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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Avalanche Diode (e.g., So-called "zener" Diode Having Breakdown Voltage Greater Than 6 Volts) > With Means To Limit Area Of Breakdown (e.g., Guard Ring Having Higher Breakdown Voltage) > Subsurface Breakdown

Subsurface Breakdown

Subsurface Breakdown patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

01/25/07 - 20070018283 - Zener diode
A zener diode, including: a semiconductor substrate; a first region of the first conductivity type formed on the surface of the semiconductor substrate; and a second region of the second conductivity type formed on the surface of the semiconductor substrate and included in the first region; and having a pn ...



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