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Including Capacitor Component

Including Capacitor Component patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

Related Categories:

Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Integrated Circuit Structure With Electrically Isolated Components > Passive Components In Ics > Including Capacitor Component



Semiconductor arrangment with capacitor
05/28/15 - 20150145100 - A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region, where the capacitor is over the semiconductor device. The semiconductor...

Semiconductor arrangement with capacitor
05/28/15 - 20150145101 - A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region. The semiconductor arrangement includes a protective ring within at least...

Methods for deep trench mim capacitor moat isolation with n+ epitaxial semiconductor wafer scheme
05/28/15 - 20150145102 - An integrated circuit structure provides at least one metal-insulator-metal (MIM) capacitor and a moat isolation structure wherein the number of processes required is substantially minimized and the formation of the MIM capacitor and the moat isolation structure effectively decouple while the number of processes common to the moat isolation structure...

Dram mim capacitor using non-noble electrodes
05/21/15 - 20150137315 - A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the...

Three dimensional integrated circuit capacitor
05/14/15 - 20150130023 - A three dimensional integrated circuit capacitor that includes a first conductive layer, a second conductive layer above the first conductive layer and a semiconductor layer above the second conductive layer. The semiconductor layer has an inter layer via (ILV) through the semiconductor layer. A third conductive layer is above the...

Embedded sheet capacitor
05/14/15 - 20150130024 - A multilayer capacitor is provided that includes a plurality of vias configured to receive interconnects from a die....

Mechanisms for forming metal-insulator-metal (mim) capacitor structure
05/07/15 - 20150123242 - Embodiments of mechanisms for forming a semiconductor device with metal-insulator-metal (MIM) capacitor structure are provided. The MIM capacitor structure includes a substrate; and a MIM capacitor formed on the substrate. The MIM capacitor includes a bottom electrode formed over the substrate. The bottom electrode is a top metal layer. The...

Semiconductor device
05/07/15 - 20150123243 - In a semiconductor device (SD), plate-shaped upper electrodes (UEL) are formed on a lower electrode (LEL) with a dielectric film (DEC) interposed therebetween. The lower electrode (LEL), the dielectric film (DEC), and the upper electrodes (UEL) constitute MIM capacitors (MCA). One of the upper electrodes (UEL) and another upper electrode...

Isolation device
04/30/15 - 20150115407 - In one embodiment, an isolation device has a substrate, a metal plate, a conductive layer, first and second isolation layers are disclosed. The conductive layer may be formed within the substrate. The conductive layer may be arranged coupled to the metal plate, so as to receive a capacitively coupled signal...

Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an f-ram process
04/30/15 - 20150115408 - An encapsulated ferroelectric capacitor or ferroelectric memory cell includes encapsulation materials adjacent to a ferroelectric capacitor, a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and an FEO encapsulation layer over the ferroelectric oxide to provide protection from hydrogen induced degradation....

Semiconductor module carrying the same
04/23/15 - 20150108604 - The electrical connecting terminals for power supply system and those for signal system are separately placed on both sides of a semiconductor chip. By the configuration to enlarging the permissible current value of a path through which a large current flows, stabilization of feeding supply currents, reduction of noises mixed...

Integrated circuit devices having through silicon via structures and methods of manufacturing the same
04/23/15 - 20150108605 - An integrated circuit device is provided. The integrated circuit device includes: a capacitor including an electrode formed in a first area on a substrate; a through-silicon-via (TSV) landing pad formed in a second area on the substrate, the TSV landing pad including the same material as the electrode; a multi-layered...

Electronic chip with means of protecting its back face
04/23/15 - 20150108606 - at least one second via or a trench passing through the back face of the substrate and a part of the thickness of the substrate, and facing the electronic circuit such that a bottom wall of the second via or of the trench are separated from the electronic circuit by...

Metal insulator metal capacitor and method for making the same
04/16/15 - 20150102459 - A semiconductor device includes one or more metal-insulator-metal (MiM) capacitors. The semiconductor device includes a bottom electrode, a dielectric layer located above, and in physical contact with, the bottom electrode, a top electrode located above, and in physical contact with, the dielectric layer, a first top contact contacting the top...

Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures
04/16/15 - 20150102460 - A semiconductor structure may include a first electrode over a substrate, a high-K dielectric material over the first electrode, and a second electrode over the high-K dielectric material, wherein at least one of the first electrode and the second electrode may include a material selected from the group consisting of...

Cost effective method of forming embedded dram capacitor
04/16/15 - 20150102461 - A high capacitance embedded metal interconnect capacitor and associated fabrication processes are disclosed for using a directional barrier metal formation sequence in a dual damascene copper process to form multi-layer stacked copper interconnect structure having reduced barrier metal layer formation at the bottom of each via hole so that the...

Semiconductor devices and methods for fabricating the same
04/16/15 - 20150102462 - A semiconductor device includes a substrate and a plurality of storage nodes on the substrate and extending in a vertical direction relative to the substrate. A lower support pattern is in contact with the storage nodes between a bottom and a top of the storage nodes, the lower support pattern...

Vertical noise reduction in 3d stacked semiconductor devices
04/02/15 - 20150091130 - A stacked three dimensional semiconductor device includes multiple thin substrates stacked over one another and over a base substrate. The thin substrates may include a thickness of about 0.1 μm. In some embodiments, a noise suppression tier is vertically interposed between active device tiers. In some embodiments, each tier includes...

Power distribution for 3d semiconductor package
04/02/15 - 20150091131 - A method including a printed circuit board electrically coupled to a bottom of a laminate substrate, the laminate substrate having an opening extending through the entire thickness of the laminate substrate, a main die electrically coupled to a top of the laminate substrate, a die stack electrically coupled to a...

Stiffener with embedded passive components
04/02/15 - 20150091132 - Systems and methods for preventing warpage of a semiconductor substrate in a semiconductor package. A continuous or uninterrupted stiffener structure is designed with a recessed groove, such that passive components, such as, high density capacitors are housed within the recessed groove. The stiffener structure with the recessed groove is attached...

Semiconductor device and method for fabricating the same
04/02/15 - 20150091133 - In a semiconductor device and in methods of formation thereof, a semiconductor device comprises a substrate, a lower electrode on the substrate, and a dielectric layer on the lower electrode. An adhesion layer is positioned on the dielectric layer and an upper electrode is positioned on the adhesion layer. The...

Atomic layer deposition
04/02/15 - 20150091134 - A method of depositing a material on a substrate using an atomic layer deposition process, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to the first deposition step, and a delay of at least one minute between the first deposition step and the second...

Semiconductor device and manufacturing method thereof
03/26/15 - 20150084159 - The present invention is capable of suppressing a variation in the characteristics of a semiconductor device. In a conductor pattern CPA and a conductor pattern CPB arranged so as to run side by side with each other, the conductor pattern CPA is divided into a first portion P1 (A) and...

Semiconductor device and method of manufacturing the same
03/26/15 - 20150084160 - A ferroelectric capacitor formed above a semiconductor substrate includes a lower electrode, a dielectric film (ferroelectric film) having ferroelectric characteristics, and an upper electrode. The upper electrode includes a conductive oxide film made of a ferroelectric material to which conductivity is provided by adding a conductive material such as Ir,...

Method for manufacturing semiconductor device and semiconductor device
03/19/15 - 20150076657 - A novel method for manufacturing a semiconductor device and a semiconductor device are provided. The semiconductor device includes a substrate, a trench capacitor, a contact pad, an inter-layer dielectric (ILD) layer and contact elements. The trench capacitor includes a doped region, a first dielectric layer, a bottom electrode, a second...

Semiconductor device including capacitor and method of manufacturing the same
03/19/15 - 20150076658 - A semiconductor device includes a lower electrode including at least one of a noble metal and a conductive noble metal oxide, a dielectric layer disposed on the lower electrode and including titanium oxide, a protection insulating layer disposed on the dielectric layer and including tantalum oxide and a barrier oxide,...

Capacitor
03/19/15 - 20150076659 - A capacitor having a configuration in which capacitors are coupled in series to each other is described. The capacitor formed on a substrate according to an exemplary embodiment of the present invention includes: a polysilicon layer doped with an impurity; a first insulation layer formed on the polysilicon layer; a...

Capacitor structure and stack-type capacitor structure
03/12/15 - 20150069573 - A capacitor structure is provided, which includes a conductive substrate, a first dielectric layer, and a first metal layer. The conductive substrate includes a first surface and at least one first concave located on the first surface. The first dielectric layer covers the first surface and the first concave. The...

Metal oxide semiconductor (mos) capacitor with improved linearity
03/05/15 - 20150061071 - A MOS capacitor with improved linearity is disclosed. In an exemplary embodiment, an apparatus includes a main branch comprising a first signal path having a first capacitor pair connected in series with reversed polarities and a second signal path having a second capacitor pair connected in series with reversed polarities,...

Variable capacitance integrated circuit
03/05/15 - 20150061072 - A variable capacitance semiconductor structure is disclosed. Embodiments include a capacitor having three plates, a top plate, a middle plate, and a bottom plate. The top plate serves as a positive plate. The middle and bottom plates serve as ground plates for the capacitor. A switching circuit selects between the...

Semiconductor device comprising capacitor and method of manufacturing the same
03/05/15 - 20150061073 - A semiconductor device includes an interlayer dielectric layer on a substrate, the interlayer dielectric layer having an upper surface, a lower plug extending down into the interlayer dielectric layer from the upper surface of the interlayer dielectric layer, the lower plug having an upper surface, a first dielectric layer pattern...

Mim capacitors with diffusion-blocking electrode structures and semiconductor devices including the same
03/05/15 - 20150061074 - A semiconductor device includes a MIM capacitor on a substrate. The MIM capacitor includes a dielectric region and first and second electrodes on opposite sides of the dielectric region. At least one of the first and second electrodes, e.g., an upper electrode, includes an oxygen diffusion blocking material, e.g., oxygen...

Metal trench de-coupling capacitor structure and method for forming the same
03/05/15 - 20150061075 - A metal trench de-coupling capacitor structure includes a vertical trench disposed in a substrate, an insulating layer deposited on the sidewall of the vertical trench, an inter-layer dielectric layer covering the substrate and the insulating layer, and a metal layer penetrating the interlayer dielectric layer to fill up the vertical...

Method and system for a metal finger capacitor with a triplet repeating sequence incorporating a metal underpass
02/26/15 - 20150054126 - Methods and systems for a metal finger capacitor with a triplet repeating sequence incorporating a metal underpass may comprise repeating triplet capacitors integrated on a semiconductor die. The capacitors may comprise a first set of interconnected metal fingers comprising a first terminal of a first capacitor, a second set of...

Multi-material structures, semiconductor constructions and methods of forming capacitors
02/26/15 - 20150054127 - Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of...

Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
02/26/15 - 20150054128 - The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode...

Semiconductor device with pads of enhanced moisture blocking ability
02/26/15 - 20150054129 - A semiconductor device is provided having a pad with an improved moisture blocking ability. The semiconductor device has: a circuit portion including a plurality of semiconductor elements formed on a semiconductor substrate; lamination of insulator covering the circuit portion, including a passivation film as an uppermost layer having openings; ferro-electric...

Semiconductor capacitor
02/19/15 - 20150048482 - A semiconductor capacitor is includes a substrate, a plurality of odd layers formed on the substrate, and a plurality of even layers formed on the substrate. Each odd layer includes a plurality of first odd fingers and a first odd terminal electrically connected thereto, and a plurality of second odd...

Semiconductor structures and methods of forming the same
02/19/15 - 20150048483 - A metal insulator metal (MIM) capacitor includes a base layer and a copper bulk layer in the base layer. The MIM capacitor further includes an etch stop layer over the base layer and the copper bulk layer and an oxide-based dielectric layer over the etch stop layer. The MIM capacitor...

Multi-die fine grain integrated voltage regulation
02/12/15 - 20150041955 - A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device may include one or more current consuming elements. A passive device may be coupled to the power consuming device. The passive device may include a plurality of passive elements...

Method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof
02/05/15 - 20150035117 - Aspects of the present invention relate to method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof. Various embodiments include a method for reducing lateral extrusion formed in semiconductor structures. The method can include removing a portion of a first lateral extrusion in an aluminum layer...

Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
02/05/15 - 20150035118 - The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode...

Nanoparticles for making supercapacitor and diode structures
01/29/15 - 20150028449 - Structures and methods of making a supercapacitor may include a first electrode comprising a first conductive plate and a 3-dimensional (3D) aggregate of sintered nanoparticles electrically connected one to another and to the first conductive plate. The supercapacitor may also include a dielectric formed on surfaces of the 3D aggregate...

Integrated circuit device including through-silicon via structure and decoupling capacitor and method of manufacturing the same
01/29/15 - 20150028450 - An integrated circuit device is provided which includes a through-silicon via (TSV) structure and one or more decoupling capacitors, along with a method of manufacturing the same. The integrated circuit device may include a semiconductor structure including a semiconductor substrate, a TSV structure passing through the semiconductor substrate, and a...

Semiconductor device and method of designing the same
01/29/15 - 20150028451 - A semiconductor device includes: a semiconductor substrate having a memory cell array region and a peripheral circuit region; a ferroelectric capacitor formed over the semiconductor substrate in the memory cell array region; and a dummy capacitor formed over the semiconductor substrate in the peripheral circuit region, with a layered structure...

Complementary back end of line (beol) capacitor
01/29/15 - 20150028452 - A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes a lower interconnect layer of...

Metal-insulator-metal (mim) capacitor with deep trench (dt) structure and method in a silicon-on-insulator (soi)
01/22/15 - 20150021737 - A structure forming a metal-insulator-metal (MIM) trench capacitor is disclosed. The structure comprises a multi-layer substrate having a metal layer and at least one dielectric layer. A trench is etched into the substrate, passing through the metal layer. The trench is lined with a metal material that is in contact...

Thick conductive stack plating process with fine critical dimension feature size for compact passive on glass technology
01/15/15 - 20150014812 - An integrated circuit device includes a substrate, and a first interlayer dielectric layer on the substrate that includes a first conductive layer and a second conductive layer. The integrated circuit device also includes a first conductive stack including a third conductive layer coupled to a portion of the second conductive...

Complex circuit element and capacitor utilizing cmos compatible antiferroelectric high-k materials
01/15/15 - 20150014813 - The present disclosure provides integrated circuit elements and MIM/MIS capacitors having high capacitance and methods of forming according integrated circuit elements and integrated MIM/MIS capacitors and methods of controlling an integrated circuit element and an integrated MIM/MIS capacitor. In various aspects, a substrate is provided and a dielectric layer or...

Metal trench capacitor and improved isolation and methods of manufacture
01/15/15 - 20150014814 - A high-k dielectric metal trench capacitor and improved isolation and methods of manufacturing the same is provided. The method includes forming at least one deep trench in a substrate, and filling the deep trench with sacrificial fill material and a poly material. The method further includes continuing with CMOS processes,...

High dielectric constant transition metal oxide materials
01/01/15 - 20150001673 - A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium...

Capacitors having dielectric regions that include multiple metal oxide-comprising materials
01/01/15 - 20150001674 - Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various...

Method for including decoupling capacitors into semiconductor circuit having logic circuit therein and semiconductor circuit thereof
01/01/15 - 20150001675 - A semiconductor circuit comprises a first and a second logic circuit, a first and a second decoupling capacitor. The first decoupling capacitor is arranged in a first area around the first logic circuit and the second decoupling capacitor is arranged in a second area around the second logic circuit. Wherein,...

Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
01/01/15 - 20150001676 - MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes....

Integrated circuits with on-die decoupling capacitors
12/25/14 - 20140374877 - An integrated circuit includes a decoupling capacitor and an internal circuit. The decoupling capacitor is coupled to a first external terminal of the integrated circuit. The internal circuit in the integrated circuit is coupled to a second external terminal of the integrated circuit. The decoupling capacitor is coupled to provide...

Memory cell with integrated iii-v device
12/25/14 - 20140374878 - A method including forming an oxide layer on a top of a substrate; forming a deep trench capacitor in the substrate; bonding a III-V compound semiconductor to a top surface of the oxide layer; and forming a III-V device in the III-V compound semiconductor....

Integrated circuit with backside structures to reduce substrate wrap
12/25/14 - 20140374879 - Wafer bowing induced by deep trench capacitors is ameliorated by structures formed on the reverse side of the wafer. The structures on the reverse side include tensile films. The films can be formed within trenches on the back side of the wafer, which enhances their effect. In some embodiments, the...

Deep trench capacitor
12/25/14 - 20140374880 - The present disclosure relates to a method of forming a capacitor structure, including depositing a plurality of first polysilicon (POLY) layers of uniform thickness separated by a plurality of oxide/nitride/oxide (ONO) layers over a bottom and sidewalls of a recess and substrate surface. A second POLY layer is deposited over...

Concentric capacitor structure
12/25/14 - 20140374881 - A concentric capacitor structure generally comprising concentric capacitors is disclosed. Each concentric capacitor comprises a first plurality of perimeter plates formed on a first layer of a substrate and a second plurality of perimeter plates formed on a second layer of the substrate. The first plurality of perimeter plates extend...

Metal capacitor with inner first terminal and outer second terminal
12/18/14 - 20140367827 - A metal capacitor with an inner first terminal (e.g., a positive terminal) and an outer second terminal (e.g., a negative terminal) is disclosed herein. In an exemplary design, an apparatus (e.g., an IC chip) includes a first conductive line for a first terminal of a capacitor and at least one...

Process for producing a through-silicon via and a through-silicon capacitor in a substrate, and corresponding device
12/18/14 - 20140367828 - A device includes a substrate and an integrated-circuit interconnect on a first side. A capacitor passes through the substrate possessing a first electrode having a first contact face electrically coupled to a first electrically conductive zone placed on a second side of the substrate and a second electrode electrically coupled...

Semiconductor devices including capacitors
12/11/14 - 20140361403 - A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second...

Capacitor structure
12/11/14 - 20140361404 - One or more embodiments relate to a semiconductor device, comprising: A semiconductor device, comprising: a semiconductor substrate; a plurality of first conductive vias, the first conductive vias electrically coupled together, each of the first conductive vias passing through the substrate; and a plurality of second conductive vias, the second conductive...

Hybrid semiconductor package
11/27/14 - 20140346637 - A semiconductor package includes a substrate, an RF semiconductor die attached to a first side of the substrate, a capacitor attached to the first side of the substrate, and a first terminal on the first side of the substrate. The semiconductor package further includes copper or aluminum bonding wires or...

Composite reconstituted wafer structures
11/13/14 - 20140332926 - A reconstituted electronic device comprising at least one die and at least one passive component. A functional material is incorporated in the substrate of the device to modify the electrical behaviour of the passive component. The passive component may be formed in redistribution layers of the device. Composite functional materials...

Integrated switchable capacitive device
10/30/14 - 20140319653 - An integrated circuit includes a substrate. A fixed main capacitor electrode is disposed in a metal layer overlying the substrate. A second main capacitor electrode is disposed in a metal layer and spaced from the fixed main capacitor electrode. A movable capacitor electrode is disposed adjacent the fixed main capacitor...

Stacked capacitor structure and a fabricating method for fabricating the same
10/23/14 - 20140312460 - A stacked capacitor structure of the instant disclosure comprises a substrate and a plurality of stacked capacitors. The substrate has an insulating layer formed thereon and a plurality of contact plugs in the insulating layer, wherein the contact plugs are exposed on the upper surface of the insulating layer. Specially,...

Semiconductor device and method for manufacturing the same
10/09/14 - 20140299965 - After the formation of a first interlayer insulating, an etching stopper film made of SiON is formed thereon. Subsequently, a contact hole extending from the upper surface of the etching stopper film and reaching a high concentration impurity region is formed, and a first plug is formed by filling W...

Hermetic packaging of integrated circuit components
10/09/14 - 20140299966 - A method for forming an integrated circuit includes transforming at least a portion of a first substrate layer to form a conductive region within the first substrate layer. An integrated circuit device is provided proximate an outer surface of the first substrate layer. The integrated circuit device transmits or receives...

Semiconductor structures with metal lines
10/02/14 - 20140291802 - Disclosed are semiconductor structures with metal lines and methods of manufacture which reduce or eliminate extrusion formation. The method includes forming a metal wiring comprising a layered structure of metal materials with an upper constraining layer. The method further includes forming a film on the metal wiring which prevents metal...

Capacitor structure of gate driver in panel
10/02/14 - 20140291803 - A capacitor structure of gate driver in panel (GIP) includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a first and second transparent capacitor electrode layers. The first dielectric layer covers the first metal layer. The second metal layer is disposed on...

Semiconductor devices having balancing capacitor and methods of forming the same
10/02/14 - 20140291804 - A semiconductor memory device includes a substrate including cell block, a balancing block, and a sense block. A plurality of cell bit lines are formed in the cell block of. A plurality of cell plugs are formed adjacent to side surfaces of the bit lines. Cell inner spacers, air spacers,...

Semiconductor device containing mim capacitor and fabrication method
10/02/14 - 20140291805 - A semiconductor device containing an MIM capacitor and its fabrication method are provided. A metal-insulator-metal (MIM) capacitor is formed on a first interlayer dielectric layer covering a substrate. The MIM capacitor includes a bottom electrode layer and a top electrode layer that are isolated from and laterally staggered with one...

Capacitor arrays for minimizing gradient effects and methods of forming the same
10/02/14 - 20140291806 - Semiconductor devices having capacitor arrays. A semiconductor device is formed including a capacitor array formed in a plurality of cells in a two-dimensional grid. The capacitor array includes a plurality of operational capacitors formed in a first subset of the plurality of cells along a diagonal of the capacitor array....

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