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Coherent Light Generators > Particular Active Media > Semiconductor > Injection > Particular Current Control Structure Particular Current Control StructureParticular Current Control Structure patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/08/07 - 20070258498 - Semiconductor laser diode with emission efficiency independent of thickness of p-type cladding layer A semiconductor laser diode (LD) has been disclosed, where the emission efficiency is independent on a thickness of the p-type cladding layer. The LD provides a first semiconductor region made of group III-V compound semiconductor material, a mesa region and a burying region. The burying region, disposed on the first ... 10/18/07 - 20070242716 - High power vcsels with transverse mode control A single mode high power laser device such as a VCSEL is formed with two oxide apertures, one on each side of the active region or cavity. The sizes of the apertures and the distances from the apertures to the cavity center are chosen or optimum, near-Gaussian current density distribution. ... 10/04/07 - 20070230530 - Semiconductor laser device and method for manufacturing the same A semiconductor laser device including the following: a first conductivity type semiconductor substrate; a first conductivity type cladding layer disposed on the semiconductor substrate; an active layer disposed on the first conductivity type cladding layer; a second conductivity type first cladding layer disposed on the active layer; a second conductivity ... 10/04/07 - 20070230529 - Surface-emitting type semiconductor laser A surface-emitting type semiconductor laser includes: a first mirror; an active layer formed above the first mirror; a second mirror formed above the active layer; a current constricting section formed above or below the active layer; and a diffraction grating formed above the active layer and arranged in a plane ... 09/27/07 - 20070223551 - Superluminescent diode and method of manufacturing the same A 1.55 μm SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical ... 09/13/07 - 20070211775 - Semiconductor laser and method of manufacture Disclosed is a laser (10) comprising a lasing cavity with a lasing medium and primary optical feedback means in the form of a facet (17) at either end of the cavity, the laser cavity defining a longitudinally extending optical path; and secondary optical feedback means formed by a plurality of ... 08/23/07 - 20070195848 - Nitride semiconductor laser device having current blocking layer and method of manufacturing the same A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer 30 that is made of InxAlyGa1-x-yN (0≦x≦0.1, 0.5≦y≦1, 0.5≦x+y≦1) and has a stripe-shaped window 32 formed ... 08/23/07 - 20070195847 - Semiconductor laser diode and integrated semiconductor optical waveguide device A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a ... 08/09/07 - 20070183470 - Distributed feedback semiconductor laser A distributed feedback semiconductor laser comprises a first cladding layer, a first optical guide layer, an active layer, a second optical guide layer, an InP semiconductor layer, an InGaAsP semiconductor layer, and a second cladding layer. The first optical guide layer is provided on the first cladding layer. The active ... 06/07/07 - 20070127532 - Semiconductor laser diode A semiconductor laser diode includes, on a substrate, a first cladding layer; an active layer formed on the first cladding layer; a second cladding layer formed on the active layer and having a ridge stripe for injecting a current into the active layer; and a light emitting portion formed on ... 04/26/07 - 20070091957 - Semiconductor laser device and method for manufacturing the same semiconductor laser device A current blocking structure of a semiconductor laser includes a p-type InP buried layer, an n-type InP current blocking layer, and a p-type InP current blocking layer laminated along the mesa side surface of a ridge. In the structure, an upper end part of the n-type InP current blocking layer ... 04/05/07 - 20070076773 - Buried ridge waveguide laser diode Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first ... 03/01/07 - 20070047607 - Surface emitting type optical semiconductor device It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction ... 02/22/07 - 20070041413 - Semiconductor laser diode with current restricting layer and fabrication method thereof Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and ... 02/08/07 - 20070030871 - Semiconductor device having low resistance contact to p-type semiconductor layer of a wide band gap compound and method for manufacturing the same A semiconductor device having low resistance contact to p-type semiconductor layer of a wide band gap compound and a method for manufacturing the same are provided. The semiconductor device includes a p-type semiconductor layer of a GaN based compound formed on a substrate, a p-type carbon nanotube layer, and a ... 01/25/07 - 20070019696 - Vertical cavity surface emitting laser and method for fabricating the same The invention relates to a vertical cavity surface emitting laser and method for fabricating the same. The vertical cavity surface emitting laser of the invention comprises: a substrate, a first reflector, an active layer, a second reflector, a first electrode layer and a second electrode layer. The second reflector has ... 01/18/07 - 20070014324 - Vertical cavity surface emitting laser In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines ... 01/18/07 - 20070014323 - Semiconductor device and method for manufacturing the same Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type ... 01/04/07 - 20070002916 - Semiconductor laser element A semiconductor laser element including a ridge extending along a laser output direction of the laser element. The ridge has a central portion, two peripheral portions sandwiching the central portion, and two transitional portions. Window regions that are non-gain regions are located in corresponding peripheral portions. A difference in an ... 12/14/06 - 20060280215 - Ridge-waveguide semiconductor laser diode A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the ... 11/23/06 - 20060262824 - Surface-emitting type semiconductor laser and method for manufacturing the same A surface-emitting type semiconductor laser includes a first mirror, an active layer formed above the first mirror, a second mirror formed above the active layer, a first electrode formed above the second mirror, and a second electrode formed above the first electrode, wherein each of the first electrode and the ... 11/09/06 - 20060251137 - Semiconductor laser diode and method for manufacturing the same In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the active layer, the first protrusion portion ... 11/02/06 - 20060245459 - Semiconductor laser device A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to ... 10/26/06 - 20060239320 - Compound semiconductor laser device A compound semiconductor laser device has a semiconductor substrate of first conduction type and a plurality of layers sequentially formed on the substrate. The plurality of layers include first and second cladding layers of the first conduction type, a third cladding layer of second conduction type, and an active layer ... 10/05/06 - 20060222031 - Opto-semiconductor devices An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of ... 10/05/06 - 20060222030 - Optical semiconductor device, manufacturing method therefor, and optical semiconductor apparatus A highly reliable optical semiconductor device insusceptible to degradation in the characteristics thereof. An n-type buffer layer, n-type first cladding layer, active layer, a p-type first layer of the second cladding layer, p-type etch-stop layer, p-type second layer of the second cladding layer, and p-type contact layer are formed an ... 09/28/06 - 20060215719 - High power diode lasers The invention relates to ridge waveguide semiconductor diode lasers that include a substrate, a first cladding layer near the substrate, a second cladding layer near the first cladding layer, and an active layer between the first cladding layer and the second cladding layer and extending the distance between a first ... 09/21/06 - 20060209915 - Photovoltaic device An aspect of the present invention provides a photovoltaic device having a first semiconductor layer of a first conduction type and a third semiconductor layer of a second conductivity type. At least one of the first and third semiconductor layers includes an amorphous semiconductor layer. The amorphous semiconductor layer has ... 09/21/06 - 20060209914 - Semiconductor device and manufacturing method thereof In order to reduce the parasitic capacitance of the device and obtain an enhanced high-speed response characteristic while assuring the reliability of the device, a semiconductor device is provided such that it comprises: a mesa structure formed on a semiconductor substrate and including a first cladding layer, an active layer, ... 09/14/06 - 20060203872 - Optical semiconductor device, electronic device, and method for producing optical semiconductor device A resin molded portion 5 is provided with a first protruding molded portion 17 that protrudes from a first inclination portion 11 and a second protruding molded portion 18 that protrudes from a second inclination portion 12. The first protruding molded portion 17 and the second protruding molded portion 18 ... 09/07/06 - 20060198414 - Semiconductor optical device In a semiconductor optical device, the semiconductor substrate has a primary surface intersecting with a predetermined axis. The lower cladding region of the first conductive type is provided on the primary surface thereof. The lower cladding region includes ridge regions and a base region. The base region has first portions ... 09/07/06 - 20060198413 - Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined ... 05/04/06 - 20060093004 - Semiconductor laser device and method for manufacturing the same Provided are a semiconductor laser device and a method for manufacturing the same. The method comprises the steps of: sequentially laminating a first conductivity-type clad layer, an active layer, a second conductivity-type clad layer, and a second conductivity-type cap layer on a substrate; forming a metal film pattern on the ... 05/04/06 - 20060093003 - Semiconductor laser device and process for preparing the same Provided are a high output semiconductor laser device that is capable of inhibiting changes in far-field horizontal (FFH) due to increased output thereof, and a process for preparing the same. The semiconductor laser device in accordance with the present invention comprises a first clad layer of a first conductivity type ... 05/04/06 - 20060093002 - Hybrid type integrated optical device A hybrid type integrated optical device has a semiconductor laser mounted on a planar waveguide platform by flip-chip bonding. The optical device comprises a semiconductor laser and a planar waveguide platform. The semiconductor laser includes a first structure, which has an active region and a light emission surface formed on ... 04/20/06 - 20060083280 - Method for producing multilayers on a substrate The invention relates to a method for producing a multilayer on a receiving substrate, including the following steps: the formation of an initial substrate comprising a first material layer formed on the surface of a supporting substrate made of a second material, molecular adhesion bonding of the surface of the ... 04/13/06 - 20060078025 - Ridge waveguide semiconductor laser and method of manufacturing the same A substrate, a laminated structure formed above the substrate and including a first cladding layer, an active layer, and a second cladding layer each containing a compound semiconductor, a current confinement layer containing a compound semiconductor, which is formed on the second cladding layer so as to have an opening, ... 04/13/06 - 20060078024 - Semiconductor laser device A semiconductor laser device having a far field pattern (FFP) with a Gaussian distribution that is less prone to ripples is provided. The semiconductor laser device comprises a semiconductor layer having a first conductivity type, an active layer, a semiconductor layer having a second conductivity type, a waveguide region formed ... 04/06/06 - 20060072641 - Semiconductor laser element and monolithic two-wavelength semiconductor laser device In the semiconductor laser element and the monolithic two-wavelength semiconductor laser device, an active layer 6 is formed above an n-type GaAs substrate 1, and a p-type AlGaInP clad layer 8 is formed above the active layer 6. Furthermore, an n-type AlGaInP block layer 13 having a refractive index nearly ... 03/30/06 - 20060067374 - Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system In the semiconductor laser device of the present invention, a p-side electrode 115 formed on a second conductive type semiconductor layer group of the layers 108 through 114 includes an Ag layer 115a, a Pd layer 115b and an Au layer 115c in order from the side in contact with ... 03/02/06 - 20060045157 - Semiconductor laser with expanded mode Systems and methods for expanding an optical mode of a laser or optical amplifier to reduce leakage current. A waveguide layer is included in a laser that optically couples with the active region. The waveguide layer is configured to expand the optical mode into the layers beneath the active region. ... 02/02/06 - 20060023764 - Semiconductor laser and method of manufacturing the same In a semiconductor laser according to the present invention, a p-type and n-type semiconductor portion supply positive holes and electrons to a confining layer in a direction perpendicular to a stacking direction of the confining layer, and the p-type and n-type semiconductor portions do not prevent light produced in the ... 01/26/06 - 20060018353 - Nitride-based semiconductor light-emitting device and method of fabricating the same A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover ... 01/26/06 - 20060018352 - Ridge-type semiconductor laser and method of fabricating the same A ridge-type semiconductor laser is provided. The ridge-type semiconductor laser includes a pattern for a current inflow path control formed on an active layer and having an opening thereinside controlling a current inflow path with a width W1, and a ridge formed on the pattern for a current inflow path ... 01/12/06 - 20060007976 - Semiconductor laser device In a semiconductor laser device of the invention, a ridge portion 150 forms a waveguide, and guided light goes along the ridge portion 150. A tail of the guided layer is present also at first side portions 151, while second side portions 152 are regions which the tail of the ... 01/05/06 - 20060002442 - Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures Light emitting devices and methods of fabricating light emitting devices having a current blocking mechanism below the wire bond pad are provided. The current blocking mechanism may be a reduced conduction region in an active region of the device. The current blocking mechanism could be a damage region of a ... 12/22/05 - 20050281304 - Semiconductor laser device and method for fabricating the same A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW active layer, a plurality of dielectric films formed at least on part of the p-type cladding ... 11/10/05 - 20050249254 - Current-confinement heterostructure for an epitaxial mode-confined vertical cavity surface emitting laser A vertical-cavity surface-emitting laser comprises one or more semiconductor epitaxial phase-shifting mesa layers that are adapted to provide optical mode confinement, and that are further embedded between semiconductor epitaxial materials with a conductivity type that is substantially the same as the phase-shifting mesa layers. The laser further includes reverse-biased p-n ... 11/10/05 - 20050249253 - Semiconductor light-emitting device and a method of manufacture thereof A semiconductor light-emitting device and a method of manufacture thereof A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure (16) fabricated in a nitride materials system and including an aluminium-containing cladding region or an aluminium-containing optical guiding region (5). The etching step forms a ... 11/03/05 - 20050243881 - Inalas having enhanced oxidation rate grown under very low v/iii ratio A current confinement layer of a VCSEL is formed by adjusting flow rates of In-, Al-, and As-containing precursors introduced within a deposition chamber. By maintaining a low ratio between the flow rate of the As-containing precursors and the total flow rate of In- and Al-containing precursors (e.g., less than ... 10/20/05 - 20050232325 - Semiconductor laser In a semiconductor laser 1, a current blocking layer 19 covers a p-type 2nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at both a light-emission end and an end opposite the light-emission end, to thus form non-current injection ... 10/20/05 - 20050232324 - Semiconductor light emitting device and semiconductor light emitting apparatus A semiconductor light emitting device comprises: a stacked body of semiconductor including an active layer; a ridge stripe protruding and extending in a first direction on a first major surface of the stacked body; dummy ridges protruding on the first major surface of the stacked body on both sides of ... 09/29/05 - 20050213628 - Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system In a semiconductor laser device, a p-side electrode (114) of a multilayer structure put in contact with the surface of a ridge portion (130) of a second conductive type semiconductor layer group (p-AlGaAs first upper cladding layer (108), p-AlGaAs second upper cladding layer (109), p-GaAs etching stop layer (110), p-AlGaAs ... 09/01/05 - 20050190806 - Semiconductor laser and manufacturing method therefor A semiconductor laser has a substrate, a laminate including at least an active layer, a ridge stripe portion on the laminate, a current blocking layer provided on lateral side surfaces of the ridge stripe portion and on an upper surface of the laminate on lateral sides of the ridge stripe ... ### FreshPatents.com Support |