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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Responsive To Non-electrical Signal (e.g., Chemical, Stress, Light, Or Magnetic Field Sensors) > Electromagnetic Or Particle Radiation > Light > Narrow Band Gap Semiconductor (<<1ev) (e.g., Pbsnte) > Ii-vi Compound Semiconductor (e.g., Hgcdte) Ii-vi Compound Semiconductor (e.g., Hgcdte)Ii-vi Compound Semiconductor (e.g., Hgcdte) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.10/26/06 - 20060237811 - Non-destructive, in-line characterization of semiconductor materials A method for non-destructively determining parameters of a doped semiconductor material involves applying an excitation to a surface of the semiconductor material to photogenerate minority carriers in a region of the semiconductor material, presenting an electric field across the region of the semiconductor material, measuring photoluminescence produced by recombination of ... 03/30/06 - 20060065943 - Thin film alternating current solid-state lighting Group IV semiconductor nanocrystal doped with rare earths or other light emitting metal to form alternating current solid-state devices that can be designed to operate at a variety of voltages including line voltages. The semiconductor nanocrystals are preferably silicon, silicon carbide, germanium or germanium carbide, and the electric luminescent device ... 01/05/06 - 20060001119 - Iii-v semiconductor nanocrystal complexes and methods of making same A semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material. A method of making a semiconductor nanocrystal complex is also provided. The method includes synthesizing a semiconductor nanocrystal core of a III-V ... ### FreshPatents.com Support |