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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Schottky Barrier Schottky BarrierSchottky Barrier patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/01/07 - 20070252228 - Integrated circuit structure and manufacturing method thereof An integrated circuit structure is described, and includes a substrate, a contact window, and a Schottky contact metal layer. A heavily doped region and a lightly doped region are formed in the substrate. The contact window is disposed above the heavily doped region, and the Schottky contact metal layer is ... 10/11/07 - 20070235830 - High-efficiency schottky rectifier and method of manufacturing same A rectifier device (10) comprising a multi-layer epitaxial film (12) and a rectifier and a transistor manufactured in the film (12), wherein the transistor is oriented vertically relative to the plane of the rectifier. The rectifier and transistor are separated by a transition zone of inverted bias. The rectifier is ... 10/04/07 - 20070228505 - Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p+-n junctions and self-planarizing epitaxially over-grown second n-type drift regions between and, optionally, on top of the p-type regions. The ... 05/17/07 - 20070108547 - Second schottky contact metal layer to improve gan schottky diode performance A Schottky contact is disposed atop a surface of a semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and adjoins the first Schottky contact metal layer. ... 03/22/07 - 20070063305 - Ignition circuit A component formed in a substrate of a first conductivity type, having two inputs and two outputs and: a first diode having its anode connected to a first input and having its cathode connected to a first output; a second diode having its anode connected to a second output and ... 03/08/07 - 20070052057 - Method and schottky diode structure for avoiding intrinsic npm transistor operation A Schottky diode includes an isolation region of a first conductivity type and an anode region of a second conductivity type isolated by the isolation region, the anode region including a lightly doped deep anode region of the second conductivity type and an increased dopant region of the second conductivity ... 03/01/07 - 20070045764 - Semiconductor device A semiconductor device includes a semiconductor substrate of a first conductivity type, a semiconductor region of the first conductivity type formed on a top surface of the semiconductor substrate, a lower electrode formed on a bottom surface of the semiconductor substrate, an upper electrode formed on a top surface of ... 01/11/07 - 20070007614 - Schottky diode with improved surge capability An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device. ... 11/30/06 - 20060267129 - Semiconductor device having rectifying action A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside grooves penetrating the first main electrode layer and ... 11/30/06 - 20060267128 - Schottky barrier diode and method of producing the same An epitaxial layer 12 is formed on a semiconductor substrate comprising silicon carbide, a Schottky electrode 14 is formed surface of the epitaxial layer 12, a noble metal contact electrode is formed on the Schottky electrode 14, and after the formation this contact electrode 15, heat treatment is conducted at ... 11/23/06 - 20060261433 - Nanotube schottky diodes for high-frequency applications Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In ... 11/02/06 - 20060244091 - Semiconductor device In a semiconductor device of the present invention, a protection diode for protecting a device is formed on an epitaxial layer formed on a substrate. A Schottky barrier metal layer is formed on a surface of the epitaxial layer and a P-type diffusion layer is formed at a lower portion ... 10/05/06 - 20060220165 - Semiconductor device There is provided a semiconductor device capable of ensuring a complete enhancement-mode operation and realizing a power transistor excellent in the low-distortion, high-efficiency performance. On a surface of a substrate (1) composed of single crystal GaAs, a second barrier layer (3) composed of AlGaAs, a channel layer (4) composed of ... 08/17/06 - 20060180891 - Semiconductor storage device, semiconductor device, and manufacturing method therefor According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ... 06/15/06 - 20060125040 - Cobalt silicide schottky diode on isolated well A Schottky diode is formed on an isolated well (e.g., a P-well formed in a buried N-well), and utilizes cobalt silicide (CoSi2) structures respectively formed on heavily doped and lightly doped regions of the isolated well to provide the Schottky barrier and backside (ohmic) contact structures of the Schottky diode. ... 06/15/06 - 20060125039 - Low parasitic capacitance schottky diode A low parasitic capacitance Schottky diode including a lightly doped polycrystalline silicon island that is formed on a shallow trench isolation (STI) pad such that the polycrystalline silicon island is entirely isolated from an underlying silicon substrate by the STI pad. The resulting structure reduces leakage and capacitive coupling to ... 06/08/06 - 20060118899 - Schottky barrier tunnel single electron transistor and method of manufacturing the same Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a ... 06/01/06 - 20060113624 - Locos-based schottky barrier diode and its manufacturing methods The LOCOS-based Schottky barrier diode of the present invention comprises a raised diffusion guard ring surrounded by an outer LOCOS field oxide layer, a recessed semiconductor substrate with or without a compensated diffusion layer surrounded by the raised diffusion guard ring, a metal silicide layer formed over a portion of ... 05/25/06 - 20060108659 - Schottky barrier diode and diode array A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and second semiconductor layers and the semiconductor substrate. A Schottky electrode and an ohmic electrode spaced from each other are formed on ... 04/27/06 - 20060086997 - Schottky barrier diode A buffer layer made of i-GaAs not doped with impurities, and an n+ GaAs layer doped with a high-concentration of n-type impurities are stacked in the order named on a semi-insulating GaAs substrate. An n− GaAs layer doped with a low-concentration of n-type impurities is partially located on the n+ ... 04/13/06 - 20060076639 - Schottky diodes and methods of making the same In one aspect, a Schottky diode includes a semiconductor material, and a metal material forming a Schottky barrier junction with the semiconductor material, wherein a cavity having a lateral dimension of at least 200 nm is adjacent to the Schottky barrier junction. In another aspect, a Schottky diode includes a ... 04/06/06 - 20060071291 - Semiconductor device and method of manufacturing the same A semiconductor device includes a semiconductor substrate, and a MOS transistor provided on the semiconductor substrate and having a channel type of a first conductivity, the MOS transistor comprising a semiconductor region of the first conductivity type including first and second channel regions, gate insulating films provided on the first ... 03/30/06 - 20060065945 - Chemical sensor using chemically induced electron-hole production at a schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the ... 02/02/06 - 20060022291 - Unguarded schottky diodes with sidewall spacer at the perimeter of the diode An unguarded Schottky barrier diode structure, which may be part of an integrated device, is provided that blocks the formation of a parasitic MIS diode at the diode's perimeter. The diode is formed in a semiconductive material which may comprise silicon. The portion of the semiconductive material at which the ... 12/15/05 - 20050275055 - Schottky device A regular Schottky diode or a device that has a Schottky diode characteristic and an MOS transistor are coupled in series to provide a significant improvement in leakage current and breakdown voltage with only a small degradation in forward current. In the reverse bias case, there is a small reverse ... 12/08/05 - 20050269658 - Structure for realizing integrated circuit having schottky biode and method of fabricating the same An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that ... 10/13/05 - 20050224906 - Chemical sensor using chemically induced electron-hole production at a schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the ... 10/06/05 - 20050218472 - Semiconductor device manufacturing method thereof A trench is provided, which penetrates a channel layer between adjacent gate electrodes in a MOSFET, and a Schottky metal layer is provided in the trench. Accordingly, a bottom of the trench becomes a Schottky barrier diode. Thus, the Schottky barrier diode can be included in a diffusion region of ... 08/18/05 - 20050179106 - Schottky barrier diode A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrode from a wiring layer ... 08/18/05 - 20050179105 - Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ... 08/18/05 - 20050179104 - Lateral conduction schottky diode with plural mesas A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the forward resistance of a device. The multiple mesas may ... 07/28/05 - 20050161759 - Merged p-i-n schottky structure A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region. ... 07/28/05 - 20050161758 - Schottky with thick trench bottom and termination oxide and process for manufacture A trench schottky diode which includes a thin insulation layer on the sidewalls of its trenches and a relatively thicker insulation layer at the bottoms of its trenches. ... 07/14/05 - 20050151219 - Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ... 06/16/05 - 20050127465 - Trench schottky barrier diode with differential oxide thickness A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination trench. Following a sacrificial oxide layer formation and removal, sidewall and ... 06/16/05 - 20050127464 - Schottky barrier diode and method of making the same A power Schottky rectifier device having pluralities of trenches are disclosed. The Schottky barrier rectifier device includes field oxide region having p-doped region formed thereunder to avoid premature of breakdown voltage and having a plurality of trenches formed in between field oxide regions to increase the anode area thereto increase ... ### FreshPatents.com Support |