REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
 
|
|
Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Integrated Circuit Structure With Electrically Isolated Components > Passive Components In Ics > Including Capacitor Component Including Capacitor ComponentIncluding Capacitor Component patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/24/08 - 20080017950 - Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby A ruthenium (Ru) film is formed on a substrate as part of a two-stage methodology. During the first stage, the Ru film is formed on the substrate in a manner in which the Ru nucleation rate is greater than the Ru growth rate. During the second stage, the Ru film ... 01/10/08 - 20080006905 - Method for production of an integrated circuit bar arrangement, in particular comprising a capacitor assembly, as well as an integrated circuit arrangement A method for production of an integrated circuit arrangement which contains a capacitor. A dielectric layer is structured with the aid of a two-stage etching process, and with the aid of a hard mask. In the case of an electrically insulating hard mask, the hard mask is removed again. In ... 01/03/08 - 20080001255 - Semiconductor device A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the ... 12/27/07 - 20070296059 - Semiconductor device A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the ... 11/15/07 - 20070262416 - Method and structure for creation of a metal insulator metal capacitor The invention is directed to an improved capacitor that reduces edge defects and prevents yield failures. A first embodiment of the invention comprises a protective layer adjacent an interface of a conductive layer with the insulator, while the second embodiment of the invention comprises a protective layer on an insulator ... 10/18/07 - 20070241424 - Vertical parallel plate capacitor using spacer shaped electrodes and method for fabrication thereof A capacitor structure uses an aperture located within a dielectric layer in turn located over a substrate. A pair of conductor interconnection layers embedded within the dielectric layer terminates at a pair of opposite sidewalks of the aperture. A pair of capacitor plates is located upon the pair of opposite ... 10/11/07 - 20070235838 - Flexible metal-oxide-metal capacitor design A flexible scheme for forming a multi-layer capacitor structure is provided. The multi-layer capacitor structure includes a first electrode and a second electrode extending through at least one metallization layer, wherein the first electrode and the second electrode are separated by dielectric materials. In each of the metallization layers, the ... 10/04/07 - 20070228517 - Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same A process of forming a thin-film capacitor that includes sol-gel patterning of a dielectric thin film on a first electrode, lift-off removal of unwanted dielectric thin film, and mating the dielectric thin film with a second electrode. The thin-film capacitor exhibits a substantially uniform heat-altered morphology along a line defined ... 09/27/07 - 20070222031 - Capacitor structure A capacitor structure with a cross-coupling design is provided. In the capacitor structure, conductive lines or electrode plates are coupled together by cross coupling an electrode above or below or aside the other electrode. By cross coupling and fewer vias, the largest capacitance value can be obtained within a minimum ... 09/27/07 - 20070222030 - Low temperature deposition and ultra fast annealing of integrated circuit thin film capacitor Some embodiments of the invention include thin film capacitors formed on a package substrate of an integrated circuit package. At least one of the film capacitors includes a first electrode layer, a second electrode layer, and a dielectric layer between the first and second electrode layers. Each of the first ... 09/13/07 - 20070210417 - Chip carrier with reduced interference signal sensitivity Carrier including a substrate having a first interface with first contact holes, and a second interface, which lies opposite the first interface, with second contact holes. The substrate includes a substrate body and electrically conductive contact channels formed therein, wherein each of the contact channels electrically conductively connects a first ... 09/13/07 - 20070210416 - Capacitor structure A capacitor structure has a plurality of stacked conductive patterns, and each conductive pattern has a closed conductive ring, a plurality of major conductive bars arranged in parallel and electrically to the closed conductive ring, and a plurality of minor conductive bars arranged alternately with the major conductive bars and ... 08/23/07 - 20070194407 - Semiconductor device and manufacturing the same A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at ... 08/23/07 - 20070194406 - Fixed parallel plate mems capacitor microsensor array A fixed parallel plate micro-mechanical systems (MEMS) based sensor is fabricated to allow a dissolved dielectric to flow through a porous top plate, coming to rest on a bottom plate. A post-deposition bake ensures further purity and uniformity of the dielectric layer. In one embodiment, the dielectric is a polymer. ... 08/09/07 - 20070181973 - Capacitor structure A capacitor structure including a plurality of conductive layers, a dielectric layer and a plurality of contacts is disclosed. The conductive layers are stacked, and each conductive layer has a first conductive pattern and a second conductive pattern. The dielectric layer is disposed between the first conductive pattern and the ... 08/09/07 - 20070181972 - Integrated circuit structures with silicon germanium film incorporated as local interconnect and/or contact Disclosed are integrated circuit structures each having a silicon germanium film incorporated as a local interconnect and/or an electrical contact. These integrated circuit structures provide improved local interconnects between devices and/or increased capacitance to devices without significantly increasing structure surface area or power requirements. Specifically, disclosed are integrated circuit structures ... 07/26/07 - 20070170546 - Back end thin film capacitor having both plates of thin film resistor material at single metallization layer An integrated circuit back end capacitor structure includes a first dielectric layer on a substrate, a thin film bottom plate on the first dielectric layer, and a second dielectric layer on the first dielectric layer and the bottom plate, and a thin film top plate disposed on the second dielectric ... 07/19/07 - 20070164395 - Chip package with built-in capacitor structure A chip package with built-in capacitor structure including an integrated circuit (IC) unit, a capacitor unit, a carrier and a molding compound is provided. The capacitor unit is disposed on the IC unit and includes a first metal foil, a second metal foil, and a dielectric layer disposed between the ... 07/05/07 - 20070152301 - Array capacitors for broadband decoupling applications, and methods of operating same An integrated broadband array capacitor includes at least two regions with varying capacitance and response times. The broadband array capacitor is disposable on a socket or is integral with a socket. A method of operating the broadband array capacitor includes responding to load transients from each of the at least ... 06/28/07 - 20070145528 - Power dissipation-optimized high-frequency coupling capacitor and rectifier circuit A power dissipation-optimized high-frequency coupling capacitor is provided for a rectifier circuit as well as a power dissipation-optimized high-frequency rectifier circuit. The elements of the rectifier stages of the inventive high-frequency rectifier circuit are disposed in an optimized manner regarding space such that the coupling capacitors are connected directly to ... 06/28/07 - 20070145527 - Semiconductor device A semiconductor device has an electrode pad, a capacitor and a substrate. The substrate has a given area on which the electrode pad and the capacitor are arranged. The electrode pad and the capacitor are arranged on the substrate so that each of at least two sides of the capacitor ... 06/14/07 - 20070132063 - Integrated thin film capacitors with adhesion holes for the improvement of adhesion strength In an embodiment, a substrate includes a thin film capacitor embedded within. In an embodiment, a plurality of adhesion holes extend through the thin film capacitor. These adhesion holes may improve the adhesion of the capacitor to other portions of the substrate. ... 06/14/07 - 20070132062 - Electronic apparatus interconnect routing and interconnect routing method for minimizing parasitic resistance Method and apparatus are provided for routing interconnects of a dual-gate electronic device operating in a differential configuration. An electronic apparatus formed on a substrate is provided comprising a first interconnect (40, 42, 44) configured to couple to a first region of the substrate, a first gate (22, 24, 26, ... 06/14/07 - 20070132061 - Mim capacitor in a copper damascene interconnect A metal-insulator-metal capacitor formed in a multilevel semiconductor device utilizes the copper interconnect levels of the semiconductor device as parts of the capacitor. A lower capacitor plate consists of a copper interconnect level and a first metal layer formed on the copper interconnect level by selective deposition methods. The upper ... 06/07/07 - 20070126079 - Nano-wire capacitor and circuit device therewith A capacitor comprises a first electrode comprised of an electroconductive nano-wire, a dielectric layer partly covering the peripheral face of the first electrode, and a second electrode covering the peripheral face of the dielectric layer. In a circuit device employing the capacitor, a plurality of the capacitors are arranged roughly ... 06/07/07 - 20070126078 - Interdigitized capacitor An interdigitized capacitor comprising first and second electrodes. The first electrode comprises two combs symmetrical to a first mirror plane. The fingers of the combs extend toward the first mirror plane. The second electrode comprises two combs and a linear plate. The combs are symmetrical to a second mirror plane ... 05/31/07 - 20070120222 - Method for manufacturing semiconductor silicon substrate and apparatus for manufacturing the same This invention provides a method for manufacturing a semiconductor silicon substrate by use of carbon dioxide in a supercritical state, which method is capable of making the semiconductor silicon substrate highly reliable one. Specifically, this invention provides a method for manufacturing a semiconductor silicon substrate including at least two of: ... 05/17/07 - 20070108554 - De-coupling capacitors produced by utilizing dummy conductive structures integrated circuits A de-coupling capacitor module using dummy conductive elements in an integrated circuit is disclosed. The de-coupling module comprises at least one circuit module having one or more active nodes, and at least one dummy conductive element unconnected to any active node, and separated from a high voltage conductor or a ... 05/17/07 - 20070108553 - Thin-film device and method of manufacturing same A thin-film device comprises a substrate and a capacitor provided on the substrate. The capacitor incorporates: a lower conductor layer; a dielectric film a portion of which is disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The lower conductor layer has a ... 05/17/07 - 20070108552 - Design of low inductance embedded capacitor layer connections The present invention discloses capacitors having via connections and electrodes designed such that they provide a low inductance path, thus reducing needed capacitance, while enabling the use of embedded capacitors for power delivery and other uses. One embodiment of the present invention discloses a capacitor comprising the following: a top ... 05/10/07 - 20070102788 - Multi-terminal capacitor A multi-terminal capacitor includes a first capacitor plate, a second capacitor plate in parallel with the first capacitor plate, and a third capacitor plate in parallel with the first and second capacitor plates. The first, second and third capacitor plates are separated from each other by dielectric material, such that ... 05/10/07 - 20070102787 - Capacitor integrated in a structure surrounding a die An integrated circuit comprises a chip including a circuit area surrounded by a peripheral area, the peripheral area extending to an edge of the chip. The integrated circuitry is disposed within the circuit area. No active circuit is disposed within the peripheral area. A barrier is disposed within the peripheral ... 05/03/07 - 20070096254 - Multilayer ceramic capacitor with internal current cancellation and bottom terminals Low inductance capacitors include electrodes that are arranged among dielectric layers and oriented such that the electrodes are substantially perpendicular to a mounting surface. Vertical electrodes are exposed along a device periphery to determine where termination lands are formed, defining a narrow and controlled spacing between the lands that is ... 05/03/07 - 20070096253 - Integrated capacitor with a high breakdown voltage A capacitor incorporated into an integrated electronic circuit comprises two plates and a series of intermediate layers placed between the plates. The intermediate layers are alternately insulating layers and conducting layers, and each conducting layer is electrically isolated from the rest of the circuit. Such a capacitor may have a ... 05/03/07 - 20070096252 - Multi-surfaced plate-to-plate capacitor and method of forming same A plate to plate capacitor has a first plate, a second plate, and an insulating medium separating the first plate from the second plate. The first plate and the second plate are adapted and arranged to form an interlaced structure in which multiple capacitance surface areas in different planes, such ... 04/19/07 - 20070085166 - Printed circuit board with film capacitor embedded therein and method for manufacturing the same The invention provides a PCB with a thin film capacitor embedded therein and a method for manufacturing the same. The PCB includes a lower electrode formed on an insulating substrate; an amorphous paraelectric film formed on the lower electrode via low temperature film formation; a buffer layer formed on the ... 04/19/07 - 20070085165 - Capacitor, semiconductor device including the capacitor and methods of fabricating the same A capacitor, a semiconductor device and methods of fabricating the same are disclosed. The capacitor may include a lower electrode, a dielectric layer covering an upper surface of the lower electrode and having a width wider than that of the lower electrode and an upper electrode covering an upper surface ... 04/05/07 - 20070075397 - On-chip capacitor structure A first capacitor is formed on a substrate and connected to a first differential node of a differential circuit, and a second capacitor is formed on the substrate and connected to a second differential node of the differential circuit. A third capacitor is connected between the first differential node and ... 03/15/07 - 20070057344 - Embedded capacitor with interdigitated structure An embedded capacitors with interdigitated structure for a package carrier or a printed circuit board comprises a plurality of stacked conductive layers, at least one first via connecting structure and at least one second via connecting structure. In order to enhance the capacitance and the layout efficiency, this case fully ... 03/15/07 - 20070057343 - Integration of a mim capacitor over a metal gate or silicide with high-k dielectric materials A Metal Insulator-Metal (MIM) capacitor is formed on a semiconductor substrate with a base comprising a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having exterior surfaces coplanar with the semiconductor substrate. An ... 03/08/07 - 20070052065 - Semiconductor device and method of manufacturing the same A semiconductor device comprising a substrate and a ferroelectric capacitor formed on the substrate. The ferroelectric capacitor includes a lower electrode, an upper electrode and a ferroelectric film interposed between the lower and upper electrodes. The ferroelectric capacitor having sidewalls receded from sidewalls of the upper electrode. ... 03/01/07 - 20070045774 - Tan integrated circuit (ic) capacitor A capacitor is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor generally comprises a top conductive plate, a capacitor dielectric and a bottom conductive plate that respectively comprise a patterned layer of tantalum nitride TaN, a layer of a nitride based material and ... 02/15/07 - 20070034989 - Capacitive element, method of manufacture of the same, and semiconductor device A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an ... 02/15/07 - 20070034988 - Metal-insulator-metal (mim) capacitors formed beneath first level metallization and methods of forming same A metal-insulator-metal (MIM) capacitor for an integrated circuit may be provided on the interlayer insulating layer and covered by a inter-metal dielectric (IMD) layer. This IMD layer has at least a first opening therein that exposes an upper surface of a first electrode of the MIM capacitor. This first opening ... 02/15/07 - 20070034987 - Photocathode structure and operation A novel photocathode employing a rectifying junction is described that permits color imaging extending applications for photocathodes in various instruments and night vision devices. ... 01/18/07 - 20070013029 - Semiconductor device and mim capacitor An MIM capacitor comprises first and second conductor patterns embedded in a first interlayer insulation film so as to extend continuously in a mutually opposing relationship and forming a part of a comb-shaped capacitor pattern, and third and fourth conductor patterns formed in a second interlayer insulation film separated from ... 01/18/07 - 20070013028 - Semiconductor device and method of manufacturing the same A semiconductor device 1 includes an interconnect 12, a conductive layer 14 (first conductive layer), an insulating layer 20 (first insulating layer), another conductive layer 30 (second conductive layer), another insulating layer 40 (second insulating layer), a via plug 52 (first via plug), and another via plug 54 (second via ... 01/18/07 - 20070013027 - Semiconductor device and method of manufacturing the same In the semiconductor device composing MOS transistor on which impurities are added from the surface of a P-type substrate, the region of immediate below a gate layer is the P-type substrate on which the impurities are not added, and first and second MOS devices, having an N-type diffusion layer are ... 01/18/07 - 20070013026 - Varactor structure and method for fabricating the same A varactor structure with high quality factor and good linearity, and a method for fabricating the same are disclosed. According to the method, an additional ion implantation is performed between a first electrode ion implantation and a second electrode ion implantation to form a high doped region. In other words, ... 01/11/07 - 20070007624 - Method for fabricating a capacitor The present invention relates to a method of fabricating a capacitor in a semiconductor substrate. The capacitor is fabricated such that the capacitor comprises: a trench inside a substrate, the trench having a lower region and an upper region, wherein the trench's diameters in the lower region is larger than ... 01/04/07 - 20070001261 - Substrate and manufacturing method thereof A substrate is disclosed that includes a base material, a first capacitor arranged on the base material, and a second capacitor arranged on the base material near the first capacitor. The first capacitor is realized by a lower electrode, a first dielectric layer, and a first upper electrode; and the ... 01/04/07 - 20070001260 - Reducing parasitic mutual capacitances A method to reduce parasitic mutual capacitances in embedded passives. A first capacitor is formed by first and second electrodes embedding a dielectric layer. A second capacitor is formed by third and fourth electrodes embedding the dielectric layer. The third and first electrodes are etched from a first metal layer. ... 01/04/07 - 20070001259 - Thin film capacitors and methods of making the same An apparatus including a first electrode; a second electrode; a first and second ceramic material disposed between the first electrode and the second electrode, the second ceramic material having a greater electrical conductivity than the first ceramic material. A method including forming a first ceramic material film and a different ... 12/21/06 - 20060284280 - Electrodes, inner layers, capacitors, electronic devices and methods of making thereof A method of embedding thick-film fired-on-foil capacitors includes entirely covering the dielectric with an encapsulating electrode to avoid cracking in the dielectric due to shrinkage and temperature coefficient of expansion differences between the electrode and dielectric. ... 12/14/06 - 20060278954 - Semiconductor device having interlayer insulating film covered with hydrogen diffusion barrier film and its manufacture method An interlayer insulating film made of insulating material is formed on a semiconductor substrate. A hydrogen diffusion barrier film is formed on the interlayer insulating film, the hydrogen diffusion barrier film being made of material having a higher hydrogen diffusion barrier function than a hydrogen diffusion barrier function of material ... 12/07/06 - 20060273427 - Vertical metal-insulator-metal (mim) capacitors An MIM capacitor structure having a metal structure formed thereover is provided. A dielectric layer is disposed over the metal structure and a top layer is disposed over the dielectric layer. A capacitance trench is formed through the top layer and into the dielectric layer. Respective bottom electrodes are formed ... 12/07/06 - 20060273426 - Semiconductor device and method for manufacturing semiconductor device A semiconductor device with a capacitor comprises a lower electrode, a dielectric and an upper electrode on the dielectric layer. The dielectric layer comprising one or more polycrystalline tantalum oxide layers and one or more separation layers, wherein the polycrystalline tantalum oxide layers and the separation layers are alternately stacked, ... 12/07/06 - 20060273425 - High density capacitor structure A capacitor structure for an integrated circuit having at least first, second and third layers, with each layer having first and second conductors, includes multiple sidewall capacitors formed between sidewalls of the first conductor and the second conductor in each layer. Several inter-layer capacitors are formed between the first and ... 11/30/06 - 20060267142 - Capacitor device, semiconductor devioce, and setting method of terminal capacitance of pad electrode thereof A capacitor device comprising: a first wiring region disposed at a predetermined location in a wiring layer on a semiconductor substrate, a second wiring region disposed in a vicinity of the first wiring region and insulated from the first wiring region, at least one first via formed by embedding conductive ... 11/30/06 - 20060267141 - Semiconductor device and manufacturing method thereof An object of the invention is to reduce an area occupied by a capacitor in a circuit in a semiconductor device, and to downsize a semiconductor device on which the capacitor and an organic memory are mounted. The organic memory and the capacitor, included in a peripheral circuit, in which ... 11/30/06 - 20060267140 - Electrode layer for capacitors, method of manufacturing the electrode layer, unit sensor using the electrode layer, and tactile sensor using the unit sensor Disclosed herein are an electrode layer for capacitors, a method of manufacturing the electrode layer, a unit sensor using the electrode layer, and a tactile sensor using the unit sensor. The electrode layer comprises a polymer substrate, an electrode formed on the polymer substrate, and a signal transmission line formed ... 11/30/06 - 20060267139 - Method of manufacturing a semiconductor device A semiconductor substrate is provided comprising a plurality of contact pads arranged on a horizontal surface of the semiconductor substrate. Pillars of a first sacrificial material are formed on the contact pads. A first dielectric layer is deposited thus covering at least said pillars. A first conductive layer is deposited ... 11/23/06 - 20060261442 - Semiconductor device and manufacturing the same A semiconductor device includes a transmission power amplifier having cascaded MOSFET amplification stages disposed over a main surface of a semiconductor substrate. A CMOSFET control circuit controls the amplification stages. A first capacitor is also provided having upper and lower metal film electrodes formed over the main surface of the ... 11/23/06 - 20060261441 - Process for forming a low carbon, low resistance metal film during the manufacture of a semiconductor device and systems including same A method for forming a conductive feature comprises forming a metal film such as ruthenium then annealing the film in an atmosphere comprising a hydrogen-rich gas such as ammonia, hydrogen, borane, or diborane, or in another gas such as carbon monoxide. The anneal may decrease the carbon content of the ... 11/23/06 - 20060261440 - Methods of forming a plurality of capacitors, and integrated circuitry comprising a pair of capacitors The invention includes methods and integrated circuitry. Pillars project outwardly from openings in a first material over individual capacitor storage node locations. Insulative material is deposited over the first material laterally about sidewalls of the projecting pillars, and is anisotropically etched effective to expose underlying first material and leave electrically ... 11/23/06 - 20060261439 - Capacitor structure A capacitor structure including a first electrode set and a second electrode set is provided. The first electrode set comprises a plurality of first stripe electrodes, which are parallel to each other, and a first coupling circuit. The first coupling circuit is coupled to a part of stripe electrodes, wherein ... 11/16/06 - 20060255428 - Semiconductor device and a method of manufacturing the same A capacitor has an MIM (Metal Insulator Metal) structure comprising a lower electrode formed in the interior of an electrode trench which is formed in an interlayer insulating film, a dielectric film formed over the lower electrode, and an upper electrode formed over the dielectric film. The upper electrode and ... 11/16/06 - 20060255427 - Integrated circuit comprising at least one capacitor and process for forming the capacitor An integrated circuit includes at least one capacitor that is formed on a layer provided with at least one first trench. The capacitor, which is provided with a dielectric layer that separates two electrodes, conforms to the shape of the first trench, but leaves a part of the first trench ... 11/09/06 - 20060249812 - Capacitor cell, semiconductor device and process for manufacturing the same A capacitor cell for reducing noise in a high drive cell includes a plurality of vias for supplying power to an interconnection layer positioned over the capacitor cell from an upper interconnection layer, so that the resistance of the power supply path is reduced. ... 11/09/06 - 20060249811 - Composition for thin film capacitance element, insulating film of high dielectric constant, thin film capacitance element, thin film laminated capacitor and method for manufacturing thin film capacitance element A thin film capacitance element composition, wherein a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface is expressed by a composition formula of (Bi2O2)2+ (Am−1 Bm O3m+1)2− or Bi2Am−1 Bm O3m+3, wherein “m” is an even number, “A” is at least one element selected ... 11/02/06 - 20060244100 - Atomic layer deposited zirconium silicon oxide films A dielectric layer containing an atomic layer deposited zirconium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. Embodiments include forming zirconium silicates as dielectric layers in devices in an ... 10/26/06 - 20060237820 - Biasing device for low parasitic capacitance in integrated circuit applications The present invention is directed to an apparatus and method for reducing a parasitic capacitance in an integrated circuit. The apparatus includes a substrate and a biasing device. The substrate has a circuit disposed thereon, wherein a first capacitance exists between the substrate and an element of the circuit. The ... 10/26/06 - 20060237819 - Semiconductor device A semiconductor device includes a capacitor with an MIM structure, by which the dimensional accuracy of the device is improved, and a stable capacitance value is given. The semiconductor device 100 includes: a semiconductor substrate 102; a capacitor forming region 130 in which an MIM capacitor is formed, which has ... 10/05/06 - 20060220178 - Semiconductor device and method of manufacturing the same Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to ... 10/05/06 - 20060220177 - Reduced porosity high-k thin film mixed grains for thin film capacitor applications A method including forming a layer of a first ceramic material on a substrate; and after forming the layer, forming a second ceramic material on the layer of the first ceramic material, the formed second ceramic material including an average grain size less than a grain size of the first ... 10/05/06 - 20060220176 - High-k thin film grain size control A method including depositing a suspension of a colloid comprising an amount of nano-particles of a ceramic material on a substrate; and thermally treating the suspension to form a thin film. A method including depositing a plurality of nano-particles of a ceramic material to pre-determined locations across a surface of ... 10/05/06 - 20060220175 - Organic substrates with embedded thin-film capacitors, methods of making same, and systems containing same A thin-film capacitor assembly includes two plates that are accessed through deep and shallow vias. The thin-film capacitor assembly is able to be coupled with a spacer and an interposer. The thin-film capacitor assembly is also able to be stacked with a plurality of thin-film capacitor assemblies. The thin-film capacitor ... 09/28/06 - 20060214264 - Differential variable capacitors and their applications An integrated circuit design for differential variable capacitors uses an integration method to integrate an integrated circuit having differential variable capacitors as a whole, and takes the parasitic effect into consideration for the manufacturing process to lower the circuit inaccuracy and reduce the chip size effectively. Such arrangement lowers the ... 09/28/06 - 20060214263 - Multilayer electronic component and manufacturing method thereof Internal electrode layers are superimposed in a dielectric substrate 1 at intervals. Step absorption layers are respectively provided on lateral sides of the internal electrode layers. A side portion of the internal electrode layer forms an inclined surface, and the step absorption layer is superimposed so as to partially overlap ... 09/28/06 - 20060214262 - Capacitor with carbon nanotubes In one embodiment, a capacitor comprises a substrate defining a first electrical terminal; a catalyst layer disposed on the substrate; a plurality of carbon nanotubes disposed on the catalyst layer; a dielectric layer disposed over the plurality of carbon nanotubes; and a conductive layer disposed on the dielectric layer and ... 09/21/06 - 20060208339 - Semiconductor device and mim capacitor An MIM capacitor comprises first and second conductor patterns embedded in a first interlayer insulation film so as to extend continuously in a mutually opposing relationship and forming a part of a comb-shaped capacitor pattern, and third and fourth conductor patterns formed in a second interlayer insulation film separated from ... 09/14/06 - 20060202303 - Package configuration and manufacturing method enabling the addition of decoupling capacitors to standard package designs The present invention is directed to a method of fabricating an integrated circuit package having decoupling capacitors using a package design conceived for use without decoupling capacitors. The package is implemented with a minimal redesign of the original design and not requiring any redesign of the signal trace pattern. The ... 09/07/06 - 20060197184 - Capacitor parts A capacitor parts of the present invention, includes a substrate, a plurality of capacitor elements arranged on the substrate and composed of a lower electrode, a dielectric layer, and an upper electrode respectively, a lower electrode rewiring layer formed over the plurality of capacitor elements and connected electrically to lower ... 09/07/06 - 20060197183 - Improved mim capacitor structure and process An improved MIM capacitor structure and method where a selective plating process is used to form the capping layer on the copper capacitor electrodes. The metallic passivation layers prevent copper diffusion and enhance the reliability of the MIM capacitor. ... 08/17/06 - 20060180894 - Semiconductor memory device and its manufacturing method A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work ... 08/03/06 - 20060170073 - Capacitor with high breakdown field The capacitor is a thin-film capacitor comprising two metal electrodes separated by a dielectric. The dielectric is formed by superposition of at least two sub-layers of preferably perovskite-based dielectric material. Two adjacent superposed dielectric sub-layers are separated by an electrically insulated metal intermediate layer, for example made of platinum. Using ... 07/20/06 - 20060157821 - Spray coating of cathode onto solid electrolyte capacitors A process for forming a capacitor. The process includes the steps of forming an anode of a valve metal. A dielectric layer is formed on the valve metal. A conducting layer is formed on the dielectric layer wherein the conducting layer is the cathode. A carbon layer is sprayed onto ... 07/20/06 - 20060157820 - Production of an integrated capacitor A process for producing a capacitor integrated into an electronic circuit comprises the formation of a trench in a substrate through a conductive portion similar to an MOS transistor gate. Alternating conductive, insulating and conductive layers are deposited inside the trench T in order to form a lower electrode, a ... 07/13/06 - 20060151852 - In-situ formation of metal insulator metal capacitors cross reference to related applications The invention describes an in-situ method of fabricating a metal insulator metal (MIM) capacitor and products formed by the same. The method utilizes atomic layer deposition (ALD) or metal-organic chemical vapor deposition (MOCVD). In the method, a metal precursor is sequentially reacted with a nitrogen source, oxidant, and then a ... 07/06/06 - 20060145295 - Metal-insulator-metal (mim) capacitor A metal-insulator-metal (MIM) capacitor is made according to a copper dual-damascene process. A first copper or copper alloy metal layer if formed on a substrate. A portion of the first metal layer is utilized as the lower plate of the MIM capacitor. An etch stop dielectric layer is used during ... 07/06/06 - 20060145294 - Methods of forming capacitors A method of forming a capacitor includes forming a conductive metal first electrode layer over a substrate, with the conductive metal being oxidizable to a higher degree at and above an oxidation temperature as compared to any degree of oxidation below the oxidation temperature. At least one oxygen containing vapor ... 07/06/06 - 20060145293 - Semiconductor device and method for fabricating the same A semiconductor device and a method for fabricating the same are provided. The method includes: forming a contact plug passing through an inter-layer insulation layer; sequentially forming a lower electrode layer, a dielectric layer and an upper electrode layer on the inter-layer insulation layer; patterning the upper electrode layer; patterning ... 06/29/06 - 20060138595 - Semiconductor device and method of manufacturing the same Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor structure formed above the semiconductor substrate and comprising a first electrode, a second electrode provided below the first electrode, a third electrode provided below the second electrode, a first dielectric film provided between the first electrode and the second ... 06/29/06 - 20060138594 - Method of improved high k dielectric - polysilicon interface for cmos devices Methods for forming dielectric layers over polysilicon substrates, useful in the construction of capacitors and other semiconductor circuit components are provided. A self-limiting nitric oxide (NO) anneal of a polysilicon layer such as an HSG polysilicon capacitor electrode, at less than 800° C., is utilized to grow a thin oxide ... 06/29/06 - 20060138593 - Capacitor of semiconductor device and manufacturing method thereof In a capacitor of a semiconductor device, a bottom electrode is formed on a substrate and has an uneven top surface. An interlayer insulation layer is formed on the substrate and has a via hole exposing the top surface of the bottom electrode. A dielectric layer is formed unevenly on ... 06/29/06 - 20060138592 - Method of forming on-chip decoupling capacitor with bottom electrode layer having surface roughness On-chip decoupling capacitor structures, and methods of fabricating such decoupling capacitors are disclosed. On-chip decoupling capacitors help to reduce or prevent L di/dt voltage droop on the power grid for high surge current conditions. The inclusion of one or more decoupling capacitors on a chip, in close proximity to the ... 06/29/06 - 20060138591 - Power core devices and methods of making thereof The present invention relates to a device comprising a power core wherein said power core comprises: at least one embedded singulated capacitor layer containing at least one embedded singulated capacitor; and at least one planar capacitor laminate; wherein said planar capacitor laminate serves as a low inductance path to supply ... 06/29/06 - 20060138590 - Electronic parts and method for manufacture thereof An electronic device having an element body comprising an internal electrode layer, wherein the internal electrode layer includes an alloy, the alloy contains a nickel (Ni) element and at least one kind of element selected from ruthenium (Ru), rhodium (Rh), rhenium (Re) and platinum (Pt), and a content of each ... 06/15/06 - 20060125048 - Integrated semiconductor device and method of manufacturing the same An integrated semiconductor device comprising an analog integrated circuit or mixed signal integrated circuit having a capacitor, wherein the dielectric film of the capacitor is a laminated film consisting of a first dielectric film essentially composed of aluminum oxide and a second dielectric film essentially composed of crystallized niobium oxide. ... 06/08/06 - 20060118907 - Semiconductor device and method for manufacturing the same Disclosed is a metal-insulator-metal (MIM) capacitor structure formed by a metal interconnection process of trench-exposed metal layers formed on stacked interlayer insulating layers. The MIM capacitor uses a conductive layer conformally formed on the metal interconnection and/or trench regions to enlarge constituent electrode surface areas. ... 06/01/06 - 20060113632 - Semiconductor device and voltage regulator A semiconductor device having a chip size package is disclosed. The chip size package comprises a semiconductor chip having at least a bonding pad, at least a terminal of said chip size package and a reroute trace formed between the bonding pad and the terminal on said chip size package. ... 06/01/06 - 20060113631 - Structure of embedded capacitors and fabrication method thereof A new structure is provided to replace the existing common planar capacitor structure used in printed circuit boards. The common planar capacitor structure utilizes a single dielectric layer and embedded capacitors with different capacitances are achieved by adjusting the sizes of the embedded capacitors' conductive terminals. Since general applications usually ... 06/01/06 - 20060113630 - Vertically-stacked plate interdigital capacitor structure A vertically-stacked interdigital plate capacitor structure includes at least a first conductive plate, at least a second conductive plate parallel to the first conductive plate, and an inter-metal dielectric layer disposed between the first conductive plate and the second conductive plate. The first conductive plate includes a plurality of first ... 05/18/06 - 20060102983 - Semiconductor device having a stacked capacitor A stacked capacitor in a memory cell has a bottom electrode made of a metal or metal compound, a capacitor insulation film and a top electrode made of a metal or a metal compound. The capacitor insulation film includes an aluminum oxide film having a thickness of 2 to 4 ... 05/11/06 - 20060097347 - Novel slurry for chemical mechanical polishing of metals A slurry for removing metals, useful in the manufacture of integrated circuits generally, and for the chemical mechanical polishing of noble metals particularly, may be formed by combining periodic acid, an abrasive, and a buffer system, wherein the pH of the slurry is between about 4 to about 8. ... 05/04/06 - 20060091495 - Ceramic thin film on base metal electrode A method including forming a first metal material layer on a dielectric material; transitioning a portion of the first metal material adjacent to the dielectric to a first oxidation state and a portion of the metal material peripheral to the dielectric material to a second different oxidation state; and forming ... 05/04/06 - 20060091494 - High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element A dielectric thin film 8, comprising a first bismuth layer-structured compound layer 8a expressed by a composition formula of (Bi2O2)2+(Am−1 Bm O3m+1)2− or Bi2 Am−1 Bm O3m+3, wherein “m” is a positive number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and ... 04/27/06 - 20060087004 - Semiconductor device including metal-insulator-metal capacitor arrangement A semiconductor device has a semiconductor substrate, a multi-layered wiring construction formed over the semiconductor device, and a metal-insulator-metal (MIM) capacitor arrangement established in the multi-layered wiring construction. The MIM capacitor arrangement includes first, second, third, fourth, fifth, and sixth electrode structures, which are arranged in order in parallel with ... 04/27/06 - 20060087003 - Design and layout techniques for low parasitic capacitance in analog circuit applications A semiconductor device that reduces the parasitic capacitance between a conductive trace and a substrate, and a method of fabricating the same. The semiconductor device includes a substrate, an insulator layer disposed upon the substrate, a conductive trace disposed upon the insulator layer, and an element disposed between the substrate ... 04/20/06 - 20060081960 - Integrated capacitor on packaging substrate An integrated capacitor on a packaging substrate. The integrated capacitor comprises a conductor plane, a first dielectric layer and a signal transmission layer. The conductor plane has an extrusion layer of a first thickness. The first extrusion layer and the conductor plane are made of the same material. The first ... 04/06/06 - 20060071297 - Device with integrated capacitance structure Device with integrated capacitance structure The present invention relates to a device with integrated capacitance structure has at least one first and an adjacent second rewiring plane, each of which comprises at least one first partial structure and a second partial structure, which is different from the first partial structure, ... 03/30/06 - 20060065949 - Semiconductor device A semiconductor device equipped with an integrated circuit including a metal thin-film-resistor object is disclosed. The semiconductor device includes a lower layer side insulator film formed on a semiconductor substrate, a metal wiring pattern formed on the lower layer side insulator film, an underground insulator film having a silicon oxide-film ... 03/23/06 - 20060060940 - Rectifying charge storage element A power supply device consists of a rectifier and capacitor which share common elements facilitating the construction and application of the device to various types of substrates and, particularly, flexible substrates. Components of the device may be fabricated from organic conductors. ... 03/16/06 - 20060054995 - Metal-insulator-metal capacitor and method for manufacturing the same A capacitor has a lower electrode formed on an insulation layer, a dielectric layer formed on the lower electrode, an upper electrode layer formed on the dielectric layer, and a first protection layer pattern formed on the upper electrode layer. The upper electrode layer is etched using the first protection ... 03/16/06 - 20060054994 - Interdigitaded capacitors The specification describes matched capacitor pairs that employ interconnect metal in an interdigitated form, and are made with an area efficient configuration. In addition, structural variations between capacitors in the capacitor pair are minimized to provide optimum matching. According to the invention, the capacitor pairs are interdigitated in a manner ... 03/02/06 - 20060043527 - Capacitor The present invention relates to a capacitor having a configuration in which capacitors are coupled in series to each other. The capacitor formed on a substrate according to an exemplary embodiment of the present invention includes: a polysilicon layer doped with an impurity; a first insulation layer formed on the ... 02/16/06 - 20060033181 - Buried conductors Buried conductors within semiconductor devices and structures, and methods for forming such conductors, are disclosed. In one embodiment of the invention, a semiconductor structure includes a substrate and a plurality of conductive elements buried within the substrate. The conductive elements may be metal, such as tungsten or a tungsten alloy. ... 02/02/06 - 20060022304 - Dielectric structure Dielectric structures particularly suitable for use in capacitors having a layer of a dielectric material including a dopant that provides a positive topography are disclosed. Methods of forming such dielectric structures are also disclosed. Such dielectric structures show increased adhesion of subsequently applied conductive layers. ... 02/02/06 - 20060022303 - Circuitized substrate with internal organic memory device, method of making same, electrical assembly utilizing same, and information handling system utilizing same A circuitized substrate comprised of at least one dielectric material having an electrically conductive pattern thereon. At least part of the pattern is used as the first layer of an organic memory device which further includes at least a second dielectric layer over the pattern and a second pattern aligned ... 02/02/06 - 20060022302 - Integrated circuit arrangement comprising capacitors and preferably planar transistors, and production method An integrated circuit arrangement and method of fabricating the integrated circuit arrangement is described. The integrated circuit arrangement contains an insulating region and a sequence of regions which forms a capacitor. The sequence contains a near electrode region near the insulating region, a dielectric region, and a remote electrode region ... 01/26/06 - 20060017136 - Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same In a capacitor of an analog semiconductor device having a multi-layer dielectric film and a method of manufacturing the same, the multi-layer dielectric film can be readily manufactured, has weak reactivity with corresponding electrodes and offers excellent leakage current characteristics. In order to obtain these advantages, a lower dielectric film ... 01/26/06 - 20060017135 - Layout method of decoupling capacitors A layout method of decoupling capacitors while ensuring the decoupling capacitance necessary for each grid area. The method includes calculating the total power consumption of logic cells, arranging the decoupling capacitance throughout the subject area in correspondence with the total power consumption, dividing the subject area into a plurality of ... 01/12/06 - 20060006497 - Capacitors having doped aluminum oxide dielectrics Doped aluminum oxide layers having a porous aluminum oxide layer and methods of their fabrication. The porous aluminum oxide layer may be formed by evaporation physical vapor deposition techniques to facilitate formation of a high-purity aluminum oxide layer. A dopant material is embedded in the pores of the porous aluminum ... 01/12/06 - 20060006496 - Interdigitaded capacitors The specification describes matched capacitor pairs that employ interconnect metal in an interdigitated form, and are made with an area efficient configuration. In addition, structural variations between capacitors in the capacitor pair are minimized to provide optimum matching. According to the invention, the capacitor pairs are interdigitated in a manner ... 01/05/06 - 20060001125 - Semiconductor device and method of producing the same A semiconductor device includes a first transistor having a first gate oxide layer with a first thickness; a second transistor having a second gate oxide layer with a second thickness different from the first thickness; and at least one of a capacitor and a variable capacitance diode. One of the ... 12/29/05 - 20050285225 - Semiconductor constructions comprising cerium oxide and titanium oxide The invention includes semiconductor constructions comprising dielectric materials which contain cerium oxide and titanium oxide. The dielectric materials can contain a homogeneous distribution of cerium oxide and titanium oxide, and/or can contain a laminate of cerium oxide and titanium oxide. The dielectric materials can be incorporated into any suitable semiconductor ... 12/15/05 - 20050275062 - Semiconductor bare chip, method of recording id information thereon, and method of identifying the same An object is to provide a technique to facilitate an identification of a semiconductor bare chip. To achieve this object, the semiconductor bare chip includes a plurality of fuse elements f11 to f19 disposed, in a predetermined order, on a surface of a semiconductor substrate. ID information of the semiconductor ... 12/08/05 - 20050269670 - Semiconductor device and fabrication method thereof A semiconductor device and a fabrication method thereof in which the semiconductor device includes capacitors having a metal/insulator/metal (MIM) structure are disclosed. The method includes forming an interlayer insulating film on a structure of a semiconductor substrate that exposes lower wiring and a lower insulating film; selectively etching the interlayer ... 12/08/05 - 20050269669 - Capacitor constructions and methods of forming A capacitor construction includes a first electrode and a layer between the first electrode and a surface supporting the capacitor construction. The capacitor construction can exhibit a lower RC time constant compared to an otherwise identical capacitor construction lacking the layer. Alternatively, or additionally, the first electrode may contain Si ... 12/08/05 - 20050269668 - Method and structure for forming relatively dense conductive layers A region of high metal density may be placed in metal layers proximate to an area of low metal density below an inductor on an integrated circuit without violating manufacturing design rules for reducing manufacturing defects and without substantially impacting performance of the inductor. These results are achieved by including ... 12/01/05 - 20050263849 - Layout structure for providing stable power source to a main bridge chip substrate and a motherboard This invention relates to a layout structure for providing stable power supply to a four-layer motherboard and a main bridge chip substrate. In the invention, on the top signal layer and power path of the bottom solder layer for layout of the main bridge chip and on the power ring, ... 12/01/05 - 20050263848 - Metal-insulator-metal capacitor having a large capacitance and method of manufacturing the same A metal-insulator-metal (MIM) capacitor having a large capacitance, and a method of manufacturing the same, includes forming a lower electrode on a semiconductor substrate, sequentially forming a first dielectric film, an intermediary electrode, and a second dielectric film on an upper surface of the lower electrode, forming an inter-metal insulating ... 11/24/05 - 20050258511 - Ultra low inductance multi layer ceramic capacitor A multilayer capacitor having a low parasitic inductance includes a first electrode, a second electrode, a dielectric, a first contact, and a second contact. The first electrode is substantially rectangular and it includes a first contact finger. The dielectric has a first surface and a second surface, wherein the first ... 11/24/05 - 20050258510 - Method for fabricating dielectric mixed layers and capacitive element and use thereof The present invention provides a method for fabricating a capacitive element (100), a substrate (101) being provided as a first electrode layer of the capacitive element (100), the substrate (101) provided as an electrode layer is conditioned, a dielectric layer (102) is deposited on the conditioned substrate (101) and a ... 10/27/05 - 20050236690 - Decoupling capacitor design A thin-dielectric unit capacitor is disclosed having a first node coupled to a first circuit connection point and a second node coupled to a second circuit connection point. It further contains a first and second thin-dielectric capacitors connected in series between the first and second nodes, wherein a thickness of ... 10/20/05 - 20050230784 - Adhering layers to metals with dielectric adhesive layers The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors. ... 10/13/05 - 20050224914 - Semiconductor integrated circuit device, method of enerating pattern thereof, method of manufacturing the same, and pattern generating apparatus for the same The semiconductor integrated circuit device has at least one circuit block. The semiconductor integrated circuit device includes a bypass capacitor having a first conductor layer 1a formed on the circuit block and a second conductor layer 1b formed on the first conductor layer 1a with a capacitor insulating film 1c ... 10/13/05 - 20050224913 - Devices comprising aluminum oxide and metal oxide dielectric materials, capacitor constructions, and methods of forming capacitor constructions The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and ... 10/13/05 - 20050224912 - Circuit and method for enhanced low frequency switching noise suppression in multilayer printed circuit boards using a chip capacitor lattice A printed circuit board (PCB) uses arrays of chip capacitors over the entire surface of the PCB. The PCB includes an upper conductive surface routing signals to components of the PCB, a lower conductive surface, vias between the upper and lower surfaces, and a layer of patches disposed between the ... 09/22/05 - 20050205966 - High temperature embedded charge devices and methods thereof A device for storing embedded charge includes a first insulator and at least one second insulator. The first insulator has at least two outer surfaces and has a band gap of less than about 5.5 eV. The second insulator is deposited on at least each of the at least two ... 09/01/05 - 20050189615 - Non-continuous encapsulation layer for mim capacitor The present invention relates to metal-insulator-metal (MIM) capacitors and field effect transistors (FETs) formed on a semiconductor substrate. The FETs are formed in Front End of Line (FEOL) levels below the MIM capacitors which are formed in upper Back End of Line (BEOL) levels. An insulator layer is selectively formed ... 09/01/05 - 20050189614 - Configurable integrated circuit capacitor array using via mask layers A semiconductor device having a plurality of layers and a capacitor array that includes a plurality of individual capacitors. At least one of the plurality of layers in the semiconductor device may be a via layer configured to determine the connections and capacitances of the plurality of individual capacitors in ... 08/11/05 - 20050173778 - Analog capacitor and method of fabricating the same Analog capacitors, and methods of fabricating the same, include a lower electrode having a lower conductive layer, a capacitor dielectric layer on the lower conductive layer, and an upper electrode on the capacitor dielectric layer to be opposite to the lower electrode, wherein the upper electrode includes at least an ... 08/04/05 - 20050167782 - Semiconductor device having an aligned transistor and capacitive element A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a ... 08/04/05 - 20050167781 - Mos technology capacitor and integrated semiconductor circuit This invention relates to a Metal Oxide on Semiconductor technology capacitor and an integrated semiconductor circuit comprising a MOS technology capacitor or a Bipolar Complementary Metal Oxide on Semiconductor technology capacitor comprising said MOS technology capacitor. The integrated MOS technology capacitor is comprising at least one conducting gate layer 1, ... 07/21/05 - 20050156280 - Integrated circuit packages with sandwiched capacitors To provide high-speed, low inductance capacitive decoupling, an integrated circuit (IC) package includes capacitors positioned within the mounting region between a die and an IC package substrate. A variety of types and sizes of capacitors and substrates can be employed in a variety of geometrical arrangements. In some embodiments, capacitors ... 07/21/05 - 20050156279 - Capacitor and semiconductor device and method for fabricating the semiconductor device A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of ... 07/21/05 - 20050156278 - Metal-insulator-metal capacitor and method of fabrication A method and structure for a MIM capacitor, the structure including: an electronic device, comprising: an interlevel dielectric layer formed on a semiconductor substrate; a copper bottom electrode formed in the interlevel dielectric layer, a top surface of the bottom electrode co-planer with a top surface of the interlevel dielectric ... 07/21/05 - 20050156277 - Semiconductor device There is provided a semiconductor device, wherein a digital circuit region and an analog circuit region are located independently. A power supply wiring and a ground wiring are placed on the periphery of each circuit region and are connected to elements in each circuit region. A MOS capacitor is formed ... 07/07/05 - 20050145988 - Semiconductor device and method of fabricating the same A semiconductor device includes a semiconductor substrate, an insulative film formed above the semiconductor substrate, the film having a first groove and a second groove greater in width than the first groove, a wiring lead buried in the first groove of the insulative film to have a substantially flat surface, ... 07/07/05 - 20050145987 - Semiconductor device A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the ... 07/07/05 - 20050145986 - Semiconductor device and method of fabricating the same A semiconductor device according to an aspect of this invention comprises a first lower interconnection formed on an insulating film on a semiconductor substrate, a first via formed on the first lower interconnection, and an MIM capacitor formed on the first via, and including a lower electrode, capacitor insulating film, ... 07/07/05 - 20050145985 - Semiconductor device and method of manufacturing the same The present invention provides a method of manufacturing a semiconductor device that can inhibit deterioration of the ferroelectric film cased by hydrogen generated in a wiring layer. The method of manufacturing a semiconductor device includes steps of forming the ferroelectric capacitor by laminating first electrode 8, ferroelectric film 9, second ... 07/07/05 - 20050145984 - Horizontal chalcogenide element defined by a pad for use in solid-state memories A process for fabricating phase-change elements having ultra small cross-sectional areas for use in phase change memory cells specifically and in semiconductor devices generally in which pads are implemented to create horizontally aligned phase change elements is disclosed. The elements thus defined may be used within chalcogenide memory cells or ... 06/30/05 - 20050139956 - Semiconductor device and fabrication method thereof On a silicon substrate, a first insulation layer, a lower conductive layer, a capacitor-insulator layer, and an upper conductive layer are formed in that order. Then, a first resist pattern is formed, the upper conductive layer is etched to form an upper electrode, and the capacitor-insulator layer is successively etched ... 06/23/05 - 20050133885 - Capacitor and its manufacturing method, and semiconductor device A capacitor is provided having a structure in which an insulation film is interposed between a first electrode and a second electrode. The insulation film includes (Ba1−x Mx) TiO3 (M=Sr or Ca, 0≦x≦0.3) as a main component, and at least one of Si and Ge added thereto. ... 06/09/05 - 20050121745 - Method of improving the top plate electrode stress inducting voids for 1t-ram process A method for fabricating a capacitor with overlying transistor without stress-induced voids is described. A capacitor stack is provided overlying a substrate. A stress-balancing dielectric layer is deposited overlying the stack. An anti-reflective coating (ARC) layer is deposited overlying the stress-balancing layer. The stack is patterned to form the capacitors. ... 06/09/05 - 20050121744 - High density mim capacitor structure and fabrication process A stacked integrated circuit (IC) MIM capacitor structure and method for forming the same the MIM capacitor structure including a first MIM capacitor structure formed in a first IMD layer comprising an first upper and first lower electrode portions; at least a second MIM capacitor structure arranged in stacked relationship ... 06/02/05 - 20050116318 - Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing same According to some embodiments, a capacitor includes a storage conductive pattern, a storage electrode having a complementary member enclosing a storage conductive pattern so as to complement an etch loss of the storage electrode, a dielectric layer disposed on the storage electrode, and a plate electrode disposed on the dielectric ... ### FreshPatents.com Support - Terms & Conditions |