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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Including Semiconductor Material Other Than Silicon Or Gallium Arsenide (gaas) (e.g., Pb X Sn 1-x Te) Including Semiconductor Material Other Than Silicon Or Gallium Arsenide (gaas) (e.g., Pb X Sn 1-x Te)Including Semiconductor Material Other Than Silicon Or Gallium Arsenide (gaas) (e.g., Pb X Sn 1-x Te) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/08/07 - 20070257333 - Seeded growth process for preparing aluminum nitride single crystals A method of growing bulk single crystals of an AlN on a single crystal seed is provided, wherein an AlN source material is placed within a crucible chamber in spacial relationship to a seed fused to the cap of the crucible. The crucible is heated in a manner sufficient to ... 08/30/07 - 20070200202 - Phase change memory structure having an electrically formed constriction A PCM structure configurable for use as a nonvolatile storage element includes a first electrode, a first phase change material layer formed on at least a portion of an upper surface of the first electrode, at least one insulating layer formed on an upper surface of the first phase change ... 08/23/07 - 20070194408 - Group iii nitride crystal, crystal growth process and crystal growth apparatus of group iii nitride A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III nitride formed of the group III element and nitrogen from the melt ... 08/16/07 - 20070187801 - Semiconductor device A semiconductor device comprising a semiconductor substrate, a switching element which is provided on the semiconductor substrate, a first interconnect layer which is provided above the semiconductor substrate, a plurality of phase-change memory devices which have phase-change material whose resistance changes by a phase-change due to a temperature change, being ... 06/21/07 - 20070138598 - Resistance variable memory device and method of fabrication Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a ... 03/01/07 - 20070045777 - Micronized semiconductor nanocrystal complexes and methods of making and using same A micronized semiconductor nanocrystal complex including a plurality of semiconductor nanocrystals embedded in a first matrix material wherein the first matrix material is a micronized polymer. The micronized semiconductor nanocrystal complex can be used in or include inks, paints, dyes, LEDs, taggants, tracers and cosmetics. The present application further provides ... 02/22/07 - 20070040240 - Bulk nitride mono-crystal including substrate for epitaxy The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area ... 01/25/07 - 20070018284 - Gallium nitride semiconductor substrate and process for producing the same Dry etching utilizing a halogen plasma is carried out in order to remove the process-transformed layer. The Ga face can be etched off with the halogen plasma. Nevertheless, owing to the dry etching, a problem arises again-surface contamination due to metal particles. To address the problem, wet etching with, as ... 12/07/06 - 20060273429 - Switching element, programmable logic integrated circuit and memory element A switching element with a switching voltage set higher than conventional, which includes an ion conduction layer including tantalum oxide, a first electrode provided in contact with the ion conduction layer, and a second electrode provided in contact with the ion conduction layer and capable of supplying the ion conduction ... 08/10/06 - 20060175682 - Transparent electrode A transparent electrode for use in a gallium nitride-based compound semiconductor light-emitting device having an emission wavelength of 440 nm or less, includes a metal layer disposed in contiguity to a p-type semiconductor layer and a current diffusion layer disposed on the metal layer. The transparent electrode contains substantially no ... 08/10/06 - 20060175681 - Method to grow iii-nitride materials using no buffer layer Disclosed is a method for growing nitride compound semiconductors on sapphire substrates where no low-temperature buffer layer is used. The nitride based compound semiconductor materials and devices grown by the method of the present invention have crystallinity and surface morphology at practical levels with high quality, high stability, and high ... 06/15/06 - 20060125056 - Formation of nanowhiskers on a substrate of dissimilar material A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically flat. Catalytic particles on the substrate surface are ... 06/08/06 - 20060118913 - Phase changeable memory cells and methods of forming the same A phase changeable memory cell is provided. The phase changeable memory cell includes a lower interlayer dielectric layer formed on a semiconductor substrate and a lower conductive plug passing through the lower interlayer dielectric layer. The lower conductive plug is in contact with a phase change material pattern disposed on ... 05/18/06 - 20060102985 - Selection of optimal quantization direction for given transport direction in a semiconductor device A technique for selecting an optimal quantization direction for a given transport direction in a semiconductor device such as a field effect transistor (FET), a method for preparing a wafer for fabricating such a semiconductor device, and the semiconductor device fabricated by the method. A switching time is calculated for ... 05/11/06 - 20060097354 - Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, led head that employs the semiconductor composite apparatus, and image forming apparatus that employs the led head A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. ... 03/16/06 - 20060055000 - Epitaxial wafer and device An epitaxial wafer and a device having improved characteristics are obtained. The epitaxial wafer includes a substrate, a buffer layer formed on the substrate, a light-receiving layer formed on the buffer layer, and a window layer. The light-receiving layer is constituted of an epitaxial film having its lattice constant larger ... 02/02/06 - 20060022308 - Group iii-v compound semiconductor and method for producing the same A Group III-V compound semiconductor includes, at least, a substrate, a buffer layer of the general formula InuGavAlwN (wherein, 0≦u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1) and a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN (wherein, 0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1), in this order, wherein the buffer layer has a ... 01/12/06 - 20060006500 - Iii-nitride materials including low dislocation densities and methods associated with the same Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the ... 09/01/05 - 20050189620 - Manufacturing method for semiconductor device, and system to which semiconductor is applied A high performance semiconductor device that can realize surface protection and surface inactivation and is fabricated using a film formation method and technique that enable improvement of high frequency characteristics, and an electronic device for a communication system including the semiconductor device, are provided. The semiconductor device is characterized in ... 07/28/05 - 20050161772 - Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it A self-supported nitride semiconductor substrate of 10 mm or more in diameter having an X-ray diffraction half width of 500 seconds or less in at least one of a {20-24} diffraction plane and a {11-24} diffraction plane. ... ### FreshPatents.com Support |