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Coherent Light Generators > Particular Active Media > Semiconductor > Injection InjectionInjection patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/08/07 - 20070258495 - Semiconductor laser diode, semiconductor optical amplifier, and optical communication device To provide a semiconductor laser diode and a semiconductor optical amplifier and an optical communication device incorporating the semiconductor laser diode or the semiconductor optical amplifier which enable low power consumption and high optical output. A semiconductor laser diode according to an embodiment of the present invention is a semiconductor ... 10/25/07 - 20070248133 - Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device A semiconductor laser device includes a first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending from the mounting portion, a second lead extending along the lead portion of the first lead, and a retention portion made of an insulative ... 10/25/07 - 20070248132 - Light emitting element and method of manufacturing the same A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ... 09/27/07 - 20070223548 - Semiconductor laser device In a semiconductor laser device including a package for airtight sealing, and a semiconductor laser element provided in the package, a moisture concentration inside the package is 2500 ppm or less and arithmetic mean roughness in at least one portion of an inner surface of the package is 0.3 μm ... 09/27/07 - 20070223547 - Semiconductor laser devices and methods A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base, ... 08/02/07 - 20070177644 - Highly directional light emitting diode using photonic bandgap waveguides Edge-emitting light source and method for fabricating an edge-emitting light source. The edge-emitting light source includes a photonic crystal having at least one waveguide region. An edge-emitting semiconductor structure having a light emitting active layer is incorporated within the at least one waveguide region. Light emitted by the edge-emitting semiconductor ... 08/24/06 - 20060187985 - High reliability etched-facet photonic devices Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device. ... 06/29/06 - 20060140234 - Surface emitting laser device having double channeled structure Embodiments provide a vertical external cavity surface emitting laser (VECSEL) that may provide a uniform current density in an active layer using a double current injecting channel. The surface emitting laser device may include a double channel current injection structure for uniformly applying current to an active layer, wherein the ... 06/22/06 - 20060133439 - Semiconductor laser device and optical information recording apparatus provided therewith A semiconductor laser device that offers higher coupling efficiency to a pickup optical system by dramatically reducing the amount of difference between the shape of an FFP in the vertical direction and a Gaussian shape, and that can be produced at lower cost by reducing the operating power needed. The ... 02/23/06 - 20060039431 - Quantum cascade laser device A device includes a multiple quantum well with potential barriers and quantum wells, and an electric field element for applying an electric field thereto. The multiple quantum well includes at least two regions A and a region B disposed therebetween. The region A includes a plurality of energy levels, and ... 01/05/06 - 20060002440 - Optical element and its manufacturing method To improve the reliability of an optical element and its manufacturing method. An optical element includes a substrate, a columnar section formed above the substrate and having an upper surface for light emission or incidence, a resin layer including a first section formed above the substrate and around the columnar ... 12/29/05 - 20050286582 - Photosemiconductor device In a TTG-DFB-LD including a MQW wavelength control layer 16 whose refractive index varies by the current injection, the effective forbidden bandwidth of the MQW wavelength control layer 16 is larger by a value in the range of above 40 meV including 40 meV and below 60 meV excluding 60 ... 12/22/05 - 20050281303 - Semiconductor light emitting device and manufacturing method thereof A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a ... 10/13/05 - 20050226294 - Optoelectronic device based on an antiwaveguiding cavity A semiconductor optoelectronic device includes at least one cavity and one multilayered interference reflector. The cavity is designed preferably to possess properties of an antiwaveguiding cavity, where no optical modes propagate in the lateral plane. The existing optical modes are the modes propagating in the vertical direction or in a ... 09/29/05 - 20050213625 - Semiconductor laser A semiconductor laser having an oscillation wavelength λ (nm) and comprising at least a substrate, a first-conduction-type clad layer having an average refractive index N1cld, an active layer structure having an average refractive index NA, and a second-conduction-type clad layer having an average refractive index N2cld. This has a first-conduction-type ... 08/18/05 - 20050180475 - Semiconductor laser device The provided semiconductor laser device includes a substrate, an active layer, a first cladding layer located between the active layer and the substrate, a second cladding layer located on the active layer, and a first electrode layer including a metal waveguide layer, which is formed of a metal having a ... ### FreshPatents.com Support |