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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Integrated Circuit Structure With Electrically Isolated Components > Passive Components In Ics > Including Capacitor Component

Including Capacitor Component

Including Capacitor Component patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

04/17/14 - 20140103488 - Pop structures and methods of forming the same
A device includes a top package bonded to a bottom package. The bottom package includes a molding material, a device die molded in the molding material, a Through Assembly Via (TAV) penetrating through the molding material, and a redistribution line over the device die. The top package includes a discrete...

04/17/14 - 20140103489 - Electronic device comprising a semiconductor structure having an integrated circuit back end capacitor and thin film resistor and method of manufacturing the same
An electronic device comprising a semiconductor structure having an integrated circuit back end capacitor and an integrated circuit back end thin film resistor and a method of manufacturing the same is provided. The semiconductor structure comprises a first dielectric layer, a bottom plate of the capacitor and a thin film...

04/17/14 - 20140103490 - Metal-oxide-metal capacitor structure
A capacitor from a Metal-Oxide-Metal (“MoM”) process may include a plurality of metal layers arranged with different design structures. The metal layers may be connected with vias. The metal layers may include wires, such as rows and/or fingers that are arranged for maximizing capacitance between adjacent fingers, as well as...

04/17/14 - 20140103491 - Semiconductor devices
The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may...

04/10/14 - 20140097516 - High-voltage integrated metal capacitor and fabrication method
A high-voltage metal capacitor with easy integration into existing semiconductor manufacturing processes can provide isolation capacitors up to several kilovolts. The capacitor includes a support layer with internal structure, including a lower place, a bond pad on the support layer, an upper plate disposed on the support layer, the upper...

04/03/14 - 20140091428 - Land side and die side cavities to reduce package z-height
A package structure including a capacitor mounted within a cavity in the package substrate is disclosed. The package structure may additionally include a die mounted to a die side surface of the package substrate, and the opposing land side surface of the package substrate may be mounted to a printed...

04/03/14 - 20140091429 - Multilayer dielectric memory device
A memory device has multiple dielectric barrier regions. A memory device has multiple barrier regions that provide higher or lower current-voltage slope compared to a memory device having a single barrier region. The device also has electrode regions that provide further control over the current-voltage relationship....

04/03/14 - 20140091430 - Semiconductor device including operative capacitors and dummy capacitors
The semiconductor device according to the present invention comprises a plurality of actually operative capacitors formed, arranged in an actually operative capacitor part over a semiconductor substrate and each including a lower electrode, a ferroelectric film and an upper electrode; a plurality of dummy capacitors formed, arranged in a dummy...

04/03/14 - 20140091431 - Semiconductor device
A semiconductor device manufacturing method includes forming a first capacitance film formed on the lower electrode; forming an intermediate electrode in a first region on the first capacitance film, wherein the first capacitance is interposed between the intermediate electrode and the lower electrode; forming a second capacitance film on the...

04/03/14 - 20140091432 - Ceramic powder, semiconductor ceramic capacitor, and method for manufacturing same
A ceramic powder for use in a grain boundary insulated semiconductor ceramic that has an excellent ESD withstanding voltage, a semiconductor ceramic capacitor using the ceramic powder, and a manufacturing method therefor. The ceramic powder for use in a SrTiO3 based grain boundary insulated semiconductor ceramic has a specific surface...

03/27/14 - 20140084416 - Stacked package and method of manufacturing the same
A stacked package includes a first package substrate having a major surface that defines a horizontal plane, first pads on an upper portion of the first package substrate, a multilayer capacitor on the first pads, and a first semiconductor chip on the first package substrate. A second package substrate is...

03/27/14 - 20140084417 - Metal-insulator-metal (mim) capacitor
There is disclosed a metal-insulator-metal, MIM, capacitor. The MIM capacitor comprises a MIM stack formed within an interconnect metal layer. The interconnect metal layer is utilised as an electrical connection to a metal layer of the MIM stack....

03/27/14 - 20140084418 - Lateral epitaxial grown soi in deep trench structures and methods of manufacture
Deep trench capacitor structures and methods of manufacture are disclosed. The method includes forming a deep trench structure in a wafer including a substrate, buried oxide layer (BOX) and silicon (SOI) film. The structure includes a wafer including a substrate, buried insulator layer and a layer of silicon on insulator...

03/27/14 - 20140084419 - Capacitor structure
A DRAM capacitor structure is disposed on the interior surface of a vertical hollow cylinder of a support structure overlying a semiconductor substrate. The support structure further includes a horizontal supporting layer that is integrally connected with the vertical hollow cylinder. A fabrication method for forming the DRAM capacitor structure...

03/20/14 - 20140077336 - Leakage reduction in dram mim capacitors
A method for forming a DRAM MIM capacitor stack having low leakage current involves the use of a first electrode that serves as a template for promoting the high-k phase of a subsequently deposited dielectric layer. The high-k dielectric layer includes a doped material that can be crystallized after a...

03/20/14 - 20140077337 - High temperature ald process for metal oxide for dram applications
A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive metal oxide formed using a high temperature, low pressure ALD process. The high temperature ALD process results in a layer with enhanced crystallinity, higher density, reduced shrinkage, and lower carbon...

03/13/14 - 20140070366 - Semiconductor structure
A semiconductor structure is provided. The semiconductor structure includes a floating substrate; and a capacitor grounded and connected to the floating substrate. A method of manufacturing a semiconductor structure is also provided....

03/13/14 - 20140070367 - Semiconductor device
According to one embodiment, the semiconductor device according to the embodiment of the present disclosure is provided with a first semiconductor layer, a second semiconductor layer, a ninth semiconductor layer formed on the second semiconductor layer, a third semiconductor layer, a first region enclosed with the third semiconductor layer, a...

03/13/14 - 20140070368 - Semiconductor device
A semiconductor device includes a semiconductor chip, an interposer, a surface circuit pattern, and a post array. The surface circuit pattern is formed on one surface of the interposer and includes chip side pads connected to an external connection pad of the semiconductor chip, junction pads, and interconnecting lines having...

03/06/14 - 20140061855 - Capacitor structure and fabricating method thereof
A capacitor structure includes a first conductive structure, a dielectric structure, a first capacitor electrode, a capacitor dielectric layer, and a second capacitor electrode. The first conductive structure is disposed over a substrate. The dielectric structure is disposed over the substrate and partially enclosing the first conductive structure. The dielectric...

03/06/14 - 20140061856 - Semiconductor device, high-frequency transmitter and semiconductor production method
A semiconductor device has a silicon substrate, a shield which is disposed on the silicon substrate and comprises a conductive material, a capacitor electrode disposed on the shield, and at least one pillar member which is provided between the shield and the silicon substrate and comprises a conductive material. The...

02/27/14 - 20140054745 - Memory cell support lattice
Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is...

02/20/14 - 20140048907 - Power tsvs of semiconductor device
A semiconductor device including power TSVs for stably supplying a power source is described. A semiconductor device includes a chip power pad placed in a first region of a chip, power through silicon vias (TSVs) connected to the chip power pad and placed in the second region of each of...

02/13/14 - 20140042590 - Metal-insulator-metal capacitor and method of fabricating
Methods and apparatus are disclosed for manufacturing metal-insulator-metal (MIM) capacitors. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, which has a bottle neck. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, in contact with a sidewall...

02/13/14 - 20140042591 - Capacitor arrangements and method for manufacturing a capacitor arrangement
In various embodiments, a capacitor arrangement is provided, which may include a substrate; a plurality of first doped regions and a plurality of second doped regions, wherein the first doped regions are doped with dopants of a first conductivity type and the second doped regions are doped with dopants of...

02/06/14 - 20140035098 - Solid-state supercapacitor
Embodiments of the present disclosure relate to a solid-state supercapacitor. The solid-state supercapacitor includes a first electrode, a second electrode, and a solid-state ionogel structure between the first electrode and the second electrode. The solid-state ionogel structure prevents direct electrical contact between the first electrode and the second electrode. Further,...

02/06/14 - 20140035099 - Integrated circuits with metal-insulator-metal (mim) capacitors and methods for fabricating same
Integrated circuits with metal-insulator-metal (MIM) capacitors and methods for fabricating such integrated circuits are provided. In an embodiment, an integrated circuit includes a dielectric material layer overlying a semiconductor substrate. A surface conditioning layer overlies the dielectric material layer. Further, a metal layer is formed directly on the surface conditioning...

02/06/14 - 20140035100 - Planar interdigitated capacitor structures and methods of forming the same
A planar interdigitated capacitor structure, methods of forming, and devices including, the same. The device includes first and second planar electrode structures including respective first and second pluralities of planar continuous rectangular plate electrode elements formed above a semiconductor substrate and extending continuously in first and second orthogonal directions substantially...

02/06/14 - 20140035101 - Dielectrics containing at least one of a refractory metal or a non-refractory metal
Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of electronic systems and devices. Embodiments can include electronic apparatus and methods of forming the electronic apparatus having a tantalum aluminum...

01/30/14 - 20140027881 - Electric charge flow element
An electric charge flow element including, on an insulating support, a stack of a first electrode, of a dielectric layer having at least one portion capable of letting charges flow by tunnel effect, and of a second electrode, wherein at least one of the electrodes is made of undoped polysilicon....

01/30/14 - 20140027882 - Semiconductor device and method for manufacturing semiconductor device
In a semiconductor device including a digital circuit portion and an analog circuit portion having a capacitor portion provided over a substrate, the capacitor portion is provided with a first wiring, a second wiring and a plurality of blocks each having a plurality of capacitor elements. Further, each the plurality...

01/23/14 - 20140021583 - Package structures including a capacitor and methods of forming the same
A package includes a die, an encapsulant, and a capacitor. The package has a package first side and a package second side. The die has a die first side corresponding to the package first side, and has a die second side corresponding to the package second side. The die first...

01/23/14 - 20140021584 - Process-compatible decoupling capacitor and method for making the same
Provided is decoupling capacitor device. The decoupling capacitor device includes a first dielectric layer portion that is deposited in a deposition process that also deposits a second dielectric layer portion for a non-volatile memory cell. Both portions are patterned using a single mask. A system-on-chip (SOC) device is also provided,...

01/23/14 - 20140021585 - Creating deep trenches on underlying substrate
A semiconductor structure and method of fabricating the same are disclosed. In an embodiment, the structure includes a first substrate having a buried plate or plates in the substrate. Each buried plate includes at least one buried plate contact, and a plurality of deep trench capacitors disposed about the at...

01/23/14 - 20140021586 - Method for manufacturing a polycrystalline dielectric layer
A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline growth of a dielectric metallic oxide on one of the metallic electrodes. At least one polycrystalline growth condition of the dielectric oxide is modified during the formation of the...

01/16/14 - 20140015097 - Multi-material structures, semiconductor constructions and methods of forming capacitors
Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of...

01/16/14 - 20140015098 - Method for fabricating solder columns for a column grid array package
A method for fabricating an electronic device package having a column grid array is disclosed. A column grid array package includes a substrate, an integrated circuit located on a first side of the substrate, and a set of solder columns located on a second side of the substrate. The column...

01/16/14 - 20140015099 - Semiconductor device and method for fabricating the same
A semiconductor device and a method for fabricating the same are disclosed, which can form a nitride floating capacitor (NFC) serving as a support structure in the form of a multi-layer structure, thereby preventing a storage node from leaning. The semiconductor device includes a plurality of storage nodes formed over...

01/16/14 - 20140015100 - Method of fabricating semiconductor device
The method includes forming a metal interconnection layer and a first interlayer insulating layer on a semiconductor substrate, forming a reservoir capacitor region by etching the first interlayer insulating layer to expose the metal interconnection layer, forming a barrier metal layer on the reservoir capacitor region, forming a sacrificial insulating...

01/16/14 - 20140015101 - Semiconductor structures having a metal-insulator-metal capacitor structure
A semiconductor structure includes a through-substrate-via (TSV) structure disposed in a substrate. A metal-insulator-metal (MIM) capacitor structure is disposed over the substrate. A dual damascene structure disposed over and electrically coupled with the TSV structure, wherein the dual damascene structure includes a via portion and a trench portion A first...

01/09/14 - 20140008761 - High density capacitors utilizing thin film semiconductor layers
The present invention generally relates to a capacitor. By utilizing a semiconductor material between two electrodes, the storage capacity of the capacitor is increased as compared to a metal-insulator-metal capacitor....

01/09/14 - 20140008762 - Semiconductor structure
A semiconductor structure includes a first capacitor and a second capacitor. The first capacitor includes a plurality of first units and each first unit includes a plurality of first finger electrodes. The second capacitor includes a plurality of second units and each second unit includes a plurality of second finger...

12/19/13 - 20130334657 - Planar interdigitated capacitor structures and methods of forming the same
A planar interdigitated capacitor structure, methods of forming, and devices including, the same. The device includes first and second planar electrode structures including respective first and second pluralities of planar continuous rectangular plate electrode elements formed above a semiconductor substrate and extending continuously in first and second orthogonal directions substantially...

12/19/13 - 20130334658 - Method and system for improved matching for on-chip capacitors
Methods and systems for improved matching of on-chip capacitors may comprise a semiconductor die with an on-chip capacitor comprising one or more metal layers. The on-chip capacitor may comprise interdigitated electrically coupled metal fingers. The electrically coupled metal fingers may be arranged symmetrically in the semiconductor die to compensate for...

12/19/13 - 20130334659 - Multiple depth vias in an integrated circuit
An integrated circuit with vias with different depths stopping on etch stop layers with different thicknesses. A method of simultaneously etching vias with different depths without causing etch damage to the material being contacted by the vias....

12/19/13 - 20130334660 - Capacitor structure
One or more embodiments relate to a semiconductor device, comprising: a substrate; and a plurality of first conductive vias, the first conductive vias electrically coupled together, each of the first conductive vias passing through the substrate; and a plurality of second conductive vias, the second conductive vias electrically coupled together,...

12/19/13 - 20130334661 - Semiconductor device, manufacturing method of the semiconductor device
A two-layered polysilicon capacitive element is manufactured to enable suppression of both of an increase in the applied electric field dependence of the capacitance value and the initial defect of the dielectric film. Included are a lower electrode into which phosphorous ions are implanted, a dielectric film formed on the...

12/12/13 - 20130328167 - Self-aligned metal-insulator-metal (mim) capacitor
A metal-insulator-metal (MIM) capacitor structure integrated within a back-end-of-the-line (BEOL) structure is provided. The MIM capacitor structure includes a lower electrode, i.e., a first conductive material, embedded within a dielectric material of the BEOL structure, a dielectric material liner having a dielectric constant of equal to, or greater than, silicon...

12/12/13 - 20130328168 - Manufacturable high-k dram mim capacitor structure
A method for forming a capacitor stack is described. In some embodiments of the present invention, a first dielectric material is formed above a first electrode material. The first electrode material is rigid and has good mechanical strength and serves as a robust frame for the capacitor stack. The first...

12/05/13 - 20130320493 - Capacitor for interposers and methods of manufacture thereof
Capacitor designs for substrates, such as interposers, and methods of manufacture thereof are disclosed. A through via is formed in the interposer, and a capacitor is formed between a lower level metallization layer and a higher level metallization layer. The capacitor may be, for example, a planar capacitor with dual...

12/05/13 - 20130320494 - Metal finger capacitors with hybrid metal finger orientations in stack with unidirectional metal layers
A semiconductor die having a plurality of metal layers, including a set of metal layers having a preferred direction for minimum feature size. The set of metal layers are such that adjacent metal layers have preferred directions orthogonal to one another. Finger capacitors formed in the set of metal layers...

12/05/13 - 20130320495 - Integration of non-noble dram electrode
A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material....

12/05/13 - 20130320496 - Semiconductor device
A semiconductor device includes: a die pad comprised of a metal, and having at least one cutout portion in its peripheral edge portion, and a protruding portion formed by the cutout portion so as to protrude laterally from the peripheral edge portion; an inner lead having at its end a...