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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Short Channel Insulated Gate Field Effect Transistor > Active Channel Region Has A Graded Dopant Concentration Decreasing With Distance From Source Region (e.g., Double Diffused Device, Dmos Transistor) > Plural Sections Connected In Parallel (e.g., Power Mosfet) > With Means To Reduce On Resistance With Means To Reduce On ResistanceWith Means To Reduce On Resistance patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/01/07 - 20070023831 - Field effect transistor and application device thereof The present invention provides a MOSFET having a low on-state resistance and a high withstand voltage as well as a small output capacitance (C(gd), etc.). The MOSFET has a p-type base layer 4 and a n-type source layer 5 selectively formed on the surface of the p-type base layer 4. ... 11/30/06 - 20060267092 - High power semiconductor device capable of preventing parasitical bipolar transistor from turning on A high power semiconductor device capable of preventing parasitical bipolar transistor from turning on comprises a first conduction type drain region, a first conduction type epitaxial region formed on the first conduction type drain region, a plurality of second conduction type body regions formed on the surface of the epitaxial ... 06/15/06 - 20060125005 - Electrode contact section of semiconductor device A p-type impurity layer is formed in an n-type semiconductor substrate. Since the p-type impurity layer has a low impurity concentration and a sufficiently shallow depth of 1.0 μm or less, the carrier injection coefficient can be reduced. In the p-type impurity layer, a p-type contact layer of a high ... 04/27/06 - 20060086974 - Integrated circuit with multi-length power transistor segments A monolithic power integrated circuit fabricated on a semiconductor die includes a control circuit and a first output high voltage field-effect transistor (HVFET) having source and drain segments substantially equal to a first length. A second output HVFET has source and drain segments substantially equal to a second length. At ... 04/06/06 - 20060071272 - Programmable non-volatile resistance switching device A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical resistance that is reversibly switchable between different states, wherein the first number is larger than two and the second number is ... 12/15/05 - 20050275016 - Deep trench super switch device A deep trench super switch device has a plurality of trenches, each of the trenches containing a gate electrode polysilicon layer on top of a plurality of stacked conductive floating polysilicon layers, the remainder of each of the trenches being filled with a nonconductive material. ... ### FreshPatents.com Support |