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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Integrated Circuit Structure With Electrically Isolated Components > Passive Components In Ics > Including Capacitor Component

Including Capacitor Component

Including Capacitor Component patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

07/24/14 - 20140203400 - Metal-insulator-metal capacitor formation techniques
Techniques and structure are disclosed for providing a MIM capacitor having a generally corrugated profile. The corrugated topography is provisioned using sacrificial, self-organizing materials that effectively create a pattern in response to treatment (heat or other suitable stimulus), which is transferred to a dielectric material in which the MIM capacitor...

07/24/14 - 20140203401 - Metal-on-metal (mom) capacitors having laterally displaced layers, and related systems and methods
Metal-on-Metal (MoM) capacitors having laterally displaced layers and related systems and methods are disclosed. In one embodiment, a MoM capacitor includes a plurality of vertically stacked layers that are laterally displaced relative to one another. Lateral displacement of the layers minimizes cumulative surface process variations making a more reliable and...

07/24/14 - 20140203402 - Solid state drive
Provided is a solid state drive suitable for an increase in capacity. The solid state drive includes a flash memory, and a capacitor electrically connected to the flash memory. The capacitor is composed of an electric double layer capacitor including an electrolyte solution containing propylene carbonate....

07/24/14 - 20140203403 - Electrical device having movable electrode
A movable electric device includes: a first and second fixed electrodes formed on a support substrate, and having opposing electrode surfaces which are substantially perpendicular to the surface of the support substrate, and define a cavity therebetween; a movable member having a movable electrode having a first end disposed near...

07/17/14 - 20140197518 - Stacked structure semiconductor device
A semiconductor device includes a capacitor formed in a semiconductor substrate of a first conductivity type. The capacitor includes: a heavily-doped layer of a second conductivity type placed over the substrate, a first insulating layer placed over the heavily-doped layer of the second conductivity type, and a first metal layer...

07/10/14 - 20140191364 - Method of fabricating metal-insulator-metal (mim) capacitor within topmost thick inter-metal dielectric layers
Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 KŘ30 KÅ) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating...

07/03/14 - 20140183693 - Capacitor in post-passivation structures and methods of forming the same
A device includes a metal pad and a passivation layer having a portion overlapping the metal pad. A capacitor includes a bottom capacitor electrode underlying the passivation layer, wherein the bottom capacitor includes the metal pad. The capacitor further includes a top capacitor electrode over the portion of the passivation...

07/03/14 - 20140183694 - Energy storage devices formed with porous silicon
In one embodiment, an energy storage device (e.g., capacitor) may include a porous silicon layer formed within a substrate. The porous silicon layer includes pores with a mean pore diameter less than approximately 100 nanometers. A first conductive layer is formed on the porous silicon layer and a first dielectric...

07/03/14 - 20140183695 - Methods for reproducible flash layer deposition
A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer....

07/03/14 - 20140183696 - Methods to improve leakage for zro2 based high k mim capacitor
A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and...

07/03/14 - 20140183697 - High work function, manufacturable top electrode
Provided are MIM DRAM capacitors and methods of forming thereof. A MIM DRAM capacitor may include an electrode layer formed from a high work function material (e.g., greater than about 5.0 eV). This layer may be used to reduce the leakage current through the capacitor. The capacitor may also include...

07/03/14 - 20140183698 - Galvanically-isolated device and method for fabricating the same
A galvanically-isolated device and a method for fabricating the same are provided. The galvanically-isolated device includes a lead frame including a first die-attach pad, a first lead and a second lead. A substrate is disposed on the first die-attach pad. A high-voltage semiconductor capacitor formed on the substrate includes an...

06/26/14 - 20140175603 - Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes....

06/26/14 - 20140175604 - Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
Electrodes, which contain molybdenum dioxide (MoO2) can be used in electronic components, such as memory or logic devices. The molybdenum-dioxide containing electrodes can also have little or no molybdenum element, together with a portion of molybdenum oxide, e.g., MoOx with x between 2 and 3. The molybdenum oxide can be...

06/26/14 - 20140175605 - Semiconductor chip and semiconductor apparatus with embedded capacitor
A semiconductor chip includes a semiconductor substrate having one and the other surfaces and formed with a plurality of semiconductor devices; an internal wiring layer having multi-layered internal wiring lines which are formed over the one surface and are electrically connected with the plurality of semiconductor devices, an uppermost internal...

06/26/14 - 20140175606 - Varactor
A varactor is provided. A substrate includes a first surface, a second surface and a first opening and a second opening in the substrate. A conductive material is filling the first and second openings, to form a first through-wafer via (TWV) and a second through-wafer via. A first capacitor is...

06/26/14 - 20140175607 - Semiconductor device integrating passive elements
The present invention provides a semiconductor device integrating passive elements, which applies to analog circuits, wherein capacitors, resistors and inductors are fabricated by a TVS technology. The semiconductor device comprises a substrate; at least one passive element arranged in the substrate; and at least one semiconductor integrated circuit formed in...

06/26/14 - 20140175608 - Method for including decoupling capacitors into semiconductor circuit having logic circuit therein and semiconductor circuit thereof
A method for including decoupling capacitors into a semiconductor circuit having at least a logic circuit therein, includes: arranging a first decoupling capacitor and a second decoupling capacitor into a first area and a second area around the logic circuit respectively, wherein a gate oxide thickness of the first decoupling...

06/19/14 - 20140167220 - Three dimensional capacitor
Integrated capacitor structures and methods for fabricating same are provided. In an embodiment, the integrated capacitor structures exploit the capacitance that can be formed in a plane that is perpendicular to that of the substrate, resulting in three-dimensional capacitor structures. This allows for integrated capacitor structures with higher capacitance to...

06/19/14 - 20140167221 - Methods to improve leakage of high k materials
A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor layer inserted between the dielectric layer and at least one of the two electrode layers. In some embodiments, the dielectric layer may be doped with an oxygen donor dopant. The...

06/12/14 - 20140159197 - Self-aligned deep trench capacitor, and method for making the same
A method for forming a trench capacitor includes providing a substrate of a semiconductor material having a hard mask layer; etching the hard mask layer and the substrate to form at least one trench extending into the substrate; and performing pull-back etching on the hard mask layer. In the pull-back...

06/12/14 - 20140159198 - Integrated circuits including integrated passive devices and methods of manufacture thereof
Embodiments of integrated passive devices (e.g., metal insulator metal, or MIM, capacitors) and methods of their formation include depositing a composite electrode over a semiconductor substrate (e.g., on a dielectric layer above the substrate surface), and depositing an insulator layer over the composite electrode. The composite electrode includes an underlying...

06/12/14 - 20140159199 - High density serial capacitor device and methods of making such a capacitor device
A serial capacitor comprised of a bottom electrode, a top electrode that is conductively coupled the bottom electrode, a middle electrode positioned between the bottom and top electrode, a lower dielectric layer positioned between the bottom and middle electrodes, and an upper dielectric layer positioned between the middle and the...

06/12/14 - 20140159200 - High-density stacked planar metal-insulator-metal capacitor structure and method for manufacturing same
An embodiment of a high-density, stacked, planar metal-insulator-metal (MIM) capacitor structure includes a stack of planar electrodes and interposing dielectric layers. Vertically-alternating electrodes are horizontally-staggered, and vias are formed through the multiple electrodes, so that electrical connection is made circumferentially through the via sidewalls to multiple electrodes through which a...

06/12/14 - 20140159201 - Single pattern high precision capacitor
An integrated circuit contains a high precision capacitor having a bottom plate, a dielectric layer over the bottom plate, a capacitor opening in the dielectric layer exposing, and not overlapping, the bottom plate, a capacitor dielectric layer covering sidewalls and a bottom of the capacitor opening, a top plate covering...

06/12/14 - 20140159202 - Method for forming a three-dimensional structure of metal-insulator-metal type
A method for forming a capacitive structure in a metal level of an interconnection stack including a succession of metal levels and of via levels, including the steps of: forming, in the metal level, at least one conductive track in which a trench is defined; conformally forming an insulating layer...

06/05/14 - 20140151847 - Area-efficient capacitor using carbon nanotubes
An on-chip decoupling capacitor is disclosed. One or more carbon nanotubes are coupled to a first electrode of the capacitor. A dielectric skin is formed on the one or more carbon nanotubes. A metal coating is formed on the dielectric skin. The dielectric skin is configured to electrically isolate the...

06/05/14 - 20140151848 - Mimcap structure in a semiconductor device package
The disclosed technology relates generally to a semiconductor device package comprising a metal-insulator-metal capacitor (MIMCAP). In one aspect, the MIMCAP is formed between a first and second metallization layers in a stack of metallization layers, e.g., copper metallization layers formed by single damascene processes. The MIMCAP comprises a bottom plate...

06/05/14 - 20140151849 - Electronic components on trenched substrates and method of forming same
An electronic module includes a substrate including at least one structure that reduces stress flow through the substrate, wherein the structure includes at least one trench in a surface of the substrate, and a plurality of capacitor legs disposed on an upper surface of the substrate....

06/05/14 - 20140151850 - Plated structures
A method and structure is directed to eDRAM cells with high-conductance electrodes. The method includes forming upper layers on a semiconductor substrate and forming an opening in the upper layers. The method further includes forming a trench in the semiconductor substrate, aligned with the opening. The method further includes forming...

06/05/14 - 20140151851 - Tapered via and mim capacitor
A chip capacitor and interconnecting wiring is described incorporating a metal insulator metal (MIM) capacitor, tapered vias and vias coupled to one or both of the top and bottom electrodes of the capacitor in an integrated circuit. A design structure tangibly embodied in a machine readable medium is described incorporating...

05/29/14 - 20140145299 - Deep trench structure for high density capacitor
Some embodiments relate to high density capacitor structures. Some embodiments include a semiconductor substrate having an conductive region with a plurality of trenches formed therein. A first dielectric layer is formed over respective bottom portions and respective sidewall portions of the respective trenches. A first conductive layer is formed in...

05/29/14 - 20140145300 - Integration of chips and silicon-based trench capacitors using low parasitic silicon-level connections
Methods and apparatuses are described for integration of integrated circuit die and silicon-based trench capacitors using silicon-level connections to reduce connection lengths, parasitics and necessary capacitance magnitudes and volumes. A trench capacitor can be fabricated on silicon and mounted on or embedded in a chip or one or more sides...

05/29/14 - 20140145301 - Single-chip integrated circuit with capacitive isolation
An integrated circuit, including at least two integrated circuit portions mutually spaced on a single electrically insulating die and at least one coupling region on the die to provide capacitive coupling between the otherwise mutually isolated integrated circuit portions, the integrated circuit portions being formed by a plurality of layers...

05/29/14 - 20140145302 - Mim capacitor and fabrication method
Various embodiments provide an MIM capacitor and fabrication method thereof. An exemplary MIM capacitor can include a dielectric layer disposed over a substrate containing a conductive layer. The dielectric layer can include a groove to expose the conductive layer in the substrate. A first metal layer can be disposed on...

05/29/14 - 20140145303 - Semiconductor device and method of fabricating the same
A semiconductor device and a method of fabricating the same, the device including a substrate having a transistor formed thereon; a plurality of lower electrodes formed on the substrate; a first supporter and a second supporter on the plurality of lower electrodes; a dielectric film formed on the lower electrode,...

05/29/14 - 20140145304 - Stackable high-density metal-oxide-metal capacitor with minimum top plate parasitic capacitance
A system including first and second plurality of conductors stacked along a first axis on a substrate. The first axis is perpendicular to a plane on which the substrate lies. In the first and second plurality of conductors, each conductor is connected to an adjacent conductor by one or more...

05/29/14 - 20140145305 - Capacitor and method of forming a capacitor
A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive...

05/29/14 - 20140145306 - Semiconductor device having glue layer and supporter
A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate...

05/22/14 - 20140138793 - Capacitor using middle of line (mol) conductive layers
A method for fabricating a metal-insulator-metal (MIM) capacito includes depositing a first middle of line (MOL) conductive layer over a shallow trench isolation (STI) region of a semiconductor substrate. The first MOL conductive layer provides a first plate of the MIM capacitor as well as a first set of local...

05/22/14 - 20140138794 - Semiconductor device having supporter and method of forming the same
A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode....

05/22/14 - 20140138795 - Capacitors and methods with praseodymium oxide insulators
Methods of forming and the resulting capacitors formed by these methods are shown. Monolayers that contain praseodymium are deposited onto a substrate and subsequently processed to form praseodymium oxide dielectrics. Monolayers that contain titanium or other metals are deposited onto a substrate and subsequently processed to form metal electrodes. Resulting...

05/15/14 - 20140131834 - Decoupling capacitors for interposers
Embodiments of the invention generally relate to interposers for packaging integrated circuits. The interposers include capacitive devices for reducing signal noise and leakage between adjacent integrated circuits coupled to the interposers. The capacitive devices are formed from doped semiconductor layers. In one embodiment, an interposer includes a substrate having doped...

05/15/14 - 20140131835 - Semiconductor device with rutile titanium oxide dielectric film
A capacitor structure includes a first electrode on a substrate; a template layer on the first electrode; a titanium oxide (TiO2) dielectric layer on the template layer, wherein the TiO2 dielectric layer has substantially only rutile phase; and a second electrode on the TiO2 dielectric layer. The titanium oxide dielectric...

05/15/14 - 20140131836 - Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques
Capacitor dielectric (320) can be formed by anodizing tantalum while a nickel layer (314) protects an underlying copper (310) from the anodizing solution. This protection allows the tantalum layer to be made thin to obtain large capacitance. Chemical mechanical polishing of a layer (610) is made faster, and hence possibly...

05/01/14 - 20140117497 - Decoupling capacitors for integrated circuits
On-chip decoupling capacitors and methods for placing the same are disclosed in which designated spaces are created between the active circuits to insert designated capacitor cells. The designated capacitor cells may be placed in designated areas of the integrated circuit that are not simply spaces left empty by cell placement...

05/01/14 - 20140117498 - Self-aligned silicide bottom plate for edram applications by self-diffusing metal in cvd/ald metal process
In one aspect, a memory cell capacitor is provided. The memory cell capacitor includes a silicon wafer; at least one trench in the silicon wafer; a silicide within the trench that serves as a bottom electrode of the memory cell capacitor, wherein a contact resistance between the bottom electrode and...

05/01/14 - 20140117499 - Capacitor and semiconductor device using same
A capacitor for a semiconductor device includes a bottom electrode plate, an insulating layer formed on the bottom electrode plate, and a top electrode plate formed on the insulating layer. The bottom plate includes a capacitor well and at least one diffused region formed on the capacitor well. A doping...

05/01/14 - 20140117500 - Implementing decoupling devices inside a tsv dram stack
A method and structures are provided for implementing decoupling capacitors within a DRAM TSV stack. A DRAM is formed with a plurality of TSVs extending completely through the substrate and filled with a conducting material. A layer of glass is grown on both the top and bottom of the DRAM...

04/24/14 - 20140110823 - Contact structure
One or more techniques or systems for forming a contact structure for a deep trench capacitor (DTC) are provided herein. In some embodiments, a contact structure includes a substrate region, a first region, a second region, contact landings, a first trench region, a first landing region, and a second trench...

04/24/14 - 20140110824 - Semiconductor devices having hybrid capacitors and methods for fabricating the same
A semiconductor device includes a plurality of capacitors disposed on a substrate and a support pattern supporting upper portions and lower portions of the capacitors. Each of the capacitors includes a lower electrode, an upper electrode, and a dielectric layer between the lower and upper electrodes. The lower electrode includes...