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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Integrated Circuit Structure With Electrically Isolated Components > Passive Components In Ics > Including Capacitor Component

Including Capacitor Component

Including Capacitor Component patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

11/13/14 - 20140332926 - Composite reconstituted wafer structures
A reconstituted electronic device comprising at least one die and at least one passive component. A functional material is incorporated in the substrate of the device to modify the electrical behaviour of the passive component. The passive component may be formed in redistribution layers of the device. Composite functional materials...

10/30/14 - 20140319653 - Integrated switchable capacitive device
An integrated circuit includes a substrate. A fixed main capacitor electrode is disposed in a metal layer overlying the substrate. A second main capacitor electrode is disposed in a metal layer and spaced from the fixed main capacitor electrode. A movable capacitor electrode is disposed adjacent the fixed main capacitor...

10/23/14 - 20140312460 - Stacked capacitor structure and a fabricating method for fabricating the same
A stacked capacitor structure of the instant disclosure comprises a substrate and a plurality of stacked capacitors. The substrate has an insulating layer formed thereon and a plurality of contact plugs in the insulating layer, wherein the contact plugs are exposed on the upper surface of the insulating layer. Specially,...

10/09/14 - 20140299965 - Semiconductor device and method for manufacturing the same
After the formation of a first interlayer insulating, an etching stopper film made of SiON is formed thereon. Subsequently, a contact hole extending from the upper surface of the etching stopper film and reaching a high concentration impurity region is formed, and a first plug is formed by filling W...

10/09/14 - 20140299966 - Hermetic packaging of integrated circuit components
A method for forming an integrated circuit includes transforming at least a portion of a first substrate layer to form a conductive region within the first substrate layer. An integrated circuit device is provided proximate an outer surface of the first substrate layer. The integrated circuit device transmits or receives...

10/02/14 - 20140291802 - Semiconductor structures with metal lines
Disclosed are semiconductor structures with metal lines and methods of manufacture which reduce or eliminate extrusion formation. The method includes forming a metal wiring comprising a layered structure of metal materials with an upper constraining layer. The method further includes forming a film on the metal wiring which prevents metal...

10/02/14 - 20140291803 - Capacitor structure of gate driver in panel
A capacitor structure of gate driver in panel (GIP) includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a first and second transparent capacitor electrode layers. The first dielectric layer covers the first metal layer. The second metal layer is disposed on...

10/02/14 - 20140291804 - Semiconductor devices having balancing capacitor and methods of forming the same
A semiconductor memory device includes a substrate including cell block, a balancing block, and a sense block. A plurality of cell bit lines are formed in the cell block of. A plurality of cell plugs are formed adjacent to side surfaces of the bit lines. Cell inner spacers, air spacers,...

10/02/14 - 20140291805 - Semiconductor device containing mim capacitor and fabrication method
A semiconductor device containing an MIM capacitor and its fabrication method are provided. A metal-insulator-metal (MIM) capacitor is formed on a first interlayer dielectric layer covering a substrate. The MIM capacitor includes a bottom electrode layer and a top electrode layer that are isolated from and laterally staggered with one...

10/02/14 - 20140291806 - Capacitor arrays for minimizing gradient effects and methods of forming the same
Semiconductor devices having capacitor arrays. A semiconductor device is formed including a capacitor array formed in a plurality of cells in a two-dimensional grid. The capacitor array includes a plurality of operational capacitors formed in a first subset of the plurality of cells along a diagonal of the capacitor array....

09/25/14 - 20140284764 - Semiconductor package having heat slug and passive device
Provided is a semiconductor package including a substrate, a semiconductor chip and a passive device disposed on the substrate, and a heat slug configured to cover the semiconductor chip and the passive device. The substrate and a first electrode of the passive device are electrically connected to each other, and...

09/25/14 - 20140284765 - Electric power conversion apparatus
An electric power conversion apparatus includes a stacked body, a capacitor, a metal frame and a case. The stacked body is formed by stacking semiconductor modules with coolant passages formed therebetween. The frame has both the stacked body and the capacitor fixed therein. The case has all of the stacked...

09/25/14 - 20140284766 - Ferroelectric capacitor
A ferroelectric capacitor includes a ferroelectric film, a lower electrode in contact with one surface of the ferroelectric film, and an upper electrode in contact with the other surface of the ferroelectric film. At least one of the upper electrode and the lower electrode has a stacked electrode structure in...

09/18/14 - 20140264739 - Methods of forming under device interconnect structures
Methods of forming microelectronic interconnect under device structures are described. Those methods and structures may include forming a device layer in a first substrate, forming at least one routing layer in a second substrate, and then coupling the first substrate with the second substrate, wherein the first substrate is bonded...

09/18/14 - 20140264740 - Semiconductor device
respective regions of the second and third conductive layers form a second capacitor....

09/18/14 - 20140264741 - Capacitor using barrier layer metallurgy
A metal-insulator-metal (MIM) capacitor using barrier layer metallurgy and methods of manufacture are disclosed. The method includes forming a bottom plate of a metal-insulator-metal (MIM) capacitor and a bonding pad using a single masking process. The method further includes forming a MIM dielectric on the bottom plate. The method further...

09/18/14 - 20140264742 - Integrated capacitor
A structure includes first, second, and third conductive leaf structures. The first conductive leaf structure includes a first conductive midrib and conductive veins. The second conductive leaf structure is electrically connected to the first conductive leaf structure, and includes a second conductive midrib, conductive veins extending toward the first conductive...

09/18/14 - 20140264743 - Novel structure of metal gate mim
First and second multi-layer structures are formed within respective openings in at least one dielectric layer formed over a semiconductor substrate. The first multi-layer structure comprises a gate electrode, and the second multi-layer structure comprises a resistor and a first electrode of a metal-insulator-metal (MIM) capacitor structure. The MIM capacitor...

09/18/14 - 20140264744 - Stacked semiconductor device and method of forming the same
A stacked semiconductor device includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth...

09/18/14 - 20140264745 - Transmission line formed adjacent seal ring
An integrated circuit device includes a semiconductor body, active components formed over the semiconductor body, one or more seal rings surrounding the active components, and a signal line. One or more of the seal rings are configured to provide the primary return path for current flowing through the signal line....

09/18/14 - 20140264746 - Self aligned capacitor fabrication
A capacitor and method for fabricating the same. In one configuration, the capacitor has a silicon substrate, a first and a second silicon dioxide layer over the silicon substrate, and silicon nitride fins between the silicon dioxide layers. The capacitor further includes a dielectric layer over the silicon nitride fins...

09/18/14 - 20140264747 - Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
A dielectric layer can achieve a crystallography orientation similar to a base dielectric layer with a conductive layer disposed between the two dielectric layers. By providing a conductive layer having similar crystal structure and lattice parameters with the base dielectric layer, the crystallography orientation can be carried from the base...

09/18/14 - 20140264748 - Manufacturing method of semiconductor device and semiconductor device
A step of forming a stacked film serving as a lower electrode, a step of forming an insulating film serving as a capacitive film on the stacked film, and a step of patterning the insulating film and the stacked film are performed. In the step of forming the stacked film,...

09/18/14 - 20140264749 - Semiconductor device
A semiconductor device includes a first insulating layer, a contact plug formed in the first insulating layer, a first etch stop layer over the first insulating layer, a second etch stop layer over the first etch stop layer, a second insulating layer over the second etch stop layer and having...

09/11/14 - 20140252543 - Metal-oxide-metal (mom) capacitor with enhanced capacitance
A particular metal-oxide-metal (MOM) capacitor device includes a conductive gate material coupled to a substrate. The MOM capacitor device further includes a first metal structure coupled to the conductive gate material. The MOM capacitor device further includes a second metal structure coupled to the substrate and proximate to the first...

09/11/14 - 20140252544 - Dc/ ac dual function power delivery network (pdn) decoupling capacitor
Some implementations provide a semiconductor device that includes a first substrate, a die coupled to the first substrate, and a set of solder balls coupled to the first substrate. The set of solder balls is configured to provide an electrical connection between the die and a second substrate. The semiconductor...

09/11/14 - 20140252545 - Contact structure and semiconductor memory device using the same
A semiconductor memory device includes a substrate having thereon a memory array region and a periphery circuit region. A first dielectric layer covers the memory array region and the periphery circuit region on the substrate. A second dielectric layer covers the memory array region and the periphery circuit region on...

09/11/14 - 20140252546 - Switched capacitor structure
A capacitor structure comprising semiconductor substrate and a matrix of capacitor units formed over the semiconductor substrate each capacitor unit. The matrix includes an interior structure comprised of one or more vertical plates, each vertical plate of the interior structure formed from a plurality of conductive portions connected vertically to...

09/11/14 - 20140252547 - Semiconductor device having integrated passive device and process for manufacturing the same
The present invention relates to a semiconductor device and a process for fabricating the same. In one embodiment, the semiconductor device includes a substrate and a plurality of integrated passive devices. The integrated passive devices are disposed on the substrate and include at least two capacitors which have different capacitance...

09/11/14 - 20140252548 - Filter and capacitor using redistribution layer and micro bump layer
An integrated circuit package includes a die. An electrically conductive layer comprises a redistribution layer (RDL) in the die, or a micro-bump layer above the die, or both. The micro bump layer comprises at least one micro-bump line. A filter comprises the electrically conductive layer. A capacitor comprises an electrode...

09/11/14 - 20140252549 - Metal-insulator-metal capacitor
An embodiment metal-insulator-metal (MiM) capacitor includes a gate stack disposed upon an insulation layer, the gate stack including a gate metal, the gate metal serving as a bottom electrode, a dielectric layer disposed upon the gate stack, and a top metal layer disposed upon the dielectric layer, the top metal...

09/11/14 - 20140252550 - Stack capacitor structure and manufacturing method thereof
The present invention provides a stack capacitor structure and a manufacturing method thereof, adapted for a random access memory. The stack capacitor structure is formed on a semiconductor substrate. The stack capacitor structure includes an oxide layer and a circular-shaped stopping layer. The oxide layer is disposed on the semiconductor...

09/11/14 - 20140252551 - Method and apparatus for constructing an isolation capacitor in an integrated circuit
At least one high voltage rated isolation capacitor is formed on a face of a primary integrated circuit die. The isolation capacitor AC couples the primary integrated circuit in a first voltage domain to a second integrated circuit in a second voltage domain. The isolation capacitor DC isolates the primary...

09/04/14 - 20140246754 - Metal-oxide-metal capacitor
Provided is a capacitor of a semiconductor device. The capacitor can includes a plurality of parallel lower conductive lines in parallel and a plurality of upper conductive lines on the lower conductive lines. Each lower conductive line can have a line width that is different than that of the upper...

08/28/14 - 20140239444 - Buried tsv's used for decaps
An interposer having decaps formed in blind-vias, a packaged semiconductor structure having decaps formed in blind-vias, and methods for forming the same are provided. In one embodiment, an interposer is provided that includes an interconnect layer disposed on a substrate. A plurality of through-vias are formed through the substrate in...

08/28/14 - 20140239445 - Semiconductor device and method of manufacturing the same
A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact...

08/28/14 - 20140239446 - Fractal structures for fixed mems capacitors
An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within...

08/21/14 - 20140231957 - Complementary back end of line (beol) capacitor
A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes at least one lower interconnect...

08/21/14 - 20140231958 - Capacitors having dielectric layers with different band gaps and semiconductor devices using the same
A capacitor of a memory device includes dielectric layers with different energy band gaps. The capacitor may include, for example, a first electrode and a first dielectric layer on the first electrode. The capacitor may further include a second dielectric layer on the first dielectric layer. The first and second...

08/21/14 - 20140231959 - Semiconductor device having storage electrode and manufacturing method thereof
A semiconductor device includes a first storage electrode, a second storage electrode that is arranged above the first storage electrode, a first landing pad that is arranged between a top surface of the first storage electrode and a bottom surface of the second storage electrode, the first landing pad connecting...

08/14/14 - 20140225222 - Package with metal-insulator-metal capacitor and method of manufacturing the same
A package includes a chip that has a metal-insulator-metal (MIM) capacitor formed in a first polymer layer and a metallic pillar formed on the MIM capacitor. A molding compound surrounds the chip, a second polymer layer is formed on the chip and the molding compound, a third polymer layer is...

08/14/14 - 20140225223 - Metal-insulator-metal capacitor over conductive layer
A method of fabricating a metal-insulator-metal (MIM) capacitor reduces the number of masks and processing steps compared to conventional techniques. A conductive redistribution layer (RDL) is patterned on a semiconductor chip. A MIM dielectric layer is deposited over the RDL. A first conductive layer of a MIM capacitor is deposited...

08/14/14 - 20140225224 - Metal-insulator-metal capacitor under redistribution layer
A metal-insulator-metal (MIM) capacitor reduces a number of masks and processing steps compared to conventional techniques. A first conductive layer of a MIM capacitor is deposited on a semiconductor chip and patterned using a MIM conductive layer mask. A conductive redistribution layer (RDL) is patterned over the MIM dielectric layer....

08/14/14 - 20140225225 - Capacitor structures for including high capacitance per unit area
A capacitor structure comprises a substrate extending in a horizontal direction of extension. A first gate insulating film is on the substrate and a first gate pattern is on the first gate insulating film. A first finger-shaped electrode is on the first gate pattern, and a second finger-shaped electrode is...

08/14/14 - 20140225226 - Multi-step deposition of ferroelectric dielectric material
Multi-step deposition of lead-zirconium-titanate (PZT) ferroelectric material. An initial portion of the PZT material is deposited by metalorganic chemical vapor deposition (MOCVD) at a low deposition rate, for example at a temperature below about 640 deg C. from vaporized liquid precursors of lead, zirconium, and titanium, and a solvent at...

08/14/14 - 20140225227 - Protecting element having first and second high concentration impurity regions separated by insulating region and method
With a microwave FET, an incorporated Schottky junction capacitance or PN junction capacitance is small and such a junction is weak against static electricity. However, with a microwave device, the method of connecting a protecting diode cannot be used since this method increases the parasitic capacitance and causes degradation of...

08/07/14 - 20140217548 - Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes a substrate, a metal film on a portion of the substrate, a first dielectric film having a first portion on the metal film and a second portion on the substrate, the second portion being integral with the first portion, a lower electrode on the first portion,...

08/07/14 - 20140217549 - Decoupling mim capacitor designs for interposers and methods of manufacture thereof
Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device....

07/31/14 - 20140210048 - Laminate type semiconductor ceramic capacitor with varistor functionality and method for manufacturing the same
A semiconductor ceramic having a compounding molar ratio m between a Sr site and a Ti site that satisfies 1.000≦m≦1.020, has a donor element present as a solid solution in crystal grains, has an acceptor element present in a grain boundary layer in the range of 0.5 mol or less...

07/31/14 - 20140210049 - Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least...

07/24/14 - 20140203400 - Metal-insulator-metal capacitor formation techniques
Techniques and structure are disclosed for providing a MIM capacitor having a generally corrugated profile. The corrugated topography is provisioned using sacrificial, self-organizing materials that effectively create a pattern in response to treatment (heat or other suitable stimulus), which is transferred to a dielectric material in which the MIM capacitor...

07/24/14 - 20140203401 - Metal-on-metal (mom) capacitors having laterally displaced layers, and related systems and methods
Metal-on-Metal (MoM) capacitors having laterally displaced layers and related systems and methods are disclosed. In one embodiment, a MoM capacitor includes a plurality of vertically stacked layers that are laterally displaced relative to one another. Lateral displacement of the layers minimizes cumulative surface process variations making a more reliable and...

07/24/14 - 20140203402 - Solid state drive
Provided is a solid state drive suitable for an increase in capacity. The solid state drive includes a flash memory, and a capacitor electrically connected to the flash memory. The capacitor is composed of an electric double layer capacitor including an electrolyte solution containing propylene carbonate....

07/24/14 - 20140203403 - Electrical device having movable electrode
A movable electric device includes: a first and second fixed electrodes formed on a support substrate, and having opposing electrode surfaces which are substantially perpendicular to the surface of the support substrate, and define a cavity therebetween; a movable member having a movable electrode having a first end disposed near...