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Including Capacitor Component

Including Capacitor Component patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

Related Categories:

Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Integrated Circuit Structure With Electrically Isolated Components > Passive Components In Ics > Including Capacitor Component



Metal capacitor with inner first terminal and outer second terminal
12/18/14 - 20140367827 - A metal capacitor with an inner first terminal (e.g., a positive terminal) and an outer second terminal (e.g., a negative terminal) is disclosed herein. In an exemplary design, an apparatus (e.g., an IC chip) includes a first conductive line for a first terminal of a capacitor and at least one...

Process for producing a through-silicon via and a through-silicon capacitor in a substrate, and corresponding device
12/18/14 - 20140367828 - A device includes a substrate and an integrated-circuit interconnect on a first side. A capacitor passes through the substrate possessing a first electrode having a first contact face electrically coupled to a first electrically conductive zone placed on a second side of the substrate and a second electrode electrically coupled...

Semiconductor devices including capacitors
12/11/14 - 20140361403 - A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second...

Capacitor structure
12/11/14 - 20140361404 - One or more embodiments relate to a semiconductor device, comprising: A semiconductor device, comprising: a semiconductor substrate; a plurality of first conductive vias, the first conductive vias electrically coupled together, each of the first conductive vias passing through the substrate; and a plurality of second conductive vias, the second conductive...

Hybrid semiconductor package
11/27/14 - 20140346637 - A semiconductor package includes a substrate, an RF semiconductor die attached to a first side of the substrate, a capacitor attached to the first side of the substrate, and a first terminal on the first side of the substrate. The semiconductor package further includes copper or aluminum bonding wires or...

Composite reconstituted wafer structures
11/13/14 - 20140332926 - A reconstituted electronic device comprising at least one die and at least one passive component. A functional material is incorporated in the substrate of the device to modify the electrical behaviour of the passive component. The passive component may be formed in redistribution layers of the device. Composite functional materials...

Integrated switchable capacitive device
10/30/14 - 20140319653 - An integrated circuit includes a substrate. A fixed main capacitor electrode is disposed in a metal layer overlying the substrate. A second main capacitor electrode is disposed in a metal layer and spaced from the fixed main capacitor electrode. A movable capacitor electrode is disposed adjacent the fixed main capacitor...

Stacked capacitor structure and a fabricating method for fabricating the same
10/23/14 - 20140312460 - A stacked capacitor structure of the instant disclosure comprises a substrate and a plurality of stacked capacitors. The substrate has an insulating layer formed thereon and a plurality of contact plugs in the insulating layer, wherein the contact plugs are exposed on the upper surface of the insulating layer. Specially,...

Semiconductor device and method for manufacturing the same
10/09/14 - 20140299965 - After the formation of a first interlayer insulating, an etching stopper film made of SiON is formed thereon. Subsequently, a contact hole extending from the upper surface of the etching stopper film and reaching a high concentration impurity region is formed, and a first plug is formed by filling W...

Hermetic packaging of integrated circuit components
10/09/14 - 20140299966 - A method for forming an integrated circuit includes transforming at least a portion of a first substrate layer to form a conductive region within the first substrate layer. An integrated circuit device is provided proximate an outer surface of the first substrate layer. The integrated circuit device transmits or receives...

Semiconductor structures with metal lines
10/02/14 - 20140291802 - Disclosed are semiconductor structures with metal lines and methods of manufacture which reduce or eliminate extrusion formation. The method includes forming a metal wiring comprising a layered structure of metal materials with an upper constraining layer. The method further includes forming a film on the metal wiring which prevents metal...

Capacitor structure of gate driver in panel
10/02/14 - 20140291803 - A capacitor structure of gate driver in panel (GIP) includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a first and second transparent capacitor electrode layers. The first dielectric layer covers the first metal layer. The second metal layer is disposed on...

Semiconductor devices having balancing capacitor and methods of forming the same
10/02/14 - 20140291804 - A semiconductor memory device includes a substrate including cell block, a balancing block, and a sense block. A plurality of cell bit lines are formed in the cell block of. A plurality of cell plugs are formed adjacent to side surfaces of the bit lines. Cell inner spacers, air spacers,...

Semiconductor device containing mim capacitor and fabrication method
10/02/14 - 20140291805 - A semiconductor device containing an MIM capacitor and its fabrication method are provided. A metal-insulator-metal (MIM) capacitor is formed on a first interlayer dielectric layer covering a substrate. The MIM capacitor includes a bottom electrode layer and a top electrode layer that are isolated from and laterally staggered with one...

Capacitor arrays for minimizing gradient effects and methods of forming the same
10/02/14 - 20140291806 - Semiconductor devices having capacitor arrays. A semiconductor device is formed including a capacitor array formed in a plurality of cells in a two-dimensional grid. The capacitor array includes a plurality of operational capacitors formed in a first subset of the plurality of cells along a diagonal of the capacitor array....

Semiconductor package having heat slug and passive device
09/25/14 - 20140284764 - Provided is a semiconductor package including a substrate, a semiconductor chip and a passive device disposed on the substrate, and a heat slug configured to cover the semiconductor chip and the passive device. The substrate and a first electrode of the passive device are electrically connected to each other, and...

Electric power conversion apparatus
09/25/14 - 20140284765 - An electric power conversion apparatus includes a stacked body, a capacitor, a metal frame and a case. The stacked body is formed by stacking semiconductor modules with coolant passages formed therebetween. The frame has both the stacked body and the capacitor fixed therein. The case has all of the stacked...

Ferroelectric capacitor
09/25/14 - 20140284766 - A ferroelectric capacitor includes a ferroelectric film, a lower electrode in contact with one surface of the ferroelectric film, and an upper electrode in contact with the other surface of the ferroelectric film. At least one of the upper electrode and the lower electrode has a stacked electrode structure in...

Methods of forming under device interconnect structures
09/18/14 - 20140264739 - Methods of forming microelectronic interconnect under device structures are described. Those methods and structures may include forming a device layer in a first substrate, forming at least one routing layer in a second substrate, and then coupling the first substrate with the second substrate, wherein the first substrate is bonded...

Semiconductor device
09/18/14 - 20140264740 - respective regions of the second and third conductive layers form a second capacitor....

Capacitor using barrier layer metallurgy
09/18/14 - 20140264741 - A metal-insulator-metal (MIM) capacitor using barrier layer metallurgy and methods of manufacture are disclosed. The method includes forming a bottom plate of a metal-insulator-metal (MIM) capacitor and a bonding pad using a single masking process. The method further includes forming a MIM dielectric on the bottom plate. The method further...

Integrated capacitor
09/18/14 - 20140264742 - A structure includes first, second, and third conductive leaf structures. The first conductive leaf structure includes a first conductive midrib and conductive veins. The second conductive leaf structure is electrically connected to the first conductive leaf structure, and includes a second conductive midrib, conductive veins extending toward the first conductive...

Novel structure of metal gate mim
09/18/14 - 20140264743 - First and second multi-layer structures are formed within respective openings in at least one dielectric layer formed over a semiconductor substrate. The first multi-layer structure comprises a gate electrode, and the second multi-layer structure comprises a resistor and a first electrode of a metal-insulator-metal (MIM) capacitor structure. The MIM capacitor...

Stacked semiconductor device and method of forming the same
09/18/14 - 20140264744 - A stacked semiconductor device includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth...

Transmission line formed adjacent seal ring
09/18/14 - 20140264745 - An integrated circuit device includes a semiconductor body, active components formed over the semiconductor body, one or more seal rings surrounding the active components, and a signal line. One or more of the seal rings are configured to provide the primary return path for current flowing through the signal line....

Self aligned capacitor fabrication
09/18/14 - 20140264746 - A capacitor and method for fabricating the same. In one configuration, the capacitor has a silicon substrate, a first and a second silicon dioxide layer over the silicon substrate, and silicon nitride fins between the silicon dioxide layers. The capacitor further includes a dielectric layer over the silicon nitride fins...

Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
09/18/14 - 20140264747 - A dielectric layer can achieve a crystallography orientation similar to a base dielectric layer with a conductive layer disposed between the two dielectric layers. By providing a conductive layer having similar crystal structure and lattice parameters with the base dielectric layer, the crystallography orientation can be carried from the base...

Manufacturing method of semiconductor device and semiconductor device
09/18/14 - 20140264748 - A step of forming a stacked film serving as a lower electrode, a step of forming an insulating film serving as a capacitive film on the stacked film, and a step of patterning the insulating film and the stacked film are performed. In the step of forming the stacked film,...

Semiconductor device
09/18/14 - 20140264749 - A semiconductor device includes a first insulating layer, a contact plug formed in the first insulating layer, a first etch stop layer over the first insulating layer, a second etch stop layer over the first etch stop layer, a second insulating layer over the second etch stop layer and having...

Metal-oxide-metal (mom) capacitor with enhanced capacitance
09/11/14 - 20140252543 - A particular metal-oxide-metal (MOM) capacitor device includes a conductive gate material coupled to a substrate. The MOM capacitor device further includes a first metal structure coupled to the conductive gate material. The MOM capacitor device further includes a second metal structure coupled to the substrate and proximate to the first...

Dc/ ac dual function power delivery network (pdn) decoupling capacitor
09/11/14 - 20140252544 - Some implementations provide a semiconductor device that includes a first substrate, a die coupled to the first substrate, and a set of solder balls coupled to the first substrate. The set of solder balls is configured to provide an electrical connection between the die and a second substrate. The semiconductor...

Contact structure and semiconductor memory device using the same
09/11/14 - 20140252545 - A semiconductor memory device includes a substrate having thereon a memory array region and a periphery circuit region. A first dielectric layer covers the memory array region and the periphery circuit region on the substrate. A second dielectric layer covers the memory array region and the periphery circuit region on...

Switched capacitor structure
09/11/14 - 20140252546 - A capacitor structure comprising semiconductor substrate and a matrix of capacitor units formed over the semiconductor substrate each capacitor unit. The matrix includes an interior structure comprised of one or more vertical plates, each vertical plate of the interior structure formed from a plurality of conductive portions connected vertically to...

Semiconductor device having integrated passive device and process for manufacturing the same
09/11/14 - 20140252547 - The present invention relates to a semiconductor device and a process for fabricating the same. In one embodiment, the semiconductor device includes a substrate and a plurality of integrated passive devices. The integrated passive devices are disposed on the substrate and include at least two capacitors which have different capacitance...

Filter and capacitor using redistribution layer and micro bump layer
09/11/14 - 20140252548 - An integrated circuit package includes a die. An electrically conductive layer comprises a redistribution layer (RDL) in the die, or a micro-bump layer above the die, or both. The micro bump layer comprises at least one micro-bump line. A filter comprises the electrically conductive layer. A capacitor comprises an electrode...

Metal-insulator-metal capacitor
09/11/14 - 20140252549 - An embodiment metal-insulator-metal (MiM) capacitor includes a gate stack disposed upon an insulation layer, the gate stack including a gate metal, the gate metal serving as a bottom electrode, a dielectric layer disposed upon the gate stack, and a top metal layer disposed upon the dielectric layer, the top metal...

Stack capacitor structure and manufacturing method thereof
09/11/14 - 20140252550 - The present invention provides a stack capacitor structure and a manufacturing method thereof, adapted for a random access memory. The stack capacitor structure is formed on a semiconductor substrate. The stack capacitor structure includes an oxide layer and a circular-shaped stopping layer. The oxide layer is disposed on the semiconductor...

Method and apparatus for constructing an isolation capacitor in an integrated circuit
09/11/14 - 20140252551 - At least one high voltage rated isolation capacitor is formed on a face of a primary integrated circuit die. The isolation capacitor AC couples the primary integrated circuit in a first voltage domain to a second integrated circuit in a second voltage domain. The isolation capacitor DC isolates the primary...

Metal-oxide-metal capacitor
09/04/14 - 20140246754 - Provided is a capacitor of a semiconductor device. The capacitor can includes a plurality of parallel lower conductive lines in parallel and a plurality of upper conductive lines on the lower conductive lines. Each lower conductive line can have a line width that is different than that of the upper...

Buried tsv's used for decaps
08/28/14 - 20140239444 - An interposer having decaps formed in blind-vias, a packaged semiconductor structure having decaps formed in blind-vias, and methods for forming the same are provided. In one embodiment, an interposer is provided that includes an interconnect layer disposed on a substrate. A plurality of through-vias are formed through the substrate in...

Semiconductor device and method of manufacturing the same
08/28/14 - 20140239445 - A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact...

Fractal structures for fixed mems capacitors
08/28/14 - 20140239446 - An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within...

Complementary back end of line (beol) capacitor
08/21/14 - 20140231957 - A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes at least one lower interconnect...

Capacitors having dielectric layers with different band gaps and semiconductor devices using the same
08/21/14 - 20140231958 - A capacitor of a memory device includes dielectric layers with different energy band gaps. The capacitor may include, for example, a first electrode and a first dielectric layer on the first electrode. The capacitor may further include a second dielectric layer on the first dielectric layer. The first and second...

Semiconductor device having storage electrode and manufacturing method thereof
08/21/14 - 20140231959 - A semiconductor device includes a first storage electrode, a second storage electrode that is arranged above the first storage electrode, a first landing pad that is arranged between a top surface of the first storage electrode and a bottom surface of the second storage electrode, the first landing pad connecting...

Package with metal-insulator-metal capacitor and method of manufacturing the same
08/14/14 - 20140225222 - A package includes a chip that has a metal-insulator-metal (MIM) capacitor formed in a first polymer layer and a metallic pillar formed on the MIM capacitor. A molding compound surrounds the chip, a second polymer layer is formed on the chip and the molding compound, a third polymer layer is...

Metal-insulator-metal capacitor over conductive layer
08/14/14 - 20140225223 - A method of fabricating a metal-insulator-metal (MIM) capacitor reduces the number of masks and processing steps compared to conventional techniques. A conductive redistribution layer (RDL) is patterned on a semiconductor chip. A MIM dielectric layer is deposited over the RDL. A first conductive layer of a MIM capacitor is deposited...

Metal-insulator-metal capacitor under redistribution layer
08/14/14 - 20140225224 - A metal-insulator-metal (MIM) capacitor reduces a number of masks and processing steps compared to conventional techniques. A first conductive layer of a MIM capacitor is deposited on a semiconductor chip and patterned using a MIM conductive layer mask. A conductive redistribution layer (RDL) is patterned over the MIM dielectric layer....

Capacitor structures for including high capacitance per unit area
08/14/14 - 20140225225 - A capacitor structure comprises a substrate extending in a horizontal direction of extension. A first gate insulating film is on the substrate and a first gate pattern is on the first gate insulating film. A first finger-shaped electrode is on the first gate pattern, and a second finger-shaped electrode is...

Multi-step deposition of ferroelectric dielectric material
08/14/14 - 20140225226 - Multi-step deposition of lead-zirconium-titanate (PZT) ferroelectric material. An initial portion of the PZT material is deposited by metalorganic chemical vapor deposition (MOCVD) at a low deposition rate, for example at a temperature below about 640 deg C. from vaporized liquid precursors of lead, zirconium, and titanium, and a solvent at...

Protecting element having first and second high concentration impurity regions separated by insulating region and method
08/14/14 - 20140225227 - With a microwave FET, an incorporated Schottky junction capacitance or PN junction capacitance is small and such a junction is weak against static electricity. However, with a microwave device, the method of connecting a protecting diode cannot be used since this method increases the parasitic capacitance and causes degradation of...

Semiconductor device and method of manufacturing semiconductor device
08/07/14 - 20140217548 - A semiconductor device includes a substrate, a metal film on a portion of the substrate, a first dielectric film having a first portion on the metal film and a second portion on the substrate, the second portion being integral with the first portion, a lower electrode on the first portion,...

Decoupling mim capacitor designs for interposers and methods of manufacture thereof
08/07/14 - 20140217549 - Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device....

Laminate type semiconductor ceramic capacitor with varistor functionality and method for manufacturing the same
07/31/14 - 20140210048 - A semiconductor ceramic having a compounding molar ratio m between a Sr site and a Ti site that satisfies 1.000≦m≦1.020, has a donor element present as a solid solution in crystal grains, has an acceptor element present in a grain boundary layer in the range of 0.5 mol or less...

Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
07/31/14 - 20140210049 - Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least...

Metal-insulator-metal capacitor formation techniques
07/24/14 - 20140203400 - Techniques and structure are disclosed for providing a MIM capacitor having a generally corrugated profile. The corrugated topography is provisioned using sacrificial, self-organizing materials that effectively create a pattern in response to treatment (heat or other suitable stimulus), which is transferred to a dielectric material in which the MIM capacitor...

Metal-on-metal (mom) capacitors having laterally displaced layers, and related systems and methods
07/24/14 - 20140203401 - Metal-on-Metal (MoM) capacitors having laterally displaced layers and related systems and methods are disclosed. In one embodiment, a MoM capacitor includes a plurality of vertically stacked layers that are laterally displaced relative to one another. Lateral displacement of the layers minimizes cumulative surface process variations making a more reliable and...

Solid state drive
07/24/14 - 20140203402 - Provided is a solid state drive suitable for an increase in capacity. The solid state drive includes a flash memory, and a capacitor electrically connected to the flash memory. The capacitor is composed of an electric double layer capacitor including an electrolyte solution containing propylene carbonate....

Electrical device having movable electrode
07/24/14 - 20140203403 - A movable electric device includes: a first and second fixed electrodes formed on a support substrate, and having opposing electrode surfaces which are substantially perpendicular to the surface of the support substrate, and define a cavity therebetween; a movable member having a movable electrode having a first end disposed near...

Stacked structure semiconductor device
07/17/14 - 20140197518 - A semiconductor device includes a capacitor formed in a semiconductor substrate of a first conductivity type. The capacitor includes: a heavily-doped layer of a second conductivity type placed over the substrate, a first insulating layer placed over the heavily-doped layer of the second conductivity type, and a first metal layer...

Method of fabricating metal-insulator-metal (mim) capacitor within topmost thick inter-metal dielectric layers
07/10/14 - 20140191364 - Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 KŘ30 KÅ) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating...

Capacitor in post-passivation structures and methods of forming the same
07/03/14 - 20140183693 - A device includes a metal pad and a passivation layer having a portion overlapping the metal pad. A capacitor includes a bottom capacitor electrode underlying the passivation layer, wherein the bottom capacitor includes the metal pad. The capacitor further includes a top capacitor electrode over the portion of the passivation...

Energy storage devices formed with porous silicon
07/03/14 - 20140183694 - In one embodiment, an energy storage device (e.g., capacitor) may include a porous silicon layer formed within a substrate. The porous silicon layer includes pores with a mean pore diameter less than approximately 100 nanometers. A first conductive layer is formed on the porous silicon layer and a first dielectric...

Methods for reproducible flash layer deposition
07/03/14 - 20140183695 - A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer....

Methods to improve leakage for zro2 based high k mim capacitor
07/03/14 - 20140183696 - A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and...

High work function, manufacturable top electrode
07/03/14 - 20140183697 - Provided are MIM DRAM capacitors and methods of forming thereof. A MIM DRAM capacitor may include an electrode layer formed from a high work function material (e.g., greater than about 5.0 eV). This layer may be used to reduce the leakage current through the capacitor. The capacitor may also include...

Galvanically-isolated device and method for fabricating the same
07/03/14 - 20140183698 - A galvanically-isolated device and a method for fabricating the same are provided. The galvanically-isolated device includes a lead frame including a first die-attach pad, a first lead and a second lead. A substrate is disposed on the first die-attach pad. A high-voltage semiconductor capacitor formed on the substrate includes an...

Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
06/26/14 - 20140175603 - MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes....

Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
06/26/14 - 20140175604 - Electrodes, which contain molybdenum dioxide (MoO2) can be used in electronic components, such as memory or logic devices. The molybdenum-dioxide containing electrodes can also have little or no molybdenum element, together with a portion of molybdenum oxide, e.g., MoOx with x between 2 and 3. The molybdenum oxide can be...

Semiconductor chip and semiconductor apparatus with embedded capacitor
06/26/14 - 20140175605 - A semiconductor chip includes a semiconductor substrate having one and the other surfaces and formed with a plurality of semiconductor devices; an internal wiring layer having multi-layered internal wiring lines which are formed over the one surface and are electrically connected with the plurality of semiconductor devices, an uppermost internal...

Varactor
06/26/14 - 20140175606 - A varactor is provided. A substrate includes a first surface, a second surface and a first opening and a second opening in the substrate. A conductive material is filling the first and second openings, to form a first through-wafer via (TWV) and a second through-wafer via. A first capacitor is...

Semiconductor device integrating passive elements
06/26/14 - 20140175607 - The present invention provides a semiconductor device integrating passive elements, which applies to analog circuits, wherein capacitors, resistors and inductors are fabricated by a TVS technology. The semiconductor device comprises a substrate; at least one passive element arranged in the substrate; and at least one semiconductor integrated circuit formed in...

Method for including decoupling capacitors into semiconductor circuit having logic circuit therein and semiconductor circuit thereof
06/26/14 - 20140175608 - A method for including decoupling capacitors into a semiconductor circuit having at least a logic circuit therein, includes: arranging a first decoupling capacitor and a second decoupling capacitor into a first area and a second area around the logic circuit respectively, wherein a gate oxide thickness of the first decoupling...