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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Responsive To Non-electrical Signal (e.g., Chemical, Stress, Light, Or Magnetic Field Sensors) > Magnetic Field

Magnetic Field

Magnetic Field patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

08/21/14 - 20140231940 - Stt-mram design enhanced by switching current induced magnetic field
A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through...

08/21/14 - 20140231941 - Magnetoresistive structures, memory devices including the same, and methods of manufacturing the magnetoresistive structures and the memory devices
Magnetoresistive structures, memory devices including the same, and methods of manufacturing the magnetoresistive structures and the memory devices, include a plurality of free layers each having a magnetization direction that is changeable, a separation layer covering at least two of the plurality of free layers, and at least one pinned...

08/21/14 - 20140231942 - Semiconductor device and method for fabricating the same
A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer...

08/21/14 - 20140231943 - Memory element and memory device
There is disclosed a memory element including a memory layer that maintains information through the magnetization state of a magnetic material, a magnetization-fixed layer with a magnetization that is a reference of information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and...

08/14/14 - 20140225207 - Magnetic storage element and magnetic memory
Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate...

08/07/14 - 20140217524 - Electrostatically controlled magnetic logic device
A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion....

08/07/14 - 20140217525 - Method of improving sensitivity of terrestrial magnetism sensor and apparatus using the same
Disclosed herein are a method of improving sensitivity of a terrestrial magnetism sensor and an apparatus using the same. A method of forming a terrestrial magnetism sensor includes: cleaning a surface of the terrestrial magnetism sensor; and depositing a thermoelectric material as a thin film on the cleaned surface of...

08/07/14 - 20140217526 - Novel perpendicular magnetoresistive elements
A perpendicular magnetoresistive element comprises anovel buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the tunnel barrier layer is provided, wherein at least the portion of the buffer layer interfacing to the recording layer contains a rocksalt...

08/07/14 - 20140217527 - Method of manufacturing mram memory elements
A STT-MRAM comprises a method to form magnetic random access memory (MRAM) element array having ultra small dimensions using double photo exposures and etch of their hard masks. The memory cells are located at the cross section of two ultra-narrow photo-resist lines suspended between two large photo-resist bases. Array of...

08/07/14 - 20140217528 - Spin-torque magnetoresistive memory element and method of fabricating same
A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the...

08/07/14 - 20140217529 - Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications
A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo,...

08/07/14 - 20140217530 - Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications
A MTJ for a spintronic device that is a domain wall motion device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V,...

08/07/14 - 20140217531 - Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications
A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo,...

08/07/14 - 20140217532 - Magnetic tunnel junction device and fabrication
A method of forming a magnetic tunnel junction (MTJ) device includes forming a first MTJ cap layer on a MTJ structure. The first MTJ cap layer includes a first non-nitrified metal. The method also includes forming a second MTJ cap layer over the first MTJ cap layer. The second MTJ...

07/31/14 - 20140210021 - Method and apparatus for ameliorating peripheral edge damage in magnetoresistive tunnel junction (mtj) device ferromagnetic layers
An in-process magnetic layer having an in-process area dimension is formed with a chemically damaged region at a periphery. At least a portion of the chemically damaged region is transformed to a chemically modified peripheral portion that is non-ferromagnetic. Optionally, the transforming is by oxidation, nitridation or fluorination, or combinations...

07/31/14 - 20140210022 - Magnetic seed for improving blocking temperature and shield to shield spacing in a tmr sensor
The blocking temperature of the AFM layer in a TMR sensor has been raised by inserting a magnetic seed layer between the AFM layer and the bottom shield. This gives the device improved thermal stability, including improved SNR and BER....

07/31/14 - 20140210023 - Vertical hall effect element with improved sensitivity
A vertical Hall Effect element includes a low voltage P-well region disposed at a position between pickups of a vertical Hall Effect element to result in an improved sensitivity of the vertical Hall Effect element. A method results in the vertical Hall Effect element having the improved sensitivity....

07/31/14 - 20140210024 - Tunneling magnetoresistance (tmr) read sensor with an integrated auxilliary ferromagnetic shield
The invention provides a tunneling magnetoresistance (TMR) read sensor with an integrated auxiliary shield comprising buffer, parallel-coupling, shielding and decoupling layers for high-resolution magnetic recording. The buffer layer, preferably formed of an amorphous ferromagnetic Co—X (where X is Hf, Y, Zr, etc.) film, creates microstructural discontinuity between a lower ferromagnetic...

07/31/14 - 20140210025 - Spin transfer mram element having a voltage bias control
A STT-MRAM comprises apparatus, a method of operating a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a bias voltage controlled perpendicular anisotropy of a recording layer through an interlayer interaction to achieve a lower spin-transfer switching current. The anisotropy modification layer is under an electric field...

07/24/14 - 20140203381 - Process and apparatus for transforming nitridation/oxidation at edges, and protecting edges of magnetoresistive tunnel junction (mtj) layers
Material surrounding a magnetic tunnel junction (MTJ) device region of a multi-layer starting structure is etched, forming an MTJ device pillar having an MTJ layer with a chemically damaged peripheral edge region. De-nitridation or de-oxidation, or both, restore the chemically damaged peripheral region to form an edge-restored MTJ layer. An...

07/24/14 - 20140203382 - Boron carbide films exhibits extraordinary magnetoconductance and devices based thereon
Boron carbide polymers prepared from orthocarborane icosahedra cross-linked with a moiety A wherein A is selected from the group consisting of benzene, pyridine. 1, 4-diaminobenzene and mixtures thereof give positive magnetoresistance effects of 30%-80% at room temperature. The novel polymers may be doped with transitional metals to improve electronic and...

07/24/14 - 20140203383 - Perpendicular magnetoresistive memory element
A perpendicular magnetoresistive memory element comprises a three-terminal structure having a thick multilayered recording layer connected to a middle electrode and a functional layer having rocksalt crystal structure interfacing to the recording layer. The interface crystal grain structures between the functional layer and the recording layer provides an electric field...

07/17/14 - 20140197504 - Mg discontinuous insertion layer for improving mtj shunt
A MTJ is disclosed with a discontinuous Mg or Mg alloy layer having a thickness from 1 to 3 Angstroms between a free layer and a capping layer in a bottom spin valve configuration. It is believed the discontinuous Mg layer serves to block conductive material in the capping layer...

07/10/14 - 20140191345 - Magnetic memory device and method of manufacturing the same
A magnetic memory with a memory layer having magnetization, the direction of magnetization of which changes according to information recorded therein; a reference layer having a fixed magnetization against which magnetization of the memory layer can be compared; a nonmagnetization layer between the memory layer and the reference layer; and...

07/10/14 - 20140191346 - Magnetic memory devices including magnetic layers separated by tunnel barriers
A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier...

07/03/14 - 20140183673 - Magnetic read head with mr enhancements
A TMR stack or a GMR stack, ultimately formed into a sensor or MRAM element, include insertion layers of Fe or iron rich layers of FeX in its ferromagnetic free layer and/or the AP1 layer of its SyAP pinned layer. X is a non-magnetic, metallic element (or elements) chosen from...

07/03/14 - 20140183674 - Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern
Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore,...

06/26/14 - 20140175574 - Method and system for providing magnetic junctions having improved polarization enhancement and reference layers
A magnetic junction is provided. The magnetic junction includes a reference stack, a nonmagnetic spacer layer and a free layer. The reference stack includes a high perpendicular magnetic anisotropy (PMA) layer and a graded polarization enhancement layer (PEL) between the high PMA and nonmagnetic spacer layers. The PEL is magnetically...

06/26/14 - 20140175575 - Perpendicular spin transfer torque memory (sttm) device with enhanced stability and method to form same
Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free...

06/26/14 - 20140175576 - Shape enhanced pin read head magnetic transducer with stripe height defined first and method of making same
The present invention generally relates to a magnetic sensor in a read head having a hard or soft bias layer that is uniform in thickness within the sensor stack. The method of making such sensor is also disclosed. The free layer stripe height is first defined, followed by defining the...

06/26/14 - 20140175577 - Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions
A method and system provide a magnetic junction usable in a magnetic device and which resides on a substrate. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer,...

06/26/14 - 20140175578 - Diffusionless transformations in mtj stacks
A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a plurality of magnetic layers including a nonmagnetic spacer layer. The magnetic junction also includes at least one diffusionless transformation layer. The magnetic junction is configured to be switchable between a plurality of...

06/26/14 - 20140175579 - Method of producing nanopatterned articles, and articles produced thereby
A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film The method creates a well-ordered array of voids in the block copolymer film that is maintained over a large...

06/26/14 - 20140175580 - Magnetoresistive memory device and fabrictaion method
A magnetoresistive memory device and a fabrication method are provided. A first dielectric layer disposed on a semiconductor substrate can include a groove formed therein. A cobalt metal layer can be formed over a bottom surface and a sidewall surface of the groove. A first metal layer can be formed...

06/26/14 - 20140175581 - Magnetoresistive element having a novel cap multilayer
A magnetoresistive element comprises a novel Boron-absorbing cap multilayer provided on the top surface of an amorphous CoFeB (or CoB, FeB) ferromagnetic recording layer. As the magnetoresistive film is thermally annealed, a crystallization process occurs to form bcc CoFe grains having epitaxial growth with (100) plane parallel to the surface...

06/19/14 - 20140167191 - Method for reducing size and center positioning of magnetic memory element contacts
A method of centering a contact on a layer of a magnetic memory device. In one embodiment, a spacers is formed in an opening surrounding the upper layer and the contact is formed within the spacer. The spacer is formed from an anisotropically etched conformal layer deposited on an upper...

06/19/14 - 20140167192 - Semiconductor devices having insulating substrates and methods of formation thereof
In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate....

06/12/14 - 20140159175 - Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect
The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of...

06/12/14 - 20140159176 - Magnetoresistive element and method of manufacturing the same
According to one embodiment, a magnetoresistive element manufacturing method is provided. In this magnetoresistive element manufacturing method, a first ferromagnetic layer, tunnel barrier layer, and second ferromagnetic layer are sequentially formed on a substrate. A conductive hard mask is formed on the second ferromagnetic layer. The hard mask is patterned....

06/05/14 - 20140151824 - Self-aligned wire for spintronic device
A method for fabricating a spintronic cell includes forming a cavity in a substrate, forming a wire in the cavity, depositing a spacer layer over exposed portions of the substrate and the conductive field line, depositing a layer of conductive material on a portion of the spacer layer, removing portions...

06/05/14 - 20140151825 - Giant magneto-resistive sensor and manufacturing method thereof
Disclosed herein are a giant magneto-resistive sensor including a free layer stacked on a substrate and having a rotatable magnetic moment; a ferromagnetic fixed layer having a magnetic moment; a pin layer disposed neighboring the fixed layer; and a spacer layer disposed between the free layer and the fixed layer...

06/05/14 - 20140151826 - Graphene magnetic tunnel junction spin filters and methods of making
A Tunnel Magnetic Junction of high magnetoresistance is prepared at temperatures and pressure consistent with Si CMOS fabrication and operation. A first metal layer of cobalt or nickel is grown on an interconnect or conductive array line of e.g., copper. The metal layer is formed by electron beam irradiation. Annealing...

06/05/14 - 20140151827 - Magnetic random access memory having perpendicular enhancement layer
The present invention is directed to an STT-MRAM device including a plurality of magnetic tunnel junction (MTJ) memory elements. Each of the memory elements comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; and a magnetic fixed layer separated...

06/05/14 - 20140151828 - Spin-torque magnetoresistive structures
Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a first ferromagnetic layer, a first nonmagnetic spacer layer proximate to the first ferromagnetic layer, a second ferromagnetic layer proximate to the first nonmagnetic spacer layer, and a first antiferromagnetic layer proximate...

06/05/14 - 20140151829 - Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
A magnetic element and a magnetic memory utilizing the magnetic element are described. A contact is electrically coupled to the magnetic element. The magnetic element includes pinned, nonmagnetic spacer, and free layers and a perpendicular capping layer adjoining the free layer and the contact. The free layer has an out-of-plane...

05/29/14 - 20140145277 - Magnetic device
A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein...

05/29/14 - 20140145278 - Electrostatic control of magnetic devices
A magnetic device includes a first electrode portion, a free layer portion arranged on the first electrode portion, the free layer portion including a magnetic insulating material, a reference layer portion contacting the free layer portion, the reference layer portion including a magnetic metallic layer, and a second electrode portion...

05/22/14 - 20140138782 - Magnetic sensing apparatus and manufacturing method thereof
A magnetic sensing apparatus and a manufacturing method thereof are provided. The magnetic sensing apparatus includes a substrate including a first surface having at least one first inclined plane, a first dielectric layer having at least one second inclined plane and at least one magnetic sensing device. The first dielectric...

05/22/14 - 20140138783 - Mr device with synthetic free layer structure
A magneto-resistive device having a large output signal as well as a high signal-to-noise ratio is described along with a process for forming it. This improved performance was accomplished by expanding the free layer into a multilayer laminate comprising at least three ferromagnetic layers separated from one another by antiparallel...

05/15/14 - 20140131822 - Nonvolatile magnetic memory device
A nonvolatile magnetic memory device having a magnetoresistance-effect element includes: (A) a laminated structure having a recording layer in which an axis of easy magnetization is oriented in a perpendicular direction; (B) a first wiring line electrically connected to a lower part of the laminated structure; and (C) a second...

05/15/14 - 20140131823 - Magnetoresistive element and magnetic memory using the same
According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a...