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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Avalanche Diode (e.g., So-called "zener" Diode Having Breakdown Voltage Greater Than 6 Volts) > With Means To Limit Area Of Breakdown (e.g., Guard Ring Having Higher Breakdown Voltage) With Means To Limit Area Of Breakdown (e.g., Guard Ring Having Higher Breakdown Voltage)With Means To Limit Area Of Breakdown (e.g., Guard Ring Having Higher Breakdown Voltage) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/16/06 - 20060255430 - A structure for preventing leakage of a semiconductor device A structure for preventing leakage of a semiconductor device is provided. The structure comprises a conductive layer, for shielding the features beneath thereof, located under a conductive line which crosses over a region having high voltage device. The conductive layer is wider than the conductive line. ... 11/16/06 - 20060255429 - Structure for leakage prevention of a high voltage device A structure for preventing leakage of a high voltage device is provided. The structure comprises a conductive layer, for shielding the features beneath thereof, located under a conductive line which crosses over a region having high voltage device. The conductive layer is wider than the conductive line. ... ### FreshPatents.com Support |