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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Short Channel Insulated Gate Field Effect Transistor > Gate Controls Vertical Charge Flow Portion Of Channel (e.g., Vmos Device) Gate Controls Vertical Charge Flow Portion Of Channel (e.g., Vmos Device)Gate Controls Vertical Charge Flow Portion Of Channel (e.g., Vmos Device) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/27/07 - 20070296030 - Semiconductor integrated circuit device having deposited layer for gate insulation A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main surface of a semiconductor substrate; and a second field effect transistor having a gate insulating film formed over a second ... 12/27/07 - 20070296029 - Integratred circuit including a trench transistor having two control electrodes An integrated circuit including a field effect controllable trench transistor having two-control electrodes is disclosed. One embodiment provides a trench having a first control electrode and a second control electrode. A first electrical line is provided in an edge structure for electrically contact-connecting second control electrode. ... 11/01/07 - 20070252196 - Vertical channel transistors and memory devices including vertical channel transistors A semiconductor device is provided which includes an NMOS vertical channel transistor located on a substrate and including a p+ polysilicon gate electrode surrounding a vertical p-channel region, and a PMOS vertical channel transistor located on the substrate and including an n+ polysilicon gate electrode surrounding a vertical n-channel region. ... 11/01/07 - 20070252195 - Vertical and trench type insulated gate mos semiconductor device A vertical and trench type insulated gate MOS semiconductor device is provided in which the surfaces of p-type channel regions and the surfaces of portions of an n-type semiconductor substrate alternate in the longitudinal direction of the trench between the trenches arranged in parallel, and an n+-type emitter region selectively ... 09/27/07 - 20070221989 - Ultra-low drain-source resistance power mosfet Ultra-low drain-source resistance power MOSFET. In accordance with an embodiment of the preset invention, a semiconductor device comprises a plurality of trench power MOSFETs. The plurality of trench power MOSFETs is formed in a second epitaxial layer. The second epitaxial layer is formed adjacent and contiguous to a first epitaxial ... 09/13/07 - 20070210374 - Vertical-type surrounding gate semiconductor device A vertical-type surrounding gate semiconductor device is described. The semiconductor device comprises a pillar substrate, a collar oxide layer, a metal layer, a drain region, a ground line, a source region, a bit line, a word line, a gate and a gate dielectric layer. The ground line is formed in ... 08/23/07 - 20070194372 - Trench-gated mosfet including schottky diode therein Disclosed is a trench MOSFET, including: a trench gate structure having a gate electrode and a gate insulating film; an n-type diffusion layer formed to face the gate electrode via the gate insulating film at an upper portion of the trench; a p-type base layer formed to face the gate ... 06/28/07 - 20070145474 - Vertical-gate mos transistor for high voltage applications with differentiated oxide thickness A vertical-gate MOS transistor is integrated in a semiconductor chip of a first conductivity type having a main surface, and includes an insulated trench gate extending into the semiconductor chip from the main surface to a gate depth. The trench gate includes a control gate and an insulation layer for ... 06/14/07 - 20070132014 - Trench insulated gate field effect transistor The invention relates to a trench MOSPET with drain (8), sub-channel region (10) body (12) and source (14). The sub-channel region is doped to be the same conductivity type as the body (12), but of lower doping density. A field plate electrode (34) is provided adjacent to the sub-channel region ... 05/17/07 - 20070108513 - Method for fabricating a semiconductor component The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region ... 04/05/07 - 20070075359 - Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same In a circuit device including vertical transistors connected to buried bitlines and a method of manufacturing the circuit device, the circuit device includes a semiconductor substrate including a peripheral circuit region and left and right cell regions at both sides of the peripheral circuit region; bottom active regions arranged on ... 02/15/07 - 20070034942 - Power ldmos transistor A LDMOS transistor comprises a trench formed through the epitaxial layer at least to the top surface of the substrate, the trench having a bottom surface and a sidewall contacting the source region and the portion of the channel region extending under the source region. A first insulating layer is ... 01/25/07 - 20070018239 - Sea-of-fins structure on a semiconductor substrate and method of fabrication A semiconductor device and a method of fabricating a semiconductor device, wherein the method comprises forming, on a substrate, a plurality of planarized fin bodies to be used for customized fin field effect transistor (FinFET) device formation; forming a nitride spacer around each of the plurality of fin bodies; forming ... 01/18/07 - 20070012996 - Vertical channel semiconductor devices and methods of manufacturing the same Vertical channel semiconductor devices include a semiconductor substrate with a pillar having an upper surface. An insulated gate electrode is around a periphery of the pillar. The insulated gate electrode has an upper surface at a vertical level lower than the upper surface of the pillar to vertically space apart ... 11/23/06 - 20060261406 - Vertical integrated-gate cmos device and its fabrication process A vertical integrated-gate CMOS (Complementary Metal-Oxide-Silicon field effect transistor) device is invented for the first time and its possible fabrication processes are proposed. This CMOS architecture integrates PMOS (P-channel MOSFET) and NMOS (N-channel MOSFET) together vertically to increase the transistor density, and use epitaxy layer thickness to define the transistor ... 11/02/06 - 20060244054 - Semiconductor device A semiconductor device of this invention is a vertical power MOSFET having a plurality of first trenches where a trench gate is formed. It has a first column region of a second conductivity type placed beneath the first trenches and formed vertically in an epitaxial layer of a first conductivity ... 08/24/06 - 20060186465 - Dmos device having a trenched bus structure A DMOS device having a trench bus structure thereof is introduced. The trench bus structure comprises a field oxide layer formed on a P substrate, and a trench extending from an top surface of the field oxide layer down to a lower portion of the P substrate. A gate oxide ... 08/17/06 - 20060180854 - Multiple gate field effect transistor structure A multiple gate region FET device for forming up to 6 FET devices and method for forming the same, the device including a multiple fin shaped structure comprising a semiconductor material disposed on a substrate; said multiple fin shaped structure comprising substantially parallel spaced apart sidewall portions, each of said ... 08/03/06 - 20060170036 - Method of fabricating semiconductor device containing dielectrically isolated pn junction for enhanced breakdown characteristics A semiconductor device includes a field shield region that is doped opposite to the conductivity of the substrate and is bounded laterally by dielectric sidewall spacers and from below by a PN junction. For example, in a trench-gated MOSFET the field shield region may be located beneath the trench and ... 07/06/06 - 20060145246 - Integrated dram-nvram multi-level memory An integrated DRAM-NVRAM, multi-level memory cell is comprised of a vertical DRAM device with a shared vertical gate floating plate device. The floating plate device provides enhanced charge storage for the DRAM part of the cell through the shared floating body in a pillar between the two functions. The memory ... 06/22/06 - 20060131644 - Power semiconductor device A power semiconductor device includes second semiconductor layers of a first conductivity type and third semiconductor layers of a second conductivity type alternately disposed on a first semiconductor layer of the first conductivity type. The device further includes fourth semiconductor layers of the second conductivity type disposed in contact with ... 05/25/06 - 20060108635 - Trenched mosfets with part of the device formed on a (110) crystal plane This invention discloses an improved MOSFET devices manufactured with a trenched gate by forming part of the trench on a (110) crystal orientation of a semiconductor substrate. The trench is covering with a dielectric oxide layer along the sidewalls and the bottom surface or the termination of the trench formed ... 05/11/06 - 20060097313 - Semiconductor device and method of manufacturing same A semiconductor device comprises a semiconductor layer of a first conductivity type; a first semiconductor pillar layer of the first conductivity type provided on a major surface of the semiconductor layer; a second semiconductor pillar layer of a second conductivity type provided adjacent to the first semiconductor pillar layer; a ... 03/30/06 - 20060065925 - Vertical mosfet A vertical MOSFET includes a gate electrode formed inside a trench in a semiconductor layer, an interlayer insulating film formed above the semiconductor layer, a source electrode formed above the interlayer insulating film and electrically connected to a source region of the semiconductor layer through a conductive plug filled in ... 01/26/06 - 20060017096 - Semiconductor device A semiconductor device is disclosed, which comprises a terminal section formed to surround a device active region. The terminal section includes a trench formed in the semiconductor layer, and a filler filled in the trench. A field plate is extended to above the trench from an electrode of the semiconductor ... 01/05/06 - 20060001084 - Power semiconductor devices A vertical insulated gate field effect power transistor (3) has a plurality of parallel transistor cells (TC3) with a peripheral gate structure (G31, G2) at the boundary between each two transistor cells (TC3). The gate structure (G31, G32) comprises first (G31) and second (G32) gates isolated from each other so ... 11/24/05 - 20050258480 - Trench corner effect bidirectional flash memory cell A non-volatile memory cell structure that is capable of holding two data bits. The structure includes a trench in a substrate with two sides of the trench being lined with a trapping material. The trench is filled with an oxide dielectric material and a control gate is formed over the ... 09/08/05 - 20050194635 - Semiconductor component A semiconductor component (10) is proposed in which a control resistance element (NTC) is provided in electrical contact between a control region (G) for setting operating properties and a first input/output region (S), the control resistance element (NTC) having an operating temperature range in which the nonreactive resistance falls monotonically ... 08/18/05 - 20050179081 - Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same A semiconductor device and a method of fabrication thereof includes a bidirectional device having a high breakdown voltage and a decreased ON voltage. An n-type extended drain region is formed in the bottom surface of each trench. A p-type offset region is formed in each split semiconductor region. First and ... 08/11/05 - 20050173757 - Trench-gate semiconductor devices A trench-gate vertical power transistor in which the trench-gates (11) are parallel stripes which extend across the active area (100). Source regions (13) and ruggedness regions (15) extend to a source contact surface as alternating stripe areas having a width perpendicular to and fully between each two adjacent parallel stripe ... 08/04/05 - 20050167745 - Semiconductor device with element isolation region and method of fabricating the same A semiconductor device includes a semiconductor substrate having an upper face, a plurality of trenches formed in the semiconductor substrate, an element isolating film embedded in each trench and having a top located higher than the upper face of the semiconductor substrate, a gate insulating film formed on the semiconductor ... 08/04/05 - 20050167744 - Semiconductor device containing dielectrically isolated pn junction for enhanced breakdown characteristics A semiconductor device includes a field shield region that is doped opposite to the conductivity of the substrate and is bounded laterally by dielectric sidewall spacers and from below by a PN junction. For example, in a trench-gated MOSFET the field shield region may be located beneath the trench and ... 06/09/05 - 20050121717 - Semiconductor device A structure is provided that ensures a low on-resistance and a better blocking effect. In a lateral type SIT (Static Induction Transistor) in which a first region is used as a p+ gate and a gate electrode is formed on the bottom of the first region, the structure is built ... 06/02/05 - 20050116284 - Semiconductor devices A semiconductor device consists of a voltage-sustaining layer between a conductive contact layer and a conductive device feature layer, wherein said voltage-sustaining layer consists of at least one semiconductor region and at least one dielectric region with high permittivity, both said semiconductor regions and dielectric regions contact with the interface ... ### FreshPatents.com Support |