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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Integrated Circuit Structure With Electrically Isolated Components > Passive Components In Ics > Including Capacitor Component

Including Capacitor Component

Including Capacitor Component patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

08/28/14 - 20140239444 - Buried tsv's used for decaps
An interposer having decaps formed in blind-vias, a packaged semiconductor structure having decaps formed in blind-vias, and methods for forming the same are provided. In one embodiment, an interposer is provided that includes an interconnect layer disposed on a substrate. A plurality of through-vias are formed through the substrate in...

08/28/14 - 20140239445 - Semiconductor device and method of manufacturing the same
A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact...

08/28/14 - 20140239446 - Fractal structures for fixed mems capacitors
An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within...

08/21/14 - 20140231957 - Complementary back end of line (beol) capacitor
A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes at least one lower interconnect...

08/21/14 - 20140231958 - Capacitors having dielectric layers with different band gaps and semiconductor devices using the same
A capacitor of a memory device includes dielectric layers with different energy band gaps. The capacitor may include, for example, a first electrode and a first dielectric layer on the first electrode. The capacitor may further include a second dielectric layer on the first dielectric layer. The first and second...

08/21/14 - 20140231959 - Semiconductor device having storage electrode and manufacturing method thereof
A semiconductor device includes a first storage electrode, a second storage electrode that is arranged above the first storage electrode, a first landing pad that is arranged between a top surface of the first storage electrode and a bottom surface of the second storage electrode, the first landing pad connecting...

08/14/14 - 20140225222 - Package with metal-insulator-metal capacitor and method of manufacturing the same
A package includes a chip that has a metal-insulator-metal (MIM) capacitor formed in a first polymer layer and a metallic pillar formed on the MIM capacitor. A molding compound surrounds the chip, a second polymer layer is formed on the chip and the molding compound, a third polymer layer is...

08/14/14 - 20140225223 - Metal-insulator-metal capacitor over conductive layer
A method of fabricating a metal-insulator-metal (MIM) capacitor reduces the number of masks and processing steps compared to conventional techniques. A conductive redistribution layer (RDL) is patterned on a semiconductor chip. A MIM dielectric layer is deposited over the RDL. A first conductive layer of a MIM capacitor is deposited...

08/14/14 - 20140225224 - Metal-insulator-metal capacitor under redistribution layer
A metal-insulator-metal (MIM) capacitor reduces a number of masks and processing steps compared to conventional techniques. A first conductive layer of a MIM capacitor is deposited on a semiconductor chip and patterned using a MIM conductive layer mask. A conductive redistribution layer (RDL) is patterned over the MIM dielectric layer....

08/14/14 - 20140225225 - Capacitor structures for including high capacitance per unit area
A capacitor structure comprises a substrate extending in a horizontal direction of extension. A first gate insulating film is on the substrate and a first gate pattern is on the first gate insulating film. A first finger-shaped electrode is on the first gate pattern, and a second finger-shaped electrode is...

08/14/14 - 20140225226 - Multi-step deposition of ferroelectric dielectric material
Multi-step deposition of lead-zirconium-titanate (PZT) ferroelectric material. An initial portion of the PZT material is deposited by metalorganic chemical vapor deposition (MOCVD) at a low deposition rate, for example at a temperature below about 640 deg C. from vaporized liquid precursors of lead, zirconium, and titanium, and a solvent at...

08/14/14 - 20140225227 - Protecting element having first and second high concentration impurity regions separated by insulating region and method
With a microwave FET, an incorporated Schottky junction capacitance or PN junction capacitance is small and such a junction is weak against static electricity. However, with a microwave device, the method of connecting a protecting diode cannot be used since this method increases the parasitic capacitance and causes degradation of...

08/07/14 - 20140217548 - Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes a substrate, a metal film on a portion of the substrate, a first dielectric film having a first portion on the metal film and a second portion on the substrate, the second portion being integral with the first portion, a lower electrode on the first portion,...

08/07/14 - 20140217549 - Decoupling mim capacitor designs for interposers and methods of manufacture thereof
Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device....

07/31/14 - 20140210048 - Laminate type semiconductor ceramic capacitor with varistor functionality and method for manufacturing the same
A semiconductor ceramic having a compounding molar ratio m between a Sr site and a Ti site that satisfies 1.000≦m≦1.020, has a donor element present as a solid solution in crystal grains, has an acceptor element present in a grain boundary layer in the range of 0.5 mol or less...

07/31/14 - 20140210049 - Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least...

07/24/14 - 20140203400 - Metal-insulator-metal capacitor formation techniques
Techniques and structure are disclosed for providing a MIM capacitor having a generally corrugated profile. The corrugated topography is provisioned using sacrificial, self-organizing materials that effectively create a pattern in response to treatment (heat or other suitable stimulus), which is transferred to a dielectric material in which the MIM capacitor...

07/24/14 - 20140203401 - Metal-on-metal (mom) capacitors having laterally displaced layers, and related systems and methods
Metal-on-Metal (MoM) capacitors having laterally displaced layers and related systems and methods are disclosed. In one embodiment, a MoM capacitor includes a plurality of vertically stacked layers that are laterally displaced relative to one another. Lateral displacement of the layers minimizes cumulative surface process variations making a more reliable and...

07/24/14 - 20140203402 - Solid state drive
Provided is a solid state drive suitable for an increase in capacity. The solid state drive includes a flash memory, and a capacitor electrically connected to the flash memory. The capacitor is composed of an electric double layer capacitor including an electrolyte solution containing propylene carbonate....

07/24/14 - 20140203403 - Electrical device having movable electrode
A movable electric device includes: a first and second fixed electrodes formed on a support substrate, and having opposing electrode surfaces which are substantially perpendicular to the surface of the support substrate, and define a cavity therebetween; a movable member having a movable electrode having a first end disposed near...

07/17/14 - 20140197518 - Stacked structure semiconductor device
A semiconductor device includes a capacitor formed in a semiconductor substrate of a first conductivity type. The capacitor includes: a heavily-doped layer of a second conductivity type placed over the substrate, a first insulating layer placed over the heavily-doped layer of the second conductivity type, and a first metal layer...

07/10/14 - 20140191364 - Method of fabricating metal-insulator-metal (mim) capacitor within topmost thick inter-metal dielectric layers
Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 KŘ30 KÅ) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating...

07/03/14 - 20140183693 - Capacitor in post-passivation structures and methods of forming the same
A device includes a metal pad and a passivation layer having a portion overlapping the metal pad. A capacitor includes a bottom capacitor electrode underlying the passivation layer, wherein the bottom capacitor includes the metal pad. The capacitor further includes a top capacitor electrode over the portion of the passivation...

07/03/14 - 20140183694 - Energy storage devices formed with porous silicon
In one embodiment, an energy storage device (e.g., capacitor) may include a porous silicon layer formed within a substrate. The porous silicon layer includes pores with a mean pore diameter less than approximately 100 nanometers. A first conductive layer is formed on the porous silicon layer and a first dielectric...

07/03/14 - 20140183695 - Methods for reproducible flash layer deposition
A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer....

07/03/14 - 20140183696 - Methods to improve leakage for zro2 based high k mim capacitor
A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and...

07/03/14 - 20140183697 - High work function, manufacturable top electrode
Provided are MIM DRAM capacitors and methods of forming thereof. A MIM DRAM capacitor may include an electrode layer formed from a high work function material (e.g., greater than about 5.0 eV). This layer may be used to reduce the leakage current through the capacitor. The capacitor may also include...

07/03/14 - 20140183698 - Galvanically-isolated device and method for fabricating the same
A galvanically-isolated device and a method for fabricating the same are provided. The galvanically-isolated device includes a lead frame including a first die-attach pad, a first lead and a second lead. A substrate is disposed on the first die-attach pad. A high-voltage semiconductor capacitor formed on the substrate includes an...

06/26/14 - 20140175603 - Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes....

06/26/14 - 20140175604 - Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
Electrodes, which contain molybdenum dioxide (MoO2) can be used in electronic components, such as memory or logic devices. The molybdenum-dioxide containing electrodes can also have little or no molybdenum element, together with a portion of molybdenum oxide, e.g., MoOx with x between 2 and 3. The molybdenum oxide can be...

06/26/14 - 20140175605 - Semiconductor chip and semiconductor apparatus with embedded capacitor
A semiconductor chip includes a semiconductor substrate having one and the other surfaces and formed with a plurality of semiconductor devices; an internal wiring layer having multi-layered internal wiring lines which are formed over the one surface and are electrically connected with the plurality of semiconductor devices, an uppermost internal...

06/26/14 - 20140175606 - Varactor
A varactor is provided. A substrate includes a first surface, a second surface and a first opening and a second opening in the substrate. A conductive material is filling the first and second openings, to form a first through-wafer via (TWV) and a second through-wafer via. A first capacitor is...

06/26/14 - 20140175607 - Semiconductor device integrating passive elements
The present invention provides a semiconductor device integrating passive elements, which applies to analog circuits, wherein capacitors, resistors and inductors are fabricated by a TVS technology. The semiconductor device comprises a substrate; at least one passive element arranged in the substrate; and at least one semiconductor integrated circuit formed in...

06/26/14 - 20140175608 - Method for including decoupling capacitors into semiconductor circuit having logic circuit therein and semiconductor circuit thereof
A method for including decoupling capacitors into a semiconductor circuit having at least a logic circuit therein, includes: arranging a first decoupling capacitor and a second decoupling capacitor into a first area and a second area around the logic circuit respectively, wherein a gate oxide thickness of the first decoupling...

06/19/14 - 20140167220 - Three dimensional capacitor
Integrated capacitor structures and methods for fabricating same are provided. In an embodiment, the integrated capacitor structures exploit the capacitance that can be formed in a plane that is perpendicular to that of the substrate, resulting in three-dimensional capacitor structures. This allows for integrated capacitor structures with higher capacitance to...

06/19/14 - 20140167221 - Methods to improve leakage of high k materials
A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor layer inserted between the dielectric layer and at least one of the two electrode layers. In some embodiments, the dielectric layer may be doped with an oxygen donor dopant. The...

06/12/14 - 20140159197 - Self-aligned deep trench capacitor, and method for making the same
A method for forming a trench capacitor includes providing a substrate of a semiconductor material having a hard mask layer; etching the hard mask layer and the substrate to form at least one trench extending into the substrate; and performing pull-back etching on the hard mask layer. In the pull-back...

06/12/14 - 20140159198 - Integrated circuits including integrated passive devices and methods of manufacture thereof
Embodiments of integrated passive devices (e.g., metal insulator metal, or MIM, capacitors) and methods of their formation include depositing a composite electrode over a semiconductor substrate (e.g., on a dielectric layer above the substrate surface), and depositing an insulator layer over the composite electrode. The composite electrode includes an underlying...

06/12/14 - 20140159199 - High density serial capacitor device and methods of making such a capacitor device
A serial capacitor comprised of a bottom electrode, a top electrode that is conductively coupled the bottom electrode, a middle electrode positioned between the bottom and top electrode, a lower dielectric layer positioned between the bottom and middle electrodes, and an upper dielectric layer positioned between the middle and the...

06/12/14 - 20140159200 - High-density stacked planar metal-insulator-metal capacitor structure and method for manufacturing same
An embodiment of a high-density, stacked, planar metal-insulator-metal (MIM) capacitor structure includes a stack of planar electrodes and interposing dielectric layers. Vertically-alternating electrodes are horizontally-staggered, and vias are formed through the multiple electrodes, so that electrical connection is made circumferentially through the via sidewalls to multiple electrodes through which a...

06/12/14 - 20140159201 - Single pattern high precision capacitor
An integrated circuit contains a high precision capacitor having a bottom plate, a dielectric layer over the bottom plate, a capacitor opening in the dielectric layer exposing, and not overlapping, the bottom plate, a capacitor dielectric layer covering sidewalls and a bottom of the capacitor opening, a top plate covering...

06/12/14 - 20140159202 - Method for forming a three-dimensional structure of metal-insulator-metal type
A method for forming a capacitive structure in a metal level of an interconnection stack including a succession of metal levels and of via levels, including the steps of: forming, in the metal level, at least one conductive track in which a trench is defined; conformally forming an insulating layer...

06/05/14 - 20140151847 - Area-efficient capacitor using carbon nanotubes
An on-chip decoupling capacitor is disclosed. One or more carbon nanotubes are coupled to a first electrode of the capacitor. A dielectric skin is formed on the one or more carbon nanotubes. A metal coating is formed on the dielectric skin. The dielectric skin is configured to electrically isolate the...

06/05/14 - 20140151848 - Mimcap structure in a semiconductor device package
The disclosed technology relates generally to a semiconductor device package comprising a metal-insulator-metal capacitor (MIMCAP). In one aspect, the MIMCAP is formed between a first and second metallization layers in a stack of metallization layers, e.g., copper metallization layers formed by single damascene processes. The MIMCAP comprises a bottom plate...

06/05/14 - 20140151849 - Electronic components on trenched substrates and method of forming same
An electronic module includes a substrate including at least one structure that reduces stress flow through the substrate, wherein the structure includes at least one trench in a surface of the substrate, and a plurality of capacitor legs disposed on an upper surface of the substrate....

06/05/14 - 20140151850 - Plated structures
A method and structure is directed to eDRAM cells with high-conductance electrodes. The method includes forming upper layers on a semiconductor substrate and forming an opening in the upper layers. The method further includes forming a trench in the semiconductor substrate, aligned with the opening. The method further includes forming...

06/05/14 - 20140151851 - Tapered via and mim capacitor
A chip capacitor and interconnecting wiring is described incorporating a metal insulator metal (MIM) capacitor, tapered vias and vias coupled to one or both of the top and bottom electrodes of the capacitor in an integrated circuit. A design structure tangibly embodied in a machine readable medium is described incorporating...

05/29/14 - 20140145299 - Deep trench structure for high density capacitor
Some embodiments relate to high density capacitor structures. Some embodiments include a semiconductor substrate having an conductive region with a plurality of trenches formed therein. A first dielectric layer is formed over respective bottom portions and respective sidewall portions of the respective trenches. A first conductive layer is formed in...

05/29/14 - 20140145300 - Integration of chips and silicon-based trench capacitors using low parasitic silicon-level connections
Methods and apparatuses are described for integration of integrated circuit die and silicon-based trench capacitors using silicon-level connections to reduce connection lengths, parasitics and necessary capacitance magnitudes and volumes. A trench capacitor can be fabricated on silicon and mounted on or embedded in a chip or one or more sides...

05/29/14 - 20140145301 - Single-chip integrated circuit with capacitive isolation
An integrated circuit, including at least two integrated circuit portions mutually spaced on a single electrically insulating die and at least one coupling region on the die to provide capacitive coupling between the otherwise mutually isolated integrated circuit portions, the integrated circuit portions being formed by a plurality of layers...

05/29/14 - 20140145302 - Mim capacitor and fabrication method
Various embodiments provide an MIM capacitor and fabrication method thereof. An exemplary MIM capacitor can include a dielectric layer disposed over a substrate containing a conductive layer. The dielectric layer can include a groove to expose the conductive layer in the substrate. A first metal layer can be disposed on...

05/29/14 - 20140145303 - Semiconductor device and method of fabricating the same
A semiconductor device and a method of fabricating the same, the device including a substrate having a transistor formed thereon; a plurality of lower electrodes formed on the substrate; a first supporter and a second supporter on the plurality of lower electrodes; a dielectric film formed on the lower electrode,...

05/29/14 - 20140145304 - Stackable high-density metal-oxide-metal capacitor with minimum top plate parasitic capacitance
A system including first and second plurality of conductors stacked along a first axis on a substrate. The first axis is perpendicular to a plane on which the substrate lies. In the first and second plurality of conductors, each conductor is connected to an adjacent conductor by one or more...

05/29/14 - 20140145305 - Capacitor and method of forming a capacitor
A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive...

05/29/14 - 20140145306 - Semiconductor device having glue layer and supporter
A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate...