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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Responsive To Non-electrical Signal (e.g., Chemical, Stress, Light, Or Magnetic Field Sensors) > Electromagnetic Or Particle Radiation > Light

Light

Light patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

04/03/14 - 20140091414 - Semiconductor apparatus
A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different...

03/20/14 - 20140077320 - Scribe lines in wafers
A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe...

03/20/14 - 20140077321 - Photoelectric conversion element, method of manufacturing photoelectric conversion element, and electronic device
A method of manufacturing a photoelectric conversion element, which is provided with a substrate, a first electrode film having first and second conductive films provided on the substrate, a metal compound film covering the first electrode film, a semiconductor film connected with the metal compound film, a second electrode film...

03/13/14 - 20140070347 - Methods for producing chalcopyrite compound thin films for solar cells using multi-stage paste coating
Disclosed are methods for producing chalcopyrite compound (e.g., copper indium selenide (CIS), copper indium gallium selenide (CIGS), copper indium sulfide (CIS) or copper indium gallium sulfide (CIGS)) thin films. The methods are based on solution processes, such as printing, particularly, multi-stage coating of pastes or inks of precursors having different...

03/06/14 - 20140061830 - Conductive paste composition and semiconductor devices made therewith
A conductive paste composition contains a source of an electrically conductive metal, an alkaline-earth-metal boron tellurium oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor device substrate (e.g., by screen printing) and...

03/06/14 - 20140061831 - Conductive paste composition and semiconductor devices made therewith
A conductive paste composition contains a source of an electrically conductive metal, a Ti—Te—Li oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste...

03/06/14 - 20140061832 - Surface plasmon device
The electro-optical device includes a semiconductor layer, a first metal layer and an electrical insulator layer disposed between the semiconductor layer and the first metal layer. The electrical insulator layer includes a silicon nitride layer so as to provide an interface between the first metal layer and the silicon nitride...

02/27/14 - 20140054735 - Photoelectric conversion module
A photoelectric conversion module is disclosed. In one aspect, the photoelectric conversion module includes 1) first and second conductive substrates facing each other and 2) first and second grid electrodes formed between and respectively electrically connected to the first and second conductive substrates. The photoelectric conversion module also includes a...

02/20/14 - 20140048897 - Pixel with negatively-charged shallow trench isolation (sti) liner
Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a...

02/06/14 - 20140035077 - Photovoltaic device including semiconductor nanocrystals
A photovoltaic device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor....

01/30/14 - 20140027871 - Charge sensors using inverted lateral bipolar junction transistors
A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base...

01/23/14 - 20140021572 - Photodiode device and method for production thereof
The photodiode device has an electrically conductive cathode layer (3) at a photodiode layer (4) composed of a semiconductor material. Doped anode regions (5) are situated at a top side of the photodiode layer facing away from the cathode layer. A trench (14) subdivides the photodiode layer. A conductor layer...

01/23/14 - 20140021573 - Solid-state imaging device and manufacturing method of solid-state imaging device
A light receiving layer is formed with an array of photodiodes for accumulating signal charge produced by photoelectric conversion of incident light. A wiring layer provided with electrodes and wiring for controlling the photodiodes is formed behind the light receiving layer in a traveling direction of the incident light. In...

01/09/14 - 20140008745 - Solid-state imaging device and electronic apparatus
There is provided a solid-state imaging device including a pixel substrate in which a wire layer and a semiconductor element are formed using a wire material which can endure temperature at a time of forming a photoelectric conversion layer, and a logic substrate in which a semiconductor element is formed....

01/09/14 - 20140008746 - Mesoscopic optoelectronic devices comprising arrays of semiconductor pillars deposited from a suspension and production method thereof
The invention illustrates an innovative way to fabricate low cost, efficient, rigid or flexible mesoscopic optoelectronic devices such as photovoltaic (PV) solar cells or photo sensors (b) comprising three-dimensional arrays of semi-conductive micro- or nano-pillars (3b) deposited from suspensions e.g. by inkjet printing. Said pillars additionally increase the surface area...

01/09/14 - 20140008747 - Method of producing organic photoelectric conversion device
An organic photoelectric conversion device can be easily produced by a method of producing an organic photoelectric conversion device, comprising forming an anode, forming an active layer on the anode, then, forming a cathode on the active layer by a coating method....

01/09/14 - 20140008748 - Method for manufacturing solid-state image pickup device
A method for manufacturing a solid-state image pickup device that includes a pixel portion and a peripheral circuit portion, includes: forming a first insulating film in the pixel portion and the peripheral circuit portion, forming a second insulating film above the first insulating film, etching the second insulating film in...

12/19/13 - 20130334635 - Pixel structure with reduced vacuum requirements
A pixel structure, which may be used for infrared bolometers or other microelectromechanical systems (MEMS) devices, configured to increase immunity of the pixel to molecular heat transfer and reduce the vacuum requirements for a wafer level packaged device incorporating the pixel or an array thereof. In one example, the pixel...

12/12/13 - 20130328144 - Semiconductor device, manufacturing method therefor, and electronic apparatus
A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip...

12/05/13 - 20130320469 - Image sensor with low step height between back-side metal and pixel array
A CMOS image sensor and a method of forming are provided. The CMOS image sensor may include a device wafer. A conductive feature may be formed on a back-side surface of the device wafer. The device wafer may include a pixel formed therein. A passivation layer may be formed over...

12/05/13 - 20130320470 - Photodetector
A photodetector 1A comprises a multilayer structure 3 having a first layer 4 constituted by first metal or first semiconductor, a semiconductor structure layer 5 mounted on the first layer 4 and adapted to excite an electron by plasmon resonance, and a second layer 6 mounted on the semiconductor structure...

10/17/13 - 20130270662 - Image sensor of curved surface
A method for manufacturing an image sensor, including the steps of: forming elementary structures of an image sensor on the first surface of a semiconductor substrate; installing a handle on the first surface; defining trenches in the handle, the trenches forming a pattern in the handle; and installing, on a...

10/10/13 - 20130264668 - Image sensor cross-talk reduction system and method
A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten...

10/10/13 - 20130264669 - Method of making a semiconductor radiation detector
A method of making a semiconductor radiation detector wherein the metal layers which serve as the cathode and anode electrodes are recessed from the designated prospective dice lines which define the total upper and lower surface areas for each detector such that the dicing blade will not directly engage the...

10/10/13 - 20130264670 - Solid-state imaging device and manufacturing method of solid-state imaging device
A solid-state imaging device according to embodiments of the present disclosure includes a light receiving unit, a first charge holding film, and a second charge holding film. The light receiving unit converts the incident light to an electric current. The first charge holding film is formed above the light receiving...

10/03/13 - 20130256820 - Thin film aluminum-containing photovoltaics
This invention relates to thin film photovoltaic materials containing aluminum, as well as methods for making materials using polymeric precursor compounds. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, devices and systems for energy conversion, and solar cells. This invention...

09/19/13 - 20130241017 - Solid-state image pickup device
A solid-state image pickup device 1 is back surface incident type and includes a semiconductor substrate 10, a semiconductor layer 20 and a light receiving unit 30. The solid-state image pickup device 1 photoelectrically converts light incident on the back surface S2 of the semiconductor substrate 10 into signal electrical...

09/12/13 - 20130234270 - Atomic layer deposition strengthening members and method of manufacture
In one embodiment, a method of forming a semiconductor device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a first trench in the sacrificial layer, forming a first sidewall layer with a thickness of less than about 50 nm on a first sidewall of the...

09/12/13 - 20130234271 - Conductive compositions and processes for use in the manufacture of semiconductor devices
The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) zinc-containing additive; (c) glass frit wherein said glass frit is lead-free; dispersed in (d) organic medium. The present invention is further directed to an electrode formed from the composition above wherein said...

08/29/13 - 20130221463 - Solid-state imaging element
According to one embodiment, a solid-state imaging element, includes a plurality of impurity regions provided with a prescribed interval, each of the impurity regions acting as a channel for transferring charges, wherein the impurity region has a trapezoid shape in which bases is perpendicularly directed to a charge transfer direction,...

08/15/13 - 20130207210 - Low-capacitance photodiode utilizing vertical carrier confinement
A semiconductor device contains a photodiode which includes a buried collection region formed by a bandgap well to vertically confine photo-generated minority carriers. the bandgap well has the same conductivity as the semiconductor material immediately above and below the bandgap well. A net average doping density in the bandgap well...

08/15/13 - 20130207211 - Wavelength sensitive photodiode employing shorted junction
A semiconductor device contains a photodiode which has a plurality of p-n junctions disposed in a stack. Two contact structures on the semiconductor device are connected across at least one of the junctions to allow electrical connection to an external detection circuit, so that signal current from incident light on...

08/08/13 - 20130200477 - Semiconductor photomultiplier device
According to embodiments of the present invention, a semiconductor photomultiplier device is provided. The semiconductor photomultiplier device includes a substrate having a front side and a back side, a common electrode of a first conductivity type adjacent to the back side, and a cell including an active region of a...

07/18/13 - 20130181307 - Method of manufacturing semiconductor device and semiconductor device
According to an embodiment, a method of manufacturing a semiconductor device is provided. The method of manufacturing a semiconductor device includes forming a blocking film by a material including at least carbon on an upper surface of a second element among a first element and the second element formed on...

07/18/13 - 20130181308 - Methods of fabricating dilute nitride semiconductor materials for use in photoactive devices and related structures
Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the...

07/18/13 - 20130181309 - Image pickup apparatus and image pickup system
An image pickup apparatus includes photoelectric conversion units each including a first semiconductor region of a first conductivity type and a semiconductor region of a second conductivity type disposed in contact with the first semiconductor region, a potential barrier formed between photoelectric conversion units, and a contact plug disposed in...

07/04/13 - 20130168789 - Localized surface plasmon resonance sensor using chalcogenide materials and method for manufacturing the same
A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb)....

07/04/13 - 20130168790 - Organic photoelectric conversion element and image element
An organic photoelectric conversion element comprises: a pair of electrodes; an organic photoelectric conversion layer arranged between the pair of electrodes; and an positive hole blocking layer arranged between one of the pair of electrodes and the organic photoelectric conversion layer, wherein an ionization potential of the positive hole blocking...

06/20/13 - 20130154040 - Photo detectors
Photo detectors are provided. The photo detector includes a photoelectric conversion layer between a lower carrier transportation layer and an upper carrier transportation layer, and a common electrode on the upper carrier transportation layer opposite to the photoelectric conversion layer. The photoelectric conversion layer includes a plurality of light absorption...

06/13/13 - 20130146998 - Single-band and dual-band infrared detectors
Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a...

06/06/13 - 20130140662 - Photodiode device for improving the detectivity and the forming method thereof
A method for forming the photodiode device is provided. The method comprises providing a substrate, then a transparent conductive film is formed on the substrate. A conductive polymer is formed on the transparent conductive film. A photoactive layer is formed on the conductive polymer. A charge blocking layer is formed...

05/16/13 - 20130119499 - Nanoengineered biophotonic hybrid device
Apparatus, compositions, methods, and articles of manufacture are disclosed relating to the design and production of biological components and/or their incorporation in devices and systems, including biohybrid photosensitive devices and systems. In some embodiments, biological components include light antenna structures that collect light and emit Stokes-shifted light to a photoactive...

05/09/13 - 20130113059 - Photovoltaic device and method of manufacturing the same
A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing...

05/09/13 - 20130113060 - Solid-state imaging device
A solid-state imaging device including unit pixel cells, each having a photoelectric conversion film and a pixel electrode which are formed above a silicon substrate, an amplification transistor which is formed on the silicon substrate and outputs a voltage according to a potential of the pixel electrode, and a reset...

05/02/13 - 20130105924 - Solid-state imaging apparatus and manufacturing method of solid-state imaging apparatus
The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated...

04/04/13 - 20130082341 - Semiconductor device and semiconductor-device manufacturing method
It is possible to reduce resistance variations of a member connecting a through-silicon via to a line and improve wiring reliability. A hole through which the through-silicon via is to be stretched is created and an over-etching process is carried out on a wiring layer including the line. Then, by...

03/21/13 - 20130069187 - Photoelectric conversion device
It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound...

03/14/13 - 20130062717 - Circuit board
A circuit board includes a board having a hole formed therein, and an imager that is bonded to a first region including at least a portion of the hole in a front surface of the board....

02/28/13 - 20130049148 - Conductive paste composition and semiconductor devices made therewith
A conductive paste composition contains a source of an electrically conductive metal, a lead-tellurium-based oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the lead-free paste composition on a semiconductor substrate (e.g., by screen printing) and firing the...

02/28/13 - 20130049149 - Method of forming pattern, actinic-ray- or radiation-sensitive resin composition and actinic-ray- or radiation-sensitive film
Provided is a method of forming a pattern, including forming an actinic-ray- or radiation-sensitive resin composition into a film, the actinic-ray- or radiation-sensitive resin composition including a resin (A) including a repeating unit containing a group that when acted on by an acid, is decomposed to thereby produce a polar...

02/28/13 - 20130049150 - Formation of metal nanospheres and microspheres
Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at...