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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Short Channel Insulated Gate Field Effect Transistor > Gate Controls Vertical Charge Flow Portion Of Channel (e.g., Vmos Device) > Gate Electrode In Groove Gate Electrode In GrooveGate Electrode In Groove patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/24/08 - 20080017920 - Structure and method for improving shielded gate field effect transistors A field effect transistor is disclosed. In one embodiment, the field effect transistor includes a trench extending into a drift region of the field effect transistor. A shield electrode in a lower portion of the trench is insulated from the drift region by a shield dielectric. A gate electrode in ... 01/17/08 - 20080012070 - Apparatus for a self-aligned recessed access device (rad) transistor gate A method used in fabrication of a recessed access device transistor gate has increased tolerance for mask misalignment. One embodiment of the invention comprises forming a vertical spacing layer over a semiconductor wafer, then etching the vertical spacing layer and the semiconductor wafer to form a recess in the wafer. ... 01/17/08 - 20080012068 - Process for forming a short channel trench mosfet and device formed thereby A process for forming a short channel trench MOSFET. The process includes forming a first implant at the bottom of a trench that is formed in the body of the trench MOSFET and forming a second or angled implant that is tilted in its orientation and directed perpendicular to the ... 01/03/08 - 20080001220 - Power mos device A semiconductor device comprises a drain, a body disposed over the drain, having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a gate trench extending through the source and the body into the drain, a gate disposed in ... 01/03/08 - 20080001219 - Power mos device A semiconductor device comprises a drain, a body disposed over the drain, having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a gate trench extending through the source and the body into the drain, a gate disposed in ... 01/03/08 - 20080001218 - Metal oxide semiconductor (mos) transistors having three dimensional channels Unit cells of metal oxide semiconductor (MOS) transistors are provided including an integrated circuit substrate and a MOS transistor on the integrated circuit substrate. The MOS transistor has a source region, a drain region and a gate region, the gate region being between the source region and the drain region. ... 01/03/08 - 20080001216 - Trench transistor A trench transistor is disclosed. One embodiment has an active zone enclosed by an edge trench, wherein an edge electrode at gate potential is embedded into the edge trench, and the active zone has a mesa structure at least partly adjoining the edge trench. That region of the mesa structure ... 12/20/07 - 20070290260 - Trench type mosfet and method of fabricating the same A Trench MOSFET of an embodiment of the present invention includes: a semiconductor substrate including a substrate, an epitaxial layer, a body region, and a highly doped source region. The substrate, the epitaxial layer, the body region, and the highly doped source region are adjacently formed in this order. A ... 12/06/07 - 20070278566 - Semiconductor device A semiconductor device includes a base layer of a first conductivity type, a barrier layer of a first conductivity type formed on the base layer, a trench formed from the surface of the barrier layer to such a depth as to reach a region in the vicinity of an interface ... 11/29/07 - 20070272978 - Semiconductor device including a vertical gate zone, and method for producing the same A semiconductor device includes a semiconductor body defining a trench structure having walls. A plurality of vertical gate zones each have a gate electrode and a gate oxide that covers the walls of the trench structure. A body zone of a first conduction type is arranged between two of the ... 11/01/07 - 20070252200 - High voltage transistor and method for fabricating the same A high voltage transistor operating through a high voltage and a method for fabricating the same are provided. The high voltage transistor includes: an insulation layer on a substrate; an N+-type drain junction region on the insulation layer; an N−-type drain junction region on the N+-type drain junction region; a ... 11/01/07 - 20070252197 - Polysilicon control etch-back indicator This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining ... 10/25/07 - 20070246770 - Semiconductor device and method of manufacturing the same A semiconductor device, including a semiconductor region of the first conduction type which is formed on a semiconductor substrate; a gate electrode at least part of which is present within a trench which is selectively formed in part of the semiconductor region, and an extended top end portion of which ... 10/18/07 - 20070241394 - Insulated gate semiconductor device The present invention provides an insulated gate semiconductor device which has floating regions around the bottoms of trenches and which is capable of reliably achieving a high withstand voltage. An insulated gate semiconductor device 100 includes a cell area through which current flows and an terminal area which surrounds the ... 10/11/07 - 20070235801 - Self-aligned body contact for a semicondcutor-on-insulator trench device and method of fabricating same A structure and method of forming a body contact for an semiconductor-on-insulator trench device. The method including: forming set of mandrels on a top surface of a substrate, each mandrel of the set of mandrels arranged on a different corner of a polygon and extending above the top surface of ... 10/04/07 - 20070228460 - Contact plug structure and method for preparing the same A contact plug structure for a checkerboard dynamic random access memory comprises a body portion, two leg portions connected to the body portion and a dielectric block positioned between the two leg portions. Each leg portion is electrically connected to a deep trench capacitor arranged in an S-shape manner with ... 10/04/07 - 20070228459 - Integrated semiconductor circuits and methods of making integrated semiconductor circuits An integrated semiconductor circuit includes a substrate having a surface of a first semiconductor material, at least one separating material formed on the surface and defining a through hole, and a guide region formed in the hole. The guide region comprises at least one second semiconductor material. The guide region ... 09/20/07 - 20070215938 - Semiconductor device and manufacturing method of the same Thinning a semiconductor substrate has been needed for reducing on-resistance in a semiconductor device such as a vertical MOS transistor, IGBT, or the like where a high current flows in the semiconductor substrate in a vertical direction. In this case, the thinning is performed to the extent that the semiconductor ... 09/20/07 - 20070215937 - Static random access memory unit A static random access memory (SRAM) unit comprising a substrate, a gate dielectric layer, a gate, a trench capacitor, a pair of source/drain regions, a first contact and a second contact is provided. The substrate has a trench formed therein. The gate dielectric layer is disposed on the substrate and ... 08/30/07 - 20070200170 - Semiconductor device and method of manufacturing the same A semiconductor device includes an isolation region, a semiconductor element region defined by the isolation region, and having a channel forming portion and a recessed portion, the recessed portion being formed between the isolation region and the channel forming portion, and an epitaxial semiconductor portion formed in the recessed portion, ... 08/23/07 - 20070194373 - Cmos structure and method including multiple crystallographic planes A complementary metal oxide semiconductor (CMOS) structure includes a semiconductor substrate having first mesa having a first ratio of channel effective horizontal surface area to channel effective vertical surface area. The CMOS structure also includes a second mesa having a second ratio of the same surface areas that is greater ... 08/16/07 - 20070187753 - Super trench mosfet including buried source electrode and method of fabricating the same In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the ... 08/16/07 - 20070187752 - Memory cell with a vertical transistor and fabrication method thereof A memory cell with a vertical transistor has a semiconductor silicon substrate with a deep trench, in which the deep trench has a first sidewall region and a second sidewall region. A first insulating layer is formed overlying the first sidewall region. A second insulating layer is formed overlying the ... 08/16/07 - 20070187751 - Method of fabrication and device configuration of asymmetrical dmosfet with schottky barrier source A trenched semiconductor power device includes a trenched gate insulated by a gate insulation layer and surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a semiconductor substrate. The source region surrounding the trenched gate includes a metal of ... 08/09/07 - 20070181939 - Trench-gate semiconductor devices and the manufacture thereof A vertical trench-gate semiconductor device wherein the trench-gates extend in stripes, the source regions extend transversely between the trenchgates in stripes, projection (20) of the source stripes across the trench-gates defines intermediate trench portions (22) between the projected source stripes, and mutually spaced regions (14,14′) of the second conductivity type ... 08/02/07 - 20070176232 - Dram access transistor and method of formation Self-aligned recessed gate structures and method of formation are disclosed. Field oxide areas for isolation are first formed in a semiconductor substrate. A plurality of columns are defined in an insulating layer formed over the semiconductor substrate subsequent to which a thin sacrificial oxide layer is formed over exposed regions ... 08/02/07 - 20070176231 - Varying mesa dimensions in high cell density trench mosfet Circuits, methods, and apparatus for power MOSFETs having a high cell density for a high current carrying capability while maintaining a low pinched-base resistance. One device employs a number of transistor cells having varying mesa (regions between trench gates) sizes. A heavy body etch is utilized in larger cells to ... 07/26/07 - 20070170498 - Configuration and method to form mosfet devices with low resistance silicide gate and mesa contact regions A novel integration scheme for forming power MOSFET, particularly forming salicides for both gate and mesa contact regions, as well as using multiple energy contact implants through the salicided layer to form conductive body contacts which short to the source region by the salicides. ... 07/19/07 - 20070164354 - Mos transistor with elevated source and drain structures and method of fabrication thereof A transistor and method of formation thereof includes source and drain extension regions in which the diffusion of dopants into the channel region is mitigated or eliminated. This is accomplished, in part, by elevating the source and drain extension regions into the epitaxial layer formed on the underlying substrate. In ... 07/19/07 - 20070164353 - Semiconductor device and method for manufacturing the same A semiconductor device of the present invention includes vertical double diffused MOS transistor. A gate electrode of the vertical double diffused MOS transistor is disposed within a trench formed on a semiconductor substrate and projects from a surface of the semiconductor substrate. On a side surface of the gate electrode, ... 07/12/07 - 20070158740 - Semiconductor device and manufacturing method of the semiconductor device A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor substrate and the p-type channel region is disclosed. The junction layer has n-type drift regions and p-type partition regions alternately arranged in the direction in parallel with the principal ... 07/05/07 - 20070152268 - Semiconductor component and method A semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a drift region of a first conductivity type, a body region of a second conductivity type, and a trench extending into the body region. A semiconductor region of the first conductivity ... 06/28/07 - 20070145475 - Semiconductor device A semiconductor device is discloses that includes an n-type semiconductor substrate; an alternating conductivity type layer on semiconductor substrate, the alternating conductivity type layer including n-type drift regions and p-type partition regions arranged alternately; p-type channel regions on the alternating conductivity type layer; and trenches formed from the surfaces of ... 06/21/07 - 20070138546 - Semiconductor device A semiconductor device includes: a semiconductor layer, a first semiconductor region provided on a major surface of the semiconductor layer, a second semiconductor region provided in a surface portion of the first semiconductor region, a trench extending through the second semiconductor region and the first semiconductor region to the semiconductor ... 06/21/07 - 20070138545 - Semiconductor device having a trench gate and method of fabricating the same A method of fabricating a semiconductor device having a trench gate is provided. First, a semiconductor substrate having a trench etch mask thereon is provided. The semiconductor substrate is etched to form a first trench having a first depth using the trench etch mask as a shield. Impurities are doped ... 06/21/07 - 20070138544 - Field plate trench transistor and method for producing it A field plate trench transistor having a semiconductor body is disclosed. In one embodiment, the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and ... 06/14/07 - 20070132017 - Semiconductor device and manufacturing method of same The characteristic of the semiconductor device of this invention is that the device has a piercing hole 10 formed in the semiconductor layer to touch a first metal film 18, a insulating film 12 formed on the side wall of the piercing hole 10, a second metal film 13 disposed ... 06/14/07 - 20070132016 - Trench ld structure A lateral conduction MOSFET has a trench between and separating surface source and drain electrodes. A gate insulation lines one vertical wall of the trench and a polysilicon gate mass is disposed adjacent the gate insulator and fills a portion of the width of the trench. The conduction path from ... 06/14/07 - 20070132015 - Semiconductor device and manufacturing method thereof A semiconductor device includes, on a semiconductor substrate, an active region surrounded by an STI region, a gate trench formed in one direction transverse to the active region, a gate insulating film formed on a side surface of the gate trench, an insulating film formed on a bottom of the ... 06/07/07 - 20070126056 - Trench structure semiconductor device and method for producing it A trench structure semiconductor device is disclosed. In one embodiment, field electrode devices are arranged in a trench structure, in direct spatial proximity in comparison with essentially planar or smooth conditions, have an enlarged common interface region with an insulation material in between, whereby a comparatively stronger electrical coupling of ... 06/07/07 - 20070126055 - Trench insulated gate field effect transistor The invention relates to a trench MOSFET with drain (8), drift (10) body (12) and source (14) regions. The drift region is doped to have a high concentration gradient. A field plate electrode (34) is provided adjacent to the drift region (10) and a gate electrode (32) next to the ... 05/31/07 - 20070120183 - Integrated circuit devices having active regions with expanded effective widths An integrated circuit device includes a substrate having a trench formed therein. An isolation layer is disposed in the trench so as to cover a first sidewall portion of the trench and an entire bottom of the trench without covering a second sidewall portion of the trench. A buffer layer ... 05/31/07 - 20070120182 - Transistor having recess gate structure and method for fabricating the same A transistor having a recess gate structure and a method for fabricating the same. The transistor includes a gate insulating layer formed on the inner walls of first trenches formed in a semiconductor substrate; a gate conductive layer formed on the gate insulating layer for partially filling the first trenches; ... 05/24/07 - 20070114602 - Semiconductor device A semiconductor device includes: a first semiconductor layer of a first conductivity type; a first semiconductor region of the first conductivity type and a second semiconductor region of a second conductivity type alternately arranged in a lateral direction on the first semiconductor layer of the first conductivity type; a third ... 05/24/07 - 20070114601 - Gate contact structure for a power device A gate contact structure for a power device comprises a substrate having a trench, a gate conductor in the trench and striding over a side of the trench, a first insulator between the gate conductor and the trench, a second insulator covering the gate conductor, a contact window in the ... 05/24/07 - 20070114600 - Trench transistor and method for fabricating a trench transistor A trench transistor having a semiconductor body, in which a trench structure and an electrode structure embedded in the trench structure is disclosed. The electrode structure is electrically insulated from the semiconductor body by an insulation structure. The electrode structure has a gate electrode structure and a field electrode structure ... 05/24/07 - 20070114599 - High density trench mosfet with reduced on-resistance A method for manufacturing a trenched metal oxide semiconductor field effect transistor (MOSFET) cell includes the steps of opening a gate trench in a semiconductor substrate and implanting ions of a first conductivity type same as a conductivity type of a source region with at least two levels of implanting ... 05/24/07 - 20070114598 - Trench gate field effect devices The present invention relates to a technique for reducing the on-voltage of the semiconductor device by increasing the concentration of minority carriers in the deep region (26) and the intermediate region (28). A semiconductor device according to the invention comprises an electrode, a top region (36) of a second conductivity ... 05/17/07 - 20070108516 - Semiconductor device and method of manufacturing the same A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. ... 05/17/07 - 20070108515 - Trench mosfet The invention relates to a trench MOSFET with drain (8), dπ ft region (10) body (12) and source (14). In order to improve the figure of meπt for use of the MOSFET as control and sync FETs, the trench (20) is partially filled with dielectric (24) adjacent to the drift ... 05/17/07 - 20070108514 - Semiconductor device and method of fabricating the same A semiconductor device according to the present invention, which comprises a MISFET, has a semiconductor layer (3) having a recessed portion (101) formed in the surface thereof, the recessed portion (101) having an opening the outer circumference of which is closed, a gate insulating film (13) formed so as to ... 05/10/07 - 20070102758 - Semiconductor device and method for manufacturing the same A semiconductor device may include a semiconductor substrate having a recessed surface, a gate insulating layer formed on the recessed surface of the semiconductor substrate, a gate electrode formed on the gate insulating layer, and a source/drain area formed at both sides of the gate electrode, according to embodiments. ... 05/03/07 - 20070096204 - Method for manufacturing semiconductor device A method for manufacturing a semiconductor device whereby the process is simplified and high performance can be obtained in both a trench-gate transistor and a planar transistor that has a thin gate insulating film when the two transistors are formed on the same semiconductor substrate. In a state in which ... 05/03/07 - 20070096203 - Recessed channel negative differential resistance-based memory cell Disclosed herein is an improved recessed thyristor-based memory cell. The disclosed cell comprises in one embodiment a conductive plug recessed into the bulk of the substrate, which is coupled to or comprises the enable gate of the cell. Vertically disposed around this recessed gate is a thyristor, whose anode (source; ... 04/26/07 - 20070090453 - Non-volatile memory and manufacturing method and operating method thereof A non-volatile memory unit includes a substrate, a conductive layer, a charge storage layer, a first doped regions, two second doped regions, a first bit line and a second bit line. Wherein, there is a trench in the substrate, the conductive layer is disposed in the substrate and filled the ... 04/26/07 - 20070090452 - Recess channel transistor for preventing deterioration of device characteristics due to misalignment of gate layers and method of forming the same The recess channel transistor includes: a semiconductor substrate including a device insulation layer defining an activation region in which recesses are formed; insulation buffer patterns, each of which is formed at an opening of the recess on a surface of the substrate; gates, each of which includes a recess gate ... 04/19/07 - 20070085136 - Field electrode trench transistor structure with voltage divider A trench transistor structure having a field electrode arrangement formed in trenches is disclosed. In one embodiment, the field electrode arrangement is conductively connected to subvoltage taps of a voltage divider for the purpose of stabilizing the potentials on a longer time scale than dynamic charge reversal processes. ... 04/12/07 - 20070080396 - Metal oxide semiconductor device and fabricating method thereof A method of fabricating an MOS device is described. A substrate doped a first type dopant is provided as a drain. A first type epitaxial layer is formed on the substrate and is patterned with a trench to form several islands. A gate dielectric layer is than formed on the ... 04/05/07 - 20070075360 - Cobalt silicon contact barrier metal process for high density semiconductor power devices This invention discloses an improved trenched metal oxide semiconductor field effect transistor (MOSFET) cell that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a source contact opening ... 03/29/07 - 20070069287 - Insulated gate transistor incorporating diode A p-type base layer shaped like a well is formed for each of IGBT cells, and a p+-type collector layer and an n+-type cathode layer are formed on a surface opposite to a surface on which the p-type base layer is formed so as to be situated just below the ... 03/29/07 - 20070069286 - Semiconductor device having an interconnect with sloped walls and method of forming the same A semiconductor device having at least one lateral channel with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes ... 03/22/07 - 20070063272 - Semiconductor power device with insulated gate formed in a trench, and manufacturing process thereof A semiconductor power device has a semiconductor body with a first conductivity type. A trench extends in the semiconductor body and accommodates an insulating structure, which extends along the side walls and bottom of the trench. The insulating structure surrounds a conductive region, arranged on the bottom of the trench, ... 03/22/07 - 20070063271 - Lateral double-diffused field effect transistor and integrated circuit having same In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than ... 03/22/07 - 20070063270 - Transistors including laterally extended active regions and methods of fabricating the same A transistor includes a substrate and an isolation region disposed in the substrate. The isolation regions defines an active region comprising upper and lower active regions, the upper active region having a first width and the lower active region having a second width greater than the first width. An insulated ... 03/22/07 - 20070063269 - Trench igbt with increased short circuit capability A trench type IGBT has a gate oxide lining the side walls and bottom of the trench which have a thickness greater than 1500Å and in the range of 1800Å to 2500Å, and preferably 2000Å to increase the device short circuit capability. ... 03/22/07 - 20070063268 - Non-volatile memory, and operation and fabrication of the same A non-volatile memory cell is described, including a semiconductor substrate with a trench therein, a charge-trapping layer in the trench, a gate disposed in the trench and separated from the substrate by at least the charge-trapping layer, and S/D regions in the substrate beside the trench. The gate includes a ... 03/08/07 - 20070052014 - Trench semiconductor device of improved voltage strength, and method of fabrication A trench IGBT is disclosed which includes a semiconductor substrate having formed therein a set of cell trenches formed centrally and a set of annular guard trenches concentrically surrounding the cell trenches. The cell trenches receive cell trench conductors via cell trench insulators for providing IGBT cells. The guard trenches ... 03/08/07 - 20070052013 - Semiconductor device having decoupling capacitor and method of fabricating the same A semiconductor device having a decoupling capacitor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a cell region, a first peripheral circuit region, and a second peripheral circuit region. At least one channel trench is disposed in the cell region of ... 03/01/07 - 20070045726 - Semiconductor device and method for manufacturing thereof A semiconductor device having high withstand voltage is provided. An active groove 22a includes a long and narrow main groove part 26 and a sub groove part 27 connected to a longitudinal side surface of the main groove part, and a buried region 24 of a second conductivity type whose ... 03/01/07 - 20070045725 - Gate-all-around integrated circuit devices Gate-all-around integrated circuit devices include first and second source/drain regions on an active area of an integrated circuit substrate. The first and second source/drain regions form p-n rectifying junctions with the active area. A channel region extends between the first and second source/drain regions. An insulated gate electrode surrounds the ... 03/01/07 - 20070045724 - Gate pattern of semiconductor device and method for fabricating the same A gate pattern of a semiconductor device and a method for fabricating the same are provided. The gate pattern includes a substrate with a trench, a gate insulation layer, a first gate electrode layer and a second gate electrode layer. The gate insulation layer is formed over the substrate with ... 03/01/07 - 20070045723 - Semiconductor device having an under stepped gate for preventing gate failure and method of manufacturing the same A semiconductor device and a method of manufacturing the same capable of preventing a not open fail of a landing plug contact caused by the leaning of a gate. The method includes the steps of preparing a semiconductor substrate, forming first recesses by etching an active area of the semiconductor ... 03/01/07 - 20070045722 - Non-volatile memory and fabrication thereof A non-volatile memory cell is described, including a semiconductor body of a first conductivity type, a trapping layer, a gate, and a first to a third doped regions of a second conductivity type. The semiconductor body has a trench thereon, the trapping layer is disposed on the surface of the ... 02/22/07 - 20070040215 - Power semiconductor device with interconnected gate trenches A power semiconductor device which includes a plurality of gate trenches and a perimeter trench intersecting the gate trenches. ... 02/22/07 - 20070040214 - Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge The cellular structure of the power device includes a substrate that has a highly doped drain region. Over the substrate there is a more lightly doped epitaxial layer of the same doping. Above the epitaxial layer is a well region formed of an opposite type doping. Covering the wells is ... 02/22/07 - 20070040213 - Trench gate field effect devices The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus increasing the concentration of minority carriers in the intermediate region. A semiconductor device has a top region (34) of a ... 02/15/07 - 20070034943 - Insulated gate semiconductor device and manufacturing method thereof Two metal electrode layers are provided. A first electrode layer is patterned with a minute separation distance according to an element region as in the case of the conventional case. Meanwhile, it suffices that a second electrode layer be in contact with the first electrode layer. Thus, no problems arise ... 02/01/07 - 20070023829 - Split electrode gate trench power device A power semiconductor device which includes gate liners extending along gate insulation liners and an insulation block spacing the two gate liners. ... 02/01/07 - 20070023828 - Semiconductor device and method of manufacturing the same A semiconductor device comprises a semiconductor substrate having a gate trench formed therein. A gate electrode is formed on a gate insulator in the gate trench. The gate electrode has ends close to the bottom of the gate trench, which are separated in a direction perpendicular to both sides of ... 02/01/07 - 20070023827 - Semiconductor structure with improved on resistance and breakdown voltage performance In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The lateral FET cell includes a super junction structure formed in a drift region between a drain contact and a body region. The super junction structure includes a plurality of spaced apart filled trenches bounding ... 01/25/07 - 20070018243 - Semiconductor element and method of manufacturing the same A semiconductor element is provided, comprising a first semiconductor layer of the first conduction type; and a pillar layer including first semiconductor pillars of the first conduction type and second semiconductor pillars of the second conduction type arranged periodically and alternately on the first semiconductor layer. A semiconductor base layer ... 01/25/07 - 20070018242 - Power semiconductor device Disclosed is a power semiconductor device, including: a gate electrode having a cross section having a length in a vertical direction, and having a shape extending in a direction orthogonal to the cross section; a gate insulating film surrounding the gate electrode; an n-type source layer positioning to face the ... 01/25/07 - 20070018241 - Early contact, high cell density process A method of fabricating a power semiconductor device in which contact trenches are formed prior to forming the gate trenches. ... 01/25/07 - 20070018240 - Electronic device including discontinuous storage elements An electronic device can include a substrate having a trench that includes a wall and a bottom. The electronic device can also include a first set of discontinuous storage elements that overlie a primary surface of the substrate and a second set of discontinuous storage elements that lie within the ... 01/11/07 - 20070007589 - Semiconductor device A first main electrode is provided on one surface thereof. On the other surface thereof, a second semiconductor layer of the first conduction type and a third semiconductor layer of the second conduction type are arranged alternately along the surface. A fourth semiconductor layer of the second conduction type and ... 01/11/07 - 20070007588 - Insulated gate semiconductor device, protection circuit and their manufacturing method A first electrode layer, which comes into contact with a source region, and a second electrode layer, which comes into contact with a body (back gate) region, are provided. The first and second electrode layers are insulated from each other and are extended in a direction different from an extending ... 01/11/07 - 20070007587 - Diode A diode has a semiconductor body (1), which has a front side (11) and a rear side (12) opposite the front side (11) in a vertical direction (z) of the semiconductor (1), and in which a heavily n-doped zone (5), a weakly n-doped zone (4), a weakly p-doped zone (3) ... 01/11/07 - 20070007586 - Method of forming a charge-trapping memory device In a charge-trapping device having an array of memory cells, which are controlled by word lines buried in trenches within a substrate, further trenches are formed parallel to said word lines within said substrate. These subdivide diffusion regions adjacent to the word lines into each a first diffusion region adjacent ... 01/04/07 - 20070001220 - Nanotube transistor and rectifying devices Single-walled carbon nanotube transistor and rectifying devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another material. Electrodes for source and drain of a transistor are provided at opposite ends of the single-walled ... 12/28/06 - 20060289931 - Recessed gate structures including blocking members, methods of forming the same, semiconductor devices having the recessed gate structures and methods of forming the semiconductor devices A recessed gate structure in a semiconductor device includes a gate electrode partially buried in a substrate, a blocking member formed in the buried portion of the gate electrode, and a gate insulation layer formed between the gate electrode and the substrate. The blocking member may effectively prevent a void ... 12/28/06 - 20060289930 - Semiconductor device and method of fabricating the same Aiming at providing a semiconductor device capable of reducing the ON-resistance when voltage smaller than a predetermined value is applied to the base region and the drift region, and capable of increasing the ON-resistance so as to prevent thermal fracture when the voltage is not smaller than the predetermined value, ... 12/28/06 - 20060289929 - Structure and method for forming laterally extending dielectric layer in a trench-gate fet A field effect transistor (FET) is formed as follows. A trench is formed in a silicon region. An oxidation barrier layer is formed over a surface of the silicon region adjacent the trench and along the trench sidewalls and bottom. A protective layer is formed over the oxidation barrier layer ... 12/28/06 - 20060289928 - Insulated gate type semiconductor device and manufacturing method thereof The invention is intended to present an insulated gate type semiconductor device that can be manufactured easily and its manufacturing method while realizing both higher withstand voltage design and lower on-resistance design. The semiconductor device comprises N+ source region 31, N+ drain region 11, P− body region 41, and N− ... 12/07/06 - 20060273388 - Semiconductor device and method for manufacturing the same A semiconductor device is provide with a semiconductor substrate, a groove formed in the semiconductor substrate, a gate insulting film formed on the inner wall of the groove, a gate electrode formed in the groove, and a source/drain region and an LDD region arranged in the direction that is substantially ... 12/07/06 - 20060273387 - Insulated gate-type semiconductor device and manufacturing method thereof This invention has a purpose to provide an insulated gate-type semiconductor device and its manufacturing method in which a decrease in gate insulation dielectric strength voltage and a reduction in manufacturing costs are both achieved. First, (a) a CZ bulk substrate is prepared. Next, (b) P− diffused layer and N+ ... 12/07/06 - 20060273386 - Trench-gate field effect transistors and methods of forming the same A field effect transistor includes a body region of a first conductivity type over a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminates within the semiconductor region. At least one conductive shield electrode is disposed in the gate trench. A gate ... 12/07/06 - 20060273385 - Trenched mosfet device with contact trenches filled with tungsten plugs A trenched semiconductor power device that includes a trenched gate disposed in an extended continuous trench surrounding a plurality of transistor cells in an active cell area and extending as trench-gate fingers to intersect with a trenched gate under the gate metal runner at a termination area. At least one ... 12/07/06 - 20060273384 - Structure for avalanche improvement of ultra high density trench mosfet A trenched metal oxide semiconductor field effect transistor (MOSFET) cell that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a source-body contact trench opened with sidewalls substantially ... 12/07/06 - 20060273383 - High density hybrid mosfet device A hybrid semiconductor power device that includes a plurality of closed power transistor cells each surrounded by a first and second trenched gates constituting substantially a closed cell and a plurality of stripe cells comprising two substantially parallel trenched gates constituting substantially an elongated stripe cell wherein the closed cells ... 12/07/06 - 20060273382 - High density trench mosfet with low gate resistance and reduced source contact space A trenched metal oxide semiconductor field effect transistor (MOSFET) device that includes gate contact trenches and source contact trenches opened through oxide insulation layers into the gate polysilicon and the body-source silicon regions. The gate contact trenches and the source contact trenches are filled with gate contact plug and source ... 12/07/06 - 20060273381 - Transistor and method for fabricating the same Disclosed are a transistor and a method for fabricating the same capable of increasing a threshold voltage and a driving current of the transistor. The method includes the steps of forming a first etch mask on a silicon substrate, forming a trench by etching the exposed isolation area, forming a ... 12/07/06 - 20060273380 - Source contact and metal scheme for high density trench mosfet A trenched metal oxide semiconductor field effect transistor (MOSFET) cell that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a source-body contact trench opened with sidewalls substantially ... 12/07/06 - 20060273379 - Mosfet using gate work function engineering for switching applications This invention discloses a new MOSFET device. The MOSFET device has an improved operation characteristic achieved by manufacturing a MOSFET with a higher gate work function by implementing a P-doped gate in an N-MOSFET device. The P-type gate increases the threshold voltage and shifts the C-Vds characteristics. The reduced Cgd ... 11/30/06 - 20060267085 - Trech-type vertical semiconductor device having gate electrode buried in rounded hump opening In a semiconductor device including a gate electrode buried in a trench of the device, the trench is constructed by a first opening with a uniform width the same as that of an upper portion of the first opening and a second opening beneath the first opening with a width ... 11/30/06 - 20060267084 - Semiconductor memory device A semiconductor memory device comprises a plurality of memory cells, each memory cell having a respective transistor. The transistor comprises a transistor body of a first conductivity type, a drain area and a source area each having a second conductivity type, wherein said drain area and source area are embedded ... 11/23/06 - 20060261407 - High-voltage transistor fabrication with trench etching technique A lateral high-voltage depletion-mode device structure in which fingers of semiconductor material are interdigitated with trench gates. Since the effective channel area is proportional to the depth of the trenches, a large amount of active channel area can be achieved for a given surface area. ... 11/16/06 - 20060255402 - Elimination of gate oxide weak spot in deep trench A MOSFET with a 0.7˜2.0 micrometers deep trench is formed by first carrying out a processing step of opening a trench in a semiconductor substrate. A thick insulator layer is then deposited in the trench such that the film at the bottom of the trench is much thicker than the ... 11/02/06 - 20060244057 - Multiple oxide thicknesses for merged memory and logic applications Structures are provided for multiple oxide thicknesses on a single silicon wafer. In particular, structures are provided for multiple gate oxide thicknesses on a single chip. The chip can include circuitry including but not limited to the memory and logic technologies. These structures for multiple oxide thickness on a single ... 11/02/06 - 20060244056 - Semiconductor device A semiconductor device having a vertical MOSFET structure well balanced between high withstand voltage and low ON resistance is provided as having an n+-type semiconductor substrate 101 as a first-conductivity-type semiconductor substrate, an n-type drift region 102 as a first-conductivity-type drift region formed on the surface of an n+-type semiconductor ... 11/02/06 - 20060244055 - Transistor structure of memory device and method for fabricating the same A memory device includes an active area protruding from a semiconductor substrate. A recess is formed in the active area. A field oxide layer is formed on the semiconductor substrate. A gate electrode extends across the active area while being overlapped with the recess. A gate insulation layer is interposed ... 10/26/06 - 20060237783 - Semiconductor device having a recess channel and method for fabricating the same Provided is a semiconductor device having recess channel, comprising a semiconductor substrate having first and second trenches disposed to cross each other on both sides of an active region among adjoining regions between an active region and element-isolation films; a gate insulation film disposed on the semiconductor substrate of the ... 10/26/06 - 20060237782 - Power semiconductor device with l-shaped source region A power semiconductor device includes a substrate, a well region, a body region, a trench gate, a gate oxide layer, an L-shaped source region, an inter-layer dielectric layer and a metal layer. The body region is formed on the well region. The trench gate is formed at bilateral sides of ... 10/26/06 - 20060237781 - Structure and method for forming trench gate fets with reduced gate to drain charge a field effect transistor includes a trench extending into a semiconductor region. The trench has a gate dielectric lining the trench sidewalls and a gate electrode therein. A channel region in the semiconductor region extends along a sidewall of the trench. The gate dielectric has a non-uniform thickness such that ... 10/26/06 - 20060237780 - Semiconductor device having screening electrode and method In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a screening electrode spaced apart from a channel region. ... 10/12/06 - 20060226475 - Vertical field effect transistor A MOSFET has a base layer and a source layer in a cell surrounded by a trench gate formed in a semiconductor substrate. A trench contact is formed through the source layer and the base layer. The gate is polygonal such as square. The trench contact is thin and linear ... 10/05/06 - 20060220110 - Integrated circuit with protected implantation profiles and method for the formation thereof An integrated circuit structure includes providing a semiconductor substrate and forming at least one oxide-nitride-oxide dielectric layer above the semiconductor substrate. At least one implantation is formed into at least one area of the semiconductor substrate beneath the oxide-nitride-oxide dielectric layer subsequent to the formation of the oxide-nitride-oxide dielectric layer. ... 10/05/06 - 20060220109 - Selectively doped trench device isolation A selectively doped trench isolation device is provided. The trench isolation device of the preferred embodiment includes a semiconductor substrate having a trench. A thin field oxide layer is grown on the side walls of the trench, and the trench is filled with a heavily doped polysilicon. The work function ... 10/05/06 - 20060220108 - Field-effect transistor in semiconductor device, method of manufacturing the same A field-effect transistor has: a substrate having a first cavity; a gate electrode buried in the substrate; and diffusion layers formed in the substrate and being in contact with the first cavity. A channel region is formed substantially perpendicular to a surface of the substrate between the diffusion layers. ... 10/05/06 - 20060220107 - Mosfet with a second poly and an inter-poly dielectric layer over gate for synchronous rectification This invention discloses a new trenched vertical semiconductor power device that includes a capacitor formed between a conductive layer covering over an inter-dielectric layer disposed on top of a trenched gate. In a specific embodiment, the trenched vertical semiconductor power device may be a trenched metal oxide semiconductor field effect ... 09/21/06 - 20060208314 - Semiconductor device and manufacturing method for semiconductor device To provide a semiconductor device capable of reducing a gate capacitance, and preventing breakdown of a gate oxide film if a large amount of current flows. A semiconductor device according to an embodiment of the present invention includes: an epitaxial layer; a channel region formed on the epitaxial layer; a ... 09/14/06 - 20060202264 - Enhancing schottky breakdown voltage (bv) without affecting an integrated mosfet-schottky device layout This invention discloses a semiconductor power device that includes an active cell area having a plurality of power transistor cells and a junction barrier Schottky (JBS) area. The semiconductor power device includes the JBS area that further includes a plurality of Schottky diodes each having a PN junction disposed on ... 09/14/06 - 20060202263 - Nonvolatile semiconductor memory device and method of fabricating the same In an example embodiment, a semiconductor substrate has a plurality of active regions separated by a plurality of trenches. A gate insulation film fills at least a portion of the trenches, and a conductive gate film is formed over the gate insulation film. In an example embodiment, the gate insulation ... 08/31/06 - 20060192249 - Field effect transistors with vertically oriented gate electrodes and methods for fabricating the same In semiconductor devices, and methods of formation thereof, both planar-type memory devices and vertically oriented thin body devices are formed on a common semiconductor layer. In a memory device, for example, it is desirable to have planar-type transistors in a peripheral region of the device, and vertically oriented thin body ... 08/24/06 - 20060186466 - Vertical gate semiconductor device and method for fabricating the same A first region 11 functioning as a transistor includes a drain region 111, a body region 112 formed over the drain region 111, a source region 113A formed over the body region 112 and a trench formed through the body region 112 and having a gate electrode 120 buried therein. ... 08/17/06 - 20060180856 - Semicondutor device and a method of manufacturing the same CHSP≦3.80+0.148ρ. ... 08/17/06 - 20060180855 - Power mos device A semiconductor device comprises a drain, a body disposed over the drain, having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a gate trench extending through the source and the body into the drain, a gate disposed in ... 08/03/06 - 20060170039 - Buried channel type transistor having a trench gate and method of manufacturing the same In a method of manufacturing a buried channel type transistor, a trench is formed at a surface portion of a substrate. A first and a second threshold voltage control regions are formed at portions of the substrate beneath a bottom face of the trench and adjacent to a sidewall of ... 08/03/06 - 20060170038 - Non-volatile memory and manufacturing and operating method thereof A non-volatile memory is provided. A substrate having a plurality of trenches and a plurality of select gates is provided. The trenches are arranged in parallel and extend in a first direction. Each of the select gates is disposed on the substrate between two adjacent trenches respectively. A plurality of ... 08/03/06 - 20060170037 - Vertical type semiconductor device In a vertical type MOSFET device having a super junction structure, in which a N conductive type column region (2) and a P conductive type column region (3) are alternately aligned, regarding to a distance between a terminal end (17) of an active region (13) and a terminal end (16) ... 07/27/06 - 20060163650 - Power semiconductor device with endless gate trenches A power semiconductor device which includes endless gate trenches. ... 07/27/06 - 20060163649 - Insulated gate semiconductor device and method of manufacturing the same A trench MOSFET includes mesa regions between the trenches. The mesa regions are connected to an emitter electrode to fix the mesa region potential so that the mesa regions do not form a floating structure. P-type base regions are distributed in the mesa regions, and the distributed p-type base regions ... 07/20/06 - 20060157779 - Semiconductor device and manufacturing method of the same The on-resistance of a semiconductor device having a power transistor with a trench gate structure is reduced. A power MIS-FET with a trench gate structure is so formed that the relation expressed as 0≦b≦a holds, where a is the distance between an end of an interlayer insulating layer over the ... 07/20/06 - 20060157778 - Semiconductor device A power MOSFET includes an n-type drift layer and a p-type base layer formed in a layered manner on the n-type drift layer. Trench gates are formed to penetrate the p-type base layer to reach the n-type drift layer. On the p-type base layer, n+-type source regions and p+-type regions ... 07/13/06 - 20060151831 - Semiconductor device and method of fabricating the same A semiconductor device 100 includes an element-forming region having gate electrode 108 formed therein, and a circumferential region formed in the outer circumference of the element-forming region and having an element-isolating region 118 formed therein. On the main surface of the semiconductor substrate 101, there is formed a parallel pn ... 07/13/06 - 20060151830 - Electrical devices with multi-walled recesses The invention relates to a vertical transistor and an oxidation process that achieves a substantially curvilinear recess bottom. The recess serves as the gate receptacle that may facilitate a more uniform gate oxide layer. One embodiment relates to a storage cell that is disposed in the recess along with an ... 07/06/06 - 20060145247 - Trench transistor and method for producing it A trench transistor and method of making a trench transistor is disclosed. In one embodiment, the trench transistor has a semiconductor body in which a plurality of cell array trenches separated from one another by mesa regions are formed. Electrodes are embedded in the cell array trenches. A source region, ... 06/29/06 - 20060138535 - Semiconductor device having trench gate structure and manufacturing method thereof A vertical MOSFET includes a base region formed on a drain region and a source region formed in the base region. A trench is formed to extend from the surface of the source region and penetrate the source region and has depth to reach a portion near the drain region. ... 06/29/06 - 20060138534 - Nonvolatile memory device, method for fabricating the same, and method for programming/erasing data in the same A nonvolatile memory device, a method for fabricating the same, and a method for programming/erasing data in the same are provided. At least one of a plurality of device isolation films is filled with polysilicon and used as an acceleration line. The nonvolatile memory device includes a semiconductor substrate defined ... 06/29/06 - 20060138533 - Vertical trench transistor A vertical trench transistor has a first electrode, a second electrode and also a semiconductor body arranged between the first and second electrodes, there being formed in the semiconductor body a plurality of transistor cells comprising source region, body region, drift region and gate electrode and also contact holes for ... 06/22/06 - 20060131645 - Semiconductor device and manufacturing method thereof In the present invention, an npn junction or a pin junction is formed in an element peripheral part surrounding an element part. In addition, the same potential as that of a source electrode in the element part is applied, and a breakdown voltage of the element peripheral part is set ... 06/15/06 - 20060124998 - Nrom memory cell, memory array, related devices and methods An array of memory cells configured to store at least one bit per one F2 includes substantially vertical structures providing an electronic memory function spaced apart a distance equal to one half of a minimum pitch of the array. The structures providing the electronic memory function are configured to store ... 06/15/06 - 20060124997 - Semiconductor device and method of manufacturing the same A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second conductivity-type impurities and a semiconductor lower layer including first conductivity-type impurities whose concentration is lower than the first portion region constituting ... 06/15/06 - 20060124996 - Vertical trench gate transistor semiconductor device and method for fabricating the same A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body ... 06/15/06 - 20060124995 - Semiconductor device and manufacturing method for semiconductor device A conventional power MOSFET structure is difficult to improve a breakdown voltage of an element even using a super-junction structure. A power MOSFET according to an embodiment of the invention is a semiconductor device of a super-junction structure, including: a gate electrode filled in a trench formed on a semiconductor ... 06/08/06 - 20060118862 - Lateral trench transistor, as well as a method for its production A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region ... 06/08/06 - 20060118861 - Shallow trench isolation in floating gate devices The present invention provides a method for manufacturing a floating gate type semiconductor device on a substrate having a surface (2), and a device thus manufactured. The method comprises:—forming, on the substrate surface, a stack comprising an insulating film (4), a first layer of floating gate material (6) and a ... 06/01/06 - 20060113590 - Method of forming a recess structure, recessed channel type transistor and method of manufacturing the recessed channel type transistor An isolation layer having a first depth is formed from an upper face of a substrate. Source/drain regions including junctions are formed in the substrate. Each of the junctions has a second depth substantially smaller than the first depth. A first recess is formed in the substrate by a first ... 06/01/06 - 20060113589 - Top drain fet with integrated body short A top drain MOSgated device has its drain on the top of semiconductor die and its source on the bottom of the die substrate. Spaced parallel trenches extend from the die top surface through a drift region, a channel region and terminate on the substrate region. The bottoms of each ... 06/01/06 - 20060113588 - Self-aligned trench-type dmos transistor structure and its manufacturing methods The self-aligned trench-type DMOS transistor structure comprises a self-aligned source region being surrounded by a trench gate region. The self-aligned source region comprises a moderately-doped p-base diffusion region formed in a lightly-doped epitaxial semiconductor substrate, a self-aligned heavily-doped n+ source diffusion ring formed in a side surface portion of the ... 05/18/06 - 20060102953 - Semiconductor apparatus and method of manufacturing the same A semiconductor apparatus includes a semiconductor substrate of a first conductivity type, a base region of a second conductivity type formed on a principal surface of the semiconductor substrate, a trench formed in a periphery of the base region, and an endless source region of the first conductivity type formed ... 05/11/06 - 20060097314 - Semiconductor device and method of manufacturing the same After an element isolation region is formed using a field-forming silicon nitride film, the silicon nitride film and a semiconductor substrate are patterned. Thereafter, the silicon nitride film and the semiconductor substrate are patterned, thereby forming a gate trench reaching the semiconductor substrate in an active region. Next, after a ... 05/04/06 - 20060091458 - Nonvolatile memory device and method of manufacturing the same Provided are a nonvolatile memory device that has enhanced endurance and can accurately read stored data, and a method of manufacturing the same. The nonvolatile memory device includes a trench formed in a semiconductor substrate, a gate electrode formed in the trench, a gate electrode insulating layer interposed between the ... 05/04/06 - 20060091457 - Semiconductor device and method of manufacturing the same A semiconductor device includes a base region formed above a semiconductor substrate, a source region formed above the base region, a gate electrode filled inside a trench formed above the semiconductor substrate, an interlayer insulation film formed all over the semiconductor substrate, a first contact hole formed in the interlayer ... 05/04/06 - 20060091456 - Trench mosfet with deposited oxide A trench type power semiconductor device which includes deposited rather than grown oxide in the trenches for the electrical isolation of electrodes disposed inside the trenches from the semiconductor body. ... 05/04/06 - 20060091455 - Trench mosfet and method of manufacturing same A trench MOSFET of the present invention has a trench region on a semiconductor substrate. The semiconductor substrate contains: a substrate which is a p-type heavily doped drain region; an epitaxial layer which is a p-type lightly doped drain region; a n-type body region; and a p-type source diffusion region, ... 05/04/06 - 20060091454 - Semiconductor device and method of manufacturing the same After an isolation region is formed using a field-forming silicon nitride film, this silicon nitride film is patterned, thereby a gate trench is formed. Next, a gate electrode material is buried into the gate trench, and this is etched back. Thereafter, the silicon nitride is removed, thereby a contact hole ... 05/04/06 - 20060091453 - Trench mis device and method for manufacturing trench mis device A trench MIS device includes a drain region, a base region disposed on the drain region, the base region having a channel face, a source region disposed on the base region, the source region having a source end face, the source end face being continuous with the channel face, a ... 05/04/06 - 20060091452 - Self-aligned trench dmos transistor structure and its manufacturing methods A self-aligned trench DMOS transistor structure of the present invention comprises a self-aligned source structure and a self-aligned trench gate structure, in which the self-aligned source structure comprises a p-base diffusion region, a self-aligned n+ source diffusion ring, a self-aligned p+ contact diffusion region, and a self-aligned source contact window; ... 04/27/06 - 20060086972 - Semiconductor device and method of manufacturing same A semiconductor device comprises: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type provided on the first semiconductor region; a trench formed in the second semiconductor region; a thick gate insulating film selectively provided in a center area of a bottom ... 04/20/06 - 20060081921 - Integrated circuit device having non-linear active area pillars An integrated circuit device having non-linear active area pillars. More specifically, pillars are formed in a substrate such that sidewalls are exposed. The sidewalls of the pillars and the top surface of the pillars are covered with a gate oxide and a conductive layer to form a channel through the ... 04/20/06 - 20060081920 - Semiconductor device and method of manufacturing the same A semiconductor device includes: a semiconductor substrate of the first-type; a semiconductor region of the first-type formed on the substrate; a gate electrode a part of which is present within a trench selectively formed in part of the semiconductor region, and an extended top-end to have a wide width via ... 04/20/06 - 20060081919 - Semiconductor device A semiconductor device comprising: a first-conductivity-type base layer; a second-conductivity-type emitter layer formed on a first main surface of said first-conductivity-type base layer; a collector electrode formed in contact with a surface of said second-conductivity-type emitter layer; a second-conductivity-type base layer formed on a second main surface of said first-conductivity-type ... 04/20/06 - 20060081918 - Trench power moset and method for fabricating the same A method for fabricating a trench power MOSFET, comprising an epitaxial layer and a mask layer formed over a substrate, a trench formed in the epitaxial layer and the mask layer, a gate oxide layer formed on the trench, then the mask layer removed, a body well region formed in ... 04/13/06 - 20060076616 - High density memory array having increased channel widths A memory array having decreased cell sizes and having transistors with increased channel widths. More specifically, pillars are formed in a substrate such that sidewalls are exposed. The sidewalls of the pillars and the top surface of the pillars are covered with a gate oxide and a polysilicon layer to ... 04/13/06 - 20060076615 - Vertical field-effect transistor in source-down structure The invention relates to a vertical field-effect transistor in source-down structure, in which the active zones (10, 7, 11) are introduced from trenches (5, 8, 9) into a semiconductor body (1), a source electrode (18) being connected via the filling (6) of a body trench (5) to a highly doped ... 04/13/06 - 20060076614 - Semiconductor device A semiconductor device well balanced between high voltage applicability and low ON resistance, includes an n+-type semiconductor substrate; an n-type drift region formed thereon; a p-type base region formed on the n-type drift region; a plurality of p-type column regions in the n-type drift region so as to contact with ... 04/13/06 - 20060076613 - Semiconductor device A semiconductor device includes (a) a vertical field effect transistor, the vertical field effect transistor including a drain electrode formed on a first surface of a first conductivity type of a semiconductor, a pair of first trenches formed from a second surface of the semiconductor, control regions of a second ... 04/06/06 - 20060071268 - Shallow source mosfet A semiconductor device comprises a drain, a body in contact with the drain, the body having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a trench extending through the source and the body to the drain, and a ... 03/30/06 - 20060065926 - Insulated gate semiconductor device and manufacturing method of the same A capacity layer is formed of non-doped polysilicon. Unlike capacity layers formed of an oxide film, generation of seams and the like can be suppressed and thereby a stable capacity layer can be formed. Moreover, polysilicon used as a capacity layer may be doped polysilicon, and an oxide film formed ... 03/23/06 - 20060060917 - Semiconductor device and method of manufacturing semiconductor device An aspect of the present invention provides a method of manufacturing a semiconductor device, the method including a first process to form a second hetero-semiconductor layer on a principal surface of the semiconductor base, a second process to etch selectively the second hetero-semiconductor layer to form the second hetero-semiconductor region ... 03/23/06 - 20060060916 - Power devices having trench-based source and gate electrodes A power semiconductor device includes a plurality of trenches formed within a semiconductor body, each trench including one or more electrodes formed therein. In particular, according to embodiments of the invention, the plurality of trenches of a semiconductor device may include one or more gate electrodes, may include one or ... 03/16/06 - 20060054970 - Semiconductor device and method of manufacturing the same In an embodiment of the present invention, after trenches, a gate oxide film and gate electrodes are formed, a channel layer is formed by plural high-acceleration ion implantations where acceleration voltages are different with one another. The channel layer is an impurity implanted layer on which diffusion by a heat ... 03/09/06 - 20060049457 - Semiconductor device and method of fabricating the same A gate electrode <13> is provided to fill up a trench <300> while covering its opening. Assuming that WG represents the diameter (sectional width) of a head portion of the gate electrode <13> located upward beyond a P-type base layer <4> and an N+-type emitter diffusion layer <51>, WT represents ... 03/09/06 - 20060049456 - Insulated gate semiconductor device and method of manufacturing insulated gate semiconductor device Disclosed is an insulated gate semiconductor device comprising: a first region having a gate electrode region and a first insulating film region surrounding the gate electrode region; a semiconductor region which includes a channel forming region and is disposed to oppose the gate electrode region with the first insulating film ... 03/09/06 - 20060049455 - Semiconductor devices with local recess channel transistors and methods of manufacturing the same A method of manufacturing a local recess channel transistor in a semiconductor device. A hard mask layer is formed on a semiconductor substrate that exposes a portion of the substrate. The exposed portion of the substrate is etched using the hard mask layer as an etch mask to form a ... 03/09/06 - 20060049454 - Accufet with schottky source contact An accumulation mode FET (ACCUFET) having a source contact that makes Schottky contact with the base region thereof. ... 03/09/06 - 20060049453 - Vertical insulated gate transistor and manufacturing method A vertical insulated gate transistor is manufactured by providing a trench (26) extending through a source layer (8) and a channel layer (6) towards a drain layer (2). A spacer etch is used to form gate portions (20) along the trench side walls, a dielectric material (30) is filled into ... 03/02/06 - 20060043474 - Top drain mosgated device and process of manufacture therefor A trench type top drain MOSgated device has a drain electrode on the die top and a source electrode on the die bottom surface. The device is turned on by a control voltage connected between a drain and a gate region. The device cell has a body short trench and ... 03/02/06 - 20060043473 - Memory cell, array, device and system with overlapping buried digit line and active area and method for forming same A memory cell, array and device include an active area formed in the substrate with a vertical transistor including a first end disposed over a first portion of the active area. The vertical transistor is formed as an epitaxial post on the substrate surface, extends from the surface of the ... 03/02/06 - 20060043472 - High density access transistor having increased channel width and methods of fabricating such devices A memory device having decreased cell size and having transistors with increased channel widths. More specifically, pillars are formed in a substrate such that sidewalls are exposed. The sidewalls of the pillars and the top surface of the pillars are covered with a gate oxide and a polysilicon layer to ... 02/23/06 - 20060038223 - Trench mosfet having drain-drift region comprising stack of implanted regions A trench MOSFET is formed in a structure which includes a P-type epitaxial layer overlying an N+ substrate. A trench is formed in the epitaxial layer. A drain-drift region is formed by implanting N-type dopant through the bottom of the trench at different energies, creating a stack of N-type regions ... 02/09/06 - 20060027862 - Semiconductor device and a method of manufacturing the same A semiconductor device wherein an avalanche withstand of power MISFET is improved without enlarging cell pitch. In the semiconductor device, impurity ions having a p-type conduction, e.g. B ions, are introduced from a bottom of a contact hole to form a p-type semiconductive region that is provided below a p+-type ... 02/09/06 - 20060027861 - Semiconductor device and method for manufacturing the same A semiconductor device including a drain region of a first conductivity type formed on a semiconductor substrate; an element forming region that is provided on the drain region and that has a concave portion reaching the drain region; a gate electrode disposed in the concave portion; a superjunction structure portion ... 01/26/06 - 20060017099 - Mos transistor having a recessed gate electrode and fabrication method thereof A metal oxide semiconductor (MOS) transistor having a recessed gate electrode and a fabrication method thereof are provided. The MOS transistor includes a semiconductor substrate and an isolation layer formed in a predetermined region of the semiconductor substrate to define an active region. A channel trench region is disposed within ... 01/26/06 - 20060017098 - Semiconductor device with a high-k gate dielectric and a metal gate electrode A semiconductor device is described that comprises a gate dielectric and a metal gate electrode that comprises an aluminide. ... 01/26/06 - 20060017097 - Method of manufacturing a trench-gate semiconductor device A method of making a trench MOSFET includes forming a nitride liner 50 on the sidewalls 28 of a trench and a plug of doped polysilicon 26 at the bottom of a trench. The plug of polysilicon 26 may then be oxidised to form a thick oxide plug 30 at ... 01/19/06 - 20060011973 - Semiconductor device A semiconductor device includes a semiconductor substrate of a first conductivity type, a lightly-doped semiconductor layer of the first conductivity type formed on the first major surface of the substrate, a first semiconductor region of the first conductivity type formed on an island-shaped region on the lightly-doped semiconductor layer, a ... 01/12/06 - 20060006460 - Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge The cellular structure of the power device includes a substrate that has a highly doped drain region. Over the substrate there is a more lightly doped epitaxial layer of the same doping. Above the epitaxial layer is a well region formed of an opposite type doping. Covering the wells is ... 01/12/06 - 20060006459 - Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large, and automatically switches between them ... 01/12/06 - 20060006458 - Semiconductor device and method for manufacturing the same A semiconductor device comprises a semiconductor substrate. A plurality of first semiconductor regions are formed in a single crystal semiconductor layer of a first conduction type disposed on a surface of the semiconductor substrate as defined by a plurality of trenches provided in the single crystal semiconductor layer. A plurality ... 01/05/06 - 20060001085 - Lateral semiconductor device using trench structure and method of manufacturing the same A lateral trench MOS transistor is provided in which trenches extending to the source and drain regions are disposed parallel to the gate length direction, agate oxide is disposed on the trenches, a well is disposed under the trench region and the source and drain regions by using oblique ion ... 12/22/05 - 20050280079 - Trench fet with reduced mesa width and source contact inside active trench A trench FET has source contacts which contact the entire top surface of source regions, and contact a portion of side walls of the source regions. The side walls of the source regions form a portion of the side walls of the trenches in the trench FET. ... 12/22/05 - 20050280078 - Insulated gate semiconductor device An insulated gate semiconductor device, includes an isolating structure shaped in a circulating section along the periphery of a semiconductor substrate so as to isolate that part from an inside device region, a peripheral diffusion region of the semiconductor substrate located outside the isolating structure, a plurality of cell structures ... 12/22/05 - 20050280077 - Triple-diffused trench mosfet A trench-gated MOSFET includes adjacent mesas formed on opposite sides of a trench. A body region in the first mesa extends downward below the level of the trenches and laterally across the bottom of the trenches. The body region in the second mesa extends part of the way down the ... 12/15/05 - 20050275014 - Integration method of a semiconductor device having a recessed gate electrode Embodiments of the invention are directed to an integrated circuit device and a method for forming the device. In some embodiments of the invention, two types of transistors are formed on a single substrate, transistors: transistors having a recessed gate, and transistors having a planer gate electrode. In other embodiments, ... 12/15/05 - 20050275013 - Power semiconductor with functional element guide structure A trench transistor is described. In one aspect, the trench transistor has a cell array having a plurality of cell array trenches and a plurality of mesa zones arranged between the cell array trenches, and a semiconductor functional element formed in one of the mesa zones. A current flow guiding ... 12/08/05 - 20050269630 - Trench type semiconductor device with reduced qgd A trench type power semiconductor device which includes a buried electrode that is electrically connected to an electrode that can be biased to reach a voltage other than any of the other power electrodes. ... 12/01/05 - 20050263818 - Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type ... 11/24/05 - 20050258481 - Semiconductor device having a spacer layer doped with slower diffusing atoms than substrate A semiconductor device includes a silicon substrate heavily-doped with phosphorous. A spacer layer is disposed over the substrate and is doped with dopant atoms having a diffusion coefficient in the spacer layer material that is less than the diffusion coefficient of phosphorous in silicon. An epitaxial layer is also disposed ... 11/17/05 - 20050253190 - Semiconductor device A semiconductor device comprises a semiconductor substrate; a semiconductor layer provided on the surface of the semiconductor substrate; a base layer provided on the surface of the semiconductor layer; a source layer provided on the surface of the base layer; a trench formed to pass through the source layer, the ... 11/17/05 - 20050253189 - Silicon-oxide-nitride-oxide-silicon (sonos) memory devices having recessed channels and methods of fabricating the same Unit cells of silicon-oxide-nitride-oxide-silicon (SONOS) memory devices are provided. The unit cells include an integrated circuit substrate and a SONOS memory cell on the integrated circuit substrate. The SONOS memory cell includes a source region, a drain region and a gate contact. The integrated circuit substrate defines a trench between ... 11/17/05 - 20050253188 - Semiconductor memory device and method of manufacturing the same A semiconductor device includes a conductive film that is filled in a trench formed in a semiconductor substrate via a first insulating film. The conductive film has a first portion and a second portion with an upper surface higher than the first portion. A second insulating film provided on the ... 11/10/05 - 20050247974 - Semiconductor device A semiconductor device comprising a semiconductor substrate having first and second surfaces opposing each other, the substrate including a plurality of cells sharing a common drain region, each of the cells having source and gate regions, a surface source electrode connected to the source region of each of the cells ... 10/27/05 - 20050236665 - Trench mis device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same A trench MIS device is formed in a P-epitaxial layer that overlies an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the trench to the substrate. The thick insulating ... 10/27/05 - 20050236664 - Semiconductor device and method of manufacturing thereof On the surface of a silicon nitride film, there is formed a thermal oxide film, over which a CVD oxide film is then formed to provide a silicon oxide film of two-layered structure films. Moreover, the total thickness of the two-layered structure films is set to a value from 5 ... 10/27/05 - 20050236663 - Method of manufacturing a semiconductor device and semiconductor device obtainable with such a method A method of manufacturing a semiconductor device comprising a dual gate field effect transistor is disclosed, in which method a semiconductor body with a surface and of silicon is provided with a source region and a drain region of a first con |