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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Responsive To Non-electrical Signal (e.g., Chemical, Stress, Light, Or Magnetic Field Sensors) > Magnetic Field

Magnetic Field

Magnetic Field patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

07/24/14 - 20140203381 - Process and apparatus for transforming nitridation/oxidation at edges, and protecting edges of magnetoresistive tunnel junction (mtj) layers
Material surrounding a magnetic tunnel junction (MTJ) device region of a multi-layer starting structure is etched, forming an MTJ device pillar having an MTJ layer with a chemically damaged peripheral edge region. De-nitridation or de-oxidation, or both, restore the chemically damaged peripheral region to form an edge-restored MTJ layer. An...

07/24/14 - 20140203382 - Boron carbide films exhibits extraordinary magnetoconductance and devices based thereon
Boron carbide polymers prepared from orthocarborane icosahedra cross-linked with a moiety A wherein A is selected from the group consisting of benzene, pyridine. 1, 4-diaminobenzene and mixtures thereof give positive magnetoresistance effects of 30%-80% at room temperature. The novel polymers may be doped with transitional metals to improve electronic and...

07/24/14 - 20140203383 - Perpendicular magnetoresistive memory element
A perpendicular magnetoresistive memory element comprises a three-terminal structure having a thick multilayered recording layer connected to a middle electrode and a functional layer having rocksalt crystal structure interfacing to the recording layer. The interface crystal grain structures between the functional layer and the recording layer provides an electric field...

07/17/14 - 20140197504 - Mg discontinuous insertion layer for improving mtj shunt
A MTJ is disclosed with a discontinuous Mg or Mg alloy layer having a thickness from 1 to 3 Angstroms between a free layer and a capping layer in a bottom spin valve configuration. It is believed the discontinuous Mg layer serves to block conductive material in the capping layer...

07/10/14 - 20140191345 - Magnetic memory device and method of manufacturing the same
A magnetic memory with a memory layer having magnetization, the direction of magnetization of which changes according to information recorded therein; a reference layer having a fixed magnetization against which magnetization of the memory layer can be compared; a nonmagnetization layer between the memory layer and the reference layer; and...

07/10/14 - 20140191346 - Magnetic memory devices including magnetic layers separated by tunnel barriers
A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier...

07/03/14 - 20140183673 - Magnetic read head with mr enhancements
A TMR stack or a GMR stack, ultimately formed into a sensor or MRAM element, include insertion layers of Fe or iron rich layers of FeX in its ferromagnetic free layer and/or the AP1 layer of its SyAP pinned layer. X is a non-magnetic, metallic element (or elements) chosen from...

07/03/14 - 20140183674 - Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern
Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore,...

06/26/14 - 20140175574 - Method and system for providing magnetic junctions having improved polarization enhancement and reference layers
A magnetic junction is provided. The magnetic junction includes a reference stack, a nonmagnetic spacer layer and a free layer. The reference stack includes a high perpendicular magnetic anisotropy (PMA) layer and a graded polarization enhancement layer (PEL) between the high PMA and nonmagnetic spacer layers. The PEL is magnetically...

06/26/14 - 20140175575 - Perpendicular spin transfer torque memory (sttm) device with enhanced stability and method to form same
Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free...

06/26/14 - 20140175576 - Shape enhanced pin read head magnetic transducer with stripe height defined first and method of making same
The present invention generally relates to a magnetic sensor in a read head having a hard or soft bias layer that is uniform in thickness within the sensor stack. The method of making such sensor is also disclosed. The free layer stripe height is first defined, followed by defining the...

06/26/14 - 20140175577 - Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions
A method and system provide a magnetic junction usable in a magnetic device and which resides on a substrate. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer,...

06/26/14 - 20140175578 - Diffusionless transformations in mtj stacks
A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a plurality of magnetic layers including a nonmagnetic spacer layer. The magnetic junction also includes at least one diffusionless transformation layer. The magnetic junction is configured to be switchable between a plurality of...

06/26/14 - 20140175579 - Method of producing nanopatterned articles, and articles produced thereby
A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film The method creates a well-ordered array of voids in the block copolymer film that is maintained over a large...

06/26/14 - 20140175580 - Magnetoresistive memory device and fabrictaion method
A magnetoresistive memory device and a fabrication method are provided. A first dielectric layer disposed on a semiconductor substrate can include a groove formed therein. A cobalt metal layer can be formed over a bottom surface and a sidewall surface of the groove. A first metal layer can be formed...

06/26/14 - 20140175581 - Magnetoresistive element having a novel cap multilayer
A magnetoresistive element comprises a novel Boron-absorbing cap multilayer provided on the top surface of an amorphous CoFeB (or CoB, FeB) ferromagnetic recording layer. As the magnetoresistive film is thermally annealed, a crystallization process occurs to form bcc CoFe grains having epitaxial growth with (100) plane parallel to the surface...

06/19/14 - 20140167191 - Method for reducing size and center positioning of magnetic memory element contacts
A method of centering a contact on a layer of a magnetic memory device. In one embodiment, a spacers is formed in an opening surrounding the upper layer and the contact is formed within the spacer. The spacer is formed from an anisotropically etched conformal layer deposited on an upper...

06/19/14 - 20140167192 - Semiconductor devices having insulating substrates and methods of formation thereof
In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate....

06/12/14 - 20140159175 - Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect
The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of...

06/12/14 - 20140159176 - Magnetoresistive element and method of manufacturing the same
According to one embodiment, a magnetoresistive element manufacturing method is provided. In this magnetoresistive element manufacturing method, a first ferromagnetic layer, tunnel barrier layer, and second ferromagnetic layer are sequentially formed on a substrate. A conductive hard mask is formed on the second ferromagnetic layer. The hard mask is patterned....

06/05/14 - 20140151824 - Self-aligned wire for spintronic device
A method for fabricating a spintronic cell includes forming a cavity in a substrate, forming a wire in the cavity, depositing a spacer layer over exposed portions of the substrate and the conductive field line, depositing a layer of conductive material on a portion of the spacer layer, removing portions...

06/05/14 - 20140151825 - Giant magneto-resistive sensor and manufacturing method thereof
Disclosed herein are a giant magneto-resistive sensor including a free layer stacked on a substrate and having a rotatable magnetic moment; a ferromagnetic fixed layer having a magnetic moment; a pin layer disposed neighboring the fixed layer; and a spacer layer disposed between the free layer and the fixed layer...

06/05/14 - 20140151826 - Graphene magnetic tunnel junction spin filters and methods of making
A Tunnel Magnetic Junction of high magnetoresistance is prepared at temperatures and pressure consistent with Si CMOS fabrication and operation. A first metal layer of cobalt or nickel is grown on an interconnect or conductive array line of e.g., copper. The metal layer is formed by electron beam irradiation. Annealing...

06/05/14 - 20140151827 - Magnetic random access memory having perpendicular enhancement layer
The present invention is directed to an STT-MRAM device including a plurality of magnetic tunnel junction (MTJ) memory elements. Each of the memory elements comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; and a magnetic fixed layer separated...

06/05/14 - 20140151828 - Spin-torque magnetoresistive structures
Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a first ferromagnetic layer, a first nonmagnetic spacer layer proximate to the first ferromagnetic layer, a second ferromagnetic layer proximate to the first nonmagnetic spacer layer, and a first antiferromagnetic layer proximate...

06/05/14 - 20140151829 - Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
A magnetic element and a magnetic memory utilizing the magnetic element are described. A contact is electrically coupled to the magnetic element. The magnetic element includes pinned, nonmagnetic spacer, and free layers and a perpendicular capping layer adjoining the free layer and the contact. The free layer has an out-of-plane...

05/29/14 - 20140145277 - Magnetic device
A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein...

05/29/14 - 20140145278 - Electrostatic control of magnetic devices
A magnetic device includes a first electrode portion, a free layer portion arranged on the first electrode portion, the free layer portion including a magnetic insulating material, a reference layer portion contacting the free layer portion, the reference layer portion including a magnetic metallic layer, and a second electrode portion...

05/22/14 - 20140138782 - Magnetic sensing apparatus and manufacturing method thereof
A magnetic sensing apparatus and a manufacturing method thereof are provided. The magnetic sensing apparatus includes a substrate including a first surface having at least one first inclined plane, a first dielectric layer having at least one second inclined plane and at least one magnetic sensing device. The first dielectric...

05/22/14 - 20140138783 - Mr device with synthetic free layer structure
A magneto-resistive device having a large output signal as well as a high signal-to-noise ratio is described along with a process for forming it. This improved performance was accomplished by expanding the free layer into a multilayer laminate comprising at least three ferromagnetic layers separated from one another by antiparallel...

05/15/14 - 20140131822 - Nonvolatile magnetic memory device
A nonvolatile magnetic memory device having a magnetoresistance-effect element includes: (A) a laminated structure having a recording layer in which an axis of easy magnetization is oriented in a perpendicular direction; (B) a first wiring line electrically connected to a lower part of the laminated structure; and (C) a second...

05/15/14 - 20140131823 - Magnetoresistive element and magnetic memory using the same
According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a...

05/08/14 - 20140124880 - Magnetoresistive random access memory
A magnetic random access memory (MRAM) device includes at least one read line, at least one write line and a tunnel junction extending from the at least one read line toward the at least one write line. A heating line is connected to an opposite end of the tunnel junction...

05/08/14 - 20140124881 - Semiconductor devices and methods of fabricating the same
Provided are semiconductor devices and methods of fabricating the same. The semiconductor device may include lower wires, upper wires crossing the lower wires, select elements provided at intersections between the lower and upper wires, and memory elements provided between the select elements and the upper wires. Each of the memory...

05/08/14 - 20140124882 - Systems and methods for implementing magnetoelectric junctions having improved read-write characteristics
Embodiments of the invention implement MEJs having improved read-write characteristics. In one embodiment, an MEJ includes: ferromagnetic fixed and free layers, a dielectric layer interposed between the ferromagnetic layers, and an additional dielectric layer proximate the free layer, where the fixed layer is magnetically polarized in a first direction, where...

05/08/14 - 20140124883 - Semiconductor storage device and method of manufacturing the same
The semiconductor storage device includes a memory cell array region in which a plurality of storing MTJ elements capable of changing resistance depending on a direction of magnetization are arranged on a semiconductor substrate. The semiconductor storage device includes a resistive element region in which a plurality of resisting MTJ...

05/08/14 - 20140124884 - Semiconductor storage device
According to one embodiment, a semiconductor storage device is disclosed. The device includes first magnetic layer, second magnetic layer, first nonmagnetic layer between them. The first magnetic layer includes a structure in which first magnetic material film, second magnetic material film, and nonmagnetic material film between the first and second...

05/01/14 - 20140117476 - Balancing energy barrier between states in perpendicular magnetic tunnel junctions
Techniques are disclosed for enhancing performance of a perpendicular magnetic tunnel junction (MTJ) by implementing an additional ferromagnetic layer therein. The additional ferromagnetic layer can be implemented, for example, in or otherwise proximate either the fixed ferromagnetic layer or the free ferromagnetic layer of the perpendicular MTJ. In some embodiments,...

05/01/14 - 20140117477 - Magnetic memory devices and methods of fabricating the same
Magnetic memory devices, and methods of fabricating the same, include lower magnetic patterns arranged along first and second directions orthogonal to each other on a substrate, an upper magnetic layer covering at least two of the lower magnetic patterns arranged along the first direction and at least two of the...

05/01/14 - 20140117478 - Semiconductor memory device and method for manufacturing the same
According to one embodiment, a memory device with magnetroresistive effect element is disclosed. The element includes first metal magnetic film (MMF) with nonmagnetic element and axis of easy magnetization perpendicular (EMP), first insulating film, first intermediate magnetic film between the first MMF and the first insulating film, second MMF on...

04/24/14 - 20140110802 - Memory devices with magnetic random access memory (mram) cells and associated structures for connecting the mram cells
A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in the plurality of MRAM cells, and a second conductive layer. The first conductive layer includes a conductive portion electrically...

04/24/14 - 20140110803 - Method and system for providing magnetic tunneling junction elements having an easy cone anisotropy
A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has a magnetic...

04/24/14 - 20140110804 - Magnetoresistive device and method for forming the same
According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a free magnetic layer structure having a variable magnetization orientation, and a synthetic antiferromagnetic layer structure including at least three ferromagnetic layers arranged one over the other and antiferromagnetically coupled, each ferromagnetic layer having...

04/17/14 - 20140103469 - Seed layer for multilayer magnetic materials
A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN,...

04/17/14 - 20140103470 - Multibit cell of magnetic random access memory with perpendicular magnetization
A multi-bit cell of magnetic random access memory comprises a magnetoresistive element including first and second free layers, each free layer comprising a reversible magnetization direction directed substantially perpendicular to a layer plane in its equilibrium state and a switching current, first and second tunnel barrier layers, and a pinned...

04/17/14 - 20140103471 - Low cost high density nonvolatile memory array device employing thin film transistors and back to back schottky diodes
An improved crosspoint memory array device comprising a plurality of memory cells, each memory cell being disposed at an intersection region of bit and word conductive lines, electrically coupled to one of the first conductive lines at a first terminal and to one of the second conductive lines at a...

04/17/14 - 20140103472 - Inverted orthogonal spin transfer layer stack
A magnetic device includes a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction. The magnetic device also includes a free magnetic layer having a variable magnetization vector having at least a first stable state and a second stable state. The magnetic device also...

04/17/14 - 20140103473 - Increased magnetoresistance in an inverted orthogonal spin transfer layer stack
A magnetic device includes a pinned magnetic layer and a free magnetic layer including a first body-centered cubic material and having a variable magnetization vector that has a first stable state and a second stable state. The magnetic device also includes a first non-magnetic layer and a reference layer. The...

04/17/14 - 20140103474 - Tunneling magnetoresistance sensor
A tunneling magnetoresistance sensor includes a substrate, an insulating layer, a tunneling magnetoresistance component and a first electrode array. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is in contact with the insulating layer and includes at least one magnetic tunneling junction unit. The first electrode...

04/17/14 - 20140103475 - Semiconductor device and manufacturing method of the semiconductor device
A semiconductor device includes a substrate, a multilayer wiring layer formed over the substrate, an MTJ (Magnetic Tunnel Junction) element formed in an insulating layer located lower than an uppermost wiring layer in the multilayer wiring layer, a wiring formed in a wiring layer immediately above the MTJ element and...

04/10/14 - 20140097509 - Magnetic memory element and magnetic memory
A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to...