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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Responsive To Non-electrical Signal (e.g., Chemical, Stress, Light, Or Magnetic Field Sensors) > Electromagnetic Or Particle Radiation Electromagnetic Or Particle RadiationElectromagnetic Or Particle Radiation patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/10/08 - 20080006891 - Direct energy conversion devices with a substantially continuous depletion region and methods thereof An energy conversion device includes a plurality of pores formed within a substrate and a junction region disposed within each of the plurality of pores where each of the junction regions has a depletion region. Each of the plurality of pores defines an opening size in the substrate and a ... 11/15/07 - 20070262403 - Semiconductor device and method for manufacturing the same An object of the prevent invention is to provide a semiconductor device having a conductive film, which sufficiently serves as an antenna, and a method for manufacturing thereof. The semiconductor device has an element formation layer including a transistor, which is provided over a substrate, an insulating film provided on ... 11/08/07 - 20070257328 - Detecting plasmons using a metallurgical junction A sensor device includes a substrate having first and second regions of first and second conductivity types, respectively. A junction having a band-gap is formed between the first and second regions. A plasmon source generates plasmons having fields. At least a portion of the plasmon source is formed near the ... 10/11/07 - 20070235827 - Method and apparatus providing isolation well for increasing shutter efficiency in global storage pixels A pixel having a well-isolated charge storage region or floating diffusion region may be obtained by providing a separate P-well around the storage region or floating diffusion region. In one embodiment, a separate P-well entirely encases the storage region and is in contact with the storage region. This P-well provides ... 08/16/07 - 20070187787 - Pixel sensor structure including light pipe and method for fabrication thereof A pixel for an image sensor includes a photosensor located within a substrate. A patterned dielectric layer having an aperture registered with the photosensor is located over the substrate. A lens structure is located over the dielectric layer and also registered with the photosensor. A liner layer is located contiguously ... 07/05/07 - 20070152288 - Dual-sided microstructured, position-sensitive detector Abstract of the Disclosure The invention relates to a detector for determining the position and/or energy of photons and/or charged particles. Said detector comprises a plurality of diodes made of a semi-conductor material, n-contacts (1) and p-contacts (4), the n-contacts being provided by dividing an n-layer into individual segments. Said ... 07/05/07 - 20070152287 - Photonic diode An element for interacting with electromagnetic radiation is disclosed, including a first self-resonant body, a second self-resonant body, and a directional device interposed between the first self-resonant body and the second self-resonant body. The directional device is adapted to inhibit propagation of electromagnetic radiation from the second self-resonant body to ... 06/28/07 - 20070145502 - Spin polarization amplfying transistor An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current ... 06/14/07 - 20070132050 - Photoelectric surface and photodetector Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in ... 04/19/07 - 20070085157 - Integrated proximity sensor and light sensor Apparatuses and methods to sense proximity and to detect light. In one embodiment, an apparatus includes an emitter of electromagnetic radiation and a detector of electromagnetic radiation; the detector is configured to detect electromagnetic radiation from the emitter when the apparatus is configured to sense proximity, and the emitter is ... 02/15/07 - 20070034977 - Reflector and projection type display apparatus It is an object to prevent deterioration of reflectance of a reflection layer composed of silver or a silver alloy, resulting from heat-caused migration of silver. The reflector for projection type display apparatuses which display image light beams emitted and reflected by a light source, modulated for light intensity by ... 01/25/07 - 20070018263 - Semiconductor device and manufacturing method of the same The invention is directed to enhancement of performance of a back surface incident type semiconductor device having a light receiving element and a manufacturing method thereof without increasing a manufacturing cost. A supporting body is attached to a front surface of a semiconductor substrate formed with a light receiving element ... 12/21/06 - 20060284273 - Cmos image sensor and method for fabrication thereof There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with ... 11/30/06 - 20060267121 - Microlenses for imaging devices A microlens includes a first light conductor having at least one concave recess, and a second light conductor in the recess. The curvature of the recess and the refractive indices of the light conductors cause incident light from the area of the microlens to be transmitted to a photosensor with ... 08/24/06 - 20060186497 - Photoelectric conversion device and manufacturing method of the same, and a semiconductor device It is an object of the present invention to provide a photo-sensor having a structure which can suppress electrostatic discharge damage. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a ... 06/22/06 - 20060131681 - Semiconductor devices and methods of forming interconnection lines therein An example disclosed semiconductor device includes a semiconductor substrate, a lower interlayer insulating layer formed on the substrate, a lower wire formed on the lower interlayer insulating layer, and an upper interlayer insulating layer which is formed on the lower interlayer insulating layer and has a via hole to expose ... 04/27/06 - 20060086996 - Solid state imaging device A solid state imaging device, includes: a sensor cell array having a plurality of sensor cells arranged in a matrix on a substrate, each sensor cell including: a photoelectric transducer provided in the substrate and generating photo-generated electric charges according to an incident light; a transfer gate formed on the ... 03/16/06 - 20060054985 - Artificial ferromagnetism in semiconducting arrays Nanostructures are provided having electronic properties suitable for artificial ferromagnetism or anti-ferromagnetism in semiconducting arrays. An artificial ferromagnet device comprises an insulator substrate, and a semiconductor material over the insulator substrate. The semiconductor material has a bipartite architecture comprising interconnected, nonmagnetic nanodots organized into a plurality of cells in a ... 02/23/06 - 20060038248 - Method for manufacturing cmos image sensor using spacer etching barrier film A method for fabricating a CMOS image sensor including a low voltage buried photodiode and a transfer transistor, includes the steps of: forming a field oxide for defining active area and field area on certain area of an epitaxial layer formed on a substrate, and forming a gate of transfer ... 11/03/05 - 20050242409 - Imagine sensor with a protection layer An image sensor die comprises a substrate and an image sensor array formed over the substrate. Micro lens are disposed on the image sensor array. A protection layer is formed on the micro lens to prevent the micro lens from particle containment. ... 11/03/05 - 20050242408 - Structure of image sensor module and a method for manufacturing of wafer level package The present invention discloses an image sensor module and forming method of wafer level package. The image sensor module comprises an isolating base, a wafer level package, a lens holder, and a F.P.C.. The wafer level package having a plurality of image sensor dies and a plurality of solder balls ... 10/27/05 - 20050236683 - Prevention of tampering in electronic devices Circuitry for protection of an integrated circuit (20) which includes operational-circuits (24) formed on a chip (21). The circuitry includes a plurality of detectors (26), integrally formed on the chip as part of the integrated circuit and dispersed among the operational-circuits on the chip. The detectors are adapted, in response ... 10/13/05 - 20050224901 - Active pixel having buried transistor An active pixel for an image sensor that has minimized 1/f noise. The active pixel includes an amplification transistor that is implemented as a “body current” transistor. This minimizes the effect of surface oxide traps that are believed to cause 1/f noise. Further, the reset transistor, the row select transistor, ... 09/22/05 - 20050205953 - Semiconductor device A semiconductor device includes a silicon substrate having a film thickness smaller than a maximum range of a particle generated by a nuclear reaction between a fast neutron and a silicon atom, and a semiconductor element formed on a surface of the silicon substrate. ... 08/04/05 - 20050167771 - Photodetector device, solid-state imaging device, and camera system A photodetector device is provided which comprises a photodiode for generating an electrical signal corresponding to an amount of incident light, and a logarithmic conversion transistor for subjecting a voltage value of the electrical signal to logarithmic conversion. The logarithmic conversion transistor comprises a first electrode which is one of ... 07/07/05 - 20050145963 - Manufacturing method of solid-state image pickup device, and solid-state image pickup device A p-type region of a light receiving section is formed by implanting boron ions from the direction normal to a semiconductor substrate. The ion implantation conditions of boron are a few hundred to 4 MeV for the ion implantation energy, 1×1010 to 1×1012 ions/cm2 for the implanted dose, and 0 ... 06/16/05 - 20050127462 - Image sensor applied with device isolation technique for reducing dark signals and fabrication method thereof The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each ... ### FreshPatents.com Support |