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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Responsive To Non-electrical Signal (e.g., Chemical, Stress, Light, Or Magnetic Field Sensors) > Electromagnetic Or Particle Radiation > Light > With Optical Element

With Optical Element

With Optical Element patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

08/28/14 - 20140239430 - Solid-state imaging device
According to one embodiment, a photoelectric converting layer, a charge accumulating layer, and a light collecting unit are provided. The photoelectric converting layer is formed at a back surface side of a semiconductor substrate. The charge accumulating layer is formed at a front surface side of the semiconductor substrate, and...

08/28/14 - 20140239431 - Image sensor and computing system having the same
An image sensor includes a light receiving element, an anti-reflection layer, a high refractive pattern, a color filter, and a micro lens. The light receiving element is formed on a semiconductor substrate to generate charges responsive to incident light. The anti-reflection layer is formed on the semiconductor substrate. The high...

08/21/14 - 20140231946 - Waveguide avalanche photodetectors
Devices comprised of end-on waveguide-coupled photodetectors are described. in embodiments of the invention, the pbotodetectors are avalanche photodiodes coupled end-on to a waveguide. The waveguide comprises an insulating trench proximate to the coupled photodetector. In embodiments of the invention, the avalanche photodiodes are silicin/germanium avalanche photodiodes....

08/21/14 - 20140231947 - Semiconductor module
A semiconductor module including a semiconductor chip having a light receiving device formed at a front thereof and light permeable cover having a front, a back, and a side. The light permeable cover is disposed opposite to the front of the semiconductor chip such that the front of the semiconductor...

08/14/14 - 20140225210 - Solid-state imaging device, production method of the same, and imaging apparatus
A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side...

08/07/14 - 20140217536 - Polarized light detection system
A polarized light detection system includes a detection apparatus, a power source, and a photoresistor. The detection apparatus, power source and photoresistor are electrically connected with wires to form a galvanic circle. The photoresistor includes a photosensitive material layer with a first surface and a second surface opposite to each...

08/07/14 - 20140217537 - Re-entrant mirror photodetector with waveguide mode focusing
A photonic integrated circuit (I/C) includes a focusing sidewall or in-plane surface that redirects and focuses light from a waveguide to a photodetector structure. The focusing includes redirecting an optical signal to a width smaller than a width of the waveguide. The focusing of the light allows the photodetector structure...

08/07/14 - 20140217538 - Solid-state image sensor and camera
A solid-state image sensor includes a structure having a semiconductor layer in which a plurality of photoelectric converters are arranged, a light blocking member arranged above a face of the structure and including a plurality of circular openings each corresponding to at least one of the photoelectric converters, a first...

08/07/14 - 20140217539 - Semiconductor optoelectronics devices
A semiconductor device comprising a semiconductor substrate with a plurality of photo-diodes arranged in the semiconductor substrate with interconnect layers defining apertures at the photo-diodes and a first polymer which fills the gaps such as to cover the photo-diode. Further, layers of color filters are arranged on top the gap...

07/31/14 - 20140210028 - Color filter including clear pixel and hard mask
Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first...

07/31/14 - 20140210029 - Backside illumination image sensor chips and methods for forming the same
A die includes a first plurality of edges, and a semiconductor substrate in the die. The semiconductor substrate includes a first portion including a second plurality of edges misaligned with respective ones of the first plurality of edges. The semiconductor substrate further includes a second portion extending from one of...

07/31/14 - 20140210030 - Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes: a photoelectric conversion section made of semiconductor; a color filter made of an inorganic material to which a metal ion is added; and a getter film formed between the photoelectric conversion section and the color filter and configured to trap the metal ion....

07/31/14 - 20140210031 - Variable optical filter and a wavelength-selective sensor based thereon
A variable optical filter is disclosed including a bandpass filter and a blocking filter. The bandpass filter includes a stack of alternating first and second layers, and the blocking filter includes a stack of alternating third and fourth layers. The first, second and fourth materials each comprise different materials, so...

07/31/14 - 20140210032 - Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus
The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 11 and a photoelectric conversion part formed in the semiconductor substrate 11. In the solid-state imaging...

07/31/14 - 20140210033 - Solid-state imaging device and method for manufacturing the same
In a pixel unit of a solid-state imaging device, a semiconductor substrate is provided with a plurality of photodiodes, a first insulating film includes a recess in a portion above each of the photodiodes, a second insulating film embeds the recess, a plurality of color filters is formed on the...

07/24/14 - 20140203388 - Optical sensor with integrated pinhole
An optical sensor includes a semiconductor substrate having a first conductive type. The optical sensor further includes a photodiode disposed on the semiconductor substrate and a metal layer. The photodiode includes a first semiconductor layer having the first conductive type and a second semiconductor layer, formed on the first semiconductor...

07/24/14 - 20140203389 - Solid-state photodetector pixel and photodetecting method
A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate...

07/24/14 - 20140203390 - Solid-state imaging device and electronic apparatus
An solid-state imaging device includes a pixel region formed on a semiconductor substrate, an effective pixel region and a shielded optical black region in the pixel region, a multilayer wiring layer formed on a surface of the side opposite to a light incident side of the semiconductor substrate, a supporting...

07/17/14 - 20140197507 - Buried waveguide photodetector
A method of forming an integrated photonic semiconductor structure having a photodetector and a CMOS device may include forming the CMOS device on a first silicon-on-insulator region, forming a silicon optical waveguide on a second silicon-on-insulator region, and forming a shallow trench isolation (STI) region surrounding the silicon optical waveguide...

07/17/14 - 20140197508 - Image sensor and method for fabricating the same
An image sensor comprises a substrate, a plurality of image sensing elements and a first inorganic optical layer, wherein the substrate has an active region; the image sensing elements are disposed in the active region; and the first inorganic optical layer covers the image sensing elements and has at least...

07/17/14 - 20140197509 - Photosensitive imaging devices and associated methods
Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a...

07/17/14 - 20140197510 - Conversion structure, image sensor assembly and method for fabricating conversion structure
An electromagnetic wave conversion structure consists of a substrate, a plurality of electromagnetic wave conversion units forming a two-dimensional array, a reflective film and a plurality of reflective layers. The substrate has a first surface and a second surface disposed opposite to the first surface. The second surface consists of...

07/17/14 - 20140197511 - Methods for forming backside illuminated image sensors with front side metal redistribution layers
Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior...

07/10/14 - 20140191349 - Solid-state imaging apparatus and method of manufacturing the same
The present invention provides a solid-state imaging apparatus which has hollow portions provided around each of color filters and achieves the prevention of the peeling of each of the color filters. The solid-state imaging apparatus having a plurality of light receiving portions provided on a semiconductor substrate includes: a plurality...

07/10/14 - 20140191350 - Image sensor chip package and fabricating method thereof
An image sensor chip package is disclosed, which includes a substrate, an image sensor component formed on the substrate, a spacer formed on the substrate and surrounding the image sensor component, and a transparent plate. A stress notch is formed on a side of the transparent plate, and a breaking...

07/10/14 - 20140191351 - Miniature phase-corrected antennas for high resolution focal plane thz imaging arrays
An imaging/detection device includes a hemispherical lens having a surface opposite a curvature of the hemispherical lens, where the hemispherical lens defines an optical axis. The imaging/detection device also includes a plurality of detectors arranged on a focal plane array that is positioned near the surface of the hemispherical lens....

07/03/14 - 20140183677 - Optical semiconductor device
The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing...

06/26/14 - 20140175586 - Image sensor and method for fabricating the same
An image sensor and a method for fabricating the image sensor are provided. The image sensor includes a substrate having a plurality of unit pixel regions. A light absorption layer is formed on the substrate. A plurality of overlapping color filters are formed on the light absorbing layer....

06/26/14 - 20140175587 - Devices and methods for absorbing light
A light-absorbing device and method employ a series of photon-absorbing semiconductor substructures. A first semiconductor substructure provides first and second energy states. A difference between the first and second states being such as to cause an electron to be promoted from the first state to the second state upon absorption...

06/26/14 - 20140175588 - Suspension and absorber structure for bolometer
A semiconductor device includes a substrate having an upper surface that defines a sensing region. A fixed beam structure is supported at a first level above the sensing region. The fixed beam structure includes fixed beam supports that extend upwardly from the upper surface of the substrate to position the...

06/26/14 - 20140175589 - Light receiving device
A light receiving element includes a core configured to propagate a signal light, a first semiconductor layer having a first conductivity type, the first semiconductor layer being configured to receive the signal light from the core along a first direction in which the core extends, an absorbing layer configured to...

06/19/14 - 20140167195 - Optimizing geometric fill factor in prism-coupled waveguide-fed solar collector
A prism coupled waveguide-fed solar collector array optimized for geometric fill factor. An integrated linear array of prisms is arranged with their input faces in a common plane. The exit faces of the prisms each feds a corresponding optical waveguide and detector....

06/19/14 - 20140167196 - Optical modules including focal length adjustment and fabrication of the optical modules
Fabricating optical devices can include mounting a plurality of singulated lens systems over a substrate, adjusting a thickness of the substrate below at least some of the lens systems to provide respective focal length corrections for the lens systems, and subsequently separating the substrate into a plurality of optical modules,...

06/12/14 - 20140159182 - Semiconductor device and method for manufacturing a semiconductor device having an undulating reflective surface of an electrode
A method for manufacturing a semiconductor device includes providing a substrate and a back electrode disposed between the substrate and an active semiconductor layer. The back electrode has a reflective layer that is reflective to at least one wavelength of light and includes a reflective surface having an undulating profile...

06/12/14 - 20140159183 - High-efficiency bandwidth product germanium photodetector
A high-efficiency bandwidth product germanium photodetector includes a silicon substrate having an opening-down three-sided groove formed by etching; a metallic reflective mirror layer formed by plating along an internal periphery of the opening-down three-sided groove of the silicon substrate; a light absorbent layer between the metallic reflective mirror layer and...

06/12/14 - 20140159184 - Image sensor and method for fabricating the same
An image sensor includes a substrate including a plurality of unit pixel regions, a color filter formed over the substrate so as to correspond to each of the unit pixel regions, and a light absorption unit formed in the substrate under the color filter....

06/05/14 - 20140151833 - Photoelectric conversion device
A photoelectric conversion device according to an exemplary embodiment includes a first substrate, a photoelectric conversion layer disposed above the first substrate, a second substrate which is different from the first substrate and disposed on the photoelectric conversion layer, and a nano pillar layer disposed above the second substrate in...

06/05/14 - 20140151834 - Mems infrared sensor including a plasmonic lens
A method of fabricating a semiconductor device includes forming an absorber on a substrate, and supporting a cap layer over the substrate to define a cavity between the substrate and the cap layer in which the absorber is located. The method further includes forming a lens layer on the cap...

06/05/14 - 20140151835 - Backside illuminated image sensors and method of making the same
A backside illuminated image sensor includes a substrate with a substrate depth, where the substrate includes a pixel region and a peripheral region. The substrate further includes a front surface and a back surface. The backside illuminated image sensor includes a first isolation structure formed in the pixel region of...

06/05/14 - 20140151836 - Optical semiconductor apparatus
The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes...

06/05/14 - 20140151837 - Image sensor
An image sensor includes an objective lens arranged on an optical axis; a substrate including a plurality of photoelectric conversion devices; and a micro lens layer including a plurality of micro lenses corresponding to each of the plurality of photoelectric conversion devices, respectively, wherein the plurality of micro lenses includes...

05/29/14 - 20140145282 - Image sensor and process thereof
An image sensor includes a plurality of color filters and an anti-reflective layer. The color filters are located on a substrate. The anti-reflective layer is located between the substrate and the color filters, and parts of the anti-reflective layer corresponding to at least two of the color filters have different...

05/29/14 - 20140145283 - Photodiode with concave reflector
A photodiode structure includes a photodiode and a concave reflector disposed below the photodiode. The concave reflector is arranged to reflect incident light from above back toward the photodiode....

05/29/14 - 20140145284 - Photodiode for an image sensor and method of fabricating the same
A photodiode for an image sensor and a method of fabricating the photodiode are disclosed. The photodiode includes a substrate having a surface defined as a light-incident surface of the photodiode, wherein a plurality of convex structures are provided on the light-incident surface of the photodiode, namely, a non-planar light-incident...

05/29/14 - 20140145285 - Solid-state imaging device and method for manufacturing the same
A solid state imaging device includes a substrate having a plurality of pixels and a plurality of on-chip lenses arranged above the substrate, each on-chip lens having a lens surface formed by subjecting a transparent photosensitive film to exposure using a mask having a gradation pattern and development so that...

05/29/14 - 20140145286 - Colored composition, method of producing color filter using the same, color filter and solid-state imaging device
The invention is directed to a colored composition containing a coloring agent and a resin, wherein a content of the coloring agent to a total solid content of the colored composition is 50% by weight or more and a solid content acid value of the resin is more than 80...

05/29/14 - 20140145287 - Solid-state image sensor
An image sensor includes a first pixel having a first color filter, a first reflection region which reflects light from the first color filter, and a first photoelectric conversion portion arranged in a semiconductor layer and located between the first color filter and the first reflection region, and a second...

05/22/14 - 20140138784 - Photodetectors useful as ambient light sensors and methods for use in manufacturing the same
Photodetectors, methods for use in manufacturing photodetectors, and systems including photodetectors, are described herein. In an embodiment, a photodetector includes a plurality of photodiode regions, at least some of which are covered by an optical filter. A plurality of metal layers are located between the photodiode regions and the optical...

05/22/14 - 20140138785 - Pixel isolation elements, devices, and associated methods
Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least...

05/22/14 - 20140138786 - High density capacitor integrated into focal plane array processing flow
Methods and structures of photodetectors are described. The structure may include a readout integrated circuit substrate having an internally integrated capacitor. The structure may additionally include an external capacitor overlying the readout integrated circuit substrate. The external capacitor may be coupled with the internally integrated capacitor of the readout integrated...

05/22/14 - 20140138787 - Avalanche photodetector element
An avalanche photodetector element is disclosed for converting an optical signal to an electrical signal, comprising an input waveguide and a photodetector region, the photodetector region comprising at least one intrinsic region, at least one p-doped region and at least one n-doped region, the doped regions and the at least...