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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Integrated Circuit Structure With Electrically Isolated Components > Passive Components In Ics > Including Programmable Passive Component (e.g., Fuse) Including Programmable Passive Component (e.g., Fuse)Including Programmable Passive Component (e.g., Fuse) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/31/08 - 20080023789 - Reprogrammable electrical fuse The present invention provides a reprogrammable electrically blowable fuse. The electrically blowable fuse is programmed using an electro-migration effect and is reprogrammed using a reverse electro-migration effect. The state (i.e., “opened” or “closed”) of the electrically blowable fuse is determined by a sensing system which compares a resistance of the ... 12/06/07 - 20070278615 - Resistance-change-type fuse circuit A resistance-change-type fuse circuit has a plurality of polysilicon fuses which are made of polysilicon and causes irreversible change in resistance by flowing a current; a plurality of programming transistors which are provided corresponding to the plurality of fuses, each programming transistor switching whether to flow the current through the ... 11/15/07 - 20070262413 - E-fuse and method for fabricating e-fuses integrating polysilicon resistor masks An E-fuse and a method for fabricating an E-fuse are provided integrating polysilicon resistor masks. The E-fuse includes a polysilicon layer defining a fuse shape including a cathode, an anode, and a fuse neck connected between the cathode and the anode silicide formation. A silicide formation is formed on the ... 11/01/07 - 20070252237 - Devices and methods for constructing electrically programmable integrated fuses for low power applications Electrically programmable integrated fuses are provided for low power applications. Integrated fuse devices have stacked structures with a polysilicon layer and a conductive layer formed on the polysilicon layer. The integrated fuses have structural features that enable the fuses to be reliably and efficiently programmed using low programming currents/voltages, while ... 10/25/07 - 20070246796 - Semiconductor device with improved contact fuse One aspect of the invention provides an integrated circuit (IC). The IC comprises transistors and contact fuses. The contact fuses each comprise a conducting layer, a frustum-shaped contact has a narrower end that contacts the conducting layer and a first metal layer that is located over the conducting layer. A ... 09/27/07 - 20070222029 - Semiconductor device having a fuse element A portion to be melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown ... 09/27/07 - 20070222027 - Electronic fuse elements with constricted neck regions that support reliable fuse blowing Integrated circuit devices include a substrate and a fuse element on the substrate. The fuse element includes a metal pattern (e.g., dumbell-shaped) having a neck region therein that is sufficiently constricted to enable complete rupture of the neck region when the metal pattern in the fuse element is blown. A ... 09/13/07 - 20070210413 - Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabrication thereof Electrically programmable fuse structures and methods of fabrication thereof are presented, wherein a fuse includes first and second terminal portions interconnected by an elongate fuse element. The first terminal portion has a maximum width greater than a maximum width of the fuse element, and the fuse includes a narrowed width ... 09/13/07 - 20070210412 - Electrically programmable pi-shaped fuse structures and methods of fabrication thereof Electrically programmable fuse structures for an integrated circuit and methods of fabrication thereof are presented, wherein the electrically programmable fuse has a first terminal portion and a second terminal portion interconnected by a fuse element. The first terminal portion and the second terminal portion reside over a first support and ... 09/13/07 - 20070210411 - Electrically programmable fuse structures with terminal portions residing at different heights, and methods of fabrication thereof Electrically programmable fuse structures for an integrated circuit and methods of fabrication thereof are presented, wherein the electrically programmable fuse has a first terminal portion and a second terminal portion interconnected by a fuse element. The first terminal portion and the second terminal portion reside at different heights relative to ... 08/09/07 - 20070181967 - Semiconductor device with visible indicator and method of fabricating the same A semiconductor device may include a fuse pattern and an interconnection pattern formed on a surface of a semiconductor substrate. An interlayer dielectric layer may be disposed on the surface of the semiconductor substrate including the fuse pattern and the interconnection pattern. A bonding pad may be formed over the ... 08/02/07 - 20070176258 - Method of manufacturing semiconductor device including bonding pad and fuse elements A method of manufacturing a semiconductor device includes forming a first insulating film supported by a semiconductor substrate, forming an aluminum layer supported by the first insulating film, etching the aluminum layer to form a bonding pad and fuse elements, depositing by plasma chemical vapor deposition a second insulating film ... 08/02/07 - 20070176257 - Semiconductor device including fuse elements and bonding pad A semiconductor device includes a lower-layer substrate, a fuse above the lower-layer substrate and blown by radiation with light, a silicon oxide film on the fuse and on an exposed portion of the surface of the lower-layer substrate, and a silicon nitride film on the silicon oxide film. The portion ... 08/02/07 - 20070176255 - Integrated circuit arrangement An integrated circuit arrangement comprises at least one one-time programmable storage element, which can be electrically deactivated, having at least one electrically conductive or semi-conductive nanotube or at least one electrically conductive or semi-conductive nanowire. ... 07/19/07 - 20070164394 - Semiconductor device On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed therebetween. The reflector layer of copper is covered with a silicon oxide film and thereon a ... 07/12/07 - 20070158781 - Electrical fuses comprising thin film transistors (tfts), and methods for programming same The present invention relates to electrical fuses that each comprises at least one thin film transistor. In one embodiment, the electrical fuse of the present invention comprises a hydrogenated thin film transistor with an adjacent heating element. Programming of such an electrical fuse can be effectuated by heating the hydrogenated ... 06/07/07 - 20070126077 - Semiconductor device and method of manufacturing the same A semiconductor device includes an interlayer insulating film on a substrate. A runner part includes a plurality of runner lines spaced apart from each other by a regular interval under the interlayer insulating film. A fuse cut part includes a plurality of fuse lines spaced apart from each other by ... 05/31/07 - 20070120218 - Cmos compatible shallow-trench efuse structure and method A semiconductor structure including at least one e-fuse embedded within a trench that is located in a semiconductor substrate (bulk or semiconductor-on-insulator) is provided. In accordance with the present invention, the e-fuse is in electrical contact with a dopant region that is located within the semiconductor substrate. The present invention ... 05/24/07 - 20070114635 - Integrated circuit devices having corrosion resistant fuse regions and methods of fabricating the same Integrated circuit devices are provided including an integrated circuit substrate and first through fourth spaced apart lower interconnects on the integrated circuit substrate. The third and fourth spaced apart lower interconnects are parallel to the first and second lower interconnects. A first fuse is provided on the first and second ... 05/17/07 - 20070108550 - Semiconductor device and method of fabricating the same The semiconductor device has a semiconductor substrate; an electric fuse provided on the semiconductor substrate, and having a first fuse link and a second fuse link connected in series; and a terminal provided between the first fuse link and the second fuse link, wherein the first fuse link and the ... 05/17/07 - 20070108549 - Semiconductor structure A semiconductor structure is disclosed. The semiconductor structure includes a substrate, a bond pad, a fuse structure and a protection layer. The substrate has a pad region and a fuse region. The bond pads are disposed in the pad region of the substrate. The fuse structure is disposed in the ... 05/10/07 - 20070102786 - Semiconductor device A semiconductor device of the present invention comprises: a substrate; a plurality of wiring layers formed over the substrate; a fuse formed in an uppermost one of the plurality of wiring layers; a first insulating film made up of a single film and formed on the uppermost wiring layer such ... 05/10/07 - 20070102785 - Semiconductor device with fuse and method of fabricating the same A semiconductor device having a fuse and a method of fabricating the same are provided. An embodiment of he semiconductor device includes a fuse pattern having a fuse conductive pattern disposed on a semiconductor substrate and a fuse capping pattern disposed on the fuse conductive pattern. An upper insulating layer ... 05/03/07 - 20070096251 - Semiconductor device and method of fabricating the same In an embodiment, a semiconductor device includes a first fuse cutting portion in which fuse lines are arranged transversely adjacent to each other, a first runner portion in which runner lines connected to the fuse lines are arranged transversely adjacent to each other but at smaller intervals than those of ... 05/03/07 - 20070096250 - Semiconductor device and method of manufacturing the same A semiconductor device including: a semiconductor layer; a transistor formed in the semiconductor layer; a first interlayer dielectric formed above the semiconductor layer; a plurality of first interconnect layers formed above the first interlayer dielectric; a second interlayer dielectric formed over the first interlayer dielectric and the first interconnect layers; ... 04/26/07 - 20070090486 - Fuse and method for disconnecting the fuse The fuse comprises an interconnection part 14 luding a silicon layer; a contact part 20b connected one end of the interconnection part 14; and a contact part 20aconnected to the other end of the interconnection part 14 and containing a metal material. A current is flowed from the contact part ... 04/05/07 - 20070075396 - Semiconductor device and manufacturing method thereof A semiconductor device includes a semiconductor substrate having a diffusion layer. An insulating film is formed on the semiconductor substrate, a fuse section of fuses is formed on the insulating film. An interlayer insulating film is formed on the fuse section and the insulating film, and an antenna section is ... 03/29/07 - 20070069331 - Methods of forming electromigration and thermal gradient based fuse structures Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a metallic fuse structure by forming at least one via on a first interconnect structure, lining the at least one via with a barrier layer, and then forming a second interconnect structure on the at least ... 03/29/07 - 20070069330 - Fuse structure for a semiconductor device A fuse structure on a peripheral region of a substrate, the fuse structure comprising a plurality of fuses disposed on a plane and parallel to each other, wherein each fuse has a melting block and the melting blocks are arranged in a staggered form. Because of the fuse structure with ... 03/22/07 - 20070063313 - Electronic circuit arrangement An electronic circuit arrangement has a substrate which has at least one metallization layer. At least one electrical interconnect and/or at least one via are formed in the metallization layer such that the electrical interconnect and the via are in the form of an electrical fuse link. In addition, the ... 03/22/07 - 20070063312 - Semiconductor device having fuse element In a semiconductor device including a switching element and a fuse element which is connected in series with the switching element and which melts and blows out as a result of an electric current flowing therethrough when the switching element is placed in an electrically conducting state, in which an ... 03/22/07 - 20070063311 - Rewiring substrate strip having a plurality of semiconductor component positions A rewiring substrate strip (100) has a plurality of semiconductor component positions (2) for semiconductor components (3). The semiconductor component positions are arranged in rows and columns. A plurality of semiconductor component positions (2) can be combined to form a component group (5). The semiconductor components (3) of a component ... 03/22/07 - 20070063310 - A metal fuse for semiconductor devices and methods of manufacturing thereof Described is a metal fuse in a semiconductor device that can be readily blown up without compromising device reliability, as well as methods of manufacturing thereof. In one embodiment, a metal fuse structure according to the disclosed principles comprises a semiconductor substrate, and an interconnect layers located on the semiconductor ... 03/15/07 - 20070057342 - Semiconductor fuse box and method for fabricating the same A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse ... 03/08/07 - 20070052063 - Semiconductor device An electric fuse includes a wide interconnect and a narrow interconnect. The electric fuse has a juxtaposed region in which a plurality of straight line portions are juxtaposed with each other by folding the wide interconnect and the narrow interconnect has a narrower width than that of the wide interconnect, ... 03/01/07 - 20070045772 - Fuse structure for a semiconductor device A fuse structure for a semiconductor device is provided. The fuse structure includes a fuse layer between the upper and bottom insulating layers. The fuse layer is connected to the other metal layers through via plugs. The fuse layer includes separate blocks and at least a connecting block and is ... 02/08/07 - 20070029638 - Semiconductor device and methods of protecting a semiconductor device A semiconductor device and methods for protecting a semiconductor device. In an example, the semiconductor device may include a semiconductor substrate including at least one electrostatic discharge (ESD) protection device, at least one metal interconnection line connected to the at least one ESD protection device through a conductive plug and ... 02/01/07 - 20070023861 - Fuse structure window The present invention provides a fuse structure. The fuse structure comprises a substrate, a plurality of conductive layers, a plurality of dielectric layers and a plurality of conductive plugs. The novel fuse structure includes a plurality of fuse units, and a new layout of the fuse units to increase the ... 02/01/07 - 20070023860 - Semiconductor device having a fuse barrier pattern and fabrication method thereof In a semiconductor device having a plurality of fuses and a method of fabricating the same, the semiconductor device comprises an inter-layer dielectric layer on a semiconductor substrate; a plurality of fuses on the inter-layer dielectric layer, an inter-metallic dielectric layer on the plurality of fuses and the inter-layer dielectric ... 02/01/07 - 20070023859 - Contact fuse which does not touch a metal layer The present invention provides a semiconductor device fuse, comprising a metal layer and a first semiconductor layer that electrically couples the metal layer to a fuse layer, wherein the fuse layer is spaced apart from the metal layer. The semiconductor device fuse further comprises a second semiconductor layer that forms ... 01/25/07 - 20070018279 - Protection layer for preventing laser damage on semiconductor devices A semiconductor structure prevents energy that is used to blow a fuse from causing damage. The semiconductor structure includes a device, guard ring, and at least one protection layer. The device is constructed on the semiconductor substrate underneath the fuse. The seal ring, which surrounds the fuse, is constructed on ... 01/18/07 - 20070013025 - Semiconductor memory device and method of manufacturing the same A semiconductor memory device includes an insulation layer disposed in a fuse region of a substrate, a fuse including a conductive pattern disposed on the insulation layer and a metal pattern disposed in physical contact with the conductive pattern, the conductive pattern composed of a material that thermally explodes when ... 01/11/07 - 20070007621 - Fuse breakdown method adapted to semiconductor device A plurality of pulses each having relatively low energy are consecutively applied to a subject fuse to cause breakdown, wherein the total energy of pulses is set in light of a prescribed breakdown threshold, which is calculated in advance. The subject fuse has a pair of terminals and an interconnection ... 01/11/07 - 20070007620 - Fuse box of semiconductor device A fuse box of a semiconductor device is provided. More specifically, provided is a device of forming a uniformly residual oxide film by rearranging fuse boxes in consideration of an etching ratio depending on plasma density of the semiconductor device to prevent a fuse attack. During a repair etching process ... 12/14/06 - 20060278953 - Semiconductor memory device A semiconductor device comprises a lower substrate, an interlayer insulation film formed on the lower substrate, a first wiring pattern having a first wiring layer formed on the lower substrate, a first fuse formed on the interlayer insulation film, and a first contact plug electrically connected between the first wiring ... 12/07/06 - 20060273424 - Semiconductor device The semiconductor device has a fuse and a fuse opening created above the fuse. The fuse is divided into a plurality of lines at a crossing portion where the fuse crosses with an edge of the fuse opening. The plurality of divided lines of the fuse 101 are in parallel ... 11/30/06 - 20060267137 - Method and structure to prevent circuit network charging during fabrication of integrated circuits An integrated circuit and method of fabricating the integrated circuit. The integrated circuit, including: one or more power distribution networks; one or more ground distribution networks; one or more data networks; and fuses temporarily and electrically connecting power, ground or data wires of the same or different networks together, the ... 11/30/06 - 20060267136 - Integrated circuit (ic) with on-chip programmable fuses An Integrated Circuit (IC) chip with fused circuits and method of making the IC. Fuses in an upper wiring layer are formed using a multi-tone mask to define rounded bottom corners on the fuses, while wiring in the upper wiring layer maintain a rectangular cross-section. ... 11/23/06 - 20060261437 - Methods of forming electromigration and thermal gradient based fuse structures Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a metallic fuse structure by forming at least one via on a first interconnect structure, lining the at least one via with a barrier layer, and then forming a second interconnect structure on the at least ... 11/09/06 - 20060249808 - Reprogrammable electrical fuse The present invention provides a reprogrammable electrically blowable fuse. The electrically blowable fuse is programmed using an electro-migration effect and is reprogrammed using a reverse electro-migration effect. The state (i.e., “opened” or “closed”) of the electrically blowable fuse is determined by a sensing system which compares a resistance of the ... 10/26/06 - 20060237818 - Fuse structure of semiconductor device and method for fabricating same Provided a double-wired fuse structure of a semiconductor device and a method for fabricating the same which is not affected electrically by fuse crack. The fuse structure of a semiconductor device comprises a fuse layer formed over a semiconductor substrate wherein a predetermined portion of the fuse layer is cut, ... 10/19/06 - 20060231921 - Micro fuse A micro fuse for use in a semiconductor device. The micro fuse comprises an insulating substrate and an elongate metal fuse member, the fuse member being supported at either end on the substrate and including at least one fuse region suspended out of contact with the substrate and shaped such ... 10/12/06 - 20060226508 - Semiconductor device having patterns for protecting fuses and method of fabricating the semiconductor device A semiconductor device having patterns for protecting fuses is provided. The semiconductor device comprises a plurality of fuses formed on a semiconductor substrate, and a pattern covering a region of the semiconductor device where the fuses are not to be cut. The patterns formed on the semiconductor device protect the ... 10/12/06 - 20060226507 - Fuse structure having a tortuous metal fuse line A laser fuse structure for a semiconductor device, the laser fuse structure having an array of laser fuses wherein one or more of the fuses in the array have a tortuous fuse line extending between first and second connectors that connect the fuse to an underlying circuit area. ... 10/05/06 - 20060220174 - E-fuse and anti-e-fuse device structures and methods Standard photolithography is used to pattern and fabricate a final polysilicon wafer imaged structure which is smaller than normal allowable photo-lithographic minimum dimensions. Three different methods are provided to produce such sub-minimum dimension structures, a first method uses a photolithographic mask with a sub-minimum space between minimum size pattern features ... 09/28/06 - 20060214260 - Semiconductor device having fuse pattern and methods of fabricating the same A semiconductor device includes a semiconductor substrate having a fuse region and an interconnection region, a first insulating layer formed in the fuse region and the interconnection region, a fuse pattern formed on the first insulating layer in the fuse region, the fuse pattern including a first conductive pattern and ... 09/28/06 - 20060214259 - Hybrid chip fuse assembly having wire leads and fabrication method therefor A chip fuse includes a substrate, a fuse element extending on the substrate, and first and second wire leads coupled to the fuse element. Contact pads may extend over portions of the fuse element and establish electrical connection to the first and second leads. A conductive medium such as solder ... 09/07/06 - 20060197179 - Dense semiconductor fuse array The present invention provides a dense semiconductor fuse array having common cathodes. The dense semiconductor fuse array of the present invention occupies less area than conventional semiconductor fuse arrays, can comprise integrated diodic components, and can require only one metal wiring layer for making electrical connections to the fuse array. ... 07/20/06 - 20060157819 - Efuse structure A surface of a semiconductor substrate comprises at least one electrical conduction structure and at least one eFuse. The electrical conduction structure comprises a first poly silicon layer and a first poly silicide layer formed in the first poly silicon layer. The eFuse comprises a second poly silicon layer and ... 07/06/06 - 20060145291 - Structure and programming of laser fuse A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the dielectric layer. The fuse link electrically connects ... 07/06/06 - 20060145290 - Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type A semiconductor device includes a diffusion area formed in a semiconductor layer of a first conductive type. The diffusion area comprises first and second impurity diffusion areas of the first and second conductive types, respectively. The diffusion area has a first and second areas which are defined by an impurity ... 06/29/06 - 20060138589 - Semiconductor device with a fuse part and method of manufacturing the same The present invention provides a semiconductor device with a fuse part and a method of forming the same. The method includes forming a selective metal layer on a via hole which is connected to a metal line in a semiconductor device, forming a fuse metal layer on the selective metal ... 06/29/06 - 20060138588 - Self-configuring component by means of arcing A component with an internal conductor is so configured that it is ruptured at a predetermined position while forming an arc, if predetermined current/voltage conditions occur at the terminals of the component. The component includes a circuit element which is so arranged that an arc formed at the predetermined position ... 06/22/06 - 20060131690 - Fuse box of semiconductor device and fabrication method thereof A fuse box includes a semiconductor substrate having a fuse region, and a lower line in the fuse region that has a first region and a second region. An upper line is placed on the upper part of the lower line to overlap the first region. A fuse is placed ... 06/08/06 - 20060118904 - Fuse structure with charge protection circuit A fuse structure for memory cell repair in a RAM device. The fuse structure includes a substrate, a fuse layer over an isolation region on the substrate, a charge protection circuit electrically connected to one side of the fuse layer, and two conductive layers overlying the substrate and electrically connected ... 04/27/06 - 20060087002 - Semiconductor device On a silicon substrate 120 of a semiconductor device, a field oxide film 101 is provided. On the field oxide film 101, two fuses 104 are provided. Directly below the fuses 104 in the silicon substrate 120, an n-type well 102 is provided. Besides the n-type well 102, a p-type ... 04/27/06 - 20060087001 - Programmable semiconductor device A programmable device (eFuse), includes: a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having a first end (12a), a second end (12b), a fuse link (11) between the ends, and an upper surface S. The semiconductor material ... 04/20/06 - 20060081959 - Poly-silicon stringer fuse A polysilicon silicide stringer fuse is constructed having a narrow width by using an overlay tolerance of the photo stepper tool instead of the minimum critical dimension tolerance of the stepper tool. In an example embodiment, a fuse (200) for integration within a semiconductor comprises depositing an insulating layer (205) ... 04/13/06 - 20060076642 - Semiconductor device and manufacturing method thereof The present invention provides a semiconductor device comprising: a substrate; a first insulating film formed on a principal surface of the substrate; a second insulating film formed on the first insulating film; a plurality of fuses formed on the second insulating film; and a blocking layer disposed in the first ... 03/23/06 - 20060060938 - Resettable fuse device and method of fabricating the same A resettable fuse device is fabricated on one surface of a semiconductor substrate (10) and includes: a gate region (20) having first and second ends; a source node (81) formed in proximity to the first end of the gate region; an extension region (52) formed to connect the source node ... 03/16/06 - 20060054993 - Semiconductor device having fuse with protection capacitor A semiconductor device has a fuse, an internal circuit and a protection capacitor. The fuse has a first terminal connected to be applied to a fixed voltage and a second terminal. The internal circuit includes a transistor. The transistor has a threshold voltage and a gate. The protection capacitor is ... 03/16/06 - 20060054992 - Semiconductor device having fuse area surrounded by protection means A semiconductor device has a semiconductor substrate, first and second insulating layers, a fuse, a diffusion layer and a conductive pattern. The first insulating layer is selectively formed on a surface of the semiconductor substrate. The fuse is formed on the first insulating layer. The diffusion layer is formed on ... 03/02/06 - 20060043526 - Lateral programmable polysilicon structure incorporating polysilicon blocking diode A programmable element includes a diode and a programmable structure formed in a polysilicon layer isolated from a semiconductor substrate by a dielectric layer. The diode includes a first region and a second region of opposite conductivity types. The programmable structure includes a third region and a fourth region of ... 02/23/06 - 20060038256 - Semiconductor fuse arrangements The invention includes semiconductor fuse arrangements containing an electrically conductive plate over and in electrical contact with a plurality of electrically conductive links. Each of the links contacts the electrically conductive plate as a separate region relative to the other links, and the region where a link makes contact to ... 02/23/06 - 20060038255 - Mos electric fuse, its programming method, and semiconductor device using the same A programming method of a MOS electric fuse includes steps of preparing, as a fuse element, a MOS transistor which comprises second conductivity type first and second impurity regions formed to face with each other on an upper surface of a first conductivity type well on a semiconductor substrate, a ... 02/02/06 - 20060022300 - Self correcting multiple-link fuse An improved fuse link structure and fuse blowing method, the fuse-link structure including a plurality of elongated fuse-link members comprising polysilicon electrically connected in parallel according to a common input Voltage contact and common output current contact to form a fuse-link structure; and, wherein at least a portion of the ... 01/26/06 - 20060017134 - Input protection circuit preventing electrostatic discharge damage of semiconductor integrated circuit An input protection circuit comprises a semiconductor chip, an internal circuit disposed on the semiconductor chip, a first input/output terminal which is disposed on the semiconductor chip and connected to the internal circuit, a second input/output terminal which is disposed on the semiconductor chip, connected to the internal circuit and ... 12/29/05 - 20050285223 - Fuse structure A fuse structure is described. The fuse structure includes a first region adapted to be coupled to a voltage source, a second region adapted to be coupled to a ground, and a current flow region disposed between the first and second regions. The current flow region has a configuration that ... 12/29/05 - 20050285222 - New fuse structure An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via preferably comprises a barrier layer and a conductive material. A second-layer conductive line is formed over the ... 11/24/05 - 20050258506 - Arrangement and process for protecting fuses/anti-fuses An arrangement for protecting fuses/anti-fuses on chips which serve to activate redundant circuits or chip functions includes a passivation layer (e.g., hard passivation) arranged on a fully processed chip with the exception of metal contacts of a metallization level and the fuses. The chip is provided with a redistribution layer ... 11/24/05 - 20050258505 - Mixed implantation on polysilicon fuse for cmos technology A programmable fuse device includes a polysilicon layer having a mixed ion implantation disposed on a silicon substrate. The polysilicon layer includes at least one first region having a first type ion implantation and at least one second region having a second type ion implantation opposite to the first type. ... 11/10/05 - 20050247996 - Storing information with electrical fuse for device trimming A method and system is disclosed for device trimming. A device trimming system comprises at least one reference device to be trimmed having a reference electrical parameter, at least one trimming device to be coupled with the reference device for forming a trimmed reference device providing an altered reference electrical ... 11/10/05 - 20050247995 - Metal contact fuse element Severable metal contacts (42) are provided for use within a circuit in a semiconductor device whereby an open circuit may be formed by the application of a pre-selected voltage or current. Preferred embodiments and associated methods are described in which a semiconductor device fuse (30) includes first and second conductors ... 10/27/05 - 20050236688 - Fuse regions of a semiconductor memory device and methods of fabricating the same A device and method of manufacturing a fuse region are disclosed. The fuse region may include an interlayer insulating layer formed on a substrate, a plurality of fuses disposed on the interlayer insulating layer, and fuse isolation walls located between the fuses, wherein each of the fuse isolation walls may ... 10/20/05 - 20050230782 - Semiconductor device and method for manufacturing the same A semiconductor device and a method for manufacturing the same of the present invention in which the semiconductor device is provided with a fuse structure or an electrode pad structure, suppress the copper blowing-out from a copper containing metal film. The semiconductor device comprises a silicon substrate, SiO2 film provided ... 10/13/05 - 20050224910 - Semiconductor integrated circuit having polysilicon fuse, method of forming the same, and method of adjusting circuit parameter thereof Exemplary semiconductor integrated circuits are disclosed that include polysilicon fuses that can be programmed by supplying programming currents. The fuse is formed of a polysilicon film having a sheet resistance of 1.7 to 6 kΩ/sq. As a result, the polysilicon fuse has a high resistance and can be programmed with ... 10/06/05 - 20050218476 - Integrated process for fuse opening and passivation process for cu/low-k imd A new process flow is provided for the creation of a fuse contact and a bond pad. The invention starts with a semiconductor substrate over the surface of which is provided top level metal and fuse metal in the surface of a layer of insulation deposited over the surface of ... 10/06/05 - 20050218475 - Low power fuse structure and method for making the same A fuse comprises a silicide element disposed above a substrate, a first terminal contact coupled to a first end of the silicide element, and a first metal line disposed above the silicide element and coupled to the first terminal contact. The fuse further comprises a plurality of second terminal contacts ... 09/29/05 - 20050212081 - Fuse region of a semiconductor device and method of fabricating the same In a fuse region of a semiconductor device, and a method of fabricating the same, the fuse region includes an interlayer insulating layer on a semiconductor substrate, a plurality of fuses on the interlayer insulating layer disposed in parallel with each other, a blocking layer on the interlayer insulating layer ... 09/29/05 - 20050212080 - Diode junction poly fuse System and method for providing an electrical fuse having a p-n junction diode. A preferred embodiment comprises a cathode, an anode, and one or more links formed between the cathode and the anode. The cathode and the portion of the cathode adjoining the link are doped with a first impurity, ... 09/22/05 - 20050205965 - Semiconductor device having a fuse including an aluminum layer A semiconductor device comprising a damascene structure comprising copper and a fuse comprising aluminum connected to the damascene structure. ... 09/08/05 - 20050194659 - Semiconductor assemblies The invention includes a semiconductor processing method wherein an insulative mass is formed across a first electrical node and a second electrical node. The mass has a pair of openings extending therethrough to the electrical nodes. The individual openings each have a periphery defined by one of the electrical nodes ... 09/01/05 - 20050189613 - Semiconductor device as electrically programmable fuse element and method of programming the same A fuse link is formed between first and second terminals. The first and second terminals and fuse link have a polysilicon layer and a layer formed on the polysilicon layer and containing a metal element. At least a portion of the fuse link is an amorphous silicon layer. ... 09/01/05 - 20050189612 - Method for forming copper fuse links An improved fuse link structure and method of forming the same, the method including forming a dual damascene structure by a trench-first process to form a dual damascene having a relatively thinner fuse link portion spanning an area between and overlying fuse metal interconnect structures including a mechanically robust dielectric ... 07/28/05 - 20050161766 - Semiconductor device and method for fabricating the same The semiconductor device comprises an inter-layer insulating film 18 formed over a substrate 10, a fuse 26 buried in the inter-layer insulating film 18, and a cover film 30 formed over the inter-layer insulating film 18 and having an opening formed therein down to the fuse 26. The inter-layer insulating ... 07/21/05 - 20050156276 - Semiconductor device and manufacturing method thereof When the film thickness of an insulating film on a fuse connected to a circuit is not uniform within a wafer surface, there was a problem that disconnection of the fuse might become insufficient due to the insufficient intensity of a laser or disconnection of even an adjacent fuse due ... 07/21/05 - 20050156275 - Protection circuit located under fuse window A semiconductor device having a fuse window above a substrate, the semiconductor device has at least one fuse protection circuit located under the fuse window. The fuse protection circuit includes a fuse having a first end connected to a first voltage and a second end. A first transistor having a ... 07/07/05 - 20050145982 - Integrated fuse for multilayered structure A device includes a substrate and a first layer disposed adjacent the substrate. A second layer is disposed adjacent the first layer. A third layer contains a gap and is disposed adjacent the second layer. A fuse is electrically coupled to the third layer and is located in the proximity ... 06/30/05 - 20050139953 - Non-volatile memory devices including fuse covered field regions and methods of forming the same A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse. An isolation layer is configured to isolate the ... 06/23/05 - 20050133882 - Integrated circuit fuse and method of fabrication An integrated circuit fuse includes P-type and N-type regions in a substrate, the P-type and N-type regions abutting at a junction, a conductive layer on the P-type and N-type regions, and circuit connections to the conductive layer for applying sufficient electrical energy to open the conductive layer over the junction ... 06/16/05 - 20050127475 - Apparatus and method for electronic fuse with improved esd tolerance Tolerance to ESD is increased in an electronic fuse by providing at least one non-conductive region adjacent to a conductive region on the surface of an insulator. Such an arrangement reduces the thermal stresses imposed on the insulator in high current applications. Where multiple conductive and adjacent non-conductive regions are ... 06/09/05 - 20050121741 - Apparatus and method for electronic fuse with improved esd tolerance Tolerance to ESD is increased in an electronic fuse by providing at least one non-conductive region adjacent to a conductive region on the surface of an insulator. Such an arrangement reduces the thermal stresses imposed on the insulator in high current applications. Where multiple conductive and adjacent non-conductive regions are ... 06/02/05 - 20050116316 - Semiconductor device with fuse box and method for fabricating the same A semiconductor device comprises a semiconductor substrate having a bonding pad region; and a bonding pad and a fuse box formed in the bonding pad region. Thus, the chip size can be reduced and the manufacturing yield can be increased. ... 06/02/05 - 20050116315 - Semiconductor device and blowout method of fuse In a semiconductor device comprising a fuse 11 which makes connection between a first interconnection 10 and a second interconnection 12, and a first low heat-conductive section 13 which makes connection between the first interconnection 10 and a third interconnection 14 at a site of the first interconnection 10 where ... 06/02/05 - 20050116314 - Semiconductor memory integrated circuit and layout method of the same A semiconductor memory integrated circuit includes a plurality of pads; a peripheral circuit having a plurality of control circuits which are arranged at locations adjacent to the plurality of the pads and receive a plurality of input signals to generate a plurality of output signals in response to a plurality ... ### FreshPatents.com Support |