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Including Capacitor Component

Including Capacitor Component patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Integrated Circuit Structure With Electrically Isolated Components > Passive Components In Ics > Including Capacitor Component



Method and system for a metal finger capacitor with a triplet repeating sequence incorporating a metal underpass
02/26/15 - 20150054126 - Methods and systems for a metal finger capacitor with a triplet repeating sequence incorporating a metal underpass may comprise repeating triplet capacitors integrated on a semiconductor die. The capacitors may comprise a first set of interconnected metal fingers comprising a first terminal of a first capacitor, a second set of...

Multi-material structures, semiconductor constructions and methods of forming capacitors
02/26/15 - 20150054127 - Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of...

Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
02/26/15 - 20150054128 - The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode...

Semiconductor device with pads of enhanced moisture blocking ability
02/26/15 - 20150054129 - A semiconductor device is provided having a pad with an improved moisture blocking ability. The semiconductor device has: a circuit portion including a plurality of semiconductor elements formed on a semiconductor substrate; lamination of insulator covering the circuit portion, including a passivation film as an uppermost layer having openings; ferro-electric...

Semiconductor capacitor
02/19/15 - 20150048482 - A semiconductor capacitor is includes a substrate, a plurality of odd layers formed on the substrate, and a plurality of even layers formed on the substrate. Each odd layer includes a plurality of first odd fingers and a first odd terminal electrically connected thereto, and a plurality of second odd...

Semiconductor structures and methods of forming the same
02/19/15 - 20150048483 - A metal insulator metal (MIM) capacitor includes a base layer and a copper bulk layer in the base layer. The MIM capacitor further includes an etch stop layer over the base layer and the copper bulk layer and an oxide-based dielectric layer over the etch stop layer. The MIM capacitor...

Multi-die fine grain integrated voltage regulation
02/12/15 - 20150041955 - A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device may include one or more current consuming elements. A passive device may be coupled to the power consuming device. The passive device may include a plurality of passive elements...

Method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof
02/05/15 - 20150035117 - Aspects of the present invention relate to method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof. Various embodiments include a method for reducing lateral extrusion formed in semiconductor structures. The method can include removing a portion of a first lateral extrusion in an aluminum layer...

Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
02/05/15 - 20150035118 - The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode...

Nanoparticles for making supercapacitor and diode structures
01/29/15 - 20150028449 - Structures and methods of making a supercapacitor may include a first electrode comprising a first conductive plate and a 3-dimensional (3D) aggregate of sintered nanoparticles electrically connected one to another and to the first conductive plate. The supercapacitor may also include a dielectric formed on surfaces of the 3D aggregate...

Integrated circuit device including through-silicon via structure and decoupling capacitor and method of manufacturing the same
01/29/15 - 20150028450 - An integrated circuit device is provided which includes a through-silicon via (TSV) structure and one or more decoupling capacitors, along with a method of manufacturing the same. The integrated circuit device may include a semiconductor structure including a semiconductor substrate, a TSV structure passing through the semiconductor substrate, and a...

Semiconductor device and method of designing the same
01/29/15 - 20150028451 - A semiconductor device includes: a semiconductor substrate having a memory cell array region and a peripheral circuit region; a ferroelectric capacitor formed over the semiconductor substrate in the memory cell array region; and a dummy capacitor formed over the semiconductor substrate in the peripheral circuit region, with a layered structure...

Complementary back end of line (beol) capacitor
01/29/15 - 20150028452 - A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes a lower interconnect layer of...

Metal-insulator-metal (mim) capacitor with deep trench (dt) structure and method in a silicon-on-insulator (soi)
01/22/15 - 20150021737 - A structure forming a metal-insulator-metal (MIM) trench capacitor is disclosed. The structure comprises a multi-layer substrate having a metal layer and at least one dielectric layer. A trench is etched into the substrate, passing through the metal layer. The trench is lined with a metal material that is in contact...

Thick conductive stack plating process with fine critical dimension feature size for compact passive on glass technology
01/15/15 - 20150014812 - An integrated circuit device includes a substrate, and a first interlayer dielectric layer on the substrate that includes a first conductive layer and a second conductive layer. The integrated circuit device also includes a first conductive stack including a third conductive layer coupled to a portion of the second conductive...

Complex circuit element and capacitor utilizing cmos compatible antiferroelectric high-k materials
01/15/15 - 20150014813 - The present disclosure provides integrated circuit elements and MIM/MIS capacitors having high capacitance and methods of forming according integrated circuit elements and integrated MIM/MIS capacitors and methods of controlling an integrated circuit element and an integrated MIM/MIS capacitor. In various aspects, a substrate is provided and a dielectric layer or...

Metal trench capacitor and improved isolation and methods of manufacture
01/15/15 - 20150014814 - A high-k dielectric metal trench capacitor and improved isolation and methods of manufacturing the same is provided. The method includes forming at least one deep trench in a substrate, and filling the deep trench with sacrificial fill material and a poly material. The method further includes continuing with CMOS processes,...

High dielectric constant transition metal oxide materials
01/01/15 - 20150001673 - A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium...

Capacitors having dielectric regions that include multiple metal oxide-comprising materials
01/01/15 - 20150001674 - Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various...

Method for including decoupling capacitors into semiconductor circuit having logic circuit therein and semiconductor circuit thereof
01/01/15 - 20150001675 - A semiconductor circuit comprises a first and a second logic circuit, a first and a second decoupling capacitor. The first decoupling capacitor is arranged in a first area around the first logic circuit and the second decoupling capacitor is arranged in a second area around the second logic circuit. Wherein,...

Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
01/01/15 - 20150001676 - MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes....

Integrated circuits with on-die decoupling capacitors
12/25/14 - 20140374877 - An integrated circuit includes a decoupling capacitor and an internal circuit. The decoupling capacitor is coupled to a first external terminal of the integrated circuit. The internal circuit in the integrated circuit is coupled to a second external terminal of the integrated circuit. The decoupling capacitor is coupled to provide...

Memory cell with integrated iii-v device
12/25/14 - 20140374878 - A method including forming an oxide layer on a top of a substrate; forming a deep trench capacitor in the substrate; bonding a III-V compound semiconductor to a top surface of the oxide layer; and forming a III-V device in the III-V compound semiconductor....

Integrated circuit with backside structures to reduce substrate wrap
12/25/14 - 20140374879 - Wafer bowing induced by deep trench capacitors is ameliorated by structures formed on the reverse side of the wafer. The structures on the reverse side include tensile films. The films can be formed within trenches on the back side of the wafer, which enhances their effect. In some embodiments, the...

Deep trench capacitor
12/25/14 - 20140374880 - The present disclosure relates to a method of forming a capacitor structure, including depositing a plurality of first polysilicon (POLY) layers of uniform thickness separated by a plurality of oxide/nitride/oxide (ONO) layers over a bottom and sidewalls of a recess and substrate surface. A second POLY layer is deposited over...

Concentric capacitor structure
12/25/14 - 20140374881 - A concentric capacitor structure generally comprising concentric capacitors is disclosed. Each concentric capacitor comprises a first plurality of perimeter plates formed on a first layer of a substrate and a second plurality of perimeter plates formed on a second layer of the substrate. The first plurality of perimeter plates extend...

Metal capacitor with inner first terminal and outer second terminal
12/18/14 - 20140367827 - A metal capacitor with an inner first terminal (e.g., a positive terminal) and an outer second terminal (e.g., a negative terminal) is disclosed herein. In an exemplary design, an apparatus (e.g., an IC chip) includes a first conductive line for a first terminal of a capacitor and at least one...

Process for producing a through-silicon via and a through-silicon capacitor in a substrate, and corresponding device
12/18/14 - 20140367828 - A device includes a substrate and an integrated-circuit interconnect on a first side. A capacitor passes through the substrate possessing a first electrode having a first contact face electrically coupled to a first electrically conductive zone placed on a second side of the substrate and a second electrode electrically coupled...

Semiconductor devices including capacitors
12/11/14 - 20140361403 - A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second...

Capacitor structure
12/11/14 - 20140361404 - One or more embodiments relate to a semiconductor device, comprising: A semiconductor device, comprising: a semiconductor substrate; a plurality of first conductive vias, the first conductive vias electrically coupled together, each of the first conductive vias passing through the substrate; and a plurality of second conductive vias, the second conductive...

Hybrid semiconductor package
11/27/14 - 20140346637 - A semiconductor package includes a substrate, an RF semiconductor die attached to a first side of the substrate, a capacitor attached to the first side of the substrate, and a first terminal on the first side of the substrate. The semiconductor package further includes copper or aluminum bonding wires or...

Composite reconstituted wafer structures
11/13/14 - 20140332926 - A reconstituted electronic device comprising at least one die and at least one passive component. A functional material is incorporated in the substrate of the device to modify the electrical behaviour of the passive component. The passive component may be formed in redistribution layers of the device. Composite functional materials...

Integrated switchable capacitive device
10/30/14 - 20140319653 - An integrated circuit includes a substrate. A fixed main capacitor electrode is disposed in a metal layer overlying the substrate. A second main capacitor electrode is disposed in a metal layer and spaced from the fixed main capacitor electrode. A movable capacitor electrode is disposed adjacent the fixed main capacitor...

Stacked capacitor structure and a fabricating method for fabricating the same
10/23/14 - 20140312460 - A stacked capacitor structure of the instant disclosure comprises a substrate and a plurality of stacked capacitors. The substrate has an insulating layer formed thereon and a plurality of contact plugs in the insulating layer, wherein the contact plugs are exposed on the upper surface of the insulating layer. Specially,...

Semiconductor device and method for manufacturing the same
10/09/14 - 20140299965 - After the formation of a first interlayer insulating, an etching stopper film made of SiON is formed thereon. Subsequently, a contact hole extending from the upper surface of the etching stopper film and reaching a high concentration impurity region is formed, and a first plug is formed by filling W...

Hermetic packaging of integrated circuit components
10/09/14 - 20140299966 - A method for forming an integrated circuit includes transforming at least a portion of a first substrate layer to form a conductive region within the first substrate layer. An integrated circuit device is provided proximate an outer surface of the first substrate layer. The integrated circuit device transmits or receives...

Semiconductor structures with metal lines
10/02/14 - 20140291802 - Disclosed are semiconductor structures with metal lines and methods of manufacture which reduce or eliminate extrusion formation. The method includes forming a metal wiring comprising a layered structure of metal materials with an upper constraining layer. The method further includes forming a film on the metal wiring which prevents metal...

Capacitor structure of gate driver in panel
10/02/14 - 20140291803 - A capacitor structure of gate driver in panel (GIP) includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a first and second transparent capacitor electrode layers. The first dielectric layer covers the first metal layer. The second metal layer is disposed on...

Semiconductor devices having balancing capacitor and methods of forming the same
10/02/14 - 20140291804 - A semiconductor memory device includes a substrate including cell block, a balancing block, and a sense block. A plurality of cell bit lines are formed in the cell block of. A plurality of cell plugs are formed adjacent to side surfaces of the bit lines. Cell inner spacers, air spacers,...

Semiconductor device containing mim capacitor and fabrication method
10/02/14 - 20140291805 - A semiconductor device containing an MIM capacitor and its fabrication method are provided. A metal-insulator-metal (MIM) capacitor is formed on a first interlayer dielectric layer covering a substrate. The MIM capacitor includes a bottom electrode layer and a top electrode layer that are isolated from and laterally staggered with one...

Capacitor arrays for minimizing gradient effects and methods of forming the same
10/02/14 - 20140291806 - Semiconductor devices having capacitor arrays. A semiconductor device is formed including a capacitor array formed in a plurality of cells in a two-dimensional grid. The capacitor array includes a plurality of operational capacitors formed in a first subset of the plurality of cells along a diagonal of the capacitor array....

Semiconductor package having heat slug and passive device
09/25/14 - 20140284764 - Provided is a semiconductor package including a substrate, a semiconductor chip and a passive device disposed on the substrate, and a heat slug configured to cover the semiconductor chip and the passive device. The substrate and a first electrode of the passive device are electrically connected to each other, and...

Electric power conversion apparatus
09/25/14 - 20140284765 - An electric power conversion apparatus includes a stacked body, a capacitor, a metal frame and a case. The stacked body is formed by stacking semiconductor modules with coolant passages formed therebetween. The frame has both the stacked body and the capacitor fixed therein. The case has all of the stacked...

Ferroelectric capacitor
09/25/14 - 20140284766 - A ferroelectric capacitor includes a ferroelectric film, a lower electrode in contact with one surface of the ferroelectric film, and an upper electrode in contact with the other surface of the ferroelectric film. At least one of the upper electrode and the lower electrode has a stacked electrode structure in...

Methods of forming under device interconnect structures
09/18/14 - 20140264739 - Methods of forming microelectronic interconnect under device structures are described. Those methods and structures may include forming a device layer in a first substrate, forming at least one routing layer in a second substrate, and then coupling the first substrate with the second substrate, wherein the first substrate is bonded...

Semiconductor device
09/18/14 - 20140264740 - respective regions of the second and third conductive layers form a second capacitor....

Capacitor using barrier layer metallurgy
09/18/14 - 20140264741 - A metal-insulator-metal (MIM) capacitor using barrier layer metallurgy and methods of manufacture are disclosed. The method includes forming a bottom plate of a metal-insulator-metal (MIM) capacitor and a bonding pad using a single masking process. The method further includes forming a MIM dielectric on the bottom plate. The method further...

Integrated capacitor
09/18/14 - 20140264742 - A structure includes first, second, and third conductive leaf structures. The first conductive leaf structure includes a first conductive midrib and conductive veins. The second conductive leaf structure is electrically connected to the first conductive leaf structure, and includes a second conductive midrib, conductive veins extending toward the first conductive...

Novel structure of metal gate mim
09/18/14 - 20140264743 - First and second multi-layer structures are formed within respective openings in at least one dielectric layer formed over a semiconductor substrate. The first multi-layer structure comprises a gate electrode, and the second multi-layer structure comprises a resistor and a first electrode of a metal-insulator-metal (MIM) capacitor structure. The MIM capacitor...

Stacked semiconductor device and method of forming the same
09/18/14 - 20140264744 - A stacked semiconductor device includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth...

Transmission line formed adjacent seal ring
09/18/14 - 20140264745 - An integrated circuit device includes a semiconductor body, active components formed over the semiconductor body, one or more seal rings surrounding the active components, and a signal line. One or more of the seal rings are configured to provide the primary return path for current flowing through the signal line....

Self aligned capacitor fabrication
09/18/14 - 20140264746 - A capacitor and method for fabricating the same. In one configuration, the capacitor has a silicon substrate, a first and a second silicon dioxide layer over the silicon substrate, and silicon nitride fins between the silicon dioxide layers. The capacitor further includes a dielectric layer over the silicon nitride fins...

Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
09/18/14 - 20140264747 - A dielectric layer can achieve a crystallography orientation similar to a base dielectric layer with a conductive layer disposed between the two dielectric layers. By providing a conductive layer having similar crystal structure and lattice parameters with the base dielectric layer, the crystallography orientation can be carried from the base...

Manufacturing method of semiconductor device and semiconductor device
09/18/14 - 20140264748 - A step of forming a stacked film serving as a lower electrode, a step of forming an insulating film serving as a capacitive film on the stacked film, and a step of patterning the insulating film and the stacked film are performed. In the step of forming the stacked film,...

Semiconductor device
09/18/14 - 20140264749 - A semiconductor device includes a first insulating layer, a contact plug formed in the first insulating layer, a first etch stop layer over the first insulating layer, a second etch stop layer over the first etch stop layer, a second insulating layer over the second etch stop layer and having...

Metal-oxide-metal (mom) capacitor with enhanced capacitance
09/11/14 - 20140252543 - A particular metal-oxide-metal (MOM) capacitor device includes a conductive gate material coupled to a substrate. The MOM capacitor device further includes a first metal structure coupled to the conductive gate material. The MOM capacitor device further includes a second metal structure coupled to the substrate and proximate to the first...

Dc/ ac dual function power delivery network (pdn) decoupling capacitor
09/11/14 - 20140252544 - Some implementations provide a semiconductor device that includes a first substrate, a die coupled to the first substrate, and a set of solder balls coupled to the first substrate. The set of solder balls is configured to provide an electrical connection between the die and a second substrate. The semiconductor...

Contact structure and semiconductor memory device using the same
09/11/14 - 20140252545 - A semiconductor memory device includes a substrate having thereon a memory array region and a periphery circuit region. A first dielectric layer covers the memory array region and the periphery circuit region on the substrate. A second dielectric layer covers the memory array region and the periphery circuit region on...

Switched capacitor structure
09/11/14 - 20140252546 - A capacitor structure comprising semiconductor substrate and a matrix of capacitor units formed over the semiconductor substrate each capacitor unit. The matrix includes an interior structure comprised of one or more vertical plates, each vertical plate of the interior structure formed from a plurality of conductive portions connected vertically to...

Semiconductor device having integrated passive device and process for manufacturing the same
09/11/14 - 20140252547 - The present invention relates to a semiconductor device and a process for fabricating the same. In one embodiment, the semiconductor device includes a substrate and a plurality of integrated passive devices. The integrated passive devices are disposed on the substrate and include at least two capacitors which have different capacitance...

Filter and capacitor using redistribution layer and micro bump layer
09/11/14 - 20140252548 - An integrated circuit package includes a die. An electrically conductive layer comprises a redistribution layer (RDL) in the die, or a micro-bump layer above the die, or both. The micro bump layer comprises at least one micro-bump line. A filter comprises the electrically conductive layer. A capacitor comprises an electrode...

Metal-insulator-metal capacitor
09/11/14 - 20140252549 - An embodiment metal-insulator-metal (MiM) capacitor includes a gate stack disposed upon an insulation layer, the gate stack including a gate metal, the gate metal serving as a bottom electrode, a dielectric layer disposed upon the gate stack, and a top metal layer disposed upon the dielectric layer, the top metal...

Stack capacitor structure and manufacturing method thereof
09/11/14 - 20140252550 - The present invention provides a stack capacitor structure and a manufacturing method thereof, adapted for a random access memory. The stack capacitor structure is formed on a semiconductor substrate. The stack capacitor structure includes an oxide layer and a circular-shaped stopping layer. The oxide layer is disposed on the semiconductor...

Method and apparatus for constructing an isolation capacitor in an integrated circuit
09/11/14 - 20140252551 - At least one high voltage rated isolation capacitor is formed on a face of a primary integrated circuit die. The isolation capacitor AC couples the primary integrated circuit in a first voltage domain to a second integrated circuit in a second voltage domain. The isolation capacitor DC isolates the primary...

Metal-oxide-metal capacitor
09/04/14 - 20140246754 - Provided is a capacitor of a semiconductor device. The capacitor can includes a plurality of parallel lower conductive lines in parallel and a plurality of upper conductive lines on the lower conductive lines. Each lower conductive line can have a line width that is different than that of the upper...

Buried tsv's used for decaps
08/28/14 - 20140239444 - An interposer having decaps formed in blind-vias, a packaged semiconductor structure having decaps formed in blind-vias, and methods for forming the same are provided. In one embodiment, an interposer is provided that includes an interconnect layer disposed on a substrate. A plurality of through-vias are formed through the substrate in...

Semiconductor device and method of manufacturing the same
08/28/14 - 20140239445 - A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact...

Fractal structures for fixed mems capacitors
08/28/14 - 20140239446 - An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within...

Complementary back end of line (beol) capacitor
08/21/14 - 20140231957 - A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes at least one lower interconnect...

Capacitors having dielectric layers with different band gaps and semiconductor devices using the same
08/21/14 - 20140231958 - A capacitor of a memory device includes dielectric layers with different energy band gaps. The capacitor may include, for example, a first electrode and a first dielectric layer on the first electrode. The capacitor may further include a second dielectric layer on the first dielectric layer. The first and second...

Semiconductor device having storage electrode and manufacturing method thereof
08/21/14 - 20140231959 - A semiconductor device includes a first storage electrode, a second storage electrode that is arranged above the first storage electrode, a first landing pad that is arranged between a top surface of the first storage electrode and a bottom surface of the second storage electrode, the first landing pad connecting...