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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Insulated Gate Field Effect Transistor In Integrated Circuit > Insulated Gate Field Effect Transistors Of Different Threshold Voltages In Same Integrated Circuit (e.g., Enhancement And Depletion Mode) Insulated Gate Field Effect Transistors Of Different Threshold Voltages In Same Integrated Circuit (e.g., Enhancement And Depletion Mode)Insulated Gate Field Effect Transistors Of Different Threshold Voltages In Same Integrated Circuit (e.g., Enhancement And Depletion Mode) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/20/07 - 20070290275 - Semiconductor integrated circuit device having deposited layer for gate insulation A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main surface of a semiconductor substrate; and a second field effect transistor having a gate insulating film formed over a second ... 12/06/07 - 20070278597 - Monolithic power semiconductor structures Provided herein are exemplary embodiments of monolithic semiconductor structures having at least two lateral constructed semiconductor devices combined on a single semiconductor substrate. ... 11/15/07 - 20070262395 - Memory cell access devices and methods of making the same Planar access transistor devices and recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode. ... 10/11/07 - 20070235817 - Write margin improvement for sram cells with sige stressors A semiconductor structure including SRAM cells with improved write margins and a method for forming the same are provided. The semiconductor structure comprises a substrate including a core circuit and an SRAM cell. The SRAM cell includes a pull-up PMOS device that comprises a first source/drain region in the substrate, ... 03/08/07 - 20070052041 - Semiconductor device and method of fabricating the same A semiconductor device according to this invention includes: a first insulating layer (11); a first body section (13) including an island-shaped semiconductor formed on the first insulating layer; a second body section (14) including an island-shaped semiconductor formed on the first insulating layer; a ridge-shaped connecting section (15) formed on ... 01/18/07 - 20070013009 - Semiconductor device including i/o oxide and nitrided core oxide on substrate, and method of manufacture A semiconductor device includes a semiconductor substrate, wherein the semiconductor substrate includes a core area for core circuits and a peripheral area for peripheral circuits. The semiconductor device includes a core oxide on the semiconductor substrate in the core area, a portion of the core oxide being nitrided, a first ... 12/07/06 - 20060273406 - Semiconductor integrated circuit device having deposited layer for gate insulation A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main surface of a semiconductor substrate; and a second field effect transistor having a gate insulating film formed over a second ... 10/19/06 - 20060231905 - Electronic device comprising a field effect transistor for high-frequency aplications An electronic device comprising a field-effect transistor having an inter digitated structure suitable for high-frequency power applications, and having multiple threshold voltages that are provided in different regions of each a segment of the interdigitated structure. This leads to a dramatic improvement in linearity over a large power range in ... 09/28/06 - 20060214237 - Using different gate dielectrics with nmos and pmos transistors of a complementary metal oxide semiconductor integrated circuit Complementary metal oxide semiconductor integrated circuits may be formed with NMOS and PMOS transistors having different gate dielectrics. The different gate dielectrics may be formed, for example, by a replacement process. The gate dielectrics may differ in material, thickness, or formation techniques, as a few examples. ... 09/21/06 - 20060208323 - Dual gate dielectric thickness devices A semiconductor device and a method of fabricating the semiconductor device, the semiconductor device including: one or more FETs of a first polarity and one or more FETs of a second and opposite polarity, at least one of the one or more FETs of the first polarity having a gate ... 08/03/06 - 20060170065 - Semiconductor device and method for fabricating the same In a semiconductor device according to the present invention, the power source voltage Vdd1 of a core transistor Tr1, the power source voltage Vdd2 of an I/O transistor Tr2, and the power source voltage Vdd3 of an I/O transistor Tr3 satisfy Vdd1<Vdd2<Vdd3. In a method for fabricating the semiconductor device, ... 06/01/06 - 20060113612 - Insulated-gate semiconductor device and approach involving junction-induced intermediate region Semiconductor device performance is improved via an insulated-gate PIN-type structure that is adapted to abruptly switch between conductance states by modulating an electric field in the intermediate (I) region. According to an example embodiment of the present invention, an insulated gate-type structure includes a body with first and second end ... 05/18/06 - 20060102968 - Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide A semiconductor structure is provided that includes a Vt stabilization layer between a gate dielectric and a gate electrode. The Vt stabilization layer is capable of stabilizing the structure's threshold voltage and flatband voltage to a targeted value and comprises a nitrided metal oxide, or a nitrogen-free metal oxide, with ... 04/20/06 - 20060081946 - Method of manufacturing a thin film transistor device In a case of a liquid crystal display apparatus, a gate insulating film of a TFT driven at a low voltage (3.3 V or 5 V) is constituted by one insulating film, and a thickness thereof is set to, for example, 30 nm. This TFT has a structure in which ... 02/23/06 - 20060038240 - Semiconductor device and manufacturing method of the same An n-type embedded layer is formed in an N-LV region of a SRAM cell region after an element isolation insulating film is formed on a p-type Si substrate. Thereafter, a p-well and an n-well are formed. In formation of a channel-doped layer, ion implantation is also performed into the N-LV ... 02/16/06 - 20060033169 - Thin film transistor device and method of manufacturing the same A first insulating film is formed. Then, a gate electrode of a low voltage drive thin film transistor and a mask film for covering a region constituting a channel of a high voltage drive thin film transistor are formed with a molybdenum film on the first insulating film. An impurity ... 02/09/06 - 20060027880 - Semiconductor device including a high-breakdown voltage mos transistor On a semiconductor substrate, a well is formed. In the well, one MOS transistor including a gate electrode, a source region, a source field limiting layer and a source/drain region, and another MOS transistor including a gate electrode, a drain electrode, a drain field limiting layer and a source/drain region ... 02/02/06 - 20060022281 - Semiconductor device There is provided a semiconductor device in which a plurality of field effect transistors with different breakdown voltage of a gate insulating film are provided on the same substrate by simple process. In the semiconductor device 100 having a high breakdown voltage transistor 102 and a low breakdown voltage transistor ... 09/15/05 - 20050199966 - Dual work function semiconductor structure with borderless contact and method of fabricating the same A dual work function semiconductor structure with borderless contact and method of fabricating the same are presented. The structure may include a field effect transistor (FET) having a substantially cap-free gate and a conductive contact to a diffusion adjacent to the cap-free gate, wherein the conductive contact is borderless to ... 08/04/05 - 20050167762 - Semiconductor device and manufacturing method thereof A technique capable of reducing threshold voltage and reducing high-temperature heat treatment after forming a gate electrode is provided. An n-type MIS transistor or a p-type MIS transistor is formed on an active region isolated by an element isolation region of a semiconductor substrate. In the n-type MIS transistor, a ... 08/04/05 - 20050167761 - Semiconductor device and its manufacturing method selectively etching and removing the upper insulating film 103 on the part of region 105 by use of mask 107 and utilizing multi-oxide process while reducing leak electric current. ... 06/16/05 - 20050127457 - Signal charge converter for charge transfer element A signal converter, for converting signal charge into a voltage, comprises a first driver FET for a first stage that receives the signal charge. A subsequent driver FET is coupled to an output of the first driver FET, and a gate dielectric thickness of the subsequent driver FET is decreased. ... ### FreshPatents.com Support |