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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > With Permanent Threshold Adjustment (e.g., Depletion Mode) > With Gate Insulator Containing Specified Permanent Charge With Gate Insulator Containing Specified Permanent ChargeWith Gate Insulator Containing Specified Permanent Charge patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.07/19/07 - 20070164374 - Molecular memory devices including solid-state dielectric layers and related methods According to some embodiments, an article of manufacture comprises a substrate; a molecular layer on the substrate comprising at least one charge storage molecule coupled to the substrate by a molecular linker; a solid barrier dielectric layer directly on the molecular layer; and a conductive layer directly on the solid ... 06/21/07 - 20070138577 - Transistor structures The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The ... 05/31/07 - 20070120203 - Semiconductor device and method for manufacturing the semiconductor devices A semiconductor device includes a semiconductor substrate on which a source region and a drain region are formed, an insulating film formed on the semiconductor substrate and interposed between the source region and the drain region, a gate electrode formed on the insulating film, metal-bearing particles formed on the interface ... 06/29/06 - 20060138566 - Doped nitride film, doped oxide film and other doped films Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the ... 03/23/06 - 20060060928 - Semiconductor device having a gate with a thin conductive layer A semiconductor device (10) having a gate (16, 18 or 16, 18, 26, 28) with a thin conductive layer (18) is described. As the physical dimensions of semiconductor devices are scaled below the sub-micron regime, very thin gate dielectrics (16) are used. One problem encountered with very thin gate dielectrics ... 12/01/05 - 20050263833 - Apparatus for evaluating amount of charge, method for fabricating the same, and method for evaluating amount of charge A wafer for charge amount evaluation having a silicon substrate and p-type regions sandwiched between a first silicon oxide film and a SA-NSG film and surrounded by an undoped silicon film is prepared and subjected to a target process for which an amount of charge is to be evaluated. Then, ... 07/07/05 - 20050145955 - Negative differential resistance (ndr) memory device with reduced soft error rate An active negative differential resistance element (an NDR FET) and a memory device (such as an SRAM) using such elements is disclosed. Soft error rate (SER) performance for NDR FETs and such memory devices are enhanced by adjusting a location of charge traps in a charge trapping layer that is ... ### FreshPatents.com Support |