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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Short Channel Insulated Gate Field Effect Transistor > Active Channel Region Has A Graded Dopant Concentration Decreasing With Distance From Source Region (e.g., Double Diffused Device, Dmos Transistor) > In Integrated Circuit Structure

In Integrated Circuit Structure

In Integrated Circuit Structure patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

07/17/14 - 20140197486 - Power integrated circuit including series-connected source substrate and drain substrate power mosfets
A semiconductor device containing a high voltage MOS transistor with a drain drift region over a lower drain layer and channel regions laterally disposed at the top surface of the substrate. RESURF trenches cut through the drain drift region and body region parallel to channel current flow. The RESURF trenches...

07/17/14 - 20140197487 - Ldmos power semiconductor device and manufacturing method of the same
An electronic semiconductor device comprising: a semiconductor body, having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side; a body region extending...

07/17/14 - 20140197488 - Method of forming high voltage device
A method of forming a device includes forming a buried well region of a first dopant type in a substrate. A well region of the first dopant type is formed over the buried well region. A first well region of a second dopant type is formed between the well region...

07/03/14 - 20140183629 - Semiconductor device and method of manufacturing a semiconductor device
A semiconductor device includes a transistor, formed in a semiconductor substrate having a first main surface. The transistor includes a channel region, doped with dopants of a first conductivity type, a source region, a drain region, the source and the drain region being doped with dopants of a second conductivity...

07/03/14 - 20140183630 - Decmos formed with a through gate implant
An integrated circuit containing a MOS transistor and a DEMOS transistor of a same polarity may be formed by implanting dopants of a same conductivity type as source/drain regions of the MOS transistor and the DEMOS transistor through a gate of the MOS transistor and through a gate of the...

06/26/14 - 20140175543 - Conversion of thin transistor elements from silicon to silicon germanium
Embodiments of the present disclosure provide techniques and configurations associated with conversion of thin transistor elements from silicon (Si) to silicon germanium (SiGe). In one embodiment, a method includes providing a semiconductor substrate having a channel body of a transistor device disposed on the semiconductor substrate, the channel body comprising...

06/26/14 - 20140175544 - Double diffused drain metal-oxide-semiconductor devices with floating poly thereon and methods of manufacturing the same
A metal-oxide-semiconductor (MOS) device is disclosed. The MOS device includes a substrate of a first impurity type, a diffused region of a second impurity type in the substrate, a patterned first dielectric layer including a first dielectric portion over the diffused region, a patterned first conductive layer on the patterned...

06/19/14 - 20140167157 - Source/drain extension control for advanced transistors
A planar transistor with improved performance has a source and a drain on a semiconductor substrate that includes a substantially undoped channel extending between the source and the drain. A gate is positioned over the substantially undoped channel on the substrate. Implanted source/drain extensions contact the source and the drain,...

06/05/14 - 20140151793 - Semiconductor device
A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active...

06/05/14 - 20140151794 - Semiconductor device including a redistribution layer and metallic pillars coupled thereto
A semiconductor device and method of forming the same including, in one embodiment, a semiconductor die formed with a plurality of laterally diffused metal oxide semiconductor (“LDMOS”) cells. The semiconductor device also includes a redistribution layer electrically coupled to the plurality of LDMOS cells and a plurality of metallic pillars...

06/05/14 - 20140151795 - Semiconductor device including gate drivers around a periphery thereof
A semiconductor device and method of forming the same including, in one embodiment, a semiconductor die formed with a plurality of laterally diffused metal oxide semiconductor (“LDMOS”) cells, and a metallic layer electrically coupled to the plurality of LDMOS cells. The semiconductor device also includes a plurality of gate drivers...

06/05/14 - 20140151796 - Hybrid high voltage device and manufacturing method thereof
The present invention discloses a hybrid high voltage device and a manufacturing method thereof. The hybrid high voltage device is formed in a first conductive type substrate, and includes at least one lateral double diffused metal oxide semiconductor (LDMOS) device region and at least one vent device region, wherein the...

05/29/14 - 20140145261 - High voltage drain-extended mosfet having extra drain-od addition
An integrated circuit includes a high-voltage well having a first doping type, a first doped region and a second doped region embedded in the high-voltage well, the first and second doped regions having a second doping type and spaced apart by a channel in the high-voltage well, source/drain regions formed...

05/08/14 - 20140124857 - Semiconductor device and method of forming the same
A semiconductor device may include a semiconductor substrate, a first conductive type well and a second conductive type drift region in the semiconductor substrate, the drift region including a first drift doping region and a second drift doping region, the second drift doping region vertically overlapping the well, and a...

05/01/14 - 20140117444 - Lateral mosfet
A lateral MOSFET comprises a plurality of isolation regions formed in a substrate, wherein a first isolation region is of a top surface lower than a top surface of the substrate. The lateral MOSFET further comprises a gate electrode layer having a first gate electrode layer formed over the first...

03/13/14 - 20140070312 - Semiconductor device and related fabrication methods
Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a first vertical drift region of semiconductor material, a second vertical drift region of semiconductor material, and a buried lateral drift region of semiconductor material that abuts the vertical drift regions. In one or more...

03/13/14 - 20140070313 - Power mosfet current sense structure and method
A power MOSFET has a main-FET (MFET) and an embedded current sensing-FET (SFET). MFET gate runners are coupled to SFET gate runners by isolation gate runners (IGRs) in a buffer space between the MFET and the SFET. In one embodiment, n IGRs (i=1 to n) couple n+1 gates of a...

03/06/14 - 20140061785 - Drain extended cmos with counter-doped drain extension
An integrated circuit containing a diode with a drift region containing a first dopant type plus scattering centers. An integrated circuit containing a DEMOS transistor with a drift region containing a first dopant type plus scattering centers. A method for designing an integrated circuit containing a DEMOS transistor with a...

02/06/14 - 20140035032 - Power device integration on a common substrate
A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an...

01/30/14 - 20140027846 - Semiconductor device
A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps...

01/23/14 - 20140021540 - Ldmos sense transistor structure for current sensing at high voltage
An integrated circuit includes a high voltage n-channel MOS power transistor integrated with a high voltage n-channel MOS blocking transistor. The power transistor and the blocking transistor have electrically coupled drain contact regions. In one embodiment, a drain area of the power transistor is separate from a drain area of...

01/09/14 - 20140008724 - Apparatus and method for mos transistor
A MOS transistor comprises a substrate of a first conductivity, a first region of the first conductivity formed over the substrate, a second region of the first conductivity formed in the first region, a first drain/source region of a second conductivity formed in the second region, a second drain/source region...

01/02/14 - 20140001545 - High breakdown voltage ldmos device
A multi-region (81, 83) lateral-diffused-metal-oxide-semiconductor (LDMOS) device (40) has a semiconductor-on-insulator (SOI) support structure (21) on or over which are formed a substantially symmetrical, laterally internal, first LDMOS region (81) and a substantially asymmetric, laterally edge-proximate, second LDMOS region (83). A deep-trench isolation (DTI) wall (60) substantially laterally terminates the...

01/02/14 - 20140001546 - Semiconductor device and driver circuit with a current carrying region and isolation structure interconnected through a resistor circuit, and method of manufacture thereof
Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within a portion of the substrate contained by the isolation structure, and a resistor circuit. The buried layer is positioned...

01/02/14 - 20140001547 - Semiconductor device including an edge area and method of manufacturing a semiconductor device
A semiconductor device includes a doped layer which contains a first dopant of a first conductivity type. In the doped layer, a counter-doped zone is formed in an edge area that surrounds an element area of the semiconductor device. The counter-doped zone contains at least the first dopant and a...

01/02/14 - 20140001548 - Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof
Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below...

01/02/14 - 20140001549 - Semiconductor device and driver circuit with an active device and isolation structure interconnected through a resistor circuit, and method of manufacture thereof
Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within a portion of the substrate contained by the isolation structure, and a resistor circuit. The buried layer is positioned...

01/02/14 - 20140001550 - High-frequency switching transistor and high-frequency circuit
A circuit includes first, second, third and fourth terminals, and first and second switches. The first switch switches a first signal from the first terminal to the second terminal or from the first terminal to the fourth terminal. The second switch switches a second signal from the third terminal to...

12/26/13 - 20130341717 - Semiconductor device with floating resurf region
A device includes a semiconductor substrate, a body region in the semiconductor substrate, having a first conductivity type, and including a channel region through which charge carriers flow, a drain region in the semiconductor substrate, having a second conductivity type, and spaced from the body region along a first lateral...

12/19/13 - 20130334599 - Integrated snubber in a single poly mosfet
A MOSFET device includes one or more active device structures and one or more dummy structures formed from semiconductor drift region and body regions. The dummy structures are electrically connected in parallel to the active device structures. Each dummy structure includes an electrically insulated snubber electrode formed proximate the body...

12/19/13 - 20130334600 - Transistor device and manufacturing method thereof
A transistor device and a manufacturing method thereof are provided. The transistor device includes a substrate, a first well, a second well, a shallow trench isolation (STI), a source, a drain and a gate. The first well is disposed in the substrate. The second well is disposed in the substrate....

12/05/13 - 20130320443 - Deep silicon via as a drain sinker in integrated vertical dmos transistor
A vertical DMOS device implements one or more deep silicon via (DSV) plugs, thereby significantly reducing the layout area and on-resistance (RDSON) of the device. The DSV plugs extend through a semiconductor substrate to contact a conductively doped buried diffusion region, which forms the drain of the vertical DMOS device....

12/05/13 - 20130320444 - Integrated circuit having vertical compensation component
An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is...

11/28/13 - 20130313641 - Double diffused metal oxide semiconductor device
The present invention discloses a double diffused metal oxide semiconductor (DMOS) device. The DMOS device is formed in a substrate, and includes a high voltage well, a first field oxide region, a first gate, a first source, a drain, a body region, a body electrode, a second field oxide region,...

10/24/13 - 20130277739 - Integrated lateral high voltage mosfet
An integrated circuit containing a dual drift layer extended drain MOS transistor with an upper drift layer contacting a lower drift layer along at least 75 percent of a common length of the two drift layers. An average doping density in the lower drift layer is between 2 and 10...

08/01/13 - 20130193512 - Semiconductor arrangement with active drift zone
A semiconductor device arrangement includes a semiconductor layer and at least one series circuit with a first semiconductor device and a plurality of n second semiconductor devices, with n>1. The first semiconductor device has a load path and active device regions integrated in the semiconductor layer. Each second semiconductor device...

07/25/13 - 20130187224 - Integration of trench mos with low voltage integrated circuits
A high voltage trench MOS and its integration with low voltage integrated circuits is provided. Embodiments include forming, in a substrate, a first trench with a first oxide layer on side surfaces; a narrower second trench, below the first trench with a second oxide layer on side and bottom surfaces,...

07/11/13 - 20130175613 - Semiconductor device with a lightly doped gate
According to one embodiment, a semiconductor device comprises a high-k gate dielectric overlying a well region having a first conductivity type formed in a semiconductor body, and a semiconductor gate formed on the high-k gate dielectric. The semiconductor gate is lightly doped so as to have a second conductivity type...

07/04/13 - 20130168767 - Lateral diffused metal-oxide-semiconductor device
The present invention provides a lateral diffused metal-oxide-semiconductor device including a first doped region, a second doped region, a third doped region, a gate structure, and a contact metal. The first doped region and the third doped region have a first conductive type, and the second doped region has a...

07/04/13 - 20130168768 - Semiconductor device with high breakdown voltage and manufacture thereof
A semiconductor device includes: first and second n-type wells formed in p-type semiconductor substrate, the second n-type well being deeper than the first n-type well; first and second p-type backgate regions formed in the first and second n-type wells; first and second n-type source regions formed in the first and...

05/30/13 - 20130134510 - Semiconductor device
In the interior of a semiconductor substrate having a main surface, a first p− epitaxial region is formed, a second p− epitaxial region is formed on the main surface side, and an n-type drift region and a p-type body region are formed on the main surface side. An n+ buried...

05/23/13 - 20130126971 - Silicon-carbide mosfet cell structure and method for forming same
In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (P type) and two parallel sources (N type) formed within the well. A Number of source rungs (doped N) connect sources at multiple locations. Regions between two rungs comprise a body (P...

04/18/13 - 20130093014 - Semiconductor device and method for fabricating the same
A semiconductor device includes a laterally double diffused metal oxide semiconductor (LDMOS) transistor formed on a partial region of a epitaxial layer of a first conductive type, a bipolar transistor formed on another partial region of the epitaxial layer of the first conductive type, and a guard ring formed between...

03/21/13 - 20130069157 - Semiconductor chip integrating high and low voltage devices
The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon. The chip may be formed in several different configurations. For example, the semiconductor chip may include a NPN bipolar transistor, PNP bipolar transistor, a diode, an N channel DMOS...

02/28/13 - 20130049112 - Electrostatic discharge protection device and applications thereof
An electrostatic discharge protection device comprises a substrate with a first conductivity, a gate, a drain structure and a source structure. The gate is disposed on a surface of the substrate. The drain structure with a second conductivity type comprises a first doping region with a first doping concentration disposed...

02/28/13 - 20130049113 - U-shape resurf mosfet devices and associated methods of manufacturing
The present technology discloses a U-shape RESURF MOSFET device. Wherein the MOSFET device comprises a drain having a drain contact region and a drift region, a source, a body, a gate and a recessed-FOX structure. Wherein the recessed-FOX structure is between the gate and the drift region vertically and between...

01/31/13 - 20130026568 - Planar srfet using no additional masks and layout method
A semiconductor power device is supported on a semiconductor substrate with a bottom layer functioning as a bottom electrode and an epitaxial layer overlying the bottom layer as the bottom layer. The semiconductor power device includes a plurality of FET cells and each cell further includes a body region extending...

01/24/13 - 20130020636 - High voltage device and manufacturing method thereof
The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a well of a substrate. The high voltage device includes: a field oxide region; a gate, which is formed on a surface of the substrate, and part of the gate...

01/24/13 - 20130020637 - Electronic device and a transistor including a trench and a sidewall doped region
An electronic device can include a first layer having a primary surface, a well region lying adjacent to the primary surface, and a buried doped region spaced apart from the primary surface and the well region. The electronic device can also include a trench extending towards the buried doped region,...

01/03/13 - 20130001688 - Self-aligned body fully isolated device
A device having a self-aligned body on a first side of a gate is disclosed. The self-aligned body helps to achieve very low channel length for low Rdson. The self-aligned body is isolated, enabling to bias the body at different bias potentials. The device may be configured into a finger...

12/20/12 - 20120319200 - Monolithically integrated circuit
A monolithically integrated circuit, particularly an integrated circuit for radio frequency power applications, may include a transistor and a spiral inductor. The spiral inductor is arranged above the transistor. An electromagnetic coupling is created between the transistor and the inductor. The transistor may have a finger type layout to prevent...