FREE patent keyword monitoring and additional FREE benefits. http://images1.freshpatents.com/images/triangleright (1K) REGISTER now for FREE triangleleft (1K)
FreshPatents.com Logo    FreshPatents.com icons
Monitor Keywords Patent Organizer File a Provisional Patent Browse Inventors Browse Industry Browse Agents


Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Responsive To Non-electrical Signal (e.g., Chemical, Stress, Light, Or Magnetic Field Sensors) > Electromagnetic Or Particle Radiation > Light > With Optical Element

With Optical Element

With Optical Element patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

04/24/14 - 20140110805 - Silicon light trap devices, systems and methods
Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase...

04/24/14 - 20140110806 - Solid-state imaging device and method of manufacturing solid-state imaging device
According to one embodiment, a solid-state imaging device includes a photoelectric conversion element, a fixed charge layer, a silicon nitride film, and a silicon oxide film. The photoelectric conversion element performs photoelectric conversion of converting incident light into the amount of charges corresponding to the amount of received light, and...

04/24/14 - 20140110807 - Camera module
A camera module has a sensor chip including a sensor unit formed on a main surface around which sides are disposed. A lens chip is fixed to the sensor chip with a spacer unit and includes a lens unit corresponding to the sensor unit. A light shieldable layer covers a...

04/24/14 - 20140110808 - Photodiode and photodiode array
A photodiode array PDA1 is provided with a substrate S wherein a plurality of photodetecting channels CH have an n-type semiconductor layer 32. The photodiode array PDA1 is provided with a p− type semiconductor layer 33 formed on the n-type semiconductor layer 32, resistors 24 provided for the respective photodetecting...

04/17/14 - 20140103476 - Method for making image sensors using wafer-level processing and associated devices
A method of making image sensor devices may include forming a sensor layer including image sensor ICs in an encapsulation material, bonding a spacer layer to the sensor layer, the spacer layer having openings therein and aligned with the image sensor ICs, and bonding a lens layer to the spacer...

04/17/14 - 20140103477 - Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus
A solid-state imaging device with a pixel region in which a plurality of pixels with photoelectric conversion films are arrayed and pixel isolation portions are interposed between the plurality of pixels. The photoelectric conversion film is a chalcopyrite-structure compound semiconductor composed of a copper-aluminum-gallium-indium-sulfur-selenium based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium...

04/17/14 - 20140103478 - Solid-state imaging device and imaging apparatus
A solid-state imaging device includes: unit pixels each having a light-receiving element which is divided into line widths shorter than or equal to a wavelength of light; a plurality of light-transmissive films in a concentric structure; and an effective refractive index distribution. Among the light-transmissive films, a light-transmissive film closest...

04/10/14 - 20140097510 - Photodiode and method for producing the same, photodiode array, spectrophotometer and solid-state imaging device
Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulator layer, and is smaller than a penetration depth of ultraviolet light....

04/03/14 - 20140091415 - Solid-state imaging apparatus, manufacturing method for the same, and electronic apparatus
A solid-state imaging apparatus includes a semiconductor substrate, an upper layer film, and on-chip lenses. On the semiconductor substrate, a plurality of pixels are formed. The upper layer film is laminated on the semiconductor substrate. The on-chip lenses are formed on the upper layer film so as to correspond to...

04/03/14 - 20140091416 - Photoelectric conversion apparatus and manufacturing method for a photoelectric conversion apparatus
A photoelectric conversion apparatus has multiple photoelectric converting units disposed in a semiconductor substrate, and isolation portions disposed in the semiconductor substrate. Each photoelectric converting unit includes a second semiconductor region, a third semiconductor region, disposed below the second semiconductor region and a fourth semiconductor region disposed below the third...

04/03/14 - 20140091417 - Low refractive index coating deposited by remote plasma cvd
A method of depositing a low refractive index coating on a photo-active feature on a substrate comprises forming a substrate having one or more photo-active features thereon and placing the substrate in a process zone. A deposition gas is energized in a remote gas energizer, the deposition gas comprising a...

04/03/14 - 20140091418 - Color filter, ccd sensor, cmos sensor, organic cmos sensor, and solid-state image sensor
A color filter includes: a red pixel in which a transmittance of a light having a wavelength of 400 nm is 15% or less, and a transmittance of a light having a wavelength of 650 nm is 90% or more; a green pixel in which a transmittance of a light...

04/03/14 - 20140091419 - Optical filter, solid-state imaging element, imaging device lens and imaging device
The present invention relates to an optical filter, a solid-state imaging element and an imaging device lens which contain a near infrared ray absorbing layer having a specific near infrared ray absorbing dye dispersed in a transparent resin having a refractive index of 1.54 or more, and also relates to...

03/27/14 - 20140084404 - Imaging device
An imaging device includes: an R pixel that is made of an organic material and includes a photodiode on which an organic film color filter that transmits red light is formed; a G pixel that is made of an organic material and includes a photodiode on which an organic film...

03/27/14 - 20140084405 - Imaging apparatus
An imaging apparatus comprising an optically transmissive first substrate which includes a first surface, a plurality of lenses which oppose the first surface and focus incident light from the opposite side to the first substrate, a light emitting layer on a surface of the first surface, and a plurality of...

03/27/14 - 20140084406 - Method of manufacturing solid state imaging device, and solid state imaging device
Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light...

03/20/14 - 20140077322 - Waveguide-based energy converters, and energy conversion cells using same
A layered waveguide stack radiant energy converter array having a plurality of superposed waveguides, each waveguide having a core layer having a radiant energy converter disposed therein, and two cladding layers disposed on opposing sides of the core. In some embodiments the conductive layers are electrically coupled to the converter...

03/20/14 - 20140077323 - Imaging systems with backside illuminated near infrared imaging pixels
An imaging system may include an image sensor having backside illuminated near infrared image sensor pixels. Each pixel may be formed in a graded epitaxial substrate layer such as a graded n-type epitaxial layer. Each pixel may be separated from an adjacent pixel by an isolation trench formed in the...

03/20/14 - 20140077324 - Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus
A solid-state image pickup device includes: a plurality of pixels each including an organic photoelectric conversion layer; a sealing layer that covers the pixels; and a first lens section provided for each of the pixels and provided on a side, of the sealing layer, on which the organic photoelectric conversion...

03/20/14 - 20140077325 - Imaging pixels with improved photodiode structures
A photodiodes may be formed on a substrate such as an imager substrate. The photodiode may include first and second layers in the substrate that form a p-n junction. The first layer may have a first doping type such as p-type doping, whereas the second layer may have a second,...

03/20/14 - 20140077326 - Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic equipment
A solid-state imaging device includes a photoelectric transformation portion and a micro lens, the micro lens has a first refractive index layer which is a first refractive index and a second refractive index layer which is a second refractive index different from the first refractive index, wherein the micro lens...

03/13/14 - 20140070348 - Methods and apparatus for sensor module
Methods and apparatus for integrating a CMOS image sensor and an image signal processor (ISP) together using an interposer to form a system in package device module are disclosed. The device module may comprise an interposer with a substrate. An interposer contact is formed within the substrate. A sensor device...

03/13/14 - 20140070349 - Low profile image sensor package and method
An image sensor package, and method of making same, that includes a printed circuit board having a first substrate with an aperture extending therethrough, one or more circuit layers, and a plurality of first contact pads electrically coupled to the one or more circuit layers. A sensor chip mounted to...

03/13/14 - 20140070350 - Sensor substrate, method of manufacturing the same and sensing display panel having the same
A sensor substrate includes a blocking pattern disposed on a base substrate, a first electrode disposed on the base substrate and overlapping the blocking pattern , the first electrode including a plurality of first unit parts arranged in a first direction, each of the first unit parts including a plurality...

03/13/14 - 20140070351 - Method for manufacturing optical waveguide receiver and optical waveguide receiver
A method for manufacturing an optical waveguide receiver includes the steps of growing first and second stacked semiconductor layer sections, the second stacked semiconductor layer section including a core layer and a cladding layer; forming a first mask including first and second portions; etching the first and second stacked semiconductor...

03/06/14 - 20140061833 - Infrared multiplier for photo-conducting sensors
Photo-conducting infrared sensors are provided including a substrate (e.g., silicon) with one or more trenches formed on a first surface. An infrared-reflective film can be deposited directly or indirectly onto and conforming in shape with the first surface of the substrate. A lead chalcogenide film can be deposited directly or...

03/06/14 - 20140061834 - Solid-state imaging device, manufacturing method and designing method thereof, and electronic device
A solid-state imaging device including pixel photododes on a light-receiving surface of a substrate; a first insulating film on the substrate covering a multilayer wiring on and in contact with the substrate. The first insulating film comprises material of a first refractive index lower than a refractive index of the...

03/06/14 - 20140061835 - Semiconductor light-detecting element
Prepared is an n− type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor...

03/06/14 - 20140061836 - Color filter array, imagers and systems having same, and methods of fabrication and use thereof
A pixel cell with a photosensitive region formed in association with a substrate, a color filter formed over the photosensitive region, the color filter comprising a first material layer and a second material layer formed in association with the first shaping material layer....

03/06/14 - 20140061837 - Image sensor including multiple lenses and method of manufacture thereof
A device includes an image sensing element. The device also includes a Silicon Dioxide (SiO2) layer, located over the image sensing element, exhibiting a first index of refraction. The device further includes a first lens, located over the SiO2 layer, exhibiting a second index of refraction greater than the first...

02/27/14 - 20140054736 - Method and apparatus for reducing signal loss in a photo detector
Photonic structures and methods of formation are disclosed in which a photo detector interface having crystalline misfit dislocations is displaced with respect to a waveguide core to reduce effects of dark current on a detected optical signal....

02/27/14 - 20140054737 - Solid-state imaging device and method for fabricating the same
A solid-state imaging device includes: a substrate; an insulator layer formed on the substrate; a semiconductor layer formed on the insulator layer; and a silicon layer formed on the semiconductor layer. The silicon layer includes a plurality of pixels each including a photoelectric converter configured to convert light into signal...

02/27/14 - 20140054738 - Curable resin composition, optical member set, method of producing the same, and solid state imaging device using the same
A curable resin composition, for forming a first optical member of an optical member set, the optical member having the first optical member and a second optical member covered with the first optical member, the first optical member being formed by curing a siloxane resin, comprising: a siloxane resin, a...

02/20/14 - 20140048898 - Backside illuminated cmos image sensor
A backside illuminated (BSI) CMOS image sensor is disclosed. The BSI CMOS image sensor includes: a substrate having a front side and a back side, the substrate including a photodiode formed therein, the photodiode being proximate the back side of the substrate; a metal shielding layer covering the back side...

02/13/14 - 20140042576 - Photoelectric conversion apparatus
A photoelectric conversion apparatus includes a lens array including a plurality of convex meniscus lenses. Each of the convex meniscus lenses is provided between a first member and a second member. The first member has a lower refractive index than each of the convex meniscus lenses and has convex surfaces...

02/13/14 - 20140042577 - Solid-state imaging device and imaging apparatus
A first substrate has a plurality of photoelectric conversion units arranged in two dimensions. A second substrate has a plurality of photoelectric conversion units arranged in two dimensions. A plurality of photoelectric conversion units are arranged in a region of the second substrate corresponding to a region of the first...

02/13/14 - 20140042578 - Solid-state imaging apparatus and camera using the same
A solid-state imaging device and one or more bare ICs disposed on a back face of a solid-state imaging apparatus. The bare ICs are sealed by a resin. A circuit board may be interposed between the solid-state imaging device and the bare ICs, or the solid-state imaging device and the...

02/13/14 - 20140042579 - Image sensor comprising a digital-alloy microlens array, and manufacturing method thereof
The present invention relates to an image sensor comprising a microlens array, and to a manufacturing method thereof. The method of the present invention includes gradually increasing the aluminum composition ratio of a compound semiconductor as the latter gradually gets farther from a substrate, to enable a microlens-forming layer to...

02/06/14 - 20140035078 - Substrate connection type module structure
The present invention provides a substrate connection type module structure comprising a substrate with a through hole structure and a first contact pad. A chip is configured on the through hole structure of the substrate, with a second contact pad and a sensing area. The first contact pad is coupled...

02/06/14 - 20140035079 - Window type camera module structure
The present invention provides a window type camera module structure comprising a first substrate. A chip is configured on the first substrate, with a first contact pad and a sensing area. A second substrate is disposed on the first substrate, with a through hole structure and a second contact pad,...

02/06/14 - 20140035080 - Wafer level camera module structure
The present invention provides a wafer level camera module structure comprising a chip with a sensing area. A TSV structure is formed by passing through from the top surface to the bottom surface of the chip. A transparent material is disposed on the chip, with at least one conductive via...

02/06/14 - 20140035081 - Substrate inside type module structure
The present invention provides a module structure of substrate inside type comprising a first substrate with a concave structure. A chip is configured on the concave structure of the first substrate, with a first contact pad and a sensing area. A second substrate is disposed on the first substrate, with...

02/06/14 - 20140035082 - Elevated photodiodes with crosstalk isolation
A device includes a plurality of isolation spacers, and a plurality of bottom electrodes, wherein adjacent ones of the plurality of bottom electrodes are insulated from each other by respective ones of the plurality of isolation spacers. A plurality of photoelectrical conversion regions overlaps the plurality of bottom electrodes, wherein...

02/06/14 - 20140035083 - Elevated photodiode with a stacked scheme
A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode....

02/06/14 - 20140035084 - Method of direct tiling of an image sensor array
A method of making a tiled array of semiconductor dies includes aligning and flattening. One end of each semiconductor die has attached thereto a respective printed circuit board. The aligning aligns the semiconductor dies into the tiled array in such a way that the semiconductor dies rest on a vacuum...

02/06/14 - 20140035085 - Photoelectric conversion device and manufacturing method thereof
A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region...

02/06/14 - 20140035086 - Solid-state image sensor
A solid-state image sensor includes a semiconductor layer having photoelectric conversion portions, and a wiring structure arranged on a side of a first face of the semiconductor layer, and receives light from a side of a second face of the semiconductor layer. The wiring structure includes a reflection portion having...

01/30/14 - 20140027872 - Cis chips and methods for forming the same
A device includes a semiconductor substrate, an image sensor at a front surface of the semiconductor substrate, and a plurality of dielectric layers over the image sensor. A color filter and a micro lens are disposed over the plurality of dielectric layers and aligned to the image sensor. A through...

01/30/14 - 20140027873 - Semiconductor device and manufacturing method thereof
A semiconductor device and a manufacturing method thereof are provided which can suppress corrosion by chemicals in processes, while preventing generation of thermal stress on a mark. A semiconductor device includes a semiconductor layer with a front-side main surface and a back-side main surface opposed to the front-side main surface,...

01/30/14 - 20140027874 - Solid-state imaging device and method for manufacturing the same
A solid-state imaging device includes: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate. The multilayer interconnect part includes an insulating...

01/30/14 - 20140027875 - Photoelectric conversion device and method for producing photoelectric conversion device
In this method for producing a photoelectric conversion device: an i-type non-crystalline layer and an n-type non-crystalline layer comprising a non-crystalline semiconductor film are formed on the light-receiving surface of a semiconductor substrate; an i-type non-crystalline layer and an n-type non-crystalline layer comprising a non-crystalline semiconductor film are formed on...

01/30/14 - 20140027876 - Light sensor having ir cut and color pass interference filter integrated on-chip
A light sensor is described that includes an IR interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are disposed proximate to the surface of the substrate. An IR interference filter is disposed...