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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Short Channel Insulated Gate Field Effect Transistor > Vertical Channel Or Double Diffused Insulated Gate Field Effect Device Provided With Means To Protect Against Excess Voltage (e.g., Gate Protection Diode) Vertical Channel Or Double Diffused Insulated Gate Field Effect Device Provided With Means To Protect Against Excess Voltage (e.g., Gate Protection Diode)Vertical Channel Or Double Diffused Insulated Gate Field Effect Device Provided With Means To Protect Against Excess Voltage (e.g., Gate Protection Diode) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/10/08 - 20080006874 - Semiconductor component and method of manufacturing A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component ... 01/03/08 - 20080001214 - Semiconductor device A semiconductor device that suppresses partial discharging to a semiconductor substrate caused by local concentration of current. The semiconductor device includes a semiconductor substrate, a gate electrode buried in the semiconductor substrate, a conductor buried in the semiconductor substrate further inward from the gate electrode, a wiring layer formed in ... 12/13/07 - 20070284657 - Semiconductor device having trench-type gate and its manufacturing method capable of simplifying manufacturing steps In a semiconductor device, a gate silicon dioxide layer is formed within a trench of a semiconductor wafer. A first gate electrode is formed on a sidewall of the trench of the semiconductor wafer via the gate silicon dioxide layer. An insulating layer is formed on a bottom of the ... 11/15/07 - 20070262375 - Non-planar transistor and techniques for fabricating the same A non-planar transistor and methods for fabricating the same. In certain embodiments, the transistor includes an active gate and a passive gate. The active gate may be switchably coupled to a first voltage that is configured to turn on the transistor, and the passive gate may be fixedly coupled to ... 10/18/07 - 20070241393 - Low inductance bond-wireless co-package for high power density devices, especially for igbts and diodes A power semiconductor package that includes at least two semiconductor devices electrically coupled to one another through a common metallic web. ... 08/16/07 - 20070187750 - Superjunction power semiconductor device A superjunction power semiconductor device which includes spaced drift regions each extending from the bottom of a respective gate trench to the substrate of the device. ... 08/02/07 - 20070176230 - High-breakdown-voltage insulated gate semiconductor device In a semiconductor device of the present invention, the top surface of an n-type silicon carbide layer formed on a silicon carbide substrate is miscut from the (0001) plane in the <11-20> direction. A gate electrode, a source electrode and other elements are arranged such that in a channel region, ... 08/02/07 - 20070176229 - Integrated circuit having compensation component An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is ... 07/26/07 - 20070170497 - Semiconductor device and method for manufacturing the same A semiconductor device comprises an active region formed in a semiconductor substrate; a recess region being formed within the active region and defining a protruding portion; and a gate structure formed within the recess region. ... 06/28/07 - 20070145473 - Semiconductor device and electronic control unit using the same A semiconductor device with enhanced heat releasability and low-cost manufacturability is disclosed. This device has a substrate with an electronic circuit disposed on a first principal surface, a semiconductor element which is provided at the first surface of the substrate and electrically connected by wire bonding to the electronic circuit, ... 06/21/07 - 20070138543 - Semiconductor device A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type and a second semiconductor pillar region of a second conductivity type provided on the major surface; a first semiconductor region of the second conductivity type provided on the ... 06/21/07 - 20070138542 - Vertical semiconductor device A vertical semiconductor device includes a vertical, active region including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a third semiconductor layer of the first conductivity type, a trench extending through the third semiconductor layer at least into the ... 06/14/07 - 20070132013 - High-voltage vertical transistor with a multi-gradient drain doping profile A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being separated from the mesa by a dielectric layer. ... 05/31/07 - 20070120181 - Power igbt with increased robustness A power IGBT includes a semiconductor body having an emitter zone of a first conduction type and a drift zone of a second conduction type proximate to the emitter zone. The IGBT further includes a cell array, each transistor cell of the array having a source zone, a body zone ... 05/17/07 - 20070108512 - Power semiconductor component with charge compensation structure and method for the fabrication thereof The invention relates to a power semiconductor component (1) with charge compensation structure (3) and a method for the fabrication thereof. For this purpose, the power semiconductor component (1) has a semiconductor body (4) having a drift path (5) between two electrodes (6, 7). The drift path (5) has drift ... 05/17/07 - 20070108511 - Semiconductor structure, method for operating a semiconductor structure and method for producing a semiconductor structure A semiconductor structure has a substrate with a first main surface and a second main surface, the substrate comprising a gate electrode region, a channel region, wherein a conductive channel can be generated, and a gate electrode insulation between the gate electrode region and the channel region. Further, a field ... 04/19/07 - 20070085135 - Semiconductor device A vertical-type semiconductor device for controlling a current flowing between electrodes opposed against each other across a semiconductor substrate, including: a semiconductor substrate having first and second surfaces opposed against each other; a first electrode formed in the first surface; a second electrode formed in the second surface through a ... 04/12/07 - 20070080395 - Lateral soi component having a reduced on resistance An SOI semiconductor component comprises a semiconductor substrate having a basic doping, a dielectric layer arranged on the semiconductor substrate, and a semiconductor layer arranged on the dielectric layer. The semiconductor layer includes a drift zone of a first conduction type, a junction between the drift zone and a further ... 03/08/07 - 20070052012 - Vertical tunneling nano-wire transistor A vertical nano-wire transistor is formed on a substrate out of a vertical pillar having active regions of opposing conductivity in opposite ends of the pillar. In one embodiment, the source region is a p+ region in the substrate under the pillar and the drain region is an n+ region ... 03/01/07 - 20070045721 - Ultra-thin body vertical tunneling transistor A vertical tunneling, ultra-thin body transistor is formed on a substrate out of a vertical oxide pillar having active regions of opposing conductivity on opposite ends of the pillar. In one embodiment, the source region is a p+ region in the substrate under the pillar and the drain region is ... 02/22/07 - 20070040212 - Asymmetric hetero-doped high-voltage mosfet (ah2mos) An asymmetric heterodoped metal oxide (AH2MOS) semiconductor device includes a substrate and an insulated gate on the top of the substrate disposed between a source region and a drain region. On one side of the gate, heterodoped tub and source regions are formed. The tub region has dopants of a ... 02/15/07 - 20070034941 - Deep n diffusion for trench igbt An increased conductivity deep diffusion of the same conductivity type as that of the drift region is provided between adjacent trenches of a trench type IGBT and below the trenches to reduce the on resistance components of the drift region resistance and spreading resistance to current flow when the device ... 01/18/07 - 20070012995 - Three-dimensional high voltage transistor and method for manufacturing the same A method for manufacturing a three-dimensional high voltage transistor is disclosed. According to the method, lengths and widths of channels are increased while the reducing transistor forming area on plane, and semiconductor devices are completely separated from each other while restraining parasitic capacitance, latch-up phenomena, and formation of field transistors. ... 12/14/06 - 20060278921 - Vertical mosfet transistor, in particular operating as a selector in nonvolatile memory devices A vertical MOSFET transistor is formed in a body of semiconductor material having a surface. The transistor includes a buried conductive region of a first conductivity type; a channel region of a second conductivity type, arranged on top of the buried conductive region; a surface conductive region of the first ... 11/30/06 - 20060267083 - Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and forming a voltage sustaining region on the substrate. The voltage sustaiing region is formed in the following manner. First, an epitaxial layer is deposited on the substrate. ... 11/30/06 - 20060267082 - Semiconductor memory component A semiconductor memory component comprises at least one memory cell. The memory cell comprises a semiconductor body comprised of a body region, a drain region and a source region, a gate dielectric, and a gate electrode. The body region comprises a first conductivity type and a depression between the source ... 11/23/06 - 20060261405 - Vertical device 4f² eeprom memory EEPROM memory devices and arrays are described that facilitate the use of vertical floating gate memory cells and select gates in NOR or NAND high density memory architectures. Memory embodiments of the present invention utilize vertical select gates and floating gate memory cells to form NOR and NAND architecture memory ... 11/16/06 - 20060255401 - Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures This invention relates to an apparatus and method for achieving high breakdown voltage and low on-resistance in semiconductor devices that have top, intermediate and bottom regions with a controllable current path traversing any of these regions. The device has an insulating trench that is coextensive with the top and intermediate ... 11/09/06 - 20060249786 - Alignment of trench for mos Manufacturing a power transistor by forming a gate structure on a first layer, forming a trench in the first layer, self aligned with the gate structure, and forming part of the transistor in the trench. By forming a spacer next to the gate, the spacer and gate can be used ... 11/09/06 - 20060249785 - Power mosfet device structure for high frequency applications This invention discloses a new switching device supported on a semiconductor that includes a drain disposed on a first surface and a source region disposed near a second surface of said semiconductor opposite the first surface. The switching device further includes an insulated gate electrode disposed on top of the ... 11/02/06 - 20060244053 - Trench gate type semiconductor device A semiconductor device includes: a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a fourth semiconductor layer in a part of the third semiconductor layer; a trench penetrating the fourth semiconductor layer and the third semiconductor layer ... 09/28/06 - 20060214222 - Power semiconductor devices and methods of manufacture Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance ... 09/28/06 - 20060214221 - Power semiconductor devices and methods of manufacture Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance ... 09/07/06 - 20060197146 - Semiconductor device A semiconductor device comprises a semiconductor substrate having an upper surface and a lower surface. A semiconductor layer is formed on the upper surface of the semiconductor substrate. A base region of a first conduction type is formed in the semiconductor layer. A source region of a second conduction type ... 07/27/06 - 20060163648 - Semiconductor component A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, ... 06/29/06 - 20060138532 - Semiconductor device and manufacturing method of the same In a semiconductor device having a package structure in which lead terminals connected to electrodes on both of the upper and lower surfaces of a semiconductor chip are exposed from both of the upper and lower surfaces and side surfaces of a sealing body formed of resin, electrodes of the ... 06/22/06 - 20060131643 - Semiconductor device and method of manufacturing the semiconductor device A semiconductor device includes a pair of first source/drain regions disposed on a silicon substrate. A first silicon epitaxial layer pattern defines a gate forming region that exposes the silicon substrate between the pair of first source/drain regions. A first gate insulation layer is disposed on the silicon substrate in ... 06/15/06 - 20060124994 - Vertical double-diffused metal oxide semiconductor (vdmos) device incorporating reverse diode The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the drain region is a first diffusion structure in which a heavily ... 06/15/06 - 20060124993 - Sidewall semiconductor transistors A novel transistor structure and method for fabricating the same. The transistor structure comprises (a) a substrate and (b) a semiconductor region, a gate dielectric region, and a gate region on the substrate, wherein the gate dielectric region is sandwiched between the semiconductor region and the gate region, wherein the ... 06/08/06 - 20060118860 - Semiconductor device In the upper surface of a p− substrate, an n-type impurity region is formed. In the upper surface of the n-type impurity region, a p-well is formed. Also in the upper surface of the n-type impurity region, a p+-type source region and a p+-type drain region are formed. In the ... 06/01/06 - 20060113587 - Transistor array for semiconductor memory devices and method for fabricating a vertical channel transistor array A transistor array for semiconductor memory devices is provided. A plurality of semiconductor pillars extending outwardly from a bulk section of a semiconductor substrate is arranged in rows and columns. Each pillar forms an active area of a vertical channel access transistor. Insulating trenches are formed between the rows of ... 05/25/06 - 20060108634 - Semiconductor apparatus and method for manufacturing the same A semiconductor apparatus comprises a gate electrode, a gate insulating layer, a drift region of a first conductivity type formed over a semiconductor substrate of the first conductivity type, a base region of a second conductivity type formed over the drift region, a source region of the first conductivity type ... 05/11/06 - 20060097312 - Method for producing a vertical transistor component Providing a semiconductor substrate (200), applying an auxiliary layer (210) to the semiconductor substrate (200), patterning the auxiliary layer (210) for the purpose of producing at least one trench (214) which extends as far as the semiconductor substrate (200), producing a monocrystalline semiconductor zone (230) in the at least one ... 03/30/06 - 20060065924 - Semiconductor device containing dielectrically isolated pn junction for enhanced breakdown characteristics A semiconductor device includes a field shield region that is doped opposite to the conductivity of the substrate and is bounded laterally by dielectric sidewall spacers and from below by a PN junction. For example, in a trench-gated MOSFET the field shield region may be located beneath the trench and ... 03/30/06 - 20060065923 - High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure A high-voltage-resistant semiconductor component (1) has vertically conductive semiconductor areas (17) and a trench structure (5). These vertically conductive semiconductor areas are formed from semiconductor body areas (10) of a first conductivity type and are surrounded by a trench structure (5) on the upper face (6) of the semiconductor component. ... 03/09/06 - 20060049452 - Novel ldmos ic technology with low threshold voltage A lateral double diffused metal oxide semiconductor (LDMOS) device includes forming a plurality of wells on a semiconductor substrate. The plurality of wells include a first well of a first type, a second well of a second type opposite to the first type, and a third well of the first ... 03/02/06 - 20060043471 - Vertical transistor structures having vertical-surrounding-gates with self-aligned features The present inventions include a vertical transistor formed by defining a channel length of the vertical-surrounding-gate field effect transistor with self-aligning features. The method provides process steps to define the transistor channel length and recess silicon pillars used to form the vertical-surrounding gate field effect transistor structure for use in ... 02/16/06 - 20060033153 - Semiconductor device with improved breakdown voltage and high current capacity The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged alternately. The device also includes a peripheral section around the drain drift section, which includes a second alternating conductivity type layer formed of ... 02/02/06 - 20060022263 - Selective substrate thinning for power mosgated devices A vertical conduction semiconductor die has a top surface which receives a semiconductor junction pattern and a top electrode and a bottom surface with a bottom electrode. The bottom surface has one or more reduced thickness areas therein formed by selective etching or laser abrasion or the like to reduce ... 02/02/06 - 20060022262 - Semiconductor device having a fin structure and method of manufacturing the same A semiconductor device may include a fin structure having source/drain regions and channel fins connected between source/drain patterns. A gate insulation layer may be provided on the channel fins. A gate electrode may include lower gate patterns and an upper gate pattern. The lower gate patterns may extend in a ... 12/01/05 - 20050263817 - Transistor comprising fill areas in the source drain and/or drain region A transistor contains a source region and a drain region. Two or more fill areas are formed such that the fill areas and the source and/or drain region engage in one another. The fill areas have vertical dimensions which are at least of equal size to the vertical dimensions of ... 11/24/05 - 20050258479 - Trench mosfet Disclosed is a trench MOSFET, including: a trench gate structure having a gate electrode and a gate insulating film; an n-type diffusion layer formed to face the gate electrode via the gate insulating film at an upper portion of the trench; a p-type base layer formed to face the gate ... 11/24/05 - 20050258478 - Semiconductor device In a semiconductor layer of the first conductivity type, a first diffusion region of the second conductivity type is formed which includes a low resistance layer and a high resistance layer. This semiconductor layer of the first conductivity type has its thickness that is less than or equal to the ... 11/17/05 - 20050253187 - Semiconductor device The present invention is a semiconductor device which includes: a semiconductor substrate; a BOX film disposed on top of the semiconductor substrate; an active layer disposed on top of the BOX film; a base region disposed proximate to a surface of the active layer; a first main electrode region disposed ... 11/03/05 - 20050242392 - Super trench mosfet including buried source electrode and method of fabricating the same In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the ... 10/13/05 - 20050224868 - Mos-gated device having a buried gate and process for forming same An improved trench MOS-gated device comprises a monocrystalline semiconductor substrate on which is disposed a doped upper layer. The upper layer includes at an upper surface a plurality of heavily doped body regions having a first polarity and overlying a drain region. The upper layer further includes at its upper ... 09/15/05 - 20050199950 - Tri-gate devices and methods of fabrication The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode ... 09/15/05 - 20050199949 - Tri-gate devices and methods of fabrication The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode ... 08/25/05 - 20050184336 - Semiconductor device and method of manufacturing the semiconductor device An active region in a semiconductor device is made up of a parallel p-n layer including a first p-semiconductor layer and a first n-semiconductor with the widths and total amounts of impurities being equal to each other to provide a structure in which charges are balanced. A section parallel to ... 08/04/05 - 20050167743 - Vertical device 4f2 eeprom memory EEPROM memory devices and arrays are described that facilitate the use of vertical floating gate memory cells and select gates in NOR or NAND high density memory architectures. Memory embodiments of the present invention utilize vertical select gates and floating gate memory cells to form NOR and NAND architecture memory ... 08/04/05 - 20050167742 - Power semiconductor devices and methods of manufacture Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance ... 08/04/05 - 20050167741 - Encapsulated spacers in vertical pass gate dram and damascene logic gates Semiconductor devices having improved isolation are provided along with methods of fabricating such semiconductor devices. The improved isolation includes an encapsulated spacer formed within a gate region of a device. ... 08/04/05 - 20050167740 - Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage Vertical field effect transistors having a channel region defined by at least one semiconducting nanotube and methods for fabricating such vertical field effect transistors by chemical vapor deposition using a spacer-defined channel. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad positioned at the base of ... 07/28/05 - 20050161733 - Bidirectional high voltage switching device and energy recovery circuit having the same Provided are a bi-directional high voltage switching device that includes an N-channel double diffused metal oxide semiconductor field effect transistor (DMOS FET) and a P-channel DMOS FET, each conducting current bi-directionally, and an energy recovery circuit that reduces the amount of energy consumed when charging or discharging a load capacitor ... 07/21/05 - 20050156231 - Semiconductor device A semiconductor device includes: a drift layer of a first conductivity type; a collector layer of a second conductivity type located on the drift layer; a collector electrode located on the collector layer; a base layer of the second conductivity type located in a region isolated from the collector layer ... 07/07/05 - 20050145933 - Semiconductor device A semiconductor device includes an active region, an alternating conductivity type layer, and an insulation region surrounding the alternating conductivity type layer provided in a periphery section as a voltage withstanding section. The insulation region is made of an insulator with the critical electric field strength higher than that of ... 07/07/05 - 20050145932 - Vertical channel field effect transistors having insulating layers thereon and methods of fabricating the same A field effect transistor can include a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The transistor can ... 06/23/05 - 20050133859 - Semiconductor device and design-aiding program A semiconductor device is fabricated to include a withstand-voltage assurance layer designed into a multi-dimensional super junction structure and a group of trench gate electrodes, each of which penetrating a body layer in contact with the multi-dimensional super junction structure to reach the multi-dimensional super junction structure, so that dispersions ... ### FreshPatents.com Support |