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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Field Effect Device > Having Insulated Electrode (e.g., Mosfet, Mos Diode) > Short Channel Insulated Gate Field Effect Transistor

Short Channel Insulated Gate Field Effect Transistor

Short Channel Insulated Gate Field Effect Transistor patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

07/31/14 - 20140209997 - Thin film transistor
A thin film transistor based on carbon nanotubes includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The semiconductor layer is electrically connected with the source electrode and the drain electrode. The...

07/24/14 - 20140203348 - Semiconductor devices and methods of fabricating the same
Provided is a semiconductor device, which includes a gate electrode crossing over a semiconductor fin disposed on a substrate, a gate dielectric layer disposed between the gate electrode and the semiconductor fin, a channel region having a three dimensional structure defined in the semiconductor fin under the gate electrode, impurity...

06/12/14 - 20140159139 - Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drain
A transistor includes a substrate, a gate over the substrate, a source and a drain over the substrate on opposite sides of the gate, a first silicide on the source, and a second silicide on the drain. Only one of the drain or the source has an unsilicided region adjacent...

05/15/14 - 20140131790 - Field effect transistor devices with dopant free channels and back gates
A method of forming a back gate transistor device includes forming an open isolation trench in a substrate; forming sidewall spacers in the open isolation trench; and using the open isolation trench to perform a doping operation so as to define a doped well region below a bottom surface of...

05/01/14 - 20140117435 - Integrating transistors with different poly-silicon heights on the same die
A method of fabricating an integrated circuit including a first region and a second region each having different poly-silicon gate structures is provided. The method includes depositing a first poly-silicon layer over the first and the second region and depositing, within the second region, an oxide layer over the first...

04/10/14 - 20140097487 - Plasma doping a non-planar semiconductor device
In plasma doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. The substrate having the non-planar semiconductor body may be placed into a chamber. A plasma may be formed in the chamber and the plasma may contain dopant ions. A first bias voltage...

03/27/14 - 20140084359 - Semiconductor device and method for manufacturing the same
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of a first conductivity type, a first electrode, and a contact region. The second semiconductor region is provided on the...

03/20/14 - 20140077286 - Field-effect transistor
According to one embodiment, a field-effect transistor is provided with a first conductivity-type first semiconductor layer, a source layer formed of a second conductivity-type semiconductor, a drain layer formed of a second conductivity-type semiconductor, and a gate electrode. The source layer is located on the first semiconductor layer. The drain...

02/13/14 - 20140042521 - Mosfet with recessed channel film and abrupt junctions
MOSFETs and methods for making MOSFETs with a recessed channel and abrupt junctions are disclosed. The method includes creating source and drain extensions while a dummy gate is in place. The source/drain extensions create a diffuse junction with the silicon substrate. The method continues by removing the dummy gate and...

12/26/13 - 20130341704 - Variable gate width for gate all-around transistors
Nanowire-based gate all-around transistor devices having one or more active nanowires and one or more inactive nanowires are described herein. Methods to fabricate such devices are also described. One or more embodiments of the present invention are directed at approaches for varying the gate width of a transistor structure comprising...

12/05/13 - 20130320427 - Gated circuit structure with self-aligned tunneling region
A tunnel field-effect transistor is provided, which includes a fin-shaped, source-drain circuit structure with a source region and a drain region. The circuit structure is angled in cross-sectional elevation, and includes a first portion and a second portion. The first portion extends away from the second portion, and the source...

12/05/13 - 20130320428 - Electronic device including a gate electrode and a gate tap
An electronic device can include a gate electrode and a gate tap that makes an unlanded contact to the gate electrode. The electronic device can further include a source region and a drain region that may include a drift region. In an embodiment, the gate electrode has a height that...

09/19/13 - 20130240979 - Gate structures
A semiconductor device is provided. The device includes a semiconductor substrate, first and second projections extending upwardly from the substrate, the projections having respective first and second channel regions therein, and a first gate structure engaging the first projection adjacent the first channel region. The first gate structure includes a...

06/06/13 - 20130140625 - Field-effect transistor and method of making
The present invention belongs to the field of microelectronic device technologies. Specifically, an asymmetric source/drain field-effect transistor and its methods of making are disclosed. A structure of the field-effect transistor comprises: a semiconductor substrate, a gate structure, and a source region and a drain region having a mixed junction and...

02/07/13 - 20130032876 - Replacement gate etsoi with sharp junction
A transistor structure includes a channel disposed between a source and a drain; a gate conductor disposed over the channel and between the source and the drain; and a gate dielectric layer disposed between the gate conductor and the source, the drain and the channel. In the transistor structure a...

12/20/12 - 20120319188 - Electronic device including a gate electrode and a gate tap and a process of forming the same
An electronic device can include a gate electrode and a gate tap that makes an unlanded contact to the gate electrode. The electronic device can further include a source region and a drain region that may include a drift region. In an embodiment, the gate electrode has a height that...

12/06/12 - 20120306002 - Accumulation type finfet, circuits and fabrication method thereof
This description relates to a fin field-effect-transistor (FinFET) including a substrate and a fin structure on the substrate. The fin structure includes a channel between a source and a drain, wherein the source, the drain, and the channel have a first type dopant, and the channel comprises at least one...

11/15/12 - 20120286350 - Tunnel field effect transistor
An FET device characterized as being an asymmetrical tunnel FET (TFET) is disclosed. The TFET includes a gate-stack, a channel region underneath the gate-stack, a first and a second junction adjoining the gate-stack and being capable for electrical continuity with the channel. The first junction and the second junction are...

08/30/12 - 20120217574 - Semiconductor device and fabrication method thereof
A semiconductor device includes a semiconductor substrate having an active layer in which an element region and a contact region are formed, a support substrate supporting the active layer, and a buried insulation layer interposed between the active layer and the support substrate. A transistor clement is formed in the...

06/07/12 - 20120139033 - Semiconductor device and method of manufacturing the same
Semiconductors devices and methods of making semiconductor devices are provided. According to one embodiment, a semiconductor device can include a p-type field effect transistor area having an active region with an epitaxial layer grown thereupon and an isolation feature adjacent to the active region. A height of the isolation feature...

05/17/12 - 20120119284 - Semiconductor structures and methods of manufacture
Semiconductor structures and methods of manufacture semiconductors are provided which relate to transistors. The method of forming a transistor includes thermally annealing a selectively patterned dopant material formed on a high-k dielectric material to form a high charge density dielectric layer from the high-k dielectric material. The high charge density...

05/03/12 - 20120104486 - Transistor and method for forming the same
The present invention relates to a transistor and the method for forming the same. The transistor of the present invention comprises a semiconductor substrate; a gate dielectric layer formed on the semiconductor substrate; a gate formed on the gate dielectric layer; and a source region and a drain region located...

04/12/12 - 20120086071 - Stress memorization process improvement for improved technology performance
Semiconductor substrate with a deformed gate region and a method for the fabrication thereof. The semiconductor substrate has improved device performance compared to devices without a deformed gate region and decreased dopant loss compared to devices with deformed source/drain regions....

01/12/12 - 20120007168 - Semiconductor device capable of suppressing short channel effect
A semiconductor device includes a semiconductor substrate including at least one memory channel region and at least one memory source/drain region, the memory channel region and the memory source/drain region being arranged alternately, and at least one word line on the memory channel region, wherein the memory source/drain region has...

01/05/12 - 20120001254 - Transistor with embedded si/ge material having reduced offset and superior uniformity
In sophisticated semiconductor devices, a strain-inducing embedded semiconductor alloy may be provided on the basis of a crystallographically anisotropic etch process and a self-limiting deposition process, wherein transistors which may not require an embedded strain-inducing semiconductor alloy may remain non-masked, thereby providing superior uniformity with respect to overall transistor configuration....

11/03/11 - 20110266613 - Semiconductor component and method of manufacture
A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one...

10/20/11 - 20110254080 - Tunnel field effect transistor
A method for fabricating an FET device characterized as being a tunnel FET (TFET) device is disclosed. The method includes processing a gate-stack, and processing the adjoining source and drain junctions, which are of a first conductivity type. A hardmask is formed covering the gate-stack and the junctions. A tilted...

09/22/11 - 20110227144 - High-performance semiconductor device and method of manufacturing the same
The present invention relates to a method of manufacturing a semiconductor device, and the method uses the mode of thermal annealing the source/drain regions and performing Halo ion implantation to form a Halo ion-implanted region by: first removing the dummy gate to expose the gate dielectric layer to form an...

09/01/11 - 20110210388 - Integrated native device without a halo implanted channel region and method for its fabrication
According to one embodiment, a semiconductor structure including an integrated native device without a halo implanted channel region comprises an arrangement of semiconductor devices formed over a common substrate, the arrangement includes native devices disposed substantially perpendicular to non-native devices, wherein each of the native and non-native devices includes a...

08/25/11 - 20110204434 - Semiconductor device and method of fabricating the same
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes, a gate structure having a gate dielectric layer, a gate electrode, and a spacer, which are each formed on a substrate, a first impurity area formed in a portion of the substrate located below...

06/30/11 - 20110156133 - Semiconductor nanostructures, semiconductor devices, and methods of making same
A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the...

06/23/11 - 20110147828 - Semiconductor device having doped epitaxial region and its methods of fabrication
Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial...

05/12/11 - 20110108908 - Multilayered box in fdsoi mosfets
A fully depleted MOSFET has a semiconductor-on-insulator substrate that includes a substrate material, a BOX positioned on the substrate material, and an active layer positioned on the BOX. The BOX includes a first layer of material with a first dielectric constant and a first thickness and a second layer of...

03/17/11 - 20110062512 - Nonplanar device with thinned lower body portion and method of fabrication
A nonplanar semiconductor device having a semiconductor body formed on an insulating layer of a substrate. The semiconductor body has a top surface opposite a bottom surface formed on the insulating layer and a pair of laterally opposite sidewalls wherein the distance between the laterally opposite sidewalls at the top...

03/10/11 - 20110057253 - Semiconductor device and method of manufacturing same
A semiconductor device includes a first transistor including a first source/drain region and a first sidewall spacer, and a second transistor including a second source/drain region and a second sidewall spacer, the first sidewall spacer has a first width and the second sidewall spacer has a second width wider than...

03/03/11 - 20110049613 - Accumulation type finfet, circuits and fabrication method thereof
A FinFET includes a substrate and a fin structure on the substrate. The fin structure includes a channel between a source and a drain, wherein the source, the drain, and the channel have the first type dopant. The channel includes a Ge, SiGe, or III-V semiconductor. A gate dielectric layer...

01/13/11 - 20110006359 - Semiconductor structures and methods of manufacture
Semiconductor structures and methods of manufacture semiconductors are provided which relate to transistors. The method of forming a transistor includes thermally annealing a selectively patterned dopant material formed on a high-k dielectric material to form a high charge density dielectric layer from the high-k dielectric material. The high charge density...

01/06/11 - 20110001185 - Device
A semiconductor device includes a first diffusion region and a second diffusion region in an active region surrounded by an isolation insulation region, a recessed trench region formed between the first diffusion region and the second diffusion region, a gate insulation film formed on the trench region, a gate electrode...

12/23/10 - 20100320529 - Integrated circuit system with high voltage transistor and method of manufacture thereof
A method of manufacture of an integrated circuit system includes: providing a semiconductor substrate having an active region, implanted with impurities of a first type at a first concentration; forming an isolation region around the active region; forming a parasitic transistor by applying a gate electrode, implanted with impurities of...

08/19/10 - 20100207196 - Semiconductor device having internal gate structure and method for manufacturing the same
A semiconductor device includes a main gate formed on a semiconductor substrate and a source region and a drain region formed in a surface of the semiconductor substrate on opposite sides of the main gate. An internal gate formed within a portion of the main gate that adjoins the source...

08/05/10 - 20100193860 - Short channel transistor with reduced length variation by using amorphous electrode material during implantation
In sophisticated transistor elements, enhanced profile uniformity along the transistor width direction may be accomplished by using a gate material in an amorphous state, thereby reducing channeling effects and line edge roughness. In sophisticated high-k metal gate approaches, an appropriate sequence may be applied to avoid a change of the...

07/08/10 - 20100171170 - Semiconductor device having reduced sub-threshold leakage
A semiconductor device fabricated in the semiconductor substrate includes a FinFET transistor having opposed source and drain pillars, and a fin interposed between the source and drain pillars. A cavity is formed in the semiconductor substrate extending at least partially between the fin and the semiconductor substrate. The cavity may...

07/01/10 - 20100163970 - Trigate transistor having extended metal gate electrode
A trigate device having an extended metal gate electrode comprises a semiconductor body having a top surface and opposing sidewalls formed on a substrate, an isolation layer formed on the substrate and around the semiconductor body, wherein a portion of the semiconductor body remains exposed above the isolation layer, and...

07/01/10 - 20100163971 - Dielectric punch-through stoppers for forming finfets having dual fin heights
A semiconductor structure includes a semiconductor substrate having a first portion and a second portion. A first Fin field-effect transistor (FinFET) is formed over the first portion of the semiconductor substrate, wherein the first FinFET includes a first fin having a first fin height. A second FinFET is formed over...

06/24/10 - 20100155827 - Semiconductor device having a multi-channel type mos transistor
In a method of manufacturing a semiconductor device, an active channel pattern is formed on a substrate. The active channel pattern includes preliminary gate patterns and single crystalline silicon patterns that are alternately stacked with each other. A source/drain layer is formed on a sidewall of the active channel pattern....

06/17/10 - 20100148243 - Semiconductor device and method for fabricating the same
A semiconductor device comprises an active region including a first active area to be a source/drain and a second active area to be a gate, and a device isolation region defining the active region. The first active area is obtained by growing a semiconductor substrate located between the gates as...

05/27/10 - 20100127321 - Semiconductor and manufacturing method for the same
A semiconductor device and a manufacturing method for the same are disclosed. The semiconductor device includes a gate pattern formed at an upper part of the semiconductor substrate to overlap one side of a drift region, and a shallow oxide region disposed adjacent to the gate pattern, having a shallower...

05/13/10 - 20100117142 - Semiconductor device for improving the peak induced voltage in switching converter
A power semiconductor device includes a backside metal layer, a substrate formed on the backside metal layer, a semiconductor layer formed on the substrate, and a frontside metal layer. The semiconductor layer includes a first trench structure including a gate oxide layer formed around a first trench with poly-Si implant,...

04/22/10 - 20100096690 - Semiconductor device with increased channel area
A semiconductor device includes an active region defining at least four surfaces, the four surfaces including first, second, third, and fourth surfaces, a gate insulation layer formed around the four surfaces of the active region, and a gate electrode formed around the gate insulation layer and the four surfaces of...

02/25/10 - 20100044780 - Transistor with gain variation compensation
A semiconductor device and method of making comprises providing an active device region and an isolation region, the isolation region forming a boundary with the active device region. A patterned gate material overlies the active device region between first and second portions of the boundary. The patterned gate material defines...

02/25/10 - 20100044781 - Semiconductor device
To suppress short channel effects and obtain a high driving current by means of a semiconductor device having an MISFET wherein a material having high mobility and high dielectric constant, such as germanium, is used for a channel. A p-type well is formed on a surface of a p-type silicon...

02/25/10 - 20100044782 - Integrated circuit having long and short channel metal gate devices and method of manufacture
Embodiments of an integrated circuit are provided. In one embodiment, the integrated circuit includes a substrate, a short channel (SC) device, and a long channel (LC) device. The short channel device includes an SC gate insulator overlying a first portion of the substrate, an SC metal gate overlying the SC...