for optical transmission at a transmission rate higher than 10 Gbps. The semiconductor laser includes a resonator including a first active region able to emit light in response to current injection and a second ... 02/08/07 - 20070030872 - Laser diode A laser diode which can be easily assembled at low material cost is provided. A first light emitting device having a laser structure on a substrate, a second light emitting device having laser structures on a substrate, and a support base are provided. The first light emitting device and the ... 02/01/07 - 20070025404 - Optical element and method for manufacturing the same An optical element includes a surface-emitting type semiconductor laser, a photodetector element that detects a part of laser light emitted from the surface-emitting type semiconductor laser, and a light-receiving element that receives laser light from outside. The photodetector element has a first photoabsorption layer formed above a substrate. The surface-emitting ... 12/21/06 - 20060285567 - Surface-emitting semiconductor laser array and optical transmission system using the same A surface emitting semiconductor laser includes a substrate, at least one light-emitting element on the substrate, and at least one protection element on the substrate. The light-emitting element includes a first semiconductor layer of a first conduction type electrically connected to a first electrode, and a second semiconductor layer of ... 10/12/06 - 20060227833 - Wavelength locked laser including integrated wavelength selecting total internal reflection (tir) structure An integrated light emitting semiconductor device having integrated feedback for wavelength locking comprises a semiconductor substrate including a waveguide region having a gain section having a gain media therein, and an out-coupling perturbation integrated with the device disposed proximate to the waveguide. A total internal reflection (TIR) structure for providing ... 10/05/06 - 20060222032 - Optical semiconductor element, method of manufacturing optical semiconductor element and optical module An InGaAsP thin film layer having the same index of refraction as a diffraction grating is inserted between a p-type InP clad layer and the diffraction grating composed of an InGaAsP layer. In this structure, the InGaAsP layer is present over an active layer, and the amount of thermal diffusion ... 08/24/06 - 20060187992 - Light-emitting device and optical integrated device In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in ½ of the intended wavelength. At least one of the two kinds of transparent substances ... 06/29/06 - 20060140236 - Semiconductor laser device and optical pick-up device using the same A semiconductor laser device includes, on a substrate: an active layer and two clad layers which sandwich the active layer; and a waveguide diverging region formed in a photonic crystal having a photonic band gap, where the waveguide diverging region diverges, in at least two directions, a waveguide region formed ... 06/15/06 - 20060126693 - Integrated semiconductor light source Provided is an integrated semiconductor light source using locking characteristic by an external light injection, including: an active region controlling an optical gain and an optical output by current injection; and a passive region having a structure integrated with the active region and moving a cavity mode by current injection ... 05/04/06 - 20060093006 - Surface emitting laser device and production method A surface emitting laser device is disclosed that is able to selectively add a sufficiently large loss to a high order transverse mode so as to efficiently suppress a high order transverse mode oscillation and to oscillate at high output in a single fundamental transverse mode. The surface emitting laser ... 04/06/06 - 20060072642 - Photonic crystal laser sensors and methods A sensor apparatus includes a laser optically coupled to a photonic crystal structure configured to provide an evanescent field through a sensed medium region such that the photonic crystal structure functions as a cavity/resonator for the laser. ... 02/23/06 - 20060039434 - Self-monitoring light emitting apparatus A self-monitoring light source is provided. The self-monitoring light source includes a light source that generates light and a light monitor that receives a portion of the generated light. The light source and the light monitor are manufactured on the same semiconductor die. ... 02/23/06 - 20060039433 - Silicon nanocrystal/erbium doped waveguide (snew) laser A rare earth-doped solid-state integrated laser which includes an optical waveguide, and a laser cavity including at least one subwavelength mirror. The subwavelength mirror is disposed in or on the optical waveguide. The optical waveguide portion within the laser cavity includes active media comprising both a rare earth and semiconducting ... 01/05/06 - 20060002444 - Long wavelength vertical cavity surface emitting lasers A vertical cavity surface emitting laser (VCSEL) includes independently definable current and optical confinement structures that provide unique forms of drive current and transverse mode confinement, respectively. The optical guide may be formed from an upper distributed Bragg reflector (DBR), as an etched mesa structure and/or as an intracavity optical ... 01/05/06 - 20060002443 - Multimode external cavity semiconductor lasers External cavity laser devices provide multimode laser operation by using a wavelength selective element that produces a spectral width profile able to support multiple longitudinal laser modes. The spectral width profile, for example, may have a substantially flat response across multiple longitudinal laser modes, such that no single mode predominates. ... 12/29/05 - 20050286589 - Vertical cavity surface emitting laser optimized for optical sensitivity A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench ... 12/29/05 - 20050286588 - Vertical cavity surface emitting laser with optimized linewidth enhancement factor A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench ... 12/29/05 - 20050286587 - Vertical cavity surface emitting laser optimized for thermal sensitivity A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench ... 12/29/05 - 20050286586 - Geometric optimizations for reducing spontaneous emissions in photodiodes An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The ... 12/29/05 - 20050286585 - Photodiode bandgaps for reducing spontaneous emissions in photodiodes An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The ... 12/29/05 - 20050286584 - Optical apertures for reducing spontaneous emissions in photodiodes An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The ... 12/29/05 - 20050286583 - Obsorbing layers for reduced spontaneous emission effects in an integrated photodiode An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The ... 12/22/05 - 20050281305 - Semiconductor based broad area optical amplifier An optical amplifier including: a photonic gain element; and, a transistor electromagnetically coupled to the gain element to inject current into the gain element responsively to the internal optical intensity of the gain element. ... 12/15/05 - 20050276298 - Tuneable unipolar lasers A unipolar semiconductor laser is provided in which an active region is sandwiched in a guiding structure between an upper and lower cladding layer, the lower cladding layer being situated on a semiconducting substrate. The unipolar semiconductor laser comprises a raised ridge section running from end to end between end ... 12/08/05 - 20050271107 - Semiconductor laser apparatus and manufacturing method thereof A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least ... 11/10/05 - 20050249256 - Wavelength switchable semiconductor laser A monolithically integrated wavelength switchable laser comprises three coupled Fabry-Perot cavities. The length and consequently the free spectral range of the first cavity are designed such that the resonant peaks correspond substantially to a set of discrete operating wavelengths separated by a constant channel spacing. The second cavity has a ... 10/27/05 - 20050238076 - Semiconductor laser apparatus and manufacturing method thereof A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first ... 10/20/05 - 20050232326 - Multi-level integrated photonic devices A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree ... 10/13/05 - 20050226299 - Vertical-cavity surface emitting laser diode The present invention provides a VCSEL (vertical-cavity surface emitting laser) diode, in which a p-type cladding layer is formed on an active layer and surrounded with an insulation edge. An annular p-type electrode is formed on the ptype cladding layer close to the insulation edge and an upper DBR mirror ... 10/13/05 - 20050226298 - Power conversion device A large amount of heat generation is incidental to conventional power conversion devices due to large ion voltage of a diode element rectifying AC power to DC power. Moreover, in the heat generation, power generation operation has to be stopped to prevent burnout of the diode element, resulting in restriction ... 09/01/05 - 20050190808 - Optoelectric composite substrate and method of manufacturing the same An optoelectric composite substrate of the present invention includes an insulating film, an optical waveguide embedded in the insulating film in a state that an upper surface is exposed from the insulating film, a via hole formed to pass through the insulating film, a conductor formed in the via hole, ... 08/25/05 - 20050185689 - Optoelectronic device having a discrete bragg reflector and an electro-absorption modulator A semiconductor component includes a waveguide section for guiding optical radiation, a Distributed Bragg Reflector (DBR) section for wavelength-selecting optical radiation received from the waveguide section and an Electro-absorption Modulator (EAM) section for modulating optical radiation received from the DBR section, in which each section has a waveguide layer for ... 08/18/05 - 20050180478 - Apparatus for fabricating surface emitting semiconductor laser A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor ... 08/11/05 - 20050175052 - Semiconductor laser apparatus, laser coupler, data reproduction apparatus, data recording apparatus and production method of semiconductor laser apparatus There is provided a semiconductor laser apparatus capable of individually optimizing oscillations at a plurality of light emitting units fabricated on the single substrate in accordance with usages of each emitted laser lights. A plurality of cavities (laser diodes A and B), which correspond to the plurality of light emitting ... 08/11/05 - 20050175051 - Detecting pinholes in vertical cavity surface-emitting laser passivation A method for detecting a passivation pinhole includes forming an oxide vertical cavity surface-emitting laser (VCSEL) having an oxidation cavity, forming a passivation layer over a surface of the oxidation cavity, exposing the oxide VCSEL to an etchant vapor, and inspecting the oxide VCSEL for a defect caused by the ... 08/11/05 - 20050175050 - Reliability-enhancing layers for vertical cavity surface emitting lasers Vertical cavity surface emitting lasers (VCSELs) and methods of making the same are described. The VCSELs include reliability-enhancing layers that perform specific functions at one or more critical locations within a VCSEL structure to reduce or prevent defect formation and migration that otherwise might degrade VCSEL performance, for example, by ... ### FreshPatents.com Support |