REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Coherent Light Generators > Particular Active Media > Semiconductor SemiconductorSemiconductor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.10/25/07 - 20070248131 - High efficiency intersubband semiconductor lasers An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax ... 10/04/07 - 20070230527 - Fundamental-wave light source and wavelength converter A reflection element 3 disposed in an optical waveguide element 2 returns a part of light to a semiconductor laser diode element 1 so that the semiconductor laser diode element 1 oscillates in a coherent collapse mode, and a semiconductor light amplifier 7 is optically coupled to the optical waveguide ... 09/20/07 - 20070217458 - Nitride semiconductor laser element The invention discloses that a nitride semiconductor laser element is able to comply with requirement of high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element includes an n-type semiconductor layer, an active layer (205) and a p-type semiconductor layer each laminated ... 09/20/07 - 20070217457 - Optically pumped semiconductor devices for the generation of radiation, their production as well as methods for the strain compensation in the layer successions used within A new method for the production of strain-compensating semiconductor layers is suggested, as well as its use for the production of strained-controlled semiconductor layer systems and the production of optically pumped semiconductor devices for the production of radiation, preferably long-wave radiation. ... 08/30/07 - 20070201523 - Pnp light emitting transistor and method A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an ... 08/23/07 - 20070195841 - Charge neutralization in semiconductor structures A method for neutralizing trapped charges in a buried oxide layer. The method includes providing a semiconductor structure which includes (a) a semiconductor layer, (b) a charge accumulation layer on top of the semiconductor layer, and (c) a doped region in direct physical contact with the semiconductor layer, wherein the ... 07/12/07 - 20070160099 - Multiple anneal induced disordering A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semiconductor devices differing bandgap shifts across a wafer, device or substrate surface. The method includes: pattering the surface of a semiconductor substrate with QWI-initiating material in first regions of the surface; conducting a first ... 07/05/07 - 20070153853 - Buried lateral index guided lasers and lasers with lateral current blocking layers A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to ... 07/05/07 - 20070153852 - System for adjusting the wavelength light output of a semiconductor device using hydrogenation A method and structure for adjusting the wavelength output of a semiconductor device is described. In the method, the hydrogen concentration in an active region of the semiconductor device is adjusted either during fabrication or after the device has been fabricated. The adjustment provides a simple technique for fine tuning ... 07/05/07 - 20070153851 - On-chip integration of passive and active optical components enabled by hydrogenation A method and structure for integrating many optical devices on a single wafer is described. The method fabricates passive interconnect devices using hydrogenation techniques. Lateral optical confinement is achieved by hydrogenating regions laterally adjacent to the waveguide core. Vertical optical confinement is adjusted by careful control of the hydrogen content ... 06/14/07 - 20070133635 - Dual light source and laser projection display apparatus using same Disclosed is a laser projection display apparatus. The laser projection display apparatus includes a green light source for generating green light having a predetermined wavelength, and a dual light source in which at least two semiconductor lasers are integrated and generate red and blue lights of predetermined wavelengths. The apparatus ... 06/07/07 - 20070127531 - Laser source with broadband spectrum emission A quantum dot laser operates on a quantum dot ground-state optical transition. The laser has a broadband (preferably≧15 nm) spectrum of emission and a high output power (preferably≧100 mW). Special measures control the maximum useful pump level, the total number of quantum dots in the laser active region, the carrier ... 05/31/07 - 20070121693 - Semiconductor laser device A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure ... 05/31/07 - 20070121692 - Nitride semiconductor laser element and fabrication method thereof At each side of a ridge stripe 110, a trench is formed as a region carved relative to a wafer surface so that, at the time of cleaving, a surface irregularity that develops at a mirror facet near an active layer is prevented from reaching the ridge stripe 110. ... 05/31/07 - 20070121691 - Nitride semiconductor laser element and method for manufacturing the same A nitride semiconductor laser element, comprises a substrate, a nitride semiconductor layer laminated over said substrate and having a ridge on its surface, and an electrode, wherein a first protective film is formed so that an air gap is located on at least part of the region extending from the ... 05/31/07 - 20070121690 - Highly efficient gallium nitride based light emitting diodes via surface roughening A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and ... 05/17/07 - 20070110113 - Semiconductor laser diode and semiconductor laser diode assembly containing the same Provided is a semiconductor laser diode. The semiconductor laser diode includes a first material layer, an active layer, and a second material layer, characterized in that the semiconductor laser diode includes: a ridge waveguide, which is formed in a ridge shape over the second material layer to define a channel ... 05/17/07 - 20070110112 - Group iii nitride semiconductor light emitting device A group III nitride semiconductor light emitting device according to the present invention includes an immediate layer formed of AlxGa1-x-yInyN (0<x<1, 0<y<1, x+y<1) between an active layer and a cladding layer and an electron blocking layer formed of p-type group III nitride semiconductor having a smaller electron affinity than that ... 05/10/07 - 20070104238 - Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module ... 05/10/07 - 20070104237 - Semiconductor laser apparatus and semiconductor laser device In an outermost surface of a semiconductor laser device to which a solder layer is applied, an incomplete adherent layer is formed which is incompletely adhered to the solder layer, extends in a width direction perpendicular to a longitudinal direction of a light-emitting region and a stacking direction of the ... 05/03/07 - 20070098030 - Nitride semiconductor laser device and method of manufacturing the same A semiconductor laser device is provided. The semiconductor laser device includes a substrate, and an n-material layer, an n-clad layer, an n-light waveguide layer, an active region, a nitride semiconductor layer, a metal layer and a metal-based clad layer sequentially formed on the substrate. The metal layer and the metal-based ... 04/26/07 - 20070091956 - Semiconductor laser element and method of fabrication thereof A semiconductor laser element having an advantageous vertical light confinement efficiency, a low threshold current and a low element resistance is provided. The semiconductor laser element has a substrate and a stacked structure formed thereon, where the stacked structure comprises a buffer layer, an n-Al0.6Ga0.4As cladding layer, an n-Al0.47Ga0.53As cladding ... 04/26/07 - 20070091955 - Semiconductor laser device and optical pickup apparatus using the same A semiconductor laser device is provided, in which an optical axis of a far-field pattern (FFP) is stabilized and which is capable of oscillating in a fundamental transverse mode up to a high output. An optical pickup apparatus also is provided, in which an optical axis of an FFP is ... 04/26/07 - 20070091954 - Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure and products produced thereof A method of controlling the degree of IFVEI for post-growth tuning of an optical bandgap of a semiconductor heterostructure. The resultant layer structure may contain a semi-conductor heterostructure with one or more regions with selectively modified bandgap. According to one aspect of the invention, a metal interlayer is deposited between ... 04/26/07 - 20070091953 - Light-emitting diode with a narrow beam divergence based on the effect of photonic band crystal-mediated filtration of high-order optical modes A semiconductor light-emitting diode having a low beam divergence includes at least one waveguide comprising an active region generating light by injection of a current, a photonic band crystal having the refractive index modulation in the direction perpendicular to the propagation of the emitted light, and at least one optical ... 04/26/07 - 20070091952 - Semiconductor laser apparatus and fabrication method of the same There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance. ... 04/26/07 - 20070091951 - Gain-coupled distributed quantum cascade laser Purely gain-coupled diffraction gratings may be realized for use in QCLs and other edge emitting lasers that lack a typical p-n junction. The periodic, typically heavily n-doped regions of doped diffraction gratings are replaced with p-type regions having significantly lower doping. ... 04/19/07 - 20070086498 - Semiconductor laser having an improved window layer and method for the same A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first clad layer formed thereon. When AlGaAs is used for the diffusion suppressing layer, the Al ratio of AlGaAs is ... 04/19/07 - 20070086497 - Semiconductor laser device A semiconductor laser device comprises: an active layer; a cladding layer of a first conductivity type; an insulating film; a first electrode ; and a pad electrode provided on the first electrode. The cladding layer is provided above the active layer, and has a ridge portion constituting a striped waveguide ... 04/19/07 - 20070086496 - Semiconductor light emitting device A semiconductor light emitting device comprises: a first cladding layer made of nitride semiconductor of a first conductivity type; an active layer provided on the first cladding layer, the active layer including a first barrier layer made of nitride semiconductor, a second barrier layer made of nitride semiconductor, and a ... 04/12/07 - 20070081569 - Photonic quantum ring laser for low power consumption display device A three-dimensional (3D) photonic quantum ring (PQR) laser for a low power consumption display, wherein the PQR laser has a sufficient small radius to adjust an inter-mode spacing (IMS) of oscillation modes discretely multi-wavelength-oscillating in an envelope wavelength range within the gain profile of a given semiconductor material of the ... 04/05/07 - 20070076772 - Semiconductor laser device Provided is a semiconductor laser device with a ridge waveguide that is excellent in polarization characteristics and easiness of mounting. In its outermost part on which the solder layer is deposited, the incomplete adherent layer is formed at least in the ridge structure. In bonding the semiconductor laser device to ... 03/29/07 - 20070071051 - Method of manufacturing semiconductor optical device method for manufacturing a semiconductor optical device includes forming an epitaxial structure containing at least an active layer which can emit light, of a III-V group semiconductor material; forming an insulating layer over the epitaxial structure, which prevents the V group element from escaping from the epitaxial structure during heat ... 03/29/07 - 20070071050 - Laser diode device A laser diode device capable of detecting laser light with a simple structure is provided. A laser diode device, includes a semiconductor layer formed through laminating a first conductive type layer, an active layer and a second conductive type layer in this order, the second conductive type layer including a ... 03/29/07 - 20070071049 - Semiconductor laser unit and method for manufacturing optical reflection film The semiconductor laser unit comprises a laser emission part having a plurality of semiconductor laser elements of different laser beam wavelengths, and a mirror part having an optical reflection film for reflecting laser beams emitted from the laser emission part. The mirror part is blocked out into a plurality of ... 03/22/07 - 20070064759 - Method for manufacturing semiconductor laser device and semiconductor laser device An improved throughput can be presented, since an influence of the deterioration in crystallinity created in the epitaxial layer can be eliminated by a simple and easy method, and a semiconductor laser device having stabilized properties such as threshold current, slope efficiency, device life time and the like can be ... 03/22/07 - 20070064758 - Laser diode and laser diode device A laser diode capable of being easily mounted, and a laser diode device in which the laser diode is mounted are provided. A hole is disposed in a semiconductor layer, and a p-type electrode and an n-type semiconductor layer are electrically connected to each other by a bottom portion (a ... 03/22/07 - 20070064757 - Avalanche quantum intersubband transition semiconductor laser Provided is an avalanche quantum intersubband transition semiconductor laser. The laser includes: a first cladding layer, a first wave guide layer, an active region, a second wave guide layer, and a second cladding layer formed on a semiconductor substrate, wherein the active region consists of multiple stacks (periods) of a ... 03/22/07 - 20070064756 - Light source In a first broad aspect, the invention provides a light source. The light source includes a semiconductor laser for emitting laser light at a first frequency. The light source also includes an optical fibre that includes a fibre Bragg grating. The fibre Bragg grating is optically coupled to the semiconductor ... 03/22/07 - 20070064755 - External cavity type semiconductor laser An external cavity type semiconductor laser that has a larger output and a more excellent single mode characteristic than a conventional external cavity type semiconductor laser is provided. The external cavity type semiconductor laser has a laser diode 11, a window glass 16, a grating, and a lens. The external ... 03/22/07 - 20070064754 - Semiconductor laser device This invention relates to semiconductor laser apparatus with a structure for reducing the divergence angle of output light and for narrowing the spectral width. The semiconductor laser apparatus has at least a semiconductor laser array, a collimator lens, a path rotator, and an optical element with a reflecting function. The ... 03/15/07 - 20070058686 - Active optical antenna A new class of photonic devices called active optical antennas, which consist of metallic structures directly integrated on to the facet of a semiconductor lasers, and of instruments based on such antennas are disclosed. The structures consist of metallic elements which function as antennas at optical wavelengths by spatially concentrating ... 03/08/07 - 20070053398 - Semiconductor laser device A semiconductor laser device includes a semiconductor laser body including a resonator and having a front end face and a rear end face facing each other, the resonator being located between the front end face and the rear end face. The front end face emits principal laser light. A reflectance ... 03/08/07 - 20070053397 - Angled faceted emitter A semiconductor laser having an angled facet is provided. The semiconductor laser includes a first distributed Bragg reflector (DBR). The laser further includes an active region coupled to the first DBR, wherein the active region comprises a highly reflective facet and a partially reflective facet, and a second DBR coupled ... 02/08/07 - 20070030869 - Semiconductor laser device and method of manufacturing the same A semiconductor laser diode comprises: an n-type GaAs substrate; and a first laser diode structure having a first n-type cladding layer, a first active layer including a quantum well layer, a first p-type cladding layer on the first active layer, a p-type signal layer on the first p-type cladding layer ... 01/25/07 - 20070019694 - Laser module having controlled optical power density at exposed surfaces A laser module includes: one or more semiconductor laser elements which emit one or more laser beams; an optical fiber which has a light-entrance end face; and an optical condensing system which is constituted by one or more optical components and makes the one or more laser beams converge at ... 01/11/07 - 20070008998 - Semiconductor light emitting device According to the present invention, plural Group III nitride based compound layers with different compositions are placed between an active layer and a hole supply layer for smoothly moving holes to the active layer by using Coulomb forces from polarization charges caused by the difference in composition among the Group ... 01/11/07 - 20070008997 - Optical element and optical module An optical element comprising: a surface-emitting type semiconductor laser having an emission surface; and a photodetector element formed above the emission surface of the surface-emitting type semiconductor laser, wherein the photodetector element includes a semiconductor layer having a photoabsorption layer, the semiconductor layer having a film thickness d that satisfies ... 01/04/07 - 20070002913 - Structure of laser A structure of laser is disclosed. The laser structure comprises: a plurality of pins, one of which having a large area connection part on the top, wherein the connection part has two outwardly extending plates on both sides; a photo diode and a laser diode mounted on the connection part ... 12/28/06 - 20060291514 - Algainn-based lasers produced using etched facet technology A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE. ... 12/21/06 - 20060285565 - Structure of laser and method of manufacturing the same A structure of laser and manufacture methods thereof are disclosed. The method comprises the steps of: 1. coupling a plurality of photo diodes with first pins of a plurality of pin groups on a frame; 2. mounting a plurality of laser diodes on the photo diodes; 3. bonding the laser ... 12/07/06 - 20060274800 - Optical element and method for manufacturing the same An optical element includes a columnar section having an upper surface from which light is emitted or upon which light is incident, and an electrode composed of a plurality of layers including at least a first conductive layer and a second conductive layer laminated above the first conductive layer and ... 11/30/06 - 20060268953 - Nitride semiconductor device and method for fabricating the same A nitride semiconductor device comprises: a well layer of nitride semiconductor containing In and Ga; barrier layers of nitride semiconductor sandwiching the well layer, containing Al and Ga, and having a larger band gap energy than the well layer; and a thin film layer provided between the well layer and ... 11/30/06 - 20060268952 - Semiconductor laser A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×1017 cm−3 or less are stacked on a p-type InP substrate containing Zn. On the undoped InP buffer layer, a Mg-doped p-type InP cladding layer, an InGaAsP optical ... 11/30/06 - 20060268951 - Nitride-based semiconductor laser diode and method of manufacturing the same A nitride-based semiconductor laser diode and a method of manufacturing the same are provided. The nitride-based semiconductor laser diode includes a first material layer, an active material layer, and a second material layer that are sequentially formed; a ridge formed on the second material layer; and a current blocking layer ... 11/16/06 - 20060256826 - Alternating current light-emitting device An alternating current light emitting device and the fabrication method includes forming one or more alternating current micro diode light emitting modules on a substrate, wherein the alternating current micro diode light emitting module has two micro diodes connected to one another, and each micro diode has at least two ... 11/16/06 - 20060256825 - Nitride semiconductor laser element A nitride semiconductor laser device comprises a nitride semiconductor substrate (101); a nitride semiconductor lamination structure that has an n-type semiconductor layer (102), an active layer (104) and a p-type semiconductor layer (103) laminated on or above the nitride semiconductor substrate (101), and has a stripe-shaped waveguide region for laser ... 10/19/06 - 20060233211 - Group iii nitride led with undoped cladding layer The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III ... 10/19/06 - 20060233210 - Semiconductor laser device, method for manufacturing the same, and optical pickup device using the same The present invention provides a semiconductor laser device having a high reliability and desirable temperature characteristics while being a high-power device. An active layer, and two cladding layers sandwiching the active layer therebetween are formed on a substrate. One of the cladding layers forms a mesa-shaped ridge, and the ridge ... 10/12/06 - 20060227832 - Semiconductor laser apparatus and production method thereof A semiconductor blue-light-laser apparatus for emitting laser beams with high positional accuracy, which is achieved by mounting a semiconductor laser element on a semiconductor substrate with high accuracy and reliability, and a production method of the apparatus. A recess in a surface of the substrate has a p-type layer 100, ... 10/12/06 - 20060227831 - Semiconductor laser apparatus A semiconductor laser apparatus includes multiple light emitting points, and a simple ridge stripe structure for each of the light emitting points. At least one of the light emitting points is disposed at a location that is 0% to 15% of the width of a substrate of the apparatus from ... 10/05/06 - 20060222026 - Semiconductor laser device and manufacturing method therefor On an n-type GaAs substrate 19 are formed an n-type GaAs buffer layer 20, a non-doped AlxGa1-xAs light guide evaluation layer 21, an n-type AlxGa1-xAs first clad layer 22, an n-type AlxGa1-xAs second clad layer 23, a non-doped AlxGa1-xAs first light guide layer 24, a non-doped AlxGa1-xAs quantum well active ... 09/28/06 - 20060215717 - Semiconductor laser device A semiconductor laser device producing light having a TE-polarized component suitable for practical use. A semiconductor laser device includes a GaAsP active layer, InGaP guide layers, and, AlGaInP cladding layers. The GaAsP active layer emits light. The GaAsP active layer is interposed between the InGaP guide layers. The InGaP guide ... 09/14/06 - 20060203871 - Nitride semiconductor light emitting device and fabrication method thereof A nitride semiconductor light emitting device includes: an active layer formed of a first III-V nitride semiconductor, the active layer having opposite surfaces which face each other; an alloy crystal layer formed of InxAlyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1) on one of the opposite surfaces of the active layer, the alloy crystal ... 09/14/06 - 20060203870 - Modulator integrated semiconductor laser device A modulator integrated semiconductor laser device is provided. In the modulator integrated semiconductor laser device, a lower DBR (distributed Bragg reflector) layer is formed on the substrate, an active layer is formed on the lower DBR layer and includes a plurality of barrier layers alternating with a plurality of quantum ... 09/14/06 - 20060203869 - Semiconductor laser device A semiconductor laser device includes a submount and a laser chip mounted on the submount. The submount has a front-end face inclined with respect to a light-emitting face of the laser chip and a rear-end face having a shape complementary to the shape of the front-end face. ... 09/14/06 - 20060203868 - Laser diode device A laser diode device capable of obtaining high light efficiency and improving output by using an AlGaInN compound semiconductor as a material is provided. The laser diode device includes semiconductor layer which has an active layer and is made of a nitride Group III-V compound semiconductor containing at least one ... 09/14/06 - 20060203867 - Laser diode chip, laser diode, and method for manufacturing laser diode chip Both lateral side portions of a laser diode chip separated by the central portions of a p-type capping layer and a p-type clad layer and parallel to the horizontal edges of the cleavage planes of the chip are cut away by etching, so that the p-type capping layer and the ... 09/14/06 - 20060203866 - Laser diode package with an internal fluid cooling channel A laser diode assembly has a laser diode. The laser diode has an emitting surface and a reflective surface opposing the emitting surface. The laser diode has first and second side surfaces between the emitting and reflective surfaces. A first electrically-insulating heat sink is attached to the first side surface ... 09/14/06 - 20060203865 - Buried heterostructure quantum cascade laser A buried heterostructure quantum cascade laser structure uses reverse biased junction to achieve current blocking. Doping and ridge width of the structure may be adjusted to provide effective mode discrimination. ... 08/24/06 - 20060187984 - Semiconductor light emitting device, method of manufacturing same, and optical module A semiconductor light emitting device capable of realizing a long life, a method of manufacturing the same, and an optical module using the semiconductor light emitting device are provided. The semiconductor light emitting device has an active layer, in which a well layer made of a Ga1-xInxNyAs1-y-zSbz mixed crystal (0≦x<1, ... 08/17/06 - 20060182160 - Smart coating system An active coating system capable of collecting, analyzing, managing and adapting to data and/or its environment in real time. An exemplary embodiment of our inventive active coating system is corrosion resistant and includes a flexible sensor layer, a switch layer and a visual display layer. Operationally, the flexible sensor layer ... 08/10/06 - 20060176922 - Semiconductor laser device A first light feedback element is arranged at an optical distance L1 from a front facet of a semiconductor laser from which an output light is emitted on an optical path of the output light. An i-th light feedback element is arranged at an optical distance Li from the front ... 08/10/06 - 20060176921 - Semiconductor laser device To provide a semiconductor laser device for which a horizontal divergence angle of a laser beam can be improved independently of optimization of other properties such as a cladding layer thickness and a current injected region size. A current blocking layer covers a larger area of a p-type second cladding ... 08/03/06 - 20060171436 - Solid laser apparatus Moreover, a solid laser apparatus has a pseudo notch filter (9h), which is arranged for the gain to have a local minimum at the relaxation oscillating frequency of the solid laser apparatus, provided in the output control circuit (8,9,10) so that the peak of the gain transmission characteristic of the ... 08/03/06 - 20060171435 - Semiconductor laser, method of mounting semiconductor laser, semiconductor laser mounted structure, and optical disk system An upper portion of a second clad layer and a contact layer are provided with grooves so as to form a ridge therebetween. An electrode is formed on the ridge. An insulation film is formed to extent on side surfaces of the ridge, on the inside of the grooves, and ... 08/03/06 - 20060171434 - Semiconductor laser device and a method of mounting a semiconductor laser component on a submount The present invention provides a method of mounting a semiconductor laser component capable of preventing deterioration of laser characteristics and destruction of the semiconductor laser component due to a rise in temperature and a residual stress of the semiconductor laser component, wherein the semiconductor laser component is mounted on a ... 07/13/06 - 20060153262 - Terahertz quantum cascade laser A laser comprising: a substrate comprising a bulk region and a conducting layer; an active region (11) comprising a quantum cascade structure provided on a first surface of the substrate (12) such that said active region (11) is electrically connected to said conducting layer; first and second contacts (16, 17) ... 07/06/06 - 20060146902 - Distributed feedback laser including algainas in feedback grating layer The present invention provides a distributed feedback laser diode (DFB-LD), in which the active region may be easily flattened. The active region of the invention is optically coupled with the feedback grating made of the n-type InP layer and the n-type AlGaInAs layer. Since both layers show the n-type conduction, ... 06/15/06 - 20060126692 - Semiconductor laser apparatus A semiconductor laser apparatus includes a semiconductor laser element, a lead frame on which the semiconductor laser element is mounted, and an enclosure attached to the lead frame. When a direction in which a main beam is emitted from the semiconductor laser element is defined as forward, the lead frame ... 06/15/06 - 20060126691 - Dual platform semiconductor laser device A dual platform semiconductor laser device includes a laser chip layer, two independent platforms formed on the laser chip layer and defining a light emitting active area platform and a wire bonding platform, a planarized dielectric layer filled between the independent platforms, a protective layer disposed at the dielectric layer ... 06/15/06 - 20060126690 - Semiconductor laser apparatus capable of routing laser beams emitted from stacked-array laser diode to optical fiber with little loss A semiconductor laser apparatus according to an exemplary embodiment of the present invention is provided. For example, the apparatus may include a single or a plurality of stacked-array laser diodes, first beam compressors, and a separating optical device separating the group of laser beams into subgroups of laser beams in ... 06/15/06 - 20060126689 - Semiconductor laser diode and method of manufacturing the same Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on ... 06/15/06 - 20060126688 - Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure A novel indium gallium nitride laser diode is described. The laser uses indium in either the waveguide layers and/or the cladding layers. It has been found that InGaN waveguide or cladding layers enhance optical confinement with very small losses. Furthermore, the use of InGaN waveguide or cladding layers can improve ... 06/15/06 - 20060126687 - Method for producing a buried tunnel junction in a surface-emitting semiconductor laser Methods for producing buried tunnel junctions in surface-emitting semi-conductor lasers and devices incorporating the buried tunnel junctions are disclosed. The laser comprises an active zone containing a pn-junction, surrounded by a first n-doped semi-conductor layer and at least one p-doped semi-conductor layer. In addition to a tunnel junction on the ... 06/08/06 - 20060120425 - Micro oscillating element A micro oscillating element is formed integrally from a material substrate made up of a first conductive layer, a second conductive layer and an insulating layer disposed between the first conductive layer and the second conductive layer. This oscillating element includes an oscillation section, an oscillation section supporting frame, and ... 06/08/06 - 20060120424 - Semiconductor laser device In one or more aspects, a semiconductor laser device is described that may include a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer; a second cladding layer of a second conductivity type provided on the active layer, the second cladding layer ... 06/08/06 - 20060120423 - Long-wavelength semiconductor light emitting device and its manufacturing method For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide ... 06/08/06 - 20060120422 - Laser device and controlling method thereof A laser device includes a laminated body obtained by laminating a plurality of semiconductor layers on a semiconductor substrate. One semiconductor layer of the plurality of semiconductor layers is an active layer in which a light-emission region and an injecting region are alternately laminated. The laser device is provided with ... 06/08/06 - 20060120421 - Semiconductor laser and manufacturing method thereof In a semiconductor laser, in order to realize a desired oscillation wavelength efficiently by adjusting the oscillation wavelength of the laser with sufficient accuracy even when the oscillation wavelength of a manufactured laser deviates from a design value, for example, due to the manufacturing errors and the like in the ... 05/25/06 - 20060109882 - Diode laser module and method for the production thereof In a diode laser module and a method for the production thereof, there is a need to fix the optical elements required for collimating, beam shaping and/or beam rearrangement of the radiation of a laser diode element with high reproducibility and long-term stability in an optically aligned manner, wherein the ... 05/25/06 - 20060109881 - Semiconductor laser diode and method of fabricating the same A semiconductor laser diode and a method of fabricating the same are provided. The semiconductor laser diode includes: a substrate; a predetermined compound semiconductor layer formed on the substrate; a lower cladding layer formed on the compound semiconductor layer; an active layer formed on the lower cladding layer; an upper ... 05/18/06 - 20060104326 - Funnel structure vecsel A surface emitting laser apparatus is disclosed. A first substrate is disposed between a first electrode layer and a first reflective layer. An active region is disposed between the first reflective layer and a second reflective layer. A current blocking layer is disposed above the active region to form an ... 05/18/06 - 20060104325 - Laser diode and method of fabricating the same A laser diode without a ridge and a method of fabricating the same are provided. The laser diode includes an active layer and upper and lower clad layers. A current blocking layer formed of a semiconductor material is formed on the upper clad layer, and a current passing region is ... 05/18/06 - 20060104324 - Semiconductor laser apparatus Arrayed DBR (Distributed Bragg Reflector) laser shows a problem that spectrum purity is deteriorated when a current is flowed in a semiconductor optical amplifier for attaining a sufficient optical output. In addition, the arrayed waveguide grating laser shows a problem that the spectrum purity is deteriorated by leakage of light. ... 05/11/06 - 20060098704 - Semiconductor laser A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches ... 05/11/06 - 20060098703 - Semiconductor light emitting device A semiconductor light emitting device including an active layer interposed between an n-type cladding layer and a p-type cladding layer employs an AlxGa1-xN (AlGaN) layer having an Al composition ratio x satisfying 0.01≦x<0.06 as the n-type cladding layer. As the Al composition ratio x decreases below 0.06, the AlGaN layer ... 05/04/06 - 20060093001 - Multiple-wavelength laser diode and method of fabricating the same A multiple-wavelength laser diode (LD) and method of fabricating the same are provided. The multiple-wavelength LD includes at least three LDs, which are sequentially stacked and aligned such that centers of emission points of the at least three LDs form a line. ... 05/04/06 - 20060093000 - Multiple-wavelength laser diode and method of fabricating the same A multiple-wavelength laser diode (LD) and method of fabricating the same are provided. The multiple-wavelength LD includes at least three LDs, which are bonded onto a plate and aligned such that centers of emission points of the three LDs form a line. Also, the multiple-wavelength LD includes a first LD, ... 04/20/06 - 20060083279 - Semiconductor laser A semiconductor laser in which six layers are grown on one another, over an Si—GaAs substrate, in the following order: an Si—GaAs buffer layer, an Si—AlGaInP cladding layer, an active layer, an Mg—AlGaInP cladding layer, an Mg—AlGaInP band discontinuity reduction layer, and a Zn—GaAs contact layer. In this configuration, the ... 04/20/06 - 20060083278 - Method and structure for deep well structures for long wavelength active regions Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example. ... 04/13/06 - 20060078022 - Nitride semiconductor laser device A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a ... 04/13/06 - 20060078021 - Semiconductor laser unit and optical pickup device including the semiconductor laser unit The present invention provides a semiconductor laser unit which realizes efficient heat dissipation, reduction in size, high-density integration of optical elements, prevention of a light-receiving element from being polluted with dust, and simple structure for easy assembly. The semiconductor laser unit includes: (a) a metal plate having a first recessed ... 04/13/06 - 20060078020 - Integrated semiconductor laser device and method of fabricating the same An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion ... 04/06/06 - 20060072640 - Vertical cavity surface emitting laser having multiple top-side contacts A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a ... 04/06/06 - 20060072639 - Vertical cavity surface emitting laser with undoped top mirror A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active ... 03/23/06 - 20060062269 - Semiconductor laser module, spatial optical transmission system and electronic appliance A highly sensitive and inexpensive spatial optical transmission system using an LD (Laser Diode) as a light source and making use of the characteristics of a light receiving element is provided. The system includes a laser chip oscillating a laser beam, and a light receiving element receiving and converting to ... 03/23/06 - 20060062268 - Light source device for scanning-exposure and method and apparatus for scanning-exposure A blue laser light source is a semiconductor laser having a sapphire substrate that is transparent to a wavelength of a blue laser beam emitted from an active layer. A condenser lens converges the blue laser beam at a focal point where a modulator is placed. A slit plate limits ... 03/23/06 - 20060062267 - Semiconductor laser array and manufacturing method for semiconductor laser array A semiconductor laser array includes a substrate and a first laser element provided on the substrate for emitting a first wavelength laser. The first laser element has a first multi-layer structure that includes a first active layer and a first waveguide structure. The first active layer has a first emission ... 03/23/06 - 20060062266 - Temperature compensated lasers A novel approach for providing temperature compensation for semiconductor lasers is disclosed. This approach utilizes reflectivity characteristics in the at least one of the mirrors of the semiconductor laser to provide temperature compensation to the device. ... 03/16/06 - 20060056474 - Semiconductor light emitting device and method for manufacturing the same In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a ... 03/16/06 - 20060056473 - Semiconductor light emitting element and method for fabricating the same A surface emitting laser element includes a mesa structure of a semiconductor multilayer film formed to have a convex cross section. A first insulating film of an inorganic material is formed on a side surface of the mesa structure, and on the first insulating film, a resin layer is formed ... 03/16/06 - 20060056472 - Quantum nano-composite semiconductor laser and quantum nano-composite array On a grooved semiconductor substrate having a plurality of V-grooves individually extended in directions perpendicular to a direction Is of advance of an oscillated laser beam and mutually disposed in parallel along the direction Is of advance of the laser beam, a plurality of quantum wires (11) are formed on ... 03/09/06 - 20060050753 - Quantum nanostructure semiconductor laser A quantum nanostructure semiconductor laser is provided that does not use a buried structure defined by etching and regrowth processes in the prior arts, and can be manufactured using a procedure that is simple and has good reproducibility. This helps to reduce the threshold current and provides good lasing wavelength ... 03/09/06 - 20060050752 - Optical semiconductor device and optical semiconductor in tegrated circuit An optical semiconductor device and optical semiconductor integrated circuit are provided by combining, on a semiconductor substrate, materials having different refractive indices and different temperature dependence of the refractive indices. In particular, it becomes possible to control the temperature dependence of the oscillation wavelength with a propagating region having a ... 03/02/06 - 20060045156 - Semiconductor laser apparatus and manufacturing method thereof A one-chip semiconductor laser device for use in a semiconductor laser apparatus has a structure in which a red semiconductor laser device and an infrared semiconductor laser device are stacked on a blue-violet semiconductor laser device. The blue-violet semiconductor laser device is manufactured by forming semiconductor layers on a GaN ... 03/02/06 - 20060045155 - Method of fabricating laser diode Provided is a method of fabricating a laser diode. Embodiments of the method include sequentially forming at least a lower clad layer, a resonance layer, an upper clad layer, an upper contact layer, an upper electrode layer, and a sacrificial layer on a substrate; forming a ridge portion by etching ... 02/23/06 - 20060039430 - Method of fabricating semiconductor device A protective film is formed on a surface of a semiconductor device corresponding to at least a portion that is not to be disordered, by arranging a heat source on a path through which a precursor of the protective film to be formed passes, to cause a decomposition reaction of ... 02/23/06 - 20060039429 - Device for bi-directional optical communication and method for fabricating the same A device for bi-directional optical communication and a method of fabricating the same, whereby a monolithic surface light emitting laser and an optical detector are integrally formed to make a fabricating process simple, and the optical detector is placed about the surface light emitting laser, enabling to carry out light ... 02/23/06 - 20060039428 - Semiconductor laser device and manufacturing method therefor In a semiconductor laser device, a first cladding layer (2), a quantum well active layer (3), a second cladding layer (4), and an etching stopper layer (5) are sequentially stacked in this order on a substrate (1). On the etching stopper layer (5) is disposed a striped ridge portion (11) ... 02/23/06 - 20060039427 - Semiconductor laser with integrated heating element and method of manufacturing same A semiconductor laser structure has a laser active region and side trenches extending along the laser active region. At least one heatable stripe, in at least one of the side trenches, is connected to an electric power source. The amount of energy the source supplies to the stripe controls the ... 02/02/06 - 20060023762 - Surface-emitting type device and method for manufacturing the same To prevent electrostatic breakdown and improve reliability concerning surface-emitting type devices and methods for manufacturing the same. A surface-emitting type device includes a substrate 10, a light emitting element section 20 above the substrate 10, including a first semiconductor section 22 of a first conductivity type, a second semiconductor section ... 01/26/06 - 20060018351 - Semiconductor laser device In a semiconductor laser device, a wiring board (101) has pad patterns on its top surface, on which a block (102) is also mounted. The block (102) has a first mounting surface (113) and a second mounting surface (114), both of which face in an identical direction. The block (102) ... 01/19/06 - 20060013275 - Semiconductor laser device A semiconductor laser device 1 has, arranged inside an airtight-sealed package 2, a semiconductor laser element 3 having an active region made of one material selected from the group consisting of an AlGaAs-based crystal, an AlGaInP-based crystal, an AlGaN-based crystal, and an InGaN-based crystal. The atmospheric gas inside the package ... 01/12/06 - 20060007972 - Method and device for passive alignment The present invention is related to a method and device for precision and passive alignment such as precision and passive alignment technology for low cost array fibre access components. A laser carrier is passive aligned to an MT-interface using alignment structures on a replicated carrier. The laser carrier is based ... 12/29/05 - 20050286581 - Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device A semiconductor laser device includes a first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending from the mounting portion, a second lead extending along the lead portion of the first lead, and a retention portion made of an insulative ... 12/15/05 - 20050276297 - Optical pickup and optical disk apparatus An optical pickup includes a laser light source configured to emit laser light, an objective lens configured to focus the laser light emitted from the laser light onto an optical disk, and an image-formation magnification rate varying section for varying an image-formation magnification rate at which the laser light is ... 12/08/05 - 20050271104 - Semiconductor laser device and method for manufacturing the same A semiconductor laser device includes: an n-type cladding layer, an active layer, and a p-type cladding layer, each being a III-V group compound semiconductor, supported on a substrate of n-type GaAs, a p-type band discontinuity reduction layer of a III-V group compound semiconductor on the p-type cladding layer, and a ... 12/08/05 - 20050271103 - Optical semiconductor device and method for fabricating the same The optical semiconductor device comprises a lower clad layer 12, optical waveguide layers 14, 16, 18 including an active layer for recombining the carriers. The upper clad layer 20 is mesa stripe configuration having a first mesa portion contacting the contact layer 22 and having a first width, and a ... 12/01/05 - 20050265415 - Laser diode and method of manufacture VCSEL diode comprises a bottom electrode (10), conducting substrate material (11), a bottom mirror (12) formed by a multilayer distributed Bragg reflector (DBR) of certain conductivity and reflectivity RA, and an active region (13) comprising a plurality of layers some of which are quantum wells. It also comprises a top ... 12/01/05 - 20050265414 - Surface-emitting type semiconductor laser, and method for manufacturing the same, optical switch, and optical branching ratio variable element A surface-emitting type semiconductor laser includes a substrate, a first distributed Bragg reflection type mirror formed above the substrate, an active layer formed above the first mirror, a second distributed Bragg reflection type mirror formed above the active layer, and an insulation layer having an opening section that is formed ... 12/01/05 - 20050265413 - Nitride semiconductor laser device A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light ... 12/01/05 - 20050265412 - Surface emitting semiconductor laser diode and manufacturing method thereof A surface emitting semiconductor laser diode includes a substrate, a first reflective layer formed over the substrate, an active layer formed over the first reflective layer, a second reflective layer formed over the active layer, a first conductive layer having an opening therein and formed over the second reflective layer, ... 11/24/05 - 20050259707 - Semiconductor laser diode A semiconductor laser diode is provided, including: an active layer; an upper clad layer formed above the active layer; a first lower clad layer formed below the active layer; a second lower clad layer formed under the first lower clad layer; and a substrate formed under the second lower clad ... 11/24/05 - 20050259706 - High speed optoelectronic subassembly and package for optical devices A high speed optoelectronic subassembly in an optoelectronic package is disclosed that includes a dielectric support having a first electrical trace on a surface thereof and a dielectric member mounted on the surface of the support having a second electrical trace thereon. The support extends laterally a distance greater than ... 11/17/05 - 20050254537 - High power semiconductor laser lighting device A high power semiconductor laser lighting device has a housing, a fan module arranged in an exhaust hole in the housing, a base connected to the bottom wall of the housing and disposed on a side of the fan module, and a semiconductor laser constant-temperature module. The base has a ... 10/27/05 - 20050238074 - Semiconductor laser device and semiconductor laser assembly Semiconductor laser assembly 1 is provided with semiconductor laser device 6 and heat dissipation member 24. Semiconductor laser device 6 includes semiconductor laser element 15, lead-frame 11, lower and upper enclosures 18 and 19 and plate-like spring 21 connected to lead-frame 11. Semiconductor laser element 15 is mounted on lead-frame ... 10/27/05 - 20050238073 - Spatial bandgap modifications and energy shift of semiconductor structures Semiconductor substrate is disclosed having quantum wells having first bandgap, and quantum wells having second bandgap less than second bandgap. Semiconductor structure is disclosed comprising substrate having quantum wells having given bandgap, other quantum wells modified to bandgap greater than given bandgap. Semiconductor substrate is disclosed comprising wafer having quantum ... 10/20/05 - 20050232322 - Semiconductor laser apparatus A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal ... 10/20/05 - 20050232321 - Semiconductor laser apparatus and optical apparatus A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode ... 10/06/05 - 20050220158 - Optical integrated device The present invention is to provide an optical integrated device formed on the GaAs substrate and with reduced dispersion of the optical coupling of the but-joint between the active and the passive devices. The GaAs substrate of the invention is divided into two regions, and the lower cladding layer extends ... 10/06/05 - 20050220157 - Semiconductor laser and method for producing the same Because height H and height h are sufficiently large as shown in FIG. 2, a semiconductor layer formed above the convex part through crystal growth always has thickness smaller than a semiconductor layer formed at the central part of the cavity (concave part existing between two convex parts). That tends ... 09/22/05 - 20050207463 - Semiconductor laser diode and optical module The present invention provides a highly reliable ridge-waveguide semiconductor laser diode and an optical module. The p-side electrode of the ridge-waveguide laser diode has a first conductor layer region and a second conductor layer region formed on the first conductor layer region. At least one of facets of the second ... 09/22/05 - 20050207462 - Semiconductor laser A semiconductor laser is provided, of a configuration that is capable of correcting a difference between refractive indexes when an epitaxial growth is given in an irregular surface condition. A semiconductor laser is formed, which has a semiconductor laser element of a compound semiconductor containing at least Al and In, ... 09/22/05 - 20050207461 - Radiation-emitting semiconductor component A radiation-emitting semiconductor component comprising a semiconductor body (3) with a first active zone (1) and a second active zone (2) arranged above the first active zone, the first active zone being provided for generating a radiation having a first wavelength λ1 (11) and the second active zone being provided ... 09/15/05 - 20050201440 - Semiconductor laser element having ingaas compressive-strained quantum-well active layer In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper cladding layer are formed in this order in a stripe-shaped region on a substrate. A current-blocking layer is formed on both sides ... 09/15/05 - 20050201439 - Semiconductor light emitting device and semiconductor light emitting device module A semiconductor light emitting device capable of easy optical coupling to an optical fiber, etc. and excellent in high power operation characteristics is disclosed. The semiconductor light emitting device is provided by controlling the relation between the thickness and the refractive index of a clad layer and an optical guide ... 09/15/05 - 20050201438 - Method for making a high power semiconductor laser diode Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns ... 09/15/05 - 20050201437 - Semiconductor laser A semiconductor laser is provided having a plurality of layers. The semiconductor laser includes an active region, a P-type semiconductor body adjacent the active region including a P-type semiconductor confinement layer, and an N-type semiconductor body adjacent the active region opposite to the P-type semiconductor body. The N-type semiconductor body ... 09/15/05 - 20050201436 - Method for processing oxide-confined vcsel semiconductor devices A method of manufacturing a vertical cavity surface emitting laser on a substrate by forming a first parallel stack of mirrors on the substrate; forming an active and spacer layer on the first parallel mirror stack; and forming a second parallel mirror stack on the active and spacer layer. The ... 09/08/05 - 20050195877 - Semiconductor laser and apparatus In a semiconductor laser apparatus, semiconductor laser devices are mounted on a loading face of a radiation base portion produced from a radiation material in a mount board, and the radiation base portion and a cap portion constitute an envelope surrounding the semiconductor laser devices. Further, the radiation base portion ... 09/08/05 - 20050195876 - Optoelectronic waveguiding device, structural body including the same, and optical module A server system has servers that can be operated through switching as a primary system and a standby system, and a shared disk unit for storing data accessed by the servers. Each of the servers has a driver that acquires information on a configuration inside the shared disk unit after ... 08/25/05 - 20050185687 - Semiconductor laser element formed on substrate having tilted crystal orientation A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate is tilted from (100) toward (111). When the total thickness of the at least one AlGaInP or ... 08/25/05 - 20050185686 - Nanophotonic devices based on quantum systems embedded in frequency bandgap media The present invention describes nanophotonic materials and devices for both classical and quantum optical signal processing, transmission, amplification, and generation of light, which are based on a set of quantum systems having a discrete energy levels, such as atoms, molecules, or quantum dots, embedded in a frequency bandgap medium, such ... ### FreshPatents.com Support |