REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > With Overvoltage Protective Means With Overvoltage Protective MeansWith Overvoltage Protective Means patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/20/07 - 20070290266 - Turn-on-efficient bipolar structures for on-chip esd protection A semiconductor device suitable for applications in an electrostatic discharge (ESD) protection circuit, including a semiconductor substrate, a first well formed in the substrate, a second well formed in the substrate, and a first doped region formed in the second well, wherein the first well, the second well, and the ... 12/06/07 - 20070278580 - Semiconductor integrated circuit device A semiconductor integrated circuit device according to an embodiment of the present invention includes: a semiconductor substrate; an internal circuit formed on the semiconductor substrate, a first potential and a second potential being supplied to the internal circuit, thereby applying an operating voltage to the internal circuit; a fuse disposed ... 11/15/07 - 20070262386 - Esd protection element and esd protection device for use in an electrical circuit An ESD protection element for use in an electrical circuit having a fin structure or a fully depleted silicon-on-insulator structure. The fin structure or the fully depleted silicon-on-insulator structure contains a first connection region having a first conductivity type; a second connection region having a second conductivity type, which is ... 11/01/07 - 20070252212 - Improved cmos diodes with dual gate conductors, and methods for forming the same The present invention provides an improved CMOS diode structure with dual gate conductors. Specifically, a substrate comprising a first n-doped region and a second p-doped region is formed. A third region of either n-type or p-type conductivity is located between the first and second regions. A first gate conductor of ... 10/18/07 - 20070241406 - Electrostatic discharge protector for an integrated circuit An integrated circuit has functional circuitry coupled to a terminal. An electrostatic discharge protector can be coupled to the terminal to protect the functional circuitry from an electrostatic discharge. A substrate includes a first semiconductor material with a first dopant type. A plurality of drain segments adjoin the substrate. Each ... 10/11/07 - 20070235808 - Substrate-biased silicon diode for electrostatic discharge protection An integrated circuit device that includes a semiconductor substrate, a well region formed inside the semiconductor substrate, a first isolation structure formed inside the well region, a second isolation structure formed inside the well region and spaced apart from the first isolation structure, a dielectric layer formed over the well ... 09/20/07 - 20070215949 - Semiconductor device including mos transistor having locos offset structure and manufacturing method thereof A disclosed semiconductor device includes: a semiconductor substrate; at least one normal transistor disposed on the semiconductor substrate; and at least one LOCOS offset transistor disposed on the semiconductor substrate. The normal transistor has an LDD region between a channel and a source and between the channel and a drain. ... 09/13/07 - 20070210384 - Substrate-based silicon diode for electrostatic discharge protection An integrated circuit device is disclosed that includes a semiconductor substrate, a well region formed inside the semiconductor substrate, and a first isolation structure formed inside the well region. Further, a second isolation structure is formed inside the well region and spaced apart from the first isolation structure, a dielectric ... 08/23/07 - 20070194380 - Method for fabricating an esd protection apparatus for discharging electric charge in a depth direction To make electric current concentration and electric field concentration hardly take place in junction parts even in case of performing miniaturization and to achieve triggering at low voltage. An ESD protection apparatus is installed between an input terminal 6 of a semiconductor integrated circuit chip and a CMOS transistor 100 ... 08/02/07 - 20070176239 - Trenched mosfets with improved esd protection capability A semiconductor power device includes Zener diodes for providing an electrostatic discharge (ESD) protection. The semiconductor power device further includes a thick insulation layer for substantially insulating the Zener diodes from a doped region doped with the body dopant ions of the semiconductor power device whereby the Zener diode is ... 07/19/07 - 20070164362 - System and method for i/o esd protection with floating and/or biased polysilicon regions A system and method for electrostatic discharge protection. The system includes a plurality of transistors. The plurality of transistors includes a plurality of gate regions, a plurality of source regions, and a plurality of drain regions. The plurality of source regions and the plurality of drain regions are located within ... 07/12/07 - 20070158748 - Resistor structure for esd protection circuits A semiconductor device includes an ESD protection device on a substrate, and a resistor having a gate structure overlying a resistor well separating a first doped region coupled to the ESD protection device and a second doped region coupled to a supply voltage for passing an ESD current from the ... 07/05/07 - 20070152274 - Semiconductor device A semiconductor device, including: a semiconductor substrate of a first conduction type; an active region used as a function-element-forming region on the semiconductor substrate; a low-resistance region of a second conduction type formed on an outermost periphery of the active region to surround the active region and having contact with ... 06/14/07 - 20070132030 - Esd protection circuits and related techniques An electro-static discharge, ESD, protection circuit is disclosed. While protecting an ESD event between a given pad and a ground pad, the ESD protection circuit triggers a clamp for ESD protection according to a voltage difference between the given pad and a power pad. Generally, chips already have capacitance between ... 06/14/07 - 20070132029 - Esd protection for passive integrated devices Methods and apparatus are provided for ESD protection of integrated passive devices (IPDs). The apparatus comprises one or more IPDs having terminals or other elements potentially exposed to ESD transients coupled by charge leakage resistances having resistance values much larger than the ordinary impedance of the IPDs at the operating ... 05/31/07 - 20070120192 - Method and apparatus that provides differential connections with improved esd protection and routing The present invention provides a single ESD device package that can be used to provide ESD protection to multiple high-speed lines, in particular multiple high-speed differential lines. The present invention has various aspects. Minute parasitic matching is achieved within a single package, and TMDS signal discontinuities are reduced by allowing ... 05/31/07 - 20070120191 - High trigger current electrostatic discharge protection device An electrostatic discharge protection device with a high trigger current includes a semiconductor layer, a well region formed in the semiconductor layer, an anode region formed in the well region, a cathode region formed in the semiconductor layer, a bridging region bridging a junction between the semiconductor layer and the ... 05/31/07 - 20070120190 - Electrostatic discharge (esd) protection structure and a circuit using the same An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure comprises an active device. The active device includes a plurality of drains. Each of the drains has a contact row and at least one body contact row. The at least one body contact row is located on the ... 05/24/07 - 20070114611 - Structure and method for mosfet with reduced extension resistance The present invention provides a method in which a low-resistance connection between the MOS channel and silicided source/drain regions is provided that has an independence from the extension ion implant process as well as device overlap capacitance. The method of the present invention broadly includes selectively removing outer spacers of ... 05/10/07 - 20070102764 - Multiple-gate transistors formed on bulk substrates According to one embodiment, an information storage medium, and the program comprises referring to a manifest from a playlist that manages playback presentation of a playback presentation object, referring to one of a markup and a script from the manifest, monitoring defining of a name corresponding to an event in ... 05/03/07 - 20070096214 - Electrostatic discharge protection circuit and driving circuit for an lcd using the same An exemplary ESD protection circuit includes first and second sets of transistors and an ESD discharge transistor. Each of the transistors includes a source electrode, a drain electrode, and a gate electrode. The drain electrodes and gate electrodes of each of the transistors are connected to each other, and the ... 05/03/07 - 20070096213 - Electro-static discharge protection circuit An electrostatic discharge protection circuit comprises a pad, a first transistor, a second transistor, and a diode. Wherein, the first transistor comprises the gate, a first source-drain, and a second source-drain. The first source-drain of the first transistor is electrically coupled to the pad, and the second source-drain of the ... 04/26/07 - 20070090460 - Electrostatic protection systems and methods Systems and methods are disclosed herein to provide improved electrostatic protection for electrical circuits. For example, in accordance with an embodiment of the present invention, an electrostatic protection device includes: a drain region formed in a substrate; a gate separated from the substrate by a gate oxide; and an isolation ... 04/19/07 - 20070085141 - Information playback system using information storage medium According to one embodiment, there is provided a data processing method. The method includes reading management information indicative of a playback and display procedure, acquiring a content from a certain storage position at a timing determined based on the management information, and performing playback and display of the content at ... 04/05/07 - 20070075370 - Thermal sensing method and apparatus using existing esd devices The present invention provides a method, an apparatus, and a computer program product for measuring the temperature of a microprocessor through the use of ESD circuitry. The present invention uses diodes and an I/O pad within ESD circuits to determine the temperature at the location of the ESD circuitry. First, ... 03/29/07 - 20070069297 - Tri-states one-time programmable memory (otp) cell A method of performing a programming, testing and trimming operation is disclosed in this invention. The method includes a step of applying a programming circuit for programming an OTP memory for probing and sensing one of three different states of the OTP memory for carrying out a trimming operation using ... 03/22/07 - 20070063285 - Power supply apparatus In a power supply apparatus in which a source of a MOSFET is connected to a node of a rectifier diode and a choke coil through a resonance coil, a series circuit including a capacitor and a MOSFET i s connected to a series circuit including the resonance coil and ... 03/15/07 - 20070057327 - Lcd source driver for improving electrostatic discharge In an LCD source driver, to enhance the ESD performance thereof, there is provided a path in a device area penetrating thereacross such that an internal power wire or an internal ground wire to connect between an output pad and a power-rail ESD clamp circuit on two margins, respectively, of ... 03/08/07 - 20070052031 - Semiconductor device and method for manufacturing the same It is made possible to easily set a protection voltage even when a semiconductor device to be protected includes a gate insulating film having a low dielectric breakdown voltage. A semiconductor device includes: a MOS transistor including a first gate insulating film provided on a first element region of first ... 03/08/07 - 20070052030 - Electrostatic discharge device with controllable holding current An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped region and a first P+ doped region, and a second distance is kept between a second P+ doped region and a ... 03/08/07 - 20070052029 - Electrostatic discharge protection structure The invention provides an ESD protection structure, compatible with the bipolar-CMOS-DMOS (BCD) processes, which provides an enhanced protection performance and better heat dissipation performance. The design of the ESD structures in present invention takes advantage of bipolar punch characteristics of the parasitic bipolar structure to bypass the ESD current, thus ... 03/01/07 - 20070045744 - Semiconductor integrated circuit apparatus Semiconductor integrated circuit apparatus capable of raising detection sensitivity of a leakage current detection circuit and improving response. A semiconductor integrated circuit apparatus has a substrate voltage control block that supplies a substrate voltage to an internal circuit and controls NchMOS transistor threshold voltage of the internal circuit, and a ... 03/01/07 - 20070045743 - Device for electrostatic discharge protection A device for electrostatic discharge (ESD) protection is disclosed. The device for electrostatic discharge protection comprises a lateral bipolar transistor and a diode. The semiconductor transistor has an emitter, a base and a collector electrically connected to a first power line (such as Vdd), a second power line (such as ... 02/22/07 - 20070040221 - Electrostatic discharge protection element A gate controlled fin resistance element for use as an electrostatic discharge (ESD) protection element in an electrical circuit has a fin structure having a first connection region, a second connection region and a channel region formed between the first and second connection regions. Furthermore, the fin resistance element has ... 02/22/07 - 20070040220 - An electrostatic discharge circuit An electrostatic discharge circuit includes at least an electrostatic discharge zener diode, an NMOS transistor, and a PMOS transistor. The electrostatic discharge zener diode is used for lowering the breakdown voltage and making the electrical current discharge through it, thereby preventing the circuit device from burning out and greatly enhancing ... 02/15/07 - 20070034959 - Integrated circuit arrangements with esd-resistant capacitor and corresponding method of production A circuit arrangement including a capacitor in an n-type well is disclosed. A specific polarization of the capacitor ensures that a depletion zone arises in the well and the capacitor has a high ESD strength. An optionally present auxiliary doping layer ensures a high area capacitance of the capacitor despite ... 02/15/07 - 20070034958 - Electro-static discharge protecting device and method for fabricating the same Provided are an ESD protecting device and a method for fabricating the same. The ESD protecting device includes a semiconductor substrate having a first conductivity type, the semiconductor substrate having a field region and an active region; first and second device isolation layers formed in the field region; a first ... 02/15/07 - 20070034957 - Electrostatic foot for non-permanent attachment An apparatus in one example has: an electrostatic device having an engagement portion; and an attractive electrostatic force selectively applicable by the electrostatic device to the engagement portion for at least one of holding the electrostatic device or providing locomotion to the electrostatic device. ... 02/15/07 - 20070034956 - Embedded silicon-controlled rectifier (scr) for hvpmos esd protection A high voltage p-type metal oxide semiconductor (HVPMOS) device having electrostatic discharge (ESD) protection functions and a method of forming the same are provided. The HVPMOS includes a PMOS transistor, wherein the PMOS transistor comprises a first source/drain region doped with a p-type impurity in a high voltage p-well (HVPW) ... 02/08/07 - 20070029615 - Active matrix substrate and repairing method thereof An active matrix substrate including a substrate, a plurality of pixel units, a plurality of driving lines, an electron static discharge (ESD) protection circuit and a floating line is provided. The substrate has an active region and a peripheral region connected with the active region. The pixel units are arranged ... 02/01/07 - 20070023840 - Dose rate event protection clamping circuit A novel system for protecting one or more circuits during a dose rate event is presented. A clamping circuit is utilized that outputs a voltage signal that may be used to control prevent circuits from receiving input signals during a dose rate event. The clamping circuit comprises a photocurrent generating ... 01/11/07 - 20070007598 - System and method for esd protection An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programable attenuation and a programable gain low noise amplifier. Frequency conversion circuitry advantageously uses LC filters integrated onto the substrate in conjunction with image reject mixers ... 01/11/07 - 20070007597 - Esd structure having different thickness gate oxides An electrostatic discharge (ESD) structure having increased voltage withstand at an output terminal of an integrated circuit device has a thin gate oxide layer metal oxide semiconductor (MOS) device coupled in series with a thicker gate oxide layer MOS device. The thin gate oxide layer MOS device may be controlled ... 01/04/07 - 20070001229 - Electrostatic discharge device having controllable trigger voltage An electrostatic discharge (ESD) device has a parasitic SCR structure and a controllable trigger voltage. The controllable trigger voltage of the ESD device is achieved by modulating a distance between an edge of a lightly doped well and an edge of a heavily doped region located at two ends of ... 12/28/06 - 20060289935 - Layout structure for esd protection circuits A layout structure for an ESD protection circuit includes a first MOS device area having a first and second doped regions of the same polarity disposed at two sides of a first conductive gate layer, and a third doped region disposed along the first doped region at one side of ... 12/21/06 - 20060284257 - Display substrate and apparatus and method for testing display panel having the same A display substrate includes a gate pad part, a source pad part, a first static dissipative part, and a first test part. A gate pad part is formed on one terminal of each of a plurality of gate lines and transfers signals to the gate lines. A source pad part ... 12/21/06 - 20060284256 - Layout structure for esd protection circuits The present invention provides a layout structure for an electrostatic discharge (ESD) protection circuit. The layout structure includes a first MOS device area, a second MOS device area, and a doped region. The first MOS device area has at least one source/drain region of a first polarity type. The second ... 12/14/06 - 20060278928 - Semiconductor layout structure for esd protection circuits A semiconductor layout structure for an electrostatic discharge (ESD) protection circuit is disclosed. The semiconductor layout structure includes a first area, in which one or more devices are constructed for functioning as a silicon controlled rectifier, and a second area, in which at least one device is constructed for functioning ... 12/07/06 - 20060273399 - Esd protection structure and method utilizing substrate triggering for a high-voltage tolerant pad In an ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad on a substrate, an ESD protection device has a source connected to the pad and a gate and a drain both connected to a ground, and a substrate-triggering control circuit is used to keep the ... 12/07/06 - 20060273398 - Semiconductor device and manufacturing method of semiconductor device To present a semiconductor device mounting ESD protective device appropriately applicable to transistors mutually different in dielectric strength, and its manufacturing method. The semiconductor device comprises a first ESD protective circuit 1A including a first transistor 3 and a first ballast resistance 4, and a second ESD protective circuit 1B ... 12/07/06 - 20060273397 - Protect diodes for hybrid-orientation substrate structures A semiconductor structure and method for forming the same. The structure includes a hybrid orientation block having first and second silicon regions having different lattice orientations. The first silicon region is directly on the block, while the second silicon region is physically isolated from the block by a dielectric region. ... 11/30/06 - 20060267102 - Npn darlington esd protection circuit An electrostatic discharge protection circuit includes a metal-oxide semiconductor transistor having a first terminal connected to an input end, and a gate connected to a supply voltage; a first bipolar junction transistor having a first terminal connected to the input end, and a base connected to a second terminal of ... 11/30/06 - 20060267101 - Electrostatic discharge protection networks for triple well semiconductor devices An electrostatic discharge protection network that uses triple well semiconductor devices either singularly or in a series configuration. The semiconductor devices are preferably in diode junction type configuration. ... 11/23/06 - 20060261413 - Semiconductor device and photoelectric conversion device and scanner using the same A semiconductor device includes a photoelectric conversion element outputting an electric signal in accordance with an externally input optical signal, an internal circuit processing the electric signal, a signal terminal inputting or outputting a signal to the internal circuit, a first voltage terminal supplying a first voltage to the internal ... 11/23/06 - 20060261412 - Process and electrostatic discharge protection device for the protection of a semiconductor circuit An ESD protection device diverts an overvoltage present on a semiconductor circuit by a heat conducting arrangement arranged in the ESD protection device. The heat conducting arrangement includes contact holes filled with metal and arranged in the vicinity of a hotspot of the ESD protection device to divert heat from ... 11/09/06 - 20060249792 - Electrostatic discharge protection circuit and integrated circuit having the same An electrostatic discharge (ESD) protection circuit has a low trigger voltage. The ESD protection circuit is coupled between two rails. The ESD protection circuit includes a connection load and a second transistor. The connection load turns on a first transistor when an ESD event occurs, and the second transistor generates ... 11/09/06 - 20060249791 - One time programmable memory cell This invention discloses a one-time programmable (OTP) memory cell. The OTP memory cell includes a dielectric layer disposed between two conductive polysilicon segments wherein the dielectric layer is ready to change from a non-conductive state to a conductive state through an induced voltage breakdown. In a preferred embodiment, one of ... 11/02/06 - 20060244071 - Semiconductor device including metal-oxide-silicon field-effect transistor as a trigger circuit A semiconductor device includes a silicon-controlled rectifier to protect an internal circuit from electrostatic discharge damage and a first metal-oxide-silicon field-effect transistor to apply a trigger voltage to the silicon-controlled rectifier. The first metal-oxide-silicon field-effect transistor including a gate electrode and a substrate which are electrically connected to each other. ... 11/02/06 - 20060244070 - Semiconductor storage device and portable electronic equipment A semiconductor storage device has memory function bodies (261, 262) having a function to retain electric charges, which are formed on opposite sides of a single gate electrode (217) provided on a semiconductor layer (211) with a gate insulation film (214) disposed therebetween. Each memory function body includes a charge ... 10/26/06 - 20060237794 - Method for providing a programmable electrostatic discharge (esd) protection device A method for providing a programmable electrostatic discharge (ESD) protection device is provided. The method includes providing a source diffusion in a substrate, providing a deeper body diffusion in the substrate, providing a gate at a space between the source diffusion and the body diffusion, and providing a variable structure ... 10/26/06 - 20060237793 - Igbt with injection regions between mosfet cells A cellular MOSgated device of planar or trench topology has base injection regions formed between pairs of cells to inject minority carriers to modulate the resistivity of the drift region. ... 10/26/06 - 20060237792 - Electrostatic discharge protection device An electrostatic discharge (ESD) protection device includes a first-type substrate, a second-type well formed in the substrate and a first-type well formed in the substrate. The second-type well includes a second-type+ region formed between first and second first-type+ regions. The first-type well is formed in the substrate adjacent a first ... 10/19/06 - 20060231896 - Esd protection device with thick poly film and method for forming the same An ESD protection device with thicker polysilicon film, an electronic apparatus having the same, and a method for manufacturing the same are provided. The ESD protection device can be a diode or a MOS transistor with a thicker polysilicon film employed in an ESD protection circuit to protect an electronic ... 10/19/06 - 20060231895 - Guardwall structures for esd protection A semiconductor circuit for protecting an I/O pad against ESD events comprising a pMOS transistor (510) in a first n-well (511) having its source connected to Vdd and the first n-well, and its drain connected to the I/O pad; the transistor has a finger-shaped contact (513) to the first n-well, ... 10/05/06 - 20060220135 - Electrostatic discharge input protection circuit An ESD protection circuit includes: a first metal oxide semiconductor (MOS) transistor discharging an excessive electrostatic current generated between an input pad and an internal circuit, and having a first terminal connected to a ground voltage supply terminal; and a second MOS transistor discharging an electrostatic current generated between the ... 09/28/06 - 20060214234 - Semiconductor integrated circuit A semiconductor integrated circuit has complementary field-effect transistors, one formed in a semiconductor substrate, the other formed in a well in the substrate, and has four power-supply potentials: two supplied to the sources of the field-effect transistors, one supplied to the substrate, and one supplied to the well. An unwanted ... 09/14/06 - 20060202273 - Method of manufacturing semiconductor device A method of manufacturing a semiconductor device comprises the steps of: preparing a semiconductor substrate, the semiconductor substrate having first and second predetermined regions; forming a first field region surrounding the first predetermined region; forming a second field region surrounding the second predetermined region while a separating region exists between ... 09/14/06 - 20060202272 - Wide bandgap transistors with gate-source field plates A transistor comprising an active region having a channel layer, with source and drain electrodes formed in contact with the active region and a gate formed between the source and drain electrodes and in contact with the active region. A spacer layer is on at least part of the surface ... 08/17/06 - 20060180865 - Semiconductor device An electrostatic discharge protected transistor of the present invention includes transistors in an active region composed of a p-type semiconductor substrate and surrounded by element isolation regions. On the active region composed of the p-type semiconductor substrate, an on-source silicide film and an on-drain silicide film are provided. The on-drain ... 08/17/06 - 20060180864 - Semiconductor device Signal lines which provide electric connections from an internal circuit formed on a main surface of a semiconductor chip and including, for example, MIS transistor to protective elements constituted by, for example, diodes are drawn out from outlet ports formed on wiring lines disposed between the protective elements, and a ... 08/17/06 - 20060180863 - Novel implantation method to improve esd robustness of thick gate-oxide grounded-gate nmosfet's in deep-submicron cmos technologies An implantation method to improve ESD robustness of thick-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies. Based on standard process flow in DGO, a thick gate-oxide ESD device is improved. Instead of using the standard I/O device, the ESD device uses the thin-oxide N-LDD implantation, and thus its ESD robustness is ... 08/10/06 - 20060175663 - Electrostatic discharge circuit and method of dissipating an electrostatic current An electrostatic discharge circuit between a first pad and a second pad including an electrostatic discharge circuit element, including a bipolar transistor path and a resistor path, the electrostatic discharge circuit element alternately discharging an electrostatic current through the bipolar transistor path and the resistor path. ... 08/10/06 - 20060175662 - Reverse blocking semiconductor component with charge compensation The invention relates to a field effect controllable semiconductor component, comprising a semiconductor body with a first terminal zone and a second terminal zone, a channel zone formed between the two terminal zones, a control electrode, and also a plurality of compensation zones. The semiconductor component furthermore has additional doping ... 08/03/06 - 20060170054 - Device having a low-voltage trigger element An electronic device having an LV-well element trigger structure that reduces the effective snapback trigger voltage in MOS drivers or ESD protection devices. A reduced triggering voltage facilitates multi-finger turn-on and thus uniform current flow and/or helps to avoid competitive triggering issues. ... 07/27/06 - 20060163658 - Monolithic mosfet and schottky diode for mobile phone boost converter A cell phone has a plurality of interconnected electronic components for performing the electrical functions of the phone. A DC/DC converter provides an operating voltage which is applied to power supply terminals of the plurality of interconnected electronic components. The DC/DC converter uses a monolithic semiconductor device containing a power ... 07/27/06 - 20060163657 - Method to reduce leakage in a protection diode structure A protection diode is used in a CMOS integrated circuit device to direct charged particles to benign locations and prevent damage to the device. The protection diode includes a well region of a first conductivity type formed in a surface of a semiconductor substrate, a heavily doped P-type impurity region ... 07/20/06 - 20060157790 - Electrostatic discharge device integrated with pad A structure of an electrostatic discharge (ESD) device integrated with a pad is provided. The ESD device is integrated with the pad and formed under the pad. By using the area under the pad, the ESD device does not occupy additional space of an integrated circuit. Furthermore, since the pad ... 07/06/06 - 20060145261 - Electrostatic discharge protection An electrostatic discharge (“ESD”) protection device, which includes a thyristor circuit, in the ESD case increases a resistance of the ESD protection device in comparison with a non-ESD case, by means of a switch. An ESD protection arrangement may include a ESD protection device to protects circuits with multiple voltage ... 07/06/06 - 20060145260 - Electro-static discharge protection circuit and method for fabricating the same An ESD protection circuit using an N-type extended drain silicon controlled rectifier (N-EDSCR) and a method for fabricating the same are provided. An electro-static discharge (ESD) protection circuit includes a substrate, a well formed in the substrate, a drift region having a predetermined portion overlapped with the well, a plurality ... 06/29/06 - 20060138546 - Voltage regulator A voltage regulator having a MOS transistor driver is disclosed. The voltage regulator comprises a p-channel MOS transistor at a voltage input terminal Vin and a p-channel MOS transistor at a voltage output terminal Vout. A drain of the input side p-channel MOS transistor is connected to the voltage input ... 06/29/06 - 20060138545 - Protective circuit for protecting chip from misoperation A protective circuit for a chip includes an input terminal for receiving a power supply voltage, an output terminal for outputting a working voltage to the chip, a first BJT and a second BJT. A base of the first BJT is connected to the input terminal and an emitter of ... 06/29/06 - 20060138544 - Esd protection structure for i/o pad subject to both positive and negative voltages An ESD protection circuit is disclosed for an n-channel MOS transistor formed in an inner p-well of a triple-well process and connected to an I/O pad that may experience both positive and negative voltages according to the present invention. A first switch connects the p-well containing the n-channel MOS transistor ... 06/22/06 - 20060131654 - Diode with reduced forward-bias resistance and shunt capacitance A diode having reduced forward-bias resistance and shunt capacitance. The diode includes a lightly doped region of a semiconductor substrate, a carrier injection region and an ohmic contact region. The carrier injection region is disposed within the lightly doped region and has a plurality of sides of substantially uniform length. ... 06/15/06 - 20060125016 - Electrostatic discharge protection circuit using triple welled silicon controlled rectifier Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate has a triple well structure such that a bias is applied to a p-well corresponding to a substrate of a ggNMOS device. Thus, a ... 06/15/06 - 20060125015 - Esd protection for high voltage applications An ESD device includes a low doped well connected to a first contact and a diffusion area connected to a second contact. A substrate between the low doped well and the diffusion area has a dopant polarity that is opposite a dopant polarity of the low doped well and the ... 06/15/06 - 20060125014 - Diode with low junction capacitance A diode is comprised of a doped region formed with a first dopant of a first conductivity type. In addition, the diode further comprises a substrate doped with a second dopant of a second conductivity type opposite of the first conductivity type. The lightly doped substrate, instead of a well, ... 05/25/06 - 20060108637 - Esd protection apparatus for an electrical device An ESD protection apparatus for an electrical device with a circuit structure having an internal terminal, which is connected to an external terminal of the electrical device via a conductive connection, has a gas-filled cavity, through which the conductive connection extends at least partly, and a reference electrode in the ... 05/11/06 - 20060097323 - Method and apparatus for preventing microcircuit thermo-mechanical damage during an esd event A method and apparatus for preventing thermo-mechanical damage to an electrostatic discharge (ESD) protection device is disclosed. The method and apparatus of the invention use materials with superior thermo-mechanical properties, in particular, the Coefficient of Thermal Expansion (CTE), melting temperature, tensile strength and fracture toughness. The thermo-mechanical energy absorber materials ... 05/11/06 - 20060097322 - Electrostatic discharge (esd) protection circuit An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes: a first conductivity type substrate; a second conductivity type well region formed in a predetermined portion of the substrate; a gate structure including a gate insulation layer and a gate electrode stacked on a selected surface portion ... 05/11/06 - 20060097321 - Electrostatic discharge protection device An electrostatic discharge (ESD) protection device is provided. The apparatus includes: a double diffused drain N-type metal oxide semiconductor field effect transistor (MOSFET); a P-type silicon controlled rectifier (SCR); a double diffused drain P-type MOSFET; and an N-type SCR, wherein: the double diffused drain N-type MOSFET is connected in parallel ... 05/11/06 - 20060097320 - Protecting element and semiconductor device using the same Between a terminal of an element to be protected and a GND terminal, a protecting element is connected, which includes a first n+ region, an insulating region and a second n+ region. The first n+ region is provided to have a columnar shape in a depth direction of a substrate, ... 05/04/06 - 20060091464 - Electrostatic protection circuit An electrostatic protection circuit includes a thyristor that discharges an excess charge generated between a first power supply terminal and a second power supply terminal having a lower voltage than the first power supply terminal, a trigger device that supplies a current turning on the thyristor, and an electrostatic discharge ... 04/27/06 - 20060086984 - Method of assessing potential for charging damage in integrated circuit designs and structures for preventing charging damage Disclosed is a method and circuit for preventing charging damage in an integrated circuit design, for example, a design having silicon over insulator (SOI) transistors. The method/circuit prevents damage from charging during processing to the gate of IC devices by assigning regions to the IC design such that the devices ... 04/27/06 - 20060086983 - Electrostatic protective element of semiconductor integrated circuit An electrostatic protective element of the present invention comprises: a second-conductive-type and lightly-doped first diffusion layer to be a collector, which is formed to be in contact with a first conductive type semiconductor substrate; a first-conductive-type second diffusion layer to be a base, which is formed on the first diffusion ... 04/20/06 - 20060081933 - Electrostatic discharge protection device with complementary dual drain implant Off-chip driver (OCD) NMOS transistors with ESD protection are formed by interposing an P-ESD implant between the N+ drain regions of OCD NMOS transistors and the N-well such that the P-ESD surrounds a section of the N-well. The P-ESD implant is dosed less than the N+ source/drain implants but higher ... 04/13/06 - 20060076626 - Semiconductor integrated circuit device, contactless electronic device, and handheld terminal In a semiconductor integrated circuit device in which a rectifier device constituting a rectifier comprises a MOS transistor whose gate is connected to one antenna terminal and whose source is connected to the other antenna terminal, the parasitic capacitance applied between the antenna terminals increased. The present invention provides a ... 04/06/06 - 20060071276 - Field effect trench transistor One embodiment of the invention relates to a field effect trench transistor with a multiplicity of transistor cells that are arranged like an array and whose gate electrodes are arranged in active trenches formed in a semiconductor body. Inactive trenches are arranged in the array of the transistor cells, there ... 03/30/06 - 20060065933 - Esd protection circuit with floating diffusion regions This invention discloses an electrostatic discharge (ESD) protection circuit that comprises a substrate of a predetermined type, at least one MOS transistor being coupled to a pad of an integrated circuit for dissipating an ESD current from the pad during an ESD event, a substrate contact region, and at least ... 03/30/06 - 20060065932 - Circuit to improve esd performance made by fully silicided process An electrostatic discharge (ESD) protection circuit is provided. The circuit is coupled between a first and a second node for dissipating an ESD current. The circuit comprises a first transistor formed on a substrate with its gate and a first diffusion region coupled to the first node for receiving the ... 03/30/06 - 20060065931 - Esd protection for high voltage applications An electrostatic discharge (ESD) protection device includes a diode located in a substrate and an N-type metal oxide semiconductor (NMOS) device located in the substrate adjacent the diode, wherein both the diode and the NMOS are coupled to an input device, and at least a portion of the diode and ... 03/09/06 - 20060049462 - High voltage transistor and method for fabricating the same A high voltage transistor operating through a high voltage and a method for fabricating the same are provided. The high voltage transistor includes: an insulation layer on a substrate; an N+-type drain junction region on the insulation layer; an N−-type drain junction region on the N+-type drain junction region; a ... 03/02/06 - 20060043491 - Electrostatic discharge protection device and method for its manufacture Provided are an electrostatic discharge (ESD) protection device and a method for making such a device. In one example, the ESD protection device includes a Zener diode region formed in a substrate and an N-type metal oxide semiconductor (NMOS) device formed adjacent to the Zener diode region. The Zener diode ... 03/02/06 - 20060043490 - Electrostatic discharge (esd) detection and protection A system and method are provided for protecting a transistor from electrostatic discharge (ESD) current associated with an ESD event. In one embodiment, a system comprises a detection circuit operative to detect an ESD event and a switch that is operative to hold the transistor in a deactivated state in ... 03/02/06 - 20060043489 - Diode and applications thereof A diode with low substrate current leakage and suitable for BiCMOS process technology. A buried layer is formed on a semiconductor substrate. A connection region and well contact the buried layer. Isolation regions are adjacent to two sides of the buried layer, each deeper than the buried layer. The isolation ... 03/02/06 - 20060043488 - Method and system for a programmable electrostatic discharge (esd) protection circuit An electrostatic discharge (ESD) protection device is disclosed. The ESD protection device comprises a source diffusion in a substrate and a deeper body diffusion in the substrate. The ESD protection device further includes a gate function provided at a space between the source diffusion and the body diffusion surface terminations; ... 03/02/06 - 20060043487 - Bi-directional esd protection circuit An electrostatic discharge (ESD) device for protecting an input/output terminal of a circuit, the device comprising a first transistor with an integrated silicon-controlled rectifier (SCR) coupled between the input/output (I/O) terminal of the circuit and a node and a second transistor with an integrated silicon-controlled rectifier coupled between the node ... 02/16/06 - 20060033163 - I/o and power esd protection circuits by enhancing substrate-bias in deep-submicron cmos process A technique to enhancing substrate bias of grounded-gate NMOS fingers (ggNMOSFET's) has been developed. By using this technique, lower triggering voltage of NMOS fingers can be achieved without degrading ESD protection in negative zapping. By introducing a simple gate-coupled effect and a PMOSFET triggering source with this technique, low-voltage triggered ... 02/16/06 - 20060033162 - [metal oxide semiconductor device for electrostatic discharge protection circuit] A MOS device for an electrostatic discharge protection circuit provided. A gate structure is disposed on the substrate. A source region and a drain region are formed in the substrate beside the gate structure. A doped layer is disposed underneath the source region and the drain region within the substrate ... 02/09/06 - 20060027873 - Method of manufacturing an esd protection device with the same mask for both ldd and esd implantation A method of manufacturing a semiconductor device having a first and second transistor of an ESD protection and internal circuit respectively. The method includes the steps of providing a substrate, forming gates of the first and second transistor on the substrate, depositing a mask layer and patterning the mask layer ... 02/09/06 - 20060027872 - Electrostatic discharge protection device An electrostatic discharge (ESD) protection device including an ESD clamp circuit is provided. The ESD clamp circuit includes at least a diode connected in series between a first voltage and a pad, and at least an ESD component connected in series between a second voltage and a pad. Each of ... 02/09/06 - 20060027871 - [electrostatic discharge protection device] An electrostatic discharge (ESD) protection device including an ESD protection circuit is provided. The ESD protection circuit includes at least a diode connected in series between a first voltage and a pad, and at least an ESD component connected in series between a second voltage and a pad. Each of ... 02/02/06 - 20060022273 - System and method for assembly of semiconductor dies to flexible circuits A system and method for assembly of semiconductor dies to flexible circuits, wherein the present invention utilizes UV release tape as a temporary, removable carrier for precisely aligning, and maintaining the alignment of, a semiconductor die, and more specifically, the interconnecting pads thereof, with the conducting leads of a flexible ... 02/02/06 - 20060022272 - Electrostatic discharge protection device and circuit thereof An electrostatic discharge (ESD) protection circuit including a detection circuit for detecting the ESD current and a clamp circuit for bypassing an ESD current between a first pad and a second pad is provided. The detection circuit is connected between the first pad and the second pad, wherein the detection ... 01/05/06 - 20060001101 - Semiconductor device A semiconductor device has a supply pad to which a supply voltage is fed, a supply conductor that is electrically connected to the supply pad, an input/output pad via which a signal is fed in from outside or fed out to outside, an electrostatic protection device that is electrically connected ... 01/05/06 - 20060001100 - Method for simulating electrostatic discharge protective circuit A method for simulating an electrostatic discharge protective circuit replaces an electrostatic discharge protective element having an insulated-gate field-effect transistor having a source and a drain with an equivalent circuit including the insulated-gate field-effect transistor, a bipolar transistor, a current source, a diode, and a substrate resistance. Then, the method ... 01/05/06 - 20060001099 - Reverse-connect protection circuit with a low voltage drop Current supply circuit for supplying a circuit with an internal supply voltage on the basis of an external supply voltage with an bipolar transistor for realizing reverse-connect protection for the circuit to be supplied, a supply current flowing through the bipolar transistor's collector-emitter path, a regulating circuit connected to the ... 01/05/06 - 20060001098 - Electrostatic discharge protection device An electrostatic discharge (ESD) protection device for protecting an internal circuit includes a first ESD current unit and a second ESD current unit. The first ESD current unit is electrically connected between the internal circuit and a high source voltage for transmitting a discharging current to the high source voltage. ... 01/05/06 - 20060001097 - Semiconductor device and manufacturing method of the same A protection transistor which protects an internal transistor in an internal circuit from breakage due to static electricity occurring between power supply pads is provided. A conductivity type of a first p-well constructing a channel of the protection transistor corresponds to a conductivity type of a second p-well constructing a ... 12/22/05 - 20050280093 - Modulated trigger device An integrated circuit structure, a trigger device and a method of electrostatic discharge protection, the integrated circuit structure including: a substrate having a top surface defining a horizontal direction, the substrate of a first dopant type; a first horizontal layer in the substrate, the first layer of a second dopant ... 12/22/05 - 20050280092 - Electrostatic discharge (esd) protection mos device and esd circuitry thereof An NMOS device having protection against electrostatic discharge. The NMOS device includes a P-substrate, a P-epitaxial layer overlying the P-substrate, a P-well in the P-epitaxial layer, an N-well in the P-epitaxial layer and encompassing the P-well, an N-Buried Layer (NBL) underneath the P-well and bordering the N-well. The P-well is ... 12/22/05 - 20050280091 - Semiconductor structure and method for esd protection A semiconductor integrated circuit structure includes a plurality of diodes disposed in the substrate. These diodes are electrically coupled in series. At least one insertion region is disposed in the substrate between two of the diodes and a supply voltage node electrically coupled to the insertion region. Preferably, a guard ... 12/15/05 - 20050275032 - Mos type semiconductor device having electrostatic discharge protection arrangement In a semiconductor device, a well region is formed in a semiconductor substrate, a transistor-formation region is defined in the well region. An electrostatic discharge protection device is produced in the transistor-formation region, and features a multi-finger structure including a plurality of fingers. A guard-ring is formed in the well ... 12/15/05 - 20050275031 - Protection of an integrated circuit against electrostatic discharges A circuit of protection against electrostatic discharges, comprising a first MOS transistor for detecting a leakage current between a first input node of a circuit to be protected and a second node at an output voltage, a second MOS transistor constitutive of a switch directly connecting said nodes, and a ... 12/15/05 - 20050275030 - Semiconductor device and method of manufacturing the same The present invention provides a method of manufacturing an ESD protection device with a gate electrode structure that reduces surge voltage applied to a gate insulating film and inhibits destruction of the gate insulating film. A method of manufacturing a semiconductor device includes steps of preparing a support substrate, forming ... 12/15/05 - 20050275029 - Fast turn-on and low-capacitance scr esd protection An ESD protection device comprises a PNP and an NPN transistor having a common PN junction, first and second collector resistances, series connected at a first node, connected to a collector of the PNP transistor, third and fourth collector resistances, series connected at a second node, connected to a collector ... 12/15/05 - 20050275028 - Reduced finger end mosfet breakdown voltage (bv) for electrostatic discharge (esd) protection The present invention relates to electro static discharge (ESD) protection circuitry. Multiple techniques are presented to adjust one or more ends of one or more fingers of an ESD protection device so that the ends of the fingers have a reduced initial trigger or breakdown voltage as compared to other ... 12/15/05 - 20050275027 - Esd protection for integrated circuits Electrostatic discharge protection for integrated circuits, particularly for enhancing electrostatic discharge protection performance for Input-output cells and power supply clamps used in CMOS and BiCMOS IC technologies is described. A P-type, implantation region, or layer, referred to as “P-deep,” in both N-MOSFET and P-MOSFET devices is provided to enhance electrostatic ... 12/08/05 - 20050269642 - Semiconductor device A semiconductor device comprises a semiconductor substrate; an embedded insulating layer provided on the semiconductor substrate; a semiconductor layer provided on the embedded insulating layer; a transistor including a first conductivity type source layer formed within the semiconductor layer, a first conductivity type drain layer formed in the semiconductor layer, ... 12/08/05 - 20050269641 - Electrostatic protection circuit An electrostatic discharge (ESD) protection circuit coupled to an input pad comprises a diode formed in a substrate and coupled to the input pad; a P deep well formed in the substrate; an N well formed in the P deep well; a first P+ doped region in the N well; ... 11/10/05 - 20050247980 - High voltage esd-protection structure A high voltage ESD-protection structure is used to protect delicate transistor circuits connected to an input or output of an integrated circuit bond pad from destructive high voltage ESD events by conducting at a controlled breakdown voltage that is less than a voltage that may cause destructive breakdown of the ... 11/10/05 - 20050247979 - Esd protection structure with sige bjt devices The present invention provides an ESD protection device or structure that exploits the high conductivity of a heavily doped heterojunction base of a standard SiGe bipolar junction transistor (BJT) cell. This improved ESD protection scheme further uses the combination of trench isolation and buried subcollector layer of the SiGe BJT ... 11/03/05 - 20050242400 - Electrostatic discharge protection circuit An electrostatic discharge protection circuit has a substrate; a first P-well installed on the substrate and having a first P+-doped region and a first N+-doped region, both of which are connected to ground; a second P-well installed on the substrate and having a second P+-doped region and a second N+-doped ... 11/03/05 - 20050242399 - Mosfet with electrostatic discharge protection structure and method of fabrication A semiconductor circuit comprises a semiconductor substrate, a semiconductor device having a drain region disposed in the substrate, and a reverse doped region laterally adjacent and laterally contacting the drain region wherein the reverse doped region has an opposite doping type from that of the drain region and a dopant ... 10/27/05 - 20050236673 - System and method for esd protection An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programable attenuation and a programable gain low noise amplifier. Frequency conversion circuitry advantageously uses LC filters integrated onto the substrate in conjunction with image reject mixers ... 10/27/05 - 20050236672 - Mos type semiconductor device having electrostatic discharge protection arrangement In a semiconductor device having an electrostatic discharge protection arrangement, a semiconductor substrate exhibits a first conductivity type. First and second impurity regions each exhibiting a second conductivity type are formed in the semiconductor substrate. A channel region is formed in the semiconductor substrate between the first and second impurity ... 10/20/05 - 20050230757 - Electro-optical device and electronic apparatus An electro-optical device includes a plurality of pixels that are arranged above a surface of a substrate, corresponding to intersections of a plurality of scanning lines and a plurality of data lines, a sampling circuit that samples image signals and supplies the sampled image signals from the data lines to ... 10/13/05 - 20050224883 - Circuit design for increasing charge device model immunity A charge device model (CDM) immunity module used in a semiconductor circuit for CDM damage protection. The CDM immunity module comprises a CDM ground pad and a current directing device such as a diode coupled between the CDM ground pad and a substrate of at least one device in a ... 10/13/05 - 20050224882 - Low trigger voltage esd nmosfet triple-well cmos devices An ESD NMOSFET, and a method for lowering a ESD NMOSFET trigger voltage. An ESD NMOSFET is configured in triple well CMOS architecture where the first well is separated from second and third wells by respective shallow well isolation regions. The first well is also separated from the substrate along ... 10/06/05 - 20050218454 - Semiconductor device and method for manufacturing same A semiconductor device is provided having a high performance resistance element. In an N-type well isolated by an insulating film, two higher concentration N-type regions are formed. An interlayer insulating film is also formed. In a plurality of openings in the interlayer insulating film, one electrode group having a plurality ... 09/29/05 - 20050212051 - Low voltage silicon controlled rectifier (scr) for electrostatic discharge (esd) protection of silicon-on-insulator technologies A silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device that can protect very sensitive thin gate oxides by limiting the power dissipation during the ESD event, which is best achieved by reducing the voltage drop across the active (protection) device during an ESD event. In one embodiment, the invention provides very ... 09/29/05 - 20050212050 - Device for electrostatic discharge protection and method of manufacturing the same The present invention relates to a device for electrostatic discharge protection (ESD). According to an embodiment of the present invention, a device for electrostatic discharge protection comprises a semiconductor substrate, a plurality of field oxide films formed in predetermined regions on the semiconductor substrate, a gate formed in a predetermined ... 09/29/05 - 20050212049 - Semiconductor device and process for producing the same A semiconductor device able to improve surge discharge capacity of a protection element (diodes in different direction each other) without changing parameter of a transistor and increasing cost drastically, having a transistor and a protection element at separated regions of semiconductor layers formed on a semiconductor substrate, which the semiconductor ... 09/22/05 - 20050205937 - Esd protection device with high voltage and negative voltage tolerance An electrostatic discharge protection device with high voltage and negative voltage tolerance is provided. The electrostatic discharge protection device comprises: a first type substrate; a first type well inside the first type substrate, the first type well being floating; a second type well inside the first type substrate, the second ... 09/08/05 - 20050194643 - Testable electrostatic discharge protection circuits A semiconductor die has a bonding pad for a MOSFET such as a power MOSFET and a separate bonding pad for ESD protection circuitry. Connecting the bonding pads together makes the ESD protection circuitry functional to protect the MOSFET. Before connecting the bonding pads together, the ESD protection circuitry and/or ... 07/21/05 - 20050156249 - Bipolar transistor and semiconductor device using same A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed with such a bipolar transistor and a MOS transistor on a same substrate. A high concentration region for reducing the ... 07/14/05 - 20050151200 - Electrostatic discharge protection circuit with a diode string An electrostatic discharge (ESD) protection circuit is disclosed for preventing a pad-to-pad ESD charge. The protection circuit for each pad of an integrated circuit comprises a current dissipation module with an N-type MOSFET connected in parallel with a bipolar junction transistor (BJT) wherein the drain of the MOSFET and the ... 07/07/05 - 20050145946 - Over-voltage protection device in a portable equipment Disclosed is an over-voltage protection device in a portable equipment. The device comprises an over-voltage detection signal generating unit for detecting over-voltage from power being applied from an external equipment and outputting an over-voltage detection signal; an over-voltage interruption unit controlled by the over-voltage detection signal of the over-voltage signal ... 07/07/05 - 20050145945 - High energy esd structure and method In one embodiment, a concentric ring ESD structure includes a first p-type region and a second p-type region are formed in a layer of semiconductor material. The two p-type regions are coupled together with a floating n-type buried layer. The first and second p-type regions form a back-to-back diode structure ... 06/23/05 - 20050133871 - Electrostatic discharge protection device An ESD protection device. The ESD protection device has a substrate; a channel region, a source region, and a drain region. The channel region is formed on a predetermined area of a surface of the substrate, the channel region has a first side and a second side. The source region ... 06/23/05 - 20050133870 - Triggererd back-to-back diodes for esd protection in triple-well cmos process An embodiment is a Electro Static Discharge (ESD) protection device comprising: a n-doped region and a p-doped region in a p-well in a semiconductor structure. The n-doped region and the p-doped region are spaced. A n-well and a deep n-well surrounding the p-well on the sides and bottom. A first ... 06/23/05 - 20050133869 - [double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof] A double-triggered silicon controller rectifier (SCR) comprises a plurality of N+ diffusion areas, a plurality of P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench ... 06/23/05 - 20050133868 - [electro-static discharge protection circuit for dual-polarity input/output pad] An electro-static discharge (ESD) protection circuit for a dual polarity I/O pad is provided. The protection circuit includes a substrate of first type; a deep well region of second type disposed in the first type substrate; a well region of first type disposed in the second type deep well region; ... 06/16/05 - 20050127445 - Electrostatic discharge protection device and method of manufacturing the same An electrostatic discharge protection device that includes a semiconductor substrate of a first dopant type, at least one source/drain pair of a second dopant type formed in the substrate, wherein the source/drain pair is separated to define a channel region therebetween, a lightly-doped region of the first dopant type defined ... 06/16/05 - 20050127444 - Semiconductor integrated circuit A semiconductor integrated circuit includes an internal circuit having first and second external terminals, first and second fuse elements, each having first and second terminals, the first terminals of the first and second fuse elements being respectively connected to the first and second external terminals, and a discharge line connected ... ### FreshPatents.com Support |