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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Avalanche Diode (e.g., So-called "zener" Diode Having Breakdown Voltage Greater Than 6 Volts) Avalanche Diode (e.g., So-called "zener" Diode Having Breakdown Voltage Greater Than 6 Volts)Avalanche Diode (e.g., So-called "zener" Diode Having Breakdown Voltage Greater Than 6 Volts) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.05/31/07 - 20070120226 - Avalanche photodiode An avalanche photodiode has improved low-noise characteristics, high-speed response characteristics, and sensitivity. The avalanche photodiode includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a semiconductor multiplication layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a semiconductor ... 05/03/07 - 20070096261 - Semiconductor device and manufacturing method thereof In a conventional semiconductor device, there is a problem that zener diode characteristics vary due to a crystal defect on a silicon surface, and the like. In a semiconductor device of the present invention, an N type epitaxial layer 4 is formed on a P type single crystal silicon substrate ... 04/26/07 - 20070090488 - High-efficiency matrix-type led device A high-efficiency matrix-type LED device comprises an epitaxial wafer on which a plurality of independently insulated LEDs are formed by a method of manufacturing integrated circuits; and a conducting line mounted on each one of the LEDs by an evaporation method for forming a large-sized matrix-type LED unit capable of ... 12/21/06 - 20060284283 - Semiconductor device and manufacturing method thereof A -Zener diode includes a first conductivity type semiconductor region and a second conductivity type semiconductor region which form pn junction, an insulating film for covering the junction part of the semiconductor regions, a first electrode electrically connected with the first conductivity type semiconductor region, and a second electrode electrically ... 09/21/06 - 20060208340 - Protection device for handling energy transients A protection device for handling energy transients includes a plurality of basic unit Zener diodes connected in series to achieve a desired breakdown voltage. Each of the basic unit Zener diodes is formed in a first-type substrate. Each of the basic unit Zener diodes comprises a second-type well formed in ... 06/15/06 - 20060125053 - Zener diode and methods for fabricating and packaging same A zener diode and methods for fabricating and packaging same are disclosed, whereby contact hole forming process exposing a diffusion layer is removed to enable to simplify the fabricating process, and the diffusion length not contacting the electrode line is determined by the crosswise length toward which the impurity is ... 03/16/06 - 20060054999 - Semiconductor device A semiconductor device includes a Zener diode connected between an outside terminal and ground, and a resistor connected to the Zener diode in series. The Zener diode and the resistor divide a noise voltage, so that the semiconductor device can have the high noise tolerance even if it uses the ... 12/15/05 - 20050275065 - Diode with improved energy impulse rating An energy pulse clamping semiconductor diode includes a substrate having carriers of a first type of conductivity in a first, high concentration level (e.g. n++), a first major face and a second major face opposite to the first major face; a layer of semiconductor material having carriers of the first ... 09/15/05 - 20050199982 - High power diode utilizing secondary emission A high power diode includes a cathode for emitting a primary electron discharge, an anode, and a porous dielectric layer, e.g. a honeycomb ceramic, positioned between the cathode and the anode for receiving the primary electron discharge and emitting a secondary electron discharge. The diode can operate at voltages 50 ... ### FreshPatents.com Support |