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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Responsive To Non-electrical Signal (e.g., Chemical, Stress, Light, Or Magnetic Field Sensors) > Physical Deformation

Physical Deformation

Physical Deformation patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

10/30/14 - 20140319627 - Chip package and a method of manufacturing the same
In various embodiments, a chip package is provided. The chip package may include at least one chip having a plurality of pressure sensor regions and encapsulation material encapsulating the chip....

10/30/14 - 20140319628 - Physical quantity detection device and physical quantity detector
A physical quantity detection device includes a glass substrate, a substrate including a physical quantity detection part and bonded to a first surface of the glass substrate with a hermetically sealed space being formed inside the substrate, and a function membrane formed on a second surface of the glass substrate...

10/23/14 - 20140312435 - Mems device with stress isolation and method of fabrication
A MEMS device (20) includes a proof mass structure (26) and beams (28, 30) residing in a central opening (32) of the proof mass structure (26), where the structure and the beams are suspended over a substrate (22). The beams (28, 30) are oriented such that lengthwise edges (34, 36)...

10/23/14 - 20140312436 - Method of fabricating mems device having release etch stop layer
A method of fabricating a microelectromechanical (MEMS) device includes bonding a transducer wafer to a substrate wafer along a bond interface. An unpatterned transducer layer included within the transducer wafer is patterned. A release etch process is then performed during which a sacrificial layer is exposed to a selected release...

10/23/14 - 20140312437 - Electronic device, integrated circuit, electronic apparatus, and moving object
An electronic device includes a vibrating element that detects a predetermined physical quantity, an integrated circuit that is electrically connected to the vibrating element, and a ceramic package. The ceramic package is provided with a first external terminal and a second external terminal to which a constant potential is supplied....

10/23/14 - 20140312438 - Physical quantity sensor, electronic apparatus, and moving object
A physical quantity sensor includes a sensor element, an integrated circuit that is electrically connected to the sensor element, and a ceramic package (base body) on which the integrated circuit is mounted. A first conductor pattern (interconnection pattern) for electrical connection with the outside is provided on one surface of...

10/09/14 - 20140299947 - Inertial angular sensor of balanced mems type and method for balancing such a sensor
An inertial angular sensor of MEMS type has a support of at least two masses which are mounted movably with respect to the support, at least one electrostatic actuator and at least one electrostatic detector. The masses are suspended in a frame itself connected by suspension means to the support....

10/02/14 - 20140291779 - Semiconductor devices and methods for manufacturing semiconductor devices
A method includes a step of performing a time multiplexed etching process, wherein the last etching step of the time multiplexed etching process is of a first time duration. After performing the time multiplexed etching process, an etching step having a second time duration is performed, wherein the second time...

10/02/14 - 20140291780 - Mems device and method of manufacturing the same
According to one embodiment, a MEMS device including a first electrode provided on a support substrate, a second electrode opposed to the first electrode, having at least one end part overlapping the first electrode, and able to move in a direction it is opposed to the first electrode, and beam...

10/02/14 - 20140291781 - Method of packaging a mems transducer device and packaged mems transducer device
A packaged MEMS transducer device comprising: a die, including: a semiconductor body having a front side and a back side, opposite to one another in a first direction, at least one cavity extending through the semiconductor body between the front side and the back side, and at least one membrane...

09/25/14 - 20140284729 - Electrical component and method of manufacturing the same
According to one embodiment, an electrical component comprises a substrate, a functional element formed on the substrate, a first layer which includes through holes, and forms a cavity that stores the functional element on the substrate, and a second layer which is formed on the first layer, and closes the...

09/25/14 - 20140284730 - Mems device and method of manufacturing the same
According to one embodiment, a MEMS device comprises a first electrode provided on a support substrate, a burying insulating film formed at the sides of the first electrode, and a second electrode opposed to the first electrode, having ends extending outside the ends of the first electrode and able to...

09/25/14 - 20140284731 - Semiconductor device
A semiconductor device includes a substrate that is made of a semiconductor material and has a main surface formed with a recess. The semiconductor device also includes a wiring layer formed on the substrate, an electronic element housed in the recess, and a sealing resin covering at least a part...

09/18/14 - 20140264643 - Methods of forming buried electromechanical structures coupled with device substrates and structures formed thereby
Methods of forming integrated MEMS structures are described. Those methods and structures may include forming at least one MEMS structure on a first substrate, forming a first bonding layer on a top surface of the first substrate, and then coupling the first bonding layer disposed on the first substrate to...

09/18/14 - 20140264644 - Mems method and structure
MEMS structures and methods utilizing a locker film are provided. In an embodiment a locker film is utilized to hold and support a moveable mass region during the release of the moveable mass region from a surrounding substrate. By providing additional support during the release of the moveable mass, the...

09/18/14 - 20140264645 - Integrated structure with bidirectional vertical actuation
A Micro-Electro-Mechanical Systems (MEMS) device includes a first substrate with a first surface and a second surface, the first substrate including a base layer, a moveable beam disposed on the base layer, at least one metal layer, and one or more standoffs disposed on the base layer such that one...

09/18/14 - 20140264646 - Microelectromechanical system and method
A microelectromechanical system, including a first element and a second element, the first element having a first conductive surface facing a second conductive surface of the second element; wherein at least one of the first element and the second element is operable to constrainedly move nearer and farther from the...

09/18/14 - 20140264647 - Method of forming monolithic cmos-mems hybrid integrated, packaged structures
A method of forming a monolithic CMOS-MEMS hybrid integrated, packaged device comprising the steps of: providing a semiconductor substrate; forming MEMS or NEMS materials on the substrate having conductive, structural, or dielectric layers; forming at least one opening(s) on the semiconductor substrate; positioning on the substrate at least one prefabricated...

09/18/14 - 20140264648 - Mems integrated pressure sensor devices and methods of forming same
A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the...

09/18/14 - 20140264649 - Micromechanical structure and corresponding production process
A micromechanical structure includes a substrate, a micromechanical functional structure, and a conductor track arrangement. The substrate has a top side, and the micromechanical functional structure is formed in the substrate on the top side. The conductor track arrangement is formed above the top side of the substrate, and the...

09/11/14 - 20140252506 - Semi-conductor sensor fabrication
Methods of fabricating semiconductor sensor devices include steps of fabricating a hermetically sealed MEMS cavity enclosing a MEMS sensor, while forming conductive vias through the device. The devices include a first semi-conductor layer defining at least one conductive via lined with an insulator and having a lower insulating surface; a...

09/11/14 - 20140252507 - Self-sealing membrane for mems devices
Embodiments of the present disclosure are related to MEMS devices having a suspended membrane that are secured to and spaced apart from a substrate with a sealed cavity therebetween. The membrane includes openings with sidewalls that are closed by a dielectric material. In various embodiments, the cavity between the membrane...

09/11/14 - 20140252508 - Mems device with a capping substrate
An integrated circuit device includes a dielectric layer disposed onto a first substrate, the dielectric layer having a sacrificial cavity formed therein. The circuit also includes a membrane layer formed onto the dielectric layer and suspended over the sacrificial cavity, and a capping substrate bonded to the membrane layer such...

09/11/14 - 20140252509 - Mems device and corresponding micromechanical structure with integrated compensation of thermo-mechanical stress
A micromechanical structure of a MEMS device, integrated in a die of semiconductor material provided with a substrate and having at least a first axis of symmetry lying in a horizontal plane, has a stator structure, which is fixed with respect to the substrate, and a rotor structure, having a...

09/11/14 - 20140252510 - Signal boosting apparatus and method of boosting signals
A signal boosting apparatus and a method of boosting signals applied in the MEMS are disclosed. The signal boosting apparatus includes a substrate, an oxide layer, and a signal transmission layer. The substrate has a doped region. The doped region has a plurality of conductive carriers. These conductive carriers have...

09/11/14 - 20140252511 - Mems apparatus
A MEMS apparatus includes a pillar, a supporter, and a solder. The pillar has a first side and a second side opposite to the first side. The supporter supports the pillar. The supporter is adjacent to the pillar, but the supporter is not connected to the pillar. The supporter has...

09/04/14 - 20140246737 - Mems vibrator, method of manufacturing mems vibrator, electronic device, and moving object
A MEMS vibrator includes an insulating portion, a first electrode provided on one surface of the insulating portion, a fixed portion, and a function portion, a second electrode provided so that at least a portion thereof overlaps the first electrode at a distance therefrom. The second electrode comes into contact...

08/28/14 - 20140239421 - Surface charge mitigation layer for mems sensors
A semiconductor device includes a substrate. At least one transducer is provided on the substrate. The at least one transducer includes at least one electrically conductive circuit element. A dielectric layer is deposited onto the substrate over the at least one transducer. A surface charge mitigation layer formed of a...

08/28/14 - 20140239422 - Electronic device, package, electronic apparatus, and moving object
A physical quantity sensor includes an IC chip and a package base mounted with the IC chip. The package base includes a first wiring layer provided with bonding pads connected to the IC chip via a bonding wire, a second wiring layer overlapping the first wiring layer in plan view,...

08/21/14 - 20140231934 - Electrical component and method of manufacturing the same
According to one embodiment, an electrical component comprises a substrate, a functional element formed on the substrate, a first layer configured to form a cavity which stores the functional element on the substrate, the first layer having through holes, the first layer having a first recessed portion and a first...

08/21/14 - 20140231935 - Multi-axial acceleration sensor and method of manufacturing the same
The present invention provides a multi-axial acceleration sensor and a method of manufacturing the multi-axial acceleration sensor. The method includes: providing a substrate having a lead plane; disposing a first sensor chip onto the lead plane, wherein a wire bonding plane of the first sensor chip is perpendicular to the...

08/21/14 - 20140231936 - Micro-electro-mechanical system (mems) and related actuator bumps, methods of manufacture and design structures
Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes and a contact point on a substrate. The method further includes forming a MEMS beam over the fixed actuator electrodes and the contact point. The method...

08/21/14 - 20140231937 - Method for manufacturing a protective layer against hf etching, semiconductor device provided with the protective layer and method for manufacturing the semiconductor device
A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by...

08/07/14 - 20140217521 - Mems device with stress relief structures
An encapsulated MEMS device includes stress-relief trenches in a region of its substrate that surrounds the movable micromachined structures and that is covered by a cap, such that the trenches are fluidly exposed to a cavity between the substrate and the cap. A method of fabricating a MEMS device includes...

07/31/14 - 20140210018 - Microelectromechanical system devices having crack resistant membrane structures and methods for the fabrication thereof
Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body...

07/31/14 - 20140210019 - Low-cost package for integrated mems sensors
An integrated MEMS sensor package is disclosed. The package comprises a sensor chip with a top surface and a bottom surface. The top surface comprises an opening. The bottom surface is attached to a substrate with electrical inter-connects. A lid is coupled to the top surface with an adhesive material....

07/24/14 - 20140203379 - Integration of laminate mems in bbul coreless package
An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers...

07/10/14 - 20140191341 - Method and apparatus for a semiconductor structure
A semiconductor structure may include a first device having first surface with a first bonding layer formed thereon and a second device having a first surface with a second bonding layer formed thereon. The first bonding layer may provide an electrically conductive path to at least one electrical device in...

07/10/14 - 20140191342 - Mems sensor
There is provided a MEMS sensor including a signal processing LSI equipped with a temperature sensor for measuring temperature of a sensor, and a MEMS sensor chip overlaid on the signal processing LSI, the MEMS sensor chip being mounted on a heat generating part of the signal processing LSI. This...

07/03/14 - 20140183669 - Resonant sensor with asymmetric gapped cantilevers
A resonant sensor is provided. The resonant sensor may have a structure including a base portion, a mass portion, and a mechanical beam connecting the base portion to the mass portion. In addition, the structure may include a first sensing beam formed from a sensing material responsive to mechanical strain...

07/03/14 - 20140183670 - Capacitive intravascular pressure-sensing devices and associated systems and methods
Intravascular devices, systems, and methods are disclosed. In some embodiments, the intravascular devices are guide wires that include a capacitive pressure-sensing component disposed at a distal portion of the guide wire. Methods of making such intravascular devices, including various manufacturing and assembling techniques, are disclosed. Systems associated with such intravascular...

06/26/14 - 20140175571 - Method for manufacturing a micromechanical system comprising a removal of sacrificial material through a hole in a margin region
A method for manufacturing a micromechanical system includes creating a sacrificial layer at a substrate surface. A structural material is deposited at a sacrificial layer surface and at a support structure for later supporting the structural material. At least one hole is created in the structural material extending from an...

06/26/14 - 20140175572 - Mems device with multiple electrodes and fabricating method thereof
A MEMS device with a first electrode, a second electrode and a third electrode is disclosed. These electrodes are disposed on a substrate in such a manner that (1) a pointing direction of the first electrode is in parallel with a normal direction of the substrate, (2) a pointing direction...

06/19/14 - 20140167188 - Reducing mems stiction by introduction of a carbon barrier
A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film is deposited between one or more polysilicon layer in a MEMS device and the TEOS-based...

06/19/14 - 20140167189 - Reducing mems stiction by deposition of nanoclusters
A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a...

06/19/14 - 20140167190 - Monolithic package for housing microelectromechanical systems
A sensor package for a microelectromechanical system (MEMS) is provided. The sensor package comprises a slot for receiving a MEMS, a bonding area in, or adjacent to, the slot for bonding the MEMS to the package and at least one package electrode to engage an electrode pad on the MEMS....

06/12/14 - 20140159174 - Flowmeter
The flowmeter includes a silicon substrate having a diaphragm where a heater is formed, an aluminum pad formed on a silicon substrate, an organic protective film laminated on the silicon substrate, and a mold resin that covers the silicon substrate. The diaphragm has an exposed portion exposed from the organic...

06/05/14 - 20140151820 - Gas-diffusion barriers for mems encapsulation
A technique for forming an encapsulated microelectromechanical system (MEMS) device includes forming an integrated circuit using a substrate, forming a barrier using the substrate, and forming a MEMS device using the substrate. The method includes encapsulating the MEMS device in a cavity. The barrier is disposed between the integrated circuit...

06/05/14 - 20140151821 - Mems structure with adaptable inter-substrate bond
A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface...

06/05/14 - 20140151822 - Structured gap for a mems pressure sensor
A method of fabricating a pressure sensor includes performing a chemical vapor deposition (CVD) process to deposit a first sacrificial layer having a first thickness onto a substrate. A portion of the first sacrificial layer is then removed down to the substrate to form a central region of bare silicon....

06/05/14 - 20140151823 - Mems devices and methods of forming same
The present invention provides a MEMS structure comprising confined sacrificial oxide layer and a bonded Si layer. Polysilicon stack is used to fill aligned oxide openings and MEMS vias on the sacrificial layer and the bonded Si layer respectively. To increase the design flexibility, some conductive polysilicon layer can be...