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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Responsive To Non-electrical Signal (e.g., Chemical, Stress, Light, Or Magnetic Field Sensors) > Electromagnetic Or Particle Radiation > Light LightLight patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/31/08 - 20080023779 - Photoelectric conversion element In a photoelectric conversion element which generates electrical signals upon the incidence of light, a superlattice structure having a metal layer or metal silicide layer and a polysilicon layer is formed on a silicon substrate, the photoelectric conversion element has a three-terminal structure in which the metal layer or metal ... 01/17/08 - 20080012082 - Large area flat image sensor assembly A low temperature method for producing a substantially flat large area image sensor assembly, the method includes the steps of providing a die attach substrate having a substantially planar surface; providing a lead frame having a bonding surface and a plurality of leads extending there from; adhering an imager die ... 12/20/07 - 20070290283 - Solar cell and manufacturing method thereof A solar cell and a manufacturing method thereof. A method of manufacturing a solar cell includes: forming an emitter layer on a first surface of a semiconductor substrate; forming an insulation layer on the emitter layer; applying a chemical compound including a dopant having a conductive type of the emitter ... 10/25/07 - 20070246788 - N-well barrier pixels for improved protection of dark reference columns and rows from blooming and crosstalk The barrier region for isolating one or more dark regions of the pixel array of an image sensor from the active array or from the peripheral circuitry includes N-well pixel isolation region. The N-well pixel isolation region includes at least one N-well implant or at least one N-well stripe. The ... 10/18/07 - 20070241416 - Solid state image pickup device and manufacturing method thereof and semiconductor integrated circuit device and manufacturing method thereof A method of manufacturing a solid-state image pickup device comprises a process for forming a plurality of photoelectric conversion elements PD within a semiconductor substrate 4, a process for forming an interconnection portion, having an interconnection layer 8 in an insulating layer 7, on the surface side of the semiconductor ... 09/27/07 - 20070222013 - Nanoscale volumetric imaging device The invention provides an imaging device comprised of nanoscale crossbar arrays upon a transmissive medium. The preferred embodiment employs a BOPET film as the transparent material bearing addressable nanoscale arrays, and the arrays connected to leads through micro lithographic techniques, and in turn connected to a logic device. An imaging ... 09/20/07 - 20070215968 - Front side electrical contact for photodetector array and method of making same A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the photodiode into a plurality of cells and forming a ... 09/13/07 - 20070210397 - Photoelectric conversion device, image sensor, and method of manufacturing a photoelectric conversion device Provided is a photoelectric conversion device including: a semiconductor substrate (3) of a first conductivity type; a photoelectric conversion region (7) of a second conductivity type which is located in the semiconductor substrate (3), the second conductivity type being opposite to the first conductivity type; and a buried layer (17) ... 09/13/07 - 20070210396 - Photoelectric conversion device and image sensor A photoelectric conversion device (10) includes a first conductivity type first semiconductor region (10a) located in a pixel region (11), a second conductivity type second semiconductor region (12) provided in the first semiconductor region (10a), for storing a signal charge, interconnecting portions (13 and 14) for connecting the second semiconductor ... 09/13/07 - 20070210395 - Solid-state imaging device, method for producing same, and camera A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer ... 09/06/07 - 20070205478 - Photodiode having increased proportion of light-sensitive area to light-insensitive area A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer having a second conductivity opposite the first conductivity, and an intrinsic ... 08/30/07 - 20070200189 - Semiconductor device and method of manufacturing semiconductor device Provided is a semiconductor device for performing photoelectric conversion of incident light, including: a p-type substrate (1), an n-type well (2) having a predetermined depth and formed in a predetermined region of the p-type substrate (1), and a depletion layer generated at a junction interface between the p-type substrate (1) ... 08/16/07 - 20070187788 - Solid-state image sensor using junction gate type field-effect transistor as pixel A source region and drain region are formed in a surface region of a first semiconductor region. Moreover, a second semiconductor region connected to the drain region is formed in the surface region of the first semiconductor region. A third semiconductor region is formed in the first semiconductor region under ... 07/26/07 - 20070170534 - Optical sensing apparatus with a noise interference rejection function An optical sensing apparatus with a signal interference rejection function is fabricated in a semiconductor chip by using a CMOS process. The optical sensing apparatus comprises an optical sensing element having a light-receiving side for receiving an optical signal from the light-receiving side and converting the optical signal into an ... 07/19/07 - 20070164385 - Germanium/silicon avalanche photodetector with separate absorption and multiplication regions A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of ... 07/19/07 - 20070164384 - Solid-state imaging device and method for manufacturing the same The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon ... 07/12/07 - 20070158771 - Stratified photodiode for high resolution cmos image sensor implemented with sti technology A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions of the first conductivity type, and a pinning layer. The multiple doping regions ... 07/12/07 - 20070158770 - Time-of-light flight type distance sensor A lower cost range-finding image sensor based upon measurement of reflection time of light with reduced fabrication processes compared to standard CMOS manufacturing procedures. An oxide film is formed on a silicon substrate, and two photo-gate electrodes for charge-transfer are provided on the oxide film. Floating diffusion layers for taking ... 07/05/07 - 20070152289 - Avalanche photodetector with reflector-based responsivity enhancement An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor. The first type of semiconductor material has a graded doping concentration of a dopant material within the absorption region. A multiplication region is proximate to and ... 06/28/07 - 20070145503 - Pixel structure with improved charge transfer An active pixel is described comprising a semiconductor substrate and a radiation sensitive source of carriers in the substrate, such as for instance, a photodiode. A non-carrier storing, carrier collecting region in the substrate is provided for attracting carriers from the source as they are generated. At least one doped ... 06/07/07 - 20070126073 - Novel poly diode structure for photo diode An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, ... 05/24/07 - 20070114627 - Photodetector with an improved resolution A photodetector made in monolithic form in a lightly-doped substrate of a first conductivity type. This photodetector comprises at least two photodiodes and comprises a first region of the first conductivity type more heavily doped than the substrate extending at least between the two photodiodes; and a second region of ... 05/24/07 - 20070114626 - Photodiode device and photodiode array for optical sensor using the same The invention relates a photodiode device and a photodiode array using the same capable of detecting short and long wavelengths of visible light at a high efficiency. The photodiode device includes: a first conductivity type semiconductor substrate; a second conductivity type buried layer, an intrinsic semiconductor layer and a first ... 05/24/07 - 20070114625 - Image tft array of a direct x-ray image sensor and method of fabricating the same A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming ... 05/03/07 - 20070096233 - Cmos image sensor A CMOS image sensor includes a semiconductor substrate with an active area. A photodiode and a plurality of transistors may be formed on the active area. The active area has a portion with a variable width below a reset transistor. ... 05/03/07 - 20070096232 - Cmos image sensor and method for manufacturing the same A CIS and a method for manufacturing the same are provided. The CIS includes an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon; a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other; ... 05/03/07 - 20070096231 - Photonic configuration An apparatus comprising an integrated circuit having a plurality of devices each having device characteristics, and a waveguide structure coupled to the integrated circuit, wherein photons provided to the waveguide structure are directed to one or more devices of the plurality of devices and can alter the device characteristics of ... 04/26/07 - 20070090477 - Photodiode array, method for manufacturing same, and radiation detector A theme is to prevent the generation of noise due to damage in a photodetecting portion in a mounting process in a photodiode array, a method of manufacturing the same, and a radiation detector. In a photodiode array, wherein a plurality of the photodiodes (4) are formed in array form ... 04/12/07 - 20070080413 - Cmos image sensor and method for manufacturing the same A CMOS image sensor is provided. The CMOS image sensor incorporates a semiconductor substrate having a photodiode area and a transistor area; a trench area formed in the photodiode area; a transistor and a floating diffusion area formed on the transistor area; a first conductive type diffusion area formed on ... 03/29/07 - 20070069317 - Optoelectronics processing module and method for manufacturing thereof An optoelectronics processing module includes a transparent substrate and at least one optoelectronics component. One surface of the transparent substrate is formed with a plurality of first pads and a plurality of second pads. The optoelectronics component mounted on the transparent substrate has a plurality of connecting pads, which is ... 03/29/07 - 20070069316 - Image sensor having dual gate pattern and method of manufacturing the same An image sensor capable of improving the performance of a transistor of a peripheral circuit region while maintaining high picture quality, and a method of manufacturing the same are disclosed. The image sensor may include a semiconductor substrate having an active pixel region and a peripheral circuit region, a first ... 03/29/07 - 20070069315 - Photodetector and n-layer structure for improved collection efficiency An image sensor with an image area having a plurality of photodetectors of a first conductivity type includes a substrate of the second conductivity type; a first layer of the first conductivity type spanning the image area; a second layer of the second conductivity type; wherein the first layer is ... 03/15/07 - 20070057337 - Semiconductor device A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. ... 03/08/07 - 20070052049 - Integrated opto-electric spr sensor An integrated opto-electric sensor includes a wavenumber matching structure that is integrated onto a silicon substrate, and a first conductive electrode that is adjacent to one of a lightly doped and an undoped region in the silicon substrate to form a Schottky junction. A dielectric is positioned adjacent to the ... 03/08/07 - 20070052048 - Strain compensated high electron mobility transistor A semiconductor structure having a III-V substrate; a first III-V donor layer having a relatively wide bandgap disposed over the substrate; a III-V channel layer having a relatively narrow bandgap disposed on the donor layer; a second III-V donor layer disposed on the channel layer having a relatively wide bandgap. ... 03/01/07 - 20070045760 - Photoelectric conversion device, imaging device, and process for producing the photoelectric conversion device A photoelectric conversion device comprising: a semiconductor substrate; an inorganic photoelectric conversion layer provided within the semiconductor substrate; and an organic photoelectric conversion layer provided above the inorganic photoelectric conversion layer, wherein the organic photoelectric conversion layer is prepared by a shadow mask method. ... 02/22/07 - 20070040232 - Data download to imager chip using image sensor as a receptor An imaging device having a CMOS photosensor array for capturing images is described in which the array is also used to input programming and/or data used to control the imaging operations. The data-input can be based upon variations in light color, value, intensity, and patterning, or any combinations of the ... 01/11/07 - 20070007611 - Image sensor and related fabrication method An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area, wherein the pixel area comprises an active region and the transfer gate electrode is disposed on the active region. A method of ... 12/21/06 - 20060284274 - Cmos image device with local impurity region and method of manufacturing the same According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode ... 12/14/06 - 20060278944 - Organic photosensitive cells having a reciprocal-carrier exciton blocking layer A photosensitive cell includes an anode and a cathode; a donor-type organic material and an acceptor-type organic material forming a donor-acceptor junction connected between the anode and the cathode; and an exciton blocking layer connected between the acceptor-type organic material of the donor-acceptor junction and the cathode, the blocking layer ... 12/14/06 - 20060278943 - Accelerated particle and high energy radiation sensor An accelerated electron detector comprises an array of monolithic sensors in a CMOS structure, each sensor comprising a substrate (10), an epi layer (11), a p+ well (12) and n+ wells (13) which are separated from the p+ well (12) by the epi layer (11). Integrated in the p+ well ... 10/05/06 - 20060220163 - Light sources that use diamond nanowires Light sources that use diamond nanowires, and methods of forming the same, are described. For example, the light source can include a diamond nanowire that bridges the gap between a first electrode and a second electrode to electrically couple the two electrodes. A power source coupled to the first and ... 09/21/06 - 20060208330 - Method and structure to reduce optical crosstalk in a solid state imager Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the properties and performance of the imager ... 09/07/06 - 20060197169 - Method and structure to reduce optical crosstalk in a solid state imager Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the properties and performance of the imager ... 08/31/06 - 20060192261 - Active pixel sensor An active pixel sensor is proposed by the invention. The position of the gate of the reset transistor is kept away from the interface of the isolation region and the silicon so that the depletion region does not reach the isolation. Accordingly, dark currents caused by isolation region damages can ... 08/24/06 - 20060186498 - Microminiature moving device and method of making the same In a microminiature moving device that has disposed, on a single-crystal silicon substrate, movable elements (a movable rod 46, a movable comb electrode 49, etc.) displaceable in parallel to the substrate surface and stationary parts (a stationary part 40a, etc.), the stationary parts are fixedly secured to the single-crystal silicon ... 07/27/06 - 20060163682 - Semiconducting photo detector structure An epitaxial structure for semiconducting photo detectors is provided. The epitaxial structure contains a substrate having a built-in electric circuit, a first and second metallic layers on top of said substrate electrically connected to the corresponding electrical input and output points of the substrate's electric circuit, and a semiconducting photo ... 07/27/06 - 20060163681 - Gallium-nitride based ultraviolet photo detector A structure for a gallium-nitride (GaN) based ultraviolet photo detector is provided. The structure contains an n-type contact layer, a light absorption layer, a light penetration layer, and a p-type contact layer, sequentially stacked on a substrate from bottom to top in this order. The layers are all made of ... 07/20/06 - 20060157811 - Fabrication of low leakage-current backside illuminated photodiodes Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or ... 07/06/06 - 20060145276 - Optical semiconductor device and fabrication method therefor An optical semiconductor device such as, for example, a quantum dot SOA and a fabrication method therefor are disclosed wherein an active layer and a current constriction structure can be formed leftwardly and rightwardly symmetrically to minimize the polarization dependency. The fabrication method for an optical semiconductor device includes the ... 06/15/06 - 20060125035 - Pinned photodiode fabricated with shallow trench isolation A method and system is disclosed for reducing or eliminating leakage between a pinned photodiode and shallow trench isolation structure fabricated therewith while optimizing the sensitivity of the photodiode. Provided is a system with an N+ region implanted in a P-type substrate; a P-type well separating the N+ region from ... 06/08/06 - 20060118896 - Photodetector and method of manufacturing the same Disclosed herein is a photodetector suitable for use in an optical pickup reproducing apparatus, which is capable of detecting short-wavelength light (e.g., light of about 405 nm) from storage media having large capacity, such as BD, with a high efficiency at a high speed, and a method of manufacturing the ... 05/11/06 - 20060097334 - Method of manufacturing optical sensor A cubic element of photonic crystal is integrally formed on the surface of a photo-detection element, and a portion of the photonic crystal cubic element is irradiated with ultraviolet rays thereby to change the refractive index of the portion of the cubic element that has been irradiated with ultraviolet rays. ... 04/06/06 - 20060071288 - Small-gap light sensor A sensor having a light detector with a small gap between the cathode and anode to enable a high pressure cavity resulting in a long lifetime of the detector due to insignificant sputtering from the cathode and subsequent minimal burying of the noble gas in the cavity. The detector may ... 03/02/06 - 20060043509 - Packaged microelectronic imaging devices and methods of packaging microelectronic imaging devices Microelectronic imaging devices and methods of packaging microelectronic imaging devices are disclosed herein. In one embodiment, a microelectronic imaging device includes a microelectronic die having an integrated circuit, an image sensor electrically coupled to the integrated circuit, and a plurality of bond-pads electrically coupled to the integrated circuit. The imaging ... 02/23/06 - 20060038249 - Semiconductor light-receiving device and uv sensor apparatus A semiconductor light-receiving device and a UV sensor apparatus that have high photoelectric conversion efficiency even for short-wavelength radiation are provided. The semiconductor light-receiving device includes a cathode layer and anode layers formed at a surface of the cathode layer. A part of the cathode layer that is located between ... 02/02/06 - 20060022288 - Semiconductor integrate device and method for manufacturing same A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended ... 12/15/05 - 20050275048 - Microelectronic imagers and methods of packaging microelectronic imagers Microelectronic imagers and methods for packaging microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging unit can include a microelectronic die, an image sensor, an integrated circuit electrically coupled to the image sensor, and a bond-pad electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends ... 12/01/05 - 20050263840 - Photo diode and method for manufacturing same A photo diode includes a buried layer of first conductivity type, an epitaxial layer of first conductivity type and an epitaxial layer second conductivity type which are sequentially formed on a semiconductor substrate, a doped shallow junction layer of second conductivity type which is formed using a solid state diffusion ... 10/06/05 - 20050218467 - Dye-sensitized solar cell A dye-sensitized solar cell with high conversion efficiency is provided. The dye-sensitized solar cell according to the present invention has, between an electrode (2) formed on a surface of a transparent substrate (1) and a counter electrode (6), a light-absorbing layer (3) containing light-absorbing particles carrying dye and an electrolyte ... 09/22/05 - 20050205954 - Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry In accordance with the invention, an improved image sensor comprises an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed ... 08/11/05 - 20050173773 - Image sensor and method of manufacturing the same Disclosed are an image sensor and a method of manufacturing the same. A metal wiring consisting of a lower metal wiring, an upper metal wiring, and a plug connecting the lower and upper metal wirings, in which the lower and upper metal wiring are made of a transparent conductive film ... 08/11/05 - 20050173772 - Photodiode having light-absorption part separated by pn junction and method of fabricating the same In a photodiode and a method of formation thereof, a reflecting member that reflects light incident to a separating region toward light-absorption parts. A plurality of light-absorption parts are separated by the separating region, and the reflecting member formed on the separating region has at least one sloped surface capable ... 07/28/05 - 20050161753 - Method of fabricating radio frequency microelectromechanical systems (mems) devices on low-temperature co-fired ceramic (ltcc) substrates A phased-array antenna system and other types of radio frequency (RF) devices and systems using microelectromechanical switches (“MEMS”) and low-temperature co-fired ceramic (“LTCC”) technology and a method of fabricating such phased-array antenna system and other types of radio frequency (RF) devices are disclosed. Each antenna or other type of device ... 07/21/05 - 20050156262 - Image sensor and method of manufacturing the same Disclosed is a method of manufacturing an image sensor having light sensitivity over a photodiode equal in area to that of a unit pixel. The image sensor includes an image sensor comprising: a first semiconductor substrate doped with a first conductive dopant; a first diffusion layer formed in the semiconductor ... 07/21/05 - 20050156261 - Optical sensor and display Conventionally, in the case where optical sensors are included in a display device, separate modules manufactured in separate steps are included in the same casing. However, reduction in the number of parts and in costs cannot be achieved, and reduction in size and thickness of the display device has not ... 07/14/05 - 20050151216 - Integrated circuit device packaging structure and packaging method A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. A lead-mounted substrate is placed on the side of the light receiving surface of the integrated circuit device having a photo detecting part. The lead is electrically connected with the integrated circuit device via an ... 06/30/05 - 20050139943 - Solid-state image pickup device A solid-state image pickup device 10 has an arrangement in which a second conductivity type semiconductor region 14 is formed on the surface of a first conductivity type electric charge accumulation region 13 of a light-receiving sensor portion, a shallow trench isolation layer 20 formed of an insulating layer is ... 06/02/05 - 20050116309 - Semiconductor light-emitting element, manufacturing method therefor and semiconductor device A semiconductor light-emitting element has a semiconductor laminate including an active layer emitting light of a prescribed emission wavelength and a step located at an in-depth position beyond the active layer. The element also has a substrate transparent to the emission wavelength, a first electrode provided on a surface of ... ### FreshPatents.com Support - Terms & Conditions |