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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Single Crystal Semiconductor Layer On Insulating Substrate (soi) > Substrate Is Single Crystal Insulator (e.g., Sapphire Or Spinel) Substrate Is Single Crystal Insulator (e.g., Sapphire Or Spinel)Substrate Is Single Crystal Insulator (e.g., Sapphire Or Spinel) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070085139 - Semiconductor device A semiconductor device capable of preventing the occurrence of stress in a field region, and to prevent dislocation, caused by the stress, in the active region is provided. The semiconductor device includes a support substrate; an active island region having single crystal silicon being formed on the support substrate; a ... 02/22/07 - 20070040219 - Iii-v group nitride system semiconductor self-standing substrate, method of making the same and iii-v group nitride system semiconductor wafer A III-V group nitride system semiconductor self-standing substrate is made of III-V group nitride system semiconductor single crystal with a hexagonal crystal system crystalline structure. The substrate is provided with a surface that is off-oriented 0.09 degrees or more and 24 degrees or less in the a-axis or m-axis direction ... 06/29/06 - 20060138543 - Silicon-on-sapphire semiconductor device with shallow lightly-doped drain A semiconductor device is created in a doped silicon layer at most one-tenth of a micrometer thick formed on and having an interface with a sapphire substrate. An oppositely doped source region is formed in the silicon layer. A gate electrode is formed above part of the silicon layer. A ... 01/19/06 - 20060011984 - Control of strain in device layers by selective relaxation The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. Strain in the strained semiconductors is controlled for improved device performance. ... 10/06/05 - 20050218453 - Strained-semiconductor-on-insulator device structures with elevated source/drain regions The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. ... ### FreshPatents.com Support |