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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Schottky Barrier > In Integrated Structure

In Integrated Structure

In Integrated Structure patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

03/06/14 - 20140061848 - Schottky isolated nmos for latch-up prevention
An integrated circuit structure includes a substrate, a semiconductor device supported by the substrate, and a guard ring structure disposed around the semiconductor device, the guard ring structure forming a Schottky junction. In an embodiment, the Schottky junction is formed from a p-type metal contact and an n-type guard ring....

01/02/14 - 20140001594 - Schottky diode with leakage current control structures
A Schottky diode includes a device structure having a central portion and a plurality of fingers. Distal portions of the fingers overlie leakage current control (LCC) regions. An LCC region is relatively narrow and deep, terminating in proximity to a buried layer of like polarity. Under reverse bias, depletion regions...

08/29/13 - 20130221476 - Devices and methods related to electrostatic discharge protection benign to radio-frequency operation
Disclosed are systems, devices and methods for providing electrostatic discharge (ESD) protection for integrated circuits. In some implementations, first and second conductors with ohmic contacts on an intrinsic semiconductor region can function similar to an x-i-y type diode, where each of x and y can be n-type or p-type. Such...

08/22/13 - 20130214378 - Semiconductor device including a mosfet and schottky junction
A semiconductor device for use in a power supply circuit has first and second MOSFETS. The source-drain path of one of the MOSFETS are coupled to the source-drain path of the other, and a load element is coupled to a connection node of the source-drain paths. The second MOSFET is...

08/15/13 - 20130207221 - Embedded tungsten resistor
A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above...

01/03/13 - 20130001734 - Schottky diode structure
A Schottky diode structure includes a semiconductor substrate having an anode region and a cathode region. A lightly doped region with a predetermined conductivity type is in the semiconductor substrate. A metal contact overlies the lightly doped region and corresponds to the cathode region to serve as a cathode. A...

12/27/12 - 20120326261 - Semiconductor structure and manufacturing method for the same
A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a well region, a dielectric structure, a first doped layer, a second doped layer and a first doped region. The dielectric structure is on the well region. The dielectric structure has a first dielectric...

12/27/12 - 20120326262 - Semiconductor integrated circuit device and a method of manufacturing the same
To reduce size of a finished product by reducing the number of externally embedded parts, embedding of a Schottky barrier diode relatively large in the amount of current in a semiconductor integrated circuit device has been pursued. It is general practice to densely arrange a number of contact electrodes in...

11/08/12 - 20120280353 - Protective element for electronic circuits
A protective element for electronics has at least one Schottky diode and at least one Zener diode which are located between a power supply and the electronics, the anode of the Schottky diode being connected to the power supply and the cathode of the Schottky diode being connected to the...

08/02/12 - 20120193746 - Semiconductor chip and multi-chip package having the same
A semiconductor chip includes: a semiconductor substrate; an interface member formed through the semiconductor substrate and electrically coupled to an external signal transfer terminal; and a backward diode formed between the semiconductor substrate and the interface member....

07/26/12 - 20120187521 - Schottky diode having a substrate p-n diode
A semiconductor device has a trench junction barrier Schottky diode that includes an integrated substrate p-n diode (TJBS-Sub-PN) as a clamping element, the trench junction barrier Schottky diode being suited, e.g., as a Zener diode having a breakdown voltage of approximately 20 V, for use in motor-vehicle generator systems. In...

05/03/12 - 20120104537 - Semiconductor device and a method for manufacturing a semiconductor device
A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body with a first semiconductor region and a second semiconductor region spaced apart from each other. A first metallization is in contact with the first semiconductor region. A second metallization is...

01/26/12 - 20120018837 - Schottky barrier diode with perimeter capacitance well junction
A Schottky barrier diode comprises a first-type substrate, a second-type well isolation region on the first-type substrate, and a first-type well region on the second-type well isolation region. With embodiments herein a feature referred to as a perimeter capacitance well junction ring is on the second-type well isolation region. A...

09/29/11 - 20110233713 - Schottky diode and method for fabricating the same
A Schottky diode includes a deep well formed in a substrate, an isolation layer formed in the substrate, a first conductive type guard ring formed in the deep well along an outer sidewall of the isolation layer and located at a left side of the isolation layer, a second conductive...

07/07/11 - 20110163408 - Schottky diode with low reverse leakage current and low forward voltage drop
A Schottky diode structure with low reverse leakage current and low forward voltage drop has a first conductive material semiconductor substrate combined with a metal layer. An oxide layer is formed around the edge of the combined conductive material semiconductor substrate and the metal layer. A plurality of dot-shaped or...

03/10/11 - 20110057286 - Semiconductor device and method for manufacturing of the same
The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer which is disposed on the base substrate and has a front surface and a rear surface opposite to the front surface; first ohmic electrodes disposed on the front surface of the first semiconductor layer; a...

12/23/10 - 20100320557 - Semiconductor device
Provided is a semiconductor device having an anode of a Si-FRD and a cathode of a Si-SBD which are serially connected. The Si-SBD has a junction capacitance whose amount of accumulable charge is equal to or more than an amount of charge occurring at the time of reverse recovery of...

12/16/10 - 20100314708 - Junction barrier schottky diode
A junction barrier Schottky diode has an N-type well having a surface and a first peak impurity concentration; a P-type anode region in the surface of the well, and having a second peak impurity concentration; an N-type cathode contact region in the surface of the well and laterally spaced from...

06/03/10 - 20100133644 - Bottom anode schottky diode structure and method
This invention discloses a bottom-anode Schottky (BAS) diode that includes an anode electrode disposed on a bottom surface of a semiconductor substrate. The bottom-anode Schottky diode further includes a sinker dopant region disposed at a depth in the semiconductor substrate extending substantially to the anode electrode disposed on the bottom...

03/11/10 - 20100059849 - Semiconductor component and method of manufacture
A semiconductor component having a low resistance conduction path and a method for manufacturing the semiconductor component. When the semiconductor component is a Schottky diode, one or more trenches are formed in an epitaxial layer of a first conductivity type that is formed over a semiconductor substrate of the first...

10/01/09 - 20090243027 - semiconductor integrated circuit device and a method of manufacturing the same
To achieve a further reduction in the size of a finished product by reducing the number of externally embedded parts, the embedding of a Schottky barrier diode which is relatively large in the amount of current in a semiconductor integrated circuit device has been pursued. In such a case, it...

08/06/09 - 20090194838 - Cosi2 schottky diode integration in bismos process
Cobalt silicide (CoSi2) Schottky diodes fabricated per the current art suffer from excess leakage currents in reverse bias. In this invention, an floating p-type region encircles each anode of a CoSi2 Schottky diode comprising of one or more CoSi2 anodes. The resulting p-n junction forms a depletion region under the...

08/06/09 - 20090194839 - Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
A high-density memory array. A plurality of word lines and a plurality of bit lines are arranged to access a plurality of memory cells. Each memory cell includes a first conductive terminal and an article in physical and electrical contact with the first conductive terminal, the article comprising a plurality...

07/23/09 - 20090184389 - Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
A non-volatile nanotube switch and memory arrays constructed from these switches are disclosed. A non-volatile nanotube switch includes a conductive terminal and a nanoscopic element stack having a plurality of nanoscopic elements arranged in direct electrical contact, a first comprising a nanotube fabric and a second comprising a carbon material,...

06/11/09 - 20090146241 - Semiconductor apparatus and manufacturing method thereof
The present invention provides a semiconductor apparatus for improving a switching speed and a withstand voltage, and a manufacturing method of the semiconductor apparatus. The semiconductor apparatus of the invention including a first conductive type semiconductor substrate, a first conductive type first semiconductor region with an impurity concentration lower than...

03/12/09 - 20090065888 - Semiconductor device and a method of manufacturing the same
The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a main surface of a p-type semiconductor substrate, an n-type cathode region formed in...

02/05/09 - 20090032897 - Semiconductor device and method for its manufacture
In semiconductor devices and methods for their manufacture, the semiconductor devices are arranged as a trench-Schottky-barrier-Schottky diode having a pn diode as a clamping element (TSBS-pn), and having additional properties compared to usual TSBS elements which make possible adaptation of the electrical properties. The TSBS-pn diodes are produced using special...