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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > With Means To Control Surface Effects

With Means To Control Surface Effects

With Means To Control Surface Effects patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

08/14/14 - 20140225231 - Modulating bow of thin wafers
Apparatus and methods modulate the bowing of thin wafers. According to a method, a wafer is formed of semiconductor material. The wafer has a front side and a back side. A cross-section of the wafer is reduced by thinning material from the front side of the wafer. A plurality of...

05/01/14 - 20140117509 - Metal deposition with reduced stress
Various techniques, methods and devices are disclosed where metal is deposited on a substrate, and stress caused by the metal to the substrate is limited, for example to limit a bending of the wafer....

03/20/14 - 20140077342 - Semiconductor device having buried layer and method for forming the same
Semiconductor devices having a buried layer and methods for forming the same are disclosed. In an exemplary method, a hard mask layer can be provided on a semiconductor substrate. The hard mask layer can have a plurality of through-openings. A plurality of deep trenches can be formed in the semiconductor...

02/20/14 - 20140048911 - Lateral semiconductor device
A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is...

01/09/14 - 20140008770 - Carrier substrate and method for producing semiconductor chips
A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with...

01/02/14 - 20140001605 - Manufacturing method of epitaxial silicon wafer, and epitaxial silicon wafer
A method includes: a backside-oxidation-film-formation step in which an oxidation film is formed on a backside of a silicon wafer; a backside-oxidation-film-removal step in which the oxidation film provided at an outer periphery of the silicon wafer is removed; an argon-annealing step in which the silicon wafer after the backside-oxidation-film-removal...

12/12/13 - 20130328174 - Edge protection of bonded wafers during wafer thinning
A method of edge protecting bonded semiconductor wafers. A second semiconductor wafer and a first semiconductor wafer are attached by a bonding layer/interface and the second semiconductor wafer undergoes a thinning process. As a part of the thinning process, a first protective layer is applied to the edges of the...

12/12/13 - 20130328175 - Method for the hydrogen passivation of semiconductor layers
The present invention relates to a method for the hydrogen passivation of semiconductor layers, wherein the passivation is effected by using an arc plasma source, to the passivated semiconductor layers produced according to the method, and to the use thereof....

10/31/13 - 20130285217 - Substrate treating method, temporary fixing composition and semiconductor device
The invention provides a substrate treating method which can favorably prevent damages to a substrate when the substrate is separated from a support, thus achieving a high yield. The substrate treating method includes, in the sequence set forth, a step 1 of temporarily fixing a substrate onto a support via...

10/24/13 - 20130277810 - Method for forming heat sink with through silicon vias
Semiconductor devices are formed with through silicon vias extending into the semiconductor substrate from a backside surface for improved heat dissipation. Embodiments include forming a cavity in a backside surface of a substrate, the substrate including a gate stack on a frontside surface, and filling the cavity with a thermally...

09/12/13 - 20130234298 - Semiconductor device and method for manufacturing same
According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion...

09/05/13 - 20130228900 - Gate conductor with a diffusion barrier
A gate conductor structure is provided having a barrier region between a N-type device and a P-type device, wherein the barrier region minimizes or eliminates cross-diffusion of dopant species across the barrier region. The barrier region comprises at least one sublithographic gap in the gate conductor structure. The sublithographic gap...

08/29/13 - 20130221496 - Metallic carrier for layer transfer and methods for forming the same
Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate a semiconductor substrate by forming a weakened zone in a donor structure at a predetermined depth to define a transfer layer between an attachment surface and the weakened zone and...

08/29/13 - 20130221497 - Method for the production of a substrate comprising embedded layers of getter material
A method for producing a substrate with buried layers of getter material, including: making a first stack including one layer of a first getter material, arranged on a first support; making a second stack including one layer of a second getter material, arranged on a second support; and bringing the...

08/22/13 - 20130214394 - Semiconductor device
A field plate of a semiconductor device is provided with i) an insulating film that is formed on a surface of the semiconductor substrate, and includes a plurality of first regions, one for each of a plurality of FLR layers, that contact the layers and are arranged at intervals in...

08/08/13 - 20130200501 - In-situ active wafer charge screening by conformal grounding
Embodiments of the invention relate generally to semiconductor wafer technology and, more particularly, to the use of conformal grounding for active charge screening on wafers during wafer processing and metrology. A first aspect of the invention provides a method of reducing an accumulated surface charge on a semiconductor wafer, the...

05/30/13 - 20130134560 - Semiconductor structure comprising moisture barrier and conductive redistribution layer
A semiconductor structure includes semiconductor devices on a substrate, a moisture barrier on the substrate surrounding the semiconductor devices, and a metal conductive redistribution layer formed over the moisture barrier. The metal conductive redistribution layer and the moisture barrier define a closed compartment containing the semiconductor devices....

11/29/12 - 20120299160 - Method of forming contacts for devices with multiple stress liners
Disclosed herein is a method of forming a semiconductor device. In one example, the method includes performing a first process operation to form a first etch stop layer above a first region of a semiconducting substrate where a first type of transistor device will be formed, and forming a first...

11/08/12 - 20120280368 - Laminated structure for semiconductor devices
Articles are described utilizing laminated glass substrates, for example, ion-exchanged glass substrates, with flexible glass or polymers and with semiconductor devices which may be sensitive to alkali migration are described along with methods for making the articles....

11/08/12 - 20120280369 - Method for manufacturing semiconductor device, substrate processing apparatus, and semiconductor device
There is provided a method for manufacturing a semiconductor device, comprising simultaneously or alternately exposing a substrate, which has two or more kinds of thin films having different elemental components laminated or exposed; and performing different modification treatments to the thin films respectively....

08/16/12 - 20120205784 - Growing compressively strained silicon directly on silicon at low temperatures
Compressively strained silicon is epitaxially grown directly onto a silicon substrate at low temperature using hydrogen to engineer the strain level. Hydrogen dilution may be varied during such growth to provide a strain gradient....

08/09/12 - 20120199955 - Package carrier and manufacturing method thereof
A manufacturing method of a package carrier is provided. A first opening communicating an upper surface and a lower surface of a substrate is formed. A heat-conducting element having a top surface and a bottom surface is configured in the first opening and fixed into the first opening via an...

08/09/12 - 20120199956 - Method for recycling a source substrate
The present invention relates to process for recycling a source substrate that has a surface region and regions in relief on the surface region, with the regions in relief corresponding to residual regions of a layer of the source substrate that were not being separated from the rest of the...

08/02/12 - 20120193765 - Emissivity profile control for thermal uniformity
A substrate for processing in a heating system is disclosed. The substrate includes a bottom portion for absorbing heat from a radiating heat source, the bottom portion having a first region having a first emissivity and a second region having a second emissivity less than the first emissivity. The first...

07/12/12 - 20120175750 - Geometry of contact sites at brittle inorganic layers in electronic devices
An electronic device (10, 20, 30, 40) is provided which comprises a substrate (16) supporting an inorganic layer (11) and a joint (13), mechanically coupling a contacting element (14) to the inorganic layer (11). At least a first load distributing layer (12a) is arranged in direct contact with the inorganic...

05/17/12 - 20120119336 - Method for manufacturing bonded wafer
A method for manufacturing a bonded wafer having a semiconductor film on a handle substrate involving the steps of: implanting ions into a semiconductor substrate to form an ion-implanted layer; subjecting the surface of at least one of the semiconductor substrate and the handle substrate to a surface activation treatment;...

04/19/12 - 20120091566 - Semiconductor apparatus and method of fabrication for a semiconductor apparatus
The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a...

03/29/12 - 20120074532 - Semiconductor package with integrated metal pillars and manufacturing methods thereof
A semiconductor package includes a substrate and a semiconductor device. The semiconductor device includes a body having a center, a layer disposed adjacent to the body, and a plurality of conductive pillars configured to electrically connect the semiconductor device to the substrate. The layer defines a plurality of openings. Each...

03/15/12 - 20120061806 - Systems and methods for drying a rotating substrate
A method of drying a surface of a substrate is provided. The method includes supporting a substrate; rotating the substrate about a rotational center point; applying a liquid to the substrate via a liquid dispenser; applying a drying fluid to the substrate via a drying fluid dispenser; moving the drying...

01/26/12 - 20120018855 - Method of producing a heterostructure with local adaptation of the thermal expansion coefficient
A method of producing a heterostructure by bonding at least one first substrate having a first thermal expansion coefficient onto a second substrate having a second thermal expansion coefficient, with the first thermal expansion coefficient being different from the second thermal expansion coefficient. Prior to bonding, trenches are formed in...

10/20/11 - 20110254138 - Low-temperature absorber film and method of fabrication
An improved low-temperature absorber, amorphous carbonitride (ACN) with an extinction coefficient (k) of greater than 0.15, and an emissivity of greater than 0.8 is disclosed. The ACN film can also be characterized as having a minimum of hydrocarbon content as observed by FTIR. The ACN film can be used as...

10/06/11 - 20110241182 - Die seal ring
An improved die seal ring is described which includes at least one break. In the region of the break in the die seal ring, the doping is modified so that the impedance of the electrical path across the break through the substrate is increased. Offsets in the break may also...

09/08/11 - 20110215444 - Package substrates, semiconductor packages having the same, and methods of fabricating the semiconductor packages
A package substrate, a semiconductor package having the same, and a method for fabricating the semiconductor package. The semiconductor package includes a semiconductor chip, a package substrate, and a molding layer. The package substrate provides a region mounted with the semiconductor chip. The molding layer is configured to mold the...

08/25/11 - 20110204489 - Silicon substrate having nanostructures and method for producing the same and application thereof
A method for forming a silicon substrate having a multiple silicon nanostructures includes the steps of: providing a silicon substrate; forming an oxidization layer on the silicon substrate; immersing the silicon substrate in a fluoride solution including metal ions, thereby depositing a plurality of metal nanostructures on the silicon substrate;...

08/18/11 - 20110198736 - Reactive site deactivation against vapor deposition
Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM can be formed on surfaces for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length...

04/14/11 - 20110084366 - Epitaxial wafer and production method thereof
preparing a silicon substrate by machining the silicon crystal, and forming an epitaxial layer at the surface of the silicon substrate....

03/03/11 - 20110049682 - System and method for substrate wafer back side and edge cross section seals
Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first conductivity type is accessed. An epitaxial layer of the first conductivity type is grown on a front surface of the silicon wafer. The epitaxial...

01/13/11 - 20110006405 - Semiconductor device, manufacture method of semiconductor device, and electronic apparatus
A semiconductor device includes a substrate, an electronic component and a resin member. The substrate has a first electrode. The electronic component is provided on the substrate, and has a second electrode electrically connected to the first electrode. The resin member alleviates an external stress to the second electrode of...

12/23/10 - 20100320576 - Die-warpage compensation structures for thinned-die devices, and methods of assembling same
A back-side lamination (BSL) is applied after thinning a microelectronic die. The BSL is configured to be a thermal-expansion complementary structure to a metal wiring interconnect layout that is disposed on the active side of the microelectronic die....

12/16/10 - 20100314723 - Manufacturing of optical structures by electrothermal focussing
This invention relates to methods and devices for the production of optical microstructures or domains in dielectric substrates based on electrothermal focussing. More specifically, the invention relates to a method of introducing a change of dielectric and/or optical properties in a region of an electrically insulating or electrically semiconducting substrate,...

11/04/10 - 20100276788 - Method and device of preventing delamination of semiconductor layers
Embodiments of the present invention describe a method and device of preventing delamination of semiconductor layers in a semiconductor device. The semiconductor device comprises a substrate with an interlayer dielectric (ILD). A protection layer is deposited on the ILD. Next, a getter layer is formed on the protection layer to...

11/04/10 - 20100276789 - Semiconductor device having multiple-layer hard mask with opposite stresses and method for fabricating the same
A semiconductor device includes a hard mask including a first layer and a second layer in contact with each other and having opposite stress types, wherein a difference between initial stresses of the first layer and the second layer is increased so that after a thermal process, the difference between...

09/30/10 - 20100244203 - Semiconductor structure having a protective layer
A semiconductor structure includes a substrate having a first nitride-based semiconductor layer. A pseudomorphic protective layer is formed on the first nitride-based semiconductor layer and a second nitride-based semiconductor layer is formed on the pseudomorphic protective layer. The pseudomorphic protective layer has a thickness that is less than a critical...

09/23/10 - 20100237475 - Neutralization of trapped charge in a charge accumulation layer of a semiconductor structure
A semiconductor structure. The semiconductor structure includes a semiconductor layer, a charge accumulation layer on top of the semiconductor layer, a doped region in direct physical contact with the semiconductor layer; and a device layer on and in direct physical contact with the charge accumulation layer. The charge accumulation layer...

08/26/10 - 20100213580 - Acid-sensitive, developer-soluble bottom anti-reflective coatings
Acid-sensitive, developer-soluble bottom anti-reflective coating compositions are provided, along with methods of using such compositions and microelectronic structures formed thereof. The compositions preferably comprise a crosslinkable polymer dissolved or dispersed in a solvent system. The polymer preferably comprises recurring monomeric units having adamantyl groups. The compositions also preferably comprise a...

08/19/10 - 20100207254 - Strained semiconductor materials, devices and methods therefore
Various applications are directed to a material stack having a strained active material therein. In connection with an embodiment, an active material (e.g. a semiconductor material) is at least initially and partially released from and suspended over a substrate, strained, and held in place. The release and suspension facilitates the...

07/22/10 - 20100181652 - Systems and methods for stiction reduction in mems devices
Systems and methods for reducing stiction between elements of a microelectromechanical systems (MEMS) device during anodic bonding. The MEMS device includes a substrate cover with an optional conductor on its interior surface and the cover is anchored to a first portion of a sensing element. The MEMS device further includes...

07/22/10 - 20100181653 - Method for recycling a substrate, laminated water fabricating method and suitable recycled donor substrate
The invention relates to a method for recycling a substrate with a step-like residue in a first region of its surface, in particular along the edge of the substrate, which protrudes with respect to the surface of a remaining second region of the substrate, and wherein the first region comprises...

06/17/10 - 20100148321 - Micro-electro-mechanical-system device with particles blocking function and method for making same
The present invention discloses a MEMS device with particles blocking function, and a method for making the MEMS device. The MEMS device comprises: a substrate on which is formed a MEMS device region; and a particles blocking layer deposited on the substrate....

04/15/10 - 20100090320 - Structure and method for device-specific fill for improved anneal uniformity
Disclosed are embodiments of a wafer that incorporates fill structures with varying configurations to provide uniform reflectance. Uniform reflectance is achieved by distributing across the wafer fill structures having different semiconductor materials such that approximately the same ratio and density between the different semiconductor materials is achieved within each region...

12/03/09 - 20090294918 - Semiconductor wafer
In a state where a semiconductor wafer is not acted upon by its own weight, a shear stress on a rear surface side portion of the semiconductor wafer is higher than that on a front surface side portion of the semiconductor wafer, in a compression direction. Thereby, sag of the...