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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > With Overvoltage Protective Means > For Protecting Against Gate Insulator Breakdown > In Complementary Field Effect Transistor Integrated Circuit > Including Resistor Element Including Resistor ElementIncluding Resistor Element patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.05/31/07 - 20070120193 - Esd protection device An ESD protection device includes: a semiconductor substrate of a first conductivity type having a first major surface and a second major surface; a signal input electrode formed on the first major surface of the semiconductor substrate; a base region of a second conductivity type formed on a surface region ... 11/09/06 - 20060249793 - Nonlinear via arrays for resistors to reduce systematic circuit offsets A thin film resistor structure includes a plurality of thin film resistor sections. Conductive vias (5) are disposed on a first end of each of the thin film resistor sections, respectively. The first conductor (2) is connected to the vias of the first end, and a second conductor (3) is ... 02/02/06 - 20060022274 - Semiconductor integrated circuit device Provided is a structure in which a gate electrode of an MMOS transistor of a fully depleted SOT CMOS circuit formed on a semiconductor thin film has an N-type conductivity, while a gate electrode of an protection NMOS transistor as an ESD input/output protection element formed on a semiconductor support ... 01/12/06 - 20060006472 - Phase change memory with extra-small resistors A phase change memory cell comprises of multiple resistors. In one design, the resistor layer is a layer with a plurality of resistors embedded in an insulator layer which is sandwiched between the electrodes. In the other design, a combination of a heater layer with a plurality of heaters and ... 01/12/06 - 20060006471 - Resistor with improved switchable resistance and non-volatile memory device Provides a resistor with improved switchable resistance and non-volatile memory device. An example resistor includes a first electrode, a second electrode facing the first electrode and a resistance structure between the first electrode and the second electrode. The resistance structure includes an insulating dielectric material in which a confined switchable ... 08/18/05 - 20050179089 - Semiconductor device Extending from an upper surface of an n− semiconductor layer on a p− semiconductor substrate to the interface between the n− semiconductor layer and the p− semiconductor substrate, a p+ impurity region is provided. The p+ impurity region defines a high-potential island region, a low-potential island region and a slit ... 06/23/05 - 20050133872 - Two-layer patterned resistor A technique for fabricating a patterned resistor on a substrate produces a patterned resistor (101, 801, 1001, 1324, 1374) including two conductive end terminations (110, 810, 1010) on the substrate, a pattern of first resistive material (120, 815, 1015) having a first width (125) and a first sheet resistance, and ... 06/16/05 - 20050127446 - Semiconductor device and method for manufacturing semiconductor device With this method for manufacturing a semiconductor device, a gate insulating film is formed on a semiconductor substrate, and a polysilicon thin film is formed on the gate insulating film. A plasma nitriding process is then performed, thereby introducing nitrogen into the polysilicon thin film. A polysilicon film is next ... ### FreshPatents.com Support - Terms & Conditions |