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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Integrated Circuit Structure With Electrically Isolated Components > Passive Components In Ics Passive Components In IcsPassive Components In Ics patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.09/20/07 - 20070215976 - Integrated passive device substrates The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the ... 07/19/07 - 20070164393 - Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method The aim of the invention is to configure a photodetector (10) such that no disadvantages are created for processing low luminous intensities on detectors known in prior art, especially when monolithically integrating the evalation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically ... 06/28/07 - 20070145523 - Integrateable capacitors and microcoils and methods of making thereof Method for integrally forming high Q tunable capacitors and high Q inductors on a substrate are described. A variable capacitors may employ stops between a moveable electrode and a fixed electrode to reduce and/or prevent electrical shorting between the moveable and fixed electrode. A capacitor may employ a split bottom ... 05/24/07 - 20070114634 - Integrated passive device system An integrated passive device system is disclosed including forming a first dielectric layer over a semiconductor substrate, depositing a metal capacitor layer and a silicide layer on the first dielectric layer, forming a second dielectric layer over the metal capacitor layer and the silicide layer, and depositing a metal layer ... 05/10/07 - 20070102784 - Electronic component An electronic component includes a substrate, a capacitor, and a wiring. The capacitor has a multilayer structure including a first electrode film provided on the substrate, a second electrode film of 2 to 4 μm in thickness disposed to face the first electrode film, and a dielectric film interposed between ... 05/03/07 - 20070096249 - Three-dimensionally integrated electronic assembly A three-dimensionally integrated electronic assembly includes a substrate that includes active circuitry formed therein. At least one electronic component (e.g., an integrated circuit chip, active component, passive component, active assembly, and/or passive assembly) is mounted on the substrate. At least one redistribution connection is disposed between the substrate and at ... 05/03/07 - 20070096248 - Phase change memory cell A memory cell includes a first electrode, a second electrode, and phase-change material between the first electrode and the second electrode. The phase-change material defines a narrow region. The memory cell includes first insulation material having a first thermal conductivity and contacting the phase-change material. A maximum thickness of the ... 03/29/07 - 20070069329 - Apparatus and method for reducing parasitic capacitance in a semiconductor device A semiconductor device exhibiting low parasitic resistance comprises a first substrate characterized by a first resistivity; a second substrate characterized by a second resistivity, a third substrate and a metal element. These substrates form a multi-layer semiconductor device where the second substrate is formed on the first substrate; the third ... 03/22/07 - 20070063309 - Integrated circuitry and method for manufacturing the same The integrated circuitry on a semiconductor substrate includes an integrated circuit arranged in a circuit area of the semiconductor substrate and a stress-sensitive structure on the semiconductor substrate for detecting a mechanical stress component in the semiconductor substrate, wherein the stress-sensitive structure is implemented to provide an output signal depending ... 03/15/07 - 20070057341 - Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured A process for manufacturing a phase change memory cell, comprising the steps of: forming a resistive element; forming a delimiting structure having an aperture over the resistive element; forming a memory portion of a phase change material in the aperture, the resistive element and the memory portion being in direct ... 03/08/07 - 20070052062 - Vertical lc tank device An LC tank structure. The structure, including a set of wiring levels on top of a semiconductor substrate, the wiring levels stacked on top of each other from a lowest wiring level nearest the substrate to a highest wiring level furthest from the substrate; an inductor in the highest wiring ... 03/01/07 - 20070045771 - Reprogrammable switch using phase change material A reprogrammable switch includes first phase-change material, a reference element, and a sense amplifier. The sense amplifier is coupled to the first phase-change material and the reference element and configured to compare a signal from the first phase-change material to a signal from the reference element and output a voltage ... 02/22/07 - 20070040236 - Discrete on-chip soi resistors A semiconductor resistor, method of making the resistor and method of making an IC including resistors. Buried wells are formed in the silicon substrate of a silicon on insulator (SOI) wafer. At least one trench is formed in the buried wells. Resistors are formed along the sidewalls of the trench ... 01/04/07 - 20070001258 - Capacitor A capacitor includes a first electrode and a second electrode arranged so that a main surface of the first electrode opposes a main surface of the second electrode, a first pseudo electrode layer disposed on the main surface of the first electrode, and a dielectric layer disposed between the first ... 12/28/06 - 20060289964 - Spacecraft regulation unit with decentralized bus capacitance A Spacecraft Regulation Unit SRU or Power Conditioning Unit PCU with decentralized capacitance comprising several power conversion modules each coupled, via interconnection means, to a high-level power bus for supplying power to equipment of a satellite. Each power conversion module has a bus capacitor (Cmod) coupled via the interconnection means ... 12/21/06 - 20060284279 - Thin film fuse phase change ram and manufacturing method A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode ... 11/30/06 - 20060267135 - Circuit arrangement placed on a substrate and method for producing the same A circuit arrangement placed on a substrate has at least one semiconductor component arranged on the substrate and having at least one electrical contact surface and at least one connection line also arranged on the substrate and used to electrically contact the contact surface of the semiconductor component. The connection ... 10/19/06 - 20060231920 - Mim capacitor structure and method of fabrication A method of forming a metal-insulator-metal (MIM) capacitor wherein a plate of a MIM capacitor is formed in the entire thickness of a metallization layer of a semiconductor device. At least one thin conductive material layer is disposed within the material of the metallization layer to reduce the surface roughness ... 10/19/06 - 20060231919 - Passive microwave device and method for producing the same The present invention provides an electrical circuit component, specifically a passive microwave device, and a method for producing the same. In one embodiment, the present invention provides an electrical circuit component, comprising: at least one patterned resistive area on a first surface of a diamond substrate, a first patterned conductive ... 10/05/06 - 20060220173 - Wafer level package including a device wafer integrated with a passive component According to an exemplary embodiment, a wafer level package includes a device wafer including at least one device wafer contact pad and a device, and where the at least one device wafer contact pad is electrically connected to the device. The wafer level package includes a first polymer layer situated ... 09/07/06 - 20060197178 - Electrical fuses with redundancy The present disclosure provides an electrical fuse cell with redundancy features and the method for operating the same. The fuse cell includes a first set of electrical fuses having at least one electrical fuse contained therein, and a second set of electrical fuses having at least one electrical fuse for ... 07/27/06 - 20060163691 - High voltage sensor device and method therefor In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element. ... 06/29/06 - 20060138587 - Semiconductor device and manufacturing method thereof An semiconductor device and a manufacturing method minimizes the inductor area in a high frequency device by forming an inductor with a vertical spiral geometry. Accordingly, the device can be highly integrated. In addition, the inductor area overlapped with various devices on a substrate can be minimized so as to ... 05/25/06 - 20060108662 - An electrically programmable fuse for silicon-on-insulator (soi) technology A fuse structure and method of forming the same is described, wherein the body of the fuse is formed from a crystalline semiconductor body on an insulator, preferably of a silicon-on-insulator wafer, surrounded by a fill-in dielectric. The fill-in dielectric is preferably a material that minimizes stresses on the crystalline ... 05/18/06 - 20060102982 - Antifuse structure having an integrated heating element The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a ... 05/11/06 - 20060097344 - Integrated thin film capacitor/inductor/interconnect system and method A system and method for the fabrication of high reliability capacitors (1011), inductors (1012), and multi-layer interconnects (1013) (including resistors (1014)) on various thin film hybrid substrate surfaces (0501) is disclosed. The disclosed method first employs a thin metal layer (0502) deposited and patterned on the substrate (0501). This thin ... 05/11/06 - 20060097343 - Programmable matrix array with phase-change material A phase-change material is proposed for coupling interconnect lines an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer between the phase change material and at least one of the lines. The matrix array may be used in a programmable logic device. The ... 05/11/06 - 20060097342 - Programmable matrix array with phase-change material A phase-change material is proposed for coupling interconnect lines an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer between the phase change material and at least one of the lines. The matrix array may be used in a programmable logic device. The ... 05/11/06 - 20060097341 - Forming phase change memory cell with microtrenches A semiconductor substrate is covered by a dielectric region. The dielectric region accommodates a memory element and a selection element forming a phase change memory cell. The memory element is formed by a resistive element and by a storage region of a phase change material extending on and in contact ... 04/13/06 - 20060076641 - Methods of fabricating phase changeable semiconductor memory devices including multi-plug conductive structures and related devices In fabricating a phase changeable memory device, an insulating layer with an opening extending therethrough is formed on a substrate. A conductive structure is formed in the opening. The conductive structure includes a first conductive plug on opposing sidewalls of the opening and a surface therebetween and a second plug ... 03/16/06 - 20060054991 - Forming phase change memory arrays A phase change memory may be formed to have a dimension that is sub-lithographic in one embodiment by forming a surface feature over the phase change material, and coating the surface feature with a mask of sub-lithographic dimensions. The horizontal portions of the mask and the surface feature may then ... 01/26/06 - 20060017133 - Electronic part-containing elements, electronic devices and production methods An electronic part-containing element used by being incorporated in an electronic device, in which the electronic part-containing element comprises an insulating support member which does not take part in the constitution of the electronic device but is removed in the process of producing the electronic device, and a circuit module ... 01/19/06 - 20060012006 - Capacitors integrated with inductive components Techniques for producing integrated capacitors are disclosed. According to one of the techniques, one or more layers are introduced in conjunction with a ground layer supporting a substrate on which various components are realized. Depending on the use of an integrated capacitor, micro capacitors can be formed between one introduced ... 01/19/06 - 20060012005 - Method for producing a component comprising a conductor structure that is suitable for use at high frequencies The invention provides a process for producing a substrate having a conductor arrangement that is suitable for radio-frequency applications, with improved radio-frequency properties. For this purpose, the process includes the steps of: depositing a structured glass layer having at least one opening over a contact-connection region by evaporation coating on ... 01/12/06 - 20060006494 - Electrically programmable polysilicon fuse with multiple level resistance and programming A method to form a programmable resistor device in an integrated circuit device is achieved. The method comprises depositing a semiconductor layer overlying a substrate. The semiconductor layer is patterned to form a plurality of lines. The lines are electrically parallel between a first terminal and a second terminal. Any ... 01/05/06 - 20060001123 - Module integrating mems and passive components An apparatus may include a first substrate, one or more microelectromechanical systems (MEMS) coupled to the first substrate, a second substrate coupled with the first substrate, and one or more passive components coupled to the second substrate. A method may include aligning a first substrate having one or more MEMS ... 12/29/05 - 20050285221 - Variable capacitance device with high accuracy A capacitance device includes a dielectric film, the first electrode and the second electrode. One of the two electrodes is divided into a plurality of electrode portions. Each of the divided electrode portions is connected with each other through switching transistors so that appropriate portions contributing to the capacitance can ... 12/22/05 - 20050280117 - Vertical diode structures A method of making a vertical diode is provided, the vertical dioxide having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the diode opening and contacts the active region. The ... 12/22/05 - 20050280116 - Integration manufacturing process for mems device A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting ... 12/08/05 - 20050269666 - Electrical fuses as programmable data storage An electrical fuse is disclosed. It is formed by a silicide layer on a polysilicon layer, with a first dielectric section separating the electrical fuse from a semiconductor substrate and a second dielectric section separating the electrical fuse from at least one electrical conductor directly above the fuse. The polysilicon ... 11/24/05 - 20050258504 - Fuse structure for a semiconductor device A fuse structure for a semiconductor device is provided. The fuse structure includes a fuse layer between the upper and lower insulating layers. The fuse layer is connected to the other metal layers through the via plugs. The fuse layer includes at least two separate blocks and at least a ... 10/13/05 - 20050224909 - Power semiconductor switching-device and semiconductor power module using the device A single semiconductor power module includes a power semiconductor chip including an embedded IGBT (the power semiconductor switching-device) and a control semiconductor chip. The power semiconductor chip also includes a gate series resistor integrated therein as a resistor through which the control semiconductor chip drives the power semiconductor chip. In ... 10/13/05 - 20050224908 - Integrated circuit with intergrated capacitor and methods for making same An explanation is given of, inter alia, a circuit arrangement in which an intermediate layer (160) made of a dielectric material is arranged between two metal layers (102 and 104). The intermediate layer (160) is designed in such a way that the capacitance per unit area between the connection layers ... 10/06/05 - 20050218474 - Use of dar coating to modulate the efficiency of laser fuse blows The present invention relates to a laser fuse. The laser fuse comprises an element comprising a heat conductive material. The fuse also includes an absorption element comprising a material with an adjustable capacity for heat or light absorption that overlays the heat conductive element. The fuse also includes an outer ... 10/06/05 - 20050218473 - Network electronic component, semiconductor device incorporating network electronic component, and methods of manufacturing both A network electronic component comprises a network-electronic-component substrate, a thin-film passive element provided on the substrate, and a plurality of external connection electrodes provided on the substrate in connection with the thin-film passive element. ... 09/29/05 - 20050212079 - Nanowire varactor diode and methods of making same A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at least a portion ... 09/22/05 - 20050205964 - Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch semiconductor processing steps. The resulting memory element can be driven by a CMOS steering element. ... 09/15/05 - 20050199979 - Semiconductor device and method for fabricating the same A semiconductor device has a semiconductor chip, a first insulating film and an inductor. The semiconductor chip includes an integrated circuit formed on the main surface of the chip and a plurality of pad electrodes formed on the main surface of the chip and electrically connected to the integrated circuit. ... 09/15/05 - 20050199978 - Semiconductor device and manufacturing method thereof A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR characteristics of a Schottky barrier diode are in a trade-off relationship is hereby solved by forming ... 09/01/05 - 20050189611 - High frequency passive element An insulator layer is fabricated that is composed of a large number of insulating ridges formed with predetermined mutual spacing on a Si substrate. Then, an inductor conductor layer is formed in a spiral or swirl pattern on the insulator layer. An outgoing wiring conductor layer is provided between the ... 07/28/05 - 20050161765 - High-density metal capacitor using dual-damascene copper interconnect An electronic structure having a first conductive layer provided by a dual damascene fabrication process; an etch-stop layer provided by the fabrication process, and electrically coupled with the first conductive layer, the etch-stop layer having a preselected dielectric constant and a predetermined geometry; and a second conductive layer, electrically coupled ... 06/09/05 - 20050121740 - Gapped-plate capacitor In a semiconductor device, a capacitor is provided which has a gap in at least one of its plates. The gap is small enough so that fringe capacitance between the sides of this gap and the opposing plate at least compensates, if not overcompensates, for the missing conductive material that ... ### FreshPatents.com Support |