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Polysilicon Resistor

Polysilicon Resistor patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

Related Categories:

Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Insulated Gate Field Effect Transistor In Integrated Circuit > Combined With Passive Components (e.g., Resistors) > Polysilicon Resistor



Semiconductor unit and electronic apparatus
11/20/14 - 20140339644 - A semiconductor unit includes: a transistor configured to provide electrical conduction between a first terminal and a second terminal, based on a trigger signal; and a trigger device formed in a transistor region where the transistor is formed, and configured to generate the trigger signal, based on a voltage applied...

Variable resistance device having parallel structure
11/06/14 - 20140327085 - A variable resistance device includes a parallel structure. The variable resistance device is formed using a silicon (Si) substrate. In the variable resistance device, a conductive line arranged in a current direction is formed over an impurity region, and a resistance value of the resistance device is precisely adjusted by...

Semiconductor device and method for forming same
11/06/14 - 20140327086 - A system and method for forming a resistor system is provided. An embodiment comprises a resistor formed in a U-shape. The resistor may comprise multiple layers of conductive materials, with a dielectric layer filling the remainder of the U-shape. The resistor may be integrated with a dual metal gate manufacturing...

Semiconductor structure with suppressed sti dishing effect at resistor region
07/17/14 - 20140197496 - An integrated circuit includes a semiconductor substrate; a first shallow trench isolation (STI) feature of a first width and a second STI feature of a second width in a semiconductor substrate. The first width is less than the second width. The first STI feature has an etch-resistance less than that...

Embedded polysilicon resistor in integrated circuits formed by a replacement gate process
07/03/14 - 20140183657 - An embedded resistor structure in an integrated circuit that can be formed in a replacement gate high-k metal gate metal-oxide-semiconductor (MOS) technology process flow. The structure is formed by etching a trench into the substrate, either by removing a shallow trench isolation structure or by silicon etch at the desired...

Poly resistor for metal gate integrated circuits
07/03/14 - 20140183658 - An integrated circuit containing a metal gate transistor and a thin polysilicon resistor may be formed by forming a first layer of polysilicon and removed it in an area for the thin polysilicon resistor. A second layer of polysilicon is formed over the first layer of polysilicon and in the...

Ztcr poly resistor in replacement gate flow
06/19/14 - 20140167182 - An integrated circuit having a replacement gate MOS transistor and a polysilicon resistor may be formed by removing a portion at the top surface of the polysilicon layer in the resistor area. A subsequently formed gate etch hard mask includes a MOS hard mask segment over a MOS sacrificial gate...

Precision resistor for non-planar semiconductor device architecture
03/27/14 - 20140084381 - Precision resistors for non-planar semiconductor device architectures are described. In a first example, a semiconductor structure includes first and second semiconductor fins disposed above a substrate. A resistor structure is disposed above the first semiconductor fin but not above the second semiconductor fin. A transistor structure is formed from the...

Semiconductor device with resistance circuit
02/27/14 - 20140054719 - A semiconductor device has a resistance circuit including a resistance element as a first thin film arranged on an isolation oxide film provided on a surface of a semiconductor substrate, a second thin film comprised of silicon nitride formed on the first thin film, an intermediate insulating film formed on...

High voltage device with a parallel resistor
01/23/14 - 20140021560 - Provided is a high voltage semiconductor device. The high voltage semiconductor device includes a transistor having a gate, a source, and a drain. The source and the drain are formed in a doped substrate and are separated by a drift region of the substrate. The gate is formed over the...

Resistor integrated with transistor having metal gate
11/21/13 - 20130307084 - A method of manufacturing a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, a transistor is positioned in the transistor region and a resistor is positioned in the resistor region; forming a dielectric layer exposing tops...

High voltage switching device the method for forming thereof
10/24/13 - 20130277755 - A high voltage switching device and associated method of manufacturing, the high voltage switching device having a substrate, an epitaxial layer, a source region, a drain region, a drift region, a gate oxide, a filed oxide, a gate and a snake shaped poly....

Semiconductor device and method for fabricating the same
09/19/13 - 20130241001 - A method for fabricating a semiconductor device is described. A substrate having thereon a polysilicon resistor is provided. A dielectric layer is formed over the substrate covering the polysilicon resistor. The dielectric layer is etched to form a contact opening over the polysilicon resistor, with overetching into the polysilicon resistor....

Resistor and manufacturing method thereof
09/19/13 - 20130241002 - A method of manufacturing a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, a transistor is positioned in the transistor region and a resistor is positioned in the resistor region; forming a dielectric layer exposing tops...

Integrated circuit having silicide block resistor
08/08/13 - 20130200466 - A method for forming an integrated circuit (IC) including a silicide block poly resistor (SIBLK poly resistor) includes forming a dielectric isolation region in a top semiconductor surface of a substrate. A polysilicon layer is formed including patterned resistor polysilicon on the dielectric isolation region and gate polysilicon on the...

Integrated circuit resistor
05/16/13 - 20130119480 - A semiconductor device includes a substrate including an isolation region, and a resistor disposed over the isolation region, wherein the resistor includes an implant with an inverse box-like dopant profile that minimizes resistance variation from subsequent planarization variation. A contact is disposed over the resistor. A method of fabricating such...

Semiconductor device and method of manufacturing the same
02/21/13 - 20130043542 - A polysilicon film that serves as a resistance element is formed. The polysilicon film is patterned to a predetermined shape. CVD oxide films covering the patterned polysilicon film are etched thereby removing the portion of the CVD oxide film where the contact region is formed, leaving the portion covering the...

Method of forming polysilicon resistor during replacement metal gate process and semiconductor device having same
01/17/13 - 20130015530 - A method for manufacturing a semiconductor device, comprising forming a first gate stack portion on a substrate, the first gate stack portion including a first gate oxide layer and a first polysilicon layer on the first gate oxide layer, forming a second gate stack portion on the substrate, the second...

Method of forming polysilicon resistor during replacement metal gate process and semiconductor device having same
01/17/13 - 20130015531 - A method for manufacturing a semiconductor device, comprising forming a first gate stack portion on a surface of a substrate, the first gate stack portion including a first gate oxide layer and a first polysilicon layer on the first gate oxide layer, forming a second gate stack portion on the...

Methods of manufacturing gates for preventing shorts between the gates and self-aligned contacts and semiconductor devices having the same
01/17/13 - 20130015532 - A method for manufacturing a semiconductor device, comprising forming a metal gate of a transistor on a substrate by a replacement metal gate process, wherein an insulating layer is formed on the substrate adjacent the metal gate, forming a hard mask on the substrate including the insulating layer and the...

Integrated circuits with resistors and methods of forming the same
08/30/12 - 20120217586 - A method of forming an integrated circuit includes forming at least one transistor over a substrate. The at least one transistor includes a first gate dielectric structure disposed over a substrate. A work-function metallic layer is disposed over the first gate dielectric structure. A conductive layer is disposed over the...

Semiconductor surround gate sram storage device
07/19/12 - 20120181622 - It is intended to achieve a sufficiently-small SRAM cell area and a stable operation margin in an E/R type 4T-SRAM comprising a vertical transistor SGT. In a static type memory cell made up using four MOS transistors and two load resistor elements, each of the MOS transistor constituting the memory...

Breakdown voltage improvement with a floating substrate
05/24/12 - 20120126334 - The present disclosure provides a semiconductor device that includes a substrate having a resistor element region and a transistor region, a floating substrate in the resistor element region of the substrate, an epitaxial layer disposed over the floating substrate, and an active region defined in the epitaxial layer, the active...

Method and structure for gate height scaling with high-k/metal gate technology
05/24/12 - 20120126335 - A method and structure to scale metal gate height in high-k/metal gate transistors. A method includes forming a dummy gate and at least one polysilicon feature, all of which are formed from a same polysilicon layer and wherein the dummy gate is formed over a gate metal layer associated with...

Polysilicon resistors formed in a semiconductor device comprising high-k metal gate electrode structures
03/01/12 - 20120049291 - In sophisticated semiconductor devices, resistors may be provided together with high-k metal gate electrode structures by using a polycrystalline silicon material without requiring a deterioration of the crystalline nature and thus conductivity of a conductive metal-containing cap material that is used in combination with the high-k dielectric gate material. In...

Novel poly resistor and poly efuse design for replacement gate technology
12/15/11 - 20110303989 - Methods for fabricating a semiconductor device are disclosed. In an example, a method includes forming an isolation region on a substrate, wherein the isolation region extends a depth into the substrate from a substrate surface; forming a recess in the isolation region, wherein the recess is defined by a concave...

Integrated resistor using gate metal for a resistive element
08/18/11 - 20110198705 - According to one disclosed embodiment, a method for fabricating an integrated resistor in a semiconductor die includes forming a high-k dielectric over a substrate and a metal layer over the high-k dielectric, where the metal layer forms a resistive element of the integrated resistor. The method further includes forming an...

Semiconductor device and method for fabricating the same
07/14/11 - 20110169100 - A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric...

Low capacitance precision resistor
07/07/11 - 20110163389 - A precision low capacitance resistor is formed, e.g., in a bulk substrate. An embodiment includes forming a source/drain region on a substrate, patterning a portion of the source/drain region to form segments, etching the segments to substantially separate an upper section of each segment from a lower section of each...

Semiconductor device and process for producing the same
06/09/11 - 20110133290 - A semiconductor device of high reliability and element-integrating performance, has a substrate (silicon substrate), a first trench made in the silicon substrate, a passive element layer buried in the first trench, and a first insulating film (silicon nitride film) arranged between the first trench and the passive element layer. The...

Metal gate transistor with resistor
03/31/11 - 20110073957 - A resistor is disclosed. The resistor is disposed on a substrate, in which the resistor includes: a dielectric layer disposed on the substrate; a polysilicon structure disposed on the dielectric layer; two primary resistance structures disposed on the dielectric layer and at two ends of the polysilicon structure; and a...

Polysilicon design for replacement gate technology
03/10/11 - 20110057267 - The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature....

Semiconductor device and method for fabcricating the same
03/10/11 - 20110057268 - A semiconductor device includes a resistive element and a MISFET. The resistive element includes a first conductive film formed on the semiconductor substrate and containing a metal, a second conductive film formed on the first conductive film and containing silicon, and an insulating film formed between the first conductive film...

Semiconductor devices in which a cell gate pattern and a resistor pattern are formed of a same material and methods of forming the same
02/10/11 - 20110031559 - A semiconductor device is formed by providing a semiconductor substrate comprising a cell region, a peripheral circuit region, and a resistor region, forming a device isolation layer on the semiconductor substrate so as to define an active region, forming a first insulating layer and a polysilicon pattern on the active...

Non-planar embedded polysilicon resistor
12/30/10 - 20100327370 - The present invention discloses a method comprising: forming a sacrificial polysilicon gate (of a transistor) and a polysilicon resistor; and replacing said sacrificial polysilicon gate (of said transistor) with a metal gate while covering said polysilicon resistor....

Metal gate transistor and resistor and method for fabricating the same
12/23/10 - 20100320544 - A method for fabricating metal gate transistor and resistor is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation in the substrate of the resistor region; forming a tank in the shallow trench isolation of the...

Resistor of semiconductor device and method of forming the same
11/25/10 - 20100295133 - The resistor of a semiconductor device comprises a semiconductor substrate comprising isolation layers and active regions, a gate insulating layer and a first polysilicon layer formed over the active region, a second polysilicon layer separated into a first pattern formed on the isolation layer, and a second pattern formed over...

Semiconductor device and method of manufacturing a semiconductor device
11/18/10 - 20100289087 - A semiconductor substrate with an active element formed in the semiconductor substrate, an element isolating insulating film formed around the active element and semiconductor substrate, a polysilicon resistance element formed over the element isolating insulating film with terminal areas and a resistance portion formed between the terminal areas, the polysilicon...

Method and structure for gate height scaling with high-k/metal gate technology
09/23/10 - 20100237435 - A method and structure to scale metal gate height in high-k/metal gate transistors. A method includes forming a dummy gate and at least one polysilicon feature, all of which are formed from a same polysilicon layer and wherein the dummy gate is formed over a gate metal layer associated with...

Dual gate structure on a same chip for high-k metal gate technology
03/04/10 - 20100052072 - A semiconductor device and method for fabricating a semiconductor device is disclosed. The method includes providing semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer, forming a metal layer over the...

Semiconductor resistor formed in metal gate stack
01/28/10 - 20100019328 - A semiconductor process and apparatus fabricate a metal gate electrode (30) and an integrated semiconductor resistor (32) by forming a metal-based layer (26) and semiconductor layer (28) over a gate dielectric layer (24) and then selectively implanting the resistor semiconductor layer (28) in a resistor area (97) to create a...

Metal gate transistor and polysilicon resistor and method for fabricating the same
09/24/09 - 20090236669 - A method for fabricating metal gate transistors and a polysilicon resistor is disclosed. First, a substrate having a transistor region and a resistor region is provided. A polysilicon layer is then formed on the substrate to cover the transistor region and the resistor region of the substrate. Next, a portion...